WO2024103552A1 - 有机电致发光器件及显示装置 - Google Patents

有机电致发光器件及显示装置 Download PDF

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WO2024103552A1
WO2024103552A1 PCT/CN2023/077228 CN2023077228W WO2024103552A1 WO 2024103552 A1 WO2024103552 A1 WO 2024103552A1 CN 2023077228 W CN2023077228 W CN 2023077228W WO 2024103552 A1 WO2024103552 A1 WO 2024103552A1
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layer
light
organic electroluminescent
electroluminescent device
phosphorescence
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PCT/CN2023/077228
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English (en)
French (fr)
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李国孟
段炼
李宝雨
蔡明瀚
刘彬
李梦真
王宏宇
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昆山国显光电有限公司
清华大学
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Publication of WO2024103552A1 publication Critical patent/WO2024103552A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants

Definitions

  • the present application relates to an organic electroluminescent device and a display apparatus, belonging to the technical field of organic electroluminescent.
  • OLED Organic Light Emitting Diode
  • the light-emitting layer is mainly composed of a host material and a phosphorescent material. Due to the structural characteristics of the phosphorescent material (such as long-wavelength 3 MLCT absorption and its own long transient life, etc.), it is easy to cause problems such as low device efficiency and short life.
  • the present application provides an organic electroluminescent device and a display apparatus, which can improve the efficiency and life of the device and other performances, and effectively overcome the defects of the prior art.
  • an organic electroluminescent device comprising at least one light-emitting layer, wherein the at least one light-emitting layer comprises at least one phosphorescence sensitization layer, wherein the phosphorescence sensitization layer comprises a host material, a phosphorescence sensitizer and a narrow-spectrum fluorescent material, wherein the half-peak width of the narrow-spectrum fluorescent material is less than 45 nm.
  • Another aspect of the present application provides a display device, comprising the above-mentioned organic electroluminescent device.
  • At least one light-emitting layer of the organic electroluminescent device is a phosphorescence sensitized layer (that is, it includes at least one phosphorescence sensitized layer).
  • the composition system of the phosphorescence sensitized layer includes a host material, a phosphorescence sensitizer and a narrow-spectrum fluorescent material.
  • the half-width (FWHM) of the introduced narrow-spectrum fluorescent material is less than 45nm.
  • FIG1 is a schematic structural diagram of an organic electroluminescent device according to an embodiment of the present application.
  • FIG2 is a schematic structural diagram of an organic electroluminescent device according to another embodiment of the present application.
  • the light-emitting layer materials generally have defects such as low device efficiency and short life, especially the stacked devices, which usually have at least two light-emitting layers, and the light-emitting layers are mainly composed of a main material and a phosphorescent material (or phosphorescent dye).
  • the light-emitting layers basically adopt a composition system of a main material and a red phosphorescent dye. Under such a composition system, due to the structural characteristics of the phosphorescent material (such as long-wavelength 3 MLCT absorption and its own long transient life, etc.), there are often problems such as a wide emission peak width, and the resulting low device efficiency and short life.
  • an embodiment of the present application provides an organic electroluminescent device, as shown in Figures 1 and 2, the organic electroluminescent device includes at least one light-emitting layer, and at least one light-emitting layer includes at least one phosphorescence sensitization layer, the phosphorescence sensitization layer includes a main material, a phosphorescence sensitizer and a narrow-spectrum fluorescent material, and the half-peak width of the narrow-spectrum fluorescent material is less than 45nm.
  • the above-mentioned organic electroluminescent device includes at least one phosphorescence sensitization layer, and the composition system of the phosphorescence sensitization layer includes a main material, a phosphorescence sensitizer and a narrow-spectrum fluorescent material.
  • the half-width (FWHM) of the introduced narrow-spectrum fluorescent material is less than 45nm.
  • the luminescence peak of the narrow spectrum fluorescent material may be 550nm-680nm, such as 550nm, 580nm, 590nm, 600nm, 610nm, 620nm, 630nm, 640nm, 650nm, 660nm, 670nm, 680nm, etc.
  • the luminescence peak of the narrow spectrum fluorescent material is 590-650nm, and its luminescence spectrum is red light, which can make the organic electroluminescent device of the embodiment of the present application generate red light.
  • the efficiency and life of the red light device can be improved.
  • the narrow spectrum fluorescent material can be selected from fluorescent materials with a double boron resonance structure and a FWHM of less than 45 nm.
  • the narrow spectrum fluorescent material includes one or more compounds having structures shown in the following formulas V-1, V-2, and V-3:
  • R 1 , R 2 , R 3 , R 4 , R 3X , and R 4X each independently represent a monosubstituted to maximum permitted substituent, and R 1 and R 2 each independently represent any one selected from substituted or unsubstituted C1-C20 straight or branched alkyl, substituted or unsubstituted C3-C20 cycloalkyl, and substituted or unsubstituted C1-C20 alkylsilyl; R 3 , R 4 , R 3X , and R 4X each independently represent any one selected from substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; or, R 1 and R 2 each independently represent any one selected from substituted or unsubstituted C6-C60 aryl, and substituted or unsubstituted C3-C60 heteroaryl; R 3 , R 4 , R 3X , and R 4X each independently represent
  • R 1 , R 2 , R 3 , R 4 , R 3X , and R 4X have substituents (i.e., the above-mentioned groups are substituted), the substituents are each independently selected from at least one of halogen, C1-C20 straight or branched alkyl, C3-C20 cycloalkyl, nitro, cyano, amino, hydroxyl, C1-C20 alkylsilyl, C6-C60 aryl, or C3-C60 heteroaryl, and are more preferably any one or a combination of at least two of C1-C20 straight or branched alkyl, C3-C20 cycloalkyl, C1-C20 alkylsilyl, C6-C60 aryl, or C3-C60 heteroaryl; R 1 , R 2 , R 3 , R 4 , R 3X , and R 4X are each independently not connected to adjacent benzene ring structures or are connected to form
  • the above-mentioned compounds having structures shown in Formula V-1, Formula V-2, and Formula V-3 have a double boron resonance structure.
  • a higher luminescence efficiency can be achieved based on triplet excitons. It has excellent carrier transfer efficiency, and its emission spectrum is red light, and the luminescence spectrum is narrow, FWHM ⁇ 45nm, which can effectively adjust and improve the light color, and improve the light color, light purity, luminescence efficiency and life of the device.
  • part of the peripheral groups are aromatic groups (i.e., the above-mentioned aromatic groups or heteroaromatic groups), and part of them are non-aromatic groups (i.e., the above-mentioned straight-chain or branched alkyl, cycloalkyl, alkylsilyl groups), so that the molecular structure is asymmetric and the light color can be adjusted so that the light color of the compound reaches above 620nm; moreover, the introduction of peripheral groups makes the carrier mobility higher, which is beneficial to reducing the voltage, and forms more effective protection for the parent nucleus, inhibiting exciton quenching, thereby improving efficiency and life.
  • aromatic groups i.e., the above-mentioned aromatic groups or heteroaromatic groups
  • non-aromatic groups i.e., the above-mentioned straight-chain or branched alkyl, cycloalkyl, alkylsilyl groups
  • hydrogen (H) includes 1 H (protium), 2 H (deuterium, D), 3 H (tritium, T), etc.
  • carbon (C) includes 12 C, 13 C, etc.
  • the heteroatom of the heteroaryl group is selected from atoms or atomic groups of N, O, S, P, B, Si or Se, preferably N, O or S.
  • the halogen may be fluorine, chlorine, bromine or iodine.
  • the expression of a ring structure crossed by “—” indicates that the connection site between the ring structure and the substituent is any position on the ring structure that can form a bond.
  • the above-mentioned “substituted or unsubstituted” group may be substituted with one substituent or with multiple substituents. When there are multiple substituents (at least 2), they may be the same or different substituents.
  • the number of R 1 , R 2 , R 3 , R 4 , R 3X , R 4X can be 1, 2, 3 or 4, etc.; when there are multiple ( ⁇ 2) substituents of R 1 , R 2 , R 3 , R 4 , R 3X , R 4X , the multiple ( ⁇ 2) substituents are the same or different groups.
  • the expression of Ca to Cb represents that the number of carbon atoms in the group is a to b. Unless otherwise specified, the number of carbon atoms does not include the number of carbon atoms in the substituent.
  • the above C1 to C20 can be C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18 or C20;
  • C3 to C20 can be C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C19 or C20;
  • C3 to C60 can be C3, C4, C5, C6, C9, C10, C12, C14, C16, C18, C20, C22, C24, C26, C28, C30, C32, C34, C36, C38, C40, C42, C44, C46, C48, C
  • the C1-C20 straight or branched alkyl group is selected from methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, tert-butyl, 2-methylbutyl, n-pentyl, isopentyl, neopentyl, n-hexyl, neohexyl, 2-ethylhexyl, n-octyl, n-heptyl, n-nonyl, n-decyl, etc., but is not limited thereto.
