Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/10—Inorganic compounds or compositions
  • C30B29/16—Oxides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/40—Oxides
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
  • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
  • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
  • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/10—Heating of the reaction chamber or the substrate
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/12—Substrate holders or susceptors
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
  • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
  • H10P14/2901—Materials
  • H10P14/2921—Materials being crystalline insulating materials
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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
  • H10P14/2924—Structures
  • H10P14/2925—Surface structures
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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
  • H10P14/34—Deposited materials, e.g. layers
  • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
  • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
  • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
  • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal

Definitions

• the present invention relates to a film forming method, a film forming apparatus, a susceptor, and an ⁇ -gallium oxide film.
• Patent Document 1 discloses an apparatus in which a substrate placed on a substantially semicircular susceptor is tilted in a horizontal furnace to form a film.
• Patent Document 2 discloses a film forming apparatus that performs film forming by horizontally supplying raw material mist to a substrate fixed to a flat flow path called a fine channel.
• Patent Document 3 discloses a film forming apparatus in which a film forming nozzle equipped with a raw material solution spouting part and an exhaust part is arranged to face the film forming surface of a substrate, and performs film forming while moving parallel to the substrate.
• Patent Document 4 describes a film forming method in which a raw material mist is transported into a reaction vessel using a carrier gas, and a swirling flow is further generated to cause the mist to react with a substrate.
• the present invention has been made to solve the above problems, and aims to provide a film forming method, a film forming apparatus, and a susceptor that can uniformly and stably produce a high quality film on the surface of a large diameter substrate. purpose.
• Another object of the present invention is to provide an ⁇ -gallium oxide film of higher quality than before.
• the present invention has been made to achieve the above object, and includes a step of atomizing a raw material solution to form a raw material mist, a step of mixing the raw material mist and a carrier gas to form a mixture, a step of placing the substrate on a mounting part of a susceptor; a step of supplying the mixture from the atomizing means to the substrate to form a film on the substrate by a thermal reaction; and a step of forming the mixture after the film formation.
• a step of evacuating the mixture with an exhaust means the step of supplying the mixture from the atomization means to the substrate and forming a film on the substrate by a thermal reaction
• a film forming method characterized in that at least a part of the substrate is supplied to the surface of the substrate from a smooth portion adjacent to the placement portion and having a surface roughness of 200 ⁇ m or less.
• a high-quality film can be uniformly and stably produced on the surface of a large-diameter substrate.
• the mixture containing the raw material mist is supplied to the substrate while being maintained in a laminar flow, suppressing the generation and abnormal growth of powder.
• High-quality membranes can be stably manufactured.
• the surface roughness can be set to 150 ⁇ m or less.
• the height difference between the surface of the smooth portion and the surface of the substrate placed on the mounting portion can be set to ⁇ 1 mm or more and +1 mm or less.
• the mixture can be more stably maintained in a laminar flow, and a high-quality film can be stably and uniformly produced.
• the angle between the surface of the smooth portion and the direction in which the air-fuel mixture flows into the smooth portion can be 0° or more and 60° or less.
• the present invention has been made to achieve the above object, and includes a carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and a method for supplying the raw material mist and the carrier.
• a film forming apparatus comprising: a film forming section that supplies a mixture of gases to a substrate to form a film; and a heating means capable of heating the substrate;
• the susceptor has a susceptor equipped with a placing part on which the susceptor is placed, and the susceptor is provided with a smooth part adjacent to the placing part through which at least a part of the air-fuel mixture flows, and the smooth part has a surface roughness.
• a film forming apparatus characterized in that the film thickness is 200 ⁇ m or less.
• a high quality film can be uniformly and stably produced on the surface of a large diameter substrate.
• the mixture containing the raw material mist is supplied to the substrate while being maintained in a laminar flow, suppressing the generation and abnormal growth of powder, and thus producing large diameter
• a high quality film can be stably produced on the substrate surface.
• the surface roughness may be 150 ⁇ m or less.
• the height difference between the surface of the smooth portion and the surface of the substrate placed on the mounting portion may be ⁇ 1 mm or more and +1 mm or less.
• the angle between the surface of the smooth portion and the direction in which the air-fuel mixture flows into the smooth portion may be greater than or equal to 0° and less than or equal to 60°.
• the present invention has been made to achieve the above object, and includes a carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and a method for supplying the raw material mist and the carrier.
• a susceptor having a mounting part on which the substrate is placed in a film forming apparatus including a film forming part that supplies a mixture of gases to the substrate to form a film, and a heating means capable of heating the substrate.
• a susceptor characterized in that it is provided with a smooth part adjacent to the placement part, through which at least a part of the air-fuel mixture flows, and the surface roughness of the smooth part is 200 ⁇ m or less. I will provide a.
• a high quality film can be uniformly and stably produced on the surface of a large diameter substrate.
• the mixture containing the raw material mist is supplied to the substrate while being maintained in a laminar flow, suppressing the generation and abnormal growth of powder, so that it can be used on large-diameter substrate surfaces. This makes it possible to stably produce high-quality membranes.
