WO2023182393A1 - Method for manufacturing wafer - Google Patents

Method for manufacturing wafer Download PDF

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Publication number
WO2023182393A1
WO2023182393A1 PCT/JP2023/011360 JP2023011360W WO2023182393A1 WO 2023182393 A1 WO2023182393 A1 WO 2023182393A1 JP 2023011360 W JP2023011360 W JP 2023011360W WO 2023182393 A1 WO2023182393 A1 WO 2023182393A1
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Prior art keywords
substrate
film
covering
manufacturing
film portion
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PCT/JP2023/011360
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French (fr)
Japanese (ja)
Inventor
仁明 松森
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株式会社村田製作所
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Publication of WO2023182393A1 publication Critical patent/WO2023182393A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Definitions

  • the present invention relates to a method for manufacturing a wafer comprising two stacked substrates.
  • Patent Document 1 Conventionally, as a method for manufacturing this type of wafer, the method described in Patent Document 1, for example, is known.
  • a base wafer hereinafter referred to as a lower substrate
  • a bond wafer hereinafter referred to as an upper substrate
  • An oxide film is formed on the surface of the upper substrate.
  • the lower substrate and the upper substrate are bonded together by heat treatment to form a bonded wafer.
  • the heat treatment is performed in an atmosphere containing oxygen, an oxide film is also formed on the surface of the lower substrate.
  • a bonded wafer in which an oxide film is also formed on the surface of the lower substrate will be referred to as a substrate assembly.
  • the outer peripheral portion of the upper substrate is ground in the thickness direction of the wafer to a depth that does not reach the lower substrate.
  • the portion of the oxide film that was formed on the ground portion of the upper substrate is removed.
  • the unground portion of the outer peripheral portion of the upper substrate is etched by an etching solution that corrodes the substrate.
  • the oxide film on the unground portion remains on the wafer without being etched.
  • the remaining oxide film on the unground portion is etched away by an etching solution that corrodes the oxide film.
  • an object of the present invention is to solve the above problems and to provide a method for manufacturing a wafer in which defects in the oxide film on the lower substrate are suppressed.
  • a wafer manufacturing method includes the following steps: a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part; a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; , an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film; including.
  • the present invention it is possible to manufacture a wafer in which defects in the oxide film on the lower substrate are suppressed.
  • FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG. 1; A cross-sectional view taken along the III-III line in FIG. 1.
  • FIG. 4 is a cross-sectional view showing a step following FIG. 3;
  • FIG. 5 is a sectional view showing a step following FIG. 4;
  • FIG. 6 is an enlarged cross-sectional view showing the process shown in FIG. 5.
  • FIG. 2 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to line III-III in FIG. 1;
  • FIG. 8 is a sectional view showing a step following FIG. 7;
  • a method for manufacturing a wafer includes: a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part; a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; , an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film; including.
  • the etching solution When the upper film part of the oxide film is etched, there is a risk that the etching solution will reach a portion of the lower film part near the upper film part, and at least a part of the lower film part will be etched together with the upper film part.
  • the etching solution When the upper film part of the oxide film is etched, there is a risk that the etching solution will reach a portion of the lower film part near the upper film part, and at least a part of the lower film part will be etched together with the upper film part.
  • at least a portion of the lower film portion is covered with the covering portion during the etching process, so that it is protected from the etching solution.
  • the covering portion straddles the connecting portion between the lower membrane portion and the upper membrane portion in the thickness direction.
  • the above-mentioned nearby portion of the lower film portion is more reliably protected from the etching solution. Therefore, damage to the lower film portion due to etching of the lower film portion together with the upper film portion can be suppressed.
  • the covering portion may cover the entire surface of the lower film portion.
  • the entire surface of the lower film part is protected from the etching solution by the covering part, so compared to a method in which the covering part covers only a part of the surface of the lower film part, the lower film part is Defects caused by etching can be further suppressed.
  • the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction.
  • the surface of the upper membrane portion may have a downward region having a downward component.
  • the surface of the lower membrane portion may have an overlapping region that overlaps with the upper membrane portion and connects to a downward region of the upper membrane portion when viewed along the thickness direction.
  • the covering portion forming step includes a coating step in which a photosensitive resin that becomes soluble in a developer upon exposure to light is applied across the overlapping region of the lower film portion and the downward region of the upper film portion; an exposure step in which the substrate assembly is irradiated with light that exposes the photosensitive resin downward along the thickness direction; and the exposed portion of the photosensitive resin is dissolved by a developer, and the covered portion is removed. It may also include a developing step of forming the image.
  • the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly.
  • the photosensitive resin coated on the upward region of the surface of the upper film portion having upward components is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion and brought into contact with the etching solution.
  • the photosensitive resin applied to the downward facing area of the upper film part and the overlapping area of the lower film part is exposed to light and Remains without solubilization.
  • the photosensitive resin may be poured onto the upper film part and spin-coated onto the entire surface of the upper film part and an overlapping area of the lower film part.
  • the upper film portion may be spin-etched from above.
  • the upper film portion is spin-etched.
  • the etching solution since it is difficult for the etching solution to reach the downward region of the surface of the lower film portion that has a downward component, there is little need to form a covering portion on the downward region of the lower film portion. Therefore, compared to a method in which the upper film portion is etched by a method other than spin etching, the covering portion can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer can be reduced.
  • the substrate assembly may be immersed in the photosensitive resin.
  • the photosensitive resin can also be applied to the downward facing region of the lower film portion.
  • the photosensitive resin applied to the downward region of the lower film portion is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized.
  • the downward area of the lower film part is covered by the covering part, so compared to a method in which the downward facing area is not covered by the covering part, the lower film part is etched together with the upper film part. It is possible to suppress the loss of.
  • the entire surface of the lower film part is protected from the etching solution by the covering part.
  • immersion etching in which the substrate assembly is immersed in an etching solution can be performed. Therefore, wafer manufacturing efficiency can be improved compared to the case where an etching method such as spin etching is employed in which substrate assemblies are processed one by one.
  • the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction.
  • the surface of the upper membrane portion may have a downward region having a downward component.
  • a resin constituting the covering portion may be poured onto the lower film portion and spin-coated onto the entire surface of the lower film portion and a downward region of the upper film portion.
  • the resin is poured onto the lower film part and spin-coated, it is difficult for the resin to reach the upward region of the upper film part. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion more reliably than with other coating methods. Therefore, the upper film portion can be etched more reliably.
  • the step of removing the resin from the surface of the upper film portion to expose the upper film portion for example, exposing and removing the photosensitive resin. Therefore, the number of steps in wafer manufacturing can be reduced compared to methods that require this step. Therefore, wafer manufacturing efficiency can be improved.
  • FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG.
  • FIG. 3 is a sectional view taken along line III-III in FIG. 1.
  • FIG. 4 is a cross-sectional view showing a step subsequent to FIG. 3.
  • FIG. 5 is a sectional view showing a step following FIG. 4.
  • FIG. 6 is an enlarged sectional view showing the process shown in FIG. 5.
  • the wafer 1 includes a lower substrate 20 covered with an oxide film 40, and an upper substrate 30 bonded to the lower substrate 20 through the oxide film 40 in the thickness direction of the lower substrate 20.
  • the thickness direction of the lower substrate 20 is also the thickness direction of the upper substrate 30.
  • the thickness direction of the lower substrate 20 and the upper substrate 30 will be simply referred to as the thickness direction.
  • the thickness direction corresponds to the up-down direction.
  • each of the lower substrate 20 and the upper substrate 30 is a silicon substrate.
  • the oxide film 40 contains silicon oxide.
  • the oxide film 40 has an inner film portion 41 sandwiched between the lower substrate 20 and the upper substrate 30 in the thickness direction, and a lower film portion 42 that covers the outer surface of the lower substrate 20.
  • the outer surface of the lower substrate 20 refers to a region of the surface of the lower substrate 20 excluding the bonding region where it is bonded to the upper substrate 30 via the oxide film 40.
  • the lower film portion 42 is a portion of the oxide film 40 that covers the lower substrate 20, excluding the inner film portion 41.
  • the outer surface of the upper substrate 30 is not covered with an oxide film.
  • the outer surface of the upper substrate 30 refers to a region of the surface of the upper substrate 30 excluding the bonding region bonded to the upper substrate 30 via the oxide film 40.
  • FIGS. 1 to 5 A first example of a wafer manufacturing method according to an embodiment of the present invention will be described.
  • the thickness of the oxide film 40 is exaggerated to show the arrangement of the oxide film 40 more clearly.
  • the lower substrate 20 and the upper substrate 30 are shown to have the same thickness in each figure, they may have different thicknesses.
  • a substrate assembly 10 for manufacturing a wafer 1 is prepared.
  • the substrate assembly 10 includes a lower substrate 20 and an upper substrate 30 joined to the lower substrate 20 through an inner film portion 41 of an oxide film 40 in the thickness direction.
  • the oxide film 40 covers each of the lower substrate 20 and the upper substrate 30.
  • the oxide film 40 has an upper film part 43 that covers the outer surface of the upper substrate 30 in addition to an inner film part 41 and a lower film part 42 .
  • the lower substrate 20 and the upper substrate 30 are circular in shape and have the same diameter in a plan view along the thickness direction.
  • a plan view viewed along the thickness direction will simply be referred to as a plan view.
  • the lower substrate 20 and the upper substrate 30 may have shapes other than circular in plan view.
  • the diameter of the lower substrate 20 and the diameter of the upper substrate 30 may be different.
  • the center of the lower substrate 20 and the center of the upper substrate 30 overlap in plan view.
  • the inferior membrane part 42 and the superior membrane part 43 are connected to each other at a connecting part 44 that is the edge of the endothelial membrane part 41.
  • the connecting portion 44 is annular in plan view. That is, the inferior membrane part 42 and the superior membrane part 43 are connected to each other along the entire circumference of the edge of the intimal membrane part 41.
  • the connecting portion 44 has a shape corresponding to the shapes of the lower substrate 20 and the upper substrate 30. For example, if the lower substrate 20 and the upper substrate 30 are polygonal, the connecting portion 44 will be polygonal in plan view. That is, the annular shape is not limited to a circular annular shape.
  • the upper substrate 30 has an upper protrusion 31 that protrudes outward from the annular connecting portion 44 in plan view.
  • the upper protrusion 31 corresponds to the "protrusion" in the present invention.
