WO2023195546A1 - ヨウ素原子を有する環状化合物 - Google Patents

ヨウ素原子を有する環状化合物 Download PDF

Info

Publication number
WO2023195546A1
WO2023195546A1 PCT/JP2023/015256 JP2023015256W WO2023195546A1 WO 2023195546 A1 WO2023195546 A1 WO 2023195546A1 JP 2023015256 W JP2023015256 W JP 2023015256W WO 2023195546 A1 WO2023195546 A1 WO 2023195546A1
Authority
WO
WIPO (PCT)
Prior art keywords
formula
group
compound
represented
substituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/015256
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
正裕 松本
雅崇 飯沼
禎 大松
隆 佐藤
雅敏 越後
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP2024514332A priority Critical patent/JPWO2023195546A1/ja
Priority to KR1020247037226A priority patent/KR20250004735A/ko
Priority to CN202380032674.7A priority patent/CN118973989A/zh
Priority to US18/855,112 priority patent/US20250250216A1/en
Priority to JP2025513784A priority patent/JPWO2024214321A1/ja
Priority to KR1020257025196A priority patent/KR20260006548A/ko
Priority to TW112138810A priority patent/TW202441289A/zh
Priority to CN202380096847.1A priority patent/CN121057722A/zh
Priority to PCT/JP2023/036897 priority patent/WO2024214321A1/ja
Publication of WO2023195546A1 publication Critical patent/WO2023195546A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C29/00—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring
    • C07C29/62—Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom not belonging to a six-membered aromatic ring by introduction of halogen; by substitution of halogen atoms by other halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00—Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/48—Halogenated derivatives
    • C07C35/52—Alcohols with a condensed ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C41/00—Preparation of ethers; Preparation of compounds having groups, groups or groups
    • C07C41/01—Preparation of ethers
    • C07C41/18—Preparation of ethers by reactions not forming ether-oxygen bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C41/00—Preparation of ethers; Preparation of compounds having groups, groups or groups
    • C07C41/48—Preparation of compounds having groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C41/00—Preparation of ethers; Preparation of compounds having groups, groups or groups
    • C07C41/48—Preparation of compounds having groups
    • C07C41/50—Preparation of compounds having groups by reactions producing groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C41/00—Preparation of ethers; Preparation of compounds having groups, groups or groups
    • C07C41/48—Preparation of compounds having groups
    • C07C41/50—Preparation of compounds having groups by reactions producing groups
    • C07C41/52—Preparation of compounds having groups by reactions producing groups by substitution of halogen only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/257—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings
    • C07C43/295—Ethers having an ether-oxygen atom bound to carbon atoms both belonging to six-membered aromatic rings containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/30—Compounds having groups
    • C07C43/313—Compounds having groups containing halogen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C45/00—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
    • C07C45/61—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups
    • C07C45/63—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups by introduction of halogen; by substitution of halogen atoms by other halogen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C45/00—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds
    • C07C45/61—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups
    • C07C45/67—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups by isomerisation; by change of size of the carbon skeleton
    • C07C45/68—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms
    • C07C45/70—Preparation of compounds having >C = O groups bound only to carbon or hydrogen atoms; Preparation of chelates of such compounds by reactions not involving the formation of >C = O groups by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms by reaction with functional groups containing oxygen only in singly bound form
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C47/00—Compounds having —CHO groups
    • C07C47/52—Compounds having —CHO groups bound to carbon atoms of six—membered aromatic rings
    • C07C47/575—Compounds having —CHO groups bound to carbon atoms of six—membered aromatic rings containing ether groups, groups, groups, or groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/08—Preparation of carboxylic acid esters by reacting carboxylic acids or symmetrical anhydrides with the hydroxy or O-metal group of organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/14—Preparation of carboxylic acid esters from carboxylic acid halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/28—Preparation of carboxylic acid esters by modifying the hydroxylic moiety of the ester, such modification not being an introduction of an ester group
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C67/00—Preparation of carboxylic acid esters
    • C07C67/30—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group
    • C07C67/333—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton
    • C07C67/343—Preparation of carboxylic acid esters by modifying the acid moiety of the ester, such modification not being an introduction of an ester group by isomerisation; by change of size of the carbon skeleton by increase in the number of carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C68/00—Preparation of esters of carbonic or haloformic acids
    • C07C68/02—Preparation of esters of carbonic or haloformic acids from phosgene or haloformates
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C68/00—Preparation of esters of carbonic or haloformic acids
    • C07C68/06—Preparation of esters of carbonic or haloformic acids from organic carbonates
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
    • C07C69/12—Acetic acid esters
    • C07C69/14—Acetic acid esters of monohydroxylic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
    • C07C69/22—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen having three or more carbon atoms in the acid moiety
    • C07C69/28—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen having three or more carbon atoms in the acid moiety esterified with dihydroxylic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/02—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen
    • C07C69/22—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen having three or more carbon atoms in the acid moiety
    • C07C69/30—Esters of acyclic saturated monocarboxylic acids having the carboxyl group bound to an acyclic carbon atom or to hydrogen having three or more carbon atoms in the acid moiety esterified with trihydroxylic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/94—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/96—Esters of carbonic or haloformic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D309/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings
    • C07D309/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members
    • C07D309/08—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only ring hetero atom, not condensed with other rings having no double bonds between ring members or between ring members and non-ring members with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D309/10—Oxygen atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes

