WO2024142328A1 - 移送装置及び移送方法 - Google Patents

移送装置及び移送方法 Download PDF

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Publication number
WO2024142328A1
WO2024142328A1 PCT/JP2022/048404 JP2022048404W WO2024142328A1 WO 2024142328 A1 WO2024142328 A1 WO 2024142328A1 JP 2022048404 W JP2022048404 W JP 2022048404W WO 2024142328 A1 WO2024142328 A1 WO 2024142328A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
laser
optical system
transfer
starting substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/048404
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
義和 大谷
裕 山岡
健人 宇佐美
昌実 倉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Engineering Co Ltd
Original Assignee
Shin Etsu Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Engineering Co Ltd filed Critical Shin Etsu Engineering Co Ltd
Priority to CN202280102819.1A priority Critical patent/CN120418937A/zh
Priority to DE112022008132.5T priority patent/DE112022008132T5/de
Priority to KR1020257020433A priority patent/KR20250128973A/ko
Priority to JP2024567103A priority patent/JPWO2024142328A1/ja
Priority to PCT/JP2022/048404 priority patent/WO2024142328A1/ja
Priority to TW112149836A priority patent/TW202427663A/zh
Publication of WO2024142328A1 publication Critical patent/WO2024142328A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/03—Manufacture or treatment using mass transfer of LEDs, e.g. by using liquid suspensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G54/00—Non-mechanical conveyors not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/019—Removal of at least a part of a substrate on which semiconductor layers have been formed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

Definitions

  • the LED chips 6 include a defective LED chip 6D, as shown in Fig. 12(b), a laser Lt that transmits through the sapphire substrate 110 is irradiated from the laser light source 3 to the rear surface of the sapphire substrate 110 (the rear surface opposite to the front surface on which the LED chip 6 is provided) at the interface between the defective LED chip 6D and the sapphire substrate 110, and the defective LED chip 6 is peeled off and removed from the sapphire substrate 110.
  • This process can be called, for example, a trimming process. Note that, when there is no defective LED chip 6D, this trimming process can be omitted.
  • the defective LED chip 6D is removed as shown in FIG. 13(f).
  • This process can be performed in the same manner as the trimming process shown in FIG. 12(b). Therefore, this process can also be called a trimming process.
  • this trimming process can be omitted.
  • the LED chip 6 on the second intermediate substrate 120 as the starting substrate is transferred to the finished substrate 220 (having an adhesive layer 221 on its surface) as the destination substrate by using a laser LM .
  • This process can also be called a transfer process.
  • a transfer device for transferring an object provided on a starting substrate from the starting substrate to a destination substrate by using a laser
  • the transfer device comprising: a laser light source configured to oscillate the laser; A first optical system; and a second optical system having an optical configuration different from the optical configuration of the first optical system; a switching mechanism configured to switch the optical path of the laser between an optical path to the first optical system and an optical path to the second optical system; Equipped with the first optical system is configured to simultaneously irradiate a plurality of objects from a back surface side of the starting substrate with the laser, thereby simultaneously transferring the plurality of objects to the destination substrate surface;
  • a transfer device is provided, wherein the second optical system is configured to remove a single object from the starting substrate or transfer the single object to a destination substrate surface by irradiating the laser onto the single object from the back side of the starting substrate.
  • the switching mechanism may include a mirror.
  • the switching mechanism may include, for example, a mirror.
  • the trimming process and transfer process can be performed in one transfer device. Therefore, if the laser transfer process is performed on the same starting substrate, there is no need to remove and attach the substrate, and the object can be transferred with high productivity. Furthermore, because this transfer method can be performed on one device, both the footprint and capital investment can be reduced.
  • the second optical system 2 is a second optical system 2B that is configured to selectively irradiate a laser L 1 T or L 1 R from the back side of the starting substrate 100 as shown in, for example, FIG. 5 or FIG. 6 to remove an object (defective object) 6D from the starting substrate 100 (i.e., perform a trimming process) or transfer an object (replenishment chip) 6R to the surface of the target substrate 200 (i.e., perform a repair process), as shown in, for example, FIG. 5 or FIG.
  • Figure 9 shows an example of alignment used in the gap laser lift-off process, transfer process, and repair process.
  • Figure 11 shows an example of alignment used in the contact laser lift-off process.
  • the same sapphire substrate 110 is used as the starting substrate 100 for the alignment of the laser lift-off process and the alignment of the preceding trimming process. Therefore, by using the transfer device 10 of the present invention, the trimming process before the laser lift-off process and the laser lift-off process can be performed in a single operation without changing the starting substrate 100.
  • a transfer device 10 is prepared (device preparation process) that includes a laser light source 3 configured to oscillate a laser, a first optical system 1, and a second optical system 2, as shown in FIG. 1.
  • the transfer step in FIG. 13(g) to the repair step in FIG. 14(h) can be performed in a series of operations without changing the setup of the starting substrate (the second intermediate substrate 120).

