JPWO2024127679A1 - - Google Patents
Info
- Publication number
- JPWO2024127679A1 JPWO2024127679A1 JP2023562166A JP2023562166A JPWO2024127679A1 JP WO2024127679 A1 JPWO2024127679 A1 JP WO2024127679A1 JP 2023562166 A JP2023562166 A JP 2023562166A JP 2023562166 A JP2023562166 A JP 2023562166A JP WO2024127679 A1 JPWO2024127679 A1 JP WO2024127679A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Thermal Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Dicing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023174864A JP7496026B1 (ja) | 2022-12-17 | 2023-10-07 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/046559 WO2024127679A1 (ja) | 2022-12-17 | 2022-12-17 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023174864A Division JP7496026B1 (ja) | 2022-12-17 | 2023-10-07 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7479577B1 JP7479577B1 (ja) | 2024-05-08 |
| JPWO2024127679A1 true JPWO2024127679A1 (https=) | 2024-06-20 |
| JPWO2024127679A5 JPWO2024127679A5 (https=) | 2024-11-13 |
Family
ID=90926144
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023562166A Active JP7479577B1 (ja) | 2022-12-17 | 2022-12-17 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
| JP2023174864A Active JP7496026B1 (ja) | 2022-12-17 | 2023-10-07 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023174864A Active JP7496026B1 (ja) | 2022-12-17 | 2023-10-07 | 半導体部材加工砥石、半導体部材加工工具、半導体製造装置、および半導体部材加工砥石の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP7479577B1 (https=) |
| TW (1) | TWI879305B (https=) |
| WO (1) | WO2024127679A1 (https=) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02385A (ja) * | 1987-01-12 | 1990-01-05 | Sumitomo Electric Ind Ltd | ダイヤモンド発光素子およびその製造方法 |
| JPH1171197A (ja) * | 1997-08-13 | 1999-03-16 | General Electric Co <Ge> | 表面強化ダイヤモンド及びその製造方法 |
| JP4736338B2 (ja) * | 2004-03-24 | 2011-07-27 | 住友電気工業株式会社 | ダイヤモンド単結晶基板 |
| WO2011151414A2 (en) * | 2010-06-03 | 2011-12-08 | Element Six Limited | Diamond tools |
| JP5831015B2 (ja) * | 2011-07-28 | 2015-12-09 | 住友電気工業株式会社 | 半導体多結晶ダイヤモンドおよびその製造方法 |
| GB201121642D0 (en) * | 2011-12-16 | 2012-01-25 | Element Six Ltd | Single crtstal cvd synthetic diamond material |
| US10373725B2 (en) * | 2014-11-06 | 2019-08-06 | Ii-Vi Incorporated | Highly twinned, oriented polycrystalline diamond film and method of manufacture thereof |
| EP3699330A4 (en) * | 2017-10-20 | 2021-06-30 | Sumitomo Electric Industries, Ltd. | SYNTHETIC SINGLE CRYSTAL DIAMOND |
| JP7497117B2 (ja) * | 2020-07-16 | 2024-06-10 | 株式会社ディスコ | 被加工物の研削方法 |
| JP2022062809A (ja) * | 2020-10-09 | 2022-04-21 | 株式会社ディスコ | ウェーハの製造方法 |
| JP7033824B1 (ja) * | 2021-06-28 | 2022-03-11 | 株式会社ディスコ | 単結晶ダイヤモンドの製造方法および単結晶ダイヤモンド |
-
2022
- 2022-12-17 JP JP2023562166A patent/JP7479577B1/ja active Active
- 2022-12-17 WO PCT/JP2022/046559 patent/WO2024127679A1/ja not_active Ceased
-
2023
- 2023-10-07 JP JP2023174864A patent/JP7496026B1/ja active Active
- 2023-12-13 TW TW112148498A patent/TWI879305B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024127679A1 (ja) | 2024-06-20 |
| JP2024086569A (ja) | 2024-06-27 |
| TWI879305B (zh) | 2025-04-01 |
| TW202440277A (zh) | 2024-10-16 |
| JP7479577B1 (ja) | 2024-05-08 |
| JP7496026B1 (ja) | 2024-06-05 |
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