WO2023199824A1 - 表面処理組成物、およびウェハの製造方法 - Google Patents

表面処理組成物、およびウェハの製造方法 Download PDF

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WO2023199824A1
WO2023199824A1 PCT/JP2023/014102 JP2023014102W WO2023199824A1 WO 2023199824 A1 WO2023199824 A1 WO 2023199824A1 JP 2023014102 W JP2023014102 W JP 2023014102W WO 2023199824 A1 WO2023199824 A1 WO 2023199824A1
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Prior art keywords
surface treatment
treatment composition
wafer
mass
group
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PCT/JP2023/014102
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English (en)
French (fr)
Japanese (ja)
Inventor
雄三 奥村
貴陽 照井
彩香 吉田
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Central Glass Co Ltd
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Central Glass Co Ltd
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Priority to JP2024514922A priority Critical patent/JPWO2023199824A1/ja
Priority to KR1020247030369A priority patent/KR20240151193A/ko
Priority to EP23788243.6A priority patent/EP4510171A1/en
Priority to CN202380031774.8A priority patent/CN118974894A/zh
Priority to US18/845,594 priority patent/US20250210375A1/en
Publication of WO2023199824A1 publication Critical patent/WO2023199824A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/20—Diluents or solvents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/50—Cleaning of wafers, substrates or parts of devices characterised by the part to be cleaned
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices

Definitions

  • the present invention relates to a surface treatment composition and a method for manufacturing a wafer.
  • Patent Document 1 describes a surface treatment composition containing a silylating agent, diethyl carbonate, and propylene carbonate as a solvent (Example 5 of Patent Document 1).
  • the present inventor found that by using a silicon compound such as trialkylsilylamine as a silylating agent and a hydrocarbon solvent with a content of 97% by mass or more as a solvent, the surface treatment can be carried out. They found that the composition tends to increase the water contact angle, and through subsequent studies, they further discovered that a practically high contact angle can be maintained if the content of the hydrocarbon solvent in the solvent is 75% by mass or more. The invention was completed.
  • the following surface treatment composition and wafer manufacturing method are provided.
  • the silylating agent contains a silicon compound represented by formula (1), (R 1 ) 3 Si-X (1) (However, R 1 is a group consisting of a hydrocarbon group having 1 to 10 carbon atoms, and a hydrocarbon group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms are substituted with fluorine atoms.) (X is an amino group)
  • the solvent contains 75% by mass or more of a hydrocarbon solvent out of 100% by mass of the total amount of the solvent, Surface treatment composition.
  • the surface treatment composition according to any one of The silicon compound is trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tert-butylamine, and hexamethyldisilazane, and at least one trimethylsilyl group of these trimethylsilylamines is an ethyldimethylsilyl group, a propyldimethylsilyl group, A surface treatment composition containing one or more compounds selected from the group consisting of a butyldimethylsilyl group, a hexyldimethylsilyl group, an octyldimethylsilyl group, and a decyldimethylsilyl group. 7.
  • the surface treatment composition according to any one of A surface treatment composition having a water contact angle of more than 80° on the surface of a silicon wafer after surface treatment as measured by the following procedure.
  • a smooth silicon wafer with a thermal oxide film layer on the surface was immersed in a 1% by mass hydrofluoric acid aqueous solution at 25°C for 10 minutes, in pure water for 1 minute at 25°C, and in 2-propanol (iPA) for 1 minute at 25°C. Soak and wash.
  • the silicon wafer after cleaning is placed horizontally with iPA filled therein, and the vapor of the surface treatment composition is supplied to the silicon wafer.
  • the vapor is changed into a liquid on the surface of the silicon wafer, and iPA held on the surface is replaced with the liquid.
  • the silicon wafer is immersed in iPA at 25° C. for 1 minute. After that, air is blown onto the silicon wafer to remove the iPA on the surface.
  • the above water contact angle is measured on the silicon wafer surface obtained through the above steps using 2 ⁇ l of pure water in accordance with JIS R 3257:1999 "Wettability test method for substrate glass surface". . 8. 1. ⁇ 7.
  • the surface treatment composition according to any one of The surface treatment composition does not contain an acyclic carbonate or contains an acyclic carbonate in an amount of 2% by mass or less based on 100% by mass of the surface treatment composition.
  • the surface treatment composition according to any one of The total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn and Ag measured using inductively coupled plasma mass spectrometry is 100% in the surface treatment composition.
  • a surface treatment composition having a mass ppb or less. 12. preparing a wafer having a concavo-convex pattern on its surface; supplying a cleaning liquid to the surface of the wafer to clean it; Supplying vapor of a surface treatment composition to the surface holding the cleaning liquid, changing the state of the vapor to a liquid on the surface, replacing the cleaning liquid with the liquid, and providing water-repellent protection to at least a portion of the surface.
  • a method for manufacturing a wafer comprising: forming a film; the surface treatment composition includes a silylating agent and a solvent;
  • the silylating agent contains a silicon compound represented by formula (1), (R 1 ) 3 Si-X (1) (However, R 1 is a group consisting of a hydrocarbon group having 1 to 10 carbon atoms, and a hydrocarbon group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms are substituted with fluorine atoms.) (X is an amino group)
  • the solvent contains 75% by mass or more of a hydrocarbon solvent out of 100% by mass of the total amount of the solvent, Wafer manufacturing method. 13. 12.
