WO2024021683A1 - 显示面板及显示终端 - Google Patents

显示面板及显示终端 Download PDF

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Publication number
WO2024021683A1
WO2024021683A1 PCT/CN2023/087920 CN2023087920W WO2024021683A1 WO 2024021683 A1 WO2024021683 A1 WO 2024021683A1 CN 2023087920 W CN2023087920 W CN 2023087920W WO 2024021683 A1 WO2024021683 A1 WO 2024021683A1
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WO
WIPO (PCT)
Prior art keywords
film layer
undercut groove
opening
cathode
layer
Prior art date
Application number
PCT/CN2023/087920
Other languages
English (en)
French (fr)
Inventor
刘汉辰
鲜于文旭
张春鹏
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Publication of WO2024021683A1 publication Critical patent/WO2024021683A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K65/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers

Definitions

  • the present application relates to the field of display, and specifically to a display panel and a display terminal.
  • an organic light-emitting diode includes multiple light-emitting devices.
  • the multiple light-emitting devices include an anode (Anode) layer, a cathode (Cathode) layer, and an organic layer located between the anode and cathode.
  • Anode anode
  • Cathode cathode
  • organic layer located between the anode and cathode.
  • a photomask is used to make the anode layer
  • a high-precision metal mask FMM Fine Metal Mask, FMM
  • FMM high-precision metal mask
  • the common layer of the light-emitting device is formed by evaporation
  • the cathode layer is formed by the entire surface manufacturing method.
  • the light-emitting functional layer of the light-emitting device includes a red luminescent material layer, a green luminescent material layer and a blue luminescent material layer.
  • the common layer of the light-emitting device may include holes. Injection layer, hole transport layer, light emitting layer, electron transport layer and electron injection layer, etc.
  • the cathode signal is provided to the cathode through the cathode power signal line under the light-emitting common layer in the non-display area, which requires a wider setting.
  • the overlap area makes the frame of the display panel wider.
  • Embodiments of the present application provide a display panel and a display terminal with low impedance and narrow frame effects.
  • the present application provides a display panel, including a display area.
  • the display panel further includes a substrate, a plurality of pixels formed on the substrate, and at least one cathode bonding structure formed on the substrate.
  • the pixels and The cathode overlapping structures are all located in the display area, and the cathode overlapping structures are arranged adjacent to the pixels; wherein the cathode overlapping structures include:
  • a first conductive layer is provided on the substrate; the first conductive layer includes an auxiliary electrode;
  • a first film layer is provided on the first conductive layer, the first film layer includes a first opening;
  • a second film layer is disposed on the first film layer.
  • the second film layer and the first film layer form a first undercut groove at the first opening.
  • the first undercut groove and The first opening is connected, and the auxiliary electrode is exposed from the first undercut groove and the first opening;
  • a common layer for light-emitting devices formed on the second film layer and disconnected at the first undercut groove
  • the cathode is at least disposed on the common layer of the light-emitting device.
  • a conductive member is filled in the first undercut groove and the first opening and is in electrical contact with the cathode and the auxiliary electrode.
  • the cathode is disconnected at the first undercut groove, and the conductive member covers the cathode located in the first opening.
  • the conductive member also covers a portion of the surface of the cathode located outside the first opening away from the first film layer.
  • the conductive member covers the common layer of the light-emitting device located in the first opening, and the cathode also covers the conductive member.
  • a second opening is formed on the first conductive layer, and the auxiliary electrode is located on at least one side of the second opening, completely falling within the first opening. Part of the common layer of the light-emitting device is accommodated in the second opening.
  • the second film layer is also formed on the first film layer away from the first undercut groove and away from the first conductive layer, and is connected to the first film layer.
  • the first film layer forms a second undercut groove at the first opening, part of the auxiliary electrode is exposed from the second undercut groove, and the light-emitting device common layer is formed at the second undercut groove.
  • the conductive member is also filled in the second undercut groove.
  • first undercut groove and the second undercut groove are integrally formed, and the first undercut groove and the second undercut groove at least partially surround the Pixel settings.
  • the first undercut groove and the second undercut groove are arranged in parallel.
  • the cathode bonding structure further includes a third film layer, and the third film layer is disposed between the second film layer and the common layer of the light-emitting device, so The third film layer includes a third opening, the third opening is connected to and overlaps the first opening, and the material of the third film layer is an inorganic material or an organic material.
  • the first film layer and the second film layer are both made of metal materials, and in the same etching solution, the etching rate of the first film layer is greater than the etching rate of the first film layer. The rate at which the first conductive layer is etched and the rate at which the second film layer is etched.
  • the material of the first film layer is an organic material
  • the material of the second film layer is a metal material or an inorganic material.
  • this application also provides a display terminal, which includes a terminal body and a display panel, the terminal body and the display panel are combined into one body;
  • the display panel includes a display area, and the display panel also includes a substrate , a plurality of pixels formed on the substrate and at least one cathode lapping structure formed on the substrate, the pixels and the cathode lapping structure are located in the display area, the cathode lapping structure Arranged adjacent to the pixel;
  • the cathode overlap structure includes:
  • a first conductive layer is provided on the substrate; the first conductive layer includes an auxiliary electrode;
  • a first film layer is provided on the first conductive layer, the first film layer includes a first opening;
  • a second film layer is disposed on the first film layer.
  • the second film layer and the first film layer form a first undercut groove at the first opening.
  • the first undercut groove and The first opening is connected, and the auxiliary electrode is exposed from the first undercut groove and the first opening;
  • a common layer for light-emitting devices formed on the second film layer and disconnected at the first undercut groove
  • the cathode is at least disposed on the common layer of the light-emitting device.
  • a conductive member is filled in the first undercut groove and the first opening and is in electrical contact with the cathode and the auxiliary electrode.
  • the cathode is disconnected at the first undercut groove, and the conductive member covers the cathode located in the first opening.
  • the conductive member also covers a portion of the surface of the cathode located outside the first opening away from the first film layer.
  • the conductive member covers the common layer of the light-emitting device located in the first opening, and the cathode also covers the conductive member.
  • a second opening is formed on the first conductive layer, and the auxiliary electrode is located on at least one side of the second opening, completely falling within the first opening. Part of the common layer of the light-emitting device is accommodated in the second opening.
  • the second film layer is also formed on the first film layer away from the first undercut groove and away from the first conductive layer, and is connected to the first film layer.
  • the first film layer forms a second undercut groove at the first opening, part of the auxiliary electrode is exposed from the second undercut groove, and the light-emitting device common layer is formed at the second undercut groove.
  • the conductive member is also filled in the second undercut groove.
  • first undercut groove and the second undercut groove are integrally formed, and the first undercut groove and the second undercut groove at least partially surround the Pixel settings.
  • the first undercut groove and the second undercut groove are arranged in parallel.
  • the cathode bonding structure further includes a third film layer, and the third film layer is disposed between the second film layer and the common layer of the light-emitting device, so The third film layer includes a third opening, the third opening is connected to and overlaps the first opening, and the material of the third film layer is an inorganic material or an organic material.
  • the cathode lapping structure is arranged in the non-display area so that the cathode lapping structure is located on at least one side of the pixels of the display panel, that is, in the gap between the pixels. It is necessary to set up a cathode overlap structure in the non-display area, which is beneficial to reducing the width of the frame.
