WO2023182393A1 - Procédé de fabrication de tranche - Google Patents

Procédé de fabrication de tranche Download PDF

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Publication number
WO2023182393A1
WO2023182393A1 PCT/JP2023/011360 JP2023011360W WO2023182393A1 WO 2023182393 A1 WO2023182393 A1 WO 2023182393A1 JP 2023011360 W JP2023011360 W JP 2023011360W WO 2023182393 A1 WO2023182393 A1 WO 2023182393A1
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Prior art keywords
substrate
film
covering
manufacturing
film portion
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PCT/JP2023/011360
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English (en)
Japanese (ja)
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仁明 松森
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株式会社村田製作所
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Publication of WO2023182393A1 publication Critical patent/WO2023182393A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to a method for manufacturing a wafer comprising two stacked substrates.
  • Patent Document 1 Conventionally, as a method for manufacturing this type of wafer, the method described in Patent Document 1, for example, is known.
  • a base wafer hereinafter referred to as a lower substrate
  • a bond wafer hereinafter referred to as an upper substrate
  • An oxide film is formed on the surface of the upper substrate.
  • the lower substrate and the upper substrate are bonded together by heat treatment to form a bonded wafer.
  • the heat treatment is performed in an atmosphere containing oxygen, an oxide film is also formed on the surface of the lower substrate.
  • a bonded wafer in which an oxide film is also formed on the surface of the lower substrate will be referred to as a substrate assembly.
  • the outer peripheral portion of the upper substrate is ground in the thickness direction of the wafer to a depth that does not reach the lower substrate.
  • the portion of the oxide film that was formed on the ground portion of the upper substrate is removed.
  • the unground portion of the outer peripheral portion of the upper substrate is etched by an etching solution that corrodes the substrate.
  • the oxide film on the unground portion remains on the wafer without being etched.
  • the remaining oxide film on the unground portion is etched away by an etching solution that corrodes the oxide film.
  • an object of the present invention is to solve the above problems and to provide a method for manufacturing a wafer in which defects in the oxide film on the lower substrate are suppressed.
  • a wafer manufacturing method includes the following steps: a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part; a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; , an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film; including.
  • the present invention it is possible to manufacture a wafer in which defects in the oxide film on the lower substrate are suppressed.
  • FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG. 1; A cross-sectional view taken along the III-III line in FIG. 1.
  • FIG. 4 is a cross-sectional view showing a step following FIG. 3;
  • FIG. 5 is a sectional view showing a step following FIG. 4;
  • FIG. 6 is an enlarged cross-sectional view showing the process shown in FIG. 5.
  • FIG. 2 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to line III-III in FIG. 1;
  • FIG. 8 is a sectional view showing a step following FIG. 7;
  • a method for manufacturing a wafer includes: a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part; a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; , an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film; including.
  • the etching solution When the upper film part of the oxide film is etched, there is a risk that the etching solution will reach a portion of the lower film part near the upper film part, and at least a part of the lower film part will be etched together with the upper film part.
  • the etching solution When the upper film part of the oxide film is etched, there is a risk that the etching solution will reach a portion of the lower film part near the upper film part, and at least a part of the lower film part will be etched together with the upper film part.
  • at least a portion of the lower film portion is covered with the covering portion during the etching process, so that it is protected from the etching solution.
  • the covering portion straddles the connecting portion between the lower membrane portion and the upper membrane portion in the thickness direction.
  • the above-mentioned nearby portion of the lower film portion is more reliably protected from the etching solution. Therefore, damage to the lower film portion due to etching of the lower film portion together with the upper film portion can be suppressed.
  • the covering portion may cover the entire surface of the lower film portion.
  • the entire surface of the lower film part is protected from the etching solution by the covering part, so compared to a method in which the covering part covers only a part of the surface of the lower film part, the lower film part is Defects caused by etching can be further suppressed.
  • the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction.
  • the surface of the upper membrane portion may have a downward region having a downward component.
