WO2025120767A1 - セラミックサセプタ - Google Patents

セラミックサセプタ Download PDF

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Publication number
WO2025120767A1
WO2025120767A1 PCT/JP2023/043646 JP2023043646W WO2025120767A1 WO 2025120767 A1 WO2025120767 A1 WO 2025120767A1 JP 2023043646 W JP2023043646 W JP 2023043646W WO 2025120767 A1 WO2025120767 A1 WO 2025120767A1
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WO
WIPO (PCT)
Prior art keywords
ceramic plate
ceramic
thermocouple
heater circuit
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/JP2023/043646
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English (en)
French (fr)
Japanese (ja)
Inventor
尚輝 吉武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
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NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2024556215A priority Critical patent/JP7812936B2/ja
Priority to PCT/JP2023/043646 priority patent/WO2025120767A1/ja
Priority to TW113134798A priority patent/TW202538958A/zh
Priority to US18/905,235 priority patent/US20250193971A1/en
Publication of WO2025120767A1 publication Critical patent/WO2025120767A1/ja
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Definitions

  • This disclosure relates to ceramic susceptors.
  • Ceramic heaters are used as support stages to uniformly control the temperature of wafers.
  • a widely used ceramic heater of this type comprises a ceramic plate on which the wafer is placed and a cylindrical ceramic shaft attached to the ceramic plate.
  • Ceramic plates generally have a configuration in which internal electrodes such as heater electrodes, RF electrodes, and electrostatic chuck (ESC) electrodes are embedded inside a ceramic base made of aluminum nitride (AlN) or the like, which has excellent heat and corrosion resistance.
  • AlN aluminum nitride
  • Ceramic heaters that are known include those that have a thermocouple insertion path for inserting a thermocouple to control the peripheral temperature.
  • Patent Document 1 JP Patent Publication No. 71813164 discloses a ceramic heater that includes a disk-shaped ceramic plate having a wafer mounting surface, an outer peripheral resistance heating element built into the ceramic plate and arranged to fold back at multiple folds in an annular outer peripheral zone, and an outer peripheral thermocouple that measures the temperature of the outer peripheral zone with a temperature measuring part at the tip. When the ceramic plate is viewed from the wafer mounting surface, this temperature measuring part is located in a position excluding the part of the outer peripheral zone where the folds of the outer peripheral resistance heating element face each other.
  • a thermocouple path is provided inside the ceramic plate parallel to the wafer mounting surface. This thermocouple path is configured to run from an insertion port that opens into the center of the ceramic plate on the side opposite the wafer mounting surface to a terminal position just before the outer peripheral surface of the ceramic plate.
  • Patent Document 2 JP Patent Publication 2021-174586A discloses a ceramic heater including a disk-shaped ceramic base having a wafer mounting surface, a resistance heating element embedded in the ceramic base, a cylindrical shaft supporting the ceramic base from the underside of the ceramic base, a thermocouple passage, and a thermocouple insertion hole communicating with the thermocouple passage.
  • the thermocouple passage is provided between the resistance heating element and the wafer mounting surface, and is provided so as to extend from a starting position on the center side inside the ceramic base to a terminal position on the outer periphery side.
  • the thermocouple passage is provided so as to open into an inner shaft region surrounded by the cylindrical shaft on the underside of the ceramic base, and to communicate with the thermocouple passage.
  • thermocouple insertion path when attempting to enhance the functionality of a ceramic heater having a thermocouple insertion path by further incorporating internal electrodes such as ESC electrodes or RF electrodes, the presence of the thermocouple insertion path or the thermocouple inserted therein can have an undesirable effect on the adsorption performance or plasma characteristics provided by the ESC electrodes or RF electrodes. As a result, the ceramic heater may not be able to maximize its desired performance.
  • thermocouple insertion groove at a depth between the internal electrode and the first heater circuit in the thickness direction of the ceramic plate, it is possible to reduce the effect on adsorption performance or plasma characteristics.
  • the object of the present invention is therefore to provide a ceramic susceptor that incorporates not only a heater circuit and a thermocouple insertion path, but also internal electrodes such as ESC electrodes and RF electrodes, while minimizing the effect on adsorption performance or plasma characteristics.
  • a circular ceramic plate assembly including an upper ceramic plate and a lower ceramic plate joined to each other at their joining surfaces, the upper ceramic plate having a first surface opposite to the joining surface thereof and the lower ceramic plate having a second surface opposite to the joining surface thereof; at least one internal electrode selected from the group consisting of an RF electrode and an ESC electrode, embedded in the upper ceramic plate parallel to the first surface; a first heater circuit embedded in the lower ceramic plate parallel to the first surface; a thermocouple insertion groove provided on the joining surface side of the upper ceramic plate or the lower ceramic plate, the thermocouple insertion groove forming a thermocouple insertion path together with the joining surface; whereby the thermocouple insertion groove is disposed at a depth position between the internal electrode and the first heater circuit in a thickness direction of the ceramic plate assembly.