  • 14. 12. or 13 A method for manufacturing a wafer according to A method for manufacturing a wafer, wherein in the surface treatment composition, the hydrocarbon solvent contains an aromatic hydrocarbon.
  • 15. 12. ⁇ 14 A method for manufacturing a wafer according to any one of A method for producing a wafer, wherein the content of the silylating agent in the surface treatment composition is 0.3% by mass or more and 30% by mass or less based on 100% by mass of the surface treatment composition. 16. 12. ⁇ 15.
  • a method for manufacturing a wafer according to any one of In the surface treatment composition a boiling point difference between the boiling point of the solvent and the boiling point of the silylating agent (boiling point of the solvent - boiling point of the silylating agent) at 1 atm is 20° C. or more. 17. 12. ⁇ 16.
  • the silicon compound includes trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tertiarybutylamine, and hexamethyldisilazane, and at least one trimethylsilyl group of these trimethylsilylamines is ethyldimethylsilyl.
  • Wafer manufacturing method 18. 12. ⁇ 17. A method for manufacturing a wafer according to any one of A method for producing a wafer, wherein the surface treatment composition does not contain an acyclic carbonate or contains an acyclic carbonate in an amount of 2% by mass or less based on 100% by mass of the surface treatment composition. 19. 12. ⁇ 18.
  • a method for manufacturing a wafer according to any one of In the surface treatment composition the number of particles larger than 0.2 ⁇ m, as measured using a light scattering particle-in-liquid detector, is 1.0 ⁇ 10 4 or less per mL of the surface treatment composition. Wafer manufacturing method. 21. 12. ⁇ 20.
  • a method for manufacturing a wafer according to any one of In the surface treatment composition the total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn and Ag measured using inductively coupled plasma mass spectrometry is A method for manufacturing a wafer, wherein the amount of the surface treatment composition is 100 mass ppb or less. 22. 12. ⁇ 21.
  • a method for manufacturing a wafer according to any one of A method for manufacturing a wafer comprising the step of mixing materials for each component of the surface treatment composition, wherein the total amount of moisture in the materials is 2000 mass ppm or less based on the total amount of the materials.
  • a surface treatment composition that easily increases the water contact angle and a method for manufacturing a wafer using the same are provided.
  • FIG. 2 is a schematic perspective view of a wafer whose surface has a fine uneven pattern.
  • 2 is a schematic cross-sectional view showing a part of the aa' cross section in FIG. 1.
  • FIG. FIG. 2 is a schematic cross-sectional view showing a state in which vapor of the composition is supplied to a recess holding a liquid.
  • FIG. 2 is a schematic cross-sectional view of a wafer on which a water-repellent protective film is formed.
  • the surface treatment composition of this embodiment is supplied as a vapor to the surface of a wafer having an uneven pattern on the surface, and is used to form a water-repellent protective film on the surface.
  • This surface treatment composition contains a silylating agent and a solvent, the silylating agent contains a silicon compound represented by the following formula (1), and the solvent accounts for 75% by mass or more of 100% by mass of the total amount of the solvent. Constructed to include a hydrocarbon solvent.
  • R 1 is a group consisting of a hydrocarbon group having 1 to 10 carbon atoms, and a hydrocarbon group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms are substituted with fluorine atoms.
  • X is an amino group
  • a fine uneven pattern is formed on the surface of the substrate (wafer) through film formation, lithography, etching, etc., and then water or organic solvents are used to clean the wafer surface.
  • a wet process such as a cleaning process is performed, and a drying process is also performed to remove liquid such as a cleaning liquid or a rinsing liquid that has adhered to the wafer due to the wet process.
  • a drying process it is known that in wafers having fine uneven patterns, the uneven patterns are likely to be deformed or collapsed.
  • the surface treatment composition can be improved by containing the predetermined silicon compound as a silylating agent and using a hydrocarbon solvent having a content of 97% by mass or more as a solvent. It was found that it is easy to increase the water contact angle. Furthermore, it has been found that a practically high contact angle can be maintained by using a hydrocarbon solvent in which the content in the solvent is increased to 75% by mass or more. From the viewpoint of improving the throughput of the manufacturing process, it is preferable to use a method that more easily increases the water contact angle even in a shorter time.
  • the surface treatment composition can easily increase the water contact angle because it can improve the water contact angle and also suppress the reaction in gas (steam).
  • the solvent with a high boiling point (low volatility) preferentially aggregates on the wafer surface and is replaced with the cleaning solution, it is possible to suppress the silylation agent from reacting with the cleaning solution and being consumed. It is thought that this makes it possible to easily increase the angle.
  • the surface treatment composition contains one or more silicon compounds represented by the following formula (1) as a silylating agent (hereinafter, the silicon compound represented by the formula (1) may also be simply referred to as a silicon compound). be).
  • the silylating agent may contain only the silicon compound of the following formula (1), but may also contain a silylating agent other than the silicon compound of the following formula (1) as long as the effects of the present invention are not impaired.
  • R 1 is a group consisting of a hydrocarbon group having 1 to 10 carbon atoms, and a hydrocarbon group having 1 to 10 carbon atoms in which some or all of the hydrogen atoms are substituted with fluorine atoms.