  • the surface of the lower membrane portion may have an overlapping region that overlaps with the upper membrane portion and connects to a downward region of the upper membrane portion when viewed along the thickness direction.
  • the covering portion forming step includes a coating step in which a photosensitive resin that becomes soluble in a developer upon exposure to light is applied across the overlapping region of the lower film portion and the downward region of the upper film portion; an exposure step in which the substrate assembly is irradiated with light that exposes the photosensitive resin downward along the thickness direction; and the exposed portion of the photosensitive resin is dissolved by a developer, and the covered portion is removed. It may also include a developing step of forming the image.
  • the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly.
  • the photosensitive resin coated on the upward region of the surface of the upper film portion having upward components is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion and brought into contact with the etching solution.
  • the photosensitive resin applied to the downward facing area of the upper film part and the overlapping area of the lower film part is exposed to light and Remains without solubilization.
  • the photosensitive resin may be poured onto the upper film part and spin-coated onto the entire surface of the upper film part and an overlapping area of the lower film part.
  • the upper film portion may be spin-etched from above.
  • the upper film portion is spin-etched.
  • the etching solution since it is difficult for the etching solution to reach the downward region of the surface of the lower film portion that has a downward component, there is little need to form a covering portion on the downward region of the lower film portion. Therefore, compared to a method in which the upper film portion is etched by a method other than spin etching, the covering portion can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer can be reduced.
  • the substrate assembly may be immersed in the photosensitive resin.
  • the photosensitive resin can also be applied to the downward facing region of the lower film portion.
  • the photosensitive resin applied to the downward region of the lower film portion is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized.
  • the downward area of the lower film part is covered by the covering part, so compared to a method in which the downward facing area is not covered by the covering part, the lower film part is etched together with the upper film part. It is possible to suppress the loss of.
  • the entire surface of the lower film part is protected from the etching solution by the covering part.
  • immersion etching in which the substrate assembly is immersed in an etching solution can be performed. Therefore, wafer manufacturing efficiency can be improved compared to the case where an etching method such as spin etching is employed in which substrate assemblies are processed one by one.
  • the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction.
  • the surface of the upper membrane portion may have a downward region having a downward component.
  • a resin constituting the covering portion may be poured onto the lower film portion and spin-coated onto the entire surface of the lower film portion and a downward region of the upper film portion.
  • the resin is poured onto the lower film part and spin-coated, it is difficult for the resin to reach the upward region of the upper film part. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion more reliably than with other coating methods. Therefore, the upper film portion can be etched more reliably.
  • the step of removing the resin from the surface of the upper film portion to expose the upper film portion for example, exposing and removing the photosensitive resin. Therefore, the number of steps in wafer manufacturing can be reduced compared to methods that require this step. Therefore, wafer manufacturing efficiency can be improved.
  • FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 1.
  • FIG. 4 is a cross-sectional view showing a step subsequent to FIG. 3.
  • FIG. 5 is a sectional view showing a step following FIG. 4.
  • FIG. 6 is an enlarged sectional view showing the process shown in FIG. 5.
  • the wafer 1 includes a lower substrate 20 covered with an oxide film 40, and an upper substrate 30 bonded to the lower substrate 20 through the oxide film 40 in the thickness direction of the lower substrate 20.
  • the thickness direction of the lower substrate 20 is also the thickness direction of the upper substrate 30.
  • the thickness direction of the lower substrate 20 and the upper substrate 30 will be simply referred to as the thickness direction.
  • the thickness direction corresponds to the up-down direction.
  • each of the lower substrate 20 and the upper substrate 30 is a silicon substrate.
  • the oxide film 40 contains silicon oxide.
  • the oxide film 40 has an inner film portion 41 sandwiched between the lower substrate 20 and the upper substrate 30 in the thickness direction, and a lower film portion 42 that covers the outer surface of the lower substrate 20.
  • the outer surface of the lower substrate 20 refers to a region of the surface of the lower substrate 20 excluding the bonding region where it is bonded to the upper substrate 30 via the oxide film 40.