  • the ceramic susceptor of claim 1 further comprising a second heater circuit embedded in the upper ceramic plate parallel to the first surface, whereby the thermocouple insertion groove is positioned at a depth position between the first heater circuit and the second heater circuit in the thickness direction of the ceramic plate assembly.
  • the thermocouple insertion groove is positioned at a depth position between the first heater circuit and the second heater circuit in the thickness direction of the ceramic plate assembly.
  • the second heater circuit is provided at a depth farther from the first surface than the internal electrode.
  • the ceramic plate assembly includes, when viewed from above, an inner zone defined as a circular region within a predetermined distance from a center of the ceramic plate assembly, and an outer zone defined as an annular region outside the inner zone, 4.
  • a ceramic susceptor as described in claim 4 further comprising: a jumper embedded in the inner zone of the lower ceramic plate and connected to the first heater circuit; and a power supply rod having one end connected to the jumper and the other end extending from the second surface to an outside of the ceramic plate assembly, the first heater circuit being capable of being supplied with power via the jumper.
  • a thermocouple insertion hole formed as a vertical hole extending from the inner zone of the second surface through the lower ceramic plate to the upper ceramic plate.
  • thermocouple insertion hole reaches a depth position closer to the first surface than the second heater circuit.
  • thermocouple insertion hole reaches a depth position closer to the first surface than the second heater circuit.
  • FIG. 1 is a schematic cross-sectional view showing an example of a ceramic susceptor according to the present invention.
  • FIG. 2 is a schematic cross-sectional view showing another example of a ceramic susceptor according to the present invention.
  • FIG. 3 is a schematic plan view of the ceramic susceptor shown in FIG. 2 as viewed from the ceramic shaft side.
  • the ceramic susceptor according to the present invention is a ceramic platform for supporting a wafer, used in a film forming apparatus or an etching apparatus, particularly a film forming apparatus or an etching apparatus for a semiconductor manufacturing process.
  • the ceramic susceptor according to the present invention may be a ceramic heater for a semiconductor film forming apparatus, or an electrostatic chuck for a semiconductor etching apparatus.
  • it may be an electrostatic chuck heater that combines a heater function and an electrostatic chuck function.
  • film forming apparatus include CVD (chemical vapor deposition) apparatus (e.g., thermal CVD apparatus, plasma CVD apparatus, photo CVD apparatus, and MOCVD apparatus) and PVD (physical vapor deposition) apparatus.
  • FIG. 1 shows an example of a ceramic susceptor.
  • the ceramic susceptor 10 shown in FIG. 1 includes a ceramic plate assembly 12, an internal electrode 14, a first heater circuit 16, and a thermocouple insertion groove 18.
  • the ceramic plate assembly 12 is disk-shaped and includes an upper ceramic plate 12a and a lower ceramic plate 12b joined to each other at a joining surface 12c.
  • the ceramic plate assembly 12 has a first surface 12d opposite to the joining surface 12c of the upper ceramic plate 12a and a second surface 12e opposite to the joining surface 12c of the lower ceramic plate 12b.
  • the internal electrode 14 is at least one type selected from the group consisting of RF electrodes and ESC electrodes, and is embedded in the upper ceramic plate 12a parallel to the first surface 12d.
  • the first heater circuit 16 is embedded in the lower ceramic plate 12b parallel to the first surface 12d.
  • the thermocouple insertion groove 18 is provided on the joining surface 12c side of the upper ceramic plate 12a or the lower ceramic plate 12b, and constitutes a thermocouple insertion path together with the joining surface 12c.
  • the thermocouple insertion groove 18 is disposed at a depth position between the internal electrode 14 and the first heater circuit 16 in the thickness direction of the ceramic plate assembly 12.
  • thermocouple insertion path when a ceramic heater having a thermocouple insertion path is further equipped with internal electrodes such as an ESC electrode or an RF electrode to enhance its functionality, the presence of the thermocouple insertion path or the thermocouple inserted therein may have an undesirable effect on the adsorption performance or plasma characteristics provided by the ESC electrode or the RF electrode. As a result, the ceramic heater may not be able to maximize its desired performance.