• the surface roughness may be 150 ⁇ m or less.
• the surface roughness of the smooth part is 200 ⁇ m or less
• the height difference between the surface of the smooth part and the surface of the substrate placed on the mounting part is -1 mm or more and +1 mm or less. I can do it.
• the present invention has been made to achieve the above object, and is an ⁇ -gallium oxide film formed on substantially the entire surface of a c-plane sapphire substrate having a diameter of 4 inches or more, the ⁇ -gallium oxide film having a diameter of 4 inches or more.
• an ⁇ -gallium oxide film characterized in that the half width of the rocking curve of the plane X-ray diffraction peak is 9.5 seconds or less, and the film thickness distribution is ⁇ 9% or less.
• the present invention has been made to achieve the above object, and is formed on almost the entire surface of a c-plane sapphire substrate with a diameter of 4 inches or more, has a foreign matter density of 1.1 cm -2 or less, and has a film thickness distribution.
• an ⁇ -gallium oxide film characterized in that the ⁇ -gallium oxide film is ⁇ 9% or less.
• the film forming method of the present invention it is possible to stably manufacture a high quality film, and it is possible to form a film with high productivity.
• the film forming apparatus and susceptor of the present invention it is possible to stably produce a high quality film, and it is possible to form a film with high productivity.
• the ⁇ -gallium oxide film of the present invention has higher quality than the conventional film.
• FIG. 1 is a diagram showing one form of a film forming apparatus according to the present invention.
• 1 is a diagram showing one form of a susceptor of a film forming apparatus according to the present invention. They are a diagram (a) showing another form of the susceptor of the film forming apparatus according to the present invention, and a diagram (b) showing still another form. It is a figure which shows one further another form of the susceptor of the film-forming apparatus based on this invention. It is a figure which shows one further another form of the susceptor of the film-forming apparatus based on this invention.
• FIG. 3 is a diagram showing one form of the flow of air-fuel mixture to a substrate placed on a susceptor of the film forming apparatus according to the present invention. Examples of various irregularities accompanied by abnormal growth on the film surface are shown when microscopically observing white turbidity. Other examples of various irregularities accompanied by abnormal growth on the film surface that are observed when clouding is observed microscopically are shown below.
• a step of atomizing a raw material solution to form a raw material mist a step of mixing the raw material mist and a carrier gas to form a mixture
• a step of forming a mixture with a substrate placing the mixture on a mounting portion of a susceptor; supplying the mixture from an atomizing means to the substrate to form a film on the substrate by thermal reaction; and exhausting the mixture after the film formation.
• a step of supplying the mixture from the atomizing means to the substrate and forming a film on the substrate by a thermal reaction comprising: To stably produce a high-quality film by a film forming method characterized in that a portion of the film is supplied to the surface of the substrate from a smooth part adjacent to the mounting part and having a surface roughness of 200 ⁇ m or less. It becomes possible to perform film formation with high productivity, and A carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and a film forming method for supplying a mixture of the raw material mist and the carrier gas to a substrate to form a film.
• a film forming apparatus comprising a film part and a heating means capable of heating the substrate, the film forming part having a susceptor including a placing part on which the substrate is placed, is provided with a smooth part adjacent to the placement part through which at least a part of the air-fuel mixture flows, and the surface roughness of the smooth part is 200 ⁇ m or less. , it becomes possible to stably manufacture a high-quality film, and it becomes possible to form a film with high productivity;
• a carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and a film forming method for supplying a mixture of the raw material mist and the carrier gas to a substrate to form a film.
• a susceptor having a mounting part on which the substrate is placed in a film forming apparatus including a film part and a heating means capable of heating the substrate, the susceptor being adjacent to the mounting part and containing at least one of the air-fuel mixtures.
• the ⁇ -gallium oxide film which is formed on almost the entire surface of the sapphire substrate and has a foreign matter density of 1.1 cm -2 or less and a film thickness distribution of ⁇ 9% or less, has a higher quality than before. It was discovered that an ⁇ -gallium oxide film was obtained, and the present invention was completed.
• FIG. 1 shows one embodiment of a film forming apparatus according to the present invention.
• the film forming apparatus according to the present invention is not limited to the film forming apparatus shown in FIG.
• the film forming apparatus 1 includes a mechanism 50 for forming an air-fuel mixture, a film forming section 30, and an exhaust means 40.
• the mechanism 50 for forming an air-fuel mixture includes a carrier gas supply means 10 and an atomization means 20.
• the carrier gas supply means 10 and the atomization means 20 are connected by a pipe 101, and the carrier gas 111 is supplied from the carrier gas supply means 10 to the atomization means 20, and a mixture is formed in the atomization means 20.
• the atomizing means 20 and the film forming chamber 31 of the film forming section 30 are connected by a pipe 102, and a mixture 112 is supplied from the atomizing means 20 to the film forming chamber 31 of the film forming section 30.
• the film forming chamber 31 of the film forming section 30 and the exhaust means 40 are connected by a pipe 103, and the air is exhausted from the film forming chamber 31 of the film forming section 30 to the exhaust means 40.