  • the lower film portion 42 is a portion of the oxide film 40 that covers the lower substrate 20, excluding the inner film portion 41.
  • the outer surface of the upper substrate 30 is not covered with an oxide film.
  • the outer surface of the upper substrate 30 refers to a region of the surface of the upper substrate 30 excluding the bonding region bonded to the upper substrate 30 via the oxide film 40.
  • FIGS. 1 to 5 A first example of a wafer manufacturing method according to an embodiment of the present invention will be described.
  • the thickness of the oxide film 40 is exaggerated to show the arrangement of the oxide film 40 more clearly.
  • the lower substrate 20 and the upper substrate 30 are shown to have the same thickness in each figure, they may have different thicknesses.
  • a substrate assembly 10 for manufacturing a wafer 1 is prepared.
  • the substrate assembly 10 includes a lower substrate 20 and an upper substrate 30 joined to the lower substrate 20 through an inner film portion 41 of an oxide film 40 in the thickness direction.
  • the oxide film 40 covers each of the lower substrate 20 and the upper substrate 30.
  • the oxide film 40 has an upper film part 43 that covers the outer surface of the upper substrate 30 in addition to an inner film part 41 and a lower film part 42 .
  • the lower substrate 20 and the upper substrate 30 are circular in shape and have the same diameter in a plan view along the thickness direction.
  • a plan view viewed along the thickness direction will simply be referred to as a plan view.
  • the lower substrate 20 and the upper substrate 30 may have shapes other than circular in plan view.
  • the diameter of the lower substrate 20 and the diameter of the upper substrate 30 may be different.
  • the center of the lower substrate 20 and the center of the upper substrate 30 overlap in plan view.
  • the inferior membrane part 42 and the superior membrane part 43 are connected to each other at a connecting part 44 that is the edge of the endothelial membrane part 41.
  • the connecting portion 44 is annular in plan view. That is, the inferior membrane part 42 and the superior membrane part 43 are connected to each other along the entire circumference of the edge of the intimal membrane part 41.
  • the connecting portion 44 has a shape corresponding to the shapes of the lower substrate 20 and the upper substrate 30. For example, if the lower substrate 20 and the upper substrate 30 are polygonal, the connecting portion 44 will be polygonal in plan view. That is, the annular shape is not limited to a circular annular shape.
  • the upper substrate 30 has an upper protrusion 31 that protrudes outward from the annular connecting portion 44 in plan view.
  • the upper protrusion 31 corresponds to the "protrusion" in the present invention.
  • the upper protrusion 31 has a shape that bulges in a direction perpendicular to the thickness direction.
  • the lower substrate 20 has a lower protrusion 21 that protrudes outward from the annular connecting portion 44 in plan view.
  • the lower protrusion 21 has a shape that bulges in a direction perpendicular to the thickness direction.
  • each of the lower membrane part 42 and the upper membrane part 43 is constant or approximately constant, but may not be constant or approximately constant.
  • each of the surface 42a of the lower film part 42 and the surface 43a of the upper film part 43 is the outer surface of the lower substrate 20 or the upper substrate. It has a shape along the outer surface of 30.
  • the surface 42a of the lower membrane portion 42 has a downward region 42b having a downward component in the thickness direction, and an upward region 42c having an upward component.
  • the surface 43a of the upper membrane portion 43 has a downward region 43b having a downward component in the thickness direction and an upward region 43c having an upward component.
  • the downward region 42b of the lower membrane part 42 is an area below the most protruding part of the lower protrusion part 21.
  • the upward region 42c of the lower membrane portion 42 is a region above the most protruding portion of the lower protrusion 21.
  • the downward region 43b of the upper membrane part 43 is an area below the most protruding part of the upper protrusion part 31.
  • the upward region 43c of the upper membrane portion 43 is a region above the most protruding portion of the upper protrusion portion 31.
