WO2024014152A1 - パターン基材の製造方法、硬化性組成物、及び部品の製造方法 - Google Patents

パターン基材の製造方法、硬化性組成物、及び部品の製造方法 Download PDF

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WO2024014152A1
WO2024014152A1 PCT/JP2023/020177 JP2023020177W WO2024014152A1 WO 2024014152 A1 WO2024014152 A1 WO 2024014152A1 JP 2023020177 W JP2023020177 W JP 2023020177W WO 2024014152 A1 WO2024014152 A1 WO 2024014152A1
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Prior art keywords
base material
removal
pattern mask
cured layer
composite
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PCT/JP2023/020177
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English (en)
French (fr)
Japanese (ja)
Inventor
武司 大幸
幸生 大門
泰吾 赤▲崎▼
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Toyo Gosei Co Ltd
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Toyo Gosei Co Ltd
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Priority to JP2024533553A priority Critical patent/JPWO2024014152A1/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Definitions

  • Some embodiments of the present invention relate to a method for manufacturing a patterned base material. Further, some other aspects of the present invention relate to a curable composition used in the method for producing the patterned base material. Further, some other aspects of the present invention relate to a method of manufacturing a component using the method of manufacturing the patterned base material.
  • Photolithography and imprinting are widely used as methods for forming fine patterns on base materials. Imprinting has been attracting attention in recent years because it has advantages such as being able to form patterns at a lower cost than photolithography (see Patent Document 1).
  • the hardened layer may remain in unintended locations on the base material.
  • a substrate is etched using the patterned mask as a resist after forming a patterned mask, such an unintended hardened layer may cause a problem that the desired patterned mask is not transferred to the substrate.
  • the present inventors have found that by treating the precursor pattern mask of the hardened layer through the removal steps (A) and (C) described below using a removal liquid, the unintended hardened layer can be removed. It was discovered that the patterned base material can be removed and a desired patterned base material can be obtained, and several embodiments of the present invention have been completed.
  • One aspect of the present invention is to first remove the precursor pattern mask in a cured layer composite comprising a base material and a precursor pattern mask made of a cured layer formed on the base material and having concave portions and convex portions.
  • a first removal step in which the cured layer is removed by at least a thickness of the cured layer in the recesses by treatment with a liquid to obtain a resist composite having a predetermined pattern mask in which the base material located in the recesses is exposed.
  • step (A) a surface treatment step (B) of performing surface treatment on the resist composite through the predetermined pattern mask to obtain a treated surface layer composite, and the predetermined pattern of the surface treatment composite.
  • a second removal step (C) in which the mask is removed with a second removal liquid to obtain a pattern base material, the removal conditions in the first removal step (A) and the removal conditions in the second removal step (C);
  • a method for manufacturing a patterned base material in which the following methods are different.
  • the surface treatment step (B) is an etching step in which the base material exposed through the predetermined pattern mask is etched to obtain an etched composite as the treated surface layer composite. (B1) may be used.
  • the surface treatment step (B) may include disposing a material different from the hardened layer constituting the predetermined pattern mask on the surface of the resist composite, and forming the treated surface layer composite through the predetermined pattern mask. It may be a dissimilar material arrangement step (B2) of obtaining a dissimilar material composite in which a material layer made of the different materials is provided on the base material.
  • the composition of the first removal liquid and the composition of the second removal liquid may be different, and the temperature of the first removal liquid may be lower than the temperature of the second removal liquid,
  • the time for removing the cured layer in the step (A) may be shorter than the time for removing the cured layer in the step (C).
  • the precursor pattern mask may be an imprint molded product.
  • steps (A) to (C) may be performed in a roll-to-roll process.
  • Another embodiment of the present invention is the pattern base material according to any of the above embodiments, which contains a monomer and a polymerization initiator, and the content of the monofunctional monomer is 95% by mass or more in the monomer component.
  • This is a curable composition used in the manufacturing method.
  • Another aspect of the present invention is a method for manufacturing a component, including the method for manufacturing a patterned base material according to any of the above aspects.
  • the method for manufacturing a patterned base material according to one embodiment of the present invention can remove unintended cured layers while maintaining a desired pattern mask.
  • FIG. 1 is a cross-sectional view showing a method for manufacturing a patterned base material according to an example of an embodiment.
  • FIG. 2 is a cross-sectional view showing a method for manufacturing a patterned base material according to another example of the embodiment.
  • (meth)acrylate means both “acrylate” and “methacrylate.”
  • (Meth)acryloyl similarly means both “acryloyl” and “methacryloyl”.
  • (Meth)acrylic similarly means both “acrylic” and “methacrylic”.
  • a "polymerizable group” represents a radically polymerizable group such as a (meth)acryloyl group, a vinyl group, an allyl group, a homoallyl group, a propargyl group, and a homopropargyl group. Note that groups such as epoxy groups and oxetanyl groups also act in the same manner as the polymerizable groups in this specification, and similar effects can be obtained.
  • One embodiment of the present invention is a method for manufacturing a patterned base material including the above steps.
  • a method for producing a patterned base material according to one embodiment of the present invention includes a cured layer having a base material and a precursor pattern mask consisting of a hardened layer formed on the base material.
  • the method may include a cured layer composite preparation step of preparing a layer composite.
  • the precursor pattern mask is a pattern having concave portions and convex portions, and can be produced by a known method such as photolithography, injection molding, and imprinting.
  • the cured layer composite may be manufactured and used by these known methods, or a commercially available product may be used.
  • the imprint method includes, for example, a step of applying a curable composition onto a base material to form a curable composition layer, a step of bringing the curable composition layer into contact with a mold having a pattern, and a step of forming a curable composition layer. curing the material layer with heat or light, thereby forming a precursor pattern mask having concave portions and convex portions.
  • the curable composition to be used will be described later.
  • the concave portions of the precursor pattern mask are regions where the thickness of the cured material layer is smaller than that of the convex portions.
  • FIG. 1(a) represents an example of a cured layer composite.
  • the cured layer composite 10A consists of a cured layer (precursor pattern mask) 1, a base material 2, and a support 3, and the cured layer 1 is formed on the base material 2 provided on the support 3. be.
  • the hardened layer 1 consists of a recessed part 1a with a thin film thickness and a convex part 1b with a thick film thickness, and the thickness (difference film thickness) obtained by subtracting the film thickness of the recessed part 1a from the thickness of the raised part 1b is described later. It is preferable to set the pattern mask film thickness to a predetermined value. Note that the recess 1a may be a residual film when forming the opening, or the center of the recess 1a may be thinner, or an opening may be formed in the center.