  • X is an amino group
  • nitrogen-containing ring examples include a piperidine ring, an imidazole ring (for example, N-trimethylsilylimidazole, etc.), a triazole ring (for example, N-trimethylsilyltriazole, etc.), a tetrazole ring, an oxazolidinone ring, a morpholine ring, and other nitrogen rings. Containing heterocycles and the like can be mentioned.
  • the amino group is preferably a dialkylamino group, more preferably a dialkylamino group whose alkyl group has 1 to 4 carbon atoms, and a dimethylamino group ( --N(CH 3 ) 2 ) is more preferred.
  • R 1 preferably each independently contains a hydrocarbon group having 1 to 10 carbon atoms, and preferably contains a hydrocarbon group having 1 to 6 carbon atoms. More preferably, it contains a hydrocarbon group having 1 to 4 carbon atoms.
  • at least one R 1 preferably contains a hydrocarbon group having 3 to 4 carbon atoms, and more preferably contains a propyl group or a butyl group.
  • the silicon compound is a silane compound having at least a structure in which three groups represented by R 1 described above and one amino group are bonded to one Si atom in one molecule.
  • Specific examples include trimethylsilylamines such as trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tert-butylamine, hexamethyldisilazane, trimethylsilylpiperidine, and N-(trimethylsilyl)-imidazole; at least one of the above trimethylsilylamines; Compounds in which three trimethylsilyl groups are substituted with any of the following: ethyldimethylsilyl group, propyldimethylsilyl group, butyldimethylsilyl group, hexyldimethylsilyl group, octyldimethylsilyl group, or decyldimethylsilyl group (specifically, ethyldimethyls
  • trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tert-butylamine, hexamethyldisilazane the above trimethylsilyl Compounds in which at least one trimethylsilyl group of amines (trimethylsilyldimethylamine, trimethylsilyldiethylamine, N-(trimethylsilyl)-tertiarybutylamine, and hexamethyldisilazane) is an ethyldimethylsilyl group, compounds in which a propyldimethylsilyl group is a propyldimethylsilyl group, butyldimethyl Compounds that are silyl groups, compounds that are hexyldimethylsilyl groups, compounds that are octyldimethylsilyl groups, and compounds that are decyldimethylsilyl groups
  • At least one selected from the group consisting of trimethylsilyldimethylamine, trimethylsilyldiethylamine, and N-(trimethylsilyl)-tert-butylamine is more preferable.
  • at least one selected from the group consisting of trimethylsilyldimethylamine, propyldimethylsilyldimethylamine, and butyldimethylsilyldimethylamine is preferable.
  • the lower limit of the content of the silylating agent is, for example, 0.3% by mass or more, preferably 1% by mass or more, and more preferably 2% by mass or more based on 100% by mass of the surface treatment composition.
  • the surface treatment composition tends to increase the water contact angle.
  • the upper limit of the content of the silylating agent is, for example, 30% by mass or less, preferably 25% by mass or less, more preferably 20% by mass or less, still more preferably 15% by mass, based on 100% by mass of the surface treatment composition. It is as follows. Thereby, storage stability can be improved.
  • the lower limit of the content of the silicon compound is, for example, 50% by mass or more, preferably 70% by mass or more, more preferably 80% by mass or more, still more preferably 90% by mass or more, and even more preferably is 95% by mass or more.
  • the surface treatment composition tends to increase the water contact angle.
  • the upper limit of the content of the silicon compound is not particularly limited in 100% by mass of the silylating agent, but may be 100% by mass or less, and in the case of using a plurality of silylating agents in combination, 98% by mass or less.
  • the surface treatment composition contains one or more hydrocarbon solvents as a solvent.
  • hydrocarbon solvent examples include hydrocarbons having 5 to 24 carbon atoms that are liquid at 1 atm, and may be hydrocarbons having not only a linear structure but also a branched or cyclic structure. Further, the hydrocarbon contained may have a double bond, and some of the hydrogen atoms may be substituted with halogen atoms.
  • hydrocarbon solvents include n-hexane, n-heptane, n-octane, n-nonane, n-decane, n-undecane, n-dodecane, n-tridecane, n-tetradecane, n-hexadecane, Linear saturated aliphatic hydrocarbons such as n-octadecane and n-icosane, as well as branched saturated aliphatic hydrocarbons corresponding to their carbon numbers, cyclohexane, methylcyclohexane, ethylcyclohexane, propylcyclohexane, isopropylcyclohexane, butylcyclohexane, amylcyclohexane , 1,1,3-trimethylcyclohexane, 1,1,4-trimethylcyclohexane, 1,2,3-trimethylcyclohexane,
  • Cyclic hydrocarbons menthane (o-, m-, or p-), diphenylmenthane, limonene, terpinene ( ⁇ -, ⁇ -, or ⁇ -), bornane, norbornane, pinane, pinene ( ⁇ -, or ⁇ -) ), cyclic hydrocarbons such as calan, longifolene, benzene, allylbenzene, toluene, styrene, xylene, (o-, m-, or p-), ethylbenzene, 1,2-diethylbenzene, 1,3-diethylbenzene, 1 Aromatic carbonization of ,4-diethylbenzene, 1,2,3-trimethylbenzene, 1,2,4-trimethylbenzene, 1,3,5-trimethylbenzene, n-butylbenzene, isobutylbenzene, tert-butylbenzene, etc.