• the pipe 102 is not particularly limited as long as it has sufficient stability against the raw material solution 21 used and the temperature at which the film forming section 30 and the pipe 102 interact, and may be made of resin or metal depending on the purpose. Piping can be made of aluminum, glass, ceramic, or a combination of these materials.
• the piping 101 and the piping 103 are also not particularly limited as long as they have sufficient stability.
• Carrier gas supply means 10 supplies carrier gas 111 toward atomization means 20 .
• the carrier gas 111 is not particularly limited, and for example, in addition to air, oxygen, and ozone, inert gases such as nitrogen and argon, or reducing gases such as hydrogen gas and forming gas are preferably used.
• the number of types of carrier gas 111 may be one, or two or more types.
• the flow rate of the carrier gas 111 may be appropriately set depending on the size of the substrate 33 and the size of the film forming section 30, and can be set to about 0.01 to 100 L/min, for example.
• a diluent gas to adjust the ratio of the raw material mist 22 and the carrier gas 111.
• the flow rate of the diluent gas may be set appropriately, and can be set to, for example, 0.1 to 10 times the flow rate of the carrier gas.
• the diluent gas may be supplied to the downstream side of the atomizing means 20.
• the diluent gas may be the same as the carrier gas 111, or a different one may be used.
• a raw material solution 21 is stored in the atomizing means 20 as a raw material.
• the raw material solution 21 is not particularly limited as long as it can be atomized (also referred to as "mistable"), and may be an aqueous solution containing raw materials depending on the purpose, alcohols, ketones, esters, ethers, or amides. , halogenated solvents, and organic solvent solutions such as aromatic compounds can be applied.
• the raw material solution 21 is atomized using known means to form a raw material mist 22.
• a carrier gas 111 is supplied to the atomizing means 20 and mixed with the raw material mist 22 to form a mixture 112.
• Atomization of the raw material solution 21 is not particularly limited as long as the raw material solution 21 can be atomized or dropletized, and any known means may be used, but in the present invention, it is preferable to use ultrasound. Mists or droplets obtained using ultrasound are preferable because they have an initial velocity of zero and are suspended in the air.For example, rather than being sprayed like a spray, they can be suspended in space and transported as a gas. This is very suitable because it is a possible mist and there is no damage caused by collision energy.
• the droplet size is not particularly limited, and may be a droplet of several mm, but is preferably 50 ⁇ m or less, more preferably 0.1 to 10 ⁇ m.
• the atomizing means 20 can include a temperature control section not shown in the figure.
• the temperature control unit may be one that directly or indirectly controls the temperature of the raw material solution 21, may be one that performs heat exchange using a liquid or gas heat medium, or may be one that performs heat exchange using a liquid or gas heat medium. ) effect may be applied.
• the heating medium a wide variety of known heating mediums can be used, and for example, liquids such as water, glycols, alcohols, and silicone oils, and gaseous heating mediums such as air, helium, and fluorocarbons are suitably used.
• the film forming section 30 includes a film forming chamber 31 and a heating means 34.
• a susceptor 32 having a triangular shape in side view is arranged within the film forming chamber 31 .
• a substrate 33 is placed on the oblique surface of the susceptor 32.
• a pipe 102 is connected to one wall, a pipe 103 is connected to the other wall, and the mixture 112 is transported by the pipe 102 and supplied to the film forming chamber 31 .
• the film forming chamber 31 is not particularly limited as long as it has sufficient stability against the raw material solution 21 used and the operating temperature, and may be made of resin, metal, glass, ceramic, or any of these materials depending on the purpose. It can be a combination of materials. Film formation may be performed under atmospheric pressure, increased pressure, or reduced pressure, but is preferably performed under atmospheric pressure in terms of equipment cost and productivity.
• FIG. 2 shows one embodiment of the susceptor of the film forming apparatus according to the present invention.
• FIG. 2 shows one form of a susceptor in which the air-fuel mixture 112 always flows in one direction (y direction) on the susceptor 32.
• the susceptor 32 includes a circular mounting portion 32b at the center of the surface.
• the mounting portion 32b is capable of mounting the substrate 33.
• the structure, material, etc. of the susceptor 32 are not particularly limited, as long as they have sufficient stability depending on the characteristics and temperature conditions of the raw material solution 21 used.
• the structure of the susceptor 32 may include a mechanism for holding the substrate 33.
• a known substrate holding method such as a vacuum chuck, mechanical clamp, or electrostatic chuck can be applied.
• metals such as aluminum and stainless steel may be used, and when forming a film at a higher temperature exceeding the heat resistance temperature of these metals, or when using acidic or alkaline raw materials, Hastelloy ( (registered trademark), soda lime glass, borosilicate glass, quartz, silicon carbide, or ceramics such as silicon nitride and aluminum nitride.
• the susceptor 32 is provided with a smooth portion 32a at a lower portion adjacent to the mounting portion 32b.