  • This problem is successfully solved by the configuration of the present invention. That is, by arranging the thermocouple insertion groove 18 at a depth position between the internal electrode 14 and the first heater circuit 16 in the thickness direction of the ceramic plate assembly 12, a configuration is achieved in which there are no other components (such as the first heater circuit 16, the second heater circuit 26 described later with reference to FIG.
  • thermocouple insertion groove 18, the first thermocouple 24, etc. that may become obstacles between the first surface 12d of the ceramic plate assembly 12 and the internal electrode 14. Therefore, the adsorption performance provided by the ESC electrode and/or the plasma characteristics provided by the RF electrode can be maximized without being affected by such other components.
  • the above arrangement can ensure a long separation distance between the internal electrode 14 and the first heater circuit 16, thereby reducing the leakage current that may flow from the internal electrode 14 to the first heater circuit 16 due to the potential difference between the internal electrode 14 and the first heater circuit 16. In other words, if the separation distance between the internal electrode 14 and the first heater circuit 16 is long, the resistance increases accordingly, and therefore the leakage current that may flow between them can be reduced.
  • thermocouple insertion groove 18 is disposed at a depth position closer to the first surface 12d than the first heater circuit 16, thereby reducing the discrepancy between the temperature of the first surface 12d and the temperature read by the first thermocouple 24 in the thermocouple insertion groove 18.
  • the ceramic plate assembly 12 includes an upper ceramic plate 12a and a lower ceramic plate 12b joined to each other at a joining surface 12c.
  • the upper ceramic plate 12a and the lower ceramic plate 12b may be made of materials having the same physical properties, or may be made of materials having different physical properties (e.g., volume resistance and thermal expansion coefficient). In the latter case, for example, the volume resistance of the upper ceramic plate 12a may be relatively higher than the volume resistance of the lower ceramic plate 12b, or the volume resistance of the lower ceramic plate 12b may be relatively higher than the volume resistance of the upper ceramic plate 12a.
  • the upper ceramic plate 12a and the lower ceramic plate 12b are not particularly limited except for the arrangement of the first heater circuit 16, the second heater circuit 26 described later, the thermocouple insertion groove 18, and the thermocouple insertion hole described later, and may have the same configuration as a ceramic plate used in a known ceramic susceptor or ceramic heater. Therefore, from the viewpoints of excellent thermal conductivity, high electrical insulation, and thermal expansion characteristics similar to those of silicon, the upper ceramic plate 12a and the lower ceramic plate 12b preferably contain aluminum nitride or aluminum oxide, and more preferably contain aluminum nitride.
  • the internal electrode 14 is an electrode embedded in the upper ceramic plate 12a parallel to the first surface, and includes at least one selected from the group consisting of an RF electrode and an ESC electrode.
  • the RF electrode enables film formation by a plasma CVD process when a high frequency is applied to it.
  • the ESC electrode is an abbreviation for an electrostatic chuck (ESC) electrode, and is also called an electrostatic electrode.
  • the ESC electrode is preferably a circular thin-layer electrode with a diameter slightly smaller than that of the ceramic plate assembly 12, and may be, for example, a mesh-like electrode formed by weaving thin metal wires into a net shape into a sheet shape.
  • the ESC electrode may be used as a plasma electrode.
  • the ESC electrode can also be used as an RF electrode, and film formation can also be performed by a plasma CVD process.
  • a terminal rod 20 is connected to the internal electrode 14, and the terminal rod 20 is connected to an external power source (not shown).
  • the internal electrode 14 is an ESC electrode
  • the ESC electrode chucks the wafer placed on the surface of the ceramic plate assembly 12 by the Johnsen-Rahbek force when a voltage is applied by an external power source.
  • the first heater circuit 16 is embedded in the lower ceramic plate 12b parallel to the first surface 12d.
  • the first heater circuit 16 is not limited to a coil, but may be, for example, a conductive coil wired in a single stroke across the entire surface or a predetermined area of the lower ceramic plate 12b (typically, the outer zone Z2 described later with reference to FIG. 2).
  • Power supply rods 22 are connected to both ends of the first heater circuit 16 for power supply, and the power supply rods 22 are connected to a heater power supply (not shown).
  • the first heater circuit 16 When power is supplied from the heater power supply, the first heater circuit 16 generates heat and heats the wafer placed on the surface of the first surface 12d.
  • the first heater circuit 16 is not limited to a coil, and may be, for example, a ribbon (a long, thin plate), a mesh, or a print.
  • the thermocouple insertion groove 18 is a groove that constitutes a thermocouple insertion path together with the joint surface 12c, and is provided on the joint surface 12c side of the upper ceramic plate 12a or the lower ceramic plate 12b.