  • Examples include hydrogen, halogenated hydrocarbons such as 1,3-bis(trifluoromethyl)benzene, 1,4-bis(trifluoromethyl)benzene, and the like. These may be used alone or in combination of two or more. Among these, from the viewpoint of ease of increasing the water contact angle, 1,2,4-trimethylbenzene, 1,3,5-trimethylbenzene, tert-butylbenzene, ethylbenzene, 1,3- At least one selected from the group consisting of bis(trifluoromethyl)benzene, 1,4-bis(trifluoromethyl)benzene, p-xylene, n-nonane, and isododecane is preferred, and 1,2,4-trimethylbenzene , 1,3,5-trimethylbenzene, tert-butylbenzene, ethylbenzene, 1,3-bis(trifluoromethyl)benzene, 1,4-bis(trifluoromethyl)benzene,
  • the ease with which the water contact angle can be increased is determined by applying a surface treatment composition under predetermined conditions to a smooth silicon wafer surface with a thermally oxidized film, with iPA in a liquid state, as described later in Examples.
  • the water contact angle was measured at 5 points on the sample obtained by supplying steam for 40 seconds, washing with iPA, and drying, and the evaluation was based on the average value obtained.
  • the hydrocarbon solvent contains an aromatic hydrocarbon.
  • aromatic hydrocarbons 1,2,4-trimethylbenzene, 1,3,5-trimethylbenzene, tert-butylbenzene, ethylbenzene, 1,3-bis(trifluoromethyl)benzene, 1,4-bis( It is more preferable to include at least one selected from the group consisting of trifluoromethyl)benzene and p-xylene.
  • the variation in the water contact angle was evaluated by the standard deviation calculated from the measurement results of the water contact angle at the five points of the sample mentioned above.
  • the solvent is 75% by mass or more, preferably 80% by mass or more, more preferably 85% by mass or more, still more preferably 90% by mass or more, even more preferably 97% by mass or more, and even more preferably Contains 99% by mass or more of a hydrocarbon solvent.
  • the surface treatment composition tends to increase the water contact angle.
  • the solvent may consist essentially of a hydrocarbon solvent. Note that the content of the hydrocarbon solvent may be 100% by mass. In this case, undetectable amounts of other solvents are allowed to be present.
  • the solvent is 25% by mass or less, preferably 20% by mass or less, more preferably 15% by mass or less, even more preferably 10% by mass or less, even more preferably 5% by mass or less, and even more preferably
  • Other solvents than the above-mentioned hydrocarbon solvents may be contained as long as the amount is 3% by mass or less, more preferably 1% by mass or less.
  • Other solvents are preferably aprotic solvents, such as esters, ketones, halogen-containing solvents (halogenated hydrocarbons in which at least some of the hydrogen atoms in the hydrocarbon solvent are replaced with halogen atoms such as fluorine atoms). ), derivatives of polyhydric alcohols having no OH group, etc. may be used, and propylene glycol monoethyl ether acetate (PGMEA) is preferably used.
  • PMEA propylene glycol monoethyl ether acetate
  • the total content of the silicon compound and the hydrocarbon solvent is, for example, 60% by mass or more, preferably 80% by mass or more, more preferably 95% by mass based on 100% by mass of the surface treatment composition. That's all. This facilitates increasing the water contact angle.
  • the surface treatment composition may be composed only of a silylating agent and a hydrocarbon solvent, and is preferably composed only of the silicon compound and a hydrocarbon solvent.
  • the surface treatment composition has a boiling point difference between the boiling point of the solvent and the boiling point of the silylating agent at 1 atm (boiling point of the solvent - boiling point of the silylating agent), for example, 10°C or more, preferably 20°C or more, and more preferably is 30°C or higher, more preferably 40°C or higher, even more preferably 50°C or higher, even more preferably 55°C or higher.
  • the solvent with a high boiling point preferentially aggregates on the wafer surface and is replaced with the cleaning solution, thereby suppressing the deactivation of the silylating agent due to contact with the cleaning solution, and as a result, the surface treatment composition Easy to increase water contact angle.
  • the boiling point of the solvent may be such that the silylating agent is not thermally decomposed during vaporization, and the above-mentioned difference in boiling point is not particularly limited.
  • the temperature may be 200°C or lower, 180°C or lower, 150°C or lower, 130°C or lower, or 110°C or lower.
  • the boiling point of a solvent and silylating agent containing multiple types the boiling point of the component with the highest content (mass%) among the components contained in the solvent and silylating agent is adopted (however, if the component with the highest content If two or more types exist, the boiling point of the one with the highest temperature is used.)
  • the surface treatment composition preferably has a low water content, and is particularly preferably substantially free of water.
  • the surface treatment composition of the present embodiment can contain other components other than the above-mentioned components within a range that does not impede the object of the present invention.
  • examples of other components include silylating agents other than the silicon compounds mentioned above, solvents other than hydrocarbon solvents, surfactants, and antioxidants such as BHT (dibutylhydroxytoluene). .