Definitions

  • the present invention relates to a cyclic compound having an iodine atom.
  • Patent Document 1 discloses a resist composition containing a compound having a structure in which a plurality of aromatic rings are crosslinked and having an iodine atom.
  • the resist composition has excellent etching resistance.
  • Patent Document 2 discloses a compound having a polymerizable group and an iodine atom. It is said that a resist composition containing the compound can form a resist pattern with excellent CD uniformity.
  • an object of the present invention is to provide a compound useful as a lithography composition.
  • Aspect 1 A compound represented by formula (1) described below.
  • Aspect 2 A lithographic composition comprising a compound according to aspect 1.
  • Aspect 3 The lithography composition according to aspect 2, which contains two or more kinds of compounds represented by formula (1).
  • Aspect 4 A composition comprising a compound according to aspect 1.
  • Aspect 5 The composition according to aspect 4, further comprising a compound represented by formula (DM0-1), formula (BP0-1), or a combination thereof described below.
  • Aspect 6 The compound represented by formula (DM0-1) is a compound represented by formula (DM1a), (Dn1), or (Da1) described below,
  • the compound represented by formula (BP0-1) is a compound represented by formula (BP1a), (BP2a), (Bn1), or (Ba1) described below.
  • Aspect 7 The composition according to aspect 5, comprising a compound represented by formula (DM0-1).
  • Aspect 8 The compound represented by formula (1) and formula (DM0-1) satisfies the following relationship, 0.1 ⁇ [Amount of compound of formula (DM0-1)] ⁇ [Amount of compound of formula (1)] ⁇ 0.000001 The composition according to any one of aspects 5 to 7.
  • Aspect 9 The composition according to aspects 5 to 8, wherein the compound represented by formula (DM0-1) is a compound represented by formula (DM1a), formula (Dn1), or formula (Da1).
  • Aspect 10 The composition according to aspect 5, comprising a compound represented by formula (BP0-1).
  • Aspect 11 The composition according to aspect 5 or 10, wherein the compound represented by formula (BP0-1) is a compound represented by formula (BP1a), formula (BP2a), formula (Bn1), or formula (Ba1).
  • Aspect 12 The compound represented by formula (BP0-1) is a compound represented by formula (BP1a) and Z is not I, a compound represented by formula (BP2a), formula (Bn1), or formula (Ba1), The composition according to aspect 5, 10 or 11.
  • Aspect 13 The compound represented by formula (1), formula (DM0-1), and formula (BP0-1) satisfies the following relational expression, 0.1 ⁇ ([total amount of compound of formula (DM0-1) and compound of formula (BP0-1)]) ⁇ [amount of compound of formula (1)] ⁇ 0.000001
  • Aspect 14 The composition according to any one of aspects 2 to 13, wherein RG in formula (1) is a group derived from a benzene ring which may have a substituent.
  • Aspect 15 The composition according to any one of aspects 2 to 13, wherein RG in formula (1) is a group derived from a naphthalene ring which may have a substituent.
  • Aspect 16 The lithography composition according to any one of aspects 2 to 13, wherein RG in formula (1) is a group derived from an adamantane ring which may have a substituent.
  • Aspect 17 The composition according to any one of aspects 2 to 16, wherein the content of metal impurities is less than 1 ppm.
  • Aspect 18 A method for producing a compound according to any one of Aspects 1 and 24 to 48, which comprises a step of introducing an iodine atom or an R 1 group into the compound containing the RG group.
  • a method for producing a compound represented by formula (1) comprising: The compound is represented by the formula (Bz) described below, 1) A step of preparing a compound represented by the formula (MB) described below, 2) an iodination step of iodinating the compound; 3) a protecting group introduction step of introducing a protecting group into the compound; and 4) a reduction step of reducing the compound.
  • a method for producing a compound represented by formula (1) comprising: The compound is represented by the formula (N) described below, 1) A step of preparing a compound represented by formula (MN), 2) an iodination step of iodinating the compound; 3) a protecting group introduction step of introducing a protecting group into the compound; and 4) a reduction step of reducing the compound.
  • Aspect 22 A method for producing a sensitizing effect in irradiation of a lithography composition using the compound according to any one of Aspects 1 and 24 to 48.
  • Aspect 23 23 The method according to aspect 22, wherein two or more of the compounds are used.
  • Aspect 24 RG is a group derived from benzene, naphthalene, anthracene, pyrene, heteroaromatics, or polycyclic alicyclics, which may have a substituent
  • Said R 1 is R f ' selected from the group consisting of one or more hydroxyl groups and ether groups having a protecting group that can be removed by acid, alkali, or heat, and zero or more carbon atoms that may contain substituents.
  • a compound according to aspect 1 is a group derived from benzene or naphthalene, which may have a substituent
  • Said R 1 is One or more R f selected from the group consisting of a hydroxyl group and an ether group having a protecting group, and zero or more hydrocarbon groups R g having 0 to 30 carbon atoms and optionally containing a substituent.
  • R f selected from the group consisting of a hydroxyl group and an ether group having a protecting group
  • R g having 0 to 30 carbon atoms and optionally containing a substituent.
  • the RG is a group derived from a polycyclic alicyclic group, which may have a substituent
  • Said R 1 is R f ' selected from the group consisting of one or more hydroxyl groups and ether groups having a protecting group that can be removed by acid, alkali, or heat, and zero or more carbon atoms that may contain substituents. Consisting of 0 to 30 hydrocarbon groups R g , A compound according to aspect 1.
  • the RG is a group derived from a polycyclic alicyclic group, which may have a substituent
  • Said R 1 is One or more R f selected from the group consisting of a hydroxyl group and an ether group having a protecting group, and zero or more hydrocarbon groups R g having 0 to 30 carbon atoms and optionally containing a substituent.
  • R f selected from the group consisting of a hydroxyl group and an ether group having a protecting group
  • R g having 0 to 30 carbon atoms and optionally containing a substituent.
  • the R 1 is a combination of an alkoxy group (excluding those with a protecting group) and an aldehyde group, a combination of the alkoxy group and a hydroxyl group, and does not contain a combination of hydroxyl and aldehyde groups
  • the R 1 does not include a combination of a hydroxyl group and a carboxyl group, A compound according to aspect 1, 24 or 25.
  • R1 is selected from -OR2 , -COOR3 , -CH2 - OR4 , or -CHO, here, R 2 is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms which may have a substituent, or an aryl group having 1 to 30 carbon atoms which may have a substituent, R 3 is a hydrogen atom, an alkyl group having 1 to 29 carbon atoms which may have a substituent, or an aryl group having 1 to 29 carbon atoms which may have a substituent, R 4 is a hydrogen atom, an alkyl group having 1 to 29 carbon atoms which may have a substituent, or an aryl group having 1 to 29 carbon atoms which may have a substituent, Embodiment 1, the compound according to any one of 24 to 28.
  • Aspect 30 The compound according to any one of embodiments 1 and 24 to 29, wherein R 1 has a protecting group.
  • Aspect 31 RG is benzene which may have a substituent, naphthalene which may have a substituent, anthracene which may have a substituent, phenanthrene which may have a substituent, or a substituent.
  • Aspect 32 RG is a group derived from benzene which may have a substituent, naphthalene which may have a substituent, or adamantane which may have a substituent, A compound according to aspect 31.
  • Aspect 33 33 is benzene which may have a substituent, naphthalene which may have a substituent, anthracene which may have a substituent, phenanthrene which may have a substituent, or a substituent.
  • Aspect 38 The compound according to aspect 37, which is represented by any of formulas (Bz1-1), (n), (2n), (3n), (1a), and (2a) described below.
  • Aspect 39 The compound according to aspect 33, which is represented by any of formula (1b), (Bz1-2-1), (Bz2), (1b-1), (Bz1-3-1), (Bz3) described below .
  • Aspect 40 The compound according to aspect 34, represented by any one of formulas (n), (2n), and (3n) described below.
  • Aspect 41 The compound according to aspect 40, which is represented by any one of formulas (1n'), (2n-1), (3n-1), and (3n-2) described below.
  • Aspect 42 The compound according to aspect 35, which is represented by either formula (1a) or (2a) described below.
  • Aspect 43 The R 1 is a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group,
  • A' represented by the above-mentioned -O-R a -O-R b
  • Aspect 44 Aspect 43 represented by any of formulas (1b-3), (Bz1-2-2), (Bz2-1), (1b-4), (Bz1-3-2), and (Bz3) described below Compounds described in.
  • Aspect 45 The compound according to aspect 34, 40, or 41, wherein R 1 is a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group.
  • Aspect 46 Aspects 34, 40, represented by any of formulas (1n), (1n'-1), (2n-1-1), (3n-1-1), (3n-2-1) described below, 41 or 45.
  • Aspect 47 43 The compound according to aspect 35 or 42, wherein R 1 is a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group.
  • Aspect 48 The compound according to aspect 35, 42, or 47, which is represented by either formula (1a-1) or (2a-1) described below.
  • Aspect 49 49.
  • the compound according to any one of aspects 1 and 24 to 48 which exhibits a sensitizing effect upon irradiation of a lithography composition.
  • Aspect 50 The compound according to any one of aspects 1 and 24 to 48, which is used for lithography.
  • a compound useful as a lithography composition can be provided. Furthermore, a sensitizing effect can be obtained by using the compounds and compositions of the present invention in lithography processes.
  • X ⁇ Y includes the end values of X and Y.
  • RG is a group containing at least one cyclic structure.
  • the valence of RG is appropriately adjusted by the number of substituents other than I, R 1 , and R 1 described later.
  • the group containing a cyclic structure may contain an aromatic ring, an alicyclic ring, or a heterocycle, but it is preferably a group having 6 to 60 carbon atoms, and more preferably a group derived from the following compounds. .
  • Aromatic rings such as benzene, naphthalene, biphenyl, anthracene, phenanthrene, pyrene, and fluorene; alicyclic rings such as cyclohexane, cyclododecane, dicyclopentane, tricyclodecane, or adamantane.
  • RG does not need to contain a ring assembly in which single rings are bonded by a single bond (eg, biphenyl, binaphthyl, bicyclopropyl, etc.).
  • RG is preferably a group having at least one cyclic structure specifically selected from a monocyclic aromatic ring structure, a fused ring aromatic structure, and a polycyclic alicyclic structure.
  • RG is preferably a group derived from benzene, naphthalene, phenanthrene, fluorene, or adamantane.
  • I is an iodine atom.
  • n represents the number of I and is an integer from 1 to 5. From the viewpoints of sensitizing effect, solubility in solvents, and chemical stability, n is preferably an integer of 1 to 3, more preferably 1 or 2. When n is larger than 1, a sensitizing effect can be obtained, and when n is 5 or less, the solubility of the compound in solvent components commonly used for semiconductors and the stability of the compound itself can be ensured. I can do it.
  • R 1 is a monovalent functional group having 0 to 30 carbon atoms and containing no polymerizable unsaturated bond, which may be the same or different.
  • a derivative of the compound of formula (1) can be produced by converting R 1 into another group or bonding with another group.
  • a polymerizable unsaturated bond is an ethylenic double bond or triple bond.
  • R 1 is a functional group and not an alkyl group.
  • R 1 is, for example, an alkoxy group having 1 to 30 carbon atoms, a carboxyl group having 1 to 30 carbon atoms, a carboxylic acid ester group having 2 to 10 carbon atoms, an alkoxyalkyl group or hydroxyalkyl group having 2 to 30 carbon atoms, or an aldehyde group. , a halogen atom other than iodine, a nitro group, an amino group, a thiol group, or a hydroxyl group.
  • R 1 is preferably a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group from the viewpoint of sensitizing effect and the like.
  • the groups that can have a substituent may have a substituent. "Substituted" means that one or more hydrogen atoms in a functional group are replaced with a substituent, unless otherwise defined.
  • the "substituent” is not particularly limited, but includes, for example, a halogen atom, a hydroxyl group, a cyano group, a nitro group, a thiol group, a heterocyclic group, a linear aliphatic hydrocarbon group having 1 to 20 carbon atoms, and a C3 ⁇ 20 branched aliphatic hydrocarbon groups, 3-20 carbon atoms cyclic aliphatic hydrocarbon groups, 6-20 carbon atoms aryl groups, 1-20 carbon atoms alkoxyl groups, 0-20 carbon atoms amino groups , an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, an acyl group having 1 to 30 carbon atoms (preferably an alkyloxy group having 1 to 20 carbon atoms, an aryloyloxy group having 7 to 30 carbon atoms) group), an alkoxycarbonyl group having 2 to 20 carbon atoms, or an alkyl
  • These groups may form a ring structure within a substituent or a group having a substituent, or with another R 1 .
  • Suitable examples of the group that may form a ring structure include a glycidyl group, a cyclic acetal group, and a group in which two adjacent hydroxyl groups form an acetal protecting group structure.
  • R 1 is preferably a group represented by -OR 2 , an alkoxy group having 1 to 30 carbon atoms, a hydroxyl group, a carboxyl group having 1 to 30 carbon atoms, a carboxylic acid ester group having 2 to 10 carbon atoms, a carbon It is selected from an alkoxyalkyl group having 2 to 30 carbon atoms, an alkoxyalkyl group having 2 to 30 carbon atoms, a hydroxyalkyl group having 1 to 10 carbon atoms, or an aldehyde group.
  • R 2 is a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, an aryl group having 1 to 30 carbon atoms, or a cyclic alkyl ether group having 1 to 5 carbon atoms.
  • the carboxyl group or carboxylic acid ester group is more preferably represented by -COOR3 .
  • R 3 is a hydrogen atom, an alkyl group having 1 to 29 carbon atoms, or an aryl group having 1 to 29 carbon atoms.
  • the alkoxyalkyl group or hydroxyalkyl group is more preferably represented by -CH2 - OR4 .
  • R 4 is a hydrogen atom, an alkyl group having 1 to 29 carbon atoms, or an aryl group having 1 to 29 carbon atoms.
  • the alkyl group or aryl group may have a substituent. Examples of the substituent include an alkoxy group. Therefore, in one embodiment, R2 of -OR2 may be -CH2 - OC2H5 .
  • the alkyl group in R 2 to R 4 is preferably a methyl group, ethyl group, or propyl group (including isomers; the same applies hereinafter).
  • the aryl group is preferably a phenyl group or a naphthyl group.
  • R 1 may have a protecting group.
  • a protecting group is a group that dissociates under specific conditions, and is also called a dissociable group.
  • the protecting group is preferably an acid-dissociable group that dissociates in the presence of an acid.
  • Preferred examples of the group include 1-substituted ethyl group, 1-substituted-n-propyl group, 1-branched alkyl group, silyl group, acyl group, 1-substituted alkoxymethyl group, cyclic ether group, alkoxycarbonyl group, or an alkoxycarbonylalkyl group.
  • R 1 may be a hydroxyl group or a carboxyl group protected by a protecting group.
  • R1 is -O- CH2 -O-R'.
  • R' is, for example, an alkyl group having 1 to 5 carbon atoms. This embodiment corresponds to the case where R 1 is -OR 2 (however, R 2 is CH 3 ) and R 2 has an alkoxy group (-O-R') as a substituent.
  • R 1 is a group having a protecting group, R 1 may be expressed as A or A' as described below.
  • m represents the number of R 1 and is an integer from 1 to 5. From the viewpoint of solubility in a solvent, m is preferably 4, 3, 2, or 1. When m is 2 or 3, a plurality of R 1 's may be different or the same. m is more preferably 2 or 3, and even more preferably 2. The total number of m and n is adjusted as appropriate depending on the valence of RG.
  • the compound may have an organic group other than R 1 as a substituent, if necessary.
  • the organic group include alkyl groups having 1 to 30 carbon atoms. A plurality of such groups may exist. However, it is preferable that the compound does not contain any organic groups other than R 1 and iodine.
  • R 1 does not include a combination of an alkoxy group and an aldehyde group, a combination of an alkoxy group and a hydroxyl group, or a combination of an aldehyde group and a hydroxyl group.
  • the alkoxy group here excludes those having a protecting group.
  • the alkoxy group is, for example, a methoxy group or an ethoxy group.
  • R 1 When RG is a group derived from benzene, naphthalene, anthracene, pyrene, heteroaromatics, or polycyclic alicyclics, R 1 preferably consists of one or more R f and zero or more R g become. Further, R 1 consists of one or more R f ′ and zero or more R g .
  • R f is an ether group having a hydroxyl group and a protecting group.
  • R f ' is a hydroxyl group or an ether group having a protecting group that is removed by acid, alkali, or heat.
  • R g is a hydrocarbon group having 0 to 30 carbon atoms that may contain a substituent.
  • R 1 when RG is a benzene or naphthalene structure, R 1 contains one or more R f selected from the group consisting of a hydroxyl group and an ether group having a protecting group, and zero or more substituents. It is preferable to consist of a hydrocarbon group R g having 0 to 30 carbon atoms. When the compound of formula (1) has these groups as R 1 , the reaction of linking the compound with another compound can proceed smoothly.
  • the compound of formula (1) can be linked to other compounds.
  • the compound of formula (1) can also be made into a dimer to a pentamer. The multimer will be described later.
  • RG is a benzene ring.
  • the compound represented by formula (1) (hereinafter referred to as "compound of formula (1)” etc.) is preferably represented by formula (Bz) from the viewpoint of sensitizing effect and ease of availability. .
  • R 1 is preferably a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group.
  • A is a group having a protecting group. Since A becomes a functional group by removing the protecting group, it is a type of R 1 .
  • the protecting group is preferably an acid-dissociable group. Therefore, the group having a protecting group is preferably a group in which a hydroxyl group or a carboxyl group is protected with an acid-dissociable group.
  • A can be A' represented by -O-R a -O-R b , and in this case, the compound of formula (Bz) preferably contains one or more A'. R a and R b will be described later.
  • R is a hydrogen atom or an organic group that is not a functional group.
  • examples of the organic group include alkyl groups having 1 to 30 carbon atoms.
  • Z is I, R 1 , H, or a linking group for forming a dimer.
  • Z is a linking group for forming a dimer, two molecules are bonded via a single bond to form a dimer.
  • the dimer is included in the compound represented by the formula (DM1a) described below.
  • Z does not need to contain a linking group for forming a dimer.
  • Z is particularly expressed as Z'.
  • R 1 , R, and A are bonded at any bondable position.
  • r1 to r4 are each independently an integer of 0 to 5, and their total number satisfies the valence of the benzene ring. However, at least one of r2 and r3 is 1 or more.
  • r1 to r4 are each independently preferably 1 to 4, more preferably 1 to 3, particularly preferably 1 or 2. Preferred embodiments of the compound will be described below from the viewpoint of sensitizing effect, ease of availability, etc.
  • the compound of formula (Bz) is preferably represented by formula (Bz1).
  • the compound of formula (Bz1) has one R 1 that is not derived from Z.
  • each substituent of a compound is defined the same as the group of compounds to which the compound belongs.
  • the compound of formula (Bz1) is preferably represented by formula (Bz1-1).
  • the compound of formula (Bz1-1) has one R 1 that does not originate from Z at the meta position of I.
  • the compound of formula (Bz1-1) is preferably represented by formula (1b), more preferably represented by formula (1b-3).
  • a and Z or A and Z' may form a cyclic structure together with a protecting group.
  • the compound of formula (Bz1-1) is preferably represented by formula (1b-1), more preferably represented by formula (1b-4).
  • the compound of formula (Bz1) is preferably represented by formula (Bz1-2).
  • the compound of formula (Bz1-2) has one R 1 that does not originate from Z at the para position of I.
  • a and Z may form a cyclic structure together with a protecting group.
  • Z and R 1 may form a cyclic structure together with a protecting group.
  • the compound of formula (Bz1-2) is preferably represented by formula (Bz1-2-1), more preferably represented by formula (Bz1-2-2).
  • a and Z or A and Z' may form a cyclic structure together with a protecting group.
  • the compound of formula (Bz1) is preferably represented by formula (Bz1-3).
  • the compound has one R 1 that is not derived from Z at the ortho position of I.
  • a and Z may form a cyclic structure together with a protecting group.
  • the compound of formula (Bz1-3) is preferably represented by formula (Bz1-3-1), more preferably represented by formula (Bz1-3-2).
  • A' is a group having a protecting group, and is -O-R a -O-R b , -O-CO-O-R b , -O-R a -CO-O-R b , or -O- It is represented by R a -O-CO-R b .
  • R a is a linear or branched alkyl group having 1 to 3 carbon atoms.
  • R b is a monovalent linear or branched alkyl group having 1 to 3 carbon atoms, or a cyclic alkyl group, or a divalent cyclic alkyl group, which forms a ring with adjacent oxygen atoms.
  • a cyclic structure containing R a and R b may be formed. However, there are one or more A's.
  • the compound of formula (Bz) is preferably represented by formula (Bz2).
  • the compound has two R 1s not derived from Z at positions that are not adjacent to each other.
  • Compound (Bz2) is preferably represented by formula (Bz2-1).
  • the compound of formula (Bz) is preferably represented by formula (Bz3).
  • the compound has two R 1s not derived from Z at positions adjacent to each other.
  • A' is defined as described above, and one or more A' exists.
  • the compound of formula (1b-1) is particularly preferred as the compound of formula (Bz1).
  • the compound has R 1 , two iodine atoms, and one or more A′.
