JPS5477570A - Production of semiconductor element - Google Patents
Production of semiconductor elementInfo
- Publication number
- JPS5477570A JPS5477570A JP14526377A JP14526377A JPS5477570A JP S5477570 A JPS5477570 A JP S5477570A JP 14526377 A JP14526377 A JP 14526377A JP 14526377 A JP14526377 A JP 14526377A JP S5477570 A JPS5477570 A JP S5477570A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thick
- sio
- electrodes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01072—Hafnium [Hf]
Abstract
PURPOSE: To decrease MOS capacity by burying a SiO2 thick film right under bonding pads.
CONSTITUTION: After the regions intended for bonding pads of a substrate 1 are selectively etched, the surface is covered with a thermal oxidized thin film 2 and a SiO2 thick film 3 is made by a vapor phase growth method. Next, only the film 3 is etched a way and the film 2 is left and at the same time the film 3' is selectively left through a mask by performing etching with a mixed solution of NH4F and HF. Following to this, a base 4 and emitter 5 are provided on the substrate 1 surface and electrodes 6 are led out so that pads 7 are positioned on the buried layers 3'. Hence, the MOS capacity is considerably reduced by the thick buried oxide films 3'. In addition, the surface is flat and therefore the adhesion of the photo mask is good, finer emitter windows may be formed and step cutting of electrodes does not occur.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14526377A JPS5477570A (en) | 1977-12-02 | 1977-12-02 | Production of semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14526377A JPS5477570A (en) | 1977-12-02 | 1977-12-02 | Production of semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5477570A true JPS5477570A (en) | 1979-06-21 |
Family
ID=15381075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14526377A Pending JPS5477570A (en) | 1977-12-02 | 1977-12-02 | Production of semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5477570A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961946A (en) * | 1982-09-30 | 1984-04-09 | Fujitsu Ltd | Semiconductor device |
-
1977
- 1977-12-02 JP JP14526377A patent/JPS5477570A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961946A (en) * | 1982-09-30 | 1984-04-09 | Fujitsu Ltd | Semiconductor device |
JPH0586656B2 (en) * | 1982-09-30 | 1993-12-13 | Fujitsu Ltd |
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