• the smooth portion 32a is installed adjacent to the mounting portion 32b on the upstream side of the mounting portion 32b, that is, on the side where the air-fuel mixture 112 flows into the susceptor 32.
• the smooth portion 32a has a smooth surface.
• At least a portion of the air-fuel mixture 112 flows through the smooth portion 32a. That is, part of the air-fuel mixture 112 supplied to the film forming chamber 31 directly flows toward the surface of the substrate 33 as it is, and another part is supplied to the surface of the substrate 33 along the smooth portion 32a. In this process, the mixture 112 reacts on the substrate 33, and a film is formed on the substrate 33.
• the smooth portion 32a is preferably provided so as to include at least a region in contact with both ends of the mounting portion 32b (or the substrate (not shown)) in the x direction. This makes it possible to supply the air-fuel mixture 112 to the substrate surface while always keeping it in a laminar flow, thereby enabling stable and good crystal growth on the substrate surface.
• the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion 32a is set to be 200 ⁇ m or less. Thereby, the air-fuel mixture 112 supplied to the surface of the substrate 33 along the smooth portion 32a can be made to flow with less turbulence, and a uniform and high-quality film can be stably formed.
• the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion 32a exceeds 200 ⁇ m, the air-fuel mixture becomes turbulent, and the adhesion of particles becomes significant, and the appearance becomes cloudy due to abnormal growth. Microscopically, cloudiness is observed as various irregularities accompanied by abnormal growth on the film surface, as shown in FIGS. 7 and 8, for example.
• Such abnormal growth is often caused by abnormal nucleation due to adhesion of foreign matter or deviation in film composition.
• the degree of damage can be determined visually, but it can also be quantified, for example, by measuring reflectance or transmittance of visible light, or by measuring surface irregularities.
• a wide variety of known methods can be applied to these measurements, and a general spectrophotometer, stylus-type surface profile measuring device, or atomic force microscope is suitably used.
• determination can be made based on the specular reflectance of visible light incident on the film surface at a certain angle.
• the regular reflectance can be 15% or less under the conditions of an incident light wavelength of 633 nm and an incident angle of 45°.
• Specular reflectance is the difference between the incident light and the reflected light when the light is incident on the sample (film) surface from the light source and reflected, and the light is received by the light receiving probe at the same reflection angle as the incident angle. is the energy ratio of
• particles in the present invention include those that are incorporated into the film and are integrated with the film, and those that adhere to the film surface as foreign matter, and refer to those that are observed as particles when the surface of the film is observed. , for example, using light scattering.
• the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion 32a is preferably 150 ⁇ m or less.
• the lower limit is not particularly limited, but may be, for example, 0.1 nm.
• the surface roughness (arithmetic mean roughness) Ra was determined using a laser microscope or confocal microscope such as the stylus method, atomic force microscopy (AFM) method, optical interference method, confocal method, or image synthesis method by moving the focal point. This refers to the value calculated based on JIS B 0601 using the surface shape measurement results by a non-contact measurement method.
• the smooth portion 32a may be made of the same material as the susceptor, or may be made of a different material. Specifically, alloys such as aluminum, stainless steel, or Hastelloy (registered trademark), soda lime glass, borosilicate glass, quartz, silicon carbide, or ceramics such as silicon nitride or aluminum nitride may be used. For example, in the case of borosilicate glass, the smoothness of the smooth portion 32a can be easily achieved by lapping the surface with diamond abrasive grains, and then giving it a mirror finish by chemical mechanical polishing (CMP) using colloidal silica. can get. Further, the smooth portion 32a may be kept at a lower temperature than the substrate mounting portion 32b.
• CMP chemical mechanical polishing
• the temperature of the smooth portion 32a at this time may be appropriately optimized depending on the type of raw material mist and its various film forming conditions, but when water is used as the solvent for the raw material mist, it is generally about 30°C to 100°C. It's good to do that.
• the method of cooling the smooth portion 32a is not particularly limited, and any known temperature control means may be applied. For example, a refrigerant (not shown in the figure) may be brought into contact with the inside or back of the smooth portion 32a to exchange heat. Cooling may be performed using a Peltier element.
• the substrate 33 is capable of supporting the film to be formed.
• the material of the substrate 33 is not particularly limited, and may be a known material, and may be an organic compound, an inorganic substance, or an inorganic compound.
• Examples include, but are not limited to, lithium oxide, lithium niobate, gallium oxide, SiC, ZnO, and GaN.
• the size of the substrate 33 is preferably 5 cm 2 or more in area, more preferably 10 cm 2 or more, and preferably 50 to 2000 ⁇ m in thickness, more preferably 100 to 800 ⁇ m.
• the shape of the substrate 33 is circular in plan view, as can be inferred from the shape of the mounting section shown in FIG. However, the shape is not limited to this, and may be a rectangular shape or a polygonal shape in a plan view. Note that when the shape and size of the substrate 33 are changed, the shape and size of the mounting portion 32b are changed in accordance with the shape and size of the substrate 33.