  • the compound of formula (1b-1) will be explained below.
  • R 1 is preferably a hydroxyalkyl group or an aldehyde group, particularly preferably a hydroxyalkyl group.
  • the method of introducing a hydroxyalkyl group into the benzene nucleus is not limited, but for example, a method of introducing a carboxyl group as R 1 and then reducing it can be mentioned.
  • the reduction method can be carried out by a known method.
  • A' is a group having a protecting group, -O-R a -O-R b , -O-CO-O-R b , -O-R a -CO-O- It is represented by R b or -O-R a -O-CO-R b .
  • R a is a linear or branched alkyl group having 1 to 3 carbon atoms.
  • R b is a monovalent linear or branched alkyl group having 1 to 3 carbon atoms, or a cyclic alkyl group, or a divalent cyclic alkyl group, which forms a ring with adjacent oxygen atoms.
  • a cyclic structure containing R a and R b may be formed. However, there are one or more A's.
  • R b is a straight chain, branched or cyclic aliphatic group having 1 to 30 carbon atoms, an aromatic group having 6 to 30 carbon atoms, or a straight chain, branched or cyclic hetero atom having 1 to 30 carbon atoms. and an aromatic group containing a linear, branched or cyclic hetero atom having 1 to 30 carbon atoms.
  • the aliphatic group, aromatic group, aliphatic group containing a hetero atom, and aromatic group containing a hetero atom may further have a substituent. Examples of the substituent here include those mentioned above, but preferred are linear, branched or cyclic aliphatic groups having 1 to 20 carbon atoms, and aromatic groups having 6 to 20 carbon atoms.
  • R b is preferably an aliphatic group.
  • the aliphatic group in R b is preferably a branched or cyclic aliphatic group.
  • the aliphatic group preferably has 1 to 20 carbon atoms, more preferably 3 to 10 carbon atoms, and even more preferably 4 to 8 carbon atoms.
  • Examples of the aliphatic group include, but are not limited to, a methyl group, an isopropyl group, a sec-butyl group, a tert-butyl group, an isobutyl group, a cyclohexyl group, a methylcyclohexyl group, an adamantyl group, and the like. Among these, a tert-butyl group, a cyclohexyl group, or an adamantyl group is preferred.
  • R b groups having the following structures can be used.
  • A' is in another embodiment represented by -CO-O-R b or -C-CyE.
  • CyE is a cyclic ester group which may have a substituent.
  • A' is preferably a group represented by the following formula, for example.
  • R 1 is a combination of an alkoxy group (excluding those with a protecting group) and an aldehyde group, or an alkoxy group (excluding those with a protecting group). and hydroxyl groups, and combinations of aldehyde groups and hydroxyl groups.
  • R 1 is preferably a hydroxyl group, a carboxyl group, an ester group, an aldehyde group, or a hydroxyalkyl group.
  • A' is preferably represented by -O-R a -O-R b .
  • RG is a naphthalene ring.
  • the compound is preferably represented by formula (N) from the viewpoints of sensitizing effect and ease of availability.
  • R 1 is a monovalent functional group having 0 to 30 carbon atoms and containing no polymerizable unsaturated bond, which may be the same or different.
  • R 1 is defined the same as in the first embodiment, but from the viewpoint of sensitizing effect, etc., R 1 is preferably a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group.
  • A is a group having a protecting group.
  • A can be A' represented by -O-R a -O-R b , and in this case, the compound of formula (N) preferably contains one or more A'.
  • R" is a hydrogen atom or an organic group other than R 1.
  • s1 is an integer of 1 to 7
  • s2 to s4 are integers of 0 to 7, and the sum thereof satisfies the valence of the naphthalene ring.
  • at least one of s2 and s3 is 1 or more.
  • s1 is preferably 1-5, more preferably 1-3.
  • s2 and s3 are independently preferably 0 to 5, more preferably 1 to 3.
  • Preferred compounds will be described below from the viewpoint of sensitizing effect, easy availability, and the like.
  • the compound in which RG is a naphthalene ring may have a linking group Z for forming a dimer.
  • the compound is represented by formula (N').
  • each substituent is defined as described above, and the bonding position thereof is also arbitrary.
  • s1 is an integer of 1 to 7
  • s2 to s4 are integers of 0 to 7
  • s5 is an integer of 1 to 2, and the sum of these satisfies the valence of the naphthalene ring.
  • at least one of s2 and s3 is 1 or more.
  • the compound of formula (N) is preferably represented by formula (n), formula (2n), or formula (3n).
  • R 1 , A, and R'' are defined the same as in formula (N).
  • x and y are 0 or 1, provided that at least one of them is 1.
  • , represents the number of R'' that can be bonded to the 8th position (however, the carbon at the top of the right ring is the 1st position, the same applies hereinafter), and is an integer from 1 to 3.
  • the compound of formula (n) is preferably represented by formula (1n), more preferably represented by (1n-1). As described above, when a plurality of R 1 exists, the R 1 does not include a combination of a hydroxyl group and a carboxyl group.
  • the compound of formula (n) is preferably represented by formula (1n'), more preferably represented by (1n'-1). As described above, when a plurality of R 1 exists, the R 1 does not include a combination of a hydroxyl group and a carboxyl group.
  • the compound of formula (2n) is preferably represented by formula (2n-1), more preferably represented by (2n-1-1). As described above, when a plurality of R 1 exists, the R 1 does not include a combination of a hydroxyl group and a carboxyl group.
  • the compound of formula (3n) is preferably represented by formula (3n-1), more preferably represented by (3n-1-1). As described above, when a plurality of R 1 exists, the R 1 does not include a combination of a hydroxyl group and a carboxyl group.
  • the compound of formula (3n) is preferably represented by formula (3n-2), more preferably represented by formula (3n-2-1). As described above, when a plurality of R 1 exists, the R 1 does not include a combination of a hydroxyl group and a carboxyl group.
  • R c in the following exemplified compounds is a monovalent group having 0 to 29 carbon atoms and containing no polymerizable unsaturated bond.
  • A is a group having a protecting group.
  • A is as follows.
  • RG is an alicyclic ring having a polycyclic structure having 3 to 30 carbon atoms. Substituents such as I and R 1 on the alicyclic ring may be present at any position. Specific examples of the alicyclic ring include the following structures. These alicyclic rings may have further alicyclic structures.
  • RG is preferably an adamantane ring. Therefore, in this embodiment, the compound of formula (1) is preferably represented by formula (Ad).
  • I, R 1 , and R" are defined as above, with the proviso that I, R 1 , and R" are bonded to any position of the adamane ring.
  • the protecting group is preferably an acid-dissociable group as described above. Therefore, the group having a protecting group is preferably a group in which a hydroxyl group or a carboxyl group is protected with an acid-dissociable group.
  • R 1 is preferably a hydroxyl group, a carboxyl group, an ester group, or a hydroxyalkyl group from the viewpoint of sensitizing effect and the like.
  • R 1 may be A, or may be A' represented by -O-R a -O-R b .
  • the compound of formula (Ad) contains one or more A.
  • t1 is an integer of 1 to 10
  • t2 is an integer of 1 to 9
  • t3 is an integer of 0 to 14, and the sum of these satisfies the valence of the adamantane ring.
  • t1 is preferably 1-5, more preferably 1-3.
  • t2 is preferably 1-5, more preferably 1-3.
  • t3 is preferably 0-13, more preferably 5-13, even more preferably 8-13.
  • the compound in which RG is an adamantane ring may have a linking group Z for forming a dimer at any position.
  • the compound of formula (Ad) is preferably represented by formula (Ad1).
  • one of D is I and the other of D is R 1 .
  • two Ds are R 1 .
  • the compound of formula (Ad1) is preferably represented by formula (1a), (2a), or (3a).
  • the compounds of formulas (1a), (2a), and (3a) are preferably represented by the following formula.
  • the compound of formula (Ad1) is preferably represented by the following formula.
  • R" is a hydrogen atom or an organic group other than R1 .
  • the organic group is as described in the first embodiment or the second embodiment.
  • the compound preferably has 1 to 2 I atoms. .
  • R 1 is preferably a hydroxyl group, a carboxyl group, an ester group (which may have a substituent such as a halogen other than iodine), or a hydroxyalkyl group.
  • RG preferably does not include a ring assembly in which single rings are bonded to each other through a single bond (eg, biphenyl, binaphthyl, bicyclopropyl, etc.).
  • RG is preferably a group having at least one cyclic structure specifically selected from a monocyclic aromatic ring structure, a fused ring aromatic structure, and a polycyclic alicyclic structure.
  • at least a portion of R 1 is preferably the following group, and connects two or more molecules.
  • the carbonate ester group may be an alkoxycarbonyloxy group or an aryloxycarbonyloxy group, which may have a substituent.
  • the compound of formula (1) is a multimer
  • the compound is preferably represented by the following formula.
  • RG, I, and R 1 are defined as in formula (1).
  • n' is an integer from 1 to 5 and less than or equal to n.
  • m' is an integer from 1 to 5 and less than or equal to m.
  • b is an integer from 1 to 4.
  • n' is preferably 1-3.
  • m' is preferably 1-4.
  • b is preferably 1 to 3, more preferably 1 or 2.
  • Q is a single bond or a group originating from R 1 that bonds between molecules. When Q is due to Z, Q is a single bond, meaning that the repeating units are connected by a single bond. When Q is due to R 1 that bonds between molecules, Q is, for example, an ester group.
  • R, R 1 , A, Z, and r1 to r4 are defined the same as in the compound of formula (Bz).
  • Z is preferably H or R 1 .
  • the compound of formula (DM1a) is preferably a compound represented by formula (DM1b).
  • I, R, R 1 , A, and Z are defined as in formula (DM1a), and 3a is an integer of 0 to 4, preferably 0 or 1.
  • the compound represented by formula (DM1b) is preferably a compound represented by formula (DM1c1).
  • I, R, R 1 , A, and Z are defined as in formula (DM1a), and 3a is an integer of 0 to 4, preferably 0 or 1.
  • the compound represented by formula (DM1c1) is preferably a compound represented by formula (DM1d11).
  • I, R, R 1 , A, and Z are defined as in formula (DM1a), and 3a is an integer of 0 to 4, preferably 0 or 1.
  • the compound represented by formula (DM1c1) is preferably a compound represented by formula (DM1d12).
  • I, R, R 1 and Z are defined as in formula (DM1a).
  • A' is a group having a protecting group, and is -O-R a -O-R b , -O-CO-O-R b , or -O-R a -CO-O-R b , or - It is represented by O-R a -O-CO-R b .
  • R a is a linear or branched alkyl group having 1 to 3 carbon atoms.
  • R b is a monovalent linear or branched alkyl group having 1 to 3 carbon atoms, or a cyclic alkyl group, or a divalent cyclic alkyl group, which forms a ring with adjacent oxygen atoms. ing. A cyclic structure containing R a and R b may be formed. However, there are one or more A's.
  • the compound represented by formula (DM1b) is preferably a compound represented by formula (DM1c2).
  • the compound represented by formula (DM1c2) is preferably a compound represented by formula (DM1d21) below.
  • the compound represented by formula (DM1c1) is preferably a compound represented by formula (DM1d22).
  • the compound represented by formula (DM1b) is preferably a compound represented by formula (DM1c3).
  • the compound represented by formula (DM1c3) is preferably a compound represented by formula (DM1d31).
  • the compound represented by formula (DM1b) is preferably a compound represented by formula (DM1c4).
  • the compound represented by formula (DM1c4) is preferably a compound represented by formula (DM1d41).
  • dimer compound An example of a dimer compound is shown below.
  • I, R, R 1 and A are defined as in formula (Bz).
  • the compound corresponds to a compound of formula (1b) in which Z is a linking group for forming a dimer.
  • nd is an integer from 1 to 4. It is preferable that Q is a single bond and nd is 1.
  • the compound represented by formula (Dn1) is preferably a compound represented by formula (Dn1a).
  • I, R 1 , R'', A, and nd are defined the same as in formula (Dn1).
  • x and y are each 0 or 1, and at least one of x and y is 1.
  • s4' represents the number of R'' bonded to the 1st, 7th, and 8th positions of the naphthalene ring.
  • the compound represented by formula (Dn1a) is preferably a compound represented by formula (Dn1b1).
  • the compound represented by formula (Dn1b1) is preferably a compound represented by formula (Dn1c11).
  • the compound represented by formula (Dn1b1) is preferably a compound represented by formula (Dn1c12).
  • the compound represented by formula (Dn1a) is preferably a compound represented by formula (Dn1b2).
  • the compound represented by formula (Dn1b2) is preferably a compound represented by formula (Dn1c21).
  • the compound represented by formula (Dn1a) is preferably a compound represented by formula (Dn1b3).
  • the compound represented by formula (Dn1b3) is preferably a compound represented by formula (Dn1c31).
  • the compound represented by formula (Dn1b3) is preferably a compound represented by formula (Dn1c32).
  • the compound of formula (DM0-1) is represented by formula (Da1).
  • the compound of formula (Da1) is more preferably represented by formula (Da2).
  • the compound represented by formula (Da1) is preferably a compound represented by formula (Da1a) below.
  • the compound represented by formula (Da1a) is preferably a compound represented by formula (Da1b).
  • the compound of formula (DM0-1) is represented by formula (Da1c11).
  • the compound represented by formula (Da1b) is preferably a compound represented by formula (Da1c12).
  • the above compound can be manufactured by any method within the range that does not impair its effects.
  • a production method including a step of introducing an iodine atom or an R 1 group into the compound containing the RG group is preferred.
  • the step of introducing an iodine atom into a compound having an aromatic ring can be carried out by reacting the compound having an aromatic ring with iodine I 2 under alkaline conditions. Through this reaction, compounds and dimers with different numbers of iodine can be produced. These production rates are adjusted depending on the reaction conditions. In particular, when the reaction temperature is lowered or the reaction time is shortened, compounds with a lower number of iodine tend to increase, and dimers tend to decrease.
  • the step of introducing an iodine atom into a compound having an alicyclic ring can be carried out by reacting the compound having an alicyclic ring with HI (hydrogen iodide).
  • a preferred method for producing the compound includes an iodination step of introducing an iodine atom as a substitution reaction into a raw material containing RG, a functional group capable of replacing an iodine atom by a substitution reaction, and optionally R1 . You can prepare.
  • another method for producing the compound can include an iodination step of introducing iodine radically or as a cation or anion into a raw material containing RG and, if necessary, R 1 .
  • iodination process As the iodination step, a method of introducing a halogen from an amino group by a Sandmeyer reaction, etc., a method of reacting iodine chloride in an organic solvent (for example, JP 2012-180326A, JP 2000-256231A, JP 2010-20101A) -159233, J. Chem. Soc. 636, 1943), a method in which iodine is dropped into an alkaline aqueous solution of phenol in the presence of ⁇ -cyclodextrin under alkaline conditions (JP-A-63-101342, JP-A-2003-64012). , etc. can be selected as appropriate.
  • a method of introducing a halogen from an amino group by a Sandmeyer reaction, etc. a method of reacting iodine chloride in an organic solvent (for example, JP 2012-180326A, JP 2000-256231A, JP 2010-20101A) -159233, J. Che
  • the iodinating agent examples include, but are not limited to, iodinating agents such as iodine chloride, iodine, and N-iodosuccinimide.
  • the ratio of the iodinating agent to the substrate is preferably at least 1.2 times by mole, more preferably at least 1.5 times by mole, and even more preferably at least 2.0 times by mole.
  • the iodination introduction reaction can proceed by reacting at least an iodinating agent with a substrate; for example, Adv. Synth. Catal. 2007, 349, 1159-1172, Organic Letters; Vol. 6; (2004); p. 2785-2788, non-patent documents such as "Organic synthesis reagents and synthesis methods for bromine and iodine compounds" (supervised by Hitomi Suzuki, authored by Manac Research Institute, Maruzen Publishing), US 5300506, US 5434154, US 2009/281114
  • the target compound can be obtained under known iodine introduction reaction conditions using methods described in patent documents such as No. 1, EP1439164, and WO2006/101318.
  • iodizing agents examples include iodine compounds, iodide monochloride, N-iodosuccinimide, benzyltrimethylammonium dichloroiodate, tetraethylammonium iodide, tetran-butylammonium iodide, lithium iodide, Sodium iodide, potassium iodide, 1-chloro-2-iodoethane, silver iodine fluoride, tert-butylhypoiodide, 1,3-diiodo-5,5-dimethylhydantoin, iodine-morpholine complex, tri- Fluoroacetyl hypoiodide, iodine-iodate, iodine-periodate, iodine-hydrogen peroxide, 1-iodoheptafluoropropane, triphenylphosphate-methyl
  • Additives include acids such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, p-toluenesulfonic acid, ferric chloride, aluminum chloride, copper chloride, antimony pentachloride, silver sulfate, silver nitrate, and silver trifluoroacetate, and water.
  • Bases such as sodium oxide, potassium hydroxide, lithium hydroxide, sodium carbonate, potassium carbonate, calcium carbonate, sodium bicarbonate, potassium bicarbonate, oxidizing agents such as ammonium cerium (IV) nitrate, sodium peroxodisulfate, sodium chloride
  • oxidizing agents such as ammonium cerium (IV) nitrate, sodium peroxodisulfate, sodium chloride
  • examples include inorganic compounds such as potassium chloride, mercury(II) oxide, and cerium oxide, organic compounds such as acetic anhydride, and porous substances such as zeolite.
  • the ratio of the additive to the iodinating agent is preferably 1.0 mol times, more preferably 1.2 mol times or more, even more preferably 1.5 mol times or more, and 2.0 mol times. A double amount or more is even more preferred.
  • iodine is preferably introduced into the core using at least an iodine source and an oxidizing agent. It is preferable to use an iodine source and an oxidizing agent from the viewpoint of improving reaction efficiency and purity.
  • the iodinating source include the above-mentioned iodinating agents.
  • oxidizing agents include iodic acid, periodic acid, hydrogen peroxide, and other additives (hydrochloric acid, sulfuric acid, nitric acid, p-toluenesulfonic acid, silver trifluoroacetate, cerium (IV) ammonium nitrate (CAN), etc.) ).
  • the iodination reaction can also be carried out using an iodocation species formed by combining an iodine source such as iodine with a silver salt or fuming sulfuric acid.
  • the iodination reaction can proceed by forming hypoiodic acid and iodocation species by combining an iodine source and an inorganic salt.
  • the inorganic salt potassium peroxodisulfate and the like can be used as appropriate.
  • a method of introducing iodine into an aliphatic alcohol group by a substitution reaction can also be used as appropriate.
  • iodinating agent hydrogen halide, phosphorus halide, sulfonyl halide (combination of NaI/acetone, thionyl halide, Vilsmeier reagent, Abbel reaction (combination of triphenylphosphine and iodine source) can be used as appropriate. .
  • reaction in the iodination step can be carried out neat without a solvent, but examples of reaction solvents that can be used include dichloromethane, dichloroethane, chloroform, halogenated solvents such as carbon tetrachloride, hexane, cyclohexane, and heptane.
  • alkyl solvents such as pentane and octane, aromatic hydrocarbon solvents such as benzene and toluene, alcohol solvents such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, and 2-butanol, diethyl ether, diisopropyl
  • alkyl solvents such as pentane and octane
  • aromatic hydrocarbon solvents such as benzene and toluene
  • alcohol solvents such as methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, and 2-butanol
  • diethyl ether diisopropyl
  • diisopropyl examples include ether solvents such as ether and tetrahydrofuran, acetic acid, dimethylformamide, dimethyl sulfoxide, and water.
  • the reaction temperature in the iodination step is not particularly limited, and may be any temperature from the freezing point to the boiling point of the solvent used in the reaction, but 0°C to 150°C is particularly preferred.
  • the reaction system may be refluxed for the purpose of iodination proceeding more efficiently.
  • a reflux tube equipped with a Dean-Stark or the like can be used to control the concentration of the iodinating agent in the reaction solution.
  • the iodine substitution reaction in the iodination step can proceed by reacting at least an iodinating agent with a substrate; for example, Chemistry-A European Journal, 24(55), 14622-14626; 2018, Synthesis (2007)
  • the desired compound can be obtained under known iodine substitution reaction conditions such as the Sandmeyer reaction using the method described in 1), 81-84, etc.
  • Protecting group introduction step Introducing the protecting group represented by A' in the preferred method for producing the above compound can be introduced into RG by a known method. For example, it can be appropriately selected from the methods described in Green's Protective Groups in Organic Synthesis (written by Peter GM Wuts, WILEY), pages 17 to 553.
  • R 1 when R 1 is a hydroxyalkyl group or an aldehyde group, it can be obtained, for example, by introducing a carboxyl group or an aldehyde group as R 1 and then reducing it.
  • known methods can be used, such as sodium borohydride, lithium aluminum hydride, sodium bis(2-methoxyethoxy)aluminum hydride (SBMEA), diisobutylaluminum hydride (DIBAL), etc.
  • a method using a metal hydride complex such as aluminum hydride, a method using a metal hydride such as aluminum hydride, a method using these reducing agents together with a reduction aid such as aluminum chloride or ethanedithiol, and other methods can be used.
  • the reducing ability of the reducing agent may be adjusted by modifying a part of its structure to an alkoxy group or hydrocarbon group, or by using it in combination with Lewis acids.
  • Known solvents such as methanol, ethanol, 2-propanol, DMF, and DMSO can be used as the solvent for the reduction reaction.