  • an undercut groove is formed in the first film layer and the second film layer, so that the auxiliary electrode is exposed from the undercut groove, and the common layer of the light-emitting device is disconnected at the first undercut groove, and then
  • the conductive parts are filled in the first undercut groove, and the conductive parts are electrically connected to the first conductive layer (auxiliary electrode) and the cathode (cathode) respectively.
  • the first undercut groove allows a large gap between the conductive parts, the auxiliary electrode and the cathode.
  • the electrical connection area can reduce the contact resistance between the conductive member and the auxiliary electrode and cathode.
  • Figure 1 is a schematic top view of a display panel provided by an embodiment of the present application.
  • Figure 2 is a first schematic top view of the location of the undercut groove of the cathode overlap structure of a display panel according to an embodiment of the present application;
  • FIG. 3 is a second schematic top view of the location of the undercut groove of the cathode overlap structure of a display panel according to another embodiment of the present application;
  • FIG. 4 is a second schematic top view of the location of the undercut groove of the cathode overlap structure of a display panel according to yet another embodiment of the present application;
  • Figure 5 is a schematic cross-sectional view of the first cathode overlap structure along the section line I-I of Figure 2 or along the section line III-III of Figure 4;
  • Figure 6 is a schematic cross-sectional view of the second cathode overlap structure along the section line I-I of Figure 2 or along the section line III-III of Figure 4;
  • Figure 7 is a cross-section of a third cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 8 is a schematic cross-sectional view of a fourth cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 9 is a schematic cross-sectional view of the fifth cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 10 is a schematic cross-sectional view of a sixth cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 11 is a schematic cross-sectional view of a seventh cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 12 is a schematic cross-sectional view of an eighth cathode overlap structure along the section line II-II of Figure 3 or along the section line IV-IV of Figure 4;
  • Figure 13 is a partially enlarged schematic diagram of the non-display area of the display panel provided by an embodiment of the present application.
  • Figure 14 is a schematic diagram of a display terminal according to an embodiment of the present application.
  • Figure 15 is a manufacturing method of a display panel provided by this application.
  • Figure 16 is another display panel manufacturing method provided by the present application.
  • Embodiments of the present application provide a display panel, including a display area.
  • the display panel further includes a substrate, a plurality of pixels formed on the substrate, and at least one cathode bonding structure formed on the substrate.
  • the pixels and the cathode lapping structure are both located in the display area, and the cathode lapping structure is arranged adjacent to the pixel;
  • the cathode lapping structure includes: a first conductive layer disposed on the substrate;
  • the first conductive layer includes an auxiliary electrode; a first film layer is provided on the first conductive layer, the first film layer includes a first opening; a second film layer is provided on the first film layer , the second film layer and the first film layer form a first undercut groove at the first opening, the first undercut groove is connected to the first opening, and the auxiliary electrode is connected from the The first undercut groove and the first opening are exposed;
  • the common layer of the light-emitting device is formed on the second film layer and disconnected at the first undercut groove
  • Embodiments of the present application also provide a display terminal including the foregoing display panel, and a manufacturing method for the foregoing display panel. Each is explained in detail below. It should be noted that the order of description of the following embodiments does not limit the preferred order of the embodiments.
  • Figure 1 is a top view of the display panel 100.
  • the display panel 100 includes a display area AA and a non-display area BB.
  • the display panel 100 also includes a plurality of arrays located in the display area AA.
  • Pixel 1011 include a first sub-pixel 101, a second sub-pixel 102 and a third sub-pixel 103.
  • the first sub-pixel 101, the second sub-pixel 102 and the third sub-pixel 103 may be red sub-pixels, respectively. Green sub-pixels and blue sub-pixels, but not limited thereto.
  • the display panel 100 further includes a cathode bonding structure 200 located in the display area AA, and the cathode bonding structure 200 is disposed adjacent to the pixel 1011. Specifically, the cathode lapping structure 200 is located in the gap between two adjacent pixels 1011 or in the gap between the pixel 1011 and the non-display area BB.
  • FIG. 2 is a first schematic top view of the location of the undercut groove of the cathode lapping structure 200 in FIG. 1
  • FIG. 5 is a schematic cross-sectional view of the first cathode lapping structure along the section line I-I in FIG. 2 .
  • the display panel 100 further includes a substrate 10 on which the pixels 1011 and the cathode bonding structure 200 are disposed.
  • the cathode bonding structure 200 includes a first conductive layer 20, a first film layer 30, a second film layer 40, a light-emitting device common layer 50, a cathode 60 and a conductive member 70; the first conductive layer 20 is disposed on the substrate 10, and the first conductive layer 20 is disposed on the substrate 10.
  • the film layer 30 is disposed on the first conductive layer 20, the second film layer 40 is disposed on the first film layer 30, the light-emitting device common layer 50 is disposed on the second film layer 40, the light-emitting device common layer 50 is disposed on at least On the second film layer 40, the cathode 60 is at least disposed on the common layer 50 of the light-emitting device.
  • the first conductive layer 20 includes an auxiliary electrode 210 , the first film layer 30 includes a first opening 301 , and the auxiliary electrode 210 is exposed from the first opening 301 .
  • the second film layer 40 is located on at least one side of the first opening 301.
  • the second film layer 40 and the first film layer 30 also form a first undercut groove 201 at the first opening 301.
  • the first undercut groove 201 is connected to the first undercut groove 201.
  • An opening 301 is connected.
  • the first undercut groove 201 is a part of the first opening 301 .
  • the light-emitting device common layer 50 is disconnected at the first undercut groove 201, part of the light-emitting device common layer 50 falls on the auxiliary electrode 210, part of the auxiliary electrode 210 is exposed from the first undercut groove 201, and the conductive member 70 is at least filled in
  • the first undercut groove 201 is electrically connected to the cathode 60 and the auxiliary electrode 210 .
  • the cathode 60 is electrically connected to the first conductive layer 20 through the conductive member 70 .
  • the substrate 10 can be a glass substrate or a flexible substrate, which is not limited here.
  • the material of the first film layer 30 is an organic material
  • the material of the second film layer 40 is a metal material or an inorganic material, which is beneficial to forming the first undercut groove 201 .
  • the first film layer 30 may be a pixel definition layer or a flat layer.
  • the material of the first film layer 30 may include any one of polyacrylamide (PAAm) and polydimethylsiloxane (PDMS), and the material of the first film layer 30 may be a photoresist material.
  • the second film layer 40 may be a data line layer or an anode layer.
  • both the first film layer 30 and the second film layer 40 can also be made of metal materials.
  • the first film layer 30 is etched at a faster rate than the first conductive layer 20 .
  • the material of the first conductive layer 20 may be titanium (Ti)
  • the material of the first film layer 30 may be aluminum (Al) or molybdenum (Mo)
  • the material of the second film layer may be For titanium (Ti)
  • the etching rate of aluminum or molybdenum by wet etching is greater than that of titanium.
  • the wet etching solution may include, for example, a mixture of phosphoric acid, acetic acid and nitric acid.
  • the second film layer 40 includes a third opening 401, and the third opening 401 overlaps the first opening 301, that is, the third opening 401 is connected with the first opening 301.
  • the conductive member 70 also covers the common layer 50 of the light-emitting device located in the first opening 301 .