  • the surface 42a of the lower membrane part 42 has an overlapping region that overlaps with the upper membrane part 43 and connects to the downward region 43b of the upper membrane part 43 in plan view.
  • the entire surface 42a of the lower membrane portion 42 is an overlapping region.
  • Such a substrate assembly 10 can be produced, for example, as follows. First, an oxide film 40 is formed on at least one surface of the lower substrate 20 and the upper substrate 30.
  • the oxide film 40 can be formed, for example, by dry oxidation, wet oxidation, thermal oxidation using steam oxidation, sputtering, or chemical vapor deposition (CVD). This embodiment will be described assuming that the oxide film 40 is formed only on the surface of the lower substrate 20.
  • the lower substrate 20 and the upper substrate 30 are heat-treated and bonded while being overlapped in the thickness direction with the oxide film 40 interposed therebetween. At this time, when the heat treatment is performed in an atmosphere containing oxygen, an oxide film 40 is also formed on the outer surface of the upper substrate 30. As a result, the substrate assembly 10 as shown in FIG. 3 is completed.
  • an annular covering part 50 is formed that covers at least a part of the lower film part 42, a part of the upper film part 43, and the annular connecting part 44. be done.
  • the covering section 50 straddles all parts of the connecting section 44 in the thickness direction.
  • the covering portion 50 covers the upward region 42c of the lower membrane portion 42 and the downward region 43b of the upper membrane portion 43.
  • Such a covering portion 50 can be formed by, for example, a coating process, an exposure process, and a development process described below.
  • a photosensitive resin is applied to at least the downward region 43b of the surface 43a of the upper film portion 43 and at least the upward region 42c of the surface 42a of the lower film portion 42.
  • the photosensitive resin undergoes a chemical or structural change due to light having a specific wavelength, thereby becoming soluble in the developer described below.
  • a positive photoresist such as OFPR-5000 manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used.
  • the photosensitive resin is applied, for example, by spin coating.
  • the photosensitive resin is poured onto the upward region 43c of the upper film portion 43, and as the substrate assembly 10 rotates, the photosensitive resin is poured onto the entire surface 43a of the upper film portion 43 and the upward region of the lower film portion 42. It is spread over 42c.
  • the photosensitive resin is scattered away from the lower film part 42 due to the centrifugal force caused by the rotation of the substrate assembly 10, it is not applied to the downward region 42b of the lower film part 42.
  • the method for applying the photosensitive resin is as follows, if the photosensitive resin can be applied to at least the portion where the covering portion 50 is formed among the surface 42a of the lower film portion 42 and the surface 43a of the upper film portion 43. It is not limited to spin coating.
  • the photosensitive resin may be applied to the entire surface 42a of the lower film part 42 and the entire surface 43a of the upper film part 43 by immersing the entire substrate assembly 10 in the photosensitive resin.
  • the photosensitive resin may be spray applied.
  • the substrate assembly 10 is irradiated downward along the thickness direction with light that exposes the photosensitive resin, as shown by arrows in FIG.
  • the photosensitive resin (indicated by broken lines in FIG. 4) applied to the upwardly facing region 43c of the upper film portion 43 is exposed to the downwardly irradiated light and becomes photosensitive.
  • the photosensitive resin applied to the downward area 43b of the upper film part 43 and the downward area 42b of the lower film part 42 is not exposed to light and is not photosensitive.
  • the photosensitive resin applied to the overlapping region of the upward region 42c of the lower film portion 42 is not exposed to light and is not exposed to light.
  • the photosensitive resin applied to the non-overlapping area is exposed to light and becomes photosensitive.
  • the portion of the applied photosensitive resin that constitutes the covering portion 50 may be masked to more reliably prevent exposure to light and solubilization.
  • the exposed portion of the applied photosensitive resin is dissolved by a developer.
  • the developer dissolves the exposed parts of the photosensitive resin, but does not dissolve the unexposed parts.
  • the developer is, for example, an alkaline developer.