  • the reaction temperature can be carried out at room temperature or under heating conditions, the reaction may be carried out under cooling conditions in order to adjust the reactivity.
  • the compound in this embodiment is obtained as a crude product by the above reaction and then further purified to remove residual metal impurities.
  • Kinzo impurities may originate from reaction aids in the manufacturing process of the compound, reaction vessels for manufacturing, and other manufacturing equipment.
  • the residual amount of the above-mentioned metal impurities is preferably less than 1 ppm, more preferably less than 100 ppb, even more preferably less than 50 ppb, even more preferably less than 10 ppb, Most preferably less than 1 ppb.
  • metals classified as transition metals such as Fe, Ni, Sn, Zn, Cu, Sb, W, and Al
  • the residual amount of metal is 1 ppm or more, the material deteriorates over time due to interaction with other compounds. There is a concern that it may cause degeneration or deterioration of the material.
  • alkali metals and alkaline metals such as Na, K, Ca, Mg, etc.
  • the compound can be used to create resin for semiconductor processes.
  • the remaining amount of metal cannot be sufficiently reduced during the semiconductor manufacturing process, resulting in a decrease in yield due to defects and performance deterioration caused by the residual metal in the semiconductor manufacturing process, and the characteristics due to the doping effect of metal elements on the substrate. There is concern about the decline in
  • the purification method is not particularly limited, but the method described in International Publication 2015/080240, the method described in International Publication 2018/159707, etc. can be used.
  • the compound is dissolved in an organic solvent that is not miscible with water to obtain an organic phase, and the organic phase is brought into contact with an acidic aqueous solution to perform an extraction process.
  • the method includes a step of transferring the metal content contained in the organic phase containing the organic solvent to the aqueous phase, and then separating the organic phase and the aqueous phase.
  • Organic solvents that are optionally immiscible with water are organic solvents that are usually classified as water-insoluble solvents.
  • the organic solvent is not particularly limited, but organic solvents that can be safely applied to semiconductor manufacturing processes are preferred.
  • the amount of organic solvent used is usually 10% by mass based on the compound used.
  • organic solvent used examples include those described in International Publication 2015/080240.
  • toluene, 2-heptanone, cyclohexanone, cyclopentanone, methyl isobutyl ketone, propylene glycol monomethyl ether acetate (PGMEA), ethyl acetate and the like are preferred, with cyclohexanone and propylene glycol monomethyl ether acetate being particularly preferred.
  • the acidic aqueous solution is appropriately selected from aqueous solutions in which generally known organic and inorganic compounds are dissolved in water. For example, those described in International Publication No. 2015/080240 can be mentioned. These acidic aqueous solutions can be used alone or in combination of two or more.
  • acidic aqueous solutions include mineral acid aqueous solutions and organic acid aqueous solutions.
  • the mineral acid aqueous solution include an aqueous solution containing one or more selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid.
  • organic acid aqueous solutions include acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, fumaric acid, maleic acid, tartaric acid, citric acid, methanesulfonic acid, phenolsulfonic acid, p-toluenesulfonic acid, and trifluoroacetic acid.
  • examples include aqueous solutions containing one or more selected from the group consisting of: The pH range of the acidic aqueous solution is about 0 to 5, more preferably about 0 to 3.
  • Other methods of production include using a filter as described below, using an adsorbent ion exchange resin, passing the liquid through a column, dispersing and suspending the ion exchange resin in a container, etc. , distillation, etc. can be used as appropriate.
  • the filter purification process In the step of passing liquid through the filter, a commercially available filter for liquid filtration can be used as the filter used to remove metal components from the solution containing the compound and the solvent.
  • the nominal pore size of the filter is preferably 0.2 ⁇ m or less, more preferably less than 0.2 ⁇ m, even more preferably 0.1 ⁇ m or less, even more preferably 0. It is less than .1 ⁇ m, more preferably 0.05 ⁇ m or less.
  • the lower limit of the nominal pore diameter of the filter is not particularly limited, but is usually 0.005 ⁇ m.
  • the nominal pore size here is the nominal pore size that indicates the separation performance of the filter, and is determined by a test method determined by the filter manufacturer, such as a bubble point test, mercury porosimetry test, or standard particle supplement test. This is the pore diameter. When using commercially available products, the values are those listed in the manufacturer's catalog data.
  • the nominal pore size By setting the nominal pore size to 0.2 ⁇ m or less, it is possible to effectively reduce the metal content after the solution is passed through the filter once.
  • the step of passing through the filter may be performed two or more times.
  • hollow fiber membrane filters As the form of the filter, hollow fiber membrane filters, membrane filters, pleated membrane filters, and filters filled with filter media such as nonwoven fabric, cellulose, and diatomaceous earth can be used.
  • the filter it is preferable that the filter is one or more selected from the group consisting of hollow fiber membrane filters, membrane filters, and pleated membrane filters. Further, it is particularly preferable to use a hollow fiber membrane filter because of particularly high filtration accuracy and a high filtration area compared to other forms.
  • the materials of the filter include polyolefins such as polyethylene and polypropylene, polyethylene resins with functional groups having ion exchange ability through graft polymerization, polar group-containing resins such as polyamides, polyesters, and polyacrylonitrile, fluorinated polyethylene (PTFE), etc.
  • polar group-containing resins such as polyamides, polyesters, and polyacrylonitrile, fluorinated polyethylene (PTFE), etc.
  • PTFE fluorinated polyethylene
  • the following fluorine-containing resins can be mentioned.
  • the filter medium of the filter is one or more selected from the group consisting of polyamide, polyolefin resin, and fluororesin.
  • polyamide is particularly preferred from the viewpoint of reducing heavy metals such as chromium. Note that from the viewpoint of avoiding metal elution from the filter medium, it is preferable to use a filter made of a material other than sintered metal.
  • polyamide filters include, but are not limited to, the Polyfix Nylon series manufactured by Kitz Microfilter Co., Ltd., Ultipleat P-Nylon 66, Ultipore N66, and 3M manufactured by Nippon Pall Co., Ltd. Examples include Life Assure PSN series and Life Assure EF series manufactured by Co., Ltd. Examples of polyolefin filters include, but are not limited to, Ultipleat PE Clean, Ion Clean, manufactured by Nippon Pall Co., Ltd., Protego series, Microguard Plus HC10, Optimizer D, etc. manufactured by Nippon Entegris Co., Ltd. can be mentioned.
  • polyester filter examples include, but are not limited to, Gelaflow DFE manufactured by Central Filter Industries Co., Ltd., pleated type PMC manufactured by Nippon Filter Co., Ltd., and the like.
  • polyacrylonitrile filter examples include, but are not limited to, Ultrafilter AIP-0013D, ACP-0013D, and ACP-0053D manufactured by Advantech Toyo Co., Ltd., for example.
  • fluororesin filter include, but are not limited to, Enflon HTPFR manufactured by Nippon Pall Co., Ltd., Lifesure FA series manufactured by 3M Co., Ltd., and the like. These filters may be used alone or in combination of two or more types.
  • the filter may contain an ion exchanger such as a cation exchange resin, a cationic charge control agent that generates a zeta potential in the organic solvent solution to be filtered, and the like.
  • filters containing ion exchangers include, but are not limited to, the Protego series manufactured by Nippon Entegris Co., Ltd., and the Clangraft manufactured by Kurashiki Textile Processing Co., Ltd., and the like.
  • filters containing substances having a positive zeta potential such as polyamide polyamine epichlorohydrin cation resin include, but are not limited to, Zeta Plus 40QSH (registered trademark) manufactured by 3M Co., Ltd. and Zeta Plus 020GN (registered trademark). (registered trademark) or the LifeAsure EF (registered trademark) series.
  • ion exchange resin Other purification methods include a method in which a solution containing the compound is treated with an ion exchange resin.
  • an ion exchange resin any known ion exchange resin having a function corresponding to the target metal element can be used as appropriate.
  • Purification using an ion exchange resin is a step in which a product to be purified containing the compound is subjected to an ion exchange method or ion adsorption using a chelate group.
  • Components removed by the ion exchange resin treatment step include, but are not limited to, acid components and metal ions contained in metal components, for example.
  • the method for applying the ion exchange method is not particularly limited, and any known method can be used. Typically, there is a method in which a solution containing the compound is passed through a filling section filled with an ion exchange resin. In addition, an ion exchange resin is added to a solution containing the above compound in a processing container to perform dispersion and suspension treatment, and then the ion exchange resin is separated and removed by a method such as filtration, and a purification treatment is performed. A method for obtaining a solution can also be mentioned. In the treatment step using an ion exchange resin, the object to be purified may be treated with the same ion exchange resin multiple times, or the object to be purified may be treated with different ion exchange resins.
  • the ion exchange resin examples include cation exchange resins and anion exchange resins, and the content of the metal component can be adjusted so that the mass ratio of the content of the acid component to the content of the metal component is within the above range. It is preferable to use at least a cation exchange resin from the viewpoint of ease of use, and it is more preferable to use an anion exchange resin together with the cation exchange resin from the viewpoint of being able to control the content of the acid component.
  • the liquid may be passed through a filled part filled with a mixed resin containing both resins, or multiple filled parts filled with each resin may be passed through. You may let them.
  • the cation exchange resin any known cation exchange resin can be used, and gel-type cation exchange resins are particularly preferred.
  • Specific examples of the cation exchange resin include sulfonic acid type cation exchange resins and carboxylic acid type cation exchange resins.
  • cation exchange resin commercially available products can be used, such as Amberlite IR-124, Amberlite IR-120B, Amberlite IR-200CT, ORLITE DS-1, ORLITE DS-4 (all manufactured by Organo), Duolite C20J, Duolite C20LF, Duolite C255LFH, Duolite C-433LF (manufactured by Sumika Chemtex), DIAION SK-110, DIAION SK1B, and DIAION SK1BH (manufactured by Mitsubishi Chemical Corporation), Purolite S957, and Purolite S985 (manufactured by Purolite).
  • any known anion exchange resin can be used, and among them, it is preferable to use a gel type anion exchange resin.
  • acid components present as ions in the product to be purified include inorganic acids derived from catalysts used in the production of the product to be purified, and organic acids generated after reactions during the production of the product to be purified (e.g., reaction raw materials). , isomers, and by-products).
  • Such acid components are classified as hard acids to medium hard acids in terms of the HSAB (Hard and Soft Acids and Bases) rule. Therefore, in order to increase the removal efficiency when removing these acid components through interaction with the anion exchange resin, it is preferable to use an anion exchange resin containing a hard base to a medium hard base.
  • Anion exchange resins containing hard to medium hard bases include strong base type I anion exchange resins having trimethylammonium groups, and slightly weaker strong base type I anion exchange resins having dimethylethanolammonium groups. At least one anion exchange resin selected from the group consisting of type II anion exchange resins and weakly basic anion exchange resins such as dimethylamine and diethylenetriamine is preferred.
  • organic acids are hard acids, and among inorganic acids, sulfate ions are acids with medium hardness, so the strong base type or slightly weak strong base type anion exchange resin described above, If a weakly basic type anion exchange resin of medium fragility is used in combination, it becomes easy to reduce the content of the acid component to a suitable range.
  • anion exchange resin commercially available products can be used, such as Amberlite IRA-400J, Amberlite IRA-410J, Amberlite IRA-900J, Amberlite IRA67, ORLITE DS-2, ORLITE DS-5, ORLITE DS- 6 (manufactured by Organo), Duolite A113LF, Duolite A116, Duolite A-375LF (manufactured by Sumika Chemtex), and DIAION SA12A, DIAION SA10A, DIAION SA10AOH, DIAION SA20A, DIAION WA10 (manufactured by Mitsubishi Chemical Corporation), etc. can be mentioned.
  • anion exchange resins containing hard to medium hard bases include ORLITE DS-6, ORLITE DS-4 (manufactured by Organo), DIAION SA12A, DIAION SA10A, DIAION SA10AOH, DIAION SA20A, DIAION WA10 (manufactured by Mitsubishi Chemical), Purolite A400, Purolite A500, Purolite A850 (manufactured by Purolite), and the like.
  • Ion adsorption by a chelate group can be performed using, for example, a chelate resin having a chelate group.
  • Chelate resins do not release alternative ions when capturing ions, and because they do not use chemically highly active functional groups such as strong acidity or strong basicity, they can be subjected to purification such as hydrolysis and condensation reactions. It is possible to suppress side reactions to organic solvents. Therefore, purification can be performed with higher efficiency.
  • Chelate resins include amidoxime group, thiourea group, thiouronium group, iminodiacetic acid, amidophosphoric acid, phosphonic acid, aminophosphoric acid, aminocarboxylic acid, N-methylglucamine, alkylamino group, pyridine ring, cyclic cyanine, phthalocyanine ring. and resins having a chelating group or chelating ability, such as cyclic ethers.
  • chelate resin commercially available products can be used, such as Duolite ES371N, Duolite C467, Duolite C747UPS, Sumikylate MC760, Sumikylate MC230, Sumikylate MC300, Sumikylate MC850, Sumikylate MC640, and Sumikylate MC900 (all of which are manufactured by Sumika Chemtex).
  • Purolite S106, Purolite S910, Purolite S914, Purolite S920, Purolite S930, Purolite S950, Purolite S957, and Purolite S985 manufactured by Purolite.
  • the method for performing ion adsorption is not particularly limited, and any known method can be used.
  • a typical example is a method in which the product to be purified is passed through a filling section filled with a chelate resin.
  • the product to be purified may be passed through the same chelate resin multiple times, or the product may be passed through different chelate resins.
  • the filling section usually includes a container and the above-mentioned ion exchange resin filled in the container.
  • the container include a column, a cartridge, and a packed tower, but any container other than those exemplified above may be used as long as the product to be purified can pass therethrough after being filled with the ion exchange resin.
  • distillation process Other purification methods include distilling the compound itself.
  • the distillation method is not particularly limited, but known methods such as atmospheric distillation, reduced pressure distillation, molecular distillation, and steam distillation can be used.
  • [Preferred manufacturing method] (Compound where RG is a benzene ring)
  • a method for producing the compound of formula (Bz) will be specifically explained.
  • a compound represented by formula (MB) As a raw material.
  • the substituents, r1, r2, etc. in the compound are defined as described above.
  • R 1 , R, and OH are bonded at any bondable position.
  • r1 and r2 in formula (MB) are selected such that the sum of r1 to r4 satisfies the valence of the benzene ring when formula (Bz) is obtained.
  • Examples of the compound of formula (MB) include hydroxybenzaldehyde.
  • the compound of formula (Bz) can be produced by various methods, but from the viewpoint of availability of raw materials and yield, it is preferably produced by a method including the following steps. a preparatory step of preparing a compound of formula (MB); an iodination step of introducing iodine into the compound; a protecting group introduction step of introducing a protecting group into the compound; and a reduction step of reducing the compound.
  • Solvents that can be used in the iodination step include a wide variety of solvents including polar aprotic solvents and protic polar solvents.
  • a single protic polar solvent or a single polar aprotic solvent can be used.
  • mixtures of polar aprotic solvents, mixtures of protic polar solvents, mixtures of polar aprotic solvents and protic polar solvents, and mixtures of aprotic or protic solvents and nonpolar solvents may be used.
  • a polar protic solvent or a mixture thereof is preferred, and a mixture of a polar protic solvent and water is preferred from the viewpoint of suppressing side reactions. Solvents are useful but not required.
  • Suitable polar aprotic solvents include, but are not limited to, ether solvents such as diethyl ether, tetrahydrofuran, dimethoxyethane, diglyme, triglyme, ester solvents such as ethyl acetate, ⁇ -butyrolactone, nitrile solvents such as acetonitrile, Hydrocarbon solvents such as toluene and hexane, amide solvents such as N,N-dimethylformamide, 1-methyl-2-pyrrolidinone, N,N-dimethylacetamide, hexamethylphosphoramide, hexamethylphosphite triamide, dimethyl Examples include sulfoxide.
  • ether solvents such as diethyl ether, tetrahydrofuran, dimethoxyethane, diglyme, triglyme
  • ester solvents such as ethyl acetate, ⁇ -butyrolactone
  • Suitable protic polar solvents include, but are not limited to, water, alcoholic solvents such as methanol, ethanol, propanol, butanol, di(propylene glycol) methyl ether, di(ethylene glycol) methyl ether, 2-butoxyethanol, ethylene Glycol, 2-methoxyethanol, propylene glycol methyl ether, n-hexanol, and n-butanol.
  • the amount of solvent to be used can be set appropriately depending on the substrate, catalyst, reaction conditions, etc. used, and is not particularly limited, but in general, 0 to 10,000 parts by mass is suitable for 100 parts by mass of reaction raw materials, and the yield is From this viewpoint, it is preferably 100 to 2000 parts by mass.
  • the starting compounds, catalyst and solvent are added to the reactor to form a reaction mixture.
  • Any suitable reactor is used.
  • the reaction can be carried out by appropriately selecting a known method such as a batch method, a semi-batch method, or a continuous method.
  • the reaction temperature is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield. Generally, a temperature of 0°C to 200°C is suitable, and from a yield point of view, a temperature of 0°C to 100°C is preferred, a temperature of 0°C to 70°C is more preferred, and a temperature of 0°C to More preferably, the temperature is 50°C.
  • the preferred temperature range is 0°C to 100°C.
  • the reaction pressure is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield. Pressure can be regulated using an inert gas such as nitrogen and using a suction pump or the like. Conventional pressure reactors are used for reactions at high pressure, including but not limited to shake vessels, rocker vessels, and stirred autoclaves. In the reaction in this embodiment, the reaction pressure is preferably from reduced pressure to normal pressure, with reduced pressure being preferred.
  • the reaction time is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield.
  • reaction mixture is poured onto ice water and extracted into a solvent such as ethyl acetate or diethyl ether.
  • solvent such as ethyl acetate or diethyl ether.
  • the product is then recovered by removing the solvent using evaporation at reduced pressure.
  • the desired high-purity compound can be isolated by separation and purification methods well known in the art, such as filtration, concentration, distillation, extraction, crystallization, recrystallization, column chromatography, activated carbon, etc., or a combination of these methods. Can be purified.
  • solvents including polar aprotic solvents and protic polar solvents are used.
  • a single protic polar solvent or a single polar aprotic solvent can be used.
  • mixtures of polar aprotic solvents, mixtures of protic polar solvents, mixtures of polar aprotic solvents and protic polar solvents, and mixtures of aprotic or protic solvents and nonpolar solvents may be used.
  • Polar aprotic solvents or mixtures thereof are preferred.
  • Solvents are useful but not essential ingredients.
  • Suitable polar aprotic solvents include, but are not limited to, ether solvents such as diethyl ether, tetrahydrofuran, dimethoxyethane, diglyme, triglyme, ester solvents such as ethyl acetate, ⁇ -butyrolactone, nitrile solvents such as acetonitrile, Hydrocarbon solvents such as toluene and hexane, amide solvents such as N,N-dimethylformamide, 1-methyl-2-pyrrolidinone, N,N-dimethylacetamide, hexamethylphosphoramide, hexamethylphosphite triamide, dimethyl Examples include sulfoxide.
  • ether solvents such as diethyl ether, tetrahydrofuran, dimethoxyethane, diglyme, triglyme
  • ester solvents such as ethyl acetate, ⁇ -butyrolactone
  • Suitable protic polar solvents include, but are not limited to, water, alcoholic solvents such as methanol, ethanol, propanol, butanol, di(propylene glycol) methyl ether, di(ethylene glycol) methyl ether, 2-butoxyethanol, ethylene Glycol, 2-methoxyethanol, propylene glycol methyl ether, n-hexanol, and n-butanol.
  • alcoholic solvents such as methanol, ethanol, propanol, butanol, di(propylene glycol) methyl ether, di(ethylene glycol) methyl ether, 2-butoxyethanol, ethylene Glycol, 2-methoxyethanol, propylene glycol methyl ether, n-hexanol, and n-butanol.