  • the presence of the thermocouple insertion groove 18 or the thermocouple insertion path allows a first thermocouple 24 to be inserted or accommodated therein, and the temperature at a predetermined position of the ceramic plate assembly 12 or the internal electrode 14 (typically an outer peripheral portion such as the outer zone Z2 described later with reference to FIG. 2) can be measured.
  • the thermocouple insertion groove 18 is preferably provided in the upper ceramic plate 12a as shown in FIG. 1, but may also be provided in the lower ceramic plate 12b.
  • thermocouple insertion groove 18 is preferably arranged in a straight line from the thermocouple insertion opening 18a, which is a vertical hole formed in the second surface 12e, to the thermocouple insertion path end 18b.
  • the thermocouple insertion path end 18b is preferably a closed end for accurate temperature measurement.
  • this ceramic susceptor 10' shows a ceramic susceptor 10' according to a preferred embodiment of the present invention.
  • this ceramic susceptor 10' further includes a second heater circuit 26.
  • the second heater circuit 26 is embedded in the upper ceramic plate 12a parallel to the first surface 12d, so that the thermocouple insertion groove 18 is located at a depth position between the first heater circuit 16 and the second heater circuit 26 in the thickness direction of the ceramic plate assembly 12.
  • the second heater circuit 26 is provided at a depth position farther from the first surface 12d than the internal electrode 14.
  • the second heater circuit 26 is also not particularly limited, and may be, for example, a conductive coil wired in a single line across a predetermined area of the upper ceramic plate 12a (preferably the inner zone Z1 described below). Power supply rods 30 are connected to both ends of the second heater circuit 26 for power supply, and the power supply rods 30 are connected to a heater power source (not shown).
  • the second heater circuit 26 When power is supplied from the heater power source, the second heater circuit 26, together with the first heater circuit 16, generates heat and heats the wafer placed on the surface of the first surface 12d.
  • the second heater circuit 26 is not limited to a coil, and may be, for example, a ribbon (a long, thin plate), a mesh, or a print.
  • the ceramic plate assembly 12 may include an inner zone Z1 and an outer zone Z2.
  • the inner zone Z1 is defined as a circular region within a predetermined distance from the center of the ceramic plate assembly 12, while the outer zone Z2 is defined as an annular region outside the inner zone Z1.
  • the first heater circuit 16 is disposed in the outer zone Z2
  • the second heater circuit 26 is disposed in the inner zone Z1. This makes it possible to separately adjust the temperatures of the inner zone Z1 and the outer zone Z2 by the first heater circuit 16 and the second heater circuit 26, respectively, and therefore makes it possible to heat the ceramic plate assembly 12 with a desired temperature distribution profile.
  • the ceramic susceptor 10' preferably further includes a jumper 28.
  • the jumper 28 is embedded in the inner zone Z1 in the lower ceramic plate 12b and is provided so as to connect to the first heater circuit 16.
  • the power supply rod 22 is provided so that one end thereof is connected to the jumper 28 and the other end thereof extends from the second surface 12e to the outside of the ceramic plate assembly 12. In this way, power can be supplied to the first heater circuit 16 via the power supply rod 22 and the jumper 28.
  • the ceramic susceptor 10' preferably further includes a thermocouple insertion hole 32.
  • the thermocouple insertion hole 32 is a vertical hole that passes through the lower ceramic plate 12b from the inner zone Z1 of the second surface 12e to the upper ceramic plate 12a.
  • a second thermocouple 34 By inserting a second thermocouple 34 into this thermocouple insertion hole 32, the temperature in the inner zone Z1 of the ceramic plate assembly 12 or the internal electrode 14 can be measured.
  • the thermocouple insertion hole 32 reaches a depth position closer to the first surface 12d than the second heater circuit 26. This reduces the discrepancy between the temperature of the first surface 12d and the temperature read by the second thermocouple 34 in the thermocouple insertion hole 32.
  • the ceramic susceptor 10' preferably includes a first thermocouple 24 for the outer zone Z2 inserted into the thermocouple insertion path (or thermocouple insertion groove 18).
  • the ceramic susceptor 10' also preferably includes a second thermocouple 34 for the inner zone Z1 inserted into the thermocouple insertion hole 32.
  • a temperature measuring instrument (not shown) can be connected to the distal end of the first thermocouple 24 or the second thermocouple 34.
