WO2024127679A1 - 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 - Google Patents

半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 Download PDF

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WO2024127679A1
WO2024127679A1 PCT/JP2022/046559 JP2022046559W WO2024127679A1 WO 2024127679 A1 WO2024127679 A1 WO 2024127679A1 JP 2022046559 W JP2022046559 W JP 2022046559W WO 2024127679 A1 WO2024127679 A1 WO 2024127679A1
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Prior art keywords
diamond
abrasive grains
grinding
processing
grindstone
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PCT/JP2022/046559
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English (en)
French (fr)
Japanese (ja)
Inventor
龍司 大島
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Disco Corp
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Disco Corp
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Priority to PCT/JP2022/046559 priority Critical patent/WO2024127679A1/ja
Priority to JP2023562166A priority patent/JP7479577B1/ja
Priority to JP2023174864A priority patent/JP7496026B1/ja
Priority to TW112148498A priority patent/TWI879305B/zh
Publication of WO2024127679A1 publication Critical patent/WO2024127679A1/ja
Anticipated expiration legal-status Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Definitions

  • the present invention relates to a semiconductor component processing grindstone for processing semiconductor components such as semiconductor substrates, a semiconductor component processing tool, a semiconductor manufacturing device, and a method for manufacturing a semiconductor component processing grindstone.
  • Diamond is the hardest substance and is widely used in grinding wheels for polishing and grinding various materials such as silicon, and for cutting integrated circuits. In recent years, grinding wheels made of single-crystalline diamond have been attracting attention.
  • Single-crystalline diamonds include natural diamonds and synthetic diamonds.
  • Most natural diamonds are type Ia, and contain nitrogen in the lattice or between the lattices.
  • type IIa diamonds do exist, there is a large variation in the impurity content and crystal structure, making their quality and performance unstable.
  • the price of natural diamonds fluctuates depending on the amount mined, making stable supply a challenge, and they are expensive.
  • synthetic diamonds can be supplied with a more consistent quality than natural diamonds.
  • Patent Document 1 discloses a processing method using diamond, which has high toughness and wear resistance. According to this document, high toughness and wear-resistant hardness are improved by irradiating diamond with an electron beam to create isolated vacancy defects.
  • Patent Document 2 discloses a single crystal CVD synthetic diamond material having nitrogen defects that are both highly concentrated and uniformly distributed for optical filtering, mechanical and jewelry applications.
  • the synthesis method disclosed in the same document also discloses that as-grown nitrogen vacancy defects are present at a predetermined concentration or more, and may be preferably annealed and/or irradiated.
  • the annealing temperature is as high as 1000°C at the lowest, and many isolated vacancy defects exist in the diamond.
  • the document describes that isolated vacancy defects exhibit high toughness and wear resistance to inhibit the progression of cracks, and describes that many isolated vacancy defects must be formed to exhibit high toughness.
  • the diamond material described in Patent Document 1 has excellent toughness, the shape of the diamond is maintained even after long-term processing.
  • the processing point which is the contact point between the diamond material and the workpiece, is not constantly maintained in the sharp state before processing. In polishing and grinding processing, if a diamond material with toughness and/or wear resistance is used, the grinding wheel will be dulled and the desired processing accuracy will not be obtained. In addition, in cutting processing, it will gradually become difficult to obtain a good quality cut line.
  • paragraphs 0020 and 0032 of Patent Document 1 state that a single crystal chemical vapor deposition (hereinafter, appropriately referred to as "CVD") diamond plate may be used to form a cutting blade and heated to a temperature of about 700°C or more after irradiation with an electron beam or the like to bring about branding with a unique color.
  • CVD chemical vapor deposition
  • countless processes of generation by CVD film formation and crushing are required, which is not realistic.
  • the amount of CVD diamond obtained by one CVD film formation is about several grams, and it is almost impossible to obtain a large amount of abrasive grains for grinding wheels.
  • the CVD diamond described in Patent Document 2 is used not only for mechanical applications but also for optical filtering and jewelry applications, and is therefore not suitable for mechanical applications such as polishing, grinding, and cutting.
  • the document also describes its use for mechanical applications, and describes the provision of a diamond in which nitrogen vacancy defects are uniformly distributed in order to solve problems such as the non-uniform wear resistance and reduced fracture toughness of CVD diamond. For this reason, even with abrasive grains made from the CVD diamond described in Patent Document 2, issues remain with grinding, polishing, and cutting, just as with Patent Document 1.
  • the object of the present invention is to provide a grindstone for processing semiconductor components, a tool for processing semiconductor components, a semiconductor manufacturing device, and a method for manufacturing the grindstone for processing semiconductor components, which have excellent quality of the processed surface of the semiconductor components and high durability.
  • a hard, low-toughness diamond is type IIa natural diamond, which has an extremely low nitrogen content.
  • natural diamonds have a large variation in impurity content and crystal structure, making their quality and performance unstable.
  • the price of natural diamonds fluctuates depending on the amount mined, leaving issues with stable supply, and they are expensive.
  • the inventors therefore conducted extensive research into the use of high-quality diamonds, using artificially produced Ib-type synthetic diamonds.
  • diamond materials have been irradiated with electron beams and annealed at high temperatures to improve toughness, but the inventors believed that diamond abrasive grains with low toughness would have improved self-sharpening properties during processing due to crystal cleavage and/or wear, and as a result, the quality of the polished and ground surface would improve without reducing the durability of the grinding wheel.
  • Patent Documents 1 and 2 each state that diamonds discolor, but do not specifically disclose how to control the color. This is because the color changes depending on the state of the raw material, such as the state before irradiation with electron beams or the state before annealing.
  • the annealing temperature is raised to a certain temperature or higher to improve toughness, but high toughness is considered sufficient, and no specific means of controlling discoloration are disclosed. For this reason, in order to control the toughness to an appropriate level so that it is not too high, it is not possible to control it by the color of the diamond alone.