  • the shape and size of the precursor pattern mask made of the above-mentioned cured layer are appropriately selected depending on the use of the patterned base material obtained by the method for manufacturing a patterned base material according to one embodiment of the present invention.
  • the shape of the precursor pattern mask include a hole pattern, a pillar pattern, a cone pattern, a lattice pattern, a honeycomb pattern, and a line and space.
  • the bottom surfaces of the hole pattern, pillar pattern, and cone pattern may be a circle, an ellipse, or the like, or a polygon such as a triangle or a quadrangle.
  • the width of the lines and/or spaces may be 20 nm to 100 ⁇ m, preferably 50 nm to 50 ⁇ m, more preferably 100 nm to 10 ⁇ m, and the film thickness may be 20 nm. ⁇ 100 ⁇ m, preferably 50 nm to 50 ⁇ m, more preferably 100 nm to 10 ⁇ m.
  • the side constituting the bottom surface of the pattern mask (the diameter in the case of a circle, the major axis in the case of an ellipse) is 20 nm to 100 ⁇ m, preferably 50 nm to 50 ⁇ m, more preferably 100 nm to 1 ⁇ m.
  • the film thickness may be 20 nm to 100 ⁇ m, preferably 50 nm to 50 ⁇ m, more preferably 100 nm to 1 ⁇ m.
  • the pitch of the precursor pattern mask may be 20 nm to 100 ⁇ m, preferably 50 nm to 50 ⁇ m, and more preferably 100 nm to 1 ⁇ m.
  • the above-mentioned precursor pattern mask film thickness represents the film thickness of the convex portion 1b.
  • the aspect ratio of the precursor pattern mask is preferably 0.5 to 100. Note that the aspect ratio represents the ratio of the differential film thickness to the smaller width 1 of the width of the concave portion 1a and the width of the convex portion 1b.
  • the material of the mold can be appropriately selected from known materials, such as metals such as nickel, chromium, titanium, iron, copper, aluminum, and stainless steel; non-metals such as glass, quartz, and silicon; and polyethylene terephthalate, polyimide, and polycarbonate. , polycycloolefin, polyethylene, polypropylene, polyvinylidene, polyurethane, polyester, polymethyl methacrylate, polyether sulfone, polydimethylsiloxane, polytetrafluoroethylene, and other organic polymers.
  • the mold may be a replica mold made by curing a thermosetting resin or a photocuring resin.
  • the material of the base material can be appropriately selected from known materials, such as metals such as nickel, chromium, titanium, iron, copper, aluminum, and stainless steel; nonmetals such as glass, quartz, and silicon; and polyethylene terephthalate, polyimide, Examples include organic polymers such as polycarbonate, polycycloolefin, polyethylene, polypropylene, polyvinylidene, polyurethane, polyethersulfone, and polytetrafluoroethylene.
  • the base material may be a base material produced by curing a thermosetting resin or a photocurable resin. Note that the "base material" refers to a material that contacts the cured layer on the surface of the cured layer that faces the precursor pattern mask. In addition to the cured layer and the base material, the cured layer composite may further include a material such as a support.
  • the thickness of the base material is appropriately selected depending on the use of the patterned base material to be formed.
  • the thickness of the base material is preferably 50 nm to 10 mm, more preferably 500 nm to 1 mm. Note that when the steps (A) to (C) described below are performed by a roll-to-roll process, the total thickness of the base material and support is 1 ⁇ m to 300 ⁇ m from the viewpoint of ease of winding up the cured layer composite. is preferable, and 10 ⁇ m to 100 ⁇ m is more preferable.
  • the combination of the base material and the support is appropriately selected depending on the use of the patterned base material to be formed.
  • Examples of the combination of a base material and a support include a support having an organic polymer layer (base material) on its surface, a support having a metal vapor deposited layer (base material) on its surface, and the like.
  • a pattern manufacturing method includes removing the concave cured layer (also referred to as residual film) of the precursor pattern mask 1 in the cured layer composite 10A with a first removal liquid, and removing the cured layer located in the concave portion 1a.
  • the method includes a first removal step (A) to obtain a resist composite 20A having a predetermined pattern mask 1A in which the base material 2 is exposed.
  • step (A) the cured layer is removed so that only the base material 2 facing the concave portions 1a of the precursor pattern mask 1 is exposed, and the base material 2 located in the convex portions 1b of the precursor pattern mask 1 is not exposed. That is, the hardened layer corresponding to at least the thickness of the recess 1a is removed, and as a result, the recess 1a becomes the opening 1d, and the convex part 1b becomes the convex part 1c with a reduced film thickness. Thus, only the base material 2 facing the opening 1d is exposed. Preferably, substantially all of the hardened layer in the recess 1a is removed.
  • the amount of the cured layer to be removed is preferably an amount corresponding to the thickness of the recess 1a, but as long as the desired pattern base material is obtained, the amount of the cured layer to be removed may be greater than the thickness of the recess 1a. good. That is, since the hardened layer is basically removed isotropically in both the thickness direction and the surface direction perpendicular to the thickness direction, the hardened layer is removed until the dimension in the surface direction of the recess 1a reaches a predetermined dimension. Just remove it. In addition, in step (A), the hardened layer may be removed anisotropically.
  • a composition layer that becomes concave parts when cured has a smaller thickness than a composition layer that becomes convex parts when cured, so the light absorption of the photopolymerization initiator described later is small, and therefore the degree of curing of the cured layer in the concave parts is low.
  • the concave hardened layer tends to be removed more easily than the convex hardened layer.
  • the recessed hardened layer may not come into sufficient contact with the first removal liquid. In this case, the concave hardened layer tends to be more difficult to remove than the convex hardened layer.
  • the removal rate of the recessed hardened layer and the convex hardened layer may be different, and the hardened layer in step (A) may be removed anisotropically. Removal of the recessed cured layer, that is, the residual film, may be performed by dissolving the residual film in the first removal liquid, or by peeling the residual film from the surface of the base material.
  • the thickness of the patterned mask after removing the remaining film is preferably 10 nm to 100 ⁇ m, more preferably 100 nm to 50 ⁇ m.
  • the pattern mask film thickness is preferably 10 nm to 50 ⁇ m, more preferably 100 nm to 10 ⁇ m.
  • the pattern mask film thickness is preferably 100 nm to 100 ⁇ m, more preferably 500 nm to 10 ⁇ m.