  • the surface 71 of the conductive member 70 away from the first film layer 30 is an arc surface with a center located on one side of the substrate 10 .
  • the material of the conductive member 70 includes silver paste. Specifically, silver paste has good electrical conductivity and can reduce contact resistance. Specifically, the conductive member 70 is formed in the first undercut groove 201 through a spraying or fluid printing process.
  • the cathode 60 covers the portion of the common layer 50 of the light-emitting devices located opposite to the second film layer 40 and the portion of the common layer 50 of the light-emitting devices that does not fall within the first opening 301 .
  • the cathode 60 also covers the conductive member 70 .
  • the cathode 60 includes a first surface 601, and the first surface 601 is away from the common layer 50 of the light-emitting device.
  • the first surface 601 is uneven. Specifically, the vertical distance from the first surface 601 opposite to the first undercut groove 201 and around the first undercut groove 201 to the first film layer 30 is greater than the vertical distance from the first surface 601 away from the first undercut groove 201 to the first film layer 30 . The vertical distance of a film layer 30.
  • the display panel 100 also includes a plurality of driving transistors (not shown) located on the substrate 10.
  • the driving transistors include an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, and an active layer stacked on the substrate 10. Source and drain layers, flat layers, etc.
  • the first conductive layer 20 may be provided in the same layer as the gate electrode or signal line or the source and drain layer.
  • the pixel 1011 may include an anode, a cathode, a light-emitting device light-emitting functional layer and a light-emitting device common layer disposed between the anode and the cathode.
  • the light-emitting functional layer of the light-emitting device may include a red light-emitting material layer, a green light-emitting material layer and a blue light-emitting material layer.
  • the common layer 50 of the light-emitting device may include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer. Any of the above, but the structure of the pixel 1011 is not limited, and the materials and film layers included in the common layer 50 of the light-emitting device are not limited.
  • the arrangement and layer structure sequence of the pixels 1011 in the display panel can be any of the existing technologies, and are not limited here.
  • the light emitting device common layer 50 is disconnected at the first undercut groove 201 during fabrication, and at least part of the auxiliary electrode 210 is exposed from the first undercut groove 201,
  • the conductive member 70 can contact the auxiliary electrode 210 and the cathode 60 in a large area at the same time, thereby reducing the distance between the conductive member 70 and the auxiliary electrode 210 and the cathode 60. contact resistance between.
  • the cathode lapping structure 200 By arranging the cathode lapping structure 200 in the display area AA and adjacent to the pixel 1011, there is no need to provide a wider cathode lapping area in the non-display area BB, which is beneficial to reducing the width of the frame.
  • the conductive member 70 is filled directly, and the cathode 60 is electrically connected to the first conductive layer 20 through the conductive member 70 , which solves the problem of the cathode and the cathode in the prior art. There is a greater risk of poor signal wiring connections, which improves the yield rate.
  • the process steps of forming the first undercut groove 201 can be simplified.
  • the structure of the cathode overlapping structure 200 provided in this embodiment is basically the same as the structure of the cathode overlapping structure 200 provided in the first embodiment mentioned above. The difference is that the cathode 60 is also disconnected at the first undercut groove 201. , the conductive member 70 also covers the cathode 60 located in the first opening 301 . In this way, the electrical contact area between the conductive member 70 and the auxiliary electrode 210 and the cathode 60 is further increased, and the contact resistance between the conductive member 70 and the auxiliary electrode 210 and the cathode 60 can be further reduced.
  • the conductive member 70 also covers part of the first surface 601 .
  • the cathode overlap structure 200 provided in the second embodiment can not only reduce the contact resistance between the conductive member 70 and the auxiliary electrode 210 and the cathode 60 like the cathode overlap structure 200 in the first embodiment, but also achieve a narrow frame. .
  • the common layer 50 of the light-emitting device is disconnected at the first undercut groove 201 and the cathode 60 is formed above the conductive member 70.
  • the thickness and shape of the conductive member 70 are not easy to control. If the end of the conductive member 70 is close to the cathode 60 If the height or curvature of the protrusion is too large, the risk of breakage of the cathode 60 will increase.
  • the cathode overlap structure 200 provided in the second embodiment causes the cathode 60 and the common layer 50 of the light-emitting device to be broken together at the first undercut groove 201.
  • the risk of breakage of the cathode 60 caused by the thickness and shape of the conductive member 70 can be reduced.
  • the structure of the cathode overlap structure 200 provided in this embodiment is basically the same as that of the cathode overlap structure 200 provided in the first embodiment.
  • the difference is that the second film layer 40 is also formed on
  • a second undercut groove 202 is formed on the first film layer 30 away from the first undercut groove 201 and away from the first conductive layer 20, and is formed with the first film layer 30 at the first opening 301, and part of the auxiliary electrode 210 is formed from the second undercut groove 202.
  • the undercut groove 202 is exposed, the light emitting device common layer 50 is disconnected at the second undercut groove 202 , and the conductive member 70 is also filled in the second undercut groove 202 .
  • part of the light-emitting device common layer 50 completely falls on the auxiliary electrode 210 .
  • the first surface 601 is flush.
  • first undercut groove 201 and the second undercut groove 202 are arranged in parallel.
  • the first undercut groove 201 can also be integrally formed with the second undercut groove 202 .
  • the first undercut groove 201 and the second undercut groove 202 are arranged at least partially around the pixel 1011 .
  • the cathode overlap structure 200 provided in Embodiment 3 not only includes the first undercut groove 201 in Embodiment 1, but also includes a second undercut groove 202.
  • the auxiliary electrode 210 is formed from the first undercut groove 201 and the second undercut groove 202 at the same time.
  • the exposure of the undercut groove 202 not only increases the contact area between the conductive member 70 and the auxiliary electrode 210, but also further increases the space for accommodating the conductive member 70, thereby further increasing the area of the conductive member 70 itself, thereby further reducing the
  • the contact resistance between the conductive member 70 and the auxiliary electrode 210 and the cathode 60 can also achieve a narrow frame.
  • the structure of the cathode overlapping structure 200 provided in this embodiment is basically the same as the cathode overlapping structure 200 provided in the third embodiment. The difference is that the cathode 60 is disconnected at the second undercut groove 202. Part of the cathode 60 completely falls on the auxiliary electrode 210 .
  • the cathode overlap structure 200 provided in the fourth embodiment takes into account the technical effects of the third embodiment and the second embodiment, can reduce the contact resistance, achieve a narrow frame, and can reduce the thickness and thickness of the conductive member 70 of the cathode 60. Risk of breakage due to shape.
  • the structure of the cathode overlap structure 200 provided in this embodiment is basically the same as that of the cathode overlap structure 200 provided in the above-mentioned Embodiment 3 or Embodiment 4.
  • the difference lies in that: the first conductive layer 20 has A second opening 203 is formed, the auxiliary electrode 210 is located on at least one side of the second opening 203 , and part of the light-emitting device common layer 50 that completely falls within the first opening 301 is accommodated in the second opening 203 .
  • the part of the common layer 50 of the light-emitting device that completely falls within the first opening 301 of the cathode lap structure 200 provided in the fifth embodiment is accommodated in the second opening 203, which can further increase the space for accommodating the conductive member 70, so that it can further By increasing the area of the conductive member 70 itself, the contact resistance between the conductive member 70 and the auxiliary electrode 210 and the cathode 60 can be further reduced. At the same time, a narrow frame can also be achieved.