  • the second thermocouple 34 reaches a depth position closer to the first surface 12d than the first thermocouple 24. Specifically, it is preferable that the ratio of the distance B between the first thermocouple 24 and the first surface 12d to the distance A between the proximal end (the tip closer to the first surface 12d) of the second thermocouple 34 and the first surface 12d (i.e., the value of B/A) is 1.4 to 3.0. In this embodiment, it is preferable that the distance A between the proximal end of the second thermocouple 34 and the first surface 12d is 4 to 6 mm. In addition, it is preferable that the thickness of the ceramic plate assembly 12 is 20 to 35 mm.
  • the temperature of the inner zone Z1 can be accurately measured by the second thermocouple 34, while the undesirable effects of the thermocouple insertion groove 18 for the first thermocouple 24, which has a larger groove area (than the cross-sectional area of the thermocouple insertion hole 32 for the second thermocouple 34) or the first thermocouple 24 inserted therein (caused by the internal electrode 14, which is an ESC electrode or an RF electrode) on the adsorption performance or plasma characteristics can be more effectively reduced.
  • a cylindrical ceramic shaft 36 may be attached (preferably concentrically) to the second surface 12e of the ceramic plate assembly 12.
  • the ceramic shaft 36 is a cylindrical member with an internal space S, and may be configured similarly to a ceramic shaft used in a known ceramic susceptor or ceramic heater.
  • the internal space S is configured so that the terminal rod 20, the power feed rod 22, the power feed rod 30 (if present), the first thermocouple 24, and the second thermocouple 34 (if present) pass therethrough.
  • the ceramic shaft 36 is preferably made of the same ceramic material as the ceramic plate assembly 12. Therefore, the ceramic shaft 36 preferably contains aluminum nitride or aluminum oxide, and more preferably contains aluminum nitride.
  • the upper end surface of the ceramic shaft 36 is preferably joined to the second surface 12e of the ceramic plate assembly 12 by solid-state bonding or diffusion bonding.
  • the outer diameter of the ceramic shaft 36 is not particularly limited, and is, for example, about 40 mm.
  • the inner diameter of the ceramic shaft 36 (the diameter of the internal space S) is not particularly limited, and is, for example, about 36 mm.
  • FIG 3 shows a schematic plan view of the ceramic susceptor 10' as viewed from the ceramic shaft 36 side.
  • the terminal rod 20, the power feed rod 22, the power feed rod 30, the thermocouple insertion hole 32, and the second thermocouple 34 are arranged in a region corresponding to the internal space S surrounded by the side wall of the ceramic shaft 36 when viewed from the ceramic shaft 36 side.
  • the thermocouple insertion groove 18 and the first thermocouple 24 housed therein preferably extend linearly from the thermocouple insertion port 18a in the region corresponding to the internal space S to the thermocouple insertion path end 18b at a predetermined position corresponding to the outer zone Z2 (preferably a position close to the outer periphery of the ceramic plate assembly 12).
  • the ceramic plate assembly 12 or the ceramic susceptor 10, 10' can be manufactured using a known method.
  • the ceramic plate assembly 12 can be manufactured by applying a known ceramic adhesive to the surfaces to be joined of a disk-shaped upper ceramic plate 12a in which the internal electrode 14 and the second heater circuit 26 are embedded and in which a thermocouple insertion groove 18 is formed, and a disk-shaped lower ceramic plate 12b in which the first heater circuit 16 and jumper 28 are embedded, bonding them together, and then appropriately firing them.
  • thermocouple insertion port 18a a thermocouple insertion hole 32, and other holes for inserting various rods, and the first thermocouple 24, the second thermocouple 34, and other various rods can be inserted or connected as necessary.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
PCT/JP2023/043646 2023-12-06 2023-12-06 セラミックサセプタ Pending WO2025120767A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2024556215A JP7812936B2 (ja) 2023-12-06 2023-12-06 セラミックサセプタ
PCT/JP2023/043646 WO2025120767A1 (ja) 2023-12-06 2023-12-06 セラミックサセプタ
TW113134798A TW202538958A (zh) 2023-12-06 2024-09-13 陶瓷基座
US18/905,235 US20250193971A1 (en) 2023-12-06 2024-10-03 Ceramic susceptor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/043646 WO2025120767A1 (ja) 2023-12-06 2023-12-06 セラミックサセプタ

Related Child Applications (1)

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US18/905,235 Continuation US20250193971A1 (en) 2023-12-06 2024-10-03 Ceramic susceptor

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WO2025120767A1 true WO2025120767A1 (ja) 2025-06-12

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JP (1) JP7812936B2 (https=)
TW (1) TW202538958A (https=)
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JP2018536287A (ja) * 2015-11-17 2018-12-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積された表面フィーチャを有する基板支持アセンブリ
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JP2023149343A (ja) * 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材

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