  • the first removal liquid may be a solvent that has a high affinity with the cured layer (hereinafter also referred to as a "good solvent”), or a solvent that has a low affinity with the cured layer (hereinafter also referred to as a "poor solvent”).
  • a mixed solvent of a good solvent and a good solvent may be used.
  • a good solvent as the first removal liquid, the remaining film can be effectively removed. Note that if a good solvent alone would remove even the desired pattern mask, it is preferable to use a mixed solvent of a poor solvent and a good solvent.
  • the first removal liquid and the second removal liquid described later may further contain additives such as a solubility regulator, a surfactant, an antifoaming agent, and a stabilizer.
  • the content of the additive is preferably 10 parts by mass or less, more preferably 5 parts by mass or less, based on 100 parts by mass of the removal liquid.
  • the lower limit of the content of the additive can be, for example, 0.01 part by mass.
  • the first removal liquid may be used as a first removal liquid that does not substantially contain additives, which is preferable.
  • affinity between the removal liquid and the cured layer means the degree of interaction between the removal liquid and the cured layer. When a solvent with high affinity comes into contact with the cured layer, the cured layer is dissolved or swelled and removed.
  • Good solvents include ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether acetate, dimethoxyethane, diglyme and triglyme.
  • Glycol ether solvents such as; cyclic ether solvents such as tetrahydrofuran (THF), tetrahydropyran and dioxane; aromatic ether solvents such as anisole and ethoxybenzene; methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, ⁇ -methoxyisobutyric acid Ester solvents such as methyl, ethyl butyrate, propyl butyrate, cyclohexyl acetate, ethyl acetate, butyl acetate, amyl acetate, isoamyl acetate, ethyl lactate and ⁇ -butyrolactone; cyclohexanone, methyl isobutyl ketone (MIBK), ethyl methyl ketone (MEK), Ketone solvents such as 2-heptanone and acetone; carbonate solvents such as dimethyl carbonate, diethyl carbonate
  • the good solvent is preferably a solvent containing a glycol ether solvent, a cyclic ether solvent, an aromatic ether solvent, or a ketone solvent, and more preferably a solvent containing a glycol ether solvent.
  • poor solvents examples include alcohol solvents such as methanol, ethanol, 1-propanol, 2-propanol (IPA), n-butanol, s-butanol, t-butanol, pentanol, and diacetone alcohol; dibutyl ether, t-butanol, and diacetone alcohol; Dialkyl ether solvents such as butyl methyl ether, dipropyl ether and diisopropyl ether; aliphatic hydrocarbon solvents such as n-hexane, n-heptane, n-octane and cyclohexane; water; and the like. These poor solvents may be used alone or in combination of two or more. From the viewpoint of safety and cost, alcohol solvents and water are preferred among the poor solvents.
  • alcohol solvents and water are preferred among the poor solvents.
  • the mixing ratio can be appropriately selected depending on the affinity between each solvent and the cured layer.
  • the mixing ratio mass ratio
  • the ratio of good solvent to poor solvent is preferably 5:95 to 90:10, more preferably 10:90 to 80:20, even more preferably 20:80 to 70:30.
  • the first removal liquid so as to increase the ratio of good solvent in the preliminary test step (P).
  • the first removal liquid so as to increase the proportion of the poor solvent in the preliminary test step (P).
  • the poor solvent and the good solvent are uniformly mixed at room temperature (for example, 25° C.) at the above-mentioned mixing ratio.
  • the amount of the cured layer removed per unit time of the first removal liquid is below a certain level.
  • the above removal amount can be measured by preparing a cured layer by the method described in the cured layer composite preparation step and immersing the cured layer in a candidate removal liquid (preliminary test step (P)). . That is, the processing conditions of step (A) and step (C) can be determined by the preliminary test step (P).
  • a precured layer composite having a preliminary base material and a precured layer formed on the preliminary base material is prepared under predetermined conditions.
  • a cured layer composite comprising a preliminary test step (P) for determining first removal conditions and second removal conditions, a base material, and a precursor pattern mask consisting of a cured layer formed on the base material.
  • the cured layer composite in step (A) and the processing conditions in steps (A) and (C) are determined by the preliminary test step (P).
  • the determined pre-cured layer composite and processing conditions are the same.
  • the said processing conditions include the composition of each removal liquid, temperature, stirring conditions, processing time, etc.
  • the composition of the first removal liquid and the composition of the second removal liquid are different. Specifically, it is preferable that the content ratio of the poor solvent in the first removal liquid is higher than the content ratio of the poor solvent in the second removal liquid.
  • the temperature of the first removal liquid is lower than the temperature of the second removal liquid.
  • the amount removed in step (A) can be made smaller than the amount removed in step (C), and the remaining film can be removed in step (A). It is possible to achieve both removal and maintenance of a desired pattern mask.
  • the temperature of the first removal liquid is not particularly limited as long as it is below the boiling point of the first removal liquid, but may be, for example, below 50°C, below room temperature (e.g. 25°C), below 15°C, or below 5°C. I can do it.
  • the lower limit of the temperature of the first removal liquid is not particularly limited as long as the first removal liquid is a liquid, and may be, for example, 0° C. or higher.
  • the time for removing the cured layer in step (A) is shorter than the time for removing the cured layer in step (C).
  • the amount removed in step (A) can be made smaller than the amount removed in step (C).
  • the removal time of the cured layer in step (A) can be, for example, 30 minutes or less, 20 minutes or less, 15 minutes or less, or 5 minutes or less.
  • the lower limit of the time for removing the cured layer in step (A) is not particularly limited as long as the remaining film is removed, but it can be set to, for example, 10 seconds or more.
  • the removal amount can be defined, for example, based on the thickness of the cured layer removed per unit time. Specifically, the thickness (nm) of the cured layer before and after the removal process is measured, the difference in thickness is determined, and the difference is divided by the removal time (minutes) to determine the removal rate (nm/nm). minute) can be calculated.
  • the removal amount (nm) expressed by the difference is preferably an amount equivalent to the thickness of the recess 1a as described above, but as long as the desired pattern base material is obtained, the removal amount (nm) may vary depending on the thickness of the recess 1a. It is also possible to remove more than the corresponding amount until the dimension in the surface direction of the recess 1a reaches a predetermined dimension.
  • the removal rate of the recessed hardened layer and the convex hardened layer may differ depending on various factors, and the hardened layer in step (A) may be removed anisotropically.