  • the substituted or unsubstituted C1-C20 straight chain or branched alkyl group is selected from the following groups: methyl, ethyl, n-propyl, * represents the attachment site of the group.
  • the C3-C20 cycloalkyl group may include a monocycloalkyl group or a polycycloalkyl group, wherein the monocycloalkyl group refers to an alkyl group containing a single cyclic structure, and the polycycloalkyl group refers to a structure composed of two or more cycloalkyl groups by sharing one or more carbon atoms on the ring.
  • the C3-C20 cycloalkyl group is selected from cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, adamantyl, etc., but is not limited thereto.
  • C6-C60 aromatic groups include monocyclic aromatic groups and condensed aromatic groups, wherein the monocyclic aromatic group refers to a single phenyl group or a biphenyl group (i.e., the group contains at least one phenyl group, and when it contains at least two phenyl groups, the phenyl groups are connected by a single bond), for example, phenyl, biphenyl, terphenyl, etc.; condensed aromatic groups refer to groups containing at least two aromatic rings, and the aromatic rings are condensed to each other by sharing two adjacent carbon atoms, for example, naphthyl, anthracenyl, phenanthrenyl, indenyl, fluorenyl and its derivatives (9,9-dimethylfluorenyl, 9,9-diethylfluorenyl, 9,9-dipropylfluorenyl, 9,9-dibutylfluorenyl, 9,9-dipentylfluoreny
  • the substituted or unsubstituted C6-C60 aryl group is selected from one of the following groups: * represents the attachment site of the group.
  • C3-C60 heteroaryl includes monocyclic heteroaryl or condensed-ring heteroaryl, wherein the monocyclic heteroaryl refers to a single heteroaryl (aromatic heterocycle) or a single heteroaryl and another aromatic group (aryl or heteroaryl) connected by a single bond to form a biaromatic group, that is, the monocyclic heteroaryl contains at least one heteroaryl.
  • the molecule contains a heteroaryl and other aromatic groups, the heteroaryl and other aromatic groups are connected by a single bond.
  • the monocyclic heteroaryl includes pyridyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, furanyl, thienyl, pyrrolyl, etc.; condensed-ring heteroaryl includes thienyl, pyrrolyl, pyrimidinyl, pyrazinyl, pyridazinyl, triazinyl, furanyl, thienyl, pyrrolyl, etc.
  • group refers to a molecule containing at least one heteroaryl group and at least one aromatic group (heteroaryl or aryl), and the two share two adjacent atoms and are fused to each other, including, for example, quinolyl, isoquinolyl, quinoxalinyl, quinazolinyl, benzofuranyl, benzothiophenyl, isobenzofuranyl, isobenzothiophenyl, indolyl, dibenzofuranyl, dibenzothiophenyl, carbazolyl and its derivatives (N-phenylcarbazolyl, N-naphthylcarbazolyl, benzocarbazolyl, dibenzocarbazolyl, indolcarbazolyl, azacarbazolyl, etc.), acridinyl, phenothiazinyl, phenoxazinyl, hydroacridinyl, etc.
  • each independently means that when there are multiple subjects, they may be the same as or different from each other.
  • R 1 and R 2 may be the same group
  • R 3 and R 4 may be the same group
  • R 3X and R 4X may be the same group.
  • R1 and R2 can be independently connected to the para position or meta position of the carbon atom to which the O atom is connected.
  • R1 and R2 are independently connected to the meta position of the carbon atom to which the O atom is connected, which can further improve the performance of the device such as efficiency and life span.
  • R3 and R4 may be attached to the para position of the carbon atom to which the N atom is attached.
  • the narrow spectrum fluorescent material includes but is not limited to one or more of the following compounds A1 to A268:
  • the above-mentioned host material may include but is not limited to one or more of the following compounds PH-1 to PH-85:
  • the above-mentioned phosphorescent sensitizer includes but is not limited to one or more of the following compounds RPD-1 to RPD-29:
  • the mass content of the phosphorescence sensitizer is 0.1-50%, for example, 0.1%, 3%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50% and the like;
  • the mass content of the narrow spectrum fluorescent material is 0.1-30%, for example, 0.1%, 0.3%, 0.5%, 0.8%, 1%, 1.5%, 2%, 2.5%, 3%, 4%, 5%, 6%, 7%, 8%, 9%, 10%, 12%, 15%, 18%, 20%, 25%, 30%; the balance is the main material.
  • the mass content of the phosphorescence sensitizer is 0.1-15%, more preferably not more than 10%, for example 1-10%, which is beneficial to further improve the performance of the organic electroluminescent device such as efficiency and life span.
  • the mass content of the narrow spectrum fluorescent material is 0.1-5%, more preferably 0.5-2%, which is conducive to further improving the performance of the organic electroluminescent device such as efficiency and life span.
  • the organic electroluminescent device further comprises an anode, a hole transport region, an electron transport region and a cathode.
  • the electron transport region and the electron transport region are placed between the anode and the cathode.
  • the organic electroluminescent device may be a single-layer device (or single-light-emitting layer device), that is, it has a light-emitting layer, and the anode, hole transport region, light-emitting layer, electron transport region and cathode are stacked in sequence.
  • the above-mentioned organic electroluminescent device is a stacked device, which also includes a charge generation layer (Charge Generation Layer, CGL) arranged between the anode and the cathode, and the number of the light-emitting layers is at least two, and the at least two light-emitting layers are stacked (or stacked), specifically, they are stacked in sequence from the anode to the cathode, and the charge generation layer is arranged between two adjacent light-emitting layers (that is, a charge generation layer is provided between every two adjacent light-emitting layers).
  • CGL Charge Generation Layer
  • At least one light-emitting layer is a phosphorescence-sensitized layer containing the above-mentioned main material, phosphorescence sensitizer and narrow-spectrum fluorescent material
  • the remaining light-emitting layers can be the above-mentioned phosphorescence-sensitized layers, or the remaining light-emitting layers are phosphorescence layers including main materials and phosphorescent materials but not containing the above-mentioned narrow-spectrum fluorescent materials.
  • the main material in the phosphorescent layer may be the same as or different from the main material in the phosphorescence sensitization layer, and the phosphorescent material in the phosphorescent layer may be the same as or different from the phosphorescent sensitizer in the phosphorescence sensitization layer;
  • the main materials in different light-emitting layers may be the same or different, the phosphorescent sensitizers in different light-emitting layers may be the same or different, and the narrow-spectrum fluorescent materials in different light-emitting layers may be the same or different.
  • the above-mentioned organic electroluminescent device can be a red stacked device, that is, the above-mentioned light-emitting layer is a red light-emitting layer, that is, multiple (at least two) red light-emitting layers are stacked in sequence along the direction of the anode and the cathode, and at least one of them is the above-mentioned phosphorescence sensitization layer, which is specifically a red light phosphorescence sensitization light-emitting layer for emitting red light.
  • the hole transport region includes a first hole transport region arranged between the anode and the light-emitting layer closest to the anode (such as the first light-emitting layer described below), and a first electron transport region arranged between the cathode and the light-emitting layer closest to the cathode (such as the second light-emitting layer described below).
  • the charge generation layer includes an n-type charge generation layer (n-CGL) and a p-type charge generation layer (p-CGL), and in the adjacent n-type charge generation layer and p-type charge generation layer, the n-type charge generation layer is located on the side of the p-type charge generation layer away from the cathode, and the p-type charge generation layer is located on the side of the n-type charge generation layer away from the anode; the hole transport region also includes a second hole transport region, and the electron transport region also includes a second electron transport region.
  • n-CGL n-type charge generation layer
  • p-CGL p-type charge generation layer
  • the second electron transport region is arranged between the n-type charge generation layer and one light-emitting layer, and the second hole transport region is arranged between the p-type charge generation layer and another light-emitting layer.
  • the above-mentioned hole transport region may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).
  • HIL hole injection layer
  • HTL hole transport layer
  • EBL electron blocking layer
  • it may be a hole transport layer of a single-layer structure (including a single-layer hole transport layer containing only one compound or a single-layer hole transport layer containing multiple compounds), or it may be a multilayer structure including at least one layer of a hole injection layer (HIL), a hole transport layer (HTL), and an electron blocking layer (EBL).
  • the first hole transport region includes a hole injection layer, a hole transport layer, and an electron blocking layer, and the anode, the hole injection layer, the hole transport layer, the electron blocking layer, and the light-emitting layer closest to the anode are stacked in sequence.
  • the second hole transport region includes a hole transport layer and an electron blocking layer, and the p-type charge generating layer, the hole transport layer, the electron blocking layer, and the light emitting layer are sequentially stacked.
