KR20250057789A - 성막 방법, 성막 장치, 서셉터, 및 α－산화 갈륨막 - Google Patents

성막 방법, 성막 장치, 서셉터, 및 α－산화 갈륨막 Download PDF

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KR20250057789A
KR20250057789A KR1020257005527A KR20257005527A KR20250057789A KR 20250057789 A KR20250057789 A KR 20250057789A KR 1020257005527 A KR1020257005527 A KR 1020257005527A KR 20257005527 A KR20257005527 A KR 20257005527A KR 20250057789 A KR20250057789 A KR 20250057789A
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substrate
film
less
film forming
raw material
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히로시 하시가미
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020257005527A 2022-08-26 2023-08-14 성막 방법, 성막 장치, 서셉터, 및 α－산화 갈륨막 Pending KR20250057789A (ko)

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JPJP-P-2022-135279 2022-08-26
JP2022135279 2022-08-26
PCT/JP2023/029452 WO2024043134A1 (ja) 2022-08-26 2023-08-14 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜

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KR20250057789A true KR20250057789A (ko) 2025-04-29

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US (1) US20260055504A1 (https=)
EP (1) EP4579715A1 (https=)
JP (1) JPWO2024043134A1 (https=)
KR (1) KR20250057789A (https=)
CN (1) CN119768894A (https=)
TW (1) TW202442926A (https=)
WO (1) WO2024043134A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2016027636A (ja) 2014-06-27 2016-02-18 株式会社Flosfia サセプタ
KR20160051559A (ko) 2014-11-03 2016-05-11 전북대학교산학협력단 신규 하이드로젠퍼옥사이드를 활성화하는 항산화 화합물 및 이를 이용한 약학 조성물
JP2016146442A (ja) 2015-01-29 2016-08-12 株式会社Flosfia 成膜装置および成膜方法

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JP4909494B2 (ja) * 2003-12-26 2012-04-04 ルネサスエレクトロニクス株式会社 半導体製造装置および半導体装置の製造方法
WO2016051559A1 (ja) 2014-10-01 2016-04-07 東芝三菱電機産業システム株式会社 成膜装置
JP7130962B2 (ja) * 2018-01-11 2022-09-06 株式会社デンソー 成膜方法及び成膜装置
JP7105703B2 (ja) * 2019-01-08 2022-07-25 信越化学工業株式会社 酸化物半導体膜、積層体及び酸化物半導体膜の製造方法
JP7159449B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
JP6784871B1 (ja) * 2019-04-24 2020-11-11 日本碍子株式会社 半導体膜
JP7212890B2 (ja) * 2019-06-05 2023-01-26 株式会社デンソー 酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
JP7170617B2 (ja) * 2019-10-24 2022-11-14 信越化学工業株式会社 ガリウム前駆体の製造方法およびこれを用いた積層体の製造方法
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7737685B2 (ja) * 2020-12-12 2025-09-11 高知県公立大学法人 Ｇａ２Ｏ３薄膜の製造方法
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2016027636A (ja) 2014-06-27 2016-02-18 株式会社Flosfia サセプタ
KR20160051559A (ko) 2014-11-03 2016-05-11 전북대학교산학협력단 신규 하이드로젠퍼옥사이드를 활성화하는 항산화 화합물 및 이를 이용한 약학 조성물
JP2016146442A (ja) 2015-01-29 2016-08-12 株式会社Flosfia 成膜装置および成膜方法

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