JPS56164530A - Formation of contacting hole of semiconductor device - Google Patents

Formation of contacting hole of semiconductor device

Info

Publication number
JPS56164530A
JPS56164530A JP6864180A JP6864180A JPS56164530A JP S56164530 A JPS56164530 A JP S56164530A JP 6864180 A JP6864180 A JP 6864180A JP 6864180 A JP6864180 A JP 6864180A JP S56164530 A JPS56164530 A JP S56164530A
Authority
JP
Japan
Prior art keywords
film
hole
etching
semiconductor device
5mum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6864180A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP6864180A priority Critical patent/JPS56164530A/en
Publication of JPS56164530A publication Critical patent/JPS56164530A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To eliminate the recess of a contacting hole due to sidewise etching by forming insulating films of a plurality of different etching speeds on a substrate when forming the contacting hole in a semiconductor device, and gradually reducing the etching area of the insulating films. CONSTITUTION:A thermally oxidized film 13, a PSG film 14 and a CVD oxidized film 15 are laminated on a semiconductor substrate 11, the first photoresist film 16 having a hole corresponding to an element region is covered thereon, and the exposed part of the film 15 is first removed with hydrofluoric acid-base etchant. Then, the film 16 is removed, the second photoresist film 17 is newly formed in such a manner to be reduced in the hole approx. 5mum smaller than the film 16, and the surface of the film 14 is covered at the end of the hole. When the films 14, 13 are thereafter etched with similar etchant, the etching speed of the film 14 is faster. Even if side etching according occurs remarkably, the film 15 is etched widely approx. 5mum. Thus, the sidewise etching does not exert to the lower part of the film 15. Accordingly, it can obtain a hole of conical shape, and can avoid the disconnection of the electrode.
JP6864180A 1980-05-22 1980-05-22 Formation of contacting hole of semiconductor device Pending JPS56164530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6864180A JPS56164530A (en) 1980-05-22 1980-05-22 Formation of contacting hole of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6864180A JPS56164530A (en) 1980-05-22 1980-05-22 Formation of contacting hole of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56164530A true JPS56164530A (en) 1981-12-17

Family

ID=13379547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6864180A Pending JPS56164530A (en) 1980-05-22 1980-05-22 Formation of contacting hole of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56164530A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60755A (en) * 1983-06-16 1985-01-05 Pioneer Electronic Corp Formation of through hole
JPS6362353A (en) * 1986-09-03 1988-03-18 Matsushita Electronics Corp Manufacture of semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263676A (en) * 1975-11-20 1977-05-26 Toshiba Corp Production of semiconductor device
JPS5432068A (en) * 1977-08-17 1979-03-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS55130130A (en) * 1979-03-30 1980-10-08 Origin Electric Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5263676A (en) * 1975-11-20 1977-05-26 Toshiba Corp Production of semiconductor device
JPS5432068A (en) * 1977-08-17 1979-03-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS55130130A (en) * 1979-03-30 1980-10-08 Origin Electric Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60755A (en) * 1983-06-16 1985-01-05 Pioneer Electronic Corp Formation of through hole
JPS6362353A (en) * 1986-09-03 1988-03-18 Matsushita Electronics Corp Manufacture of semiconductor device

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