  • the amount of solvent to be used can be set appropriately depending on the substrate, catalyst, reaction conditions, etc.
  • protection introduction reagent a wide variety of protection introduction reagents that function under the reaction conditions of this embodiment are used.
  • suitable protection introduction reagents include, but are not limited to, acid halides, acid anhydrides, active carboxylic acid derivative compounds such as dicarbonates, alkyl halides, vinyl alkyl ethers, dihydropyran, halocarboxylic acid alkyl esters, and the like. Can be mentioned.
  • Acid or base catalysts are preferred.
  • suitable acid catalysts include, but are not limited to, inorganic acids such as hydrochloric acid, sulfuric acid, phosphoric acid, hydrobromic acid, hydrofluoric acid, oxalic acid, malonic acid, succinic acid, adipic acid, sebacic acid, Organic acids such as citric acid, fumaric acid, maleic acid, formic acid, p-toluenesulfonic acid, methanesulfonic acid, trifluoroacetic acid, dichloroacetic acid, trichloroacetic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, naphthalenesulfonic acid, naphthalene disulfonic acid, etc.
  • Examples include acids, Lewis acids such as zinc chloride, aluminum chloride, iron chloride, and boron trifluoride, and solid acids such as tungstosilicic acid, phosphotungstic acid, silicomolybdic acid, and phosphomolybdic acid.
  • These acid catalysts may be used alone or in combination of two or more.
  • organic acids and solid acids are preferred, and from the viewpoint of production such as ease of availability and handling, it is preferable to use hydrochloric acid or sulfuric acid.
  • suitable basic catalysts include, but are not limited to, amine-containing catalysts such as pyridine and ethylenediamine, non-amine basic catalysts such as metal salts and particularly potassium or acetate salts, which are preferred and suitable.
  • Catalysts include, but are not limited to, potassium acetate, potassium carbonate, potassium hydroxide, sodium acetate, sodium carbonate, sodium hydroxide, and magnesium oxide. All of the non-amine base catalysts of this embodiment are commercially available, for example, from EM Science (Gibbstown) or Aldrich (Milwaukee).
  • the amount of the catalyst to be used can be set as appropriate depending on the substrate, catalyst, reaction conditions, etc. to be used, and is not particularly limited, but in general, 1 to 5000 parts by mass is suitable for 100 parts by mass of reaction raw materials, and the yield is From this viewpoint, it is preferably 50 to 3000 parts by mass.
  • the protecting compound, catalyst, and solvent are added to the reactor to form a reaction mixture.
  • Any suitable reactor is used.
  • the reaction can be carried out by appropriately selecting a known method such as a batch method, a semi-batch method, or a continuous method.
  • the preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield. In general, temperatures from 0°C to 200°C are suitable; from a yield point of view, temperatures from 10°C to 190°C are preferred, temperatures from 25°C to 150°C are more preferred, and temperatures from 50°C to More preferably, the temperature is 100°C.
  • the preferred temperature range is 0°C to 100°C.
  • the reaction pressure is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield. Pressure can be regulated using an inert gas such as nitrogen and using a suction pump or the like. Conventional pressure reactors are used for reactions at high pressure, including but not limited to shake vessels, rocker vessels, and stirred autoclaves. In the reaction in this embodiment, the reaction pressure is preferably from reduced pressure to normal pressure, with reduced pressure being preferred.
  • the reaction time is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of catalyst and the desired yield. However, most reactions are carried out in less than 6 hours, with reaction times ranging from 15 minutes to 600 minutes being common.
  • the preferred reaction time range is 15 minutes to 600 minutes.
  • Isolation and purification can be carried out after completion of the reaction using suitable methods known in the art. For example, the reaction mixture is poured onto ice water and extracted into a solvent such as ethyl acetate or diethyl ether. The product is then recovered by removing the solvent using evaporation at reduced pressure.
  • the desired high-purity monomer can be isolated by separation and purification methods well known in the art, such as filtration, concentration, distillation, extraction, crystallization, recrystallization, column chromatography, activated carbon, etc., or a combination of these methods. Can be purified.
  • a wide variety of solvents can be used in the reduction step, including polar aprotic solvents and protic polar solvents.
  • a single protic polar solvent or a single polar aprotic solvent can be used.
  • mixtures of polar aprotic solvents, mixtures of protic polar solvents, mixtures of polar aprotic solvents and protic polar solvents, and mixtures of aprotic or protic solvents and nonpolar solvents may be used.
  • a polar aprotic solvent or a mixture thereof is preferable, and from the viewpoint of suppressing side reactions, a mixture of a polar aprotic solvent and a polar protic solvent is preferable.
  • polar protic solvent water, methanol, ethanol, propanol can be used. , alcoholic solvents such as butanol are more preferred. Solvents are useful but not essential ingredients.
  • Suitable polar aprotic solvents include, but are not limited to, ether solvents such as diethyl ether, tetrahydrofuran, dimethoxyethane, diglyme, triglyme, ester solvents such as ethyl acetate, ⁇ -butyrolactone, nitrile solvents such as acetonitrile, Hydrocarbon solvents such as toluene and hexane, amide solvents such as N,N-dimethylformamide, 1-methyl-2-pyrrolidinone, N,N-dimethylacetamide, hexamethylphosphoramide, hexamethylphosphite triamide, dimethyl Examples include sulfoxide.
  • Suitable protic polar solvents include, but are not limited to, water, alcoholic solvents such as methanol, ethanol, propanol, butanol, di(propylene glycol) methyl ether, di(ethylene glycol) methyl ether, 2-butoxyethanol, ethylene Glycol, 2-methoxyethanol, propylene glycol methyl ether, n-hexanol, and n-butanol.
  • the amount of the solvent to be used can be set appropriately depending on the substrate, reducing agent, reaction conditions, etc. used, and is not particularly limited, but in general, 0 to 10,000 parts by mass is suitable for 100 parts by mass of the reaction raw material, and the yield is From the viewpoint of ratio, it is preferably 100 to 2000 parts by mass.
  • Suitable reducing agents include, but are not limited to, metal hydrides, metal hydride complexes, and the like, such as borane dimethyl sulfide, diisobutylaluminum hydride, sodium borohydride, lithium borohydride, potassium borohydride, Zinc borohydride, lithium tri-s-butylborohydride, potassium tri-s-butylborohydride, lithium triethylborohydride, lithium aluminum hydride, lithium tri-t-butoxyaluminum hydride, bis( methoxyethoxy)aluminum sodium, etc.
  • metal hydrides such as borane dimethyl sulfide, diisobutylaluminum hydride, sodium borohydride, lithium borohydride, potassium borohydride, Zinc borohydride, lithium tri-s-butylborohydride, potassium tri-s-butylborohydride, lithium triethylborohydride, lithium aluminum hydride, lithium tri-t
  • the amount of the reducing agent to be used can be appropriately set depending on the substrate, reducing agent, reaction conditions, etc. used, and is not particularly limited, but in general, 1 to 500 parts by mass is suitable for 100 parts by mass of the reaction raw material, From the viewpoint of yield, it is preferably 10 to 200 parts by mass.
  • quenching agent a wide variety of quenching agents that function under the reaction conditions of this embodiment are used.
  • a quenching agent has the function of deactivating a reducing agent.
  • Quenching agents are effective but not essential ingredients. Suitable quenching agents include, but are not limited to, ethanol, aqueous ammonium chloride, water, hydrochloric acid, sulfuric acid, and the like.
  • the amount of the quenching agent to be used can be set as appropriate depending on the amount of the reducing agent to be used, and is not particularly limited, but in general, 1 to 500 parts by mass is suitable for 100 parts by mass of the reducing agent, and from the viewpoint of yield. The amount is preferably 50 to 200 parts by mass.
  • the compound to be reduced, the reducing agent, and the solvent are added to the reactor to form a reaction mixture.
  • Any suitable reactor is used.
  • the reaction can be carried out by appropriately selecting a known method such as a batch method, a semi-batch method, or a continuous method.
  • the reaction temperature is not particularly limited. The preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of reducing agent and the desired yield. Generally, a temperature of 0°C to 200°C is suitable, and from a yield point of view, a temperature of 0°C to 100°C is preferred, a temperature of 0°C to 70°C is more preferred, and a temperature of 0°C to More preferably, the temperature is 50°C.
  • the preferred temperature range is 0°C to 100°C.
  • the reaction pressure can be regulated using an inert gas such as nitrogen and using a suction pump or the like.
  • Conventional pressure reactors are used for reactions at high pressure, including but not limited to shake vessels, rocker vessels, and stirred autoclaves.
  • the reaction pressure is preferably from reduced pressure to normal pressure, with reduced pressure being preferred.
  • the preferred range depends on the concentration of the substrate, the stability of the product formed, the choice of reducing agent and the desired yield.
  • reaction mixture is poured onto ice water and extracted into a solvent such as ethyl acetate or diethyl ether.
  • solvent such as ethyl acetate or diethyl ether.
  • the product is then recovered by removing the solvent using evaporation at reduced pressure.
  • the desired high-purity compound can be isolated by separation and purification methods well known in the art, such as filtration, concentration, distillation, extraction, crystallization, recrystallization, column chromatography, activated carbon, etc., or a combination of these methods. Can be purified.
  • Specific examples of the compound of formula (MN) are not limited, but include (di)hydroxynaphthaldehyde, aminosinaphthaldehyde, nitronaphthaldehyde, chlorinated naphthaldehyde, and the like.
  • the compound of formula (N) can be produced by various methods, but from the viewpoint of availability of raw materials and yield, it is preferably produced by a method comprising the following steps. From the viewpoint of availability of raw materials and yield, it is preferable to manufacture by a method comprising the following steps. a preparatory step of preparing a compound of formula (MN); an iodination step of introducing iodine into the compound; a protecting group introduction step of introducing a protecting group into the compound; and a reduction step of reducing the compound.
  • the preparation step, the iodination step, the protecting group introduction step, and the reduction step are carried out in this order, or the preparation step, the protecting group introduction step, the iodination step, and the reduction step are carried out in this order. It is preferable.
  • the solvent and reaction conditions that can be used in each step can be as explained in the method for producing a compound in which RG is a benzene ring.
  • the compound of formula (Ad) can be produced by various methods, but from the viewpoint of availability of raw materials and yield, it is preferably produced by a method comprising the following steps.
  • the solvent that can be used in the iodination step those listed in the method for producing a compound in which RG is a benzene ring can be used.
  • a raw material compound, a catalyst, and a solvent are added to a reactor to form a reaction mixture.
  • the reaction conditions and the like can also be as explained in the method for producing a compound in which RG is a benzene ring.
  • the iodination step includes concentrating the reaction solution by distilling off water in a reaction to obtain alkyl iodide using an aqueous hydrogen iodide solution and adamantane alcohol as raw materials.
  • the hydrogen iodide concentration of the reaction solution is preferably 10% or more, more preferably 25% or more, even more preferably 40% or more, particularly preferably 45% or more, and 50% or more. Most preferably.
  • the hydrogen iodide concentration of the aqueous phase containing hydrogen iodide is the above concentration.
  • Adamantane alcohol may have only one hydroxy group or two or more hydroxy groups in the molecule.
  • the hydroxy group to be iodinated may be primary, secondary, or tertiary, but is preferably secondary or tertiary, and more preferably tertiary.
  • Adamantane alcohol is preferably represented by the following formula (MA-1).
  • R 1 and R" are defined the same as in formula (Ad).
  • R 1 is -OH, -NO 2 , or a group having 1 to 12 carbon atoms that may contain at least one functional group.
  • the functional group is preferably one or more groups selected from the group consisting of a hydroxyl group, an ether group, an ester group, a carboxyl group, a halogen atom, -NO2 , and NLL'.
  • the L and L' are each independently a hydrogen atom, a hydroxyl group, or a monovalent group having 1 to 12 carbon atoms that may contain at least one functional group.
  • the amount of hydrogen iodide is preferably 1.01 equivalents or more, more preferably 1.1 equivalents or more, and 1.3 equivalents or more in terms of substance amount relative to the hydroxyl group to be iodized. It is more preferable that the amount is 1.5 equivalents or more, and particularly preferably 1.5 equivalents or more.
  • Hydrophobic solvent refers to a solvent that is immiscible with water in any proportion. In a reaction system in which an aqueous hydrogen halide solution and a hydrophobic solvent are separated into two liquid-liquid phases: an aqueous phase and a hydrophobic solvent phase, iodination of hydroxyl groups proceeds in the aqueous phase.
  • the hydrophobic solvent may or may not be azeotropic with water, but a hydrophobic solvent that is azeotropic with water is preferred.
  • hydrophobic solvents that are azeotropic with water include dichloromethane, chloroform, carbon tetrachloride, nitromethane, 1,2-dichloroethane, ethyl acetate, butyl acetate, methyl ethyl ketone, methyl isobutyl ketone, pentane, cyclohexane, hexane, and benzene.
  • hydrophobic solvent may be used alone, or two or more types of hydrophobic solvents may be used in combination.
  • the hydrophobic solvent is preferably 50 equivalents or less, more preferably 30 equivalents or less, and even more preferably 20 equivalents or less by mass relative to the raw material alcohol.
  • An acid may be used in combination during the reaction.
  • Examples of the type of acid include sulfuric acid, nitric acid, phosphoric acid, p-toluenesulfonic acid, methanesulfonic acid, benzenesulfonic acid, acetic acid, trifluoroacetic acid, citric acid, oxalic acid, malic acid, lactic acid, glycolic acid, and succinic acid.
  • Examples include acids, chromic acid, and boric acid.
  • a metal iodide it is also possible to use a metal iodide together during the reaction.
  • a metal iodide for example, a combination of LiI, NaI, KI, MgI 2 , CaI 2 , AlI 3 and the like is effective.
  • stirring blades can be suitably used, for example, flat paddle blades, inclined paddle blades, turbine blades, disk turbine blades, propeller blades, triple swept blades, anchor blades, helical ribbon blades, and screw blades. Examples include Tsubasa, Anchor Tsubasa, Max Blend, Full Zone, and Twin Star.
  • the stirring speed can be any speed.
  • the stirring speed may be set so that the interface is shaken, or the stirring speed may be set so that some oil droplets or water droplets are generated and dispersed. , the stirring speed may be set to achieve a completely dispersed state.
  • the reaction temperature is preferably 0 to 150°C, more preferably 20 to 150°C, and even more preferably 50 to 120°C.
  • the reaction temperature needs to be the boiling point of the reaction solution. If the boiling point changes due to the use of a hydrophobic solvent, the reaction temperature can be controlled by reducing or increasing the pressure of the reaction.
  • the reaction temperature can also be controlled by changing the stirring speed.
  • the stirring speed can be controlled by the stirring speed.
  • the entire amount of water distilled out by simple distillation may be distilled off, or the necessary amount may be distilled off using a Dean-Stark apparatus, but it is not recommended to use a Dean-Stark apparatus. It is preferable to distill off the required amount.
  • the amount of water to be distilled off is preferably determined so that the hydrogen iodide concentration can be maintained at a predetermined concentration or higher.
  • the above concentration is preferably at least 15% lower than the charged hydrogen iodide concentration, more preferably at least 10% lower than the charged hydrogen halide concentration, and 5% lower than the charged hydrogen iodide concentration. It is more preferable that the concentration is at least a low concentration, and it is particularly preferable that the concentration is at least the charged hydrogen iodide concentration.
  • water may be distilled off continuously in a fixed amount, or may be distilled off all at once at predetermined time intervals. After the reaction is completed, operations for purifying and isolating the alkyl iodide are carried out.
  • simple iodine is produced by oxidation of hydrogen iodide. If elemental iodine remains, it may cause discoloration, so it is preferable to reduce it to hydrogen iodide using a reducing agent.
  • the type of reducing agent is not particularly limited, and examples include sodium sulfite, sodium hydrogen sulfite, and phosphinic acid.
  • the reducing agent may be added directly to the reaction solution, or may be added as an aqueous solution. Further, the reducing agent may be added with hydrogen iodide remaining in the reaction solution, or may be added after neutralizing hydrogen iodide with a base.
  • the base used in the neutralization operation is not particularly limited, and examples thereof include sodium hydroxide, potassium hydroxide, calcium hydroxide, sodium carbonate, and sodium hydrogen carbonate.
  • a hydrophobic solvent When a hydrophobic solvent is used, purification can be achieved by washing the hydrophobic solvent phase with water.
  • water for example, pure water, an aqueous sodium chloride solution, an aqueous nitric acid solution, an aqueous oxalic acid solution, an aqueous sulfuric acid solution, an aqueous hydrogen chloride solution, etc. can be suitably used.
  • a hydrophobic solvent and wash with water after the reaction is completed The hydrophobic solvent added after the reaction is completed may be the same as or different from the hydrophobic solvent used in the reaction.
  • washing with water is carried out at around room temperature, but if the product precipitates during washing with water at room temperature, it is possible to carry out washing with water while heating.
  • the temperature of water washing is preferably below the azeotropic temperature of the hydrophobic solvent and water.
  • Ion exchange resins, chelate resins, metal removal filters, and particulate removal filters may be applied alone during purification, or may be applied in combination with operations such as washing with water.
  • the compound of formula (Ad) can be isolated by distillation or crystallization.
  • the method of distillation is not particularly limited, but methods such as simple batch distillation, equilibrium flash distillation, batch rectification, and continuous rectification can be suitably applied.
  • the compound of formula (Ad) may be recovered by distillation, or may be recovered as bottom liquid or bottom liquid.
  • the hydrophobic solvent used in the reaction may be used as it is, or a new solvent may be added. Further, the solvent may be a single solvent, or two or more types of solvents may be used in combination.
  • the solvent during crystallization is preferably 20 equivalents or less, more preferably 10 equivalents or less, and even more preferably 5 equivalents or less in terms of mass ratio to the compound of formula (Ad). Preferably, it is particularly preferably 3 equivalents or less. It is also possible to adjust the ratio of the solvent to the compound of formula (Ad) by removing the solvent by distillation.
  • Crystals may be precipitated by adding seed crystals, or crystals may be precipitated by cooling the solution without adding seed crystals. Furthermore, after crystal precipitation, the slurry is cooled to improve yield.
  • the cooling rate is preferably 30°C/h or less, more preferably 20°C/h or less, even more preferably 10°C/h or less, and particularly preferably 5°C/h or less.
  • the temperature at which the slurry is solid-liquid separated after cooling is preferably -50 to 40°C, more preferably -20 to 30°C, and even more preferably -20 to 10°C. Further, the holding time from when the slurry temperature reaches the solid-liquid separation temperature to when the solid-liquid separation occurs is not particularly limited, but is preferably within 24 hours, and more preferably within 10 hours.
  • the solid-liquid separation method is not particularly limited, but for example, methods such as Nutsche filtration, centrifugation, and pressure filtration can be suitably applied.
  • a base or an oxidizing agent can be used when iodinating the compound (MA).
  • compound (Da2) can be synthesized.
  • the base include sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium carbonate, potassium carbonate, calcium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate, and the like.
  • the oxidizing agent include, but are not particularly limited to, periodic acid, hydrogen peroxide, and certain additives (hydrochloric acid, sulfuric acid, nitric acid, p-toluenesulfonic acid, etc.).
  • compound (Da2) can also be synthesized by condensing the hydroxyl groups of compound (MA) using a strong acid or the like.
  • compositions are useful as compositions. Since the above compound is particularly useful as a composition for lithography, a composition containing the compound will be described below using a composition for lithography as an example.
  • the compound exhibits a sensitizing effect on the lithography composition containing it upon radiation irradiation. Although the reason for this is not limited, it is believed that the compound promotes absorption of radiation. This effect is particularly noticeable in extreme ultraviolet (EUV) irradiation.
  • EUV extreme ultraviolet