Landscapes

  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
PCT/JP2022/048404 2022-12-27 2022-12-27 移送装置及び移送方法 Ceased WO2024142328A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN202280102819.1A CN120418937A (zh) 2022-12-27 2022-12-27 传送装置及传送方法
DE112022008132.5T DE112022008132T5 (de) 2022-12-27 2022-12-27 Transporteinrichtung und transportverfahren
KR1020257020433A KR20250128973A (ko) 2022-12-27 2022-12-27 이송 장치 및 이송 방법
JP2024567103A JPWO2024142328A1 (https=) 2022-12-27 2022-12-27
PCT/JP2022/048404 WO2024142328A1 (ja) 2022-12-27 2022-12-27 移送装置及び移送方法
TW112149836A TW202427663A (zh) 2022-12-27 2023-12-20 傳送裝置及傳送方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/048404 WO2024142328A1 (ja) 2022-12-27 2022-12-27 移送装置及び移送方法

Publications (1)

Publication Number Publication Date
WO2024142328A1 true WO2024142328A1 (ja) 2024-07-04

Family

ID=91716821

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Application Number Title Priority Date Filing Date
PCT/JP2022/048404 Ceased WO2024142328A1 (ja) 2022-12-27 2022-12-27 移送装置及び移送方法

Country Status (6)

Country Link
JP (1) JPWO2024142328A1 (https=)
KR (1) KR20250128973A (https=)
CN (1) CN120418937A (https=)
DE (1) DE112022008132T5 (https=)
TW (1) TW202427663A (https=)
WO (1) WO2024142328A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041500A (ja) * 2004-06-23 2006-02-09 Sony Corp 素子の転写方法、素子の間引き方法及び素子の転写装置
JP2018060993A (ja) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置
WO2021193135A1 (ja) * 2020-03-23 2021-09-30 東レエンジニアリング株式会社 実装方法、実装装置、および転写装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102475755B1 (ko) 2019-10-02 2022-12-09 에이피시스템 주식회사 칩 전사 방법 및 장치
EP4375002A4 (en) 2021-07-20 2025-07-09 Shinetsu Chemical Co SCANNING-TYPE REDUCTION PROJECTION OPTICAL SYSTEM AND LASER MACHINING APPARATUS USING SAME

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041500A (ja) * 2004-06-23 2006-02-09 Sony Corp 素子の転写方法、素子の間引き方法及び素子の転写装置
JP2018060993A (ja) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置
WO2021193135A1 (ja) * 2020-03-23 2021-09-30 東レエンジニアリング株式会社 実装方法、実装装置、および転写装置

Also Published As

Publication number Publication date
KR20250128973A (ko) 2025-08-28
DE112022008132T5 (de) 2025-10-16
TW202427663A (zh) 2024-07-01
CN120418937A (zh) 2025-08-01
JPWO2024142328A1 (https=) 2024-07-04

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