  • the electron transport region may include at least one of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL), for example, an electron transport layer of a single-layer structure (including a single-layer electron transport layer containing only one compound or a single-layer electron transport layer containing multiple compounds), or a single-layer structure containing
  • EIL electron injection layer
  • ETL electron transport layer
  • HBL hole blocking layer
  • the present invention has a multilayer structure including at least one layer of an electron injection layer (EIL), an electron transport layer (ETL), and a hole blocking layer (HBL).
  • the first electron transport region includes an electron injection layer, an electron transport layer, and a hole blocking layer, and the light-emitting layer closest to the cathode, the hole blocking layer, the electron transport layer, the electron injection layer, and the cathode are stacked in sequence.
  • the second electron transport region includes an electron transport layer and a hole blocking layer, and the light emitting layer, the hole blocking layer, the electron transport layer, and the n-type charge generating layer are stacked in sequence.
  • the above-mentioned organic electroluminescent device is a single-layer device, which includes an anode 10, a first hole injection layer 11, a first hole transport layer 21, a first electron blocking layer 31, a first light-emitting layer 41, a first hole blocking layer 51, a first electron transport layer 61, a first electron injection layer 81, and a cathode 20 stacked in sequence.
  • the organic electroluminescent device includes two light-emitting layers, namely a first light-emitting layer 41 and a second light-emitting layer 42, and the anode 10, the first light-emitting layer 41, the second light-emitting layer 42, and the cathode 20 are arranged in sequence, wherein the first light-emitting layer 41 is a phosphorescence sensitization layer, and the second light-emitting layer 42 is a phosphorescent layer; or, the second light-emitting layer 42 is a phosphorescence sensitization layer, and the first light-emitting layer 41 is a phosphorescent layer; or, both the first light-emitting layer 41 and the second light-emitting layer 42 are phosphorescence sensitization layers.
  • the first hole transport region disposed between the anode 10 and the first light-emitting layer 41 includes a first hole injection layer 11, a first hole transport layer 21, and a first electron blocking layer 31.
  • the second electron transport region disposed between the first light-emitting layer 41 and the n-type charge generation layer 72 includes a second hole blocking layer 52 and a second electron transport layer 62.
  • the second hole transport region disposed between the p-type charge generation layer 71 and the second light-emitting layer 42 includes a second hole transport layer 22 and a second electron blocking layer 32.
  • the first electron transport region disposed between the second light-emitting layer 42 and the cathode 20 includes a first hole injection layer 11, a first hole transport layer 21, and a first electron blocking layer 31.
  • the region includes a first hole blocking layer 51, a first electron transport layer 61 and a first electron injection layer 81, and the anode 10, the first hole injection layer 11, the first hole transport layer 21, the first electron blocking layer 31, the first light-emitting layer 41, the second hole blocking layer 52, the second electron transport layer 62, the n-type charge generation layer 72, the p-type charge generation layer 71, the second hole transport layer 22, the second electron blocking layer 32, the second light-emitting layer 42, the first hole blocking layer 51, the first electron transport layer 61, the first electron injection layer 81, and the cathode 20 are stacked in sequence.
  • the host material in the phosphor layer may include but is not limited to one or more of the compounds PH-1 to PH-85, and the phosphorescent material in the phosphor layer may include but is not limited to one or more of the compounds RPD-1 to RPD-29.
  • the mass content of the phosphorescent material is 0.1-20%, such as 0.1%, 0.5%, 1%, 3%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, etc., and the balance is the host material.
  • the thickness of the above-mentioned light-emitting layer can be For example Etc., generally preferred
  • the material of the n-type charge generation layer may include an organic matrix material, or a mixture of an organic matrix material and a doping material.
  • the organic matrix material includes, for example, a phenanthroline compound, such as but not limited to one or more of the following compounds CGL-1 to CGL-12.
  • the doping material may include a metal compound such as a metal and/or a metal salt, such as but not limited to one or more of Liq, LiF, NaCl, CsF, Li 2 O, Cs 2 CO 3 , BaO, Na, Li, Ca, Mg, Ag, and Yb.
  • the mass content of the doping material can be 0.1-20%, for example 0.1%, 0.5%, 1%, 3%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, etc., and the remainder is organic matrix material.
  • the material of the p-type charge generation layer may include but is not limited to one or more of the following compounds HT-1 to HT-51, HI-1 to HI-3, for example, may include a mixture of a first type of compound (one or more of HT-1 to HT-51) and a second type of compound (one or more of HI-1 to HI-3).
  • the mass content of the second type of compound is 0.1-30%, for example, 0.1%, 0.5%, 1%, 3%, 5%, 8%, 10%, 12%, 15%, 18%, 20%, 22%, 25%, 28%, 30%, etc., and the remainder is the first type of compound.
  • the organic electroluminescent device further comprises a substrate, and the anode can be formed on the substrate by sputtering or depositing the anode material, and the remaining layers can be formed by conventional methods in the art such as vacuum thermal evaporation, spin coating, printing, etc., which will not be described in detail.
  • the substrate can be glass or polymer material with excellent mechanical strength, thermal stability, waterproofness, and transparency.
  • the substrate used as a display can also have a thin film transistor (TFT).
  • TFT thin film transistor
  • the anode includes transparent conductive oxide materials such as indium tin oxide (or indium tin oxide, i.e., ITO), indium zinc oxide (or indium zinc oxide, i.e., IZO), tin dioxide ( SnO2 ), zinc oxide (ZnO), and any combination thereof;
  • the cathode material can be metals or alloys such as magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and any combination thereof.
  • the organic electroluminescent device may be a top-emitting device (or top-emitting device), and the substrate structure with an anode may be a top-emitting substrate structure conventionally used in the art for top-emitting devices.
  • the substrate structure with an anode includes an ITO layer, a silver layer, and an ITO layer stacked in sequence, and the thicknesses thereof may be respectively
  • a light extraction layer (CPL) 9 may be provided on the side of the cathode facing away from the anode, which is used to adjust the top-emitting microcavity and adjust the light color and efficiency of the top-emitting device.
  • the thickness of the light extraction layer 9 can be the conventional thickness of such layers in the art, for example like wait.
  • the material of the light extraction layer 9 can be a conventional material of such layers in the art, for example, including, but not limited to, one or more of the following compounds CPL-1 to CPL-3:
  • the material of the hole transport region includes but is not limited to one or more of the following compounds: phthalocyanine derivatives (such as CuPc), conductive polymers or polymers containing conductive dopants (such as polyphenylene vinylene, polyaniline/dodecylbenzenesulfonic acid (Pani/DBSA), poly(3,4-ethylenedioxythiophene)/poly(4-styrenesulfonate) (PEDOT/PSS), polyaniline/camphorsulfonic acid (Pani/CSA), polyaniline/poly(4-styrenesulfonate) (Pani/PSS)), aromatic amine derivatives, wherein the aromatic amine derivatives include one or more of the following compounds HT-1 to HT-51:
  • the material of the hole injection layer may include, but is not limited to, one or more of the above HT-1 to HT-51 and the following HI-1 to HI-3:
  • the material of the electron blocking layer may include, but is not limited to, one or more of the above HT-1 to HT-51 and the above PH-47 to PH-77.
  • the material of the electron transport layer may include but is not limited to one or more of the following ET-1 to ET-73:
  • the material of the hole blocking layer may include, but is not limited to, one or more of the above ET-1 to ET-73 and the above PH-1 to PH-46.
  • the material of the electron injection layer may include, but is not limited to, one or more of LiQ, LiF, NaCl, CsF, Li 2 O, Cs 2 CO 3 , BaO, Na, Li, Ca, Mg, or Yb.
  • the embodiment of the present application also provides a display device, including the above-mentioned organic electroluminescent device.
  • the display device can specifically be a display device such as an OLED display, and any product or component with a display function such as a TV, a digital camera, a mobile phone, a tablet computer, etc. including the display device.
  • the display device has the same advantages as the above-mentioned organic electroluminescent device over the prior art, which will not be repeated here.
  • the organic electroluminescent device of the present application is further introduced below through specific embodiments.
  • the half-width of the narrow-spectrum fluorescent materials used (such as A68, A84, A92, A227, A231, A232, A244, A266, etc.) is between 30 and 35 nm; the half-width of the phosphorescent material RPD-8 is about 65 nm.