  • the removal conditions in the first removal step (A) (hereinafter also referred to as “first removal conditions”) and the removal conditions in the second removal step (C) ( (Hereinafter, also referred to as “second removal condition.”) are different.
  • the conditions that differ between step (A) and step (C) may be any one of the composition of the removal liquid, the temperature of the removal liquid, the removal time, and other conditions, or may be a combination of these conditions.
  • Other conditions include, for example, the convection velocity of the removal liquid in the removal step and the vibration time by ultrasonic waves.
  • the convection speed of the removal liquid can be appropriately adjusted by known methods for controlling fluid, such as the stirring speed of the removal liquid in the removal tank and the amount of circulation by a circulation pump.
  • the method of performing the treatment with the first removal liquid can be selected as appropriate depending on the thickness of the cured layer, etc.
  • treatment methods include immersing the cured layer composite in a removal solution (immersion method), spraying the cured layer composite with the removal solution (spray method), and showering the cured layer composite with the removal solution ( Examples include a shower method), a method of piling up a removal liquid on the cured layer composite (paddle method), and the like.
  • a method for manufacturing a patterned base material according to one embodiment of the present invention includes a surface treatment step (B) in which the resist composite is subjected to surface treatment through the predetermined pattern mask to obtain a treated surface layer composite.
  • treated surface composites include etched composites and dissimilar material composites. Details will be described later.
  • the surface treatment step (B) performs an etching treatment on the base material exposed through the predetermined pattern mask in the resist composite to obtain an etched composite as the treated surface layer composite.
  • the etching step (B1) is preferable.
  • the etching step (B1) may be dry etching or wet etching, but with anisotropic dry etching, the sides of the pattern mask may be unintentionally etched in the roll-to-roll process, and surface treatment by dry etching.
  • the etching step (B1) is preferably wet etching because the cured layer may have a reduced affinity for the second removal liquid described later. FIG.
  • FIG. 1C shows an example of an etched composite in which the surface treatment step (B) is a wet etching step (B1).
  • the base material 2 of the etched composite 30A is processed through the pattern mask 1A, and becomes a processed base material 2A in which the base material in the region facing the opening 1d is removed.
  • etching solutions include oxidizing solutions containing oxidizing agents such as hydrogen peroxide, perchloric acid, ammonium peroxodisulfate, and sodium peroxodisulfate; hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, phosphoric oxalic acid, Acidic solutions containing acids such as formic acid and acetic acid; metal salt solutions containing metal salts such as iron (III) chloride, copper (II) chloride and chromium (IV) oxide, aluminum chloride, sodium cyanide, cerium ammonium nitrate, etc.
  • oxidizing solutions containing oxidizing agents such as hydrogen peroxide, perchloric acid, ammonium peroxodisulfate, and sodium peroxodisulfate
  • hydrochloric acid sulfuric acid, nitric acid, hydrofluoric acid, phosphoric oxalic acid
  • Acidic solutions containing acids such as formic acid and acetic acid
  • alkaline solutions containing alkalis such as tetramethylammonium hydroxide, hydroxylamine, hydrazine, ethylenediamine, sodium hydroxide, and potassium hydroxide; and the like.
  • the etching solution may further contain additives such as surfactants, stabilizers, and antifoaming agents.
  • the temperature of the etching solution is not particularly limited as long as it is below the boiling point of the etching solution, and can be, for example, below 80°C, below 60°C, or below 50°C.
  • the lower limit of the temperature of the etching solution is not particularly limited as long as the etching solution is a liquid, but may be, for example, 0° C. or higher or room temperature or higher.
  • the etching time can be appropriately set depending on the thickness of the base material, and can be, for example, 30 seconds to 30 minutes, 1 minute to 20 minutes, or 3 minutes to 10 minutes.
  • a material different from the hardened layer constituting the predetermined pattern mask is disposed on the surface of the resist composite, and the treated surface layer composite is treated as the Preferably, it is a dissimilar material arrangement step (B2) in which a dissimilar material composite is obtained in which a material layer made of the different material is provided on the base material through a predetermined pattern mask.
  • methods for disposing different materials in the dissimilar material disposing step (B2) include sputtering method, sol-gel method, direct coating method, electrolytic plating method, and electroless plating method, depending on the type of dissimilar materials to be arranged. Any known method can be selected as appropriate. These methods can be carried out using known materials and procedures, except for using the resist composite as the layer to be processed.
  • the disposed different material is removed after the different material placement step (B2) and before the second removal step (C).
  • an exposing step may be performed in which at least a portion of the convex portion of the cured layer is removed to expose at least a portion of the convex portion of the cured layer.
  • a method for exposing the convex portions of the hardened layer can be appropriately selected from known removal methods, and examples thereof include removal of dissimilar materials using a squeegee, etching, CMP (chemical mechanical polishing), and the like.
  • FIG. 2C shows an example of a composite of different materials when the surface treatment step (B) is a step of arranging different materials (B2).
  • FIGS. 2(a) and 2(b) are the same as FIGS. 1(a) and 1(b) except that the support body 1 is not provided, duplicate explanation will be omitted. It goes without saying that the support 1 may be provided in the process shown in FIG.
  • a material layer 4 made of a different material is formed on the base material 2 where the pattern mask 1A is present.
  • a step of partially removing the material layer 4 is not necessarily necessary, but only the material layer 4 on the convex portion 1c is removed. You may carry out a process.
  • the dissimilar material placement step (B2) is a sputtering step
  • conditions such as sputtering target, inert gas, current value, and processing time may be determined by known methods depending on the material and thickness of the base material and the use of the patterned base material. Appropriately selected.
  • the different materials disposed in the sputtering process are appropriately selected depending on the use of the patterned base material, and include known simple metals, alloys, metal oxides, and the like.
  • the dissimilar material placement step (B2) may be PVD (physical vapor deposition) other than sputtering, such as vacuum evaporation and ion plating, or may be CVD (chemical vapor deposition).
  • the dissimilar material arrangement step (B2) is a step using a sol-gel method
  • a precursor chemical solution containing a metal compound is applied to the surface of the resist composite, and the coating film is heated, thereby forming the resist composite. It is preferable to obtain a composite of different materials in which metal is arranged on the surface of the material.
  • additives such as acids, bases, and nucleophiles may be used in combination to promote the gelation reaction.
  • a precursor solution containing tetraethoxysilane by applying a precursor solution containing tetraethoxysilane and heating the coating film, a heterogeneous material composite in which silicon oxide is arranged on the surface of the resist composite can be obtained.