  • the structure of the cathode overlapping structure 200 provided in this embodiment is basically the same as the cathode overlapping structure 200 provided in the above-mentioned Embodiment 3 or Embodiment 4. The difference is that: the cathode overlapping structure 200 also has It includes a third film layer 80.
  • the third film layer 80 is disposed between the second film layer 40 and the light-emitting device common layer 50.
  • the third film layer 80 includes a fourth opening 801 corresponding to and overlapping the third opening 401.
  • the material of the film layer 80 is an inorganic material or an organic material.
  • the third film layer 80 is provided on the second film layer 40 and the material of the third film layer 80 is an inorganic material or an organic material.
  • the third film layer 80 can protect the second film layer 40 and prevent the second film layer 40 from being passed through. Etch more to form undercut grooves with the desired structure.
  • the third film layer 80 of the cathode overlap structure 200 provided in Embodiment 6 can further increase the space for accommodating the conductive member 70 in the longitudinal direction, and can further increase the area of the conductive member 70 itself, thereby further reducing the size of the conductive member 70 With the contact resistance between the auxiliary electrode 210 and the cathode 60, at the same time, a narrow frame can also be achieved.
  • the display panel sequentially includes a circuit setting area BB11 adjacent to the display area AA, an effective packaging area BB12, and a cutting area BB13 in the frame area.
  • the first conductive layer 20 may be a cathode power line
  • the cathode 60 may be a cathode
  • the cathode power line is provided through the cathode overlapping structure 200 Give an electrical signal to the cathode.
  • this application also provides a schematic diagram of a display terminal 2000.
  • the display terminal 2000 includes a terminal body 2001 and any one of the above display panels 100.
  • the terminal body 2001 and the display panel 100 are combined into one body.
  • the display terminal 2000 may be a mobile phone, a notebook computer, etc.
  • this application also provides a manufacturing method of the display panel 100, including the steps:
  • S103 Form a first film layer 30 on the first conductive layer 20, and form a first opening 301 on the first film layer 30. A portion of the first conductive layer 20 serving as the auxiliary electrode 210 is exposed from the first opening 301.
  • S104 Form a second film layer 40 on the first film layer 30, and the second film layer 40 has a third opening 401.
  • S105 Form at least the first undercut groove 201 and/or the second undercut groove 202 in the first film layer 30 and the second film layer 40 through differential etching.
  • S106 Form a light-emitting device common layer 50 on the second film layer 40, and the light-emitting device common layer 50 is disconnected at the first undercut groove 201 and/or the second undercut groove 202.
  • S107 Form a cathode 60 on the common layer 50 of the light-emitting device, and the cathode 60 is disconnected at the first undercut groove 201 and/or the second undercut groove 202.
  • S108 Fill the first undercut groove 201 and/or the second undercut groove 202 and the first opening 301 with conductive material to form the conductive member 70 and electrically connect the conductive member 70 to the auxiliary electrode 210 and the cathode 60 .
  • this application also provides a manufacturing method of the display panel 100, including the steps:
  • S113 Form a first film layer 30 on the first conductive layer 20, and form a first opening 301 on the first film layer 30. A portion of the first conductive layer 20 serving as the auxiliary electrode 210 is exposed from the first opening 301.
