JPS5731156A - Wiring pattern formation of integrated circuit device - Google Patents

Wiring pattern formation of integrated circuit device

Info

Publication number
JPS5731156A
JPS5731156A JP10596680A JP10596680A JPS5731156A JP S5731156 A JPS5731156 A JP S5731156A JP 10596680 A JP10596680 A JP 10596680A JP 10596680 A JP10596680 A JP 10596680A JP S5731156 A JPS5731156 A JP S5731156A
Authority
JP
Japan
Prior art keywords
layer
wiring
wiring pattern
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10596680A
Other languages
Japanese (ja)
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10596680A priority Critical patent/JPS5731156A/en
Publication of JPS5731156A publication Critical patent/JPS5731156A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a wiring pattern having no disconnection without thinning the thickness of a wiring layer, by selectively oxidizing a poly-crystalline layer. CONSTITUTION:An Si3N4 mask 6 is provided on a doped poly Si layer 5 formed by connecting the layer 5 to the diffusion layer of an Si substrate for thermal oxidization, and SiO27 is selectively made. At that time, level difference will not exist on the surface. A metallic wiring layer 9 is provided through an interlayer insulating film 8. By said constitution, as no level difference of single layer wiring exists, the metallic wiring on the upper layer will not be disconnected even if cross wiring is done.
JP10596680A 1980-08-01 1980-08-01 Wiring pattern formation of integrated circuit device Pending JPS5731156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10596680A JPS5731156A (en) 1980-08-01 1980-08-01 Wiring pattern formation of integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10596680A JPS5731156A (en) 1980-08-01 1980-08-01 Wiring pattern formation of integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5731156A true JPS5731156A (en) 1982-02-19

Family

ID=14421521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10596680A Pending JPS5731156A (en) 1980-08-01 1980-08-01 Wiring pattern formation of integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5731156A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076797A (en) * 1983-10-03 1985-05-01 ヤマハ株式会社 Automatic musical sound generator
JPS6259994A (en) * 1985-09-10 1987-03-16 カシオ計算機株式会社 Overdabbing unit for electronic musical apparatus
JPS62161197A (en) * 1986-11-29 1987-07-17 カシオ計算機株式会社 Electronic musical apparatus
US5160798A (en) * 1984-08-09 1992-11-03 Casio Computer Co., Ltd. Tone information processing device for an electronic musical instrument for generating sound having timbre corresponding to two parameters
US5319151A (en) * 1988-12-29 1994-06-07 Casio Computer Co., Ltd. Data processing apparatus outputting waveform data in a certain interval
US5584034A (en) * 1990-06-29 1996-12-10 Casio Computer Co., Ltd. Apparatus for executing respective portions of a process by main and sub CPUS
US5691493A (en) * 1990-06-29 1997-11-25 Casio Computer Co., Ltd. Multi-channel tone generation apparatus with multiple CPU's executing programs in parallel

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076797A (en) * 1983-10-03 1985-05-01 ヤマハ株式会社 Automatic musical sound generator
US5847302A (en) * 1984-08-09 1998-12-08 Casio Computer Co., Ltd. Tone information processing device for an electronic musical instrument for generating sounds
US5160798A (en) * 1984-08-09 1992-11-03 Casio Computer Co., Ltd. Tone information processing device for an electronic musical instrument for generating sound having timbre corresponding to two parameters
US5475390A (en) * 1984-08-09 1995-12-12 Casio Computer Co., Ltd. Tone information processing device for an electronic musical instrument
US5521322A (en) * 1984-08-09 1996-05-28 Casio Computer Co., Ltd. Tone information processing device for an electronic musical instrument for generating sounds
JPS6259994A (en) * 1985-09-10 1987-03-16 カシオ計算機株式会社 Overdabbing unit for electronic musical apparatus
JPS6339917B2 (en) * 1985-09-10 1988-08-08 Casio Computer Co Ltd
JPS62161197A (en) * 1986-11-29 1987-07-17 カシオ計算機株式会社 Electronic musical apparatus
JPH0115878B2 (en) * 1986-11-29 1989-03-20 Casio Computer Co Ltd
US5319151A (en) * 1988-12-29 1994-06-07 Casio Computer Co., Ltd. Data processing apparatus outputting waveform data in a certain interval
US5726371A (en) * 1988-12-29 1998-03-10 Casio Computer Co., Ltd. Data processing apparatus outputting waveform data for sound signals with precise timings
US5691493A (en) * 1990-06-29 1997-11-25 Casio Computer Co., Ltd. Multi-channel tone generation apparatus with multiple CPU's executing programs in parallel
US5584034A (en) * 1990-06-29 1996-12-10 Casio Computer Co., Ltd. Apparatus for executing respective portions of a process by main and sub CPUS

Similar Documents

Publication Publication Date Title
JPS5240969A (en) Process for production of semiconductor device
JPS5731156A (en) Wiring pattern formation of integrated circuit device
JPS56146246A (en) Manufacture of semiconductor integrated circuit
JPS5731155A (en) Manufacture of semiconductor device
JPS5715442A (en) Production of semiconductor device
JPS6430228A (en) Manufacture of semiconductor device
JPS559415A (en) Semiconductor manufacturing method
JPS5482185A (en) Manufacture of semiconductor device
JPS5718327A (en) Production of semiconductor device
JPS5797643A (en) Manufacture of semiconductor device
JPS6468949A (en) Manufacture of semiconductor device
JPS5643744A (en) Manufacture of semiconductor device
JPS5671976A (en) Preparation method of mos type semiconductor system
JPS5271994A (en) Semiconductor integrated circuit device
JPS53116787A (en) Production of semiconductor device
JPS556811A (en) Method of producing semiconductor device
JPS57136347A (en) Semiconductor device
JPS5512775A (en) Manufacturing method of semiconductor
JPS5723224A (en) Manufacture of semiconductor integrated circuit
JPS5754346A (en) Formation of polycrystalline silicon wiring layer
JPS5667938A (en) Semiconductor system
JPS57181141A (en) Semiconductor device
JPS5486287A (en) Integrated-circuit device
JPS5637666A (en) Semiconductor integrated circuit
JPS57134951A (en) Forming method of flat wiring layer