  • the dissimilar materials arranged in the sol-gel method are appropriately selected depending on the use of the patterned base material, and include, for example, oxides such as magnesia, alumina, silica, titania, and zirconia, and composite materials containing these oxides. .
  • the dissimilar material placement step (B2) is a step using a direct coating method, for example, by applying a dispersion containing fine particles of metal or its oxide to the surface of the resist composite, It is preferable to obtain a composite of different materials on whose surface the metal is disposed.
  • the coating film may be heated in order to volatilize the dispersion medium.
  • a dispersion containing silver nanoparticles and heating the coating film a heterogeneous material composite in which silver is arranged on the surface of the resist composite can be obtained.
  • the dissimilar materials arranged in the direct coating method using fine particles are appropriately selected depending on the use of the patterned base material, and include, for example, known simple metals, alloys, metal oxides, and the like.
  • a curable composition is applied to the surface of the resist composite, and the coating film is cured by light or heat.
  • the hardened layer of different material is not particularly limited as long as it is a material that cannot be removed by the second removal liquid described later.
  • a water-soluble resin solution having a polyvinyl alcohol skeleton as the main chain and an azide group as a photosensitive group and irradiating it with ultraviolet rays a hardened layer of different materials is placed on the surface of the resist composite. A composite of different materials is obtained.
  • the dissimilar material arrangement step (B2) is an electrolytic plating step
  • the resist composite is immersed in a plating solution
  • the anode made of metal is immersed in the plating solution
  • a current is applied between the base material and the anode. It is preferable to obtain a dissimilar material composite in which the metal is disposed on the surface of the resist composite by passing the resist composite.
  • a conductive material is used as the base material.
  • a metal salt containing ions of the metal may be added to the plating solution.
  • the resist composite is immersed in a plating solution containing a metal salt containing metal ions, so that the metal is coated on the surface of the resist composite. It is preferable to obtain a composite of different materials in which the In the above procedure, additives such as a pH adjuster, a reducing agent, and a catalyst may be added to the plating solution to promote plating.
  • additives such as a pH adjuster, a reducing agent, and a catalyst may be added to the plating solution to promote plating.
  • the thickness of the dissimilar material placed in the dissimilar material disposing step (B2) may be within a range that does not hinder the removal of the cured layer in the second removal step (C) described later, and it depends on the intended use of the pattern base material to be formed and It can be selected as appropriate depending on the type of step (B2).
  • the thickness of the different material is preferably 1.0 or less, more preferably less than 1.0, and 0.5 or less or 0.1 or less with respect to the depth 1.0 of the recess of the pattern mask. be able to. Further, the depth of the recess can be set to, for example, 0.005 or more.
  • Second removal step (C) A method for manufacturing a patterned base material according to one embodiment of the present invention includes a second removal step (C) in which the cured layer of the treated surface layer composite is removed using a second removal liquid to obtain a patterned base material.
  • a second removal step (C) By treating the treated surface layer composite in the second removal step (C), substantially all of the hardened layer on the base material can be removed.
  • the cured layer may be removed by dissolving the cured layer in the second removal liquid or by peeling the cured layer from the surface of the base material. Examples of the patterned base material formed by the second removal step (C) are shown in FIG. 1(d) and FIG. 2(d).
  • the pattern base material 40B of FIG. 2(d) includes a patterned material layer 4A formed on the base material 2 by the dissimilar material arrangement step (B2).
  • the first removal conditions are different from the second removal conditions.
  • the method for creating a difference between the first removal condition and the second removal condition is preferably any one of the composition of the removal liquid, the temperature and removal time of the removal liquid, and other conditions. It may be a combination of conditions.
  • the second removal liquid preferably contains a solvent that has high affinity with the cured layer.
  • a solvent that has high affinity with the cured layer. Examples of such a solvent include the above-mentioned good solvents.
  • the composition of the first removal liquid and the composition of the second removal liquid may be the same or different. If the first removal liquid and the second removal liquid have the same composition, for example, the temperature of the second removal liquid may be made higher than the temperature of the first removal liquid, or the processing time with the second removal liquid may be longer than that of the first removal liquid. A method that takes longer than the processing time is desirable. By these methods, it is preferable that the amount removed in step (A) is smaller than the amount removed in step (C).
  • the second removal liquid may be caused to undergo convection using a known convection method such as a stirring device and a circulation pump, or an ultrasonic vibration tank may be used. Further, when convection is used also in the first step (A), the convection speed of the second removal liquid may be higher than the convection speed of the first removal liquid. These treatments can increase the removal rate of the hardened layer and shorten the treatment time in step (C). Note that the stirring speed when stirring can be, for example, 50 rpm to 500 rpm.
  • the above steps (A) to (C) are preferably performed by a roll-to-roll process.
  • a roll-to-roll process By performing the above steps in a roll-to-roll process, large-area cured layer composites, resist composites, and treated surface layer composites can be continuously processed, which is advantageous in terms of throughput and manufacturing cost.
  • the rolls, winding devices, unwinding devices, and the like used in the roll-to-roll process may be those normally used in the roll-to-roll process, as appropriate.
  • Curable composition One embodiment of the present invention contains a monomer and a polymerization initiator, the monomer includes a monofunctional monomer, and the content of the monofunctional monomer is 95% in the monomer component. % by mass or more, is a curable composition used in the above method for producing a patterned base material.
  • the curable composition contains a monofunctional monomer.
  • a monofunctional monomer is a compound having one polymerizable group in one molecule.
  • linear aliphatic monofunctional (meth)acrylates such as methyl (meth)acrylate, n-butyl (meth)acrylate, and lauryl (meth)acrylate; isobutyl (meth)acrylate, isoamyl (meth)acrylate and branched aliphatic monofunctional (meth)acrylates such as isononyl (meth)acrylate; cyclohexyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclo Cycloaliphatic monofunctional (meth)acrylates such as pentanyloxyethyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, and a
  • aromatic monofunctional (meth)acrylates aromatic monofunctional vinyl compounds such as styrene and vinylnaphthalene; heterocyclic aliphatic monofunctional vinyl compounds such as N-vinylpyrrolidone; and (meth)acrylic acid.
  • monofunctional monomers these monomers may be used alone or in combination.
  • the alicyclic ring possessed by the cycloaliphatic monofunctional (meth)acrylate may be a single alicyclic ring such as cyclopentane and cyclohexane, a fused alicyclic ring such as decalin, tricyclodecane, adamantane, and norbornane, or pyrrolidine, pyrrolidone, etc. and a heteroalicyclic ring such as tetrahydrofuran.
