JPS5718327A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5718327A JPS5718327A JP9450380A JP9450380A JPS5718327A JP S5718327 A JPS5718327 A JP S5718327A JP 9450380 A JP9450380 A JP 9450380A JP 9450380 A JP9450380 A JP 9450380A JP S5718327 A JPS5718327 A JP S5718327A
- Authority
- JP
- Japan
- Prior art keywords
- nitride film
- film
- semiconductor substrate
- etching
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 150000004767 nitrides Chemical class 0.000 abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000005530 etching Methods 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000011347 resin Substances 0.000 abstract 2
- 229920005989 resin Polymers 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9450380A JPS5718327A (en) | 1980-07-09 | 1980-07-09 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9450380A JPS5718327A (en) | 1980-07-09 | 1980-07-09 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5718327A true JPS5718327A (en) | 1982-01-30 |
Family
ID=14112109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9450380A Pending JPS5718327A (en) | 1980-07-09 | 1980-07-09 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5718327A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104131A (ja) * | 1982-11-18 | 1984-06-15 | テキサス・インスツルメンツ・インコ−ポレイテツド | 半導体装置の製造方法 |
JPS59136935A (ja) * | 1983-01-27 | 1984-08-06 | Nec Corp | 半導体装置の製造方法 |
JP2012189515A (ja) * | 2011-03-11 | 2012-10-04 | Seiko Epson Corp | 傾斜構造体及び分光センサーの製造方法 |
-
1980
- 1980-07-09 JP JP9450380A patent/JPS5718327A/ja active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59104131A (ja) * | 1982-11-18 | 1984-06-15 | テキサス・インスツルメンツ・インコ−ポレイテツド | 半導体装置の製造方法 |
JPS59136935A (ja) * | 1983-01-27 | 1984-08-06 | Nec Corp | 半導体装置の製造方法 |
JPH0148652B2 (ja) * | 1983-01-27 | 1989-10-20 | Nippon Electric Co | |
JP2012189515A (ja) * | 2011-03-11 | 2012-10-04 | Seiko Epson Corp | 傾斜構造体及び分光センサーの製造方法 |
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