  • the content of the sensitization effect has a plurality of forms, and when a photosensitive layer formed using a composition for lithography is used as a resist film for lithography, it can be confirmed, for example, as follows. 1) Using a surface exposure method without a pattern, after exposure, there is a PEB process (heat treatment after exposure), and a development process (dissolving and removing exposed or unexposed areas with a developer). The film thickness of the film obtained through step) is measured.
  • the defects are caused by fluctuations in the optical exposure amount or exposure conditions where the exposure amount is low and is substantially similar to defects, but when the resist film has a sensitizing effect, the fluctuations and defects are avoided by promoting absorption, The defects are reduced.
  • the compound when used in a lithographic composition, it can be used directly as a constituent of the composition.
  • a resin containing the above compound as a partial structure base material (A)
  • additives as a partial structure
  • C acid generator
  • G crosslinking agent
  • E acid diffusion inhibitor
  • It can also be processed into a form such as (F) and used as a lithography composition containing these resins and additives as constituent components.
  • the lithography composition according to the present embodiment includes a compound represented by formula (1) (hereinafter also referred to as "compound (B)"), and optionally includes a base material (A), a solvent (S), It may also contain other components such as an acid generator (C), a crosslinking agent (G), and an acid diffusion control agent (E). Each component will be explained below.
  • composition in this embodiment contains one or more compounds (B). Although not limited, it is preferable that the composition contains two or more types of compounds (B). When two or more types of compounds (B) are included, etching defects shown in Examples below tend to be reduced. Although the reason for the decrease in etching defects is not clear, it is considered that, for example, the compatibility of compound (B) in the composition is improved, and the number of fine defects during film formation is reduced.
  • the amount of compound (B) blended is not limited, but if a small amount of compound (B) is present (this compound is referred to as compound (B')), from the viewpoint of the etching defect improvement effect, compound (B')
  • the amount is preferably 1 ppm or more, more preferably 10 ppm or more based on the total amount of compound (B).
  • compound (B'') when there is a compound (B) that is incorporated in the largest amount (this compound is referred to as compound (B'')), a compound (B'') that has a lower content of iodine atoms in its molecule than the compound (B'').
  • the content of ') is preferably 40% by mass or less in the total compound (B), more preferably 10% by mass or less, and most preferably 5% by mass or less. preferable.
  • the method of mixing two or more types of compounds (B) is not limited, but two or more types of compounds (B) may be mixed, or they may be synthesized simultaneously as a mixture in the process of synthesizing compound (B). Good too.
  • More preferred embodiments of compound B include the following. 1) A compound of formula (1) as a standard and a compound represented by formula (1) but having fewer iodine atoms than the compound as a standard (preferably a compound of formula (BP0-1) described below) combination with. 2) A combination of the reference compound of formula (1) and a multimer of the compound represented by formula (1) (preferably the above-mentioned formula (DM0-1)). 3) A combination of the compound of formula (1) as a reference, the compound with a small number of iodine atoms, and the multimer.
  • the composition By containing the compound of formula (DM0-1), the composition is assumed to be particularly effective in ensuring stability over time due to inorganic substances and inorganic components, and the composition has a high trapping effect for factor components, resulting in stability over time. It is assumed that this will lead to improved stability.
  • the composition includes a compound represented by formula (BP0-1), whereby the mechanism resulting from the difference in redox potential with the compound represented by formula (1) is assumed to be effective in ensuring stability over time, and is assumed to lead to improvement in stability over time due to natural oxidation and deterioration of coexisting substances over time.
  • the compound of formula (DM0-1) is as described above.
  • Examples of compounds with a small number of iodine atoms include compounds represented by formula (BP0-1).
  • RG, I, and R 1 are defined the same as in formula (1).
  • n' is an integer from 1 to 5 and less than or equal to n.
  • m' is an integer from 1 to 5 and less than or equal to m.
  • the compound of formula (BP0-1) is a type of compound represented by formula (1).
  • the compound of formula (BP0-1) is preferably represented by the following formula.
  • R, R 1 , R'', A, r1 to r4, s2 to s3, and t2 to t3 are defined as described above.
  • a1 and r4a are integers from 0 to 4, and a1 and r4a are a1+r4a It is a number that satisfies ⁇ r4.
  • r4 is defined as described above, but preferably has the same meaning as r4 in formula (Bz).
  • s1b is an integer from 0 to 6, and satisfies s1b ⁇ (s1-1) It is an integer.
  • s1 is defined as described above, but preferably has the same meaning as s1 in formula (N).
  • t1b is an integer from 0 to 9, and is an integer satisfying t1b ⁇ (t1-1).
  • t1 is defined as described above, but preferably has the same meaning as t1 in formula (Ad).
  • a composition that uses the compound of formula (1) and formula (DM0-1) or formula (BP0-1) in combination has excellent storage stability. Although the cause of this is not limited, it is presumed that the compound of formula (DM0-1) or formula (BP0-1) sterically or electronically captures a substance or a component that causes deterioration of storage stability.
  • the lower limit of the total amount of the compounds represented by formula (DM0-1) and formula (BP0-1) with respect to the entire compound represented by formula (1) is preferably 1 ppm or more, more preferably is 2 ppm or more, more preferably 5 ppm or more, particularly preferably 10 ppm or more.
  • the upper limit of the total amount is preferably 10,000 ppm or less, more preferably 8,000 ppm or less, more preferably 5,000 ppm or less, particularly preferably 3,000 ppm or less.
  • a compound of formula (DM0-1) it is preferable to use a compound of formula (DM1a), (Dn1), or (Da1) is more preferable.
  • dimers are particularly preferred.
  • a compound of formula (BP0-1) and a compound of formula (BP1a), (BP2a), (Bn1), or (Ba1) It is preferable to use a compound with a small number of iodine atoms, such as. Even when the compounds of formulas (BP1a), (BP2a), (Bn1), and (Ba1) do not contain an iodine atom, the desired effects can be achieved.
  • Z in formula (BP1a) may not include I. Preferred compounds will be explained below.
  • the compound represented by formula (BP1a) is preferably a compound represented by formula (BP1b).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • r4 is defined as described above, but preferably has the same meaning as r4 in formula (Bz) (the same applies hereinafter).
  • the compound represented by formula (BP1b) is preferably a compound represented by formula (BP1c1).
  • BP1c1 I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c1) is preferably a compound represented by formula (BP1d11).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c1) is preferably a compound represented by formula (BP1d12).
  • I, R, R 1 and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 satisfying a11+a12 ⁇ r4.
  • A' is a group having a protecting group, and is -O-R a -O-R b , -O-CO-O-R b , or -O-Ra-CO-O-R b , or -O -Ra-O-CO-R b .
  • R a is a linear or branched alkyl group having 1 to 3 carbon atoms.
  • R b is a monovalent linear or branched alkyl group having 1 to 3 carbon atoms, or a cyclic alkyl group, or a divalent cyclic alkyl group, which forms a ring with adjacent oxygen atoms. ing. A cyclic structure containing R a and R a may be formed. However, there are one or more A's.
  • the compound represented by formula (BP1b) is preferably a compound represented by formula (BP1c2).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c2) is preferably a compound represented by formula (BP1d21).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c1) is preferably a compound represented by formula (BP1d22).
  • I, R, R 1 , and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • A' is defined the same as equation (BP1d12).
  • the compound represented by formula (BP1b) is preferably a compound represented by formula (BP1c3) below.
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c3) is preferably a compound represented by formula (BP1d31).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1b) is preferably a compound represented by formula (BP1c4).
  • I, R, R 1 , A, and Z are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 that satisfy a11+a12 ⁇ r4.
  • the compound represented by formula (BP1c4) is preferably a compound represented by formula (BP1d41) below.
  • I, R, R 1 and A are defined the same as in formula (BP1a), and a11 and a12 are integers from 0 to 5 satisfying a11+a12 ⁇ r4.
  • A' is defined the same as equation (BP1d12).
  • the compound represented by formula (Bn1) is preferably a compound represented by formula (Bn1a).
  • the compound represented by formula (Bn1a) is preferably a compound represented by formula (Bn1b1).
  • the compound represented by formula (Bn1b1) is preferably a compound represented by formula (Bn1c11) below.
  • the compound represented by formula (Bn1b1) is preferably a compound represented by formula (Bn1c12).
  • the compound represented by formula (Bn1a) is preferably a compound represented by formula (Bn1b2).
  • the compound represented by formula (Bn1b2) is preferably a compound represented by formula (Bn1c21).
  • the compound represented by formula (Bn1a) is preferably a compound represented by formula (Bn1b3).
  • the compound represented by formula (Bn1b3) is preferably a compound represented by formula (Bn1c31).
  • the compound represented by formula (Bn1b3) is preferably a compound represented by formula (Bn1c32) below.
  • the compound represented by formula (Ba1) is preferably a compound represented by formula (Ba1a).
  • I, R, R 1 , A, Z, and Rd are defined the same as in formula (Ba1).
  • 1c1, 1c2, and 1c3 are integers of 0 or 1 that satisfy (1c1+1c2+1c3) ⁇ t1b.
  • t1b is defined as described above, but preferably has the same meaning as t1b in formula (Ba1) (the same applies hereinafter).
  • the compound represented by formula (Ba1a) is preferably a compound represented by formula (Ba1b).
  • I, R, R 1 , A, and Z are defined the same as in formula (Ba1a).
  • 1c1, 1c2, and 1c3 are integers of 0 or 1 that satisfy (1c1+1c2+1c3) ⁇ t1b.
  • the compound represented by formula (Ba1b) is preferably a compound represented by formula (Ba1c11) below.
  • I, R'', and R 1 are defined the same as in formula (Ba1a).
  • 1d1 and 1d2 are integers of 0 or 1 that satisfy (1d1+1d2) ⁇ t1b.
  • the compound represented by formula (Ba1b) is preferably a compound represented by formula (Ba1c12) below.
  • the base material (A) refers to a material that is a compound other than the compound (B) and can be used as a resist.
  • the base material (A) may be a resin.
  • the base material (A) can be used as a resist for g-line, i-line, KrF excimer laser (248 nm), ArF excimer laser (193 nm), extreme ultraviolet (EUV) lithography (13.5 nm), or electron beam (EB).
  • a base material that can be used for example, a lithography base material or a resist base material).
  • Examples of the base material (A) include phenol novolak resin, cresol novolak resin, hydroxystyrene resin, (meth)acrylic resin, hydroxystyrene-(meth)acrylic copolymer, cycloolefin-maleic anhydride copolymer, Examples include cycloolefins, vinyl ether-maleic anhydride copolymers, inorganic resist materials containing metal elements such as titanium, tin, hafnium, and zirconium, and derivatives thereof.
  • phenol novolak resin cresol novolac resin
  • hydroxystyrene resin (meth)acrylic resin
  • hydroxystyrene-(meth)acrylic copolymer titanium, tin, hafnium, zirconium, etc.
  • inorganic resist materials having metal elements, as well as derivatives thereof.
  • the weight average molecular weight of the base material (A) is preferably 2,000 to 49,900, more preferably 2,000 to 29,900, and 2,000 to 14,900 from the viewpoint of reducing defects in a film formed using the composition and obtaining a good pattern shape. More preferred.
  • a value obtained by measuring the weight average molecular weight in terms of polystyrene using GPC can be used.
  • the solvent in this embodiment may be any solvent that can dissolve compound (B), and any known solvent may be used as appropriate.
  • solvents include ethylene glycol monoalkyl ether acetates; ethylene glycol monoalkyl ethers; propylene glycol monoalkyl ether acetates (e.g. propylene glycol monomethyl ether acetate); propylene glycol monoalkyl ethers; lactic acid esters; fats. Other esters; aromatic hydrocarbons; ketones; amides 3:9; lactones; and the like. Specific examples of these include those disclosed in Patent Document 1.
  • the solvent used in this embodiment is preferably a safe solvent, more preferably PGMEA (propylene glycol monomethyl ether acetate), PGME (propylene glycol monomethyl ether), CHN (cyclohexanone), CPN (cyclopentanone). , 2-heptanone, anisole, butyl acetate, and ethyl lactate, and more preferably at least one selected from PGMEA, PGME, CHN, CPN, and ethyl lactate.
  • PGMEA propylene glycol monomethyl ether acetate
  • PGME propylene glycol monomethyl ether
  • CHN cyclohexanone
  • CPN cyclopentanone
  • the amount of the solid component and the amount of the solvent are not particularly limited, but are 1 to 80% by mass of the solid component and 20 to 99% by mass of the solvent, based on the total mass of the amount of the solid component and the solvent. It is preferably 1 to 50% by mass of solid components and 50 to 99% by mass of solvent, still more preferably 2 to 40% by mass of solids and 60 to 98% by mass of solvent, particularly preferably 2 to 10% by mass of solid components. % by mass and 90 to 98% by mass of the solvent.
  • the total mass of solid components (substrate (A), compound (B), acid generator (C), crosslinking agent (G), acid diffusion control agent (E), other components (F), etc., optionally used) (hereinafter the same shall apply) is defined as the amount of solid components.
  • Acid generator (C) The composition of this embodiment preferably contains one or more acid generators (C).
  • Acid generator (C) is an acid generator that is directly or indirectly irradiated with any radiation selected from visible light, ultraviolet rays, excimer laser, electron beam, extreme ultraviolet (EUV), X-ray, and ion beam. It is a material that generates acid.
  • the acid generator (C) for example, those described in International Publication No. 2013/024778 can be used. Two or more types of acid generators (C) can also be used in combination.
  • the amount of acid generator (C) used is preferably 0.001 to 49% by mass, more preferably 1 to 40% by mass, even more preferably 3 to 30% by mass, and even more preferably 10 to 25% by mass of the total mass of solid components. Particularly preferred. By using the acid generator (C) within the above range, a pattern profile with high sensitivity and low edge roughness tends to be obtained.
  • the composition of this embodiment preferably contains one or more crosslinking agents (G).
  • the crosslinking agent (G) can crosslink at least either the substrate (A) or the compound (B).
  • the crosslinking agent (G) intramolecularly or intermolecularly crosslinks the base material (A) in the presence of the acid generated from the acid generator (C).
  • acid crosslinking agents include compounds having one or more groups (hereinafter referred to as "crosslinkable groups") capable of crosslinking the base material (A).
  • crosslinkable groups capable of crosslinking the base material (A).
  • crosslinking agent (G) having the crosslinkable group for example, those described in International Publication No. 2013/024778 can be used. Two or more types of crosslinking agents (G) can also be used in combination.
  • the amount of the crosslinking agent (G) used is preferably 0.5 to 50% by mass, more preferably 0.5 to 40% by mass, even more preferably 1 to 30% by mass, based on the total mass of the solid components. ⁇ 20% by weight is particularly preferred.
  • the blending ratio of the crosslinking agent (G) is 0.5% by mass or more, the effect of suppressing the solubility of the resist film in an alkaline developer is improved, and the remaining film rate is reduced and the pattern becomes swollen or meandering.
  • the amount is 50% by mass or less, it tends to be possible to suppress a decrease in heat resistance as a resist.
  • the composition of this embodiment may contain an acid diffusion control agent (E).
  • the acid diffusion control agent (E) has the function of controlling the diffusion of acid generated from the acid generator by radiation irradiation in the resist film, and inhibiting undesirable chemical reactions in unexposed areas.
  • the storage stability of the composition of this embodiment tends to be improved.
  • the resolution of the film formed using the composition of this embodiment can be improved.
  • the acid diffusion control agent (E) it is possible to suppress changes in the line width of the resist pattern due to variations in the holding time before radiation irradiation and the holding time after radiation irradiation, thereby improving process stability. tends to improve.
  • Examples of the acid diffusion control agent (E) include radiolytic basic compounds as described in International Publication No. 2013/024778. Two or more types of acid diffusion control agents (E) can also be used together.
  • the blending amount of the acid diffusion control agent (E) is preferably 0.001 to 49% by mass, more preferably 0.01 to 10% by mass, even more preferably 0.01 to 5% by mass, based on the total mass of the solid components. Particularly preferred is .01 to 3% by mass.
  • amount of the acid diffusion control agent (E) is within the above range, it tends to be possible to prevent a decrease in resolution, pattern shape, dimensional fidelity, etc. Furthermore, even if the waiting time from electron beam irradiation to post-irradiation heating becomes long, deterioration of the shape of the upper layer of the pattern can be suppressed.
  • the amount is 10% by mass or less, deterioration in sensitivity, developability of unexposed areas, etc., tends to be prevented.
  • the storage stability of the resist composition is improved, the resolution is improved, and the storage stability due to fluctuations in the holding time before radiation irradiation and the holding time after radiation irradiation is improved. Changes in line width of the resist pattern can be suppressed, and process stability tends to improve.
  • the composition of this embodiment can contain one or more of the following additives as other components (F).
  • Solubility promoter When the solubility of the solid component in the developer is too low, the solubility promoter increases the solubility and appropriately increases the dissolution rate of the compound during development.
  • the solubility promoter preferably has a low molecular weight, such as a low molecular weight phenolic compound. Examples of the low molecular weight phenolic compound include bisphenols, tris(hydroxyphenyl)methane, and the like. Two or more types of solubility promoters can also be used together.
  • the blending amount of the dissolution promoter is adjusted appropriately depending on the type of the solid component used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, and 0 to 1% by mass of the total mass of the solid components. % is more preferred, and 0% by mass is particularly preferred.
  • dissolution control agent When the solubility of the solid component in the developer is too high, the dissolution control agent controls the solubility and appropriately reduces the dissolution rate during development.
  • a dissolution control agent is preferably one that does not undergo chemical changes during processes such as baking, radiation irradiation, and development of the resist film.
  • Dissolution control agents include, but are not particularly limited to, aromatic hydrocarbons such as phenanthrene, anthracene, and acenaphthene; ketones such as acetophenone, benzophenone, and phenylnaphthyl ketone; and methylphenylsulfone, diphenylsulfone, and dinaphthylsulfone. Examples include sulfones and the like. Two or more types of dissolution control agents can also be used together.
  • the blending amount of the dissolution control agent is appropriately adjusted depending on the type of the compound used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, and 0 to 1% by mass based on the total mass of the solid components. is more preferable, and 0% by mass is particularly preferable.
  • sensitizer absorbs the energy of the irradiated radiation and transmits the energy to the acid generator (C), thereby increasing the amount of acid produced and improving the apparent sensitivity of the resist.
  • sensitizers include benzophenones, biacetyls, pyrenes, phenothiazines, and fluorenes. Two or more types of sensitizers can also be used in combination.
  • the amount of the sensitizer to be blended is appropriately adjusted depending on the type of the compound used, but is preferably 0 to 49% by weight, more preferably 0 to 5% by weight, and 0 to 1% by weight based on the total weight of the solid components. More preferably, 0% by mass is particularly preferred.
  • the surfactant improves the applicability and striation of the composition of this embodiment, the developability of the resist, and the like.
  • the surfactant may be an anionic surfactant, a cationic surfactant, a nonionic surfactant, or an amphoteric surfactant.
  • Preferred surfactants include nonionic surfactants.
  • the nonionic surfactant has good affinity with the solvent used for producing the composition of this embodiment, and can further enhance the effect of the composition of this embodiment.
  • nonionic surfactants include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, higher fatty acid diesters of polyethylene glycol, etc., but are not particularly limited.
  • the blending amount of the surfactant is appropriately adjusted depending on the type of the solid component used, but is preferably 0 to 49% by mass, more preferably 0 to 5% by mass, and 0 to 1% by mass of the total mass of the solid components. % is more preferred, and 0% by mass is particularly preferred.
  • Organic carboxylic acids, phosphorus oxoacids, or derivatives of the oxoacids can prevent sensitivity deterioration, improve resist pattern shape, or improve retention stability, etc. It has the effect of Examples of the organic carboxylic acid include malonic acid as described in Patent Document 1.