  • a grinding wheel for machining semiconductor components comprising HPHT single crystal diamond abrasive grains, characterized in that the average value of the diamond peak wavenumber obtained by diamond peak measurement by Raman spectroscopy performed on the HPHT single crystal diamond abrasive grains is smaller than the average value of the diamond peak wavenumber obtained by measurement by Raman spectroscopy performed on type IIa single crystal diamond.
  • a method for manufacturing a grindstone for processing semiconductor components according to any one of (1) to (5) above which comprises irradiating HPHTIb type synthetic diamond particles with at least one of ions, electrons, protons, neutrons, and gamma rays, and then annealing the particles at a temperature of less than 800°C for 10 to 240 minutes.
  • FIG. 1 shows the results of mapping measurements obtained by Raman spectroscopy using a 785 nm laser for diamonds produced under various conditions.
  • FIG. 2 is a schematic cross-sectional view of a hub blade for explaining an outline of the process of forming a protective layer on the hub blade.
  • Figure 3 is a schematic cross-sectional view of a hub blade,
  • Figure 3(A) is a schematic cross-sectional view showing the state of the base after the grinding wheel has been formed, and
  • Figure 3(B) is an enlarged schematic cross-sectional view of the outer periphery of the base shown in Figure 3(A).
  • Figure 4 is a schematic cross-sectional view of a hub blade
  • Figure 4(A) is a schematic cross-sectional view showing the state of the base after the base has been removed
  • Figure 4(B) is an enlarged schematic cross-sectional view of the outer periphery of the base shown in Figure 4(A).
  • Figure 5 is a schematic cross-sectional view of a hub blade
  • Figure 5(A) is a schematic cross-sectional view showing the state of the base after the protective layer has been removed
  • Figure 5(B) is an enlarged schematic cross-sectional view of the outer periphery of the base shown in Figure 5(A).
  • FIG. 6 is a perspective view showing a schematic diagram of the completed electroplated grinding wheel.
  • FIG. 7 shows the relationship between the cutting length and the amount of wear when cutting a silicon substrate with a cutting wheel made of diamond abrasive grains of type Ib synthetic diamond (As), diamond after electron beam irradiation (XP), and diamond annealed at 650°C after electron beam irradiation (XP-AN).
  • FIG. 8 is a graph showing the cutting life of the hub blade grindstone using the three types of diamond abrasive grains shown in FIG.
  • FIG. 9 is a perspective view of a grinding device equipped with a grinding wheel using abrasive grains.
  • FIG. 10 is a graph showing the surface roughness of the ground surface obtained by grinding with the grinding wheel using the three types of diamond abrasive grains shown in FIG.
  • semiconductor member processing grindstone is a processing grindstone used for processing semiconductor members, since it can form a high-quality processed surface.
  • semiconductor member processing tools equipped with the semiconductor member processing grindstone according to the present invention include cutting grindstones such as hub blade grindstones, and grinding/polishing grindstones such as grind wheel grindstones.
  • Hub blades are cutting wheels that are primarily used in dicing equipment. They are made by electroplating nickel or nickel alloy with diamond abrasive grains dispersed on the outer periphery of a disk-shaped hub base made of aluminum or stainless steel.
  • a grinding wheel is a grinding/polishing wheel with multiple roughly rectangular grinding stones attached to the end of a disk base.
  • the grinding wheel grinding stones rotate and come into contact with the substrate, grinding and polishing the substrate.
  • the substrate rubs against the grinding stones, and the frictional heat generated by this causes the grinding stones to wear out easily.
  • Processing wheels are made by bonding diamond abrasive grains with a binder such as resin or vitrified glass.
  • the abrasive grains that make up the grindstones on conventional grinding wheels are diamond grains, which have high toughness, so the grinding and polishing efficiency deteriorates as the time of use increases. For this reason, it becomes necessary to increase the rotation speed of the grinding wheel to shorten the grinding and polishing time. However, increasing the rotation speed causes the substrate to heat up. In addition, the grindstones can be damaged, resulting in a short lifespan.
  • the grindstones used in the hub blades and grind wheels are equipped with diamond abrasive grains for semiconductor component processing grindstones according to the present invention.
  • the diamond abrasive grains for semiconductor component processing grindstones according to the present invention have low toughness, so even silicon substrates, which have low rigidity, do not chip over a long period of time. Details of the diamond abrasive grains used in the semiconductor component processing grindstones according to the present invention will be described later.
  • the semiconductor member refers to a substrate such as a silicon substrate, a resin substrate, a glass plate, a GaN substrate, a sapphire substrate, a semiconductor substrate having one or more semiconductor films laminated on a semiconductor substrate, a semiconductor substrate molded with resin, and a semiconductor chip cut from a conductor substrate.
  • the semiconductor member also includes a semiconductor wafer having a plurality of semiconductor chips. The diamond abrasive grains for the grindstone of semiconductor member processing used in the present invention are preferably used for the grindstone for processing these semiconductor members.
  • Diamond abrasive grains The semiconductor material processing grindstone according to the present invention is equipped with diamond abrasive grains.
  • the presence of nitrogen atoms in Ib type diamond shortens the interatomic distance due to the bond between carbon and nitrogen, so that the diamond is in a state of being given compressive stress.
  • the vicinity of the nitrogen and the bond between the carbon atoms are damaged. It is presumed that this damage relieves the compressive stress in the crystal, and the toughness of Ib type diamond is reduced.
  • the diamond abrasive grains with moderate damage formed as in the present invention are close to the characteristics of IIa diamonds with very few nitrogen atoms, so that in cutting processing where stress such as impact is applied, the diamond abrasive grains are broken one after another by continued use, and self-sharpening blades are generated, so that the diamond abrasive grains exhibit excellent durability.
  • Diamonds with such damaged areas are repaired by rebonding the damaged areas through annealing.
  • compressive stress is again applied, and the toughness and/or wear resistance is moderately increased compared to conventional diamonds.
  • the diamond abrasive grains have weaker self-sharpening performance due to improved toughness and/or wear resistance, and the diamond abrasive grains are less likely to be broken due to their durability.