  • S114 Form a second film layer 40 on the first film layer 30, and the second film layer 40 has a third opening 401.
  • S115 Form at least the first undercut groove 201 and/or the second undercut groove 202 in the first film layer 30 and the second film layer 40 through differential etching.
  • S117 Fill the first undercut groove 201 and/or the second undercut groove 202 and the first opening 301 with conductive material to form the conductive member 70 and electrically connect the conductive member 70 to the auxiliary electrode 210 .
  • S118 Form a cathode 60 on the common layer 50 of the light-emitting device.
  • the cathode 60 covers the conductive member 70 and is in electrical contact with the conductive member 70.
  • the first conductive layer 20, the first film layer 30, and the second film layer 40 in steps 104, 105, 106, 114, 115, and 116 can also be stacked together first. , and then sequentially obtain the third opening 401, the first opening 301, the first undercut groove 201 and/or the second undercut groove 202 through etching.
  • the cathode lapping structure is arranged in the non-display area so that the cathode lapping structure is located on at least one side of the pixels of the display panel, that is, in the gap between the pixels. It is necessary to set up a cathode overlap structure in the non-display area, which is beneficial to reducing the width of the frame.
  • an undercut groove is formed in the first film layer and the second film layer, so that the auxiliary electrode is exposed from the undercut groove, the common layer of the light-emitting device is disconnected at the undercut groove, and then the conductive The parts are filled in the undercut grooves, and the conductive parts are electrically connected to the auxiliary electrode and the cathode respectively.
  • the undercut grooves allow a large electrical connection area between the conductive parts, the auxiliary electrode and the cathode, thereby reducing the distance between the conductive parts and the auxiliary electrode and the cathode. contact resistance between.

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Abstract

本申请公开了一种显示面板及显示终端，包括阴极搭接结构，阴极搭接结构包括：第一导电层，设置于基底上且包括辅助电极；第一膜层，设置于第一导电层上且包括第一开口；第二膜层，设置于第一膜层上且与第一膜层在第一开口处形成第一底切槽，辅助电极从第一底切槽裸露；导电件，填充于第一底切槽且与阴极及辅助电极电接触。

Description

显示面板及显示终端 技术领域
本申请涉及显示领域，具体涉及一种显示面板及显示终端。
 背景技术
在现有技术中，有机致发光二极管(Organic Light-Emitting Diode，OLED)包括多个发光器件，多个发光器件包括阳极(Anode)层、阴极(Cathode)层以及位于阳极和阴极之间的有机功能层，在实际制作过程中，采用光罩的方式制作阳极层，采用高精度金属掩模板(FMM Fine Metal Mask，FMM)蒸镀的方式在阳极层上制作发光器件发光功能层，采用整面蒸镀的方式形成发光器件公共层，采用整面制作的方式形成阴极层，发光器件发光功能层包括红色发光材料层、绿色发光材料层和蓝色发光材料层，发光器件公共层可以包括空穴注入层、空穴传输层、发光层、电子传输层及电子注入层等。
然而，由于发光器件公共层的阻挡，使得显示面板难以提供给阴极层电信号，现有技术中在非显示区通过发光公共层下方的阴极电源信号线提供给阴极信号的方式，需要设置较宽的搭接区域，使得显示面板的边框较宽。
 技术问题
本申请实施例提供一种具有低阻抗和窄边框效果的显示面板及显示终端。
 技术解决方案
本申请提供了一种显示面板，包括显示区，所述显示面板还包括基底、形成在所述基底上的多个像素及形成在所述基底上的至少一阴极搭接结构，所述像素及所述阴极搭接结构均位于所述显示区内，所述阴极搭接结构与所述像素相邻设置；其中，所述阴极搭接结构包括：
第一导电层，设置于所述基底上；所述第一导电层包括辅助电极；
第一膜层，设置于所述第一导电层上，所述第一膜层包括第一开口；
第二膜层，设置于所述第一膜层上，所述第二膜层与所述第一膜层在所述第一开口处形成第一底切槽，所述第一底切槽与所述第一开口连通，所述辅助电极从所述第一底切槽及所述第一开口内裸露出来；
发光器件公共层，形成在所述第二膜层上且在所述第一底切槽处断开；
阴极，至少设置于所述发光器件公共层上；及
导电件，填充于所述第一底切槽及所述第一开口内且与所述阴极及所述辅助电极电接触。
在本申请一可选实施例中，其中，所述阴极在所述第一底切槽处断开，所述导电件覆盖位于所述第一开口内的所述阴极上。
在本申请一可选实施例中，其中，所述导电件还覆盖位于所述第一开口外的所述阴极的远离所述第一膜层的部分表面上。
在本申请一可选实施例中，其中，所述导电件覆盖位于所述第一开口内的所述发光器件公共层上，所述阴极还覆盖所述导电件。
在本申请一可选实施例中，其中，所述第一导电层上形成有一第二开口，所述辅助电极位于所述第二开口的至少一侧，完全落在所述第一开口内的部分所述发光器件公共层收容在所述第二开口内。
在本申请一可选实施例中，其中，所述第二膜层还形成在远离所述第一底切槽且背离所述第一导电层的所述第一膜层上，且与所述第一膜层在所述第一开口处形成第二底切槽，部分所述辅助电极从所述第二底切槽内裸露出来，所述发光器件公共层在所述第二底切槽处断开，所述导电件还填充于所述第二底切槽内。
在本申请一可选实施例中，其中，所述第一底切槽与所述第二底切槽一体成型，所述第一底切槽与所述第二底切槽至少部分环绕所述像素设置。
在本申请一可选实施例中，其中，所述第一底切槽及所述第二底切槽平行设置。
