JPS5732653A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5732653A
JPS5732653A JP10734380A JP10734380A JPS5732653A JP S5732653 A JPS5732653 A JP S5732653A JP 10734380 A JP10734380 A JP 10734380A JP 10734380 A JP10734380 A JP 10734380A JP S5732653 A JPS5732653 A JP S5732653A
Authority
JP
Japan
Prior art keywords
photoresists
layer
contact hole
shaped
contracted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10734380A
Other languages
Japanese (ja)
Inventor
Masataka Shinguu
Makoto Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10734380A priority Critical patent/JPS5732653A/en
Publication of JPS5732653A publication Critical patent/JPS5732653A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To facilitate positioning, and to improve the degree of integration by a method wherein a photoresist pattern used for forming a lower layer wiring layer is contracted, and insulating layer shaped on the pattern is removed and a contact hole is molded. CONSTITUTION:A metallic layer in Al, etc. formed on an Si substrate 1 through an SiO2 layer 16 is etched by employing the photoresists 13, 14' and the wiring layers 2, 3, 4 are shaped, the photoresists are developed additionally and the width is contracted, the whole surface is coated with the SiO2 film 18, the photoresists are removed, the SiO2 film on the photoresists is removed, the contact hole is shaped and an upper layer wiring layer is formed on the contact hole. Accordingly, the degree of integration is improved because the contact hole can easily be positioned and formed accurately.
JP10734380A 1980-08-05 1980-08-05 Manufacture of semiconductor device Pending JPS5732653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10734380A JPS5732653A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10734380A JPS5732653A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5732653A true JPS5732653A (en) 1982-02-22

Family

ID=14456639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10734380A Pending JPS5732653A (en) 1980-08-05 1980-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5732653A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63234533A (en) * 1987-03-24 1988-09-29 Agency Of Ind Science & Technol Formation of josephson junction element
JPH01206046A (en) * 1988-02-12 1989-08-18 Dainippon Printing Co Ltd Forming device for uneven pattern on platelike substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63234533A (en) * 1987-03-24 1988-09-29 Agency Of Ind Science & Technol Formation of josephson junction element
JPH01206046A (en) * 1988-02-12 1989-08-18 Dainippon Printing Co Ltd Forming device for uneven pattern on platelike substrate
JPH0515548B2 (en) * 1988-02-12 1993-03-01 Dainippon Printing Co Ltd

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