• the surface roughness (arithmetic mean roughness) Ra_sub of the surface of the substrate 33 is preferably equal to or less than the surface roughness (arithmetic mean roughness) Ra_cor of the surface of the smooth portion 32a. Thereby, the air-fuel mixture can be maintained in a laminar flow even on the substrate surface. If the surface roughness (arithmetic mean roughness) Ra_sub of the surface of the substrate 33 is larger than the surface roughness (arithmetic mean roughness) Ra_cor of the surface of the smooth portion 32a, abnormal growth on the substrate 33 is likely to occur.
• the value of the surface roughness (arithmetic mean roughness) Ra_sub of the surface of the substrate 33 is preferably, for example, 0.05 nm or more and 1 ⁇ m or less.
• the surface of the substrate 33 obtained by processing the crystal is lapped with diamond abrasive grains, and then further processed with chemical mechanical processing using colloidal silica.
• a mirror finish can be easily obtained by polishing (CMP).
• the substrate 33 is placed on the substrate mounting portion 32b provided on the susceptor 32, and a portion of the air-fuel mixture 112 flows toward the substrate 33 along the smooth portion 32a.
• the angle ⁇ between the inflow direction of the air-fuel mixture 112 and the smooth portion 32a is not particularly limited. However, it is preferable that the angle is 0° or more and 60° or less. If the angle exceeds 60 degrees, the mixture 112 collides with the top surface of the susceptor 32 or the substrate 33, causing turbulent flow, which may cause some powder to be generated and adhere to the film surface. Then, the occurrence of such cases can be suppressed. More preferably, the angle is 0° or more and 45° or less. Note that the angle ⁇ in the form of FIG. 1 can also be said to be the inclination angle of the smooth portion 32a with respect to the horizontal plane.
• the height difference h between the surface of the substrate 33 and the surface of the smooth portion 32a is not particularly limited, it is preferably set to -1 mm or more and 1 mm or less. Within this range, the thickness uniformity at the edge of the substrate is improved, and turbulence does not occur at the edge. If there is a step difference of 1 mm or more, a film thickness distribution may occur particularly near the edge of the substrate adjacent to the smooth portion 32a.
• the positive and negative numbers here indicate the relative position of the substrate surface to be made into a smooth surface.A negative value indicates that the substrate surface is concave with respect to the smooth surface, and a positive value indicates that the substrate surface is recessed relative to the smooth surface.
• the air-fuel mixture concentrates at the edge of the substrate, resulting in a thicker film.
• the substrate surface is lower than the smooth surface, the air mixture flows over the edge of the substrate due to the step, resulting in a thinner film.
• such a structure may cause turbulence in the flow of the air-fuel mixture.
• the thickness of the film formed on the substrate can be measured by any known method, such as ellipsometry, optical interference spectroscopy, stylus method, or laser displacement method.
• exhaust means 40 Surplus portions of the mixture 112 that did not contribute to film formation and byproducts generated during the reaction of the mixture 112 on the substrate 33 are sucked out by the exhaust means 40 as a mixture after film formation and are removed from the system. Expelled outside.
• the exhaust gas from the exhaust means 40 may be treated with a detoxification device such as a particle collector, combustion device, or scrubber (not shown in the figure), or with a filter for recovering raw materials, as necessary. or a combination of these may be used.
• FIG. 1 shows a form in which one atomizing means 20 is used
• the film forming apparatus according to the present invention is not limited to this, and a plurality of atomizing means 20 may be connected in series or in parallel. can.
• each atomizing means 20 may contain different raw material solutions, or may contain the same raw material solution. Further, each raw material solution may be atomized individually and supplied to the film forming section 30 independently, or a plurality of types of raw material mist may be mixed in advance and then supplied to the film forming section 30.
• FIGS. 1 and 2 show a form in which the mixture 112 flows in one direction from the supply side to the exhaust side of the film forming chamber 31 with respect to the substrate 33, the present invention is not limited to this.
• the configuration can be made in accordance with the method of supplying the air 112.
• the film forming method according to the present invention includes a raw material mist forming step, a mixture forming step, a substrate mounting step, a film forming step, and an exhaust step.
• the raw material mist forming step is a step of atomizing the raw material solution 21 to form the raw material mist 22.
• the mixture forming step is a step of mixing the raw material mist 22 and the carrier gas 111 to form a mixture 112.
• the substrate mounting step is a step of mounting the substrate 33 on the mounting portion 32b of the susceptor 32.
• the film forming step is a step in which the mixture 112 is supplied from the atomizing means 20 to the substrate 33 and a film is formed on the substrate 33 by thermal reaction. In this step, at least a portion of the air-fuel mixture 112 is supplied to the surface of the substrate 33 from the smooth portion 32a adjacent to the mounting portion 32b and having a surface roughness (arithmetic mean roughness) Ra_cor of 200 ⁇ m or less.
• the exhaust step is a step in which the air-fuel mixture 112 after film formation is exhausted by the exhaust means 40.
• the mixture 112 containing the raw material mist 22 is supplied to the substrate 33 while being maintained in a laminar flow, suppressing the generation and abnormal growth of powder, so that large diameter A high quality film can be stably produced on the surface of the substrate 33.