  • the self-sharpening performance of the abrasive grains cannot be improved, and in order for the abrasive grains to demonstrate their durability in grinding/polishing and cutting processes, it is important to repair the damaged areas appropriately through annealing, and there is an appropriate temperature range.
  • the strength and toughness of the diamond abrasive grains in the semiconductor component processing grindstone of the present invention affect various processes, so the durability of the semiconductor component processing grindstone can be controlled. As a result, chipping during processing is suppressed, resulting in a high-quality processed surface.
  • the diamond abrasive grains for semiconductor component processing grindstones of the present invention which have a technical concept that takes into account the toughness of diamond abrasive grains and is the polar opposite of conventional technology, can be used to confirm the stress inside the crystal by wavenumber shift of the Raman peak through Raman spectroscopy measurement. This measurement is performed by irradiating a 785 nm laser.
  • the Raman peak of diamond abrasive grains is significantly shifted to the lower end compared to type IIa diamond. If the annealing temperature is then increased in the range of 500-1100°C, the peak gradually shifts to the higher wavenumber side. Above 800°C, the peak shows a wavenumber distribution similar to that of type IIa diamond abrasive grains. For this reason, below 800°C, the peak shifts to a lower wavenumber than natural IIa diamond, and diamond with relaxed internal crystal stress is obtained. In this way, diamond abrasive grains annealed at temperatures below 800°C are low-toughness abrasive grains with relaxed internal stress, and have a structure suitable for use as grinding wheels for processing semiconductor components.
  • the wavenumber distribution obtained by Raman spectroscopy is obtained by tallying the frequency of the Raman peaks at each wavenumber.
  • the average wavenumber is calculated by multiplying the frequency of each wavenumber by the wavenumber and dividing the total by the frequency.
  • the wavenumber shift represents the internal stress of the diamond abrasive grain.
  • the average wavenumber of the obtained diamond abrasive grain is lower than that of type IIa natural diamond. When the average wavenumber is lower than that of type IIa natural diamond, the diamond exhibits low toughness, and when used as a grindstone, a high-quality processed surface is maintained for a long period of time.
  • the difference calculated by subtracting the average wavenumber obtained from the average wavenumber of type IIa, dividing the subtracted value by the average wavenumber of type IIa, and multiplying by 100 is preferably 0.0001% or more, more preferably 0.0005% or more, even more preferably 0.0010% or more, particularly preferably 0.0014% or more, and most preferably 0.0020% or more.
  • the upper limit is not particularly limited, but is preferably 1.0000% or less, more preferably 0.1000% or less, even more preferably 0.0100% or less, and particularly preferably 0.0030% or less.
  • the diamond abrasive grains of the semiconductor component processing grinding wheel of the present invention have a moderate amount of residual damage near the nitrogen and at the carbon junction compared to conventional methods. This goes against common technical knowledge, and it is only by this means that the durability of the semiconductor component processing grinding wheel and the high quality of the processed surface can be obtained.
  • the diamond abrasive grains provided in the semiconductor component processing grinding wheel of the present invention are manufactured by HPHT, and therefore, unlike diamonds manufactured by CVD, are single crystalline with no grain boundaries. Even if you try to control damage with CVD diamond, it is difficult to control the internal stress throughout the entire grain due to the grain boundaries, so it is not possible to demonstrate adequate toughness. For this reason, it is necessary to use HPHT diamond abrasive grains for diamond abrasive grains that are intended to have greater toughness and/or durability.
  • the particle size of the diamond abrasive grains in the semiconductor component processing grinding wheel according to the present invention is preferably 0.25 to 50 ⁇ m. Within this range, the particles are not too large and can be used in a wide range of applications. For example, when used for hub blades, the particle size is preferably 1 to 30 ⁇ m, and more preferably 1 to 5 ⁇ m. When used for glide wheels, the particle size is preferably 0.25 to 50 ⁇ m, more preferably 3 to 40 ⁇ m, and most preferably 3 to 30 ⁇ m.
  • the volume average diameter D50 value of a laser diffraction scattering type particle size distribution measuring device (for example, model: Mastersizer 2000 manufactured by Malvern Instruments, model: Microtrac MT3000, Microtrac UPA, etc. manufactured by Microtrac Bell) can be used as the average particle size.
  • the diamond abrasive grains of the semiconductor component processing grinding wheel of the present invention may also have crystal nuclei and/or crystal defects derived from carbon compounds. With conventional diamond particles, if crystal nuclei or crystal defects remain, a crystal interface is formed on the surface containing these, resulting in polycrystals.
  • the single crystal diamond of the present invention has a uniform crystal orientation in the entire region including these and their surroundings, and the synthesized diamond grains are single crystals.
  • the single crystal diamond abrasive grains of the semiconductor component processing grinding wheel of the present invention can be manufactured preferably without using a metal catalyst, and therefore have extremely high purity, and the components of the decomposed carbon compounds other than carbon are released to the outside without remaining within the single crystal diamond grain, resulting in extremely few defects.
  • Crystal nuclei and/or crystal defects derived from carbon compounds can be easily confirmed in TEM images, etc. However, these defects are merely observed on the surface of the sample by chance, and do not reach deep inside the particles. Even if such slight defects are present, the crystal orientation is aligned in the entire area, including the crystal nuclei and their surroundings. Furthermore, the crystal nuclei and crystal defects are derived from the carbon compounds, which will be described later. The crystal nuclei and crystal defects are a residual structure of the carbon compound before it was formed to some extent.
  • the single crystal diamond abrasive grains in the grinding wheel for processing semiconductor components according to the present invention may have a smooth crystal surface. As described below, the smooth surface is maintained even when irradiated and, if necessary, annealed. Furthermore, the use of single crystal diamond abrasive grains with a smooth surface is particularly effective when used in the grinding wheel for processing semiconductor components according to the present invention. When single crystal diamond abrasive grains have a smooth surface, stress is applied uniformly to the grains, resulting in homogeneous self-sharpening of the cutting edge, and high performance as a grinding wheel is maintained.