  • the surface treatment composition may be configured such that the surface treatment composition does not contain the acyclic carbonate or contains the acyclic carbonate in an amount of 2% by mass or less based on 100% by mass of the surface treatment composition. . By keeping it within the above range, storage stability can be improved. Furthermore, the surface treatment composition may be substantially free of acyclic carbonate. Note that "substantially not included” means that it does not affect the performance of the surface treatment composition, and may be, for example, 1% by mass or less in the surface treatment composition.
  • the surface treatment composition may not contain a catalyst, or may be configured to contain a catalyst in an amount of 2% by mass or less based on 100% by mass of the surface treatment composition.
  • the catalyst is something that promotes the reaction between the wafer surface and the silylation agent (the silicon compound mentioned above). Further, for the purpose of further improving storage stability, it may be substantially free of catalyst. Note that “substantially not included” means that it does not affect the performance of the surface treatment composition, and may be, for example, 1% by mass or less in the surface treatment composition.
  • the surface treatment composition of this embodiment is obtained by mixing the above-mentioned components.
  • the obtained mixed liquid may be purified using an adsorbent, a filter, or the like, if necessary. Further, each component may be purified in advance by distillation, or by using an adsorbent, a filter, or the like.
  • the surface treatment composition has a water contact angle on the silicon wafer surface after surface treatment measured by the following procedure, for example, more than 80°, preferably 81° or more, more preferably 83° or more, and still more preferably 85°.
  • the angle is more preferably 87° or more, and even more preferably 89° or more. It can be said that the larger the water contact angle, the easier it is for the surface treatment composition to increase the water contact angle. (procedure)
  • a silicon wafer with a thermal oxide film layer on the surface was immersed in 1% by mass hydrofluoric acid at 25°C for 10 minutes, in pure water for 1 minute at 25°C, and in 2-propanol (iPA) for 1 minute at 25°C. and wash.
  • the cleaned silicon wafer is placed horizontally with iPA filled therein, and the vapor of the surface treatment composition is supplied to the silicon wafer. Subsequently, on the surface of the silicon wafer, the state of the vapor is changed to liquid, and the iPA held on the surface is replaced with the liquid. Subsequently, the silicon wafer is immersed in iPA at 25° C. for 1 minute. After that, air is blown onto the silicon wafer to remove the iPA on the surface.
  • the above water contact angle is measured on the silicon wafer surface obtained through the above steps using 2 ⁇ l of pure water in accordance with JIS R 3257:1999 "Wettability test method for substrate glass surface”. . Measurements are performed at five points on the silicon wafer sample described above, and the average value is employed as the "water contact angle”. Further, the standard deviation calculated from the measurement results of water contact angles at the five points mentioned above is employed as "variation in water contact angles.”
  • the surface treatment composition has a number of particles larger than 0.2 ⁇ m measured using a light scattering particle-in-liquid detector, for example, 1.0 ⁇ 10 4 or less per mL of the surface treatment composition,
  • the number is preferably 1.0 ⁇ 10 3 or less, more preferably 1.0 ⁇ 10 2 or less.
  • the number of particles larger than 0.2 ⁇ m is as small as possible, but there may be one or more particles per mL of the composition as long as the content is within the above content range.
  • Particles in the liquid phase in the surface treatment composition are measured using a commercially available measuring device using a light scattering particle-in-liquid measurement method using a laser as a light source.
  • (Polystyrene latex) Means the light scattering equivalent diameter based on standard particles.
  • Particles are particles such as dust, dirt, organic solids, and inorganic solids that are contained as impurities in the materials of each component of the surface treatment composition, and dust, dirt, and organic solids that are introduced as contaminants during the preparation of the composition. These include particles such as solids and inorganic solids, which ultimately exist as particles without being dissolved in the composition.
  • the surface treatment composition has a total content of Na, Mg, Ca, Mn, Fe, Cu, Li, Al, Cr, Ni, Zn, and Ag measured using inductively coupled plasma mass spectrometry on the surface.
  • the amount is, for example, 100 mass ppb or less, preferably 10 mass ppb or less, and more preferably 1 mass ppb or less.
  • each element may be 0.0001 mass ppb or more based on the total amount of the composition.
  • the wafer manufacturing method of the present embodiment includes a step of preparing a wafer having an uneven pattern on the surface, a step of cleaning the wafer by supplying a cleaning liquid to the surface of the wafer, and applying the above surface treatment composition to the surface holding the cleaning liquid. supplying vapor, changing the state of the vapor to a liquid on the surface, replacing the cleaning liquid with the liquid, and forming a water-repellent protective film on at least a portion of the surface.
  • a pre-rinsing (first rinsing) step, a post-rinsing (second rinsing) step, a drying step, a water-repellent protective film removal step, etc. may be performed.
  • the surface treatment composition used in the wafer manufacturing method of this embodiment can be the same as the surface treatment composition described above.
  • FIG. 1 is a schematic perspective view of a wafer 1 whose surface has a fine uneven pattern 2.
  • FIG. 2 is a schematic cross-sectional view of the wafer 1 showing a part of the aa' cross section in FIG.
  • FIG. 3 is a diagram showing a step of supplying vapor 9 of the composition to the recess 4 holding the liquid 8.
  • FIG. 4 is a diagram showing a step of cleaning the recess 4 in which the water-repellent protective film 11 is formed with the composition with the liquid 10.
