CN119768894A - 成膜方法、成膜装置、基座及α-氧化镓膜 - Google Patents

成膜方法、成膜装置、基座及α-氧化镓膜 Download PDF

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Publication number
CN119768894A
CN119768894A CN202380061363.3A CN202380061363A CN119768894A CN 119768894 A CN119768894 A CN 119768894A CN 202380061363 A CN202380061363 A CN 202380061363A CN 119768894 A CN119768894 A CN 119768894A
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substrate
film
film forming
mixed gas
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Chinese (zh)
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桥上洋
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
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  • Chemical Vapour Deposition (AREA)
CN202380061363.3A 2022-08-26 2023-08-14 成膜方法、成膜装置、基座及α-氧化镓膜 Pending CN119768894A (zh)

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JP2022135279 2022-08-26
JP2022-135279 2022-08-26
PCT/JP2023/029452 WO2024043134A1 (ja) 2022-08-26 2023-08-14 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜

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US (1) US20260055504A1 (https=)
EP (1) EP4579715A1 (https=)
JP (1) JPWO2024043134A1 (https=)
KR (1) KR20250057789A (https=)
CN (1) CN119768894A (https=)
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JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP6867637B2 (ja) 2014-06-27 2021-04-28 株式会社Flosfia サセプタ
WO2016051559A1 (ja) 2014-10-01 2016-04-07 東芝三菱電機産業システム株式会社 成膜装置
KR101765682B1 (ko) 2014-11-03 2017-08-23 전북대학교산학협력단 신규 하이드로젠퍼옥사이드를 활성화하는 항산화 화합물 및 이를 이용한 약학 조성물
JP6478103B2 (ja) 2015-01-29 2019-03-06 株式会社Flosfia 成膜装置および成膜方法
JP7130962B2 (ja) * 2018-01-11 2022-09-06 株式会社デンソー 成膜方法及び成膜装置
JP7105703B2 (ja) * 2019-01-08 2022-07-25 信越化学工業株式会社 酸化物半導体膜、積層体及び酸化物半導体膜の製造方法
JP7159449B2 (ja) * 2019-03-28 2022-10-24 日本碍子株式会社 下地基板及びその製造方法
JP6784871B1 (ja) * 2019-04-24 2020-11-11 日本碍子株式会社 半導体膜
JP7212890B2 (ja) * 2019-06-05 2023-01-26 株式会社デンソー 酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置
JP7045014B2 (ja) * 2019-08-28 2022-03-31 信越化学工業株式会社 積層構造体の製造方法
JP7170617B2 (ja) * 2019-10-24 2022-11-14 信越化学工業株式会社 ガリウム前駆体の製造方法およびこれを用いた積層体の製造方法
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置
JP7737685B2 (ja) * 2020-12-12 2025-09-11 高知県公立大学法人 Ｇａ２Ｏ３薄膜の製造方法
TWM633935U (zh) * 2021-04-07 2022-11-11 日商信越化學工業股份有限公司 積層體的製造系統、積層體以及半導體裝置

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