  • the semiconductor manufacturing apparatus according to the present invention is equipped with the semiconductor member processing tool according to the present invention.
  • a grinding apparatus equipped with the semiconductor processing grindstone according to the present invention may have the following configuration.
  • the grinding device may include, for example, a first cassette and a second cassette containing a plurality of wafers W as workpieces, a common loading/unloading means that serves both as an unloading means for unloading the wafers from the first cassette and as an loading means for loading the ground wafers W into the second cassette, an alignment means for aligning the center of the wafer, a transport means for transporting the wafers W, three chuck tables for suction-holding the wafers, a turntable for rotatably supporting and rotating each of these chuck tables, a grinding means that is a processing means for performing a grinding process as processing on the wafers held on each chuck table, a cleaning means for cleaning the wafers after grinding, and a cleaning means for cleaning the chuck tables after grinding.
  • the wafer stored in the first cassette may be transported to the alignment means by the transport operation of the loading/unloading means, where it is centered and then transported and placed on the chuck table by the transport means.
  • the three chuck tables mentioned above may be arranged at equal intervals around the circumferential direction of the turntable, each of which may be rotatable and move on the XY plane as the turntable rotates.
  • the chuck table may be positioned directly below the grinding means by rotating a predetermined angle, for example 120 degrees counterclockwise, while holding the wafer by suction.
  • the grinding means grinds the wafer held on the chuck table, and may be provided on a wall erected at the end of the base in the Y-axis direction.
  • the grinding means may be guided by a pair of guide rails arranged in the Z-axis direction on the wall, and supported by a support that moves up and down driven by a motor, and may be configured to move up and down in the Z-axis direction with the up and down movement of the support.
  • the grinding means includes a motor that rotates a rotatably supported spindle, and a grinding wheel that is attached to the tip of the spindle via a wheel mount and grinds the back surface of the wafer.
  • the grinding wheel may include a grinding stone for rough grinding fixed in an annular shape to its underside.
  • Rough grinding may be performed by rotating the grinding wheel by rotating the spindle with a motor and feeding it downward in the Z-axis direction, so that the rotating grinding wheel comes into contact with the back surface of the wafer, thereby grinding the back surface of the wafer held on the chuck table and positioned directly below the grinding means.
  • the turntable may rotate a predetermined angle counterclockwise, so that the roughly ground wafer is positioned directly below the grinding means.
  • the grinding means grinds the wafer held on the chuck table, and may be configured to be guided by a pair of guide rails arranged in the Z-axis direction on the wall, supported by a support section that moves up and down driven by a motor, and move up and down in the Z-axis direction with the up and down movement of the support section.
  • the grinding means may include a motor that rotates a rotatably supported spindle, and a grinding wheel that is attached to the tip of the spindle via a wheel mount and grinds the back surface of the wafer.
  • the grinding wheel may include a grinding stone for finish grinding fixed in an annular shape to its underside. In other words, the grinding means may have the same basic configuration as the grinding means, with only the type of grinding stone being different.
  • Finish grinding may be performed by rotating the grinding wheel by rotating the spindle with a motor and grinding downward in the Z-axis direction, so that the rotating grinding wheel comes into contact with the back surface of the wafer and grinds the back surface of the wafer held on the chuck table and positioned directly below the grinding means.
  • the turntable may be rotated counterclockwise by a predetermined angle to return to the initial position described above.
  • the wafer may be transported to the cleaning means by the transport means, and after the grinding debris is removed by cleaning, the wafer may be transported into the second cassette by the transport operation of the transport means.
  • the cleaning means may use pure water to clean the chuck table that has been left empty after the finish-ground wafer has been picked up by the transport means.
  • rough grinding, finish grinding, and transport of the wafer to and from the other chuck table may be performed in the same manner according to the rotation position of the turntable.
  • the grinding wheel described above contains diamond abrasive grains.
  • the grinding wheel may be constructed by mixing diamond abrasive grains with a resin bond such as vitrified.
  • the structure of the grinding wheel is as described above.
  • the manufacturing method of diamond abrasive grains for semiconductor material grindstone according to the present invention is a manufacturing method of single crystal diamond using a high temperature and high pressure method, and can be manufactured in the same manner as in the past except that the manufacturing method of diamond abrasive grains is different from the conventional one.
  • the raw material is a mixture of carbon raw material such as graphite and amorphous carbon and catalyst metal such as Fe, Co, Ni, Mn, etc.
  • the impurity concentration of these raw materials is less than 100 ppm, and the arithmetic mean particle size is 5 to 1000 ⁇ m.
  • the mixing ratio of carbon raw material and catalyst metal is 3:7 to 7:3.
  • the pressure is more preferably 6 GPa or more, and the temperature is more preferably 1400°C or more.
  • the pressure is more preferably 9.5 GPa or less, and more preferably 8 GPa or less, and the temperature is more preferably 1700°C or less, and more preferably 1600°C or less. From the viewpoint of diamond yield, it is preferable to raise the pressure to within the above range, and then raise the temperature to the above range.
  • Examples of synthesis apparatuses used in HPHT include anvil-cylinder types such as belt types represented by uniaxial presses, toroidal types and Chechevica types with opposing anvils, tetrahedral types and multi-anvil types of multiaxial presses, etc.
  • the time for which the raw material is exposed to the thermodynamically stable region is preferably 30 minutes or less. Within this time, a high conversion rate from the carbon source raw material to diamond can be obtained. There is no particular lower limit, but it is sufficient if it is 1 second or more.
  • the pressure profile and temperature profile are not particularly limited, and the pressurization rate and temperature rise rate can be set within the range of the device specifications.
  • the diamond particles produced by the HPHT method may be crushed to obtain the desired abrasive grain size.
  • the crushing method is not particularly limited, but it may be performed using a crusher such as a ball mill or a jet mill.
  • the grain size of the resulting crushed powder is preferably 0.25 to 50 ⁇ m.
  • the pulverized diamond particles are irradiated with at least one of ions, electrons, protons, neutrons, and gamma rays to produce diamond abrasive grains.