  • the upper protrusion 31 has a shape that bulges in a direction perpendicular to the thickness direction.
  • the lower substrate 20 has a lower protrusion 21 that protrudes outward from the annular connecting portion 44 in plan view.
  • the lower protrusion 21 has a shape that bulges in a direction perpendicular to the thickness direction.
  • each of the lower membrane part 42 and the upper membrane part 43 is constant or approximately constant, but may not be constant or approximately constant.
  • each of the surface 42a of the lower film part 42 and the surface 43a of the upper film part 43 is the outer surface of the lower substrate 20 or the upper substrate. It has a shape along the outer surface of 30.
  • the surface 42a of the lower membrane portion 42 has a downward region 42b having a downward component in the thickness direction, and an upward region 42c having an upward component.
  • the surface 43a of the upper membrane portion 43 has a downward region 43b having a downward component in the thickness direction and an upward region 43c having an upward component.
  • the downward region 42b of the lower membrane part 42 is an area below the most protruding part of the lower protrusion part 21.
  • the upward region 42c of the lower membrane portion 42 is a region above the most protruding portion of the lower protrusion 21.
  • the downward region 43b of the upper membrane part 43 is an area below the most protruding part of the upper protrusion part 31.
  • the upward region 43c of the upper membrane portion 43 is a region above the most protruding portion of the upper protrusion portion 31.
  • the surface 42a of the lower membrane part 42 has an overlapping region that overlaps with the upper membrane part 43 and connects to the downward region 43b of the upper membrane part 43 in plan view.
  • the entire surface 42a of the lower membrane portion 42 is an overlapping region.
  • Such a substrate assembly 10 can be produced, for example, as follows. First, an oxide film 40 is formed on at least one surface of the lower substrate 20 and the upper substrate 30.
  • the oxide film 40 can be formed, for example, by dry oxidation, wet oxidation, thermal oxidation using steam oxidation, sputtering, or chemical vapor deposition (CVD). This embodiment will be described assuming that the oxide film 40 is formed only on the surface of the lower substrate 20.
  • the lower substrate 20 and the upper substrate 30 are heat-treated and bonded while being overlapped in the thickness direction with the oxide film 40 interposed therebetween. At this time, when the heat treatment is performed in an atmosphere containing oxygen, an oxide film 40 is also formed on the outer surface of the upper substrate 30. As a result, the substrate assembly 10 as shown in FIG. 3 is completed.
  • an annular covering part 50 is formed that covers at least a part of the lower film part 42, a part of the upper film part 43, and the annular connecting part 44. be done.
  • the covering section 50 straddles all parts of the connecting section 44 in the thickness direction.
  • the covering portion 50 covers the upward region 42c of the lower membrane portion 42 and the downward region 43b of the upper membrane portion 43.
  • Such a covering portion 50 can be formed by, for example, a coating process, an exposure process, and a development process described below.
  • a photosensitive resin is applied to at least the downward region 43b of the surface 43a of the upper film portion 43 and at least the upward region 42c of the surface 42a of the lower film portion 42.
  • the photosensitive resin undergoes a chemical or structural change due to light having a specific wavelength, thereby becoming soluble in the developer described below.
  • a positive photoresist such as OFPR-5000 manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used.
  • the photosensitive resin is applied, for example, by spin coating.
  • the photosensitive resin is poured onto the upward region 43c of the upper film portion 43, and as the substrate assembly 10 rotates, the photosensitive resin is poured onto the entire surface 43a of the upper film portion 43 and the upward region of the lower film portion 42. It is spread over 42c.
  • the photosensitive resin is scattered away from the lower film part 42 due to the centrifugal force caused by the rotation of the substrate assembly 10, it is not applied to the downward region 42b of the lower film part 42.
  • the method for applying the photosensitive resin is as follows, if the photosensitive resin can be applied to at least the portion where the covering portion 50 is formed among the surface 42a of the lower film portion 42 and the surface 43a of the upper film portion 43. It is not limited to spin coating.
  • the photosensitive resin may be applied to the entire surface 42a of the lower film part 42 and the entire surface 43a of the upper film part 43 by immersing the entire substrate assembly 10 in the photosensitive resin.
  • the photosensitive resin may be spray applied.
  • the substrate assembly 10 is irradiated downward along the thickness direction with light that exposes the photosensitive resin, as shown by arrows in FIG.
  • the photosensitive resin (indicated by broken lines in FIG. 4) applied to the upwardly facing region 43c of the upper film portion 43 is exposed to the downwardly irradiated light and becomes photosensitive.
  • the photosensitive resin applied to the downward area 43b of the upper film part 43 and the downward area 42b of the lower film part 42 is not exposed to light and is not photosensitive.
  • the photosensitive resin applied to the overlapping region of the upward region 42c of the lower film portion 42 is not exposed to light and is not exposed to light.
  • the photosensitive resin applied to the non-overlapping area is exposed to light and becomes photosensitive.
  • the portion of the applied photosensitive resin that constitutes the covering portion 50 may be masked to more reliably prevent exposure to light and solubilization.
  • the exposed portion of the applied photosensitive resin is dissolved by a developer.
  • the developer dissolves the exposed parts of the photosensitive resin, but does not dissolve the unexposed parts.
  • the developer is, for example, an alkaline developer.
  • the photosensitive resin (indicated by a broken line in FIG. 4) applied to the upward region 43c of the upper film portion 43 is dissolved in the developer and removed from the substrate assembly 10. As a result, the upward region 43c of the upper membrane portion 43 is exposed to the outside of the covering portion 50.
  • a covering portion 50 is formed by the portion of the applied photosensitive resin that is not exposed to light.
  • the etching process is etched using an etching solution that dissolves the oxide film 40.
  • the etching solution has a corrosive effect on the oxide film 40.
  • the etching solution is diluted hydrofluoric acid (DHF) or buffered hydrofluoric acid (BHF).
  • Etching of the upper film portion 43 is performed, for example, by spin etching.
  • the etching solution is poured into the upward region 43c of the upper film portion 43, and spreads and acts on the upward region 43c as the substrate assembly 10 rotates.
  • a gap D is formed between the upper substrate 30 and the covering part 50 by dissolving the upper film part 43, as shown in FIG. At least a portion of the etching solution that has spread along the outer surface of the upper substrate 30 enters the gap D. The etching solution that has entered the gap D continues along the gap D and forms the bottom of the gap D without leaving the outer surface of the upper substrate 30 and dripping or being scattered due to the rotation of the substrate assembly 10. The upper membrane portion 43 is dissolved.
  • the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved. I can do it.
  • the remaining portion of the upper film portion 43 may later come off from the substrate assembly 10 and become fragments.
  • the fragments may interfere with subsequent processing such as grinding or polishing on the upper substrate 30, or may cause damage such as cracks to the upper substrate 30.
  • the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved, so that the possibility of generation of fragments of the upper film portion 43 can be reduced. can. Therefore, problems in processing such as grinding and polishing of the upper substrate 30 and damage to the upper substrate 30 can be suppressed.
  • the etching solution that has entered the gap D does not contact the lower film part 42 until the upper film part 43 between the upper substrate 30 and the covering part 50 is etched. That is, etching of the lower film part 42 is not started until the upper film part 43 is etched. Therefore, damage to the lower film portion 42 due to etching of the lower film portion 42 together with the upper film portion 43 can be suppressed.
  • the method of etching the upper film portion 43 is not limited to spin etching.
  • immersion etching may be performed in which the entire substrate assembly 10 is immersed in an etching solution.
  • the covering portion 50 is removed from the substrate assembly 10, and the wafer 1 is manufactured.
  • the covering portion 50 is removed by immersion in a remover, ashing, or the like.
  • the upper substrate 30 may be processed depending on the use of the wafer 1 after the above-mentioned covering portion removal step.
  • the upper substrate 30 may be ground downward along the thickness direction using a grinding wheel.
  • wear of the grinding wheel due to grinding of the upper film portion 43, which is harder than the upper substrate 30, can be suppressed. can.
  • fragments of the upper film portion 43 are less likely to occur during grinding, it is possible to reduce the possibility that the processing of the upper substrate 30 is hindered or the upper substrate 30 is damaged due to the fragments.
  • FIG. 7 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to the III-III line in FIG. 1.
  • FIG. 8 is a sectional view showing a step following FIG. 7.
  • the second example of the wafer manufacturing method differs from the first example of the wafer manufacturing method in that the above-mentioned exposure step and development step are not required in the covering portion forming step. Therefore, the resin constituting the covering portion 50 is not limited to photosensitive resin, and for example, hydrofluoric acid-resistant heat-shrinkable resin can be used. Note that in the second example of the wafer manufacturing method, descriptions of steps similar to those in the first example will be omitted below.
  • the substrate assembly 10 is placed in an upside-down position, that is, the lower substrate 20 is positioned above the upper substrate 30. Note that, in the following description, the names of each of the above-mentioned parts will be used regardless of the orientation of the substrate assembly 10.
  • the resin is spin-coated onto the substrate assembly 10. More specifically, the resin is poured into the downward region 42b of the lower film part 42, and as the substrate assembly 10 rotates, the resin is poured onto the entire surface 42a of the lower film part 42 and the downward region 43b of the upper film part 43. It can be spread. On the other hand, the resin is scattered away from the upper film part 43 due to the centrifugal force caused by the rotation of the substrate assembly 10, so that the resin is not applied to the upward region 43c of the upper film part 43. The applied resin is cured to form the covering portion 50.
  • the upper film portion 43 is etched, as shown in FIG.
  • the substrate assembly 10 is shown in its original position, ie, in the same position as the substrate assembly 10 shown in FIG. Since the entire surface 42a of the lower film part 42 is covered with the covering part 50, the upper film part 43 can be etched by dip etching.
  • the etching method for the upper film portion 43 is not particularly limited, and may be, for example, the above-mentioned spin etching.
  • the etching solution reaches a portion of the lower film part 42 near the upper film part 43, and at least a part of the lower film part 42 is etched together with the upper film part 43. There is a risk that this may occur.
  • at least a portion of the lower film portion 42 is covered with the covering portion 50 during the etching process, so that it is protected from the etching solution.
  • the covering portion 50 straddles the connecting portion 44 between the lower membrane portion 42 and the upper membrane portion 43 in the thickness direction.