• the surface roughness of the smooth portion 32a is 150 ⁇ m or less. This allows higher quality films to be produced more stably.
• the height difference h between the surface of the smooth portion 32a and the surface of the substrate 33 is -1 mm or more and 1 mm or less.
• the angle ⁇ between the surface of the smooth portion 32a and the direction in which the air-fuel mixture 112 flows into the smooth portion 32a is 0° or more and 60° or less.
• the second embodiment has the same configuration as the first embodiment except that the susceptor 32 shown in FIG. 3(a) was used and the susceptor 32 was intermittently rotated by 180 degrees to form a film.
• the air-fuel mixture 112 is supplied to the mounting portion 32b from above and below the plane of the paper, and accordingly, the smooth portions 32a are formed in the inflow direction of each air-fuel mixture 112. Ru.
• This configuration also allows the mixture 112 to be supplied to the surface of the substrate in a laminar flow.
• the third embodiment uses a susceptor 32 shown in FIG. 3(b), and is constructed by making a nozzle (not shown) for discharging the air-fuel mixture 112 face the susceptor 32, and changing the relative position of the nozzle and the susceptor 32 in a uniaxial direction.
• the configuration is the same as the first embodiment except that the membrane is used.
• the air-fuel mixture 112 is supplied to the mounting portion 32b from above and below the plane of the paper, and accordingly, smooth portions 32a are formed in the respective air-fuel mixture inflow directions.
• the smooth portion 32a includes at least an area excluding the mounting portion 32b from the area surrounded by the discharge opening width W and the movable length L of the nozzle.
• the discharge opening width W at this time only needs to be longer than the width of the substrate parallel to W, and can be, for example, 1.0 times or more and less than 2 times the width of the substrate, but at the nozzle end. In order to more stably suppress deterioration of film thickness distribution due to mist concentration discontinuity that tends to occur, it is more preferably 1.1 times or more and 1.5 times or less.
• the movable length L depends on the shape and configuration of the nozzle used, but generally it is sufficient that it is longer than the width of the substrate parallel to L, for example, 1.0 times or more the width of the substrate. It can be set to .5 times or less, but from the viewpoint of productivity, it is more preferably 1.2 times or less. This configuration also allows the mixture 112 to be supplied to the surface of the substrate in a laminar flow.
• the fourth embodiment uses a susceptor 32 provided with a smooth part 32a so as to surround a mounting part 32b as shown in FIG.
• the configuration is the same as the first embodiment except that the membrane is used.
• film formation is performed by continuously rotating the susceptor 32 with respect to the air-fuel mixture 112 in one direction. This configuration also allows the mixture 112 to be supplied to the surface of the substrate in a laminar flow.
• a film is formed by using a susceptor 32 provided with a smooth part 32a so as to surround a mounting part 32b as shown in FIG.
• the configuration is the same as the first embodiment except that.
• film formation is performed by supplying the air-fuel mixture 112 to the fixed susceptor 32 in the form of a swirling flow. This configuration also allows the mixture 112 to be supplied to the surface of the substrate in a laminar flow.
• the susceptor 32 of the first to fifth embodiments is provided with a circular mounting portion 32b corresponding to the circular substrate 33, the susceptor of the film forming apparatus according to the present invention is not limited to this.
• the mounting section can be adapted to support the substrates having the shapes described above.
• the substrate 33 is installed so that the film formation surface faces upward; however, the present invention is not limited to this, and the substrate 33 is installed such that the film formation surface faces downward. It is also possible to do this.
• the film forming method according to the present invention can be applied to any film type, such as a metal film, a semiconductor film, or an insulating film, but can be particularly suitably used for manufacturing a semiconductor film. Further, semiconductor films and laminates produced by the film forming method of the present invention have suppressed defects such as particles and abnormal growth, have excellent electrical properties, and are industrially useful.
• Such films and laminates can be suitably used for semiconductor devices and the like.
• the crystal layer formed as a part of the laminate may be used as it is (in the state of a laminate), or it may be peeled off from the crystal substrate etc. by a known method and then applied to a semiconductor device etc. It's okay.
• Semiconductor devices can also be classified into horizontal devices with electrodes formed on one side of the semiconductor layer (horizontal devices) and vertical devices with electrodes on both the front and back sides of the semiconductor layer (vertical devices). Therefore, at least a portion of the laminate according to the present invention can be suitably used for both horizontal and vertical devices. In particular, it is preferable to use it for vertical devices.
• Examples of the semiconductor device include a Schottky barrier diode (SBD), a metal semiconductor field effect transistor (MESFET), a high electron mobility transistor (HEMT), a metal oxide semiconductor field effect transistor (MOSFET), and a junction field effect transistor ( JFET), an insulated gate bipolar transistor (IGBT), or a light emitting diode (LED).
