JPS55102235A - Formation of interlayer conductive layer - Google Patents
Formation of interlayer conductive layerInfo
- Publication number
- JPS55102235A JPS55102235A JP952979A JP952979A JPS55102235A JP S55102235 A JPS55102235 A JP S55102235A JP 952979 A JP952979 A JP 952979A JP 952979 A JP952979 A JP 952979A JP S55102235 A JPS55102235 A JP S55102235A
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- layer
- mask
- sio
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE: To obtain a good interlayer conductive layer by using Si3N4 film for the etching stopper and mask when etching SiO2 film.
CONSTITUTION: The conductive layer 2, etching stopper 21 and SiO2 layer 3 are laminated on the substrate 1, the Si3N4 mask 25 is provided on the uppermost face. Since Si3N4 and SiO2 are tightly sticked to each other, the mask 25 is not peeled off although the layer 3 is thick. Thus, when the hole 6 to be reached the stopper 21 is successively etched, the hole of the desired shape and size can be formed with a high precision. Also, since the Si3N4 stopper 21 has a good SiO2-etchant-resistance, the condutive layer 2 is not exposed. Next, when the mask 25 and film 21 of the hole bottm are removed and the conductive layer 7, 8 is evaporated onto the remained face and selectively removed, the upper conductive layer B2, hole H, connecting conductor G and lower conductive layer B1 are formed, the layer 3 becomes an interlayer insulating layer.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP952979A JPS55102235A (en) | 1979-01-29 | 1979-01-29 | Formation of interlayer conductive layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP952979A JPS55102235A (en) | 1979-01-29 | 1979-01-29 | Formation of interlayer conductive layer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55102235A true JPS55102235A (en) | 1980-08-05 |
Family
ID=11722790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP952979A Pending JPS55102235A (en) | 1979-01-29 | 1979-01-29 | Formation of interlayer conductive layer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55102235A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745260A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5893260A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
JPS5961049A (en) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01120340U (en) * | 1988-02-05 | 1989-08-15 | ||
JPH0212917A (en) * | 1988-04-22 | 1990-01-17 | Philips Gloeilampenfab:Nv | Method of forming electrical internal connection of semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5329673A (en) * | 1976-08-31 | 1978-03-20 | Toshiba Corp | Production of semiconductor device |
-
1979
- 1979-01-29 JP JP952979A patent/JPS55102235A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5329673A (en) * | 1976-08-31 | 1978-03-20 | Toshiba Corp | Production of semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5745260A (en) * | 1980-08-29 | 1982-03-15 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS5893260A (en) * | 1981-11-30 | 1983-06-02 | Toshiba Corp | Manufacture of semiconductor device |
JPS5961049A (en) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH01120340U (en) * | 1988-02-05 | 1989-08-15 | ||
JPH0212917A (en) * | 1988-04-22 | 1990-01-17 | Philips Gloeilampenfab:Nv | Method of forming electrical internal connection of semiconductor device |
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