  • the above-mentioned nearby portion of the lower film portion 42 is more reliably protected from the etching solution. Therefore, damage to the lower film part 42 due to etching of the lower film part 42 together with the upper film part 43 can be suppressed.
  • the thickness of the lower film portion 42 will vary greatly, and interference fringes will likely occur on the surface of the lower film portion 42.
  • the interference fringes may cause erroneous recognition and malfunction of a device that recognizes the outer shape of the wafer 1 and handles or processes the wafer 1.
  • at least a portion of the lower film portion 42 is protected from the etching solution, so that it is possible to suppress the variation in the thickness of the lower film portion 42 from increasing. This makes it difficult for interference fringes to occur on the surface of the lower membrane part 42, so that the above-mentioned erroneous recognition and malfunction can be suppressed.
  • the variation in the thickness of the lower film portion 42 is small, so that the wafer 1 can be patterned using the lower film portion 42.
  • the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50. In comparison, defects in the lower film portion 42 due to etching can be further suppressed.
  • the manufacturing efficiency of the wafer 1 can be improved compared to a method using an etching method such as spin etching in which the substrate assembly 10 is processed one by one.
  • the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly 10.
  • the photosensitive resin applied to the upward region 43c of the upper film portion 43 is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be exposed from the covering portion 50 and brought into contact with the etching solution.
  • the photosensitive material applied to the downward facing area 43b of the upper film part 43 and the overlapping area of the lower film part 42 is The resin remains unsensitized and unsolubilized.
  • the covering portion 50 spanning the connection portion 44 between the lower film portion 42 and the upper film portion 43 in the thickness direction can be formed without using a coating method that requires high precision.
  • the upper film portion 43 is spin-etched.
  • the covering portion 50 can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer 1 can be reduced.
  • the photosensitive resin can also be applied to the downward region 42b of the lower film portion 42.
  • the photosensitive resin applied to the downward region 42b of the lower film portion 42 is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized.
  • the downward region 42b of the lower film portion 42 is covered by the covering portion 50, so that the lower film portion 42 is etched together with the upper film portion 43, compared to a method in which the downward region 42b is not covered by the covering portion 50. It is possible to suppress the loss of the inferior membrane portion 42 due to this.
  • the photosensitive resin applied to the surface 42a of the lower film part 42 is not exposed to the above-mentioned light, the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50.
  • immersion etching in which the substrate assembly 10 is immersed in an etching solution can be performed. Therefore, the manufacturing efficiency of the wafer 1 can be improved compared to the case where an etching method such as spin etching is employed in which the substrate assembly 10 is processed one by one.
  • the resin is poured onto the lower film part 42 and spin-coated, it is difficult for the resin to reach the upward region 43c of the upper film part 43. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be more reliably exposed from the covering portion 50 compared to other coating methods. Therefore, the upper film portion 43 can be etched more reliably.
  • the step of removing the resin from the surface 43a of the upper film portion 43 to expose the upper film portion 43 for example, exposing and removing the photosensitive resin. Therefore, the number of steps in manufacturing the wafer 1 can be reduced compared to a method that requires this step. Therefore, the manufacturing efficiency of the wafer 1 can be improved.
  • each of the lower substrate 20 and the upper substrate 30 is a silicon substrate, but the present invention is not limited thereto.
  • Each of the lower substrate 20 and the upper substrate 30 may be made of a material capable of forming an oxide film 40 on their surfaces.
  • each of the lower substrate 20 and the upper substrate 30 may be a silicon substrate doped with impurities such as phosphorus or boron.
  • the upper substrate 30 and the lower substrate 20 covered with the oxide film 40 are bonded in the preparation process, but the present invention is not limited thereto.
  • the substrate assembly 10 may be fabricated by bonding a lower substrate 20 and an upper substrate 30 covered with an oxide film 40. may also be produced by joining them together.
  • the present invention can suppress defects in the oxide film on the lower substrate, it is useful for a method of manufacturing a wafer in which a plurality of substrates are bonded.
  • Substrate assembly 20 Lower substrate 30 Upper substrate 31 Upper protrusion 40 Oxide film 42 Lower film portion 42a Surface 43 Upper film portion 43a Surface 43b Downward region 44 Connection portion 50 Covering portion

Abstract

Provided is a method for manufacturing a wafer in which defects in an oxide film on a lower substrate are suppressed. The method for manufacturing a wafer according to the present invention comprises a preparation step, a coating forming step, and an etching step. In the preparation step, a substrate assembly, which includes a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, and an oxide film, is prepared. The oxide film has an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate, and an upper film portion covering the outer surface of the upper substrate and connected to the lower film portion. In the coating forming step, an annular coating is formed to cover at least a portion of the lower film portion, a portion of the upper film portion, and an annular connection portion between the lower film portion and the upper film portion. In the etching step, the upper film portion is etched by an etchant that dissolves the oxide film.

Description

ウエハの製造方法Wafer manufacturing method
　本発明は、重ねられた２つの基板を備えるウエハの製造方法に関する。 The present invention relates to a method for manufacturing a wafer comprising two stacked substrates.
　従来、この種のウエハの製造方法として、例えば特許文献１に記載のものが知られている。特許文献１に記載の製造方法では、ベースウエハ（以下、下部基板という。）とボンドウエハ（以下、上部基板という。）とが準備される。上部基板の表面には、酸化膜が形成されている。次に、下部基板と上部基板とが熱処理によって接合され、貼り合わせウエハが形成される。熱処理が酸素を含む雰囲気下で行われると、下部基板の表面にも酸化膜が形成される。以下、下部基板の表面にも酸化膜が形成された貼り合わせウエハを基板接合体という。 Conventionally, as a method for manufacturing this type of wafer, the method described in Patent Document 1, for example, is known. In the manufacturing method described in Patent Document 1, a base wafer (hereinafter referred to as a lower substrate) and a bond wafer (hereinafter referred to as an upper substrate) are prepared. An oxide film is formed on the surface of the upper substrate. Next, the lower substrate and the upper substrate are bonded together by heat treatment to form a bonded wafer. When the heat treatment is performed in an atmosphere containing oxygen, an oxide film is also formed on the surface of the lower substrate. Hereinafter, a bonded wafer in which an oxide film is also formed on the surface of the lower substrate will be referred to as a substrate assembly.
　次に、上部基板の外周部が、ウエハの厚み方向に下部基板に到達しない深さまで研削される。このことにより、酸化膜のうち、上部基板の研削された部分に形成されていた部分が除去される。上部基板の外周部のうち研削されなかった未研削部分は、基板を腐食させるエッチング液によってエッチングされる。このとき、未研削部分上の酸化膜は、エッチングされずにウエハに残存する。未研削部分上の残存した酸化膜は、酸化膜を腐食させるエッチング液によってエッチングされる。 Next, the outer peripheral portion of the upper substrate is ground in the thickness direction of the wafer to a depth that does not reach the lower substrate. As a result, the portion of the oxide film that was formed on the ground portion of the upper substrate is removed. The unground portion of the outer peripheral portion of the upper substrate is etched by an etching solution that corrodes the substrate. At this time, the oxide film on the unground portion remains on the wafer without being etched. The remaining oxide film on the unground portion is etched away by an etching solution that corrodes the oxide film.
特開２００６－２７００３９号公報Japanese Patent Application Publication No. 2006-270039
　しかしながら、特許文献１に記載のウエハの製造方法では、未研削部分上の酸化膜がエッチングされるときに、エッチング液が下部基板上の酸化膜のうち上部基板の近傍部分に到達し、下部基板上の酸化膜がエッチングされてしまうおそれがある。下部基板上の酸化膜のエッチングによる欠損を抑制するという観点において、ウエハの製造方法には、未だ改善の余地がある。 However, in the wafer manufacturing method described in Patent Document 1, when the oxide film on the unground part is etched, the etching solution reaches the part of the oxide film on the lower substrate near the upper substrate, and There is a risk that the upper oxide film may be etched. There is still room for improvement in the wafer manufacturing method from the viewpoint of suppressing defects caused by etching of the oxide film on the lower substrate.
　したがって、本発明の目的は、前記の課題を解決することにあって、下部基板上の酸化膜の欠損が抑制されたウエハの製造方法を提供することにある。 Therefore, an object of the present invention is to solve the above problems and to provide a method for manufacturing a wafer in which defects in the oxide film on the lower substrate are suppressed.
　前記の目的を達成するために、本発明の一態様に係るウエハの製造方法は、
　下部基板と、前記下部基板の厚み方向において前記下部基板と隣り合う上部基板と、前記下部基板と前記上部基板との間にある内膜部、前記下部基板の外表面を覆う下膜部、及び前記上部基板の外表面を覆い前記下膜部に接続する上膜部を有する酸化膜とを備えた基板接合体が準備される準備工程と、
　前記下膜部の少なくとも一部と、前記上膜部の一部と、前記下膜部と前記上膜部との環状の接続部とを覆う環状の被覆部が形成される被覆部形成工程と、
　前記上膜部が、前記酸化膜を溶解するエッチング液によってエッチングされるエッチング工程と、
　を含む。 In order to achieve the above object, a wafer manufacturing method according to one embodiment of the present invention includes the following steps:
a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part;
a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; ,
an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film;
including.
　本発明によれば、下部基板上の酸化膜の欠損が抑制されたウエハを製造することができる。 According to the present invention, it is possible to manufacture a wafer in which defects in the oxide film on the lower substrate are suppressed.
本発明の実施形態に係るウエハの製造方法の第１の例を示す平面図。FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention. 本発明の実施形態に係るウエハの製造方法によって製造されるウエハの図１におけるIII－III線に対応する断面図。FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG. 1; 図１におけるIII－III線に沿った断面図。A cross-sectional view taken along the III-III line in FIG. 1. 図３に続く工程を示す断面図。FIG. 4 is a cross-sectional view showing a step following FIG. 3; 図４に続く工程を示す断面図。FIG. 5 is a sectional view showing a step following FIG. 4; 図５に示す工程を示す拡大断面図。FIG. 6 is an enlarged cross-sectional view showing the process shown in FIG. 5. 本発明の実施形態に係るウエハの製造方法の第２の例を示す図であって、図１におけるIII－III線に対応する断面図。FIG. 2 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to line III-III in FIG. 1; 図７に続く工程を示す断面図。FIG. 8 is a sectional view showing a step following FIG. 7;
　本発明の一態様に係るウエハの製造方法は、
　下部基板と、前記下部基板の厚み方向において前記下部基板と隣り合う上部基板と、前記下部基板と前記上部基板との間にある内膜部、前記下部基板の外表面を覆う下膜部、及び前記上部基板の外表面を覆い前記下膜部に接続する上膜部を有する酸化膜とを備えた基板接合体が準備される準備工程と、
　前記下膜部の少なくとも一部と、前記上膜部の一部と、前記下膜部と前記上膜部との環状の接続部とを覆う環状の被覆部が形成される被覆部形成工程と、
　前記上膜部が、前記酸化膜を溶解するエッチング液によってエッチングされるエッチング工程と、
　を含む。 A method for manufacturing a wafer according to one embodiment of the present invention includes:
a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part;
a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; ,
an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film;
including.