  • a wafer 1 having an uneven pattern on its surface is prepared.
  • the following method which is an example of a method for forming the uneven pattern 2 on the wafer surface, may be used.
  • a resist is applied to a wafer surface, and then the resist is exposed to light through a resist mask, and the exposed resist or the unexposed resist is removed to produce a resist having a desired uneven pattern.
  • a resist having a concavo-convex pattern can be obtained by pressing a mold having a pattern against the resist.
  • the wafer is etched.
  • the substrate surface corresponding to the concave portions of the resist pattern is selectively etched.
  • a wafer 1 having a concavo-convex pattern 2 on its surface is obtained.
  • the wafer on which the uneven pattern 2 is formed and the material of the uneven pattern 2 are not particularly limited.
  • various wafers can be used, such as a silicon wafer, a silicon carbide wafer, a wafer made of a plurality of components including a silicon element, a sapphire wafer, and various compound semiconductor wafers.
  • the material of the uneven pattern 2 is selected from the group consisting of Si, Ti, Ge, W, and Ru, and oxides, nitrides, nitrogen oxides, carbonitrides, and carbide oxides containing one or more of these. It may contain one or more.
  • the material of the uneven pattern 2 may be silicon-based materials such as silicon oxide, silicon nitride, polycrystalline silicon, single crystal silicon, silicon germanium, metal-based materials such as titanium nitride, tungsten, ruthenium, tantalum nitride, tin, etc.
  • a combination of materials, resist (photoresist) materials, etc. can be used.
  • the uneven pattern 2 includes, for example, one or more structures arranged along the vertical direction of the surface, and/or one or more structures arranged along the horizontal direction perpendicular to the vertical direction. It may have a three-dimensional structure.
  • An example of such a three-dimensional structure may constitute at least a portion of a logic device or a memory device, such as a FinFET, nanowire FET, nanosheet FET, or other multi-gate FET, three-dimensional memory Examples include cells.
  • FIG. 2 is a cross-sectional view showing an example of the uneven pattern 2.
  • the pattern dimension of the uneven pattern 2 can be defined as at least one dimension in the width direction in the in-plane direction of the surface and/or at least one dimension in the height direction in the direction perpendicular to the surface.
  • the width At least one pattern dimension of (length in the X-axis direction), height (length in the Y-axis direction), and depth (length in the Z-axis direction) may be, for example, 30 nm or less, or 20 nm or less. , 10 nm or less. This may be the spacing between patterns. Even when a wafer 1 having such a fine uneven pattern 2 is used, the surface treatment composition of this embodiment can be applied.
  • Such a surface treatment composition is suitable for use, for example, in surface treating a wafer 1 having a concavo-convex pattern 2 with a pattern size of 30 nm or less, preferably 20 nm or less.
  • the aspect ratio of the convex portion 3 may be, for example, 3 or more, 5 or more, or 10 or more. Even in the uneven pattern 2 having the convex portions 3 having a fragile structure, pattern collapse can be suppressed. On the other hand, the aspect ratio of the convex portion 3 is not particularly limited, but may be 100 or less. The aspect ratio of the convex portion 3 is expressed as a value obtained by dividing the height 6 of the convex portion by the width 7 of the convex portion.
  • the width 5 of the recess may be, for example, 70 nm or less, preferably 45 nm or less.
  • the width 5 of the recessed portion is indicated by the distance between adjacent convex portions 3 in the cross-sectional view of FIG.
  • the surface of the wafer 1 is cleaned with a cleaning liquid.
  • the surface of the wafer 1 may be brought into contact with an aqueous cleaning solution that is one of the cleaning solutions.
  • the aqueous cleaning solution include water, alcohol, ammonium hydroxide aqueous solution, tetramethylammonium aqueous solution, hydrofluoric acid aqueous solution, hydrochloric acid aqueous solution, hydrogen peroxide aqueous solution, sulfuric acid aqueous solution, and organic solvents. These may be used alone or in combination of two or more.
  • the cleaning step may be performed once or twice or more before the surface treatment step or the first rinsing step described below. Other steps may be included between the cleaning steps and the surface treatment step.
  • the surface of the wafer 1 may be brought into contact with a first rinsing solution, which is one of the cleaning solutions (first rinsing step).
  • a cleaning solution different from the aqueous cleaning solution can be used, such as water, an organic solvent, a mixture thereof, or at least one of an acid, an alkali, a surfactant, and an oxidizing agent.
  • examples include those in which these are mixed.
  • the organic solvent used in the first rinsing solution include hydrocarbons, esters, ethers, ketones, halogen element-containing solvents, sulfoxide-based solvents, alcohols, polyhydric alcohol derivatives, nitrogen element-containing solvents, etc. It will be done. Among these, it is preferable to use at least one kind selected from alcohols having 3 or less carbon atoms such as methanol, 1-propanol, and 2-propanol (isopropanol) as the organic solvent.
  • rinsing can be performed using a solution containing an acid aqueous solution or an alkaline aqueous solution, and then an organic solvent.
  • an aqueous cleaning solution may be added, and the cleaning may be carried out in the following order: a solution containing an acid aqueous solution or an alkaline aqueous solution, an aqueous cleaning solution, and an organic solvent.