  • the aromatic ring possessed by the aromatic monofunctional (meth)acrylate and the aromatic monofunctional vinyl compound may be a monoaromatic ring such as benzene, a fused aromatic ring such as naphthalene, anthracene, fluorene, etc., furan, pyridine, etc. and a heteroaromatic ring such as thiophene.
  • At least one methylene group possessed by the monofunctional monomer may be substituted with a divalent substituent such as a carbonyl group or an oxygen atom.
  • a divalent substituent such as a carbonyl group or an oxygen atom.
  • monofunctional monomers in which methylene groups are substituted with oxygen atoms include monofunctional monomers having alkylene oxide chains such as ethylene oxide chains, butylene oxide chains, and perfluoroethylene oxide chains.
  • At least one hydrogen atom of the monofunctional monomer is substituted with a substituent such as a hydroxyl group, a carboxy group, a cyano group, a nitro group, a halogen atom, a halogenated alkyl group, a trialkylsilyl group, and a triarylsilyl group.
  • a substituent such as a hydroxyl group, a carboxy group, a cyano group, a nitro group, a halogen atom, a halogenated alkyl group, a trialkylsilyl group, and a triarylsilyl group.
  • Halogens include fluorine, chlorine, bromine and iodine.
  • the curable composition preferably contains a cycloaliphatic monofunctional (meth)acrylate as a monofunctional monomer.
  • the carbon number of the monofunctional monomer is preferably 3 to 50, more preferably 4 to 30, and even more preferably 6 to 20.
  • the double bond equivalent of the monofunctional monomer is preferably 50 to 500, more preferably 60 to 400, even more preferably 80 to 300.
  • the number of carbon atoms mentioned above includes the number of carbon atoms of the polymerizable group and the divalent substituent.
  • the content of the monofunctional monomer is 95% by mass or more in the monomer components of the curable composition.
  • the content of the monofunctional monomer is preferably 98% by mass or more, more preferably 99% by mass or more from the viewpoint of affinity with the second removal liquid.
  • substantially all of the above monomer components may be monofunctional monomers.
  • the curable composition contains a polymerization initiator.
  • the polymerization initiator is not particularly limited as long as it cures the curable composition with heat or energy rays, and can be appropriately selected from known materials. Polymerization initiators may be used alone or in combination.
  • a photoradical polymerization initiator is preferable.
  • energy rays used for curing include electromagnetic waves such as infrared rays, visible rays, ultraviolet rays, excimer lasers, extreme ultraviolet rays, X-rays and gamma rays, and particle beams such as electron beams and alpha rays. It can be appropriately selected depending on the polymerization initiator.
  • the curable composition may further contain optional components other than the monofunctional monomer and polymerization initiator as the monomers.
  • optional components include polyfunctional monomers as the above-mentioned monomers, polymers, solvents, additives, and the like.
  • the curable composition may contain a polyfunctional monomer.
  • a polyfunctional monomer is a compound having two or more polymerizable groups in one molecule. Examples of polyfunctional monomers include ethylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentylglycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, and 1,4-cyclohexanediol.
  • Aliphatic polyfunctional (meth)acrylates such as di(meth)acrylate and tricyclodecane dimethanol di(meth)acrylate; EO-modified bisphenol A di(meth)acrylate and 9,9-bis[(meth)acryloyloxyethoxyphenyl ]
  • Aromatic polyfunctional (meth)acrylates such as fluorene; and aromatic polyfunctional vinyl compounds such as divinylbenzene and divinylnaphthalene; and the like.
  • the number of polymerizable groups that the polyfunctional monomer has is preferably 2 to 6, more preferably 2 to 4, and even more preferably 2 to 3.
  • the degree of crosslinking of the cured layer can be adjusted, and the amount removed in step (A) and step (C) can be adjusted.
  • the polyfunctional monomer polyfunctional monomers having different numbers of polymerizable groups may be used in combination.
  • the number of carbon atoms in the polyfunctional monomer is preferably 8 to 100, more preferably 10 to 50, even more preferably 15 to 30. Note that the number of carbon atoms mentioned above includes the number of carbon atoms of the polymerizable group.
  • the double bond equivalent of the polyfunctional monomer is preferably from 50 to 1,000, more preferably from 60 to 800, even more preferably from 80 to 500.
  • the content of the polyfunctional monomer in the monomer components is preferably 5% by mass or less, more preferably 2% by mass or less, and even more preferably 1% by mass or less.
  • the curable composition may contain a polymer.
  • the polymer those commonly used in curable compositions can be used as appropriate.
  • the time required to obtain a cured layer from the curable composition tends to be shortened.
  • the molecular weight of the polymer the affinity of the cured layer with the removal liquid can be adjusted.
  • the glass transition temperature of the polymer is preferably at least room temperature, and more preferably at least the treatment temperature of steps (A) to (C).
  • the content of the polymer can be 10 to 300 parts by weight based on 100 parts by weight of the total amount of monomer components, polymerization initiators, and additives. Furthermore, even if the above-mentioned curable composition contains a polymerization initiator and additives in addition to the monomer components, the content of the polymer should be 10 to 300 parts by mass per 100 parts by mass of the monomer components. I can do it.
  • the curable composition may contain a solvent.
  • the solvent those commonly used for curable compositions can be used as appropriate, and examples include the same solvents as the above-mentioned good solvents in step (A).
  • the solvent can be used in an amount of 1 to 10,000 parts by weight based on 100 parts by weight of the total amount of monomer components, polymerization initiator, polymer, and additives.
  • the term "solvent" refers to a liquid compound having no polymerizable group, excluding the monofunctional monomer, the polymerization initiator, the polyfunctional monomer, and the polymer. A reactive diluent having a polymerizable group and the like are not included in the solvent, and are considered as the above-mentioned monofunctional monomer or the above-mentioned polyfunctional monomer.
  • the curable composition may contain additives.
  • additives those commonly used in curable compositions can be used as appropriate.
  • additives include mold release agents, adhesion promoters, antioxidants, polymerization inhibitors, colorants, plasticizers, surfactants, silane coupling agents, fillers, pigments, dyes, acidic compounds, sensitizers, etc. can be mentioned.
  • the content is preferably within a range that does not significantly affect the composition's affinity with the removal liquid, curability, and mold filling properties.