　酸化膜の上膜部がエッチングされるとき、下膜部のうち上膜部に対する近傍部分にエッチング液が到達し、下膜部の少なくとも一部が上膜部と共にエッチングされてしまうおそれがある。一方、前記の製造方法によれば、下膜部の少なくとも一部は、エッチング工程において、被覆部によって覆われるので、エッチング液から保護される。 When the upper film part of the oxide film is etched, there is a risk that the etching solution will reach a portion of the lower film part near the upper film part, and at least a part of the lower film part will be etched together with the upper film part. On the other hand, according to the above-mentioned manufacturing method, at least a portion of the lower film portion is covered with the covering portion during the etching process, so that it is protected from the etching solution.
　さらに、前記の製造方法では、被覆部は、下膜部と上膜部との接続部を厚み方向に跨いでいる。このことにより、被覆部が接続部を跨がない方法と比較して、下膜部の前記した近傍部分がエッチング液からより確実に保護される。したがって、下膜部が上膜部と共にエッチングされることによる下膜部の欠損を抑制することができる。 Furthermore, in the above manufacturing method, the covering portion straddles the connecting portion between the lower membrane portion and the upper membrane portion in the thickness direction. As a result, compared to a method in which the covering portion does not straddle the connecting portion, the above-mentioned nearby portion of the lower film portion is more reliably protected from the etching solution. Therefore, damage to the lower film portion due to etching of the lower film portion together with the upper film portion can be suppressed.
　また、前記被覆部は、前記下膜部の表面の全面を覆ってもよい。 Furthermore, the covering portion may cover the entire surface of the lower film portion.
　この製造方法によれば、下膜部の表面の全面が被覆部によってエッチング液から保護されるので、被覆部が下膜部の表面の一部のみを覆う方法と比較して、下膜部のエッチングによる欠損を更に抑制することができる。 According to this manufacturing method, the entire surface of the lower film part is protected from the etching solution by the covering part, so compared to a method in which the covering part covers only a part of the surface of the lower film part, the lower film part is Defects caused by etching can be further suppressed.
　また、前記の製造方法によれば、エッチング工程において、基板接合体がエッチング液に浸漬される浸漬エッチングを行うことができる。このことにより、スピンエッチングなどの基板接合体を１つずつ処理するエッチング手法を採用する方法と比較して、ウエハの製造効率を向上させることができる。 Furthermore, according to the above manufacturing method, in the etching process, immersion etching in which the substrate assembly is immersed in an etching solution can be performed. As a result, wafer manufacturing efficiency can be improved compared to a method that employs an etching method such as spin etching in which substrate assemblies are processed one by one.
　また、前記上部基板は、前記厚み方向に沿って見て前記接続部よりも外側に突出した突出部を有してもよい。前記上膜部の表面は、下向きの成分を有する下向き領域を有してもよい。前記下膜部の表面は、前記厚み方向に沿って見て前記上膜部と重複し且つ前記上膜部の下向き領域に接続する重複領域を有してもよい。前記被覆部形成工程は、感光によって現像液に対して可溶化する感光性樹脂が、前記下膜部の重複領域と前記上膜部の下向き領域とに跨って塗布される塗布工程と、前記感光性樹脂を感光する光が、前記基板接合体に対して前記厚み方向に沿って下向きに照射される露光工程と、前記感光性樹脂のうち感光した部分が現像液によって溶解され、前記被覆部が形成される現像工程と、を含んでもよい。 Furthermore, the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction. The surface of the upper membrane portion may have a downward region having a downward component. The surface of the lower membrane portion may have an overlapping region that overlaps with the upper membrane portion and connects to a downward region of the upper membrane portion when viewed along the thickness direction. The covering portion forming step includes a coating step in which a photosensitive resin that becomes soluble in a developer upon exposure to light is applied across the overlapping region of the lower film portion and the downward region of the upper film portion; an exposure step in which the substrate assembly is irradiated with light that exposes the photosensitive resin downward along the thickness direction; and the exposed portion of the photosensitive resin is dissolved by a developer, and the covered portion is removed. It may also include a developing step of forming the image.
　この製造方法によれば、感光性樹脂を感光する光は、基板接合体に対して下向きに照射される。このことにより、上膜部の表面のうち上向き成分を有する上向き領域に塗布された感光性樹脂は、可溶化されて現像液によって溶解される。よって、エッチング工程において、上膜部の上向き領域を被覆部から露出させて、エッチング液に接触させることができる。 According to this manufacturing method, the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly. As a result, the photosensitive resin coated on the upward region of the surface of the upper film portion having upward components is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion and brought into contact with the etching solution.
　また、この製造方法によれば、上部基板及び上膜部が下向きによって照射された光を遮るため、上膜部の下向き領域及び下膜部の重複領域に塗布された感光性樹脂は、感光及び可溶化せずに残存する。このことにより、下膜部と上膜部との接続部を厚み方向に跨ぐ被覆部を、高い精度を必要とする塗布手法を利用することなく形成することができる。 Further, according to this manufacturing method, since the upper substrate and the upper film part face downward and block the irradiated light, the photosensitive resin applied to the downward facing area of the upper film part and the overlapping area of the lower film part is exposed to light and Remains without solubilization. With this, it is possible to form a covering portion that straddles the connecting portion between the lower film portion and the upper film portion in the thickness direction without using a coating method that requires high precision.
　また、前記塗布工程において、前記感光性樹脂は、前記上膜部に注がれて前記上膜部の表面の全面と前記下膜部の重複領域とにスピンコートされてもよい。前記エッチング工程において、前記上膜部は、上方からスピンエッチングされてもよい。 Furthermore, in the coating step, the photosensitive resin may be poured onto the upper film part and spin-coated onto the entire surface of the upper film part and an overlapping area of the lower film part. In the etching step, the upper film portion may be spin-etched from above.
　この製造方法によれば、上膜部は、スピンエッチングされる。この場合、エッチング液が下膜部の表面のうち下向きの成分を有する下向き領域には到達しにくいので、下膜部の下向き領域に被覆部を形成する必要性は低い。したがって、上膜部のエッチングがスピンエッチング以外の手法で行われる方法と比較して、被覆部を小さくすることができ、ウエハの製造に用いられる感光性樹脂の量を減らすことができる。 According to this manufacturing method, the upper film portion is spin-etched. In this case, since it is difficult for the etching solution to reach the downward region of the surface of the lower film portion that has a downward component, there is little need to form a covering portion on the downward region of the lower film portion. Therefore, compared to a method in which the upper film portion is etched by a method other than spin etching, the covering portion can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer can be reduced.
　また、前記塗布工程において、前記基板接合体は、前記感光性樹脂に浸漬されてもよい。 Furthermore, in the coating step, the substrate assembly may be immersed in the photosensitive resin.
　この製造方法によれば、下膜部の下向き領域にも感光性樹脂を塗布することができる。下膜部の下向き領域に塗布された感光性樹脂は、下向きに照射された光に曝されないので、感光及び可溶化せずに残存する。このことにより、下膜部の下向き領域が被覆部によって覆われるので、当該下向き領域が被覆部によって覆われない方法と比較して、下膜部が上膜部と共にエッチングされることによる下膜部の欠損を抑制することができる。 According to this manufacturing method, the photosensitive resin can also be applied to the downward facing region of the lower film portion. The photosensitive resin applied to the downward region of the lower film portion is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized. As a result, the downward area of the lower film part is covered by the covering part, so compared to a method in which the downward facing area is not covered by the covering part, the lower film part is etched together with the upper film part. It is possible to suppress the loss of.
　また、下膜部の表面に塗布された感光性樹脂が前記の光に曝されない場合、下膜部の表面の全面が、被覆部によってエッチング液から保護される。このことにより、エッチング工程において、基板接合体がエッチング液に浸漬される浸漬エッチングを行うことができる。したがって、スピンエッチングなどの基板接合体を１つずつ処理するエッチング手法を採用する場合と比較して、ウエハの製造効率を向上させることができる。 Furthermore, when the photosensitive resin coated on the surface of the lower film part is not exposed to the above-mentioned light, the entire surface of the lower film part is protected from the etching solution by the covering part. Thereby, in the etching process, immersion etching in which the substrate assembly is immersed in an etching solution can be performed. Therefore, wafer manufacturing efficiency can be improved compared to the case where an etching method such as spin etching is employed in which substrate assemblies are processed one by one.
　また、前記上部基板は、前記厚み方向に沿って見て前記接続部よりも外側に突出した突出部を有してもよい。前記上膜部の表面は、下向きの成分を有する下向き領域を有してもよい。前記被覆部形成工程において、前記被覆部を構成する樹脂が、前記下膜部に注がれて前記下膜部の表面の全面と前記上膜部の下向き領域とにスピンコートされてもよい。 Furthermore, the upper substrate may have a protruding part that protrudes outward from the connecting part when viewed along the thickness direction. The surface of the upper membrane portion may have a downward region having a downward component. In the covering portion forming step, a resin constituting the covering portion may be poured onto the lower film portion and spin-coated onto the entire surface of the lower film portion and a downward region of the upper film portion.
　この製造方法によれば、樹脂は、下膜部に注がれてスピンコートされるので、上膜部の上向き領域に到達しにくい。そのため、エッチング工程において、他の塗布手法と比較して、上膜部の上向き領域を被覆部からより確実に露出させることができる。したがって、上膜部をより確実にエッチングすることができる。 According to this manufacturing method, since the resin is poured onto the lower film part and spin-coated, it is difficult for the resin to reach the upward region of the upper film part. Therefore, in the etching process, the upward region of the upper film portion can be exposed from the covering portion more reliably than with other coating methods. Therefore, the upper film portion can be etched more reliably.