  • Examples of the phosphorus oxoacid or its derivative include derivatives such as phosphonic acid or its ester as described in Patent Document 1, and among these, phosphonic acid is particularly preferred.
  • the above acids or derivatives can be used alone or in combination of two or more.
  • the amount of the acid or derivative to be blended is appropriately adjusted depending on the type of the compound used, but is preferably 0 to 49% by weight, more preferably 0 to 5% by weight, and 0 to 1% by weight based on the total weight of the solid components. % is more preferred, and 0% by mass is particularly preferred.
  • the composition of this embodiment may contain additives other than the above-mentioned components, if necessary.
  • additives include dyes, pigments, adhesion aids, and the like.
  • a dye or a pigment because it can make the latent image in the exposed area visible and alleviate the effects of halation during exposure.
  • an adhesion aid because it can improve the adhesion to the substrate.
  • other additives include antihalation agents, storage stabilizers, antifoaming agents, shape improvers, and specifically 4-hydroxy-4'-methylchalcone.
  • the amount of compound B is preferably 10 ppm to 10% by mass based on the total mass of solid components of the composition.
  • the total mass of solid components refers to the base material (A), compound (B), acid generator (C), crosslinking agent (G), acid diffusion control agent (E), other components (F), etc. is the sum of solid components including optionally used components.
  • the mass ratio of the base material (A) to the compound (B) is preferably 3:97 to 99.5:0.5, more preferably 10:90 to 99:1. When the mass ratio is within this range, high sensitivity and exposure variations in the depth direction tend to be suppressed.
  • the mass ratio is more preferably 30:70 to 98:2, and even more preferably 50:50 to 97:3.
  • the total amount of the base material (A) and the compound (B) is preferably 50 to 99.4% by mass, more preferably 55 to 95% by mass, based on the total mass of the solid components. More preferably 60 to 95% by mass, particularly preferably 70 to 95% by mass.
  • the resolution tends to be further improved and the line edge roughness (LER) tends to be further reduced.
  • the (A)/(B)/(C)/(G)/(E)/(F) mass ratio (mass%) is the total solid mass of the composition of this embodiment.
  • it is 1.5-99.0/0.2-96.4/0.001-49/0-49/0.001-49/0-49, More preferably, it is 5-98.5/0.5-89/1-40/0-40/0.01-10/0-5, More preferably 15-97.5/1-69/3-30/0-30/0.01-5/0-1, Particularly preferably 25-96.5/1.5-50/3-30/0-30/0.01-3/0.
  • the blending ratio of each component is selected from each range so that the sum total is 100% by mass.
  • performance such as sensitivity, resolution, and developability tends to be excellent.
  • Solid content refers to the components excluding the solvent
  • total solid mass refers to the total of the components constituting the composition excluding the solvent, which is 100% by mass.
  • composition of this embodiment is usually prepared by dissolving each component in a solvent to form a homogeneous solution at the time of use, and then, if necessary, filtering it with a filter having a pore size of about 0.2 ⁇ m, etc. .
  • composition of this embodiment can form an amorphous film by spin coating. Furthermore, the composition of this embodiment can be applied to general semiconductor manufacturing processes. Further, the composition of this embodiment can be used to create either a positive resist pattern or a negative resist pattern depending on the type of developer used.
  • the lithography composition containing the compound (B) exhibits an excellent sensitizing effect in EUV exposure. Accordingly, the present invention also provides a method of increasing the sensitivity of lithographic compositions in EUV exposure. As mentioned above, it is preferable to use two or more types of compound (B) in the sensitization method.
  • the residual amount of metal impurities in the composition is preferably less than 1 ppm, more preferably less than 100 ppb, even more preferably less than 50 ppb, even more preferably less than 10 ppb. , most preferably less than 1 ppb.
  • metal species classified as transition metals such as Fe, Ni, Sn, Zn, Cu, Sb, W, and Al
  • the residual amount of the metal is 1 ppm or more, it may deteriorate over time due to interaction with other compounds. There is a concern that it may cause denaturation or deterioration of the material.
  • alkali metals or alkaline metals such as Na, K, Ca, Mg, etc.
  • Example 1 Compound having a benzene ring as a core A compound was produced according to the scheme below. The reaction was carried out under nitrogen flow.
  • Example 1a Compound 2 having a benzene ring as the core 60 ml of acetone was added to 16 g (65 mmol) of 5-iodovanillin, and the mixture was cooled on ice. After adding 8.2 g (63 mmol) of diisopropylethylamine under nitrogen, 6.4 ml (0.84 mol) of chloromethyl ethyl ether was added dropwise at 12° C. or lower. The mixture was stirred at 3° C. for 15 minutes, and 100 ml of water was slowly added. The precipitate was collected by filtration and washed with water. The obtained solid was suspended and stirred in 70 ml of methanol and filtered.
  • Example 1b Compound 3 having a benzene ring as the core Compound 3 was obtained in the same manner as in Example 1, using 9.38 g of ethyl vinyl ether instead of 12.3 g of chloromethyl ethyl ether.
  • Example 1c Compound 4 having a benzene ring as the core Compound 4 was obtained in the same manner as in Example 1, using 11.2 g of tetrahydropyran instead of 12.3 g of chloromethyl ethyl ether.
  • Example 1d Compound 5 having a benzene ring as the core Compound 5 was obtained in the same manner as in Example 1, using 14.2 g of di-tert-butyl dicarbonate instead of 12.3 g of chloromethyl ethyl ether.
  • Example 1e Compound 6 having a benzene ring as the core 3,5-diiodo-4-hydroxybenzyl alcohol was obtained in the same manner as in Example 1. After adding 3,5-diiodo-4-hydroxybenzyl alcohol and THF and stirring to dissolve them, phosgene (2 equivalents to the raw material, 20% toluene solution, manufactured by Merck) was added under ice cooling under a nitrogen atmosphere. was added dropwise, and the mixture was further stirred for 2 hours under ice cooling. The mixture was further stirred at 25°C for 12 hours. Thereafter, nitrogen bubbling was performed for 2 hours, and then the carbonate ester (1e0) was obtained by concentration under reduced pressure.
  • phosgene 2 equivalents to the raw material, 20% toluene solution, manufactured by Merck
  • the obtained carbonate ester (1e0) was placed in chloroform and stirred under ice cooling to dissolve. Furthermore, 1-methylcyclopentanol (1.2 equivalents relative to the above (1e0)) was added dropwise under ice cooling, and the mixture was stirred. Furthermore, pyridine (1.2 equivalents relative to the above (1e0)) was added dropwise under ice cooling, and the mixture was stirred. After stirring for 1 hour, stirring was continued for 12 hours at 25°C. Then, after adding ion-exchanged water, the organic phase was collected. The obtained organic phase was washed with 5% aqueous sodium bicarbonate, washed five times with ion-exchanged water, and then concentrated under reduced pressure to obtain compound (6).
  • Example 1f Compound 7 having a benzene ring as the core Compound 7 was obtained in the same manner as in Example 1, using 10.5 g of chloromethyl methyl ether instead of 12.3 g of chloromethyl ethyl ether.
  • a 30 L glass reaction vessel was charged with 2172 g (8.55 mol) of 3,4-diethoxymethoxybenzaldehyde and 5.6 L of methanol as raw materials, and nitrogen blowing into the reaction vessel at a flow rate of 200 mL/min and stirring were started. After confirming the dissolution of the raw materials, 2.6 L of ion-exchanged water and 634 g (5.99 mol) of sodium carbonate were charged, and the mixture was stirred at room temperature of 22° C. for 3 hours.
  • DMF dimethylformamide
  • 700 g of 4-hydroxybenzaldehyde was dehydrated in an ice bath under a nitrogen flow
  • 822 g of diisopropylethylamine was added using a dropping funnel over 30 minutes while stirring in an ice bath, and the mixture was further stirred for 60 minutes.
  • 553 g of chloromethyl ethyl ether (1.2 equivalents relative to the substrate) was added dropwise to the stirred reaction solution using a dropping funnel over 60 minutes, and the mixture was further stirred for 30 minutes in an ice bath.
  • DML2R was synthesized in the same manner as Synthesis Example DML1, except that 4-hydroxybenzaldehyde was used as the raw material, the type of protecting agent was ethyl vinyl ether, and the [protecting group introduction step] was changed to the method described below. did.
  • Synthesis Example DML3 The procedure was the same as in Synthesis Example DML2, except that 4-hydroxybenzaldehyde was used as the raw material, the type of protecting agent was 3,4-dihydropyran, and the [protecting group introduction step] was changed to the method described below. , synthesized DML3R.
  • Synthesis Example DML4R was synthesized in the same manner as Synthesis Example DML1, except that 4-hydroxybenzaldehyde was used as a raw material, the type of protecting agent was changed, and the [protecting group introduction step] was changed to the method described below.
  • Synthesis Example DML7 was synthesized in the same manner as Synthesis Example DML1 except that 3,4-dihydroxybenzaldehyde was used as a raw material. However, in the protecting group introduction step, the amounts of diisopropylmethylamine and chloromethyl ethyl ether were doubled relative to the raw material 3,4-dihydroxybenzaldehyde.
  • Example 2 Compound having a naphthalene ring as a core A compound was produced according to the scheme below. The reaction was carried out under nitrogen flow.
  • Compound DMNa-2b-1 was obtained in the same manner as in the iodination step DML1D except that 2-hydroxy-3-naphthaldehyde was used instead of 4-hydroxybenzaldehyde.
  • compound Na-2b-1P was obtained in the same manner as in the protecting group introduction step DML1P except that compound DMNa-2b-1 was used instead of 5-iodovanillin.
  • compound DMNa-2b-1R was obtained in the same manner as in the reduction step DML1R except that compound DMNa-2b-1P was used instead of DML1P.
  • Example 3 Compound having an adamantane ring as a core A compound was produced according to the scheme below.
  • a flask equipped with a stirrer and a cooling tube was immersed in an oil bath, and 80 g of compound 3-1 (manufactured by Mitsubishi Gas Chemical Co., Ltd., 0.43 mol) and 2.5 L of toluene were charged into the flask and stirred. Then, 400 g (1.72 mol) of a 55% aqueous hydrogen iodide solution was added into the flask. The reaction was carried out at an internal temperature of 83 to 89°C for 32 hours. Furthermore, 50 g of a 55% aqueous hydrogen iodide solution was added into the flask. The reaction was carried out at an internal temperature of 83 to 89°C for 16 hours.
  • the organic phase was filtered and washed with chilled toluene and hexane to obtain 145 g of wet cake.
  • the wet cake was dried under reduced pressure at 40° C. for 2.5 hours to obtain 138 g of pale red crystals.
  • the crystals were then mixed with 1.3 L of ethyl acetate and heated to 70°C to dissolve.
  • the ethyl acetate solution was cooled to room temperature. 650 mL of 0.5% sodium sulfite aqueous solution was added to the liquid, stirred, and separated, and the ethyl acetate phase was taken out.
  • Compound Ad-2-2 was obtained in the same manner as in Example 3, except that compound Ad-2-1 was used instead of compound 3-1.
  • Ad-2-3 10 g was dissolved in 30 ml of THF, and after cooling on ice, 7.7 g of succinic acid chloride was added dropwise. After the dropwise addition was completed, the reaction was carried out at 60°C for 2 hours. THF was distilled off from the reaction solution, toluene was added to the residue, and the precipitated solid was filtered to obtain 11 g of Ad-2-3.
  • a flask equipped with a reflux tube and Dean-Stark was immersed in an oil bath, and 80 g of compound 3-1 (manufactured by Mitsubishi Gas Chemical Co., Ltd., 0.43 mol) and 2.5 L of o-xylene were charged into the flask and stirred. Next, 400 g (1.72 mol) of a 55% aqueous hydrogen iodide solution was added into the flask. The internal temperature was raised to 125°C and the reaction was carried out for 3 hours. Thereafter, stirring was performed in a water bath at 25°C for 1 hour.
  • a flask equipped with a reflux tube and Dean-Stark was immersed in an oil bath, and 87.9 g of compound Ad-2-1 (0.43 mol) and 2.5 L of toluene were charged into the flask and stirred. Then, 400 g (1.72 mol) of a 55% aqueous hydrogen iodide solution was added into the flask. The internal temperature was set to 100°C and the reaction was carried out for 3 hours. Thereafter, stirring was performed for 1 hour in a 25°C water bath.
  • composition for lithography (base material A) Dissolve 0.5 g of 4-hydroxystyrene, 4.0 g of 2-methyl-2-adamantyl methacrylate, 0.9 g of ⁇ -butyrolactone methacrylate, and 1.5 g of hydroxyadamantyl methacrylate in 45 mL of tetrahydrofuran, 0.20 g of azobisisobutyronitrile was added. After refluxing for 12 hours, the reaction solution was added dropwise to 2 L of n-heptane. The precipitated polymer was filtered and dried under reduced pressure to obtain a white powdery polymer MAR represented by the following formula (MAR).
  • the weight average molecular weight (Mw) of this polymer was 11,500, and the degree of dispersion (Mw/Mn) was 1.90.
  • the formula (MAR) below is written simply to show the ratio of each constituent unit, but the arrangement order of each constituent unit is random, and each constituent unit forms an independent block. It is not a block copolymer.
  • the main chain carbon is directly bonded to the benzene ring, and for methacrylate units (2-methyl-2-adamantyl methacrylate, ⁇ -butyrolactone methacrylate, and hydroxyadamantyl methacrylate) calculated the molar ratio of the carbonyl carbon of the ester bond based on the respective integral ratios.
  • composition Using Compound 1-3 synthesized in Example 1, Compound 2-3 synthesized in Example 2, Compound 2-4, and Compound 3-2 synthesized in Example 3 as Compound B, the composition shown in Table 1 was prepared. I prepared something. The following acid generators, acid diffusion inhibitors, and organic solvents were used. Acid generator: Midori Chemical Co., Ltd. Triphenylsulfonium nonafluorobutanesulfonate (TPS-109) Acid diffusion control agent: Kanto Chemical tri-n-octylamine (TOA) Organic solvent: Kanto Chemical Propylene Glycol Monomethyl Ether Acetate (PGMEA)
  • the cross-sectional shape of the obtained 50 nm L/S (1:1) resist pattern was observed using an electron microscope (S-4800) manufactured by Hitachi, Ltd.
  • the pattern width at a position 10% above the pattern height from the surface of the silicon wafer is less than +10% of the half width of the cross section of the pattern. ”, and those with a value of +10% or more of the half width were evaluated as “C”.
  • the minimum amount of electron beam energy that can draw a shape without pattern collapse is defined as "electron beam drawing sensitivity”
  • those that are equivalent to or higher than Comparative Example 1 are designated as "A”
  • those that are inferior to Comparative Example 1 are designated as "C”. It was evaluated as
  • Examples 8 to 11 EUV exposure sensitivity, etching defects (EUV exposure sensitivity)
  • the compositions prepared in Examples 4 to 7 were spin-coated onto a silicon wafer, and then baked at 110° C. for 60 seconds to form a photoresist layer with a thickness of 100 nm.
  • Compound 3-1 was used in place of Compound 1-3 of Example 4.
  • the exposure amount was increased from 1 mJ/cm 2 to 80 mJ/cm 2 in steps of 1 mJ/cm 2 using an extreme ultraviolet (EUV) exposure device "EUVES-7000" (product name, manufactured by Lithotech Japan Co., Ltd.) without a mask.
  • EUV extreme ultraviolet
  • TMAH tetramethylammonium hydroxide
  • the composition used in the EUV exposure sensitivity measurement was applied onto an 8-inch silicon wafer with a 100 nm thick oxide film formed on the top layer, and baked at 110°C for 60 seconds to form a 100 nm thick photoresist layer. Formed.
  • EUV extreme ultraviolet
  • EUVES-7000 product name, manufactured by Litho Tech Japan Co., Ltd.
  • the entire surface of the wafer was subjected to shot exposure, then baked (PEB) at 110° C. for 90 seconds, developed with a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution for 60 seconds, and the entire surface of the wafer was exposed to 80 shots. Got the wafer that went.
  • the produced exposed wafer was etched using CF 4 /Ar gas using an etching apparatus "Telius SCCM" (product name, manufactured by Tokyo Electron Ltd.) until the oxide film was etched by 50 nm. Wafers produced by etching were evaluated for defects using a defect inspection device "Surfscan SP5" (product name, manufactured by KLA), and the number of cone defects of 19 nm or more was determined as an index of etching defects. (Evaluation criteria) A: Number of cone defects ⁇ 10 B: 10 ⁇ Number of cone defects ⁇ 80 C: 80 ⁇ Number of cone defects ⁇ 400 D: 400 ⁇ Number of cone defects
  • Example 12 Acid-purified product of compound 3-2 (Treatment 1: acid-purification)
  • a 1000 mL four-necked flask (bottomed type) was charged with 150 g of a solution (10% by mass) of compound 3-2 dissolved in PGMEA, and heated to 80° C. with stirring.
  • 37.5 g of an oxalic acid aqueous solution (pH 1.3) was added, stirred for 5 minutes, and then allowed to stand for 30 minutes. This separated the oil phase and the aqueous phase, and the aqueous phase was removed.
  • EUV exposure sensitivity, etching defects In the same manner as in Example 8, EUV exposure sensitivity and etching defects were measured using purified Compound 3-2. The measurement results are shown in Table 5.
  • the filtered material was placed in a container equipped with a stirrer, 500 mL of methanol was added, and the mixture was stirred for 15 minutes.
  • the precipitate was filtered and washed with 150 mL of methanol.
  • the precipitate was separated using column chromatography (spherical silica 60N manufactured by Kanto Kagaku Co., Ltd.) by applying a gradient such that the ratio of ethyl acetate:hexane was 1:9 to 9:1 as a developing solvent, and compound 1-1 and compound 1-1 were separated.
  • Compound 1-1a and Compound 1-1b were obtained at a relative ratio of about 1:0.9:0.5.
  • Example 14 to 18 Evaluation of EUV exposure sensitivity and etching defects
  • a composition was prepared using the following compound as compound B, and the EUV exposure sensitivity and etching defects were evaluated in the same manner as in Example 8. Assessed defects. However, the etching defects were evaluated based on the following criteria. (Evaluation criteria) S: Number of cone defects ⁇ 6 pieces A': 6 pieces ⁇ Number of cone defects ⁇ 10 pieces B: 10 pieces ⁇ Number of cone defects ⁇ 80 pieces C: 80 pieces ⁇ Number of cone defects ⁇ 400 pieces D: 400 pieces ⁇ Number of cone defects
  • the compound of the present embodiment has industrial applicability, such as being able to provide a lithography composition with high sensitivity and few defects in EUV exposure while maintaining good pattern shape.
  • Example B Example 4 except that Compound B listed in Table 6 was used instead of Compound 1-3 listed in Example 14 in Table 5, and the post-exposure bake temperature was 100°C for 120 seconds. Evaluation was performed in the same manner as in 8. As a result, as shown in Table 7, good evaluation results similar to Examples 4 and 8 were confirmed in terms of resist pattern and sensitivity.
  • Example C EUV sensitivity and etching defects were evaluated in the same manner as in Example 15, except that Compound B1 and Compound B2 listed in Table 8 were used in the following ratios instead of Compound 1-3 and Compound 1-3a.
  • Example D Compounds subjected to treatment 1 or treatment 2 were obtained in the same manner as in Example 12, except that the compounds shown in Table 10 were used instead of compound 3-2, and the EUV sensitivity and etching defects were evaluated. As a result, as in Example 12, good results were confirmed in terms of EUV sensitivity and etching defects for all compounds.
  • Example 101B According to the method of Example 4, the following composition was prepared. (Number: parts by mass)
  • Example 101D The following composition was prepared according to the method of Example 4 (number: parts by mass). The stability of the composition over time was evaluated in the same manner as in Example 101B.
  • Example 102B The following composition was prepared according to the method of Example 4 (number: parts by mass). The stability of the composition over time was evaluated in the same manner as in Example 101B.
  • Example 4 The following composition was prepared according to the method of Example 4 (number: parts by mass). The stability of the composition over time was evaluated in the same manner as in Example 101B.
  • Example 103B The following composition was prepared according to the method of Example 4 (number: parts by mass). The stability of the composition over time was evaluated in the same manner as in Example 101B.
  • Example 103D The following composition was prepared according to the method of Example 4 (number: parts by mass). The stability of the composition over time was evaluated in the same manner as in Example 101B.
  • Examples 104B to 106B A time-course test was conducted in the same manner as in Example 101B except that Compound B1 and Compound B2 in Example 101B were changed to the compounds listed in the table below. As a result, the same results as in Example 101B were obtained.
  • Example 101D A time-course test was conducted in the same manner as in Example 101D, except that Compound B1 and Compound B2 in Example 101D were changed to the compounds listed in the table below. As a result, the same results as in Example 101D were obtained.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Indole Compounds (AREA)
PCT/JP2023/015256 2022-04-08 2023-04-10 ヨウ素原子を有する環状化合物 Ceased WO2023195546A1 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2024514332A JPWO2023195546A1 (https=) 2022-04-08 2023-04-10
KR1020247037226A KR20250004735A (ko) 2022-04-08 2023-04-10 요오드원자를 갖는 환상 화합물
CN202380032674.7A CN118973989A (zh) 2022-04-08 2023-04-10 具有碘原子的环状化合物
US18/855,112 US20250250216A1 (en) 2022-04-08 2023-04-10 Cyclic compound having iodine atom
JP2025513784A JPWO2024214321A1 (https=) 2023-04-10 2023-10-11
KR1020257025196A KR20260006548A (ko) 2023-04-10 2023-10-11 화합물, 조성물, 증감 효과를 발현하는 방법 및 제조방법
TW112138810A TW202441289A (zh) 2023-04-10 2023-10-11 化合物、組成物、表現增感效果的方法及製造方法
CN202380096847.1A CN121057722A (zh) 2023-04-10 2023-10-11 化合物、组合物、显现增敏效果的方法和制造方法
PCT/JP2023/036897 WO2024214321A1 (ja) 2023-04-10 2023-10-11 化合物、組成物、増感効果を発現する方法および製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022064331 2022-04-08
JP2022-064331 2022-04-08