• SBD Schottky barrier diode
• MESFET metal semiconductor field effect transistor
• HEMT high electron mobility transistor
• MOSFET metal oxide semiconductor field effect transistor
• JFET junction field effect transistor
• IGBT insulated gate bipolar transistor
• LED light emitting diode
• ⁇ -Gallium oxide film An example of a film formed by the film forming method according to the present invention is an ⁇ -gallium oxide film.
• a specific ⁇ -gallium oxide film is formed on almost the entire surface of a c-plane sapphire substrate with a diameter of 4 inches or more, and the half-width of the rocking curve of the (0006) plane X-ray diffraction peak of the ⁇ -gallium oxide film is 9. Examples include those in which the time is .5 seconds or less and the film thickness distribution is ⁇ 9% or less. Note that "substantially the entire surface” as used herein refers to an area of 80% or more of the total area of the substrate surface.
• the lower limit is, for example, more than 0 seconds.
• the film thickness distribution is calculated by calculating the film thickness at multiple points within the film surface using a known method such as optical interference spectroscopy, and dividing the difference between the maximum and minimum values by twice the average value. can.
• the upper limit of the diameter of the c-plane sapphire substrate is not particularly limited, but is, for example, about 12 inches (about 30 cm).
• an ⁇ -gallium oxide film is formed on substantially the entire surface of a c-plane sapphire substrate with a diameter of 4 inches or more, and has a foreign matter density of 1.1 cm ⁇ 2 or less and a film thickness distribution of ⁇ 9% or less. can be exemplified.
• a high-quality ⁇ -gallium oxide film with a low density of foreign particles is formed on substantially the entire surface of a large-diameter substrate.
• the foreign matter here refers to a convex object present on the film surface, and particularly includes both particles and abnormally grown grains, and can be detected by a known wafer defect inspection device. Note that the lower the foreign matter density, the better, so the lower limit is, for example, 0 cm -2 . Further, the upper limit of the diameter of the c-plane sapphire substrate is not particularly limited, but is, for example, about 12 inches.
• Example 1 In the film forming apparatus shown in FIG. 1, the ⁇ -gallium oxide film was formed according to the following procedure.
• a gas cylinder filled with nitrogen gas was used to supply carrier gas.
• the gas cylinder and the atomization device were connected with a urethane resin tube, and the atomization device and the film forming chamber were further connected with a quartz pipe.
• a c-plane single crystal sapphire substrate having a thickness of 0.65 mm and a diameter of 4 inches (approximately 10 cm) was placed on a SiC susceptor having the surface structure shown in FIG. 2 and having an inclination angle ( ⁇ ) of 35°.
• the height difference h between the smooth portion surface and the substrate surface was 0 mm.
• the surface roughness (arithmetic mean roughness) Ra_cor of the smooth part provided on the susceptor was measured at five points within the plane of the smooth part using an AFM (Nanosurf Nanite AFM), the average value was 0.55 ⁇ m. .
• the surface roughness (arithmetic mean roughness) Ra_sub of the sapphire substrate was measured using AFM at five points in the cross direction passing through the center of the substrate, and the average value was 0.08 nm.
• gallium acetylacetonate was dissolved at a ratio of 0.05 mol/L in a dilute hydrochloric acid aqueous solution containing 1% by volume of hydrochloric acid with a concentration of 34%, and this was added to an atomization device (atomization means). Filled. Next, ultrasonic vibrations were propagated through water to the raw material solution in the atomization device using an ultrasonic diaphragm, and the raw material solution was atomized (made into a mist). Next, nitrogen gas was added to the raw material solution container in the atomization device (atomization means) at a flow rate of 20 L/min to form a mixture of mist and nitrogen gas.
• the substrate placed on the mounting portion of the susceptor was heated to a substrate temperature of 450°C.
• the air-fuel mixture was supplied to the film formation chamber, and film formation was performed for 60 minutes. After that, the supply of nitrogen gas was stopped, and the supply of the mixture to the film forming chamber was stopped.
• the produced film had a clear appearance in the area except for the outer peripheral width of 5 mm on the film forming surface.
• X-ray diffraction measurement (Rigaku SmartLab) confirmed that it was ⁇ -phase Ga 2 O 3 ( ⁇ -gallium oxide film).
• Rocking curves on the ⁇ -Ga 2 O 3 (0006) plane were measured at five points in the cross direction passing through the center of the substrate, and the half width was evaluated.
• a four-crystal monochromator that combines two channel-cut crystals is used to increase the monochromaticity of X-rays and perform measurements with higher precision.
• Other measurement conditions are as follows.
• the density of foreign particles (diameter 0.3 ⁇ m or more) in a region excluding the outer peripheral width of 5 mm on the film forming surface was evaluated using a substrate inspection machine (KLA candela-CS10).
• KLA candela-CS10 a substrate inspection machine
• the foreign matter here refers to a convex object existing on the film surface, and particularly includes both particles and abnormally grown grains.
• the thickness of the produced film was measured at 21 points within the film surface using optical interference spectroscopy (Filmetrics F50), and the film thickness distribution was calculated by dividing the difference between the maximum and minimum values by twice the average value. did.
• Example 2 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was set to 183 ⁇ m.