  • the current efficiency and L95 life of the devices in each embodiment and comparative example were measured, and the ratio of the measured current efficiency of the devices in each embodiment and comparative example to the current efficiency of the device in comparative example 1 was calculated as the efficiency ratio, and the results are shown in Table 1; the ratio of the measured L95 life of the devices in each embodiment and comparative example to the L95 life of the device in comparative example 1 was calculated as the life ratio, and the results are shown in Table 1.
  • the organic light intensity provided in the device embodiment and the device comparison example was measured using a digital source meter and a PR650.
  • the current efficiency of the electroluminescent device specifically, when the voltage is increased at a rate of 0.1 V per second, when the brightness of the device reaches 6000 cd/ m2 , the current efficiency (CE) of the device at this time can be directly tested on the PR650.
  • the life test of LT95 is as follows: Use a brightness meter at a brightness of 10000cd/ m2 , maintain a constant current, and measure the time it takes for the brightness of the organic electroluminescent device to drop to 9500cd/ m2 , in hours (h).
  • the device of this embodiment is a top-emitting red light stacked device, the structure of which is shown in FIG2 , and the preparation method is as follows:
  • the top-emitting substrate coated with an ITO conductive layer was ultrasonically treated in a commercial cleaning agent, rinsed in deionized water, ultrasonically degreased in an acetone:ethanol mixed solvent, baked in a clean environment until the water was completely removed, cleaned with ultraviolet light and ozone, and bombarded with a low-energy cation beam;
  • the top emission substrate with the ITO conductive layer is placed in a vacuum chamber and evacuated to less than 1 ⁇ 10 -5 Pa.
  • HT-28 material and HI-2 material are co-evaporated on the anode layer as the first hole injection layer.
  • the proportion of HI-2 material is 3%
  • the evaporation rate of HT-28 material is The total film thickness of the evaporated film (i.e. the thickness of the first hole injection layer) is Among them, 3% is based on the sum of the mass of the HT-24 material and the HI-2 material as 100%, that is, the total mass of the second hole injection layer is 100%.
  • the percentages involved below are all based on the total mass of the corresponding functional layer as 100%.
  • the total film thickness of the vapor deposition is the thickness of the corresponding functional layer formed by vapor deposition, which is not repeated one by one;
  • Vacuum evaporation of the first electron blocking layer on the first hole transport layer is performed using HT-29 as the material at a evaporation rate of The total film thickness of the vapor deposition is
  • Vacuum co-evaporation of a first light-emitting layer on the first electron blocking layer wherein the first light-emitting layer includes 94% of a main material PH5, 5% of a phosphorescent sensitizer PRD8, and 1% of a narrow spectrum fluorescent dye A227, and the evaporation is performed by a multi-source co-evaporation method.
  • the evaporation rate of the main material is The total film thickness of the vapor deposition is
  • ET-52 material and ET-57 material were vacuum co-deposited on the second hole blocking layer as the second electron transport layer.
  • the mass ratio of the two materials was 1:1.
  • the evaporation rates of the two materials were The total film thickness of the vapor deposition is
  • CGL-3 material and metal Yb were co-evaporated on the second electron transport layer as an n-type charge generation layer.
  • the CGL-3 evaporation rate was The proportion of metal Yb is 3%, and the total thickness is
  • HI-2 and HT-28 materials are evaporated on the n-type charge generation layer as the p-type charge generation layer.
  • the HT-28 evaporation rate is The proportion of HI-2 is 5%, and the total thickness is
  • a second hole transport layer was vacuum-deposited on the p-type charge generation layer.
  • the material used was HT-28 at a deposition rate of The total film thickness of the vapor deposition is
  • the thickness of the vacuum evaporation on the first electron transport layer is Yb material as the first electron injection layer
  • CPL-3 material is evaporated on the cathode as a light extraction layer.
  • the CPL-3 evaporation rate is The total film thickness of the vapor deposition is
  • Example 2 The only difference from Example 1 is that the second light-emitting layer is a phosphorescence sensitization layer (with the same composition as the first light-emitting layer (phosphorescence sensitization layer) in Example 1), and the first light-emitting layer is a phosphorescent layer (with the same composition as the second light-emitting layer (phosphorescent layer) in Example 1), and the other conditions are the same as Example 1.
  • the second light-emitting layer is a phosphorescence sensitization layer (with the same composition as the first light-emitting layer (phosphorescence sensitization layer) in Example 1)
  • the first light-emitting layer is a phosphorescent layer (with the same composition as the second light-emitting layer (phosphorescent layer) in Example 1)
  • the other conditions are the same as Example 1.
  • Example 3 The only difference from Example 1 is that the first light-emitting layer and the second light-emitting layer are both phosphorescence sensitization layers (with the same composition as the first light-emitting layer (phosphorescence sensitization layer) in Example 1), and the other conditions are the same as Example 1; wherein the device preparation process of Example 3 is different from the device preparation process of Example 1 only in that, in step (12), the second light-emitting layer is vacuum co-evaporated on the second electron blocking layer, and the second light-emitting layer includes 94% of the main material PH5, 5% of the phosphorescence sensitizer PRD8, and 1% of the narrow spectrum fluorescent dye A227, and the evaporation is performed by a multi-source co-evaporation method, and the evaporation rate of the main material is The total film thickness of the vapor deposition is
  • Embodiment 4-12 The only difference from Embodiment 3 is that different narrow spectrum fluorescent materials are used in the phosphorescence sensitization layer.
  • the narrow spectrum fluorescent materials used in Embodiments 3-12 are shown in Table 1.
  • Example 13-20 The only difference from Example 3 is that the types of main materials in the phosphorescence sensitization layer are different, see Table 1 for details, and the other conditions are the same.
  • Embodiments 21-25 The only difference from Embodiment 3 is that the types of phosphorescent sensitizers in the phosphorescent sensitizing layer are different, as shown in Table 1, and the other conditions are the same;
  • Examples 26-36 The only difference from Example 3 is that in the phosphorescence sensitization layer, the mass contents of the main material, phosphorescence sensitizer, and fluorescent material are different, as shown in Table 1, and the other conditions are the same.
  • Examples 37-38 The only difference from Example 3 is that the compositions of the first light-emitting layer and the second light-emitting layer are different, see Table 1 for details.
  • Example 39 The only difference from Example 3 is that the composition of the second light-emitting layer is different, see Table 1 for details.
  • Comparative Example 1 The difference from Example 1 is that the first light-emitting layer and the second light-emitting layer are both phosphorescent layers (with the same composition as the second light-emitting layer (phosphorescent layer) in Example 1); the other conditions are the same as Example 1.
  • Comparative Example 2 The difference from Example 1 is that the device structure is a single light-emitting layer device, and its structure is shown in Figure 1, that is, it includes an anode, a first hole injection layer, a first hole transport layer, a first electron blocking layer, a first light-emitting layer (phosphorescence sensitization layer), a first hole blocking layer, a first electron transport layer, a first electron injection layer, and a cathode stacked in sequence, and the remaining conditions are the same as those in Example 1; the single light-emitting layer device is prepared by referring to steps (1) to (5) and (13) to (17) in Example 1, which will not be repeated here.
  • Comparative Example 3 The difference from Example 3 is that the compositions of the first light-emitting layer and the second light-emitting layer are different, see Table 1 for details.
  • compositions of the first light-emitting layer and the second light-emitting layer of Examples 1-39 and Comparative Examples 1-3, as well as the performance test results of the devices are summarized in Table 1.
  • the meaning is: in the first light-emitting layer, the mass ratio of PH-41 to PH-60 is 1:1, and the ratio of the sum of the mass of PH-41 and PH-60 to the total mass of the first light-emitting layer is 94%.
  • Examples 1-3 it can be seen from Examples 1-3 that the device in which both the first light-emitting layer and the second light-emitting layer are phosphorescent sensitization layers exhibits better performance such as efficiency and lifespan.
  • R 1 , R 2 , R 3 , R 4 , R 3X , and R 4X will affect the device performance to a certain extent, and the efficiency and life of the device are more significantly improved when A231 and A232 are used.
  • Example 39 and Comparative Example 3 It can be seen from Example 3, Example 39 and Comparative Example 3 that different host materials, sensitizers and fluorescent materials affect the life and efficiency of the device.
  • the two light-emitting layers of Example 3 are phosphorescent sensitization layers that introduce narrow-spectrum fluorescent materials with a half-width of less than 45nm, and match specific host materials and sensitizers, showing more excellent performance such as efficiency and life.