  • the irradiation conditions are not particularly limited, and may be the same as those of the conventional method.
  • the dose may be 1 ⁇ 10 15 e ⁇ /cm 2 to 1 ⁇ 10 19 e ⁇ /cm 2.
  • the irradiation energy may be appropriately adjusted within the range of 30 keV to 12 MeV.
  • the temperature of the diamond particles during irradiation may not be higher than the annealing temperature described later, and may be room temperature or 100° C. or higher and lower than 800° C., so as not to increase the toughness of the diamond abrasive grains.
  • annealing is performed at a temperature below 800°C for 10 to 240 minutes. Conventionally, annealing was performed at a high temperature of at least 1000°C or more to obtain high toughness. In contrast, in the manufacture of diamond abrasive grains of the present invention, annealing must be performed at a lower temperature than conventionally in order to minimize the increase in toughness.
  • the lower limit of the annealing temperature is not particularly limited, but in order to obtain appropriate toughness, it is preferably room temperature or higher, and more preferably 100°C or higher.
  • the annealing time does not greatly affect the characteristics of the diamond abrasive grains, but in order to prevent the manufacturing time from becoming too long, it is sufficient to be within the above-mentioned range, and more preferably 30 to 120 minutes.
  • the temperature rise and fall rate is not particularly limited, but is not particularly limited as long as it is within the range that the annealing device can control, and may be, for example, 5 to 20°C/min.
  • the annealing temperature is preferably 600°C or higher but lower than 800°C, with 600 to 700 being more preferable.
  • annealing slightly improves toughness in a range of toughness lower than conventional wheels, which causes fine fractures in the diamond abrasive grains during processing, resulting in lower surface roughness or less chipping, improving the durability of the wheel and providing a high-quality machined surface.
  • the annealing temperature is preferably room temperature or higher but less than 800°C, and more preferably room temperature to 650°C.
  • the durability of the wheel is improved and a high-quality machined surface can be obtained.
  • the diamond abrasive grains obtained as described above are mixed with a resin bond such as vitrified. They are then hardened and processed into a desired shape to obtain the desired grinding wheel for processing semiconductor components.
  • a raw material that does not use a metal catalyst may be selected as a method for manufacturing diamond abrasive grains.
  • diamond may be synthesized by exposing a raw material consisting of amorphous carbon and a carbon compound to pressure and temperature in the thermodynamically stable region of diamond in the phase equilibrium diagram of carbon.
  • metal impurities are not included, the effect of irradiation on the diamond bond is significant, so it is thought that the diamond shifts to the lower fraction side. This is noticeable when the annealing temperature is in the range of less than 800°C.
  • the diamond abrasive grains used in the semiconductor processing grinding wheel of the present invention do not contain metal impurities and are equipped with crystal nuclei and/or crystal defects derived from carbon compounds, so that when used in the grinding wheel, a sharper and more uniform self-sharpening edge is generated, making it easier to obtain a high-quality processed surface and achieving excellent processing performance.
  • the "amorphous carbon” used in the manufacturing method of the present invention refers to carbon that is amorphous and does not have a fixed crystal structure. Among these, solid carbon that is easy to handle is preferable, and carbon black is preferable. In addition, it may contain unavoidable impurities. In the present invention, those having a certain crystal structure such as diamond and graphite are excluded from the “amorphous carbon” of the present invention. In addition, “carbon compounds” described later are also excluded from the “amorphous carbon”.
  • the manufacturing method according to the present invention can produce single crystal diamonds without being limited by the purity of the raw materials.
  • the amorphous carbon containing carbon black has an impurity concentration of less than 30 ppm and an arithmetic mean particle size of 16 to 200 nm. More preferably, it is 16 to 100 nm, and even more preferably, it is 16 to 70 nm. If it is within this range, there is no need to complicate the temperature profile and pressure profile.
  • the carbon compound used in the present invention is not particularly limited as long as it is a compound containing C, and includes, for example, inorganic compound materials including carbon monoxide, carbon dioxide, hydrocyanic acid, cyanates, and thiocyanates, as well as organic materials. However, amorphous carbon and metal salts are not included.
  • the carbon compound is not particularly limited, but is not limited to any material that can be thermally decomposed and carbonized, such as tires, toner, hair, wood, and waste plastics. When using such recycled resources, they can be used as raw materials if they are crushed into small pieces so that carbonization by thermal decomposition is easy.
  • solids such as coal, coke, charcoal, soot, and glassy carbon, liquids such as naphtha (gasoline), kerosene, light oil, and heavy oil, and gases such as natural gas are also included.
  • the carbon compound is preferably an organic compound, preferably a liquid or solid at room temperature, and particularly preferably a solid, so that it is easy to handle as a raw material.
  • the organic compound is more preferably made of hydrogen, oxygen, and carbon, and is preferably hydrogen and/or hydroxyl groups and carbon.
  • the carbon compounds used in the present invention include aliphatic, aromatic, and alicyclic hydrocarbons, which may be saturated or unsaturated, and may be monomeric, oligomeric, or polymeric.
  • alkanes include methane, ethane, propane, butane, pentane, hexane, heptane, octane, nonane, and decane; alkenes such as ethene (ethylene), propene (propylene), butene (butylene), pentene, hexene, heptene, octene, nonene, and decene; alkynes such as ethyne (acetylene), propyne (methylacetylene), butyne, pentine, hexyne, heptyne, octyne, nonine, and decyne; cycloalkanes such as cyclopropan
  • substituents such as alcohols with hydroxyl groups, such as methanol, ethanol, and propanol, sulfone groups, nitro groups, nitroso groups, epoxy groups, aldehyde groups, amino groups, acyl groups, carbonyl groups, and carboxyl groups, and may be oligomers of these or polymers such as polyethylene, polypropylene, and polyethylene terephthalate.
  • the organic compound has a carbon atom of sp 3 hybrid orbital, and the number of carbon atoms is preferably 1-10, preferably 4-6, and particularly preferably 5.
  • the organic compound is preferably a polyhydric alcohol.