Publications (1)

Publication Number Publication Date
WO2023195546A1 true WO2023195546A1 (ja) 2023-10-12

Family

ID=88243160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/015256 Ceased WO2023195546A1 (ja) 2022-04-08 2023-04-10 ヨウ素原子を有する環状化合物

Country Status (6)

Country Link
US (1) US20250250216A1 (https=)
JP (1) JPWO2023195546A1 (https=)
KR (1) KR20250004735A (https=)
CN (1) CN118973989A (https=)
TW (1) TW202411185A (https=)
WO (1) WO2023195546A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033019A1 (ja) * 2023-08-10 2025-02-13 三菱瓦斯化学株式会社 化合物、組成物、増感効果を発現する方法および製造方法
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
WO2025079646A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 有機ハロゲン化合物の製造方法、化合物、酸発生剤、塩基発生剤、クエンチャー、重合体、組成物及びレジストパターン形成方法
WO2025182419A1 (ja) * 2024-02-29 2025-09-04 三菱瓦斯化学株式会社 組成物

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513620A (ja) * 2005-10-26 2009-04-02 ガルデルマ・リサーチ・アンド・デヴェロップメント Ｐｐａｒを調節する二芳香族化合物
WO2015152128A1 (ja) * 2014-03-31 2015-10-08 長瀬産業株式会社 アミノ酸前駆体、アミノ酸およびその製造方法、ならびに該アミノ酸を用いたｐｅｔ診断用トレーサー
JP2016533394A (ja) * 2013-09-30 2016-10-27 エルジー・ケム・リミテッド 重合性液晶化合物、これを含む液晶組成物および光学フィルム
WO2021157551A1 (ja) * 2020-02-06 2021-08-12 三菱瓦斯化学株式会社 リソグラフィー用組成物及びパターン形成方法
WO2021230300A1 (ja) * 2020-05-15 2021-11-18 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、レジストパターン形成方法、並びに化合物及び（共）重合体の製造方法
JP2021188041A (ja) * 2020-06-01 2021-12-13 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2022135974A (ja) * 2021-03-04 2022-09-15 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2022141598A (ja) * 2021-03-15 2022-09-29 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2022164584A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112639020A (zh) 2018-08-24 2021-04-09 三菱瓦斯化学株式会社 化合物、包含其的组合物、以及抗蚀图案的形成方法和绝缘膜的形成方法
TWI849314B (zh) 2020-06-01 2024-07-21 日商住友化學股份有限公司 化合物、樹脂、抗蝕劑組成物及抗蝕劑圖案的製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009513620A (ja) * 2005-10-26 2009-04-02 ガルデルマ・リサーチ・アンド・デヴェロップメント Ｐｐａｒを調節する二芳香族化合物
JP2016533394A (ja) * 2013-09-30 2016-10-27 エルジー・ケム・リミテッド 重合性液晶化合物、これを含む液晶組成物および光学フィルム
WO2015152128A1 (ja) * 2014-03-31 2015-10-08 長瀬産業株式会社 アミノ酸前駆体、アミノ酸およびその製造方法、ならびに該アミノ酸を用いたｐｅｔ診断用トレーサー
WO2021157551A1 (ja) * 2020-02-06 2021-08-12 三菱瓦斯化学株式会社 リソグラフィー用組成物及びパターン形成方法
WO2021230300A1 (ja) * 2020-05-15 2021-11-18 三菱瓦斯化学株式会社 化合物、（共）重合体、組成物、レジストパターン形成方法、並びに化合物及び（共）重合体の製造方法
JP2021188041A (ja) * 2020-06-01 2021-12-13 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法
JP2022135974A (ja) * 2021-03-04 2022-09-15 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP2022141598A (ja) * 2021-03-15 2022-09-29 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2022164584A (ja) * 2021-04-15 2022-10-27 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法

Non-Patent Citations (14)

* Cited by examiner, † Cited by third party
Title
AL HUSSAINY RANA, VERBEEK JOOST, VAN DER BORN DION, BRAKER ANTON H., LEYSEN JOSÉE E., KNOL REMCO J., BOOIJ JAN, HERSCHEID J. (KOOS: "Design, Synthesis, Radiolabeling, and in Vitro and in Vivo Evaluation of Bridgehead Iodinated Analogues of N -{2-[4-(2-Methoxyphenyl)piperazin-1-yl]ethyl}- N -(pyridin-2-yl)cyclohexanecarboxamide (WAY-100635) as Potential SPECT Ligands for the 5-HT 1A Receptor", JOURNAL OF MEDICINAL CHEMISTRY, AMERICAN CHEMICAL SOCIETY, US, vol. 54, no. 10, 26 May 2011 (2011-05-26), US , pages 3480 - 3491, XP093097924, ISSN: 0022-2623, DOI: 10.1021/jm1009956 *
DATABASE REGISTRY ANONYMOUS : "- Benzenemethanol, 3-iodo-5-methoxy-4-[3-[(tetrahydro-2H-pyran-2- yl)methoxy]propoxy]- (CA INDEX NAME)", XP093097934, retrieved from STN *
DATABASE REGISTRY ANONYMOUS : "-Benzoic acid, 4-iodo-3-(1-methoxyethoxy)-(CA INDEX NAME) ", XP093097936, retrieved from STN *
DEFRANCQ ERIC, TABACCHI RAFFAELE: "The synthesis of [ 14 C] labelled Eutypine", JOURNAL OF LABELLED COMPOUNDS AND RADIOPHARMACEUTICALS, JOHN WILEY & SONS LTD., GB, vol. 31, no. 12, 1 December 1992 (1992-12-01), GB , pages 1057 - 1063, XP093097888, ISSN: 0362-4803, DOI: 10.1002/jlcr.2580311214 *
FEATHERSTON AARON L., KWON YONGSEOK, POMPEO MATTHEW M., ENGL OLIVER D., LEAHY DAVID K., MILLER SCOTT J.: "Catalytic asymmetric and stereodivergent oligonucleotide synthesis", SCIENCE, AMERICAN ASSOCIATION FOR THE ADVANCEMENT OF SCIENCE, US, vol. 371, no. 6530, 12 February 2021 (2021-02-12), US , pages 702 - 707, XP093097929, ISSN: 0036-8075, DOI: 10.1126/science.abf4359 *
FRIDMAN A L; SIVKOVA M P; ZALESOV V S; DOLBILKIN K V; MOISEEV I K; DOROSHENKO R I; MANZHELEVSKAYA E V: "SYNTHESIS AND BIOLOGICAL ACTIVITY OF ADAMANTANE DERIVATIVES", KHIMIKO-FARMATSEVTICHESKII ZHURNAL, IZDATEL'STVO FOLIUM, RU, vol. 13, no. 12, 1 January 1979 (1979-01-01), RU , pages 24 - 31, XP009147275, ISSN: 0023-1134 *
GAO Y, ET AL.: "Utilization of a peptide lead for the discovery of a novel PTP1B-binding motif", JOURNAL OF MEDICINAL CHEMISTRY, AMERICAN CHEMICAL SOCIETY, US, vol. 44, no. 18, 1 January 2001 (2001-01-01), US , pages 2869 - 2878, XP002982270, ISSN: 0022-2623, DOI: 10.1021/jm010020r *
HU LONG, DIETL MARTIN C., HAN CHUNYU, RUDOLPH MATTHIAS, ROMINGER FRANK, HASHMI A. STEPHEN K.: "Au–Ag Bimetallic Catalysis: 3‐Alkynyl Benzofurans from Phenols via Tandem C−H Alkynylation/Oxy‐Alkynylation", ANGEWANDTE CHEMIE INTERNATIONAL EDITION, VERLAG CHEMIE, HOBOKEN, USA, vol. 60, no. 19, 3 May 2021 (2021-05-03), Hoboken, USA, pages 10637 - 10642, XP093097884, ISSN: 1433-7851, DOI: 10.1002/anie.202016595 *
KANG, D.W. RYU, H. LEE, J. LANG, K.A. PAVLYUKOVETS, V.A. PEARCE, L.V. IKEDA, T. LAZAR, J. BLUMBERG, P.M.: "Halogenation of 4-hydroxy-3-methoxybenzyl thiourea TRPV1 agonists showed enhanced antagonism to capsaicin", BIOORGANIC & MEDICINAL CHEMISTRY LETTERS, ELSEVIER, AMSTERDAM NL, vol. 17, no. 1, 22 December 2006 (2006-12-22), Amsterdam NL , pages 214 - 219, XP005812145, ISSN: 0960-894X, DOI: 10.1016/j.bmcl.2006.09.059 *
LE BOURDONNEC BERTRAND, WINDH ROLF T., LEISTER LARA K., ZHOU Q. JEAN, AJELLO CHRISTOPHER W., GU MINGHUA, CHU GUO-HUA, TUTHILL PAUL: "Spirocyclic Delta Opioid Receptor Agonists for the Treatment of Pain: Discovery of N , N -Diethyl-3-hydroxy-4-(spiro[chromene-2,4′-piperidine]-4-yl) Benzamide (ADL5747)", JOURNAL OF MEDICINAL CHEMISTRY, AMERICAN CHEMICAL SOCIETY, US, vol. 52, no. 18, 24 September 2009 (2009-09-24), US , pages 5685 - 5702, XP093097887, ISSN: 0022-2623, DOI: 10.1021/jm900773n *
LIU YAN, ZHANG SHUWEI, MIAO QIAN, ZHENG LIFEI, ZONG LILI, CHENG YIXIANG: "Fluorescent Chemosensory Conjugated Polymers Based on Optically Active Polybinaphthyls and 2,2‘-Bipyridyl Units", MACROMOLECULES, 40, 1 July 2007 (2007-07-01), pages 4839 - 4847, XP055933924, Retrieved from the Internet <URL:https://pubs.acs.org/doi/pdf/10.1021/ma0701437> [retrieved on 20220621], DOI: 10.1021/ma0701437 *
TAKASHI IKAWA, AKIRA TAKAGI, YURIO KURITA, KOZUMO SAITO, KENJI AZECHI, MASAHIRO EGI, KEISUKE KAKIGUCHI, YASUYUKI KITA, SHUJI AKAI: "Preparation and Regioselective Diels-Alder Reactions of Borylbenzynes: Synthesis of Functionalized Arylboronates", ANGEWANDTE CHEMIE INTERNATIONAL EDITION, ¬VERLAG CHEMIE| :, vol. 49, no. 32, 26 July 2010 (2010-07-26), pages 5563 - 5566, XP055017375, ISSN: 14337851, DOI: 10.1002/anie.201002191 *
YUKI OHISHI; HAJIME ABE; MASAHIKO INOUYE: "Saccharide Recognition and Helix Formation in Water with an Amphiphilic Pyridine–Phenol Alternating Oligomer", EUROPEAN JOURNAL OF ORGANIC CHEMISTRY, WILEY-VCH, DE, vol. 2017, no. 46, 14 December 2017 (2017-12-14), DE , pages 6975 - 6979, XP072123038, ISSN: 1434-193X, DOI: 10.1002/ejoc.201701522 *
YUSAKU NOMURA; FRÉDÉRIC THUAUD; DAISUKE SEKINE; AKIHIRO ITO; SATOKO MAEDA; HIROYUKI KOSHINO; DAISUKE HASHIZUME; ATSUYA MURANAKA; T: "Synthesis of All Stereoisomers of Monomeric Spectomycin A1/A2 and Evaluation of Their Protein SUMOylation‐Inhibitory Activity", CHEMISTRY - A EUROPEAN JOURNAL, JOHN WILEY & SONS, INC, DE, vol. 25, no. 35, 20 May 2019 (2019-05-20), DE, pages 8387 - 8392, XP071849040, ISSN: 0947-6539, DOI: 10.1002/chem.201901093 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033019A1 (ja) * 2023-08-10 2025-02-13 三菱瓦斯化学株式会社 化合物、組成物、増感効果を発現する方法および製造方法
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
WO2025079646A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 有機ハロゲン化合物の製造方法、化合物、酸発生剤、塩基発生剤、クエンチャー、重合体、組成物及びレジストパターン形成方法
WO2025182419A1 (ja) * 2024-02-29 2025-09-04 三菱瓦斯化学株式会社 組成物

Also Published As

Publication number Publication date
TW202411185A (zh) 2024-03-16
CN118973989A (zh) 2024-11-15
JPWO2023195546A1 (https=) 2023-10-12
KR20250004735A (ko) 2025-01-08
US20250250216A1 (en) 2025-08-07

Similar Documents

Publication Publication Date Title
WO2023195546A1 (ja) ヨウ素原子を有する環状化合物
TWI722328B (zh) 含碘的光酸產生劑及包括其的組合物
JP7582193B2 (ja) 化合物、重合体、組成物、膜形成用組成物、パターン形成方法、絶縁膜の形成方法及び化合物の製造方法、並びにヨウ素含有ビニルポリマーおよびそのアセチル化誘導体の製造方法
TWI403846B (zh) 正型光阻組成物，光阻圖型之形成方法及高分子化合物
JP5979258B2 (ja) 重合体
CN103044256B (zh) 杯芳烃和包含杯芳烃的光致抗蚀剂组合物
CN102629074B (zh) 光酸产生剂、其制备方法及包含光酸产生剂的抗蚀剂组合物
CN102884094B (zh) 金刚烷基(甲基)丙烯酸系单体和在重复单元中包含其的(甲基)丙烯酸系聚合物
TW201819434A (zh) 圖案形成方法、電子元件的製造方法、套組
KR102802385B1 (ko) 감활성광선성 또는 감방사선성 수지 조성물, 레지스트막, 패턴 형성 방법, 전자 디바이스의 제조 방법
TW202112734A (zh) 化合物、（共）聚合物、組成物及圖型形成方法
WO2025033019A1 (ja) 化合物、組成物、増感効果を発現する方法および製造方法
JP5104343B2 (ja) モノマー、樹脂及び該樹脂を用いたレジスト組成物、並びに、該レジスト組成物を用いた半導体装置の製造方法
JP2020148870A (ja) 感放射線性樹脂組成物、レジストパターン形成方法及び感放射線性酸発生剤
Kudo et al. Synthesis and property of tellurium-containing molecular resist materials for extreme ultraviolet lithography system
WO2025182419A1 (ja) 組成物
WO2009122752A1 (ja) フォトレジスト用高分子化合物
CN121889366A (zh) 化合物、组合物、树脂组合物、膜形成用组合物、光刻用膜形成用组合物、抗蚀剂膜形成用组合物
JP2008063309A (ja) 重合性化合物の製造方法
KR20220021473A (ko) 감방사선성 수지 조성물 및 레지스트 패턴 형성 방법
WO2012032790A1 (ja) 酸解離性溶解抑止基を有する組成物

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23784829

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2024514332

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 202380032674.7

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 1020247037226

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 23784829

Country of ref document: EP

Kind code of ref document: A1

WWP Wipo information: published in national office

Ref document number: 18855112

Country of ref document: US