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Abstract

本申请提供一种有机电致发光器件及显示装置，有机电致发光器件包括至少一个发光层，且所述至少一个发光层包括至少一层磷光敏化层，所述磷光敏化层包括主体材料、磷光敏化剂和窄光谱荧光材料，所述窄光谱荧光材料的半峰宽小于45nm。本申请能够提高有机电致发光器件的效率和寿命等性能。

Description

有机电致发光器件及显示装置
本申请要求于2022年11月14日提交中国专利局、申请号为202211418348.3、申请名称为“有机电致发光器件及显示装置”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及一种有机电致发光器件及显示装置，属于有机电致发光技术领域。
背景技术
有机电致发光器件(Organic Light Emitting Diode，OLED)，是一种通过电流驱动而达到发光目的的器件，其主要特性来自于其中的发光层，当施加适当电压后，电子和空穴会在发光层中结合产生激子并根据发光层的特性发出不同波长的光。现阶段，发光层材料普遍存在着器件效率低、寿命短等缺陷，尤其是叠层器件，其通常包括多个发光层，发光层主要由主体材料和磷光材料构成，受限于磷光材料的结构特性(如长波长的3MLCT吸收、以及自身瞬态寿命较长等)，易导致器件效率低、寿命短等问题。
发明内容
本申请提供一种有机电致发光器件及显示装置，能够提高器件的效率和寿命等性能，有效克服现有技术存在的缺陷。
本申请的一方面，提供一种有机电致发光器件，包括至少一个发光层，且所述至少一个发光层包括至少一层磷光敏化层，所述磷光敏化层包括主体材料、磷光敏化剂和窄光谱荧光材料，所述窄光谱荧光材料的半峰宽小于45nm。
本申请的另一方面，提供一种显示装置，包括上述有机电致发光器件。
本申请中，有机电致发光器件的至少一个发光层为磷光敏化层(亦即至少包括一层磷光敏化层)，该磷光敏化层的组成体系包括主体材料、磷光敏化剂和窄光谱荧光材料，所引入的窄光谱荧光材料的半峰宽(FWHM)小于45nm，在这样的组成体系下，使用磷光材料敏化窄光谱荧光材料进行发光，可以改善磷光材料自身半峰宽较宽等问题，提高器件效率和寿命等性能。
附图说明
图1为本申请一实施例的有机电致发光器件的结构示意图；
图2为本申请另一实施例的有机电致发光器件的结构示意图；
附图标记说明：10：阳极；11：第一空穴注入层；20：阴极；21：第一空穴传输层；22：第二空穴传输层；31：第一电子阻挡层；32：第二电子阻挡层；41：第一发光层；42：第二发光层；51：第一空穴阻挡层；52：第二空穴阻挡层；61：第一电子传输层；62：第二电子 传输层；71：p型电荷生成层；72：n型电荷生成层；81：第一电子注入层；9：光取出层。
具体实施方式
相关技术中，发光层材料普遍存在着器件效率低、寿命短等缺陷，尤其是叠层器件，其通常具有至少两个发光层，发光层主要由主体材料和磷光材料(或称磷光染料)组成，例如，红色叠层器件中，发光层基本均采用主体材料和红光磷光染料这一组成体系，在这样的组成体系下，受限于磷光材料的结构特性(如长波长的3MLCT吸收、以及自身瞬态寿命较长等)，往往存在着发射峰宽较宽、以及由此导致的器件效率低、寿命短等问题。
有鉴于此，本申请实施例提供一种有机电致发光器件，如图1和图2所示，该有机电致发光器件包括至少一个发光层，且至少一个发光层包括至少一层磷光敏化层，磷光敏化层包括主体材料、磷光敏化剂和窄光谱荧光材料，窄光谱荧光材料的半峰宽小于45nm。
上述有机电致发光器件至少包括一层磷光敏化层，该磷光敏化层的组成体系包括主体材料、磷光敏化剂和窄光谱荧光材料，所引入的窄光谱荧光材料的半峰宽(FWHM)小于45nm，在这样的组成体系下，使用磷光材料敏化窄光谱荧光材料进行发光，可以改善磷光材料自身半峰宽较宽等问题，从而提高器件效率和寿命等性能，实现器件高效率、高稳定性的发光。
在一些实施例中，窄光谱荧光材料的发光峰值可以为550nm-680nm，例如550nm、580nm、590nm、600nm、610nm、620nm、630nm、640nm、650nm、660nm、670nm、680nm等。优选地，窄光谱荧光材料的发光峰值为590-650nm，其发光光谱为红光，可以使本申请实施例的有机电致发光器件产生红光，作为红光器件，同时通过引入主体材料、磷光敏化剂和窄光谱荧光材料的三掺体系形成发光层，并使窄光谱荧光材料的FWHM小于45nm，可以提高红光器件的效率和寿命等性能。
具体地，上述窄光谱荧光材料可以选自FWHM＜45nm的具有双硼共振结构的荧光材料，例如，在一些优选实施例中，窄光谱荧光材料包括具有如下式V-1、式V-2、式V-3所示结构的化合物中的一种或多种：

其中，R1、R2、R3、R4、R3X、R4X各自独立地表示单取代至最大允许取代基，且R1和R2各自独立地选自取代或未取代的C1～C20直链或支链烷基、取代或未取代的C3～C20环烷基、取代或未取代的C1～C20烷基硅基中的任意一种，R3、R4、R3X和R4X各自独立地选自取代或未取代的C6～C60芳基、取代或未取代的C3～C60杂芳基中的任意一种；或者，R1和R2各自独立地选自取代或未取代的C6～C60芳基、取代或未取代的C3～C60杂芳基中的任意一种，R3、R4、R3X和R4X各自独立地选自取代或未取代的C1～C20直链或支链烷基、取代或未取代的C3～C20环烷基、取代或未取代的C1～C20烷基硅基中的任意一种。
其中，当R1、R2、R3、R4、R3X、R4X带有取代基(即为取代的上述基团)时，其取代基各自独立选自卤素、C1～C20直链或支链烷基、C3～C20环烷基、硝基、氰基、氨基、羟基、C1～C20烷基硅基、C6～C60芳基或C3～C60杂芳基中的至少一种，进一步优选为C1～C20直链或支链烷基、C3～C20环烷基、C1～C20烷基硅基、C6～C60芳基或C3～C60杂芳基中的任意一种或至少两种的组合；R1、R2、R3、R4、R3X、R4X各自独立地与相邻的苯环结构不连接或通过化学键连接成环。
上述具有式V-1、式V-2、式V-3所示结构的化合物具有双硼共振结构，通过母核结构与取代基的协同作用，可以基于三线态激子而实现较高的发光效率，具有优良的载流子传输效率，其发射光谱为红光，且发光光谱窄，FWHM＜45nm，能够有效调节和改善光色，提高器件的光色、光纯度、发光效率和寿命等性能。
具体地，上述窄光谱荧光材料的分子结构中，外围基团(R1、R2、R3、R4、R3X和R4X)中一部分为具有芳香性的基团(即上述芳基或杂芳基)，一部分为不具有芳香性的基团(即上述直链或支链烷基、环烷基、烷基硅基)，使分子结构呈现非对称性，可以调节光色，使化合物的光色达到620nm以上；而且，外围基团的引入使载流子迁移率更高，有利于降低电压，并对母核形成更有效的保护，抑制激子淬灭，从而提升效率和寿命。
本申请中，对于化学元素的表述，若无特别说明，则包含化学性质相同的同位素的概念，例如，氢(H)则包括1H(氕)、2H(氘，D)、3H(氚，T)等，碳(C)则包括12C、13C等。
本申请中，若无特别说明，杂芳基的杂原子选自N、O、S、P、B、Si或Se中的原子或原子团，优选N、O、S。
本申请中，所述卤素均可以为氟、氯、溴或碘。
本申请中，“—”划过的环结构的表达方式，表示环结构与取代基的连接位点为该环结构上任意能够成键的位置。具体地，上述“取代或未取代”的基团，可以取代有一个取代基，也可以取代有多个取代基，当取代基为多个(至少2个)时，可以为相同或不同的取代基。
示例性地，R1、R2、R3、R4、R3X、R4X的个数可以为1个、2个、3个或4个等；当R1、R2、R3、R4、R3X、R4X为多个(≥2个)时，多个(≥2个)取代基为相同或不同的基团。
本申请中，Ca～Cb的表达方式代表该基团具有的碳原子数为a～b，若无特殊说明，该碳原子数不包括取代基的碳原子数。示例性地，上述C1～C20均可以为C1、C2、C3、C4、C5、C6、C7、C8、C9、C10、C11、C12、C13、C14、C15、C16、C17、C18或C20等；C3～C20均可以为C3、C4、C5、C6、C7、C8、C9、C10、C11、C12、C13、C14、C15、C16、C17、C18、C19或C20等；C3～C60均可以为C3、C4、C5、C6、C9、C10、C12、C14、C16、C18、C20、C22、C24、C26、C28、C30、C32、C34、C36、C38、C40、C42、C44、C46、C48、C50、C52、C54、C56或C58等；C6～C60均可以为C6、C9、C10、C12、C14、C16、C18、C20、C22、C24、C26、C28、C30、C32、C34、C36、C38、C40、C42、C44、C46、C48、C50、C52、C54、C56或C58等。
示例性地，C1～C20直链或支链烷基选自甲基、乙基、正丙基、异丙基、正丁基、异丁基、叔丁基、2-甲基丁基、正戊基、异戊基、新戊基、正己基、新己基、2-乙基己基、正辛基、正庚基、正壬基、正癸基等，但不局限于此。
在一些具体实施例中，上述取代或未取代的C1～C20直链或支链烷基选自如下基团中的一种：甲基、乙基、正丙基、 *代表基团的连接位点。
具体地，C3～C20环烷基可以包括单环烷基或多环烷基，其中，单环烷基是指含有单个环状结构的烷基，多环烷基是指两个或两个以上的环烷基通过共享一个或多个环上碳原子所组成的结构。示例性地，C3～C20环烷基选自环丙基、环丁基、环戊基、环己基、金刚烷基等，但不局限于此。
具体地，C6～C60芳基包括单环芳基和稠环芳基，其中，单环芳基是指单个苯基或联苯基(即基团中含有至少1个苯基，当含有至少2个苯基时，苯基之间通过单键相连)，例如包括苯基、联苯基、三联苯基等；稠环芳基是指含有至少2个芳环、且芳环之间通过共用两个相邻的碳原子互相稠合形成的基团，例如包括萘基、蒽基、菲基、茚基、芴基及其衍生物(9,9-二甲基芴基、9,9-二乙基芴基、9,9-二丙基芴基、9,9-二丁基芴基、9,9-二戊基芴基、9,9-二己基芴基、9,9-二苯基芴基、9,9-二萘基芴基、螺二芴基、苯并芴基等)、荧蒽基、三亚苯基、芘基、苝基、基或并四苯基等。
在一些具体实施例中，上述取代或未取代的C6～C60芳基选自如下基团中的一种：*代表基团的连接位点。
具体地，C3～C60杂芳基包括单环杂芳基或稠环杂芳基，其中，单环杂芳基是指单个杂芳基(芳杂环)或单个杂芳基与另一芳香性基团(芳基或杂芳基)通过单键连接而成的联芳香基，亦即，单环杂芳基含有至少一个杂芳基，当分子中含有一个杂芳基和其他芳香性基团时，杂芳基和其他芳香性基团之间通过单键进行连接，示例性地，单环杂芳基包括吡啶基、嘧啶基、吡嗪基、哒嗪基、三嗪基、呋喃基、噻吩基、吡咯基等；稠环杂芳基是指分子中含有至少一个杂芳基和至少一个芳香性基团(杂芳基或芳基)，且二者之间共用两个相邻的原子互相稠合，例如包括喹啉基、异喹啉基、喹喔啉基、喹唑啉基、苯并呋喃基、苯并噻吩基、异苯并呋喃基、异苯并噻吩基、吲哚基、二苯并呋喃基、二苯并噻吩基、咔唑基及其衍生物(N-苯基咔唑基、N-萘基咔唑基、苯并咔唑基、二苯并咔唑基、吲哚并咔唑基、氮杂咔唑基等)、吖啶基、吩噻嗪基、吩恶嗪基、氢化吖啶基等。
在本申请中，“各自独立地”表示其主语具有多个时，彼此之间可以相同也可以不同。
一般情况下，R1和R2可以为相同的基团，R3和R4为相同的基团，进一步优选地，R3、R4、R3X和R4X为相同的基团。
此外，R1和R2可以各自独立地连接于O原子所连碳原子的对位或间位，优选地，R1和R2各自独立地连接于O原子所连碳原子的间位，这样可以进一步提高器件的效率和寿命等性能。
此外，R3和R4可以连接于N原子所连碳原子的对位。
在一些具体实施例中，窄光谱荧光材料包括但不限于以下化合物A1～A268中的一种或多种：