  • the polyhydric alcohol trihydric to octahydric alcohols are preferable, and tetrahydric alcohols are more preferable. It is more preferable that all carbon elements in the polyhydric alcohol have sp 3 hybrid orbitals.
  • Diamond is a tetrahedral structure with sp 3 hybrid orbitals, and when this carbon structure exists in a carbon compound, it functions as a crystal nucleus during synthesis. Therefore, in order to promote the growth of diamond more efficiently, it is preferable that the carbon compound contains a carbon structure with sp 3 hybrid orbitals, and it is preferable that it has branches. Furthermore, in addition to these, it is preferable that the carbon compound has a structure close to the tetrahedral structure of diamond. In addition to these, it is most preferable that the tetrahedral structure is formed with five carbon atoms. These may have hydroxyl groups at their ends, and are preferably polyhydric alcohols from the viewpoint of being released as desorbed gas when heated.
  • amorphous carbon and carbon compound in the present invention enables single crystal diamond having excellent durability to be synthesized at low cost, in high yield, and in a short time.
  • molten metal and graphite are used.
  • the graphite is decomposed by the molten metal to generate diamond.
  • amorphous carbon which is carbon that does not have a fixed crystal structure, has a random structure, so it is easier to convert the structure into diamond compared to those with a specific structure.
  • polyhydric alcohols examples include ethylene glycol, propylene glycol, diethylene glycol, trimethylene glycol, tetraethylene glycol, triethylene glycol, dipropylene glycol, 1,4-butanediol, 1,3-butanediol, 2,3-butanediol, 1,2-butanediol, 2-methyl-1,3-propanediol, 3-methyl-1,2-butanediol, 2-butyl-2-ethyl-1,3-propanediol, 1,2-pentanediol, 1,5-pentanediol, 1,4-pentanediol, 2,4-pentanediol, 2,3-dimethyltrimethylene glycol, tetramethylene glycol, and 3-methyl-4,3-pentanediol.
  • ethanol 3-methyl-1,5-pentanediol, 2,2,4-trimethyl-1,3-pentanediol, 1,6-hexanediol, 1,5-hexanediol, 1,4-hexanediol, 2,5-hexanediol, neopentyl glycol, 1,4-cyclohexanedimethanol, tricyclodecane dimethanol, hydroxypivalic acid neopentyl glycol ester, glycerin, trimethylolethane, trimethylolpropane, diglycerin, xylitol, triglycerin, 1,2,6-hexanetriol, pentaerythritol, dipentaerythritol, tris(2-hydroxyethyl)isocyanuric acid, sorbitol, perseitol, sucrose, etc.
  • trihydric alcohols include glycerin and trimethylolpropane.
  • Tetrahydric alcohols include pentaerythritol and diglycerin.
  • Pentahydric alcohols include xylitol.
  • Hexahydric alcohols include sorbitol.
  • Heptahydric alcohols include perseitol.
  • Octahydric alcohols include sucrose. Of these, tetrahydric alcohols are preferred, with pentaerythritol being the most preferred.
  • the carbon compounds may be one type or a mixture of two or more types.
  • the carbon compound may contain unavoidable impurities. Even if the carbon compound contains unavoidable impurities, the above-mentioned effects are not affected.
  • the combination of amorphous carbon and carbon compound is preferably such that the amorphous carbon is carbon black, and the carbon compound is a polyhydric alcohol having sp3 hybrid orbital and tetrahedral structure, and most preferably a combination of carbon black and pentaerythritol.
  • the carbon compound is a polyhydric alcohol having sp3 hybrid orbital and tetrahedral structure, and most preferably a combination of carbon black and pentaerythritol.
  • the starting materials are mixed.
  • a general mixing method can be used. For example, the starting materials are put into a powder mixer and mixed for about 1 to 30 minutes under atmospheric pressure or reduced pressure. This produces a mixed powder of 100 ⁇ m or less.
  • the mixed powder prepared as described above can be used to produce diamond abrasive grains under the same conditions as for raw materials using metal catalysts.
  • Ib type diamond grains synthesized by HPHT are prepared as follows.
  • Raw materials are graphite with arithmetic mean particle diameter of 30 ⁇ m and FeNiCo alloy with arithmetic mean particle diameter of 30 ⁇ m as catalytic metal, and 50 g of graphite and 50 g of FeNiCo alloy powder are weighed and put into powder mixer to obtain mixed powder.
  • Diamond synthesis was carried out in a "toroid" type high pressure chamber.
  • the applied pressure was calibrated using the approximate curve of the phase transition of Bi, Tl and Ba at room temperature, which is commonly used in the HPHT method, and was taken as the pressure indicated by the hydraulic gauge.
  • the heating temperature was calibrated with the input power and temperature using a thermocouple, and was taken as the temperature calculated from the input power.
  • the raw material was heated by a direct heating method in which an electric current was passed through a graphite heater. Using this equipment configuration, the mixed powder was exposed to HPHT in the air at a temperature of 1250°C and a pressure of 5.5 MPa.
  • the sample synthesized by the high-temperature high-pressure method is mixed with the pressure medium at the completion of decompression, so the pressure medium particles are first removed with a sieve and then washed with deionized water.
  • the powder is placed in a liquid of bromoform ( CHBg3 ) to separate the carbon black and diamond particles.
  • the diamond particles are filtered and washed with deionized water to obtain diamond particles.
  • the diamond particles thus produced were subjected to elutriation.
  • the average particle size of the resulting diamond particles was 30 ⁇ m in arithmetic mean particle size.
  • the average particle size of the resulting diamond particles was measured using a laser diffraction scattering type particle size distribution measuring device (e.g., model: Mastersizer 2000, manufactured by Malvern Instruments) with the volume average particle size D50 as the average particle size.
  • the obtained abrasive grains were then irradiated with an electron beam.
  • the electron irradiation was carried out for 2 hours at 4.5 MeV, 20 mA, and a scanning width of 50% using an apparatus manufactured by Isotron plc.