  • the photosensitive resin (indicated by a broken line in FIG. 4) applied to the upward region 43c of the upper film portion 43 is dissolved in the developer and removed from the substrate assembly 10. As a result, the upward region 43c of the upper membrane portion 43 is exposed to the outside of the covering portion 50.
  • a covering portion 50 is formed by the portion of the applied photosensitive resin that is not exposed to light.
  • the etching process is etched using an etching solution that dissolves the oxide film 40.
  • the etching solution has a corrosive effect on the oxide film 40.
  • the etching solution is diluted hydrofluoric acid (DHF) or buffered hydrofluoric acid (BHF).
  • Etching of the upper film portion 43 is performed, for example, by spin etching.
  • the etching solution is poured into the upward region 43c of the upper film portion 43, and spreads and acts on the upward region 43c as the substrate assembly 10 rotates.
  • a gap D is formed between the upper substrate 30 and the covering part 50 by dissolving the upper film part 43, as shown in FIG. At least a portion of the etching solution that has spread along the outer surface of the upper substrate 30 enters the gap D. The etching solution that has entered the gap D continues along the gap D and forms the bottom of the gap D without leaving the outer surface of the upper substrate 30 and dripping or being scattered due to the rotation of the substrate assembly 10. The upper membrane portion 43 is dissolved.
  • the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved. I can do it.
  • the remaining portion of the upper film portion 43 may later come off from the substrate assembly 10 and become fragments.
  • the fragments may interfere with subsequent processing such as grinding or polishing on the upper substrate 30, or may cause damage such as cracks to the upper substrate 30.
  • the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved, so that the possibility of generation of fragments of the upper film portion 43 can be reduced. can. Therefore, problems in processing such as grinding and polishing of the upper substrate 30 and damage to the upper substrate 30 can be suppressed.
  • the etching solution that has entered the gap D does not contact the lower film part 42 until the upper film part 43 between the upper substrate 30 and the covering part 50 is etched. That is, etching of the lower film part 42 is not started until the upper film part 43 is etched. Therefore, damage to the lower film portion 42 due to etching of the lower film portion 42 together with the upper film portion 43 can be suppressed.
  • the method of etching the upper film portion 43 is not limited to spin etching.
  • immersion etching may be performed in which the entire substrate assembly 10 is immersed in an etching solution.
  • the covering portion 50 is removed from the substrate assembly 10, and the wafer 1 is manufactured.
  • the covering portion 50 is removed by immersion in a remover, ashing, or the like.
  • the upper substrate 30 may be processed depending on the use of the wafer 1 after the above-mentioned covering portion removal step.
  • the upper substrate 30 may be ground downward along the thickness direction using a grinding wheel.
  • wear of the grinding wheel due to grinding of the upper film portion 43, which is harder than the upper substrate 30, can be suppressed. can.
  • fragments of the upper film portion 43 are less likely to occur during grinding, it is possible to reduce the possibility that the processing of the upper substrate 30 is hindered or the upper substrate 30 is damaged due to the fragments.
  • FIG. 7 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to the III-III line in FIG. 1.
  • FIG. 8 is a sectional view showing a step following FIG. 7.
  • the second example of the wafer manufacturing method differs from the first example of the wafer manufacturing method in that the above-mentioned exposure step and development step are not required in the covering portion forming step. Therefore, the resin constituting the covering portion 50 is not limited to photosensitive resin, and for example, hydrofluoric acid-resistant heat-shrinkable resin can be used. Note that in the second example of the wafer manufacturing method, descriptions of steps similar to those in the first example will be omitted below.
  • the substrate assembly 10 is placed in an upside-down position, that is, the lower substrate 20 is positioned above the upper substrate 30. Note that, in the following description, the names of each of the above-mentioned parts will be used regardless of the orientation of the substrate assembly 10.