此外，上述主体材料可以包括但不限于以下化合物PH-1至PH-85中的一种或多种：



此外，上述磷光敏化剂包括但不限于以下化合物RPD-1至RPD-29中的一种或多种：

研究显示，相对而言，采用上述化合物PH-1至PH-85中的一种或多种作为主体材料、RPD-1至RPD-29中的一种或多种作为磷光敏化剂，更利于与上述窄光谱荧光材料配合，进一步提高器件的效率和寿命等性能。
一般情况下，上述磷光敏化层中，磷光敏化剂的质量含量为0.1-50％，例如0.1％、3％、5％、8％、10％、12％、15％、18％、20％、25％、30％、35％、40％、45％、50％等；窄光谱荧光材料的质量含量为0.1-30％，例如0.1％、0.3％、0.5％、0.8％、1％、1.5％、2％、2.5％、3％、4％、5％、6％、7％、8％、9％、10％、12％、15％、18％、20％、25％、30％；余量为主体材料。
优选地，上述磷光敏化层中，磷光敏化剂的质量含量为0.1-15％，更优选不超过10％，例如为1-10％，利于进一步提高有机电致发光器件的效率和寿命等性能。
优选地，上述磷光敏化层中，窄光谱荧光材料的质量含量为0.1-5％，更优选0.5-2％，利于进一步提高有机电致发光器件的效率和寿命等性能。
上述有机电致发光器件还包括阳极、空穴传输区、电子传输区和阴极，发光层、空穴传 输区和电子传输区置于阳极和阴极之间。
具体地，如图1所示，上述有机电致发光器件可以为单层器件(或称单发光层器件)，即其具有一层发光层，阳极、空穴传输区、发光层、电子传输区和阴极依次层叠设置。
或者，如图2所示，上述有机电致发光器件为叠层器件，其还包括设于阳极和阴极之间的电荷产生层(Charge Generation Layer，CGL)，其发光层的数量为至少两个，该至少两个发光层层叠设置(或称堆叠设置)，具体是沿阳极至阴极的方向依次层叠设置，电荷产生层设于两个相邻的发光层之间(即每两个相邻的发光层之间均设有电荷产生层)。
其中，至少有一个发光层为含有上述主体材料、磷光敏化剂和窄光谱荧光材料的磷光敏化层，其余发光层可以为上述磷光敏化层，或者，其余发光层为包括主体材料和磷光材料、而不包含上述窄光谱荧光材料的磷光层。
当上述有机电致发光器件同时含有磷光敏化层和磷光层时，磷光层中的主体材料与磷光敏化层中的主体材料可以相同或不同，磷光层中的磷光材料与磷光敏化层中的磷光敏化剂可以相同或不同；当上述有机电致发光器件的发光层均为磷光敏化层时，不同发光层中的主体材料可以相同或不同，不同发光层中的磷光敏化剂可以相同或不同，不同发光层中的窄光谱荧光材料可以相同或不同。
示例性地，上述有机电致发光器件可以为红色叠层器件，即上述发光层为红色发光层，即多个(至少两个)红色发光层沿阳极和阴极的方向依次层叠设置，其中的至少一者为上述磷光敏化层，该磷光敏化层具体为用于发射红光的红光磷光敏化发光层。
在叠层器件中，空穴传输区包括设置在阳极与最靠近阳极的发光层(如下述第一发光层)之间的第一空穴传输区、以及设置在阴极与最靠近阴极的发光层(如下述第二发光层)之间的第一电子传输区。
此外，电荷产生层包括n型电荷产生层(n-CGL)和p型电荷产生层(p-CGL)，相邻的n型电荷产生层和p型电荷产生层中，n型电荷产生层位于p型电荷产生层背离阴极的一侧，p型电荷产生层位于n型电荷产生层背离阳极的一侧；空穴传输区还包括第二空穴传输区，电子传输区还包括第二电子传输区，在位于两个相邻的发光层之间的电荷产生层中，第二电子传输区设置在n型电荷产生层与一发光层之间，第二空穴传输区设置在p型电荷产生层与另一发光层之间。
具体地，上述空穴传输区(第一空穴传输区和第二空穴传输区)可以包括空穴注入层(HIL)、空穴传输层(HTL)、电子阻挡层(EBL)中的至少一者，例如可以为单层结构的空穴传输层(包括只含有一种化合物的单层空穴传输层或含有多种化合物的单层空穴传输层)，也可以为包括空穴注入层(HIL)、空穴传输层(HTL)、电子阻挡层(EBL)中的至少一层的多层结构。
示例性地，第一空穴传输区包括空穴注入层、空穴传输层、电子阻挡层，阳极、空穴注入层、空穴传输层、电子阻挡层、最靠近阳极的发光层依次层叠设置。
示例性地，第二空穴传输区包括空穴传输层和电子阻挡层，p型电荷产生层、空穴传输层、电子阻挡层、发光层依次层叠设置。
具体地，上述电子传输区(第一电子传输区和第二电子传输区)可以包括电子注入层(EIL)、电子传输层(ETL)、空穴阻挡层(HBL)中的至少一者，例如可以为单层结构的电子传输层(包括只含有一种化合物的单层电子传输层或含有多种化合物的单层电子传输层)，也可以为包 括电子注入层(EIL)、电子传输层(ETL)、空穴阻挡层(HBL)中的至少一层的多层结构。
示例性地，第一电子传输区包括电子注入层、电子传输层、空穴阻挡层，最靠近阴极的发光层、空穴阻挡层、电子传输层、电子注入层、阴极依次层叠设置。
示例性地，第二电子传输区包括电子传输层和空穴阻挡层，发光层、空穴阻挡层、电子传输层、n型电荷产生层依次层叠设置。
在一些具体实施例中，如图1所示，上述有机电致发光器件为单层器件，其包括依次层叠设置的阳极10、第一空穴注入层11、第一空穴传输层21、第一电子阻挡层31、第一发光层41、第一空穴阻挡层51、第一电子传输层61、第一电子注入层81、阴极20。
在另一些具体实施例中，如图2所示，上述有机电致发光器件包括两个发光层，分别为第一发光层41和第二发光层42，阳极10、第一发光层41、第二发光层42、阴极20依次设置，其中，第一发光层41为磷光敏化层，第二发光层42为磷光层；或者，第二发光层42为磷光敏化层，第一发光层41为磷光层；或者，第一发光层41与第二发光层42均为磷光敏化层。
其中，设于阳极10与第一发光层41之间的第一空穴传输区包括第一空穴注入层11、第一空穴传输层21、第一电子阻挡层31，设于第一发光层41与n型电荷产生层72之间的第二电子传输区包括第二空穴阻挡层52和第二电子传输层62，设于p型电荷产生层71与第二发光层42之间的第二空穴传输区包括第二空穴传输层22和第二电子阻挡层32，设于第二发光层42与阴极20之间的第一电子传输区包括第一空穴阻挡层51、第一电子传输层61和第一电子注入层81，阳极10、第一空穴注入层11、第一空穴传输层21、第一电子阻挡层31、第一发光层41、第二空穴阻挡层52、第二电子传输层62、n型电荷产生层72、p型电荷产生层71、第二空穴传输层22、第二电子阻挡层32、第二发光层42、第一空穴阻挡层51、第一电子传输层61、第一电子注入层81、阴极20依次层叠设置。
具体地，上述磷光层中的主体材料可以包括但不限于上述化合物PH-1至PH-85中的一种或多种，磷光层中的磷光材料可以包括但不限于上述化合物RPD-1至RPD-29中的一种或多种。此外，磷光层中，磷光材料的质量含量为0.1-20％，例如0.1％、0.5％、1％、3％、5％、8％、10％、12％、15％、18％、20％等，余量为主体材料。
此外，上述发光层(磷光敏化层或磷光层)的厚度可以为例如 等，一般优选
一般情况下，n型电荷产生层的材料可以包括有机基体材料、或者有机基体材料与掺杂材料的混合物，有机基体材料例如包括邻菲罗啉类化合物，例如包括但不限于以下化合物CGL-1至CGL-12中的一种或多种，掺杂材料可以包括金属和/或金属盐等金属化合物，例如包括但不限于Liq、LiF、NaCl、CsF、Li2O、Cs2CO3、BaO、Na、Li、Ca、Mg、Ag、Yb中的一种或多种。
在一些具体实施例中，n型电荷生成层中，掺杂材料的质量含量可以为0.1-20％，例如0.1％、0.5％、1％、3％、5％、8％、10％、12％、15％、18％、20％等，余量为有机基体材料。
此外，p型电荷产生层的材料可以包括但不限于以下化合物HT-1至HT-51、HI-1至HI-3中的一种或多种，例如可以包括第一类化合物(HT-1至HT-51中的一种或多种)与第二类化合物(HI-1至HI-3中的一种或多种)的混合物。
在一些具体实施例中，p型电荷生成层中，上述第二类化合物的质量含量为0.1-30％，例如0.1％、0.5％、1％、3％、5％、8％、10％、12％、15％、18％、20％、22％、25％、28％、30％等，余量为上述第一类化合物。
此外，上述有机电致发光器件还包括基板，阳极可以通过溅射或沉积阳极材料的方式形成于基板上，其余层可通过真空热蒸镀、旋转涂覆、打印等本领域常规方式形成，不再赘述。其中，基板可以为具有机械强度、热稳定性、防水性、透明度优异的玻璃或聚合物材料，此外，作为显示器用的基板上也可以带有薄膜晶体管(TFT)。
示例性地，阳极包括铟锡氧化物(或称氧化铟锡，即ITO)、铟锌氧化物(或称氧化铟锌，即IZO)、二氧化锡(SnO2)、氧化锌(ZnO)等氧化物透明导电材料和它们的任意组合；阴极材料可以采用镁(Mg)、银(Ag)、铝(Al)、铝-锂(Al-Li)、钙(Ca)、镁-铟(Mg-In)、镁-银(Mg-Ag)等金属或合金以及它们之间的任意组合。
在一些实施例中，上述有机电致发光器件可以为顶发光器件(或称顶发射器件)，带有阳极的基板结构可以是本领域常规用于顶发射器件的顶发射基板结构，例如，带有阳极的基板结构包括依次层叠设置的ITO层、银层、ITO层，其厚度可以分别为
此外，阴极背离阳极的一侧还可以设有光取出层(CPL)9，用于调节顶发射微腔，调节顶发射器件的光色及效率。
其中，光取出层9的厚度可以是本领域这类层的常规厚度，例如为如 等。
此外，光取出层9的材料可以是本领域这类层的常规材料，例如包括、但不限于以下化合物CPL-1至CPL-3中的一种或多种：
此外，上述空穴传输区的材料包括但不限于以下化合物中的一种或多种：酞菁衍生物(如CuPc)、导电聚合物或含导电掺杂剂的聚合物(如聚苯撑乙烯、聚苯胺/十二烷基苯磺酸(Pani/DBSA)、聚(3,4-乙撑二氧噻吩)/聚(4-苯乙烯磺酸盐)(PEDOT/PSS)、聚苯胺/樟脑磺酸(Pani/CSA)、聚苯胺/聚(4-苯乙烯磺酸盐)(Pani/PSS))、芳香胺衍生物，其中，芳香胺衍生物包括如下化合物HT-1至HT-51中的一种或多种：