  • the content of the additive is preferably 0.001 to 10 parts by weight, more preferably 0.01 to 5 parts by weight, and particularly preferably 0.05 to 3 parts by weight, based on 100 parts by weight of the total amount of monomer components.
  • additives include functional groups that function as additives (perfluoroalkyl groups, alkoxysilyl groups, oxyalkylene groups, phenolic hydroxyl groups, amino groups, etc.), as well as (meth)acryloyl groups, vinyl groups, and allyl groups. It may be a compound having a polymerizable group such as. In this specification, such compounds having both a functional group and a polymerizable group are not considered as additives, but as the above-mentioned polyfunctional monomers or the above-mentioned monofunctional monomers.
  • the glass transition temperature of the cured layer obtained from the curable composition is preferably at least room temperature, more preferably at least the treatment temperature of steps (A) to (C).
  • One embodiment of the present invention is a method for manufacturing parts using the method for manufacturing the patterned base material described above.
  • the above method for manufacturing a patterned base material can be used in a method for manufacturing parts.
  • the cured layer can be removed by steps (A) and (C) using a removal liquid. Therefore, in manufacturing parts, this method has advantages in terms of throughput, manufacturing equipment, and manufacturing cost compared to known methods in which residual film removal and hardened layer removal are performed by dry etching or the like.
  • the above-mentioned parts are not particularly limited as long as they use patterned base materials, and examples include fine wiring, wire grid polarizing plates, patterned media, channels, LEDs, microlens arrays, light guide plates, and various electrode substrates.
  • energy devices such as solar cells and fuel cells, biodevices such as biosensors and cell culture vessels, microreactors, and the like.
  • electrodes of batteries such as electrolytic capacitors, electric double layer capacitors, ceramic capacitors, lithium ion secondary batteries, nickel-metal hydride batteries, and lead-acid batteries using aluminum, titanium, tantalum, conductive polymers, etc. are also preferable.
  • Electrodes can be obtained as a patterned electrode base material by using an electrode base material made of aluminum, titanium, tantalum, a conductive polymer, etc. as the base material in the manufacturing method of the present invention.
  • These electrodes manufactured by the manufacturing method of the present invention have the effect of increasing the surface area and improving the capacitance by having a pattern on the surface.
  • the present invention can be implemented depending on its usage.
  • the surface layer treatment step is an etching step or a sputtering step
  • the surface layer treatment in the method for producing a patterned base material of the present invention is appropriately selected from known surface layer treatments depending on the application.
  • the numbers assigned to members in the embodiments correspond to the reference numbers in the drawings. Note that the drawings schematically show the materials processed in each step, and the lengths, thicknesses, ratios, etc. of each member in the drawings are not limited to those shown in the drawings.
  • Example 1 to 17 and Comparative Examples 1 to 11 in which the surface layer treatment step is an etching step in the method for manufacturing a patterned base material according to one embodiment of the present invention are shown below.
  • Example 1 ⁇ Production of film mold> 96 parts by mass of perfluoropolyether urethane dimethacrylate (Fluorolink MD-700, manufactured by Solvay Specialty Polymers Japan Co., Ltd.) and 4 parts by mass of 1-hydroxycyclohexyl phenyl ketone (Omnirad 184, manufactured by IGM Resins B.V.) Mix at room temperature to prepare a film mold composition. The above film mold composition is dropped onto a PET film (Cosmoshine A4100, manufactured by Toyobo Co., Ltd., thickness 100 ⁇ m), and a film mold composition layer having a thickness of about 15 ⁇ m is formed using a bar coater.
  • a PET film Cosmoshine A4100, manufactured by Toyobo Co., Ltd., thickness 100 ⁇ m
  • a silicon mold (DTM-7-2, manufactured by Kyodo International Co., Ltd., recess depth 1 ⁇ m) with a hole pattern was pretreated with a fluorine mold release agent (Optool HD-1100TH, manufactured by Daikin Industries, Ltd.).
  • the above film mold composition layer is pressed onto the recess (diameter of 500 nm).
  • the film mold composition layer is exposed to light for 200 seconds using a UV-LED lamp (wavelength: 365 nm, illuminance: 100 mW/cm 2 ) in a nitrogen atmosphere to cure it. After curing, it is released from the silicone mold to obtain a film mold.
  • curable composition sample 96 parts by mass of FA-513AS (dicyclopentanyl acrylate, manufactured by Showa Denko Materials Co., Ltd.) and 4 parts by mass of 2,4,6-trimethylbenzonyl-diphenylphosphine oxide (OmniradTPO, manufactured by IGM Resins B.V.)
  • a curable composition sample is prepared by mixing the following parts at room temperature.
  • 3-methacryloxypropyltrimethoxysilane (KBM-503, manufactured by Shin-Etsu Chemical Co., Ltd.) was coated on the entire surface of an aluminum-deposited silicon wafer (aluminum-deposited layer thickness: approximately 350 nm, size: 2 cm square, manufactured by Advantech Co., Ltd.) Drop to spread it.
  • the aluminum vapor deposition layer corresponds to the base material 2
  • the silicon wafer corresponds to the support body 3.
  • This wafer is heated at 120° C. for 15 minutes, cooled to room temperature, and washed with acetone to obtain a pretreated base material.
  • the above composition sample is dropped onto this base material and spin coated using a spin coater (1H-DX2, manufactured by Mikasa Co., Ltd.) to form a composition layer with a thickness of about 3.5 ⁇ m.
  • the pressure is reduced to 10 kPa, and the film mold cut into a size of 1.5 cm square is pressed onto the composition layer obtained above.
  • the composition layer is exposed to light for 10 seconds using a UV-LED lamp (wavelength: 365 nm, illuminance: 100 mW/cm 2 ) and cured. Note that the thickness of the remaining film 1A made of the above composition layer remaining in the recessed portion of the precursor pattern mask is 10 nm to 100 nm.
  • the cured layer is released from the film mold to obtain a cured layer composite 10.
  • the resulting cured layer composite has a hole pattern (denoted as "Hole” in the table) derived from the film mold.
  • ⁇ First removal step> The cured layer composite 10 obtained above is immersed in the first removal liquid (60 mL) at room temperature, taken out from the removal liquid, and dried to obtain the resist composite 20.
  • Table 1 shows the type of first removal liquid and the immersion time.
  • the cured layer composite 10 is placed in the removal liquid being stirred by a magnetic stirrer (KF-82, manufactured by Yazawa Kagaku Co., Ltd.) at a rotation speed of 50 rpm to 500 rpm so as not to come into contact with the stirrer. do.
