TWI879305B - 半導體構件加工磨石、半導體構件加工工具、半導體製造裝置及半導體構件加工磨石之製造方法 - Google Patents

半導體構件加工磨石、半導體構件加工工具、半導體製造裝置及半導體構件加工磨石之製造方法 Download PDF

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Publication number
TWI879305B
TWI879305B TW112148498A TW112148498A TWI879305B TW I879305 B TWI879305 B TW I879305B TW 112148498 A TW112148498 A TW 112148498A TW 112148498 A TW112148498 A TW 112148498A TW I879305 B TWI879305 B TW I879305B
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TW
Taiwan
Prior art keywords
semiconductor component
component processing
grindstone
diamond
abrasive grains
Prior art date
Application number
TW112148498A
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English (en)
Chinese (zh)
Other versions
TW202440277A (zh
Inventor
大島龍司
Original Assignee
日商迪思科股份有限公司
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Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202440277A publication Critical patent/TW202440277A/zh
Application granted granted Critical
Publication of TWI879305B publication Critical patent/TWI879305B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dicing (AREA)
TW112148498A 2022-12-17 2023-12-13 半導體構件加工磨石、半導體構件加工工具、半導體製造裝置及半導體構件加工磨石之製造方法 TWI879305B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2022/046559 WO2024127679A1 (ja) 2022-12-17 2022-12-17 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法
WOPCT/JP2022/046559 2022-12-17

Publications (2)

Publication Number Publication Date
TW202440277A TW202440277A (zh) 2024-10-16
TWI879305B true TWI879305B (zh) 2025-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW112148498A TWI879305B (zh) 2022-12-17 2023-12-13 半導體構件加工磨石、半導體構件加工工具、半導體製造裝置及半導體構件加工磨石之製造方法

Country Status (3)

Country Link
JP (2) JP7479577B1 (https=)
TW (1) TWI879305B (https=)
WO (1) WO2024127679A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103038165A (zh) * 2010-06-03 2013-04-10 六号元素有限公司 金刚石工具
CN111247276A (zh) * 2017-10-20 2020-06-05 住友电气工业株式会社 合成单晶金刚石
CN113941934A (zh) * 2020-07-16 2022-01-18 株式会社迪思科 被加工物的磨削方法
JP7033824B1 (ja) * 2021-06-28 2022-03-11 株式会社ディスコ 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02385A (ja) * 1987-01-12 1990-01-05 Sumitomo Electric Ind Ltd ダイヤモンド発光素子およびその製造方法
JPH1171197A (ja) * 1997-08-13 1999-03-16 General Electric Co <Ge> 表面強化ダイヤモンド及びその製造方法
JP4736338B2 (ja) * 2004-03-24 2011-07-27 住友電気工業株式会社 ダイヤモンド単結晶基板
JP5831015B2 (ja) * 2011-07-28 2015-12-09 住友電気工業株式会社 半導体多結晶ダイヤモンドおよびその製造方法
GB201121642D0 (en) * 2011-12-16 2012-01-25 Element Six Ltd Single crtstal cvd synthetic diamond material
US10373725B2 (en) * 2014-11-06 2019-08-06 Ii-Vi Incorporated Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof
JP2022062809A (ja) * 2020-10-09 2022-04-21 株式会社ディスコ ウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103038165A (zh) * 2010-06-03 2013-04-10 六号元素有限公司 金刚石工具
CN111247276A (zh) * 2017-10-20 2020-06-05 住友电气工业株式会社 合成单晶金刚石
CN113941934A (zh) * 2020-07-16 2022-01-18 株式会社迪思科 被加工物的磨削方法
JP7033824B1 (ja) * 2021-06-28 2022-03-11 株式会社ディスコ 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド

Also Published As

Publication number Publication date
WO2024127679A1 (ja) 2024-06-20
JP2024086569A (ja) 2024-06-27
JPWO2024127679A1 (https=) 2024-06-20
TW202440277A (zh) 2024-10-16
JP7479577B1 (ja) 2024-05-08
JP7496026B1 (ja) 2024-06-05

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