此外，上述空穴注入层的材料可以包括但不限于上述HT-1至HT-51、以及下述HI-1至HI-3中的一种或多种：
此外，上述电子阻挡层的材料可以包括但不限于上述HT-1至HT-51、以及上述PH-47至PH-77中的一种或多种。
此外，上述电子传输层的材料可以包括但不限于以下ET-1至ET-73中的一种或多种：



此外，上述空穴阻挡层的材料可以包括但不限于上述ET-1至ET-73、以及上述PH-1至PH-46中的一种或多种。
此外，电子注入层的材料可以包括但不限于LiQ、LiF、NaCl、CsF、Li2O、Cs2CO3、BaO、Na、Li、Ca、Mg或Yb中的一种或多种。
本申请实施例还提供一种显示装置，包括上述有机电致发光器件。该显示装置具体可以为OLED显示器等显示器件，以及包括该显示器件的电视、数码相机、手机、平板电脑等任何具有显示功能的产品或者部件。该显示装置与上述有机电致发光器件相对于现有技术所具有的优势相同，在此不再赘述。
以下通过具体实施例对本申请的有机电致发光器件进行进一步的介绍。
以下实施例中，所用窄光谱荧光材料(如A68、A84、A92、A227、A231、A232、A244、A266等)的半峰宽介于30～35nm之间；磷光材料RPD-8的半峰宽为65nm左右。
以下实施例和对比例中，测得各实施例和对比例的器件的电流效率和L95寿命，并分别计算所测得的各实施例和对比例的器件电流效率与对比例1的器件电流效率的比值，作为效率比值，结果见表1；分别计算所测得的各实施例和对比例的器件L95寿命与对比例1的器件L95寿命的比值，作为寿命比值，结果见表1。
其中，在同样亮度下，使用数字源表及PR650测定器件实施例和器件比较例提供的有机 电致发光器件的电流效率，具体而言，以每秒0.1V的速率提升电压，当器件的亮度达到6000cd/m2时，在PR650上可以直接测试得到器件此时的电流效率(CE)。
LT95的寿命测试如下：使用亮度计在10000cd/m2亮度下，保持恒定的电流，测量有机电致发光器件的亮度降为9500cd/m2的时间，单位为小时(h)。
实施例1
本实施例的器件为顶发光红光叠层器件，其结构如图2所示，制备方法如下：
(1)将涂布了ITO导电层(阳极)的顶发射基板在商用清洗剂中超声处理，在去离子水中冲洗，在丙酮：乙醇混合溶剂中超声除油，在洁净环境下烘烤至完全除去水份，用紫外光和臭氧清洗，并用低能阳离子束轰击表面；
(2)把上述带有ITO导电层的顶发射基板置于真空腔内，抽真空至小于1×10-5Pa，在阳极层膜上共蒸镀HT-28材料和HI-2材料作为第一空穴注入层，HI-2材料的比例为3％，HT-28材料蒸镀速率为蒸镀总膜厚(即第一空穴注入层的厚度)为其中，3％是以HT-24材料和HI-2材料的质量之和为100％计，即以第二空穴注入层总质量为100％计，以下涉及到百分比数，均以相应功能层的总质量为100％计，此外蒸镀总膜厚为蒸镀形成的相应功能层的厚度，不一一赘述；
(3)在第一空穴注入层之上真空蒸镀第一空穴传输层，使用材料为HT-28，蒸镀速率为蒸镀总膜厚为
(4)在第一空穴传输层之上真空蒸镀第一电子阻挡层，使用材料为HT-29，蒸镀速率为蒸镀总膜厚为
(5)在第一电子阻挡层之上真空共蒸镀第一发光层，第一发光层包括94％主体材料PH5、5％磷光敏化剂PRD8、1％窄光谱荧光染料A227，利用多源共蒸的方法进行蒸镀，主体材料的蒸镀速率为蒸镀总膜厚为
(6)在第一发光层之上真空蒸镀第二空穴阻挡层，材料为PH-31，蒸镀速率为蒸镀总膜厚为
(7)在第二空穴阻挡层之上真空共蒸镀ET-52材料和ET-57材料作为第二电子传输层，二者质量比为1:1，两者的蒸镀速率均为蒸镀总膜厚为
(8)在第二电子传输层上共蒸镀CGL-3材料和金属Yb作为n型电荷产生层，CGL-3蒸镀速率为金属Yb的比例为3％，总厚度为
(9)在n型电荷产生层上蒸镀HI-2和HT-28材料作为p型电荷产生层，HT-28蒸镀速率为HI-2的比例为5％，总厚度为
(10)在p型电荷产生层上真空蒸镀第二空穴传输层，使用材料为HT-28，蒸镀速率为蒸镀总膜厚为
(11)在第二空穴传输层之上真空蒸镀第二电子阻挡层，使用材料为HT-29，蒸镀速率为蒸镀总膜厚为
(12)在第二电子阻挡层之上真空共蒸镀第二发光层，第二发光层包括94％主体材料PH5、6％磷光材料PRD8，利用多源共蒸的方法进行蒸镀，主体材料的蒸镀速率为 蒸镀总膜厚为
(13)在第二发光层之上真空蒸镀第一空穴阻挡层，材料为PH-31，蒸镀速率为 蒸镀总膜厚为
(14)在第一空穴阻挡层之上真空共蒸镀ET-52材料和ET-57材料作为第一电子传输层，二者质量比为1:1，两者的蒸镀速率均为蒸镀总膜厚为
(15)在第一电子传输层上真空蒸镀厚度为的Yb材料作为第一电子注入层；
(16)在第一电子注入层之上蒸镀Mg和Ag材料作为阴极，二者质量比为1:9(即Mg：Ag＝1:9)，蒸镀总膜厚为
(17)在阴极上蒸镀CPL-3材料作为光取出层，CPL-3蒸镀速率为蒸镀总膜厚为
实施例2：与实施例1的区别仅在于，第二发光层为磷光敏化层(与实施例1中的第一发光层(磷光敏化层)组成相同)，第一发光层为磷光层(与实施例1中的第二发光层(磷光层)组成相同)，其余条件与实施例1相同。
实施例3：与实施例1的区别仅在于，第一发光层与第二发光层均为磷光敏化层(与实施例1中的第一发光层(磷光敏化层)组成相同)，其余条件与实施例1相同；其中，实施例3的器件制备过程与实施例1的器件制备过程的区别仅在于，步骤(12)中，在第二电子阻挡层之上真空共蒸镀第二发光层，第二发光层包括94％主体材料PH5、5％磷光敏化剂PRD8、1％窄光谱荧光染料A227，利用多源共蒸的方法进行蒸镀，主体材料的蒸镀速率为蒸镀总膜厚为
实施例4-12：与实施例3的区别仅在于，磷光敏化层中采用不同窄光谱荧光材料，实施例3-12所用窄光谱荧光材料见表1。
实施例13-20：与实施例3的区别仅在于，磷光敏化层中，主体材料种类不同，具体见表1，其余条件相同。
实施例21-25：与实施例3的区别仅在于，磷光敏化层中，磷光敏化剂种类不同，具体见表1，其余条件相同；
实施例26-36：与实施例3的区别仅在于，磷光敏化层中，主体材料、磷光敏化剂、荧光材料的质量含量不同，具体见表1，其余条件相同。
实施例37-38：与实施例3的区别仅在于，第一发光层和第二发光层的组成不同，具体见表1。
实施例39：与实施例3的区别仅在于，第二发光层的组成不同，具体见表1。
对比例1：与实施例1的区别在于，第一发光层和第二发光层均为磷光层(与实施例1中的第二发光层(磷光层)组成相同)；其余条件与实施例1相同。
对比例2：与实施例1的区别在于，器件结构为单发光层器件，其结构如图1所示，即包括依次层叠设置的阳极、第一空穴注入层、第一空穴传输层、第一电子阻挡层、第一发光层(磷光敏化层)、第一空穴阻挡层、第一电子传输层、第一电子注入层、阴极，其余条件与实施例1相同；该单发光层器件参照实施例1中的步骤(1)～(5)和(13)～(17)制得，不再赘述。
对比例3：与实施例3的区别在于，第一发光层和第二发光层的组成不同，具体见表1。
其中，PH'-1、RPD'-1、A'-1的结构式如下：
实施例1-39、对比例1-3的第一发光层和第二发光层组成、以及器件的性能测试结果汇总于表1。
表1


