JP7479577B1 - 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 - Google Patents

半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 Download PDF

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JP7479577B1
JP7479577B1 JP2023562166A JP2023562166A JP7479577B1 JP 7479577 B1 JP7479577 B1 JP 7479577B1 JP 2023562166 A JP2023562166 A JP 2023562166A JP 2023562166 A JP2023562166 A JP 2023562166A JP 7479577 B1 JP7479577 B1 JP 7479577B1
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Prior art keywords
diamond
abrasive grains
semiconductor
grinding
grindstone
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Japanese (ja)
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JPWO2024127679A5 (https=
JPWO2024127679A1 (https=
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龍司 大島
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Disco Corp
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dicing (AREA)
JP2023562166A 2022-12-17 2022-12-17 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 Active JP7479577B1 (ja)

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JP2023174864A JP7496026B1 (ja) 2022-12-17 2023-10-07 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法

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PCT/JP2022/046559 WO2024127679A1 (ja) 2022-12-17 2022-12-17 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法

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JPWO2024127679A5 JPWO2024127679A5 (https=) 2024-11-13

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JP2023174864A Active JP7496026B1 (ja) 2022-12-17 2023-10-07 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法

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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02385A (ja) * 1987-01-12 1990-01-05 Sumitomo Electric Ind Ltd ダイヤモンド発光素子およびその製造方法
JPH1171197A (ja) * 1997-08-13 1999-03-16 General Electric Co <Ge> 表面強化ダイヤモンド及びその製造方法
JP2005272191A (ja) * 2004-03-24 2005-10-06 Sumitomo Electric Ind Ltd ダイヤモンド単結晶基板
JP2013028492A (ja) * 2011-07-28 2013-02-07 Sumitomo Electric Ind Ltd 半導体多結晶ダイヤモンドおよびその製造方法
JP5554449B2 (ja) * 2010-06-03 2014-07-23 エレメント シックス リミテッド ダイヤモンド工具
JP2015505810A (ja) * 2011-12-16 2015-02-26 エレメント シックス テクノロジーズ リミテッド 単結晶ｃｖｄ合成ダイヤモンド材料
JP2018501176A (ja) * 2014-11-06 2018-01-18 ツーシックス、インコーポレイテッドＩｉ−Ｖｉ Ｉｎｃｏｒｐｏｒａｔｅｄ 高双晶化配向多結晶ダイヤモンド膜及びその製造方法
WO2019077844A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド
JP2022018650A (ja) * 2020-07-16 2022-01-27 株式会社ディスコ 被加工物の研削方法
JP7033824B1 (ja) * 2021-06-28 2022-03-11 株式会社ディスコ 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド
JP2022062809A (ja) * 2020-10-09 2022-04-21 株式会社ディスコ ウェーハの製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02385A (ja) * 1987-01-12 1990-01-05 Sumitomo Electric Ind Ltd ダイヤモンド発光素子およびその製造方法
JPH1171197A (ja) * 1997-08-13 1999-03-16 General Electric Co <Ge> 表面強化ダイヤモンド及びその製造方法
JP2005272191A (ja) * 2004-03-24 2005-10-06 Sumitomo Electric Ind Ltd ダイヤモンド単結晶基板
JP5554449B2 (ja) * 2010-06-03 2014-07-23 エレメント シックス リミテッド ダイヤモンド工具
JP2013028492A (ja) * 2011-07-28 2013-02-07 Sumitomo Electric Ind Ltd 半導体多結晶ダイヤモンドおよびその製造方法
JP2015505810A (ja) * 2011-12-16 2015-02-26 エレメント シックス テクノロジーズ リミテッド 単結晶ｃｖｄ合成ダイヤモンド材料
JP2018501176A (ja) * 2014-11-06 2018-01-18 ツーシックス、インコーポレイテッドＩｉ−Ｖｉ Ｉｎｃｏｒｐｏｒａｔｅｄ 高双晶化配向多結晶ダイヤモンド膜及びその製造方法
WO2019077844A1 (ja) * 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド
JP2022018650A (ja) * 2020-07-16 2022-01-27 株式会社ディスコ 被加工物の研削方法
JP2022062809A (ja) * 2020-10-09 2022-04-21 株式会社ディスコ ウェーハの製造方法
JP7033824B1 (ja) * 2021-06-28 2022-03-11 株式会社ディスコ 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド

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WO2024127679A1 (ja) 2024-06-20
JP2024086569A (ja) 2024-06-27
JPWO2024127679A1 (https=) 2024-06-20
TWI879305B (zh) 2025-04-01
TW202440277A (zh) 2024-10-16
JP7496026B1 (ja) 2024-06-05

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