  • the total dose received by the sample was 1.95 ⁇ 10 18 e - /cm 2.
  • annealing was carried out in air under the conditions shown in Table 1 to obtain single crystal diamond abrasive grains.
  • the fact that the diamond abrasive grains were single crystals was confirmed by TEM images.
  • the obtained diamond abrasive grains were subjected to Raman spectroscopy measurement.
  • the Raman spectroscopy measurement was performed using a Raman spectroscopic analyzer (manufactured by WITECH Corporation, device name: Laser Raman spectroscopic analyzer, model number alpha300R), and each diamond abrasive grain was measured as shown in Figure 1.
  • Fig. 1 shows the results of mapping measurements obtained by irradiating a 785 nm laser by Raman spectroscopy on diamonds made under various conditions.
  • IIa is natural diamond
  • Ib As Received
  • XP is Ib (As Received) irradiated with an electron beam
  • XP-AN500 is XP annealed at 500°C
  • XP-AN650 is XP annealed at 650°C
  • XP-AN800 is XP annealed at 800°C
  • XP-AN950 is XP annealed at 950°C
  • XP-AN1100 is XP annealed at 1100°C.
  • Fig. 1 shows the results of mapping measurements obtained by irradiating a 785 nm laser by Raman spectroscopy on diamonds made under various conditions.
  • IIa is natural diamond
  • Ib As Received
  • XP is Ib (As Received)
  • the average wave number distribution for each sample is shown in Table 1.
  • the arithmetic mean particle size of the diamond abrasive grains is 30 ⁇ m.
  • FIG. 2 is a schematic cross-sectional view for explaining the outline of the process of forming a protective layer (nickel plating layer) on the hub blade.
  • the base 4 and nickel electrode 6 were immersed in the nickel plating solution in the plating bath 2.
  • the base 4 was made of aluminum metal material and had a disk shape (ring shape), and a mask 4a corresponding to the shape of the grindstone described below was provided on its surface. As shown in Figure 2, a mask 4a was used that exposed part of the surface of the base 4 at the outer periphery.
  • the base 4 was connected to the negative terminal (negative electrode) of the DC power supply 10 via the switch 8. Meanwhile, the copper-nickel electrode 6 was connected to the positive terminal (positive electrode) of the DC power supply 10.
  • a direct current was passed through the nickel plating solution with the base 4 as the cathode and the nickel electrode 6 as the anode, forming a nickel plating layer on the surface of the base 4 not covered by the mask 4a.
  • a switch 8 arranged between the base 4 and the DC power source 10 was short-circuited while the nickel plating solution was stirred by rotating a fan 14 with a rotary drive source 12 such as a motor.
  • a nickel plating layer which is a protective layer 16, was formed in the area of the base 4 not covered by the mask 4a, and the abrasive grains and the nickel plating layer were layered on the protective layer 16, forming a grinding wheel in which the abrasive grains are roughly evenly distributed in the nickel plating layer.
  • the nickel plating solution is an electrolyte in which materials containing nickel (ions), such as nickel sulfate or nickel nitrate, are dissolved, and the diamond abrasive grains shown in Table 1 were mixed into the volume of nickel plating solution B.
  • Nickel plating solution A is nickel plating solution B (Watts bath) containing 270 g/L of nickel sulfate, 45 g/L of nickel chloride, and 40 g/L of boric acid, and 6 L was used in this example.
  • Figure 3 is a schematic cross-sectional view of a hub blade
  • Figure 3(A) is a schematic cross-sectional view showing the state of the base 4 after the grindstone has been formed
  • Figure 3(B) is a schematic cross-sectional view showing an enlarged view of the outer periphery of the base 4 shown in Figure 3(A).
  • a grindstone 36 of the desired thickness is formed, overlapping the protective layer 16, and the formation of the grindstone is completed.
  • Figure 4 is a schematic cross-sectional view of a hub blade
  • Figure 4(A) is a cross-sectional view showing the state of the base 4 after the base has been removed
  • Figure 4(B) is an enlarged cross-sectional view of the outer periphery of the base 4 shown in Figure 4(A).
  • the mask 4a used in the process of forming the grindstone was removed before carrying out the base removal process.
  • a protective layer 16 is provided between the base 4 and the grindstone 36, so even if the above-mentioned chemical solution passes through the nickel plating layer (grindstone 36), the base 4 is not removed by the passing chemical solution.
  • Figure 5 is a schematic cross-sectional view of a hub blade
  • Figure 5(A) is a schematic cross-sectional view showing the state of the base 4 after the protective layer has been removed
  • Figure 5(B) is a schematic cross-sectional view showing an enlarged view of the outer periphery of the base 4 shown in Figure 5(A).
  • FIG. 6 is a perspective view showing a schematic of the completed electroplated grinding wheel.
  • a hub-type electroplated grinding wheel 1 is completed, in which an annular grinding wheel portion 36 is fixed to the outer periphery of a disk-shaped base 4.
  • FIG 7 is a diagram showing the relationship between the cut length and wear amount when a silicon substrate is cut with a cutting wheel using diamond abrasive grains of Ib type synthetic diamond (As-Received), diamond after electron beam irradiation (XP), and diamond annealed at 650 ° C after electron beam irradiation (XP-Anneal).
  • Figure 8 is a graph showing the cutting life of the hub blade using the three types of diamond shown in Figure 7. Note that Figure 9 shows the ratio (%) of each blade wear amount when As-Received is taken as 100% in the blade wear amount after cutting 100,000 mm in Figure 8.
  • the XP and XP-AN of this embodiment both have about 70% less blade wear amount than As-Received, and have a longer cutting life.
  • Figure 9 is a perspective view of a grinding device equipped with a grinding wheel using abrasive grains. Note that the X-axis direction in this figure is the width direction of the grinding device 100, the Y-axis direction is the depth direction of the grinding device 100, and the Z-axis direction is the vertical direction.