　また、前記の製造方法によれば、樹脂を上膜部の表面から除去して上膜部を露出させる工程（例えば、感光性樹脂の感光及び除去）が必要とされない。そのため、当該工程が必要とされる方法と比較して、ウエハの製造における工程数を削減することができる。したがって、ウエハの製造効率を向上させることができる。 Furthermore, according to the above manufacturing method, there is no need for the step of removing the resin from the surface of the upper film portion to expose the upper film portion (for example, exposing and removing the photosensitive resin). Therefore, the number of steps in wafer manufacturing can be reduced compared to methods that require this step. Therefore, wafer manufacturing efficiency can be improved.
　以下、本発明の実施形態について、図面を参照しながら説明する。なお、これらの実施形態は、本発明を限定するものではない。また、図面において実質的に同一の部材については、同一の符号を付すことにより説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that these embodiments do not limit the present invention. In addition, substantially the same members in the drawings are designated by the same reference numerals and the description thereof will be omitted.
　以下では、説明の便宜上、「上」、「下」等の方向を示す用語を用いるが、これらの用語は、本発明に係るウエハの製造方法や当該製造方法によって製造されるウエハの使用状態等を限定するものではない。 In the following, for convenience of explanation, terms indicating directions such as "upper" and "lower" are used, but these terms are used to describe the wafer manufacturing method according to the present invention and the usage state of the wafer manufactured by the manufacturing method. It is not limited to.
＜実施形態＞
　図１～図５を参照しながら、本発明に係るウエハの製造方法の第１の例及び当該製造方法によって製造されるウエハについて説明する。図１は、本発明の実施形態に係るウエハの製造方法の第１の例を示す平面図である。図２は、本発明の実施形態に係るウエハの製造方法によって製造されるウエハの図１におけるIII－III線に対応する断面図である。図３は、図１におけるIII－III線に沿った断面図である。図４は、図３に続く工程を示す断面図である。図５は、図４に続く工程を示す断面図である。図６は、図５に示す工程を示す拡大断面図である。 <Embodiment>
A first example of a wafer manufacturing method according to the present invention and a wafer manufactured by the manufacturing method will be described with reference to FIGS. 1 to 5. FIG. 1 is a plan view showing a first example of a wafer manufacturing method according to an embodiment of the present invention. FIG. 2 is a cross-sectional view of a wafer manufactured by the wafer manufacturing method according to the embodiment of the present invention, taken along line III-III in FIG. FIG. 3 is a sectional view taken along line III-III in FIG. 1. FIG. 4 is a cross-sectional view showing a step subsequent to FIG. 3. FIG. 5 is a sectional view showing a step following FIG. 4. FIG. 6 is an enlarged sectional view showing the process shown in FIG. 5.
　図２に示すように、ウエハ１は、酸化膜４０に覆われた下部基板２０と、下部基板２０の厚み方向において酸化膜４０を介して下部基板２０に接合された上部基板３０とを備えている。下部基板２０の厚み方向は、上部基板３０の厚み方向でもある。以下では、下部基板２０及び上部基板３０の厚み方向を、単に厚み方向という。本明細書及び特許請求の範囲において、厚み方向は、上下方向に対応する。図２に示す例では、下部基板２０及び上部基板３０の各々は、シリコン基板である。 As shown in FIG. 2, the wafer 1 includes a lower substrate 20 covered with an oxide film 40, and an upper substrate 30 bonded to the lower substrate 20 through the oxide film 40 in the thickness direction of the lower substrate 20. There is. The thickness direction of the lower substrate 20 is also the thickness direction of the upper substrate 30. Hereinafter, the thickness direction of the lower substrate 20 and the upper substrate 30 will be simply referred to as the thickness direction. In this specification and claims, the thickness direction corresponds to the up-down direction. In the example shown in FIG. 2, each of the lower substrate 20 and the upper substrate 30 is a silicon substrate.
　下部基板２０及び上部基板３０がシリコン基板である場合、酸化膜４０は、酸化シリコンを含む。酸化膜４０は、厚み方向において下部基板２０と上部基板３０との間に挟まれた内膜部４１と、下部基板２０の外表面を覆う下膜部４２とを有する。本明細書及び特許請求の範囲において、下部基板２０の外表面とは、下部基板２０の表面のうち、酸化膜４０を介して上部基板３０と接合している接合領域を除く領域を指す。つまり、下膜部４２は、酸化膜４０の下部基板２０を覆う部分のうち、内膜部４１を除く部分である。 When the lower substrate 20 and the upper substrate 30 are silicon substrates, the oxide film 40 contains silicon oxide. The oxide film 40 has an inner film portion 41 sandwiched between the lower substrate 20 and the upper substrate 30 in the thickness direction, and a lower film portion 42 that covers the outer surface of the lower substrate 20. In this specification and claims, the outer surface of the lower substrate 20 refers to a region of the surface of the lower substrate 20 excluding the bonding region where it is bonded to the upper substrate 30 via the oxide film 40. In other words, the lower film portion 42 is a portion of the oxide film 40 that covers the lower substrate 20, excluding the inner film portion 41.
　一方、上部基板３０の外表面は、酸化膜には覆われていない。本明細書及び特許請求の範囲において、上部基板３０の外表面とは、上部基板３０の表面のうち、酸化膜４０を介して上部基板３０と接合している接合領域を除く領域を指す。 On the other hand, the outer surface of the upper substrate 30 is not covered with an oxide film. In this specification and the claims, the outer surface of the upper substrate 30 refers to a region of the surface of the upper substrate 30 excluding the bonding region bonded to the upper substrate 30 via the oxide film 40.
　本発明の実施形態に係るウエハの製造方法の第１の例について説明する。図１～図５では、酸化膜４０の厚さは、酸化膜４０の配置を見やすく示すために、誇張して示されている。また、各図において、下部基板２０及び上部基板３０は、同じ厚みで示されているが、異なる厚みであってもよい。 A first example of a wafer manufacturing method according to an embodiment of the present invention will be described. In FIGS. 1 to 5, the thickness of the oxide film 40 is exaggerated to show the arrangement of the oxide film 40 more clearly. Furthermore, although the lower substrate 20 and the upper substrate 30 are shown to have the same thickness in each figure, they may have different thicknesses.
（準備工程）
　まず、図３に示すように、準備工程においては、ウエハ１を製造するための基板接合体１０が準備される。 (Preparation process)
First, as shown in FIG. 3, in a preparation step, a substrate assembly 10 for manufacturing a wafer 1 is prepared.
　基板接合体１０は、下部基板２０と、厚み方向において酸化膜４０の内膜部４１を介して下部基板２０に接合された上部基板３０とを有する。酸化膜４０は、下部基板２０及び上部基板３０の各々を覆っている。酸化膜４０は、内膜部４１及び下膜部４２に加えて、上部基板３０の外表面を覆う上膜部４３を有する。 The substrate assembly 10 includes a lower substrate 20 and an upper substrate 30 joined to the lower substrate 20 through an inner film portion 41 of an oxide film 40 in the thickness direction. The oxide film 40 covers each of the lower substrate 20 and the upper substrate 30. The oxide film 40 has an upper film part 43 that covers the outer surface of the upper substrate 30 in addition to an inner film part 41 and a lower film part 42 .
　下部基板２０及び上部基板３０は、厚み方向に沿って見た平面視において同一の直径を有する円形状である。以下では、厚み方向に沿って見た平面視を、単に平面視という。なお、下部基板２０及び上部基板３０は、平面視において円形以外の形状であってもよい。また、下部基板２０の直径と上部基板３０の直径とは、異なっていてもよい。本実施形態では、平面視において、下部基板２０の中心と上部基板３０の中心とが重なっている。 The lower substrate 20 and the upper substrate 30 are circular in shape and have the same diameter in a plan view along the thickness direction. Hereinafter, a plan view viewed along the thickness direction will simply be referred to as a plan view. Note that the lower substrate 20 and the upper substrate 30 may have shapes other than circular in plan view. Further, the diameter of the lower substrate 20 and the diameter of the upper substrate 30 may be different. In this embodiment, the center of the lower substrate 20 and the center of the upper substrate 30 overlap in plan view.
　下膜部４２と上膜部４３とは、内膜部４１の縁部である接続部４４において互いに接続している。図１に示すように、接続部４４は、平面視において環状である。すなわち、下膜部４２と上膜部４３とは、内膜部４１の縁部の全周において互いに接続している。なお、接続部４４は、下部基板２０及び上部基板３０の形状に応じた形となる。例えば、下部基板２０及び上部基板３０が多角形の場合、接続部４４は、平面視において多角形になる。つまり、環状とは、円形の環状に限らない。 The inferior membrane part 42 and the superior membrane part 43 are connected to each other at a connecting part 44 that is the edge of the endothelial membrane part 41. As shown in FIG. 1, the connecting portion 44 is annular in plan view. That is, the inferior membrane part 42 and the superior membrane part 43 are connected to each other along the entire circumference of the edge of the intimal membrane part 41. Note that the connecting portion 44 has a shape corresponding to the shapes of the lower substrate 20 and the upper substrate 30. For example, if the lower substrate 20 and the upper substrate 30 are polygonal, the connecting portion 44 will be polygonal in plan view. That is, the annular shape is not limited to a circular annular shape.
　図１及び図３に示すように、上部基板３０は、平面視において環状の接続部４４から外側に突出した上部突出部３１を有する。上部突出部３１は、本発明における「突出部」に対応する。図３に示す例では、上部突出部３１は、厚み方向に直交する方向に膨出した形状を有する。 As shown in FIGS. 1 and 3, the upper substrate 30 has an upper protrusion 31 that protrudes outward from the annular connecting portion 44 in plan view. The upper protrusion 31 corresponds to the "protrusion" in the present invention. In the example shown in FIG. 3, the upper protrusion 31 has a shape that bulges in a direction perpendicular to the thickness direction.
　図３に示すように、本実施形態では、下部基板２０は、平面視において環状の接続部４４から外側に突出した下部突出部２１を有する。下部突出部２１は、厚み方向に直交する方向に膨出した形状を有する。 As shown in FIG. 3, in this embodiment, the lower substrate 20 has a lower protrusion 21 that protrudes outward from the annular connecting portion 44 in plan view. The lower protrusion 21 has a shape that bulges in a direction perpendicular to the thickness direction.