*表示两种主体材料的质量比为1:1，两种主体材料在发光层中的质量含量之和为94％，以“PH-41：PH-60＝1:1,94％”
为例，其含义是：第一发光层中，PH-41与PH-60的质量比为1:1，PH-41与PH-60的质量之和与第一发光层的总质量的比例为94％。
从表1可以看出，相对于对比例1，实施例1-38制得的至少一个发光层为磷光敏化层的器件的效率和寿命显著提高；相对于对比例2，具有两个发光层的叠层器件具有更为显著的效率和寿命等性能。
此外，从实施例1-3可以看出，第一发光层和第二发光层均为磷光敏化层的器件，表现出更优的效率和寿命等性能。
此外，从实施例3-12可以看出，荧光材料采用A227、A231、A232、A244、A252、A255、A266的器件(实施例3-9)，其效率和寿命均优于荧光材料采用A68、A84、A92的器件(实施例10-12)，由此说明了，荧光材料分子结构中R1、R2取代在O原子所连碳原子的间位时，这一类的荧光材料应用于叠层器件中表现出更优的性能；其中，A227、A231、A232、A244为式V-3所示结构，相对具有更好的寿命等性能，可以看到，其中的R1、R2、R3、R4、R3X、R4X等取代基会在一定程度上影响器件性能，采用A231、A232时器件的效率和寿命的提升效果更为显著。
此外，从实施例26-36可以看出，相对而言，窄光谱荧光材料的含量范围为0.1-5％、更优选0.5-2％、磷光敏化剂含量不超过10％时，器件表现出更优的效率和寿命等性能。
从实施例3、实施例39、对比例3可以看出，不同主体材料、敏化剂和荧光材料影响器件的寿命和效率，实施例3的两层发光层均为引入窄光谱荧光材料半峰宽小于45nm的磷光敏化层，并匹配特定的主体材料和敏化敏化剂，表现出更为优异的效率和寿命等性能。

Claims (17)

  1. 一种有机电致发光器件，其中，包括至少一个发光层，且所述至少一个发光层包括至少一层磷光敏化层，所述磷光敏化层包括主体材料、磷光敏化剂和窄光谱荧光材料，所述窄光谱荧光材料的半峰宽小于45nm。
  2. 根据权利要求1所述的有机电致发光器件，其中，所述发光层的厚度为
  3. 根据权利要求2所述的有机电致发光器件，其中，所述发光层的厚度为
  4. 根据权利要求1所述的有机电致发光器件，其中，所述发光层的数量为至少两个，所述至少两个发光层层叠设置。
  5. 根据权利要求4所述的有机电致发光器件，其中，还包括阳极和阴极，所述至少两个发光层包括第一发光层和第二发光层，所述阴极、所述第一发光层、所述第二发光层、所述阳极依次设置，所述第一发光层为所述磷光敏化层，或者，所述第二发光层为所述磷光敏化层，或者，所述第一发光层与所述第二发光层均为所述磷光敏化层。
  6. 根据权利要求1所述的有机电致发光器件，其中，所述窄光谱荧光材料的发光峰值为550nm-680nm。
  7. 根据权利要求6所述的有机电致发光器件，其中，所述窄光谱荧光材料的发射峰值为590nm-650nm。
  8. 根据权利要求1所述的有机电致发光器件，其中，所述窄光谱荧光材料包括具有如下式V-1、式V-2、式V-3所示结构的化合物中的一种或多种：
    R1、R2、R3、R4、R3X、R4X各自独立地表示单取代至最大允许取代基，且R1和R2各自独立地选自取代或未取代的C1～C20直链或支链烷基、取代或未取代的C3～C20环烷基、取代或未取代的C1～C20烷基硅基中的任意一种，R3、R4、R3X和R4X各自独立地选自取代或未取代的C6～C60芳基、取代或未取代的C3～C60杂芳基中的任意一种；或者，R1和R2各自独立地选自取代或未取代的C6～C60芳基、取代或未取代的C3～C60杂芳基中的任意一种，R3、R4、R3X和R4X各自独立地选自取代或未取代的C1～C20直链或支链烷基、取代或未取代的C3～C20环烷基、取代或未取代的C1～C20烷基硅基中的任意一种；R1、R2、R3、R4、R3X、R4X中所述取代的取代基各自独立选自卤素、C1～C20直链或支链烷基、C3～C20环烷基、硝基、氰基、氨基、羟基、C1～C20烷基硅基、C6～C60芳基或C3～C60杂芳基中的至少一种；R1、R2、R3、R4、R3X、R4X各自独立地与相邻的苯环结构不连接或通过化学键连接成环。
  9. 根据权利要求8所述的有机电致发光器件，其中，
    所述R1和R2为相同的基团；
    和/或，所述R3和R4为相同的基团；
    和/或，所述R3、R4、R3X和R4X为相同的基团；
    和/或，所述R1和R2各自独立地连接于O原子所连碳原子的间位；
    和/或，R3和R4连接于N原子所连碳原子的对位。
  10. 根据权利要求1所述的有机电致发光器件，其中，所述窄光谱荧光材料包括以下化合物A1至A268中的一种或多种：













  11. 根据权利要求1所述的有机电致发光器件，其中，所述主体材料包括以下化合物PH-1至PH-85中的一种或多种：



  12. 根据权利要求1所述的有机电致发光器件，其中，所述磷光敏化剂包括以下化合物RPD-1至RPD-29中的一种或多种：

  13. 根据权利要求1或12所述的有机电致发光器件，其中，所述磷光敏化层中，所述磷光敏化剂的质量含量为0.1-50％。
  14. 根据权利要求13所述的有机电致发光器件，其中，所述磷光敏化层中，所述磷光敏华剂的质量含量为0.1-15％。
  15. 根据权利要求1或12所述的有机电致发光器件，其中，所述磷光敏化层中，所述窄光谱荧光材料的质量含量为0.1-30％。
  16. 根据权利要求15所述的有机电致发光器件，其中，所述磷光敏化层中，所述窄光谱荧光材料的质量含量为0.1-5％。
  17. 一种显示装置，其中，包括权利要求1-16任一项所述的有机电致发光器件。
PCT/CN2023/077228 2022-11-14 2023-02-20 有机电致发光器件及显示装置 WO2024103552A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN112820834A (zh) * 2019-11-15 2021-05-18 乐金显示有限公司 有机发光装置和使用该有机发光装置的显示装置
CN113540371A (zh) * 2021-06-07 2021-10-22 清华大学 一种有机电致发光器件和显示装置
JP2022088008A (ja) * 2020-12-02 2022-06-14 出光興産株式会社 有機エレクトロルミネッセンス素子及び電子機器

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112820834A (zh) * 2019-11-15 2021-05-18 乐金显示有限公司 有机发光装置和使用该有机发光装置的显示装置
JP2022088008A (ja) * 2020-12-02 2022-06-14 出光興産株式会社 有機エレクトロルミネッセンス素子及び電子機器
CN113540371A (zh) * 2021-06-07 2021-10-22 清华大学 一种有机电致发光器件和显示装置

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