在本申请一可选实施例中，其中，所述阴极搭接结构还包括第三膜层，所述第三膜层设置于所述第二膜层和所述发光器件公共层之间，所述第三膜层包括第三开口，所述第三开口与所述第一开口连通且重叠，所述第三膜层的材料为无机材料或有机材料。
在本申请一可选实施例中，其中，所述第一膜层和所述第二膜层均为金属材料，在同一刻蚀液中，所述第一膜层被刻蚀的速率大于所述第一导电层被刻蚀的速率和所述第二膜层被刻蚀的速率。
在本申请一可选实施例中，其中，所述第一膜层的材料为有机材料，所述第二膜层的材料为金属材料或无机材料。
相应地，本申请还提供了一种显示终端，其中，包括终端主体和显示面板，所述终端主体与所述显示面板组合为一体；所述显示面板包括显示区，所述显示面板还包括基底、形成在所述基底上的多个像素及形成在所述基底上的至少一阴极搭接结构，所述像素及所述阴极搭接结构均位于所述显示区内，所述阴极搭接结构与所述像素相邻设置；所述阴极搭接结构包括：
第一导电层，设置于所述基底上；所述第一导电层包括辅助电极；
第一膜层，设置于所述第一导电层上，所述第一膜层包括第一开口；
第二膜层，设置于所述第一膜层上，所述第二膜层与所述第一膜层在所述第一开口处形成第一底切槽，所述第一底切槽与所述第一开口连通，所述辅助电极从所述第一底切槽及所述第一开口内裸露出来；
发光器件公共层，形成在所述第二膜层上且在所述第一底切槽处断开；
阴极，至少设置于所述发光器件公共层上；及
导电件，填充于所述第一底切槽及所述第一开口内且与所述阴极及所述辅助电极电接触。
在本申请一可选实施例中，其中，所述阴极在所述第一底切槽处断开，所述导电件覆盖位于所述第一开口内的所述阴极上。
在本申请一可选实施例中，其中，所述导电件还覆盖位于所述第一开口外的所述阴极的远离所述第一膜层的部分表面上。
在本申请一可选实施例中，其中，所述导电件覆盖位于所述第一开口内的所述发光器件公共层上，所述阴极还覆盖所述导电件。
在本申请一可选实施例中，其中，所述第一导电层上形成有一第二开口，所述辅助电极位于所述第二开口的至少一侧，完全落在所述第一开口内的部分所述发光器件公共层收容在所述第二开口内。
在本申请一可选实施例中，其中，所述第二膜层还形成在远离所述第一底切槽且背离所述第一导电层的所述第一膜层上，且与所述第一膜层在所述第一开口处形成第二底切槽，部分所述辅助电极从所述第二底切槽内裸露出来，所述发光器件公共层在所述第二底切槽处断开，所述导电件还填充于所述第二底切槽内。
在本申请一可选实施例中，其中，所述第一底切槽与所述第二底切槽一体成型，所述第一底切槽与所述第二底切槽至少部分环绕所述像素设置。
在本申请一可选实施例中，其中，所述第一底切槽及所述第二底切槽平行设置。
在本申请一可选实施例中，其中，所述阴极搭接结构还包括第三膜层，所述第三膜层设置于所述第二膜层和所述发光器件公共层之间，所述第三膜层包括第三开口，所述第三开口与所述第一开口连通且重叠，所述第三膜层的材料为无机材料或有机材料。
 有益效果
本申请提供的显示面板及显示终端将阴极搭接结构设置在非显示区内并使得所述阴极搭接结构位于所述显示面板的像素的至少一侧，即位于像素之间的间隙内，不需要在非显示区设置阴极搭接结构，有利于减小边框的宽度。在阴极搭接结构中，在第一膜层和第二膜层形成底切槽，使得辅助电极从所述底切槽内裸露出来，发光器件公共层在第一底切槽处断开，再将导电件填充在第一底切槽内，导电件分别电连接第一导电层(辅助电极)及阴极(阴极)，第一底切槽使得导电件与辅助电极和阴极之间具有较大的电连接面积，从而可以降低导电件与辅助电极和阴极之间的接触阻抗。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例提供的一种显示面板的俯视示意图；
图2为本申请一实施例提供的一种显示面板的阴极搭接结构的底切槽所在位置的第一种俯视示意图；
图3为本申请另一实施例提供的一种显示面板的阴极搭接结构的底切槽所在位置的第二种俯视示意图；
图4为本申请再一实施例提供的一种显示面板的阴极搭接结构的底切槽所在位置的第二种俯视示意图；
图5为沿图2的剖面线I-I或沿图4的剖面线III-III的第一种阴极搭接结构的剖面示意图；
图6为沿图2的剖面线I-I或沿图4的剖面线III-III的第二种阴极搭接结构的剖面示意图；
图7为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第三种阴极搭接结构的剖面；
图8为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第四种阴极搭接结构的剖面示意图；
图9为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第五种阴极搭接结构的剖面示意图；
图10为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第六种阴极搭接结构的剖面示意图；
图11为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第七种阴极搭接结构的剖面示意图；
图12为沿图3的剖面线II-II或沿图4的剖面线IV-IV的第八种阴极搭接结构的剖面示意图；
图13为本申请一实施例提供的显示面板的非显示区的局部放大示意图；
图14为本申请一实施例提供显示终端的示意图；
图15为本申请提供的一种显示面板的制造方法；
图16为本申请提供的另一种显示面板的制造方法。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。此外，应当理解的是，此处所描述的具体实施方式仅用于说明和解释本申请，并不用于限制本申请。在本申请中，在未作相反说明的情况下，使用的方位词如“上”和“下”通常是指装置实际使用或工作状态下的上和下，具体为附图中的图面方向；而“内”和“外”则是针对装置的轮廓而言的。
本申请实施例提供了一种显示面板，包括显示区，所述显示面板还包括基底、形成在所述基底上的多个像素及形成在所述基底上的至少一阴极搭接结构，所述像素及所述阴极搭接结构均位于所述显示区内，所述阴极搭接结构与所述像素相邻设置；所述阴极搭接结构包括：第一导电层，设置于所述基底上；所述第一导电层包括辅助电极；第一膜层，设置于所述第一导电层上，所述第一膜层包括第一开口；第二膜层，设置于所述第一膜层上，所述第二膜层与所述第一膜层在所述第一开口处形成第一底切槽，所述第一底切槽与所述第一开口连通，所述辅助电极从所述第一底切槽及所述第一开口内裸露出来；发光器件公共层，形成在所述第二膜层上且在所述第一底切槽处断开；阴极，至少设置于所述发光器件公共层上；及导电件，填充于所述第一底切槽及所述第一开口内且与所述阴极及所述辅助电极电接触。本申请实施例还提供了包括前述显示面板的显示终端，以及前述显示面板的制造方法。以下分别进行详细说明。需说明的是，以下实施例的描述顺序不作为对实施例优选顺序的限定。
实施例一
请参阅图1、图2及图5，图1为显示面板100的俯视示意图，显示面板100包括显示区AA和非显示区BB，显示面板100还包括位于显示区AA内且阵列设置的多个像素1011，多个像素1011包括第一子像素101、第二子像素102和第三子像素103，第一子像素101、第二子像素102和第三子像素103可以分别为红色子像素、绿色子像素和蓝色子像素，但不限于此。显示面板100还包括位于显示区AA内的阴极搭接结构200，阴极搭接结构200与像素1011相邻设置。具体地，阴极搭接结构200位于相邻两个像素1011之间的间隙内或者位于像素1011与非显示区BB之间的间隙内。
图2为图1中的阴极搭接结构200的底切槽所在位置的第一种俯视示意图，图5为沿图2的剖面线I-I的第一种阴极搭接结构的剖面示意图。
具体地，请参阅图1、图2及图5，显示面板100还包括基底10，像素1011及阴极搭接结构200均设置在基底10上。阴极搭接结构200包括第一导电层20、第一膜层30、第二膜层40、发光器件公共层50、阴极60及导电件70；第一导电层20设置于基底10上，第一膜层30设置于第一导电层20上，第二膜层40设置于第一膜层30上，发光器件公共层50设置于所述第二膜层40上，发光器件公共层50至少设置于第二膜层40上，阴极60至少设置于发光器件公共层50上。其中，第一导电层20包括辅助电极210，第一膜层30包括第一开口301，辅助电极210从第一开口301内裸露出来。第二膜层40位于第一开口301的至少一侧，第二膜层40与第一膜层30在第一开口301处还形成有一第一底切槽201，第一底切槽201与第一开口301相连通。在本实施例中，第一底切槽201为第一开口301的一部分。发光器件公共层50在第一底切槽201处断开，部分发光器件公共层50落在辅助电极210上，部分辅助电极210从第一底切槽201内裸露出来，导电件70至少填充于第一底切槽201内且电连接阴极60及辅助电极210，阴极60通过导电件70电连接第一导电层20。
