JP7812936B2 - セラミックサセプタ - Google Patents

セラミックサセプタ

Info

Publication number
JP7812936B2
JP7812936B2 JP2024556215A JP2024556215A JP7812936B2 JP 7812936 B2 JP7812936 B2 JP 7812936B2 JP 2024556215 A JP2024556215 A JP 2024556215A JP 2024556215 A JP2024556215 A JP 2024556215A JP 7812936 B2 JP7812936 B2 JP 7812936B2
Authority
JP
Japan
Prior art keywords
ceramic plate
ceramic
thermocouple
heater circuit
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024556215A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025120767A5 (https=
JPWO2025120767A1 (https=
Inventor
尚輝 吉武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2025120767A1 publication Critical patent/JPWO2025120767A1/ja
Publication of JPWO2025120767A5 publication Critical patent/JPWO2025120767A5/ja
Application granted granted Critical
Publication of JP7812936B2 publication Critical patent/JP7812936B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H05B3/283—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
JP2024556215A 2023-12-06 2023-12-06 セラミックサセプタ Active JP7812936B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/043646 WO2025120767A1 (ja) 2023-12-06 2023-12-06 セラミックサセプタ

Publications (3)

Publication Number Publication Date
JPWO2025120767A1 JPWO2025120767A1 (https=) 2025-06-12
JPWO2025120767A5 JPWO2025120767A5 (https=) 2025-11-05
JP7812936B2 true JP7812936B2 (ja) 2026-02-10

Family

ID=95939819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024556215A Active JP7812936B2 (ja) 2023-12-06 2023-12-06 セラミックサセプタ

Country Status (4)

Country Link
US (1) US20250193971A1 (https=)
JP (1) JP7812936B2 (https=)
TW (1) TW202538958A (https=)
WO (1) WO2025120767A1 (https=)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028354A (ja) 2006-07-20 2008-02-07 Applied Materials Inc 急速温度勾配コントロールによる基板処理
JP2009009795A (ja) 2007-06-27 2009-01-15 Taiheiyo Cement Corp セラミックスヒーター
JP2010109346A (ja) 2008-03-11 2010-05-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP2014511572A (ja) 2011-02-23 2014-05-15 アプライド マテリアルズ インコーポレイテッド マルチゾーンペデスタルヒータ用の方法および装置
JP2016189425A (ja) 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法
JP2018536287A (ja) 2015-11-17 2018-12-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積された表面フィーチャを有する基板支持アセンブリ
JP2022014775A (ja) 2020-07-07 2022-01-20 新光電気工業株式会社 セラミックス構造体、静電チャック、基板固定装置
JP2022023629A (ja) 2020-07-27 2022-02-08 日本特殊陶業株式会社 保持装置
JP2023149343A (ja) 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028354A (ja) 2006-07-20 2008-02-07 Applied Materials Inc 急速温度勾配コントロールによる基板処理
JP2009009795A (ja) 2007-06-27 2009-01-15 Taiheiyo Cement Corp セラミックスヒーター
JP2010109346A (ja) 2008-03-11 2010-05-13 Tokyo Electron Ltd 載置台構造及び処理装置
JP2014511572A (ja) 2011-02-23 2014-05-15 アプライド マテリアルズ インコーポレイテッド マルチゾーンペデスタルヒータ用の方法および装置
JP2016189425A (ja) 2015-03-30 2016-11-04 日本特殊陶業株式会社 セラミックヒータ及びその制御方法、並びに、静電チャック及びその制御方法
JP2018536287A (ja) 2015-11-17 2018-12-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 堆積された表面フィーチャを有する基板支持アセンブリ
JP2022014775A (ja) 2020-07-07 2022-01-20 新光電気工業株式会社 セラミックス構造体、静電チャック、基板固定装置
JP2022023629A (ja) 2020-07-27 2022-02-08 日本特殊陶業株式会社 保持装置
JP2023149343A (ja) 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材

Also Published As

Publication number Publication date
TW202538958A (zh) 2025-10-01
WO2025120767A1 (ja) 2025-06-12
US20250193971A1 (en) 2025-06-12
JPWO2025120767A1 (https=) 2025-06-12

Similar Documents

Publication Publication Date Title
KR102471635B1 (ko) 극도의 균일성의 가열식 기판 지지 조립체
JP7290687B2 (ja) 静電チャック及びその製造方法と基板処理装置
JP4881319B2 (ja) 基板を空間的かつ時間的に温度制御するための装置
JP3897563B2 (ja) 加熱装置
CN111869318B (zh) 多区域加热器
US12144067B2 (en) Ceramic heater
TWI803534B (zh) 靜電卡盤裝置
TWI791814B (zh) 晶圓支撐台
US20050173410A1 (en) Ceramic heaters
US11996313B2 (en) Member for semiconductor manufacturing apparatus
WO2020153071A1 (ja) セラミックヒータ
JP4640842B2 (ja) 加熱装置
JP7257211B2 (ja) セラミックヒータ
WO2020153086A1 (ja) セラミックヒータ
KR100709536B1 (ko) 가열 장치
JP7812936B2 (ja) セラミックサセプタ
JP7248607B2 (ja) セラミックヒータ
JP6789081B2 (ja) 保持装置
JP7746577B2 (ja) セラミックサセプタ
WO2026038386A1 (ja) セラミックヒータ
CN113395793B (zh) 陶瓷加热器
JP7638384B1 (ja) セラミックヒータ及びそれを含むキット、並びにセラミックヒータの放熱特性を調整する方法
JP7727114B1 (ja) セラミックヒータ
JP2025173436A (ja) セラミックヒータ
TW202518667A (zh) 靜電吸盤及其製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240920

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251113

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20260129

R150 Certificate of patent or registration of utility model

Ref document number: 7812936

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150