　下膜部４２及び上膜部４３の各々の厚みは、一定又は略一定であるが、一定又は略一定でなくてもよい。下膜部４２及び上膜部４３の各々の厚みが一定又は略一定である場合、下膜部４２の表面４２ａ及び上膜部４３の表面４３ａの各々は、下部基板２０の外表面又は上部基板３０の外表面に沿った形状を有する。下膜部４２の表面４２ａは、厚み方向において下向きの成分を有する下向き領域４２ｂと、上向きの成分を有する上向き領域４２ｃとを有する。上膜部４３の表面４３ａは、厚み方向において下向きの成分を有する下向き領域４３ｂと、上向きの成分を有する上向き領域４３ｃとを有する。 The thickness of each of the lower membrane part 42 and the upper membrane part 43 is constant or approximately constant, but may not be constant or approximately constant. When the thickness of each of the lower film part 42 and the upper film part 43 is constant or substantially constant, each of the surface 42a of the lower film part 42 and the surface 43a of the upper film part 43 is the outer surface of the lower substrate 20 or the upper substrate. It has a shape along the outer surface of 30. The surface 42a of the lower membrane portion 42 has a downward region 42b having a downward component in the thickness direction, and an upward region 42c having an upward component. The surface 43a of the upper membrane portion 43 has a downward region 43b having a downward component in the thickness direction and an upward region 43c having an upward component.
　換言すると、下膜部４２の表面４２ａにおいて、下膜部４２の下向き領域４２ｂは、下部突出部２１の最も突出した部分よりも下の領域である。下膜部４２の上向き領域４２ｃは、下部突出部２１の最も突出した部分より上の領域である。同様に、上膜部４３の表面４３ａにおいて、上膜部４３の下向き領域４３ｂは、上部突出部３１の最も突出した部分よりも下の領域である。上膜部４３の上向き領域４３ｃは、上部突出部３１の最も突出した部分よりも上の領域である。 In other words, on the surface 42a of the lower membrane part 42, the downward region 42b of the lower membrane part 42 is an area below the most protruding part of the lower protrusion part 21. The upward region 42c of the lower membrane portion 42 is a region above the most protruding portion of the lower protrusion 21. Similarly, on the surface 43a of the upper membrane part 43, the downward region 43b of the upper membrane part 43 is an area below the most protruding part of the upper protrusion part 31. The upward region 43c of the upper membrane portion 43 is a region above the most protruding portion of the upper protrusion portion 31.
　下膜部４２の表面４２ａは、平面視において上膜部４３と重複し且つ上膜部４３の下向き領域４３ｂに接続する重複領域を有する。本実施形態では、下膜部４２の表面４２ａの全面が重複領域である。 The surface 42a of the lower membrane part 42 has an overlapping region that overlaps with the upper membrane part 43 and connects to the downward region 43b of the upper membrane part 43 in plan view. In this embodiment, the entire surface 42a of the lower membrane portion 42 is an overlapping region.
　このような基板接合体１０は、例えば、次のように作製されることができる。まず、下部基板２０と上部基板３０との少なくとも一方の表面に、酸化膜４０が形成される。酸化膜４０は、例えば、ドライ酸化、ウェット酸化、若しくはスチーム酸化による熱酸化、スパッタリング、又は化学蒸着（CVD: chemical vapor deposition）によって形成されることができる。本実施形態では、下部基板２０の表面のみに酸化膜４０が形成されているものとして説明する。次に、下部基板２０と上部基板３０とは、酸化膜４０を介して厚み方向に重ねられた状態で熱処理されて、接合される。このとき、熱処理が酸素を含む雰囲気下で行われると、上部基板３０の外表面にも酸化膜４０が形成される。このことにより、図３に示すような基板接合体１０が完成する。 Such a substrate assembly 10 can be produced, for example, as follows. First, an oxide film 40 is formed on at least one surface of the lower substrate 20 and the upper substrate 30. The oxide film 40 can be formed, for example, by dry oxidation, wet oxidation, thermal oxidation using steam oxidation, sputtering, or chemical vapor deposition (CVD). This embodiment will be described assuming that the oxide film 40 is formed only on the surface of the lower substrate 20. Next, the lower substrate 20 and the upper substrate 30 are heat-treated and bonded while being overlapped in the thickness direction with the oxide film 40 interposed therebetween. At this time, when the heat treatment is performed in an atmosphere containing oxygen, an oxide film 40 is also formed on the outer surface of the upper substrate 30. As a result, the substrate assembly 10 as shown in FIG. 3 is completed.
（被覆部形成工程）
　次いで、被覆部形成工程においては、図４に示すように、下膜部４２の少なくとも一部と、上膜部４３の一部と、環状の接続部４４とを覆う環状の被覆部５０が形成される。本実施形態では、被覆部５０は、厚み方向において接続部４４の全ての部分を厚み方向に跨いでいる。図４に示す例では、被覆部５０は、下膜部４２の上向き領域４２ｃと上膜部４３の下向き領域４３ｂとを覆っている。 (Coating part forming process)
Next, in the covering part forming step, as shown in FIG. 4, an annular covering part 50 is formed that covers at least a part of the lower film part 42, a part of the upper film part 43, and the annular connecting part 44. be done. In this embodiment, the covering section 50 straddles all parts of the connecting section 44 in the thickness direction. In the example shown in FIG. 4, the covering portion 50 covers the upward region 42c of the lower membrane portion 42 and the downward region 43b of the upper membrane portion 43.
　このような被覆部５０は、例えば、以下に説明する塗布工程と、露光工程と、現像工程とによって形成されることができる。 Such a covering portion 50 can be formed by, for example, a coating process, an exposure process, and a development process described below.
（塗布工程）
　まず、塗布工程においては、上膜部４３の表面４３ａのうち少なくとも下向き領域４３ｂ及び下膜部４２の表面４２ａのうち少なくとも上向き領域４２ｃに、感光性樹脂が塗布される。感光性樹脂は、特定の波長を有する光によって化学的又は構造的な変化を生じることにより、後述する現像液に対して可溶化する。感光性樹脂としては、例えば、東京応化工業株式会社製ＯＦＰＲ－５０００などのポジ型フォトレジストを使用することができる。 (Coating process)
First, in the coating step, a photosensitive resin is applied to at least the downward region 43b of the surface 43a of the upper film portion 43 and at least the upward region 42c of the surface 42a of the lower film portion 42. The photosensitive resin undergoes a chemical or structural change due to light having a specific wavelength, thereby becoming soluble in the developer described below. As the photosensitive resin, for example, a positive photoresist such as OFPR-5000 manufactured by Tokyo Ohka Kogyo Co., Ltd. can be used.
　感光性樹脂は、例えば、スピンコートによって塗布される。図４に示す例では、感光性樹脂は、上膜部４３の上向き領域４３ｃに注がれ、基板接合体１０の回転によって、上膜部４３の表面４３ａの全面と下膜部４２の上向き領域４２ｃとに塗り広げられる。一方、感光性樹脂は、基板接合体１０の回転による遠心力によって下膜部４２から離れて飛散するので、下膜部４２の下向き領域４２ｂには塗布されない。 The photosensitive resin is applied, for example, by spin coating. In the example shown in FIG. 4, the photosensitive resin is poured onto the upward region 43c of the upper film portion 43, and as the substrate assembly 10 rotates, the photosensitive resin is poured onto the entire surface 43a of the upper film portion 43 and the upward region of the lower film portion 42. It is spread over 42c. On the other hand, since the photosensitive resin is scattered away from the lower film part 42 due to the centrifugal force caused by the rotation of the substrate assembly 10, it is not applied to the downward region 42b of the lower film part 42.
　なお、感光性樹脂の塗布のための手法は、下膜部４２の表面４２ａ及び上膜部４３の表面４３ａのうち少なくとも被覆部５０が形成される部分に感光性樹脂を塗布することができれば、スピンコートに限定されない。例えば、感光性樹脂は、基板接合体１０の全体を感光性樹脂に浸漬することにより、下膜部４２の表面４２ａの全面と上膜部４３の表面４３ａの全面とに塗布されてもよい。また、例えば、感光性樹脂は、スプレー塗布されてもよい。 Note that the method for applying the photosensitive resin is as follows, if the photosensitive resin can be applied to at least the portion where the covering portion 50 is formed among the surface 42a of the lower film portion 42 and the surface 43a of the upper film portion 43. It is not limited to spin coating. For example, the photosensitive resin may be applied to the entire surface 42a of the lower film part 42 and the entire surface 43a of the upper film part 43 by immersing the entire substrate assembly 10 in the photosensitive resin. Also, for example, the photosensitive resin may be spray applied.
（露光工程）
　塗布工程後の露光工程においては、感光性樹脂を感光させる光が、図４に矢印で示すように、基板接合体１０に対して厚み方向に沿って下向きに照射される。上膜部４３の上向き領域４３ｃに塗布された感光性樹脂（図４に破線で示す）は、下向きに照射された光に曝されて感光する。一方、上膜部４３の下向き領域４３ｂ及び下膜部４２の下向き領域４２ｂに塗布された感光性樹脂は、光に曝されず感光しない。 (Exposure process)
In the exposure step after the coating step, the substrate assembly 10 is irradiated downward along the thickness direction with light that exposes the photosensitive resin, as shown by arrows in FIG. The photosensitive resin (indicated by broken lines in FIG. 4) applied to the upwardly facing region 43c of the upper film portion 43 is exposed to the downwardly irradiated light and becomes photosensitive. On the other hand, the photosensitive resin applied to the downward area 43b of the upper film part 43 and the downward area 42b of the lower film part 42 is not exposed to light and is not photosensitive.
　下向きに照射された光は、上部基板３０及び上膜部４３によって遮られる。そのため、下膜部４２の上向き領域４２ｃのうち前記の重複領域に塗布された感光性樹脂は、光に曝されず感光しない。一方、下膜部４２の上向き領域４２ｃに平面視において上膜部４３と重複しない非重複領域がある場合、当該非重複領域に塗布された感光性樹脂は、光に曝されて感光する。 The light irradiated downward is blocked by the upper substrate 30 and the upper film part 43. Therefore, the photosensitive resin applied to the overlapping region of the upward region 42c of the lower film portion 42 is not exposed to light and is not exposed to light. On the other hand, if there is a non-overlapping area in the upward region 42c of the lower membrane part 42 that does not overlap with the upper membrane part 43 in plan view, the photosensitive resin applied to the non-overlapping area is exposed to light and becomes photosensitive.