  • the resin is spin-coated onto the substrate assembly 10. More specifically, the resin is poured into the downward region 42b of the lower film part 42, and as the substrate assembly 10 rotates, the resin is poured onto the entire surface 42a of the lower film part 42 and the downward region 43b of the upper film part 43. It can be spread. On the other hand, the resin is scattered away from the upper film part 43 due to the centrifugal force caused by the rotation of the substrate assembly 10, so that the resin is not applied to the upward region 43c of the upper film part 43. The applied resin is cured to form the covering portion 50.
  • the upper film portion 43 is etched, as shown in FIG.
  • the substrate assembly 10 is shown in its original position, ie, in the same position as the substrate assembly 10 shown in FIG. Since the entire surface 42a of the lower film part 42 is covered with the covering part 50, the upper film part 43 can be etched by dip etching.
  • the etching method for the upper film portion 43 is not particularly limited, and may be, for example, the above-mentioned spin etching.
  • the etching solution reaches a portion of the lower film part 42 near the upper film part 43, and at least a part of the lower film part 42 is etched together with the upper film part 43. There is a risk that this may occur.
  • at least a portion of the lower film portion 42 is covered with the covering portion 50 during the etching process, so that it is protected from the etching solution.
  • the covering portion 50 straddles the connecting portion 44 between the lower membrane portion 42 and the upper membrane portion 43 in the thickness direction.
  • the above-mentioned nearby portion of the lower film portion 42 is more reliably protected from the etching solution. Therefore, damage to the lower film part 42 due to etching of the lower film part 42 together with the upper film part 43 can be suppressed.
  • the thickness of the lower film portion 42 will vary greatly, and interference fringes will likely occur on the surface of the lower film portion 42.
  • the interference fringes may cause erroneous recognition and malfunction of a device that recognizes the outer shape of the wafer 1 and handles or processes the wafer 1.
  • at least a portion of the lower film portion 42 is protected from the etching solution, so that it is possible to suppress the variation in the thickness of the lower film portion 42 from increasing. This makes it difficult for interference fringes to occur on the surface of the lower membrane part 42, so that the above-mentioned erroneous recognition and malfunction can be suppressed.
  • the variation in the thickness of the lower film portion 42 is small, so that the wafer 1 can be patterned using the lower film portion 42.
  • the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50. In comparison, defects in the lower film portion 42 due to etching can be further suppressed.
  • the manufacturing efficiency of the wafer 1 can be improved compared to a method using an etching method such as spin etching in which the substrate assembly 10 is processed one by one.
  • the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly 10.
  • the photosensitive resin applied to the upward region 43c of the upper film portion 43 is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be exposed from the covering portion 50 and brought into contact with the etching solution.
  • the photosensitive material applied to the downward facing area 43b of the upper film part 43 and the overlapping area of the lower film part 42 is The resin remains unsensitized and unsolubilized.
  • the covering portion 50 spanning the connection portion 44 between the lower film portion 42 and the upper film portion 43 in the thickness direction can be formed without using a coating method that requires high precision.
  • the upper film portion 43 is spin-etched.
  • the covering portion 50 can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer 1 can be reduced.
  • the photosensitive resin can also be applied to the downward region 42b of the lower film portion 42.
  • the photosensitive resin applied to the downward region 42b of the lower film portion 42 is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized.
  • the downward region 42b of the lower film portion 42 is covered by the covering portion 50, so that the lower film portion 42 is etched together with the upper film portion 43, compared to a method in which the downward region 42b is not covered by the covering portion 50. It is possible to suppress the loss of the inferior membrane portion 42 due to this.
  • the photosensitive resin applied to the surface 42a of the lower film part 42 is not exposed to the above-mentioned light, the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50.
  • immersion etching in which the substrate assembly 10 is immersed in an etching solution can be performed. Therefore, the manufacturing efficiency of the wafer 1 can be improved compared to the case where an etching method such as spin etching is employed in which the substrate assembly 10 is processed one by one.
  • the resin is poured onto the lower film part 42 and spin-coated, it is difficult for the resin to reach the upward region 43c of the upper film part 43. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be more reliably exposed from the covering portion 50 compared to other coating methods. Therefore, the upper film portion 43 can be etched more reliably.