  • the first rinsing step may be performed once or twice or more after the cleaning step or before the surface treatment step. Other steps may be included between the plurality of first rinsing steps or between the first rinsing step and the surface treatment step.
  • a spin cleaning apparatus that cleans the wafers one by one by supplying the cleaning liquid near the center of rotation while holding the wafer almost horizontally and rotating the wafer can be used.
  • cleaning methods include a single-wafer method and a batch method using a cleaning device that immerses and cleans a plurality of wafers in a cleaning tank.
  • the cleaning liquid may be supplied in the form of steam, as in the surface treatment composition described below. Thereby, the cleaning liquid can be held in at least the concave portions 4 of the concavo-convex pattern 2 of the wafer 1.
  • the vapor 9 of the surface treatment composition of this embodiment is supplied to the surface of the uneven pattern, and the vapor 9 is transferred to the liquid 10 on the wafer surface.
  • a water-repellent protective film protecting film 11 is formed on at least a portion of the wafer surface, for example, the surface of the recess 4.
  • the cleaning liquid (liquid 8) retained on the wafer surface may be the above-mentioned aqueous cleaning solution or the first rinsing solution.
  • a rinsing solution of 2-propanol (iPA) is preferred, and may also contain 2-propanol (iPA). That is, in one embodiment of the wafer manufacturing method, the vapor 9 of the surface treatment composition may be supplied while iPA is held on the surface of the wafer.
  • the wafer manufacturing method includes a step of mixing materials of each component of the surface treatment composition, and the total amount of moisture in the materials is, for example, 2000 mass ppm or less, preferably 500 mass ppm or less, based on the total amount of the materials.
  • the content may be less than or equal to 100 ppm by mass, more preferably less than 100 ppm by mass, and even more preferably less than 50 ppm by mass. The smaller the total amount of water in the material, the easier it is to obtain a surface treatment composition that increases the water contact angle, which is preferable.
  • the wafer 1 holding the liquid 8 in at least the recesses 4 of the uneven pattern 2 is placed in a chamber, and the surface treatment composition is separately evaporated.
  • Examples include a method of supplying steam to the surface of the uneven pattern through piping or a nozzle.
  • a carrier gas such as nitrogen gas or dry air may be used when supplying the steam.
  • the method of vaporizing the surface treatment composition is not particularly limited to the above method.
  • a predetermined amount of the surface treatment composition in a liquid state is introduced into a vaporization chamber, and sufficient heating is performed to evaporate the entire amount of the surface treatment composition, and after the entire amount has evaporated, the vapor 9 is supplied to the surface of the uneven pattern.
  • a batch-type vaporization method in which the vapor is sent to a pipe or nozzle.
  • droplets of the surface treatment composition may be dropped into a preheated small-scale vaporization section (for example, a part of the piping is provided with heating means), and each time the droplet is dropped, the entire amount of the surface treatment composition is removed.
  • a continuous vaporization method may be used in which the vapor 9 is sent to piping or a nozzle in order to be evaporated and supplied to the surface of the uneven pattern.
  • the temperature of vaporization is preferably suppressed to a temperature that does not cause thermal decomposition of the silylating agent, which is a protective film forming component.
  • Preferred steam treatment conditions include introducing nitrogen gas and supplying the mixed gas to the surface of the uneven pattern after the composition of the mixed gas of the steam obtained as described above and the nitrogen gas becomes constant. It will be done.
  • the ambient temperature near the substrate during processing that is, the temperature of the vapor, is preferably lower than the boiling point of the liquid 8 held in the recess 4. When this condition is satisfied, it is possible to prevent the liquid 8 held in the recesses from volatilizing before the surface treatment composition replaces the liquid 8, thereby making it easier to suppress pattern collapse of the uneven pattern 2.
  • FIG. 3 shows a schematic diagram of a state in which vapor 9 is supplied to the recess 4 holding the liquid 8.
  • FIG. 4 shows a schematic diagram of the recess 4 in which the water-repellent protective film 11 is formed using the surface treatment composition.
  • the wafer 1 shown in the schematic diagrams of FIGS. 3 and 4 shows a part of the aa' cross section of FIG.
  • the supplied vapor 9 changes state to liquid 10 in the recess 4, and the liquid 10 replaces the liquid 8 held in the recess 4, and the liquid 10 is held in the recess 4. be done. Further, for the purpose of promoting or stabilizing the above state change, the temperature of the wafer 1 and the recess 4 may be lowered or kept constant.
  • the silylating agent of the liquid 10 reacts with the wafer surface, and the above-mentioned site having the water-repellent functional group is fixed to the wafer surface, thereby forming a water-repellent protective film (protective film 11). Ru.
  • the protective film 11 does not necessarily have to be formed continuously or uniformly, but it can provide better water repellency, so it can be formed continuously and uniformly. It is more preferable that the
  • the surface of the uneven pattern 2 on the surface of the wafer 1 is It becomes possible to perform surface modification treatment, that is, formation of the protective film 11, before the dry state is reached. Thereby, pattern collapse of the uneven pattern 2 can be suppressed.
  • the formation of the protective film 11 may be promoted by applying known means such as heating treatment, reduced pressure treatment, drying treatment, etc. to the liquid 10 held on the wafer surface.
  • the wafer surface on which the protective film 11 is formed may be brought into contact with a second rinsing solution (second rinsing step).