　なお、露光工程において、塗布された感光性樹脂のうち被覆部５０を構成する部分は、感光及び可溶化をより確実に防止するために、マスクされてもよい。 Note that in the exposure step, the portion of the applied photosensitive resin that constitutes the covering portion 50 may be masked to more reliably prevent exposure to light and solubilization.
（現像工程）
　露光工程後の現像工程においては、塗布された感光性樹脂のうち感光した部分が、現像液によって溶解される。現像液は、感光性樹脂のうち感光した部分を溶解させる一方、感光していない部分を溶解しない。現像液は、例えば、アルカリ現像液である。図４に示す例では、上膜部４３の上向き領域４３ｃに塗布された感光性樹脂（図４に破線で示す）が、現像液に溶解し、基板接合体１０から除去される。このことにより、上膜部４３の上向き領域４３ｃは、被覆部５０の外部に露出する。 (Development process)
In the development step after the exposure step, the exposed portion of the applied photosensitive resin is dissolved by a developer. The developer dissolves the exposed parts of the photosensitive resin, but does not dissolve the unexposed parts. The developer is, for example, an alkaline developer. In the example shown in FIG. 4, the photosensitive resin (indicated by a broken line in FIG. 4) applied to the upward region 43c of the upper film portion 43 is dissolved in the developer and removed from the substrate assembly 10. As a result, the upward region 43c of the upper membrane portion 43 is exposed to the outside of the covering portion 50.
　前記の塗布工程、露光工程、及び現像工程によって、塗布された感光性樹脂のうち感光しなかった部分で構成される被覆部５０が形成される。 Through the above-mentioned coating step, exposure step, and development step, a covering portion 50 is formed by the portion of the applied photosensitive resin that is not exposed to light.
（エッチング工程）
　次いで、エッチング工程では、図５に示すように、酸化膜４０を溶解するエッチング液によって、上膜部４３（図５に破線で示す）がエッチングされる。エッチング液は、酸化膜４０に対して腐食作用を有する。例えば、酸化膜４０が酸化シリコンを含む場合、エッチング液は、希フッ酸（DHF: diluted hydrofluoric acid）又はバッファードフッ酸（BHF: buffered hydrofluoric acid）である。 (etching process)
Next, in the etching process, as shown in FIG. 5, the upper film portion 43 (indicated by a broken line in FIG. 5) is etched using an etching solution that dissolves the oxide film 40. The etching solution has a corrosive effect on the oxide film 40. For example, when the oxide film 40 includes silicon oxide, the etching solution is diluted hydrofluoric acid (DHF) or buffered hydrofluoric acid (BHF).
　上膜部４３のエッチングは、例えば、スピンエッチングによって行われる。スピンエッチングの場合、エッチング液は、上膜部４３の上向き領域４３ｃに注がれ、基板接合体１０の回転によって、上向き領域４３ｃに広がりながら作用する。 Etching of the upper film portion 43 is performed, for example, by spin etching. In the case of spin etching, the etching solution is poured into the upward region 43c of the upper film portion 43, and spreads and acts on the upward region 43c as the substrate assembly 10 rotates.
　上膜部４３のエッチングが進行すると、図６に示すように、上部基板３０と被覆部５０との間に、上膜部４３の溶解によって隙間Ｄが形成される。隙間Ｄには、上部基板３０の外表面に沿って広がったエッチング液の少なくとも一部が進入する。隙間Ｄに進入したエッチング液は、上部基板３０の外表面から離れて滴り落ちたり、基板接合体１０の回転によって飛散したりせずに、隙間Ｄに沿って進みつつ、隙間Ｄの底部を構成する上膜部４３を溶解する。したがって、この方法によれば、上膜部４３の下向き領域４３ｂが被覆部５０によって覆われない方法と比較して、上膜部４３のうち下向き領域４３ｂを構成する部分をより確実に溶解させることができる。 As the etching of the upper film part 43 progresses, a gap D is formed between the upper substrate 30 and the covering part 50 by dissolving the upper film part 43, as shown in FIG. At least a portion of the etching solution that has spread along the outer surface of the upper substrate 30 enters the gap D. The etching solution that has entered the gap D continues along the gap D and forms the bottom of the gap D without leaving the outer surface of the upper substrate 30 and dripping or being scattered due to the rotation of the substrate assembly 10. The upper membrane portion 43 is dissolved. Therefore, according to this method, compared to a method in which the downward region 43b of the upper film portion 43 is not covered by the covering portion 50, the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved. I can do it.
　上膜部４３の少なくとも一部がエッチングされずに残存すると、上膜部４３の残存した部分は、後に基板接合体１０から外れて破片になり得る。当該破片は、後に行われ得る上部基板３０に対する研削、研磨等の加工を妨げたり、上部基板３０にクラック等の損傷を生じさせたりするおそれがある。一方、前記のスピンエッチングが行われる場合、上膜部４３のうち下向き領域４３ｂを構成する部分をより確実に溶解させることができるので、上膜部４３の破片が生じる可能性を低減することができる。したがって、上部基板３０の研削、研磨等の加工における支障や、上部基板３０の損傷を抑制することができる。 If at least a portion of the upper film portion 43 remains unetched, the remaining portion of the upper film portion 43 may later come off from the substrate assembly 10 and become fragments. The fragments may interfere with subsequent processing such as grinding or polishing on the upper substrate 30, or may cause damage such as cracks to the upper substrate 30. On the other hand, when the above-described spin etching is performed, the portion of the upper film portion 43 that constitutes the downward region 43b can be more reliably dissolved, so that the possibility of generation of fragments of the upper film portion 43 can be reduced. can. Therefore, problems in processing such as grinding and polishing of the upper substrate 30 and damage to the upper substrate 30 can be suppressed.
　また、隙間Ｄに進入したエッチング液は、上部基板３０と被覆部５０との間の上膜部４３がエッチングされるまで、下膜部４２には接触しない。つまり、下膜部４２のエッチングは、上膜部４３がエッチングされるまで開始されない。よって、下膜部４２が上膜部４３と共にエッチングされることによる下膜部４２の欠損を抑制することができる。 Furthermore, the etching solution that has entered the gap D does not contact the lower film part 42 until the upper film part 43 between the upper substrate 30 and the covering part 50 is etched. That is, etching of the lower film part 42 is not started until the upper film part 43 is etched. Therefore, damage to the lower film portion 42 due to etching of the lower film portion 42 together with the upper film portion 43 can be suppressed.
　なお、上膜部４３のエッチングの手法は、スピンエッチングに限定されない。例えば、下膜部４２の表面４２ａの全面が被覆部５０によって覆われる場合には、基板接合体１０の全体をエッチング液に浸漬する浸漬エッチングが行われてもよい。 Note that the method of etching the upper film portion 43 is not limited to spin etching. For example, when the entire surface 42a of the lower film portion 42 is covered with the covering portion 50, immersion etching may be performed in which the entire substrate assembly 10 is immersed in an etching solution.
（被覆部除去工程）
　次いで、基板接合体１０から被覆部５０が除去されて、ウエハ１が製造される。例えば、被覆部５０は、リムーバへの浸漬、アッシングなどによって除去される。 (Coated part removal process)
Next, the covering portion 50 is removed from the substrate assembly 10, and the wafer 1 is manufactured. For example, the covering portion 50 is removed by immersion in a remover, ashing, or the like.
　上部基板３０は、前記の被覆部除去工程の後に、ウエハ１の用途に応じて加工されてもよい。例えば、上部基板３０は、グラインディングホイールによって、厚み方向に沿って下向きに研削されてもよい。この場合、前記の製造方法によって製造されるウエハ１では上膜部４３が除去されているので、上部基板３０よりも硬い上膜部４３を研削することによるグラインディングホイールの消耗を抑制することができる。また、研削時に上膜部４３の破片が生じにくいので、当該破片に起因する上部基板３０の加工の支障や上部基板３０の損傷が起こる可能性を低減することができる。 The upper substrate 30 may be processed depending on the use of the wafer 1 after the above-mentioned covering portion removal step. For example, the upper substrate 30 may be ground downward along the thickness direction using a grinding wheel. In this case, since the upper film portion 43 is removed from the wafer 1 manufactured by the above manufacturing method, wear of the grinding wheel due to grinding of the upper film portion 43, which is harder than the upper substrate 30, can be suppressed. can. Furthermore, since fragments of the upper film portion 43 are less likely to occur during grinding, it is possible to reduce the possibility that the processing of the upper substrate 30 is hindered or the upper substrate 30 is damaged due to the fragments.
　図７及び図８を参照しながら、ウエハの製造方法の第２の例について説明する。図７は、本発明の実施形態に係るウエハの製造方法の第２の例を示す図であって、図１におけるIII－III線に対応する断面図である。図８は、図７に続く工程を示す断面図である。ウエハの製造方法の第２の例が、ウエハの製造方法の第１の例と異なる点は、被覆部形成工程において、前記の露光工程及び現像工程が必要とされない点である。そのため、被覆部５０を構成する樹脂は、感光性樹脂に限らず、例えば、耐フッ酸性の熱収縮樹脂を使用することができる。なお、ウエハの製造方法の第２の例において、第１の例と同様の工程については、以下では説明を省略する。 A second example of the wafer manufacturing method will be described with reference to FIGS. 7 and 8. FIG. 7 is a diagram showing a second example of the wafer manufacturing method according to the embodiment of the present invention, and is a cross-sectional view corresponding to the III-III line in FIG. 1. FIG. 8 is a sectional view showing a step following FIG. 7. The second example of the wafer manufacturing method differs from the first example of the wafer manufacturing method in that the above-mentioned exposure step and development step are not required in the covering portion forming step. Therefore, the resin constituting the covering portion 50 is not limited to photosensitive resin, and for example, hydrofluoric acid-resistant heat-shrinkable resin can be used. Note that in the second example of the wafer manufacturing method, descriptions of steps similar to those in the first example will be omitted below.
　被覆部形成工程においては、図７に示すように、基板接合体１０は、上下逆の姿勢、すなわち、下部基板２０が上部基板３０よりも上に位置する姿勢にされる。なお、以下では、基板接合体１０の姿勢に拘わらず、前記の各部品の名称を用いて説明する。 In the covering portion forming step, as shown in FIG. 7, the substrate assembly 10 is placed in an upside-down position, that is, the lower substrate 20 is positioned above the upper substrate 30. Note that, in the following description, the names of each of the above-mentioned parts will be used regardless of the orientation of the substrate assembly 10.