  • the step of removing the resin from the surface 43a of the upper film portion 43 to expose the upper film portion 43 for example, exposing and removing the photosensitive resin. Therefore, the number of steps in manufacturing the wafer 1 can be reduced compared to a method that requires this step. Therefore, the manufacturing efficiency of the wafer 1 can be improved.
  • each of the lower substrate 20 and the upper substrate 30 is a silicon substrate, but the present invention is not limited thereto.
  • Each of the lower substrate 20 and the upper substrate 30 may be made of a material capable of forming an oxide film 40 on their surfaces.
  • each of the lower substrate 20 and the upper substrate 30 may be a silicon substrate doped with impurities such as phosphorus or boron.
  • the upper substrate 30 and the lower substrate 20 covered with the oxide film 40 are bonded in the preparation process, but the present invention is not limited thereto.
  • the substrate assembly 10 may be fabricated by bonding a lower substrate 20 and an upper substrate 30 covered with an oxide film 40. may also be produced by joining them together.
  • the present invention can suppress defects in the oxide film on the lower substrate, it is useful for a method of manufacturing a wafer in which a plurality of substrates are bonded.
  • Substrate assembly 20 Lower substrate 30 Upper substrate 31 Upper protrusion 40 Oxide film 42 Lower film portion 42a Surface 43 Upper film portion 43a Surface 43b Downward region 44 Connection portion 50 Covering portion

Abstract

L'invention concerne un procédé de fabrication d'une tranche dans lequel des défauts dans un film d'oxyde sur un substrat inférieur sont supprimés. Le procédé de fabrication d'une tranche selon la présente invention comprend une étape de préparation, une étape de formation de revêtement et une étape de gravure. Dans l'étape de préparation, un ensemble substrat, qui comprend un substrat inférieur, un substrat supérieur adjacent au substrat inférieur dans le sens de l'épaisseur du substrat inférieur, et un film d'oxyde, est préparé. Le film d'oxyde a une partie de film interne entre le substrat inférieur et le substrat supérieur, une partie de film inférieure recouvrant la surface externe du substrat inférieur, et une partie de film supérieure recouvrant la surface externe du substrat supérieur et reliée à la partie de film inférieure. Dans l'étape de formation de revêtement, un revêtement annulaire est formé pour recouvrir au moins une partie de la partie de film inférieure, une partie de la partie de film supérieure, et une partie de liaison annulaire entre la partie de film inférieure et la partie de film supérieure. Dans l'étape de gravure, la partie de film supérieure est gravée par un agent de gravure qui dissout le film d'oxyde.
PCT/JP2023/011360 2022-03-25 2023-03-23 Procédé de fabrication de tranche WO2023182393A1 (fr)

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JP2022050140 2022-03-25

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202024A (ja) * 1989-01-31 1990-08-10 Fujitsu Ltd 貼り合わせ基板の薄膜化方法
JPH1167701A (ja) * 1997-08-22 1999-03-09 Sumitomo Metal Ind Ltd 貼り合わせｓｏｉ基板の製造方法及びこれに用いる保護剤塗布装置
JP2004022838A (ja) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
JP2006100406A (ja) * 2004-09-28 2006-04-13 Toshiba Ceramics Co Ltd Ｓｏｉウェーハの製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202024A (ja) * 1989-01-31 1990-08-10 Fujitsu Ltd 貼り合わせ基板の薄膜化方法
JPH1167701A (ja) * 1997-08-22 1999-03-09 Sumitomo Metal Ind Ltd 貼り合わせｓｏｉ基板の製造方法及びこれに用いる保護剤塗布装置
JP2004022838A (ja) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp 貼り合わせｓｏｉ基板およびその製造方法
JP2006100406A (ja) * 2004-09-28 2006-04-13 Toshiba Ceramics Co Ltd Ｓｏｉウェーハの製造方法

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