  • a magnetic stirrer KF-82, manufactured by Yazawa Kagaku Co., Ltd.
  • samples in which the pattern mask was excessively dissolved and disappeared by the solvent, or samples in which a residual film was confirmed after the first removal process were evaluated in the surface treatment process (etching process) and 2. The removal process was not evaluated. Such samples are indicated as "-" in the table.
  • etching process A wet etching solution is prepared by mixing hydrochloric acid, nitric acid, and water in a volume ratio of 3:1:2. 20 mL of the wet etching solution is transferred to a glass beaker, and the resist composite is immersed at room temperature for 5 minutes to wet-etch the aluminum deposited layer located in the recesses of the pattern mask. After completion of the treatment, washing with water and drying are performed to obtain a treated surface layer composite 30 (etched composite 30A).
  • etching process Evaluation of surface treatment process (etching process)>
  • the etched composite 30A obtained in the above surface treatment step (etching step) is cut in the thickness direction, and the cross section is observed and evaluated using an electron microscope (JSM-IT200, manufactured by JEOL Ltd.).
  • JSM-IT200 electron microscope
  • ⁇ Second removal process> The same operation as the first removal step is performed, except that the etched composite 30A obtained above is used instead of the hardened layer composite 10, and the processing conditions are changed to those shown in the table.
  • Table 1 shows the type, temperature, and immersion time of the second removal liquid.
  • "rt" represents room temperature.
  • Examples 2 to 17 Other than changing the monomer in the curable composition sample, the shape of the precursor pattern mask, the composition of the removal liquid (in the case of a mixed solvent, the mixing ratio is the mass ratio), the temperature of the removal liquid, and the removal time as shown in Table 1. Patterned base material formation and evaluation are performed in the same steps as in Example 1.
  • the monomer "IB-XA" in Table 1 represents isobornyl acrylate (manufactured by Kyoeisha Chemical Co., Ltd.).
  • Example 1 except that the method of the first removal step, the monomer of the curable composition sample, the shape of the precursor pattern mask, the composition of the removal liquid, the temperature of the removal liquid, and the removal time were changed as shown in Table 1. Pattern base material formation and evaluation are performed in the same process.
  • the cured layer composite 10 is treated by dry etching instead of the immersion. Specifically, using a plasma dry cleaner (PDC210, manufactured by Yamato Scientific Co., Ltd.), dry etching is performed for 90 seconds under the conditions of an oxygen flow rate of 10 mL/min and an RF output of 350 W, and the pattern is located in the concave portion of the precursor pattern mask.
  • a plasma dry cleaner PDC210, manufactured by Yamato Scientific Co., Ltd.
  • the remaining film 1A is removed to obtain a resist composite 20 in which the aluminum-deposited silicon wafer located in the recess is exposed.
  • An example in which dry etching is used as described above in the first removal process is shown as “dry” in the "first removal process” in the table.
  • Example 18 to 34 and Comparative Examples 12 to 22 in which the surface layer treatment step is a sputtering step in the method for manufacturing a patterned base material according to one embodiment of the present invention are shown below.
  • the cured layer composite 10 used is the same as in the example of the etching process described above.
  • the evaluation of the first removal process, the second removal process, and the first removal process is performed in the same manner as in the example of the etching process described above.
  • Table 2 shows the conditions and evaluation results of Examples and Comparative Examples.
  • ⁇ Surface treatment process sputtering process>
  • the resist composite 20 was sputtered using an auto fine coater (JEC-3000FC, manufactured by JEOL Ltd.) at a sputtering current of 20 mA for 60 seconds, and platinum as a sputtering target was applied to the resist composite in a thickness of about 3 nm. Deposit in thickness.
  • the above sputtering is repeated 15 times in total to obtain a treated surface layer composite 30 (different material composite 30B) in which platinum is laminated on the surface to a thickness of about 45 nm.
  • the remaining film can be removed while maintaining the desired pattern mask.
  • the residual film was not removed or the formed pattern mask was removed, making it impossible to obtain the desired patterned base material.
  • dry etching is used to remove the remaining film, it takes a long time to remove the formed pattern mask, and it is found that this is not suitable for industrial use from the viewpoint of throughput. It is presumed that this is because the hardened layer changes in quality due to dry etching, and its affinity for the second removal liquid decreases significantly.
  • the method for manufacturing a patterned base material according to one embodiment of the present invention has the effect of removing unintended hardened layers while maintaining the desired pattern mask by treating the hardened layer composite with a specific method. Therefore, it is useful for manufacturing parts.

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007200422A (ja) * 2006-01-25 2007-08-09 Toshiba Corp パタンド磁気記録媒体の製造方法
JP2008221491A (ja) * 2007-03-09 2008-09-25 Dainippon Printing Co Ltd ナノインプリント用モールドおよびその製造方法
JP2011000766A (ja) * 2009-06-17 2011-01-06 Tokyo Ohka Kogyo Co Ltd ナノインプリント用組成物およびパターン形成方法
JP2012150443A (ja) * 2010-12-27 2012-08-09 Hoya Corp レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
WO2013018569A1 (ja) * 2011-08-04 2013-02-07 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
WO2013136858A1 (ja) * 2012-03-13 2013-09-19 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法およびパターン
JP2020111769A (ja) * 2019-01-09 2020-07-27 ウシオ電機株式会社 金属膜作成方法及びナノインプリンティング材

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007200422A (ja) * 2006-01-25 2007-08-09 Toshiba Corp パタンド磁気記録媒体の製造方法
JP2008221491A (ja) * 2007-03-09 2008-09-25 Dainippon Printing Co Ltd ナノインプリント用モールドおよびその製造方法
JP2011000766A (ja) * 2009-06-17 2011-01-06 Tokyo Ohka Kogyo Co Ltd ナノインプリント用組成物およびパターン形成方法
JP2012150443A (ja) * 2010-12-27 2012-08-09 Hoya Corp レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
WO2013018569A1 (ja) * 2011-08-04 2013-02-07 Hoya株式会社 レジスト現像剤、レジストパターンの形成方法及びモールドの製造方法
WO2013136858A1 (ja) * 2012-03-13 2013-09-19 富士フイルム株式会社 光インプリント用硬化性組成物、パターン形成方法およびパターン
JP2020111769A (ja) * 2019-01-09 2020-07-27 ウシオ電機株式会社 金属膜作成方法及びナノインプリンティング材

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