　樹脂は、基板接合体１０に対してスピンコートされる。より具体的には、樹脂は、下膜部４２の下向き領域４２ｂに注がれ、基板接合体１０の回転によって、下膜部４２の表面４２ａの全面と上膜部４３の下向き領域４３ｂとに塗り広げられる。一方、樹脂は、基板接合体１０の回転による遠心力によって上膜部４３から離れて飛散するので、上膜部４３の上向き領域４３ｃには塗布されない。塗布された樹脂は、硬化して被覆部５０を構成する。 The resin is spin-coated onto the substrate assembly 10. More specifically, the resin is poured into the downward region 42b of the lower film part 42, and as the substrate assembly 10 rotates, the resin is poured onto the entire surface 42a of the lower film part 42 and the downward region 43b of the upper film part 43. It can be spread. On the other hand, the resin is scattered away from the upper film part 43 due to the centrifugal force caused by the rotation of the substrate assembly 10, so that the resin is not applied to the upward region 43c of the upper film part 43. The applied resin is cured to form the covering portion 50.
　次いで、エッチング工程においては、図８に示すように、上膜部４３がエッチングされる。図８では、基板接合体１０は、元の姿勢、すなわち、図５に示す基板接合体１０と同じ姿勢で示されている。下膜部４２の表面４２ａの全面が被覆部５０によって覆われているので、浸漬エッチングによって上膜部４３をエッチングすることができる。なお、上膜部４３のエッチング手法は、特に限定されず、例えば、前記のスピンエッチングであってもよい。 Next, in the etching step, the upper film portion 43 is etched, as shown in FIG. In FIG. 8, the substrate assembly 10 is shown in its original position, ie, in the same position as the substrate assembly 10 shown in FIG. Since the entire surface 42a of the lower film part 42 is covered with the covering part 50, the upper film part 43 can be etched by dip etching. Note that the etching method for the upper film portion 43 is not particularly limited, and may be, for example, the above-mentioned spin etching.
　酸化膜４０の上膜部４３がエッチングされるとき、下膜部４２のうち上膜部４３に対する近傍部分にエッチング液が到達し、下膜部４２の少なくとも一部が上膜部４３と共にエッチングされてしまうおそれがある。一方、前記の製造方法によれば、下膜部４２の少なくとも一部は、エッチング工程において、被覆部５０によって覆われるので、エッチング液から保護される。 When the upper film part 43 of the oxide film 40 is etched, the etching solution reaches a portion of the lower film part 42 near the upper film part 43, and at least a part of the lower film part 42 is etched together with the upper film part 43. There is a risk that this may occur. On the other hand, according to the manufacturing method described above, at least a portion of the lower film portion 42 is covered with the covering portion 50 during the etching process, so that it is protected from the etching solution.
　さらに、前記の製造方法では、被覆部５０は、下膜部４２と上膜部４３との接続部４４を厚み方向に跨いでいる。このことにより、被覆部５０が接続部４４を跨がない方法と比較して、下膜部４２の前記した近傍部分がエッチング液からより確実に保護される。したがって、下膜部４２が上膜部４３と共にエッチングされることによる下膜部４２の欠損を抑制することができる。 Furthermore, in the above manufacturing method, the covering portion 50 straddles the connecting portion 44 between the lower membrane portion 42 and the upper membrane portion 43 in the thickness direction. As a result, compared to a method in which the covering portion 50 does not straddle the connecting portion 44, the above-mentioned nearby portion of the lower film portion 42 is more reliably protected from the etching solution. Therefore, damage to the lower film part 42 due to etching of the lower film part 42 together with the upper film part 43 can be suppressed.
　下膜部４２が部分的にエッチングされると、下膜部４２の厚みのばらつきが大きくなり、下膜部４２の表面に干渉縞が生じやすくなる。当該干渉縞は、ウエハ１の外形を認識してウエハ１の取扱い又は加工を行う装置の誤認識及び誤作動を引き起こし得る。一方、前記の方法によれば、下膜部４２の少なくとも一部がエッチング液から保護されるので、下膜部４２の厚みのばらつきが大きくなることを抑制することができる。このことにより、下膜部４２の表面に干渉縞が生じにくくなるので、前記の誤認識及び誤作動を抑制することができる。また、下膜部４２のうち被覆部５０によって保護された部分では、下膜部４２の厚みのばらつきが小さいので、下膜部４２を利用してウエハ１のパターニングを行うことができる。 If the lower film portion 42 is partially etched, the thickness of the lower film portion 42 will vary greatly, and interference fringes will likely occur on the surface of the lower film portion 42. The interference fringes may cause erroneous recognition and malfunction of a device that recognizes the outer shape of the wafer 1 and handles or processes the wafer 1. On the other hand, according to the above method, at least a portion of the lower film portion 42 is protected from the etching solution, so that it is possible to suppress the variation in the thickness of the lower film portion 42 from increasing. This makes it difficult for interference fringes to occur on the surface of the lower membrane part 42, so that the above-mentioned erroneous recognition and malfunction can be suppressed. Further, in the portion of the lower film portion 42 protected by the covering portion 50, the variation in the thickness of the lower film portion 42 is small, so that the wafer 1 can be patterned using the lower film portion 42.
　また、この製造方法によれば、下膜部４２の表面４２ａの全面が被覆部５０によってエッチング液から保護されるので、被覆部５０が下膜部４２の表面４２ａの一部のみを覆う方法と比較して、下膜部４２のエッチングによる欠損を更に抑制することができる。 Further, according to this manufacturing method, the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50. In comparison, defects in the lower film portion 42 due to etching can be further suppressed.
　また、前記の製造方法によれば、エッチング工程において、基板接合体１０がエッチング液に浸漬される浸漬エッチングを行うことができる。このことにより、スピンエッチングなどの基板接合体１０を１つずつ処理するエッチング手法を採用する方法と比較して、ウエハ１の製造効率を向上させることができる。 Furthermore, according to the manufacturing method described above, in the etching process, immersion etching in which the substrate assembly 10 is immersed in an etching solution can be performed. As a result, the manufacturing efficiency of the wafer 1 can be improved compared to a method using an etching method such as spin etching in which the substrate assembly 10 is processed one by one.
　また、この製造方法によれば、感光性樹脂を感光する光は、基板接合体１０に対して下向きに照射される。このことにより、上膜部４３の上向き領域４３ｃに塗布された感光性樹脂は、可溶化されて現像液によって溶解される。よって、エッチング工程において、上膜部４３の上向き領域４３ｃを被覆部５０から露出させて、エッチング液に接触させることができる。 Furthermore, according to this manufacturing method, the light that exposes the photosensitive resin is irradiated downward onto the substrate assembly 10. As a result, the photosensitive resin applied to the upward region 43c of the upper film portion 43 is solubilized and dissolved by the developer. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be exposed from the covering portion 50 and brought into contact with the etching solution.
　また、この製造方法によれば、上部基板３０及び上膜部４３が下向きによって照射された光を遮るため、上膜部４３の下向き領域４３ｂ及び下膜部４２の重複領域に塗布された感光性樹脂は、感光及び可溶化せずに残存する。このことにより、下膜部４２と上膜部４３との接続部４４を厚み方向に跨ぐ被覆部５０を、高い精度を必要とする塗布手法を利用することなく形成することができる。 Further, according to this manufacturing method, in order to block the light irradiated by the upper substrate 30 and the upper film part 43 downward, the photosensitive material applied to the downward facing area 43b of the upper film part 43 and the overlapping area of the lower film part 42 is The resin remains unsensitized and unsolubilized. As a result, the covering portion 50 spanning the connection portion 44 between the lower film portion 42 and the upper film portion 43 in the thickness direction can be formed without using a coating method that requires high precision.
　また、この製造方法によれば、上膜部４３は、スピンエッチングされる。この場合、エッチング液が下膜部４２の下向き領域４２ｂには到達しにくいので、下膜部４２の下向き領域４２ｂに被覆部５０を形成する必要性は低い。したがって、上膜部４３のエッチングがスピンエッチング以外の手法で行われる方法と比較して、被覆部５０を小さくすることができ、ウエハ１の製造に用いられる感光性樹脂の量を減らすことができる。 Furthermore, according to this manufacturing method, the upper film portion 43 is spin-etched. In this case, since it is difficult for the etching solution to reach the downward region 42b of the lower film portion 42, there is little need to form the covering portion 50 on the downward region 42b of the lower film portion 42. Therefore, compared to a method in which the upper film portion 43 is etched using a method other than spin etching, the covering portion 50 can be made smaller, and the amount of photosensitive resin used in manufacturing the wafer 1 can be reduced. .
　また、この製造方法によれば、下膜部４２の下向き領域４２ｂにも感光性樹脂を塗布することができる。下膜部４２の下向き領域４２ｂに塗布された感光性樹脂は、下向きに照射された光に曝されないので、感光及び可溶化せずに残存する。このことにより、下膜部４２の下向き領域４２ｂが被覆部５０によって覆われるので、当該下向き領域４２ｂが被覆部５０によって覆われない方法と比較して、下膜部４２が上膜部４３と共にエッチングされることによる下膜部４２の欠損を抑制することができる。 Furthermore, according to this manufacturing method, the photosensitive resin can also be applied to the downward region 42b of the lower film portion 42. The photosensitive resin applied to the downward region 42b of the lower film portion 42 is not exposed to the downwardly irradiated light, and therefore remains without being exposed to light or solubilized. As a result, the downward region 42b of the lower film portion 42 is covered by the covering portion 50, so that the lower film portion 42 is etched together with the upper film portion 43, compared to a method in which the downward region 42b is not covered by the covering portion 50. It is possible to suppress the loss of the inferior membrane portion 42 due to this.
　また、下膜部４２の表面４２ａに塗布された感光性樹脂が前記の光に曝されない場合、下膜部４２の表面４２ａの全面が、被覆部５０によってエッチング液から保護される。このことにより、エッチング工程において、基板接合体１０がエッチング液に浸漬される浸漬エッチングを行うことができる。したがって、スピンエッチングなどの基板接合体１０を１つずつ処理するエッチング手法を採用する場合と比較して、ウエハ１の製造効率を向上させることができる。 Further, when the photosensitive resin applied to the surface 42a of the