• the produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 1 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 220 ⁇ m. In the appearance of the produced film, some cloudiness was observed from the outer circumference of the substrate adjacent to the smooth portion to the inside. It was confirmed by X-ray diffraction measurement that it was ⁇ -phase Ga 2 O 3 . Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 3 Film formation was performed in the same manner as in Example 1, except that the height difference h in Example 1 was set to 0.85 mm (the substrate surface was higher than the smooth surface). The produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 4 Film formation was performed in the same manner as in Example 1, except that the height difference h in Example 1 was set to ⁇ 0.85 mm (the substrate surface was lower than the smooth surface). The produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 2 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 220 ⁇ m and the height difference h was 1.2 mm. In the external appearance of the produced film, white cloudiness was observed in a wide range from the outer peripheral part of the substrate adjacent to the smooth part to the inside. It was confirmed by X-ray diffraction measurement that it was ⁇ -phase Ga 2 O 3 . Thereafter, the membrane was evaluated in the same manner as in Example 1.
• the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 220 ⁇ m and the height difference h was 1.2 mm.
• the membrane was evaluated in the same manner as in Example 1.
• Example 3 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 220 ⁇ m and the height difference h was ⁇ 1.2 mm. In the external appearance of the produced film, white cloudiness was observed in a wide range from the outer peripheral part of the substrate adjacent to the smooth part to the inside. It was confirmed by X-ray diffraction measurement that it was ⁇ -phase Ga 2 O 3 . Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 5 Film formation was performed in the same manner as in Example 1, except that the inclination angle ( ⁇ ) was 55°. The produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 4 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 220 ⁇ m and the inclination angle ( ⁇ ) was 80°. In the external appearance of the produced film, white cloudiness was observed in a wide range from the outer peripheral part of the substrate adjacent to the smooth part to the inside. It was confirmed by X-ray diffraction measurement that it was ⁇ -phase Ga 2 O 3 . Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 6 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 200 ⁇ m.
• the produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1.
• Example 7 Film formation was performed in the same manner as in Example 1, except that the surface roughness (arithmetic mean roughness) Ra_cor of the smooth portion was 150 ⁇ m. The produced film was clear in appearance in a region excluding the outer peripheral width of 5 mm on the film forming surface, and was confirmed to be ⁇ -phase Ga 2 O 3 by X-ray diffraction measurement. Thereafter, the membrane was evaluated in the same manner as in Example 1. Table 1 shows the evaluation results of Examples 1, 2, 3, 4, 5, 6, and 7 and Comparative Examples 1, 2, 3, and 4.
• the film produced by the film forming method according to the present invention has a low half-width (good crystal orientation), stable film growth with good film thickness distribution, and a low foreign matter density.
• the crystal orientation deteriorated with clouding due to abnormal growth, and the film thickness distribution and foreign matter density clearly increased. It is thought that as a result of turbulence occurring in the air mixture due to the increase in surface roughness of the smooth portion, abnormal growth due to abnormal nucleation and foreign matter adhesion due to precipitation of raw material solids were promoted.
• the method includes the step of supplying the mixture from the atomizing means to the substrate and forming a film on the substrate by thermal reaction, the step of supplying at least a part of the mixture to the substrate adjacent to the placement part.
• a film forming method characterized in that the film is supplied to the surface of the substrate from a smooth portion having a surface roughness of 200 ⁇ m or less.
• a carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and supplying a mixture of the raw material mist and the carrier gas to the substrate.
• a film forming apparatus comprising a film forming section that performs a film and a heating means capable of heating the substrate, the film forming section having a susceptor equipped with a mounting section on which the substrate is placed. , the susceptor is provided with a smooth part adjacent to the placement part through which at least a part of the air-fuel mixture flows, and the smooth part has a surface roughness of 200 ⁇ m or less. Film deposition equipment.
• [6] The film forming apparatus according to [5] above, wherein the surface roughness is 150 ⁇ m or less.
• a carrier gas supply means for supplying a carrier gas, an atomization means for atomizing a raw material solution to generate a raw material mist, and supplying a mixture of the raw material mist and the carrier gas to a substrate.
• a susceptor having a mounting part on which the substrate is placed in a film forming apparatus including a film forming part that performs a film and a heating means capable of heating the substrate, A smooth part is provided adjacent to the placement part, through which at least a part of the air-fuel mixture flows, A susceptor, wherein the smooth portion has a surface roughness of 200 ⁇ m or less.
• the surface roughness of the smooth portion is 200 ⁇ m or less, and the height difference between the surface of the smooth portion and the surface of the substrate placed on the mounting portion is ⁇ 1 mm or more and +1 mm or less.
• An ⁇ -gallium oxide film having a value range of 9.5 seconds or less and a film thickness distribution of ⁇ 9% or less.

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• 2023
  • 2023-08-14 CN CN202380061363.3A patent/CN119768894A/zh active Pending
  • 2023-08-14 WO PCT/JP2023/029452 patent/WO2024043134A1/ja not_active Ceased
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