具体地，基底10可以为玻璃基底或柔性基底，在此不做限定。
在本实施例中，第一膜层30的材料为有机材料，第二膜层40的材料为金属材料或无机材料，有利于形成第一底切槽201。具体地，第一膜层30的可以为像素定义层或平坦层。具体地，第一膜层30的材料可以包括：聚丙烯酰胺（PAAm）、聚二甲基硅氧烷（PDMS）中任一种，第一膜层30的材料可以为光阻材料。第二膜层40可以为数据线层或阳极层，利用形成阳极或形成数据线时，同时形成第一底切槽201，可以简化第一底切槽201的形成工艺步骤。
在本实施例中，第一膜层30和第二膜层40均还可以为金属材料，在同一刻蚀液中，第一膜层30被刻蚀的速率大于第一导电层20被刻蚀的速率和第二膜层40被刻蚀的速率。更具体地，多层导电层中，第一导电层20的材料可以为钛（Ti），第一膜层30的材料可以为铝（Al）或钼（Mo），第二膜层的材料可以为钛（Ti），湿法蚀刻对铝或钼的刻蚀速率大于对钛的刻蚀速率，湿法刻蚀液可以包括例如磷酸、醋酸和硝酸的混合液。如此设置，可以在形成源漏极的同时一并形成辅助电极210和第一底切槽201，从而可以简化显示面板的制作流程。
在本实施例中，第二膜层40包括第三开口401，第三开口401与第一开口301重叠，也即第三开口401与第一开口301连通。
在本实施例中，导电件70还覆盖位于第一开口301内的发光器件公共层50。
在本实施例中，导电件70的背离第一膜层30的表面71为圆心位于基底10一侧的圆弧面。
在本实施例，导电件70的材料包括银浆。具体地，银浆具有良好的导电性，可以减小接触电阻。具体地，通过喷涂或流体打印工艺在第一底切槽201内形成导电件70。
在本实施例中，阴极60覆盖位于与第二膜层40位置相对的部分发光器件公共层50以及未落在第一开口301内的部分发光器件公共层50上，阴极60还覆盖导电件70。
其中，阴极60包括第一表面601，第一表面601背离发光器件公共层50。在本实施例中，由于第二膜层40的位置，使得第一表面601不平整。具体地，与第一底切槽201位置相对的以及第一底切槽201周边的第一表面601到第一膜层30的垂直距离大于背离第一底切槽201的第一表面601到第一膜层30的垂直距离。
具体地，显示面板100还包括多个位于基底10上的驱动晶体管(图未示)，驱动晶体管包括层叠设置在基底10上的有源层、栅极绝缘层、栅极、层间绝缘层、源漏极层、平坦层等。在本实施例中，第一导电层20可以与栅极或信号线或源漏极层同层设置。
具体地，像素1011可以包括阳极、阴极、设置于阳极和阴极之间的发光器件发光功能层和发光器件公共层。发光器件发光功能层可以包括红色发光材料层、绿色发光材料层和蓝色发光材料层，发光器件公共层50可以包括空穴注入层、空穴传输层、发光层、电子传输层及电子注入层等中任一种，但不限定像素1011的结构，不限定发光器件公共层50所包括的材料和膜层。
具体地，像素1011在显示面板中的排布、层结构顺序可以为现有技术中任一种，在此不限定。
具体地，由于第一底切槽201的存在，发光器件公共层50在制作时在第一底切槽201时断开，且使得至少部分辅助电极210从第一底切槽201内裸露出来，当导电件70填充在第一底切槽201及第一开口301内时，导电件70可以同时大面积的接触辅助电极210和阴极60，从而可以降低导电件70与辅助电极210和阴极60之间的接触阻抗。将阴极搭接结构200设置于显示区AA内且使阴极搭接结构200与像素1011相邻，不需要在非显示区BB内设置较宽的阴极搭接区域，有利于减小边框的宽度。
在本实施例中，不需要控制蒸镀方向或成膜方向等生产工艺过程，导电件70直接填充，阴极60通过导电件70电连接第一导电层20，解决了现有技术存在阴极与阴极信号走线连接不良风险较大的问题，提升了良率。
具体地，利用形成阳极或形成数据线时，同时形成第一底切槽201，可以简化第一底切槽201的形成工艺步骤。
实施例二
请参阅图6，本实施例提供的阴极搭接结构200与上述实施例一提供的阴极搭接结构200的结构基本相同，不同之处在于：阴极60也在第一底切槽201处断开，导电件70还覆盖位于第一开口301内的阴极60上。如此，进一步增大了导电件70与辅助电极210和阴极60之间的电接触面积，可以进一步降低导电件70与辅助电极210和阴极60之间的接触阻抗。
在本实施例中，导电件70还覆盖部分第一表面601。
具体地，一方面，实施例二提供的阴极搭接结构200不仅可以如同实施例1中的阴极搭接结构200一样降低导电件70与辅助电极210和阴极60之间的接触阻抗且实现窄边框。另一方面，只有发光器件公共层50在第一底切槽201处断开且阴极60形成在导电件70上方，导电件70的厚度和形状不易控制，如果导电件70的靠近阴极60的一端凸起的高度或弧度太大，将会增加阴极60的断裂风险，而实施例二种提供的阴极搭接结构200使阴极60和发光器件公共层50一并在第一底切槽201处断开，可以降低阴极60因导电件70的厚度和形状而导致的断裂风险。
实施例三
请参阅图3、4及图7，本实施例提供的阴极搭接结构200与上述实施例一提供的阴极搭接结构200的结构基本相同，不同之处在于：第二膜层40还形成在远离第一底切槽201且背离第一导电层20的第一膜层30上，且与第一膜层30在第一开口301处形成第二底切槽202，部分辅助电极210从第二底切槽202内裸露出来，发光器件公共层50在第二底切槽202处断开，导电件70还填充于第二底切槽202内。
在本实施例中，部分发光器件公共层50完全落在辅助电极210上。
在本实施例中，第一表面601平齐。
请参阅图3，在本实施例中，第一底切槽201及第二底切槽202平行设置。
请参阅图4，在本实施例中，第一底切槽201还可以与所述第二底切槽202一体成型，第一底切槽201与第二底切槽202至少部分环绕像素1011设置。
具体地，实施例三提供的阴极搭接结构200不仅包括实施例一中的第一底切槽201，还包括第二底切槽202，辅助电极210同时从第一底切槽201和第二底切槽202中露出来，不仅可以增加导电件70与辅助电极210的接触面积，还进一步增大了容纳导电件70的空间，从而可以进一步增大导电件70自身的面积，从而能够进一步降低导电件70与辅助电极210和阴极60之间的接触阻抗，与此同时，还可以实现窄边框。
实施例四
请参阅图8，本实施例提供的阴极搭接结构200与上述实施例三提供的阴极搭接结构200的结构基本相同，不同之处在于：阴极60在第二底切槽202处断开，部分阴极60完全落在辅助电极210上。
具体地，如上所述，实施例四提供的阴极搭接结构200兼顾了实施例三和实施例二的技术效果，可以降低接触阻抗、实现窄边框且能够降低阴极60因导电件70的厚度和形状而导致的断裂风险。
实施例五
请参阅图9-图10，本实施例提供的阴极搭接结构200与上述实施例三或实施例4提供的阴极搭接结构200的结构基本相同，不同之处在于：第一导电层20上形成有一第二开口203，辅助电极210位于第二开口203的至少一侧，完全落在第一开口301内的部分发光器件公共层50收容在第二开口203内。
具体地，实施例五提供的阴极搭接结构200的完全落在第一开口301内的部分发光器件公共层50收容在第二开口203内，可以进一步增加容纳导电件70的空间，从而可以进一步增大导电件70自身的面积，从而能够进一步降低导电件70与辅助电极210和阴极60之间的接触阻抗，与此同时，还可以实现窄边框。
实施例六
请参阅图11-图12，本实施例提供的阴极搭接结构200与上述实施例三或实施例4提供的阴极搭接结构200的结构基本相同，不同之处在于：阴极搭接结构200还包括第三膜层80，第三膜层80设置于第二膜层40和发光器件公共层50之间，第三膜层80包括与第三开口401对应且重叠的第四开口801，第三膜层80的材料为无机材料或有机材料。
具体地，当第二膜层40为导电材料或金属材料时，在第二膜层40上设置第三膜层80，第三膜层80的材料为无机材料或有机材料，当形成第一底切槽201及/或第二底切槽202时，由于第三膜层80的材料为无机材料或有机材料，第三膜层80可以保护第二膜层40，避免第二膜层40被过多刻蚀，以便形成结构符合预期的底切槽。
具体地，实施例六提供的阴极搭接结构200的第三膜层80可以在纵向上进一步增加容纳导电件70的空间，可以进一步增大导电件70自身的面积，从而能够进一步降低导电件70与辅助电极210和阴极60之间的接触阻抗，与此同时，还可以实现窄边框。
具体地，如图13所示，显示面板在边框区依次包括与显示区AA相邻的电路设置区BB11、有效封装区BB12、切割区BB13。
需要说明的是，在上述实施例中的任一项的显示面板或底切槽中，第一导电层20可以为阴极电源线，阴极60可以为阴极，阴极电源线通过阴极搭接结构200提供给阴极以电信号。