  • second rinsing solution those exemplified for the first rinsing solution can be used.
  • rinsing can be performed by bringing water, an organic solvent such as isopropanol into contact in this order.
  • the second rinsing step may be performed once or twice or more after the surface treatment step. Other steps may be included between the plurality of second rinsing steps or between the second rinsing step and the surface treatment step.
  • a drying process may be performed to dry the surface of the wafer 1, if necessary.
  • the drying process allows the liquid present on the surface of the wafer 1 to be removed.
  • the liquid may include liquid 10, a second rinsing solution, or a mixture thereof.
  • known means such as spin drying, iPA (2-propanol) vapor drying, Marangoni drying, heat drying, hot air drying, vacuum drying, and reduced pressure drying may be used.
  • the drying step may be performed once or twice or more, for example, after the surface treatment step or after the second rinsing step. Note that the drying step and the second rinsing step may be repeated alternately.
  • the protective film 11 on the surface of the wafer 1 may be removed (removal step).
  • removal means include heating, UV irradiation, ozone exposure, plasma irradiation, corona discharge, and the like.
  • treatment with a concentrated fluid such as a supercritical fluid (which may contain an acid, a base, and an oxidizing agent) or steam treatment may be performed. These may be used alone or in combination of two or more. These treatments may be performed under atmospheric pressure or reduced pressure.
  • the present invention is not limited thereto.
  • the substrate manufacturing method of the present embodiment it is also possible to suppress collapse of the resist pattern by using the surface treatment composition of the present invention in the cleaning and drying steps of the resist pattern.
  • the supply step is not limited to this, and may be performed after various treatments performed on the concavo-convex pattern 2.
  • the method for manufacturing the substrate may use one or a combination of two or more known treatments. For example, after the above-described removal step, surface treatment such as plasma treatment may be performed.
  • Example 1 preparation of surface treatment composition
  • 5 g of trimethylsilyldimethylamine [(CH 3 ) 3 Si-N(CH 3 ) 2 ] (hereinafter abbreviated as "TMSDMA") as a silylating agent and 95 g of tert-butylbenzene as a solvent were mixed to form a surface treatment composition (hereinafter referred to as "TMSDMA”).
  • TMSDMA trimethylsilyldimethylamine
  • composition tert-butylbenzene
  • vapor of the above composition is applied to a wafer having a smooth surface to form a protective film on the wafer surface, and the protective film is formed on the surface of the wafer having an uneven pattern formed on the surface. It was evaluated using the following procedure.
  • a silicon wafer with a thermal oxide film which has a SiO 2 layer on a silicon wafer with a smooth surface, was used as the wafer with a smooth surface.
  • Example 2 to Example 31 and Comparative Example 1 to Comparative Example 2 The compositions were prepared in the same manner as in Example 1, except that the solvent shown in Table 1 was used, and various evaluations were performed. The results are shown in Table 1.
  • Table 1 the value of the boiling point difference between the silylating agent and the solvent is calculated using known literature values or catalog values, and "-" indicates that there is no literature value or the like and has not been calculated. Moreover, “-" in the water contact angle variation indicates that it has not been measured.
  • the solvent of Example 24 is a mixed solvent containing 60% by mass of 1,2,4-trimethylbenzene and 40% by mass of isododecane in the total amount of solvent
  • the solvent of Example 25 is a mixed solvent of 1,2,4-trimethylbenzene and 40% by mass of 1,2,4-trimethylbenzene.
  • the solvent of Example 26 is a mixed solvent of 60% by mass of trimethylbenzene and 40% of isododecane
  • the solvent of Example 27 is a mixed solvent of 60% by mass of tert-butylbenzene and 40% by mass of isododecane.
  • the solvent is a mixed solvent containing 98% by mass of 1,2,4-trimethylbenzene and 2% by mass of propylene glycol monoethyl ether acetate (PGMEA), and the solvent in Example 28 is 1,2,4-trimethylbenzene.
  • PGMEA propylene glycol monoethyl ether acetate
  • the solvent in Example 28 is 1,2,4-trimethylbenzene.
  • the solvent of Example 29 is a mixed solvent of 98% by mass of tert-butylbenzene and 2% by mass of PGMEA
  • the solvent of Example 30 is:
  • the mixed solvent contains 80% by mass of tert-butylbenzene and 20% by mass of PGMEA.
  • the solvent of Comparative Example 1 is a mixed solvent in which propylene carbonate is 47% by mass and diethyl carbonate is 53% by mass in the total amount of solvent, and the solvent of Comparative Example 2 is 1, 2, This is a mixed solvent containing 70% by mass of 4-trimethylbenzene and 30% by mass of PGMEA.
  • silylating agent in Examples 4 and 6 was propyldimethylsilyldimethylamine [PDMSDMA: CH 3 CH 2 CH 2 ) (CH 3 ) 2 Si-N(CH 3 ) 2 ], and in Example 5 and the silylating agent of Example 6 is butyldimethylsilyldimethylamine [BDMSDMA: (CH 3 CH 2 CH 2 CH 2 )(CH 3 ) 2 Si-N(CH 3 ) 2 ].
  • the surface treatment compositions of the present invention have a lower water contact angle than conventional ones. It can be said that it is easy to increase.

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