  • the grinding device 100 includes a first cassette 111 and a second cassette 112 that store a plurality of wafers W as workpieces, a common loading/unloading means 113 that serves both as a loading means for loading the wafers W from the first cassette 111 and a loading means for loading the ground wafers W into the second cassette 112, an alignment means 114 for aligning the center of the wafers W, a transport means 115, 116 for transporting the wafers W, three chuck tables 117-119 that suction-hold the wafers W, a turntable 120 that rotatably supports and rotates each of the chuck tables 117-119, grinding means 30, 40 that are processing means that perform a grinding process as processing on the wafers W held on each of the chuck tables 117-119, a cleaning means 151 that cleans the wafers W after grinding, and a cleaning means 152 that cleans the chuck tables 117-119 after grinding.
  • the wafer W stored in the first cassette 111 is transported to the alignment means 114 by the transport operation of the transport means 113, where it is centered and then transported and placed on one of the chuck tables 117-119 by the transport means 115. In the figure, it is transported and placed on the chuck table 117.
  • the three chuck tables 117-119 are arranged at equal intervals in the circumferential direction of the turntable 120, and each is rotatable and moves on the XY plane as the turntable 120 rotates.
  • the chuck tables 117-119 are arranged directly below the grinding means 130 by rotating a predetermined angle, for example, 120 degrees counterclockwise, while holding the wafer W by suction.
  • the grinding means 130 grinds the wafer W held on the chuck tables 117-119, and is provided on a wall 122 erected at the end of the base 121 in the Y-axis direction.
  • the grinding means 130 is guided by a pair of guide rails 131 arranged in the Z-axis direction on the wall 122, and is supported by a support 133 that moves up and down driven by a motor 132, and is configured to move up and down in the Z-axis direction with the up and down movement of the support 133.
  • the grinding means 130 includes a motor 134 that rotates a rotatably supported spindle 134a, and a grinding wheel 136 that is attached to the tip of the spindle 134a via a wheel mount 135 and grinds the back surface of the wafer W.
  • the grinding wheel 136 includes a grinding stone 137 for rough grinding that is fixed to the underside of the grinding wheel 136 in an annular shape.
  • the rough grinding was performed as follows.
  • the grinding wheel 136 was rotated by the rotation of the spindle 134a by the motor 134, and was fed downward in the Z-axis direction for grinding, so that the rotating grinding stone 137 came into contact with the back surface of the wafer W, thereby grinding the back surface of the wafer W held on the chuck table 117 and positioned directly below the grinding means 130.
  • the turntable 120 rotated counterclockwise by a predetermined angle, and the roughly ground wafer W was positioned directly below the grinding means 140.
  • the grinding means 140 grinds the wafer W held on the chuck tables 117-119, is guided by a pair of guide rails 141 arranged in the Z-axis direction on the wall 122, is supported by a support part 143 that moves up and down by driving a motor 142, and is configured to move up and down in the Z-axis direction with the up and down movement of the support part 143.
  • the grinding means 140 includes a motor 144 that rotates a rotatably supported spindle 144a, and a grinding wheel 146 that is attached to the tip of the spindle 144a via a wheel mount 145 and grinds the back surface of the wafer W.
  • the grinding wheel 146 includes a grinding wheel 147 for finish grinding that is fixed to the bottom surface of the grinding wheel 146 in an annular shape.
  • the grinding means 140 has the same basic configuration as the grinding means 130, and is configured differently only in the types of grinding wheels 137, 147.
  • Finish grinding was performed as follows.
  • the grinding wheel 146 was rotated by the rotation of the spindle 144a by the motor 144, and was fed downward in the Z-axis direction for grinding, so that the rotating grinding stone 147 came into contact with the back surface of the wafer W, thereby grinding the back surface of the wafer W held by the chuck table 117 and positioned directly below the grinding means 140.
  • the turntable 120 rotated a predetermined angle in the counterclockwise direction to return to the initial position shown in FIG. 11.
  • the wafer W whose back surface had been finish ground was transported by the transport means 116 to the cleaning means 151, and after the grinding debris was removed by cleaning, it was transported into the second cassette 112 by the transport operation of the transport means 113.
  • the cleaning means 152 washed the chuck table 117, which had been left empty after the finish-ground wafer W was picked up by the transport means 116, with pure water.
  • rough grinding, finish grinding, and loading/unloading of wafers W held on the other chuck tables 118 and 119 were also performed in the same manner according to the rotational position of the turntable 120.
  • the grinding wheels 137 and 147 contain diamond abrasive grains.
  • the grinding wheels 137 and 147 are made by mixing diamond abrasive grains with vitrified.
  • a silicon wafer is used as the workpiece W, and the average grain size of the diamond abrasive grains used in the grinding wheel 137 is 30 ⁇ m.
  • FIG. 10 is a graph showing the surface roughness of the ground surface ground using the grinding wheel using the three types of diamond abrasive grains shown in FIG. 7. As shown in FIG. 10, the results showed that the surface roughness of both XP and XP-AN in this embodiment was smaller than that of As. Among the examples, it was found that the surface roughness of XP-AN was superior to that of XP in the grinding wheel.
  • the raw material of diamond particles was changed as follows. Carbon black powder with an arithmetic mean particle size of 40 nm (product name: Tokai Carbon Co., Ltd., Toka Black #4500) and charcoal with an arithmetic mean particle size of 20 to 40 nm were used as amorphous carbon, and pentaerythritol (Tokyo Chemical Industry Co., Ltd., product code (P0039)) and xylitol (Tokyo Chemical Industry Co., Ltd., product code (X0018)) were weighed as shown in Table 2, and the pressure, temperature, and processing time were set to the conditions in Table 1, and the mixture was put into a powder mixer to obtain a mixed powder. Other than this, diamond abrasive grains were manufactured in the same manner as above and evaluated in the same manner. As a result, in all of samples 1 to 6 in Table 2, results equal to or better than the above results were obtained.

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JP2022062809A (ja) * 2020-10-09 2022-04-21 株式会社ディスコ ウェーハの製造方法
JP7033824B1 (ja) * 2021-06-28 2022-03-11 株式会社ディスコ 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド

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