如图14所示，本申请还提供一种显示终端2000的示意图。显示终端2000包括终端主体2001和上述任一项的显示面板100，终端主体2001与显示面板100组合为一体。
具体地，显示终端2000可以为手机、笔记本电脑等。
请参阅图15并结合图6、8、10及11，本申请还提供一种显示面板100的在制造方法，包括步骤：
S101：提供一基底10。
S102：在基底10上形成第一导电层20。
S103：在第一导电层20上形成第一膜层30，并在第一膜层30上形成第一开口301，作为辅助电极210的部分第一导电层20从第一开口301内裸露出来。
S104：在第一膜层30上形成第二膜层40，第二膜层40具有第三开口401。
S105：通过差异化刻蚀在第一膜层30和第二膜层40中至少形成第一底切槽201及/或第二底切槽202。
S106：在第二膜层40上形成发光器件公共层50，发光器件公共层50在第一底切槽201及/或第二底切槽202处断开。
S107：在发光器件公共层50上形成阴极60，阴极60在第一底切槽201及/或第二底切槽202处断开。
S108：在第一底切槽201及/或第二底切槽202以及第一开口301内填充导体材料，以形成导电件70并使得导电件70电连接辅助电极210及阴极60。
请参阅图16并结合图5、7、9及12，本申请还提供一种显示面板100的在制造方法，包括步骤：
S111：提供一基底10。
S112：在基底10上形成第一导电层20。
S113：在第一导电层20上形成第一膜层30，并在第一膜层30上形成第一开口301，作为辅助电极210的部分第一导电层20从第一开口301内裸露出来。
S114：在第一膜层30上形成第二膜层40，第二膜层40具有第三开口401。
S115：通过差异化刻蚀在第一膜层30和第二膜层40中至少形成第一底切槽201及/或第二底切槽202。
S116：在第二膜层40上形成发光器件公共层50，发光器件公共层50在第一底切槽201及/或第二底切槽202处断开。
S117：在第一底切槽201及/或第二底切槽202以及第一开口301内填充导体材料，以形成导电件70并使得导电件70电连接辅助电极210。
S118：在发光器件公共层50上形成阴极60，阴极60覆盖导电件70且与导电件70电接触。
在上述两种显示面板100的制造方法中，步骤104、105、106、114、115、116中的第一导电层20、第一膜层30、第二膜层40还可以先叠设在一起，再通过刻蚀依次得到第三开口401、第一开口301及第一底切槽201及/或第二底切槽202。
本申请提供的显示面板及显示终端将阴极搭接结构设置在非显示区内并使得所述阴极搭接结构位于所述显示面板的像素的至少一侧，即位于像素之间的间隙内，不需要在非显示区设置阴极搭接结构，有利于减小边框的宽度。在阴极搭接结构中，在第一膜层和第二膜层形成底切槽，使得辅助电极从所述底切槽内裸露出来，发光器件公共层在底切槽处断开，再将导电件填充在底切槽内，导电件分别电连接辅助电极及阴极，底切槽使得导电件与辅助电极和阴极之间具有较大的电连接面积，从而可以降低导电件与辅助电极和阴极之间的接触阻抗。
以上对本申请实施例所提供的一种显示面板、显示终端及显示面板的制造方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，包括显示区，所述显示面板还包括基底、形成在所述基底上的多个像素及形成在所述基底上的至少一阴极搭接结构，所述像素及所述阴极搭接结构均位于所述显示区内，所述阴极搭接结构与所述像素相邻设置；其中，所述阴极搭接结构包括：
    第一导电层，设置于所述基底上；所述第一导电层包括辅助电极；
    第一膜层，设置于所述第一导电层上，所述第一膜层包括第一开口；
    第二膜层，设置于所述第一膜层上，所述第二膜层与所述第一膜层在所述第一开口处形成第一底切槽，所述第一底切槽与所述第一开口连通，所述辅助电极从所述第一底切槽及所述第一开口内裸露出来；
    发光器件公共层，形成在所述第二膜层上且在所述第一底切槽处断开；
    阴极，至少设置于所述发光器件公共层上；及
    导电件，填充于所述第一底切槽及所述第一开口内且与所述阴极及所述辅助电极电接触。
  2. 如权利要求1所述的显示面板，其中，所述阴极在所述第一底切槽处断开，所述导电件覆盖位于所述第一开口内的所述阴极上。
  3. 如权利要求1所述的显示面板，其中，所述导电件还覆盖位于所述第一开口外的所述阴极的远离所述第一膜层的部分表面上。
  4. 如权利要求1所述的显示面板，其中，所述导电件覆盖位于所述第一开口内的所述发光器件公共层上，所述阴极还覆盖所述导电件。
  5. 如权利要求1所述的显示面板，其中，所述第一导电层上形成有一第二开口，所述辅助电极位于所述第二开口的至少一侧，完全落在所述第一开口内的部分所述发光器件公共层收容在所述第二开口内。
  6. 如权利要求1所述的显示面板，其中，所述第二膜层还形成在远离所述第一底切槽且背离所述第一导电层的所述第一膜层上，且与所述第一膜层在所述第一开口处形成第二底切槽，部分所述辅助电极从所述第二底切槽内裸露出来，所述发光器件公共层在所述第二底切槽处断开，所述导电件还填充于所述第二底切槽内。
  7. 如权利要求6所述的显示面板，其中，所述第一底切槽与所述第二底切槽一体成型，所述第一底切槽与所述第二底切槽至少部分环绕所述像素设置。
  8. 如权利要求6所述的显示面板，其中，所述第一底切槽及所述第二底切槽平行设置。
  9. 如权利要求6所述的显示面板，其中，所述阴极搭接结构还包括第三膜层，所述第三膜层设置于所述第二膜层和所述发光器件公共层之间，所述第三膜层包括第三开口，所述第三开口与所述第一开口连通且重叠，所述第三膜层的材料为无机材料或有机材料。
  10. 如权利要求1所述的显示面板，其中，所述第一膜层和所述第二膜层均为金属材料，在同一刻蚀液中，所述第一膜层被刻蚀的速率大于所述第一导电层被刻蚀的速率和所述第二膜层被刻蚀的速率。
  11. 如权利要求1所述的显示面板，其中，所述第一膜层的材料为有机材料，所述第二膜层的材料为金属材料或无机材料。
  12. 一种显示终端，其中，包括终端主体和显示面板，所述终端主体与所述显示面板组合为一体；所述显示面板包括显示区，所述显示面板还包括基底、形成在所述基底上的多个像素及形成在所述基底上的至少一阴极搭接结构，所述像素及所述阴极搭接结构均位于所述显示区内，所述阴极搭接结构与所述像素相邻设置；所述阴极搭接结构包括：
    第一导电层，设置于所述基底上；所述第一导电层包括辅助电极；
    第一膜层，设置于所述第一导电层上，所述第一膜层包括第一开口；
    第二膜层，设置于所述第一膜层上，所述第二膜层与所述第一膜层在所述第一开口处形成第一底切槽，所述第一底切槽与所述第一开口连通，所述辅助电极从所述第一底切槽及所述第一开口内裸露出来；
    发光器件公共层，形成在所述第二膜层上且在所述第一底切槽处断开；
    阴极，至少设置于所述发光器件公共层上；及
    导电件，填充于所述第一底切槽及所述第一开口内且与所述阴极及所述辅助电极电接触。
  13. 如权利要求12所述的显示终端，其中，所述阴极在所述第一底切槽处断开，所述导电件覆盖位于所述第一开口内的所述阴极上。
  14. 如权利要求12所述的显示终端，其中，所述导电件还覆盖位于所述第一开口外的所述阴极的远离所述第一膜层的部分表面上。
  15. 如权利要求12所述的显示终端，其中，所述导电件覆盖位于所述第一开口内的所述发光器件公共层上，所述阴极还覆盖所述导电件。
  16. 如权利要求12所述的显示终端，其中，所述第一导电层上形成有一第二开口，所述辅助电极位于所述第二开口的至少一侧，完全落在所述第一开口内的部分所述发光器件公共层收容在所述第二开口内。
  17. 如权利要求12所述的显示终端，其中，所述第二膜层还形成在远离所述第一底切槽且背离所述第一导电层的所述第一膜层上，且与所述第一膜层在所述第一开口处形成第二底切槽，部分所述辅助电极从所述第二底切槽内裸露出来，所述发光器件公共层在所述第二底切槽处断开，所述导电件还填充于所述第二底切槽内。
  18. 如权利要求17所述的显示终端，其中，所述第一底切槽与所述第二底切槽一体成型，所述第一底切槽与所述第二底切槽至少部分环绕所述像素设置。
  19. 如权利要求17所述的显示终端，其中，所述第一底切槽及所述第二底切槽平行设置。
  20. 如权利要求17所述的显示终端，其中，所述阴极搭接结构还包括第三膜层，所述第三膜层设置于所述第二膜层和所述发光器件公共层之间，所述第三膜层包括第三开口，所述第三开口与所述第一开口连通且重叠，所述第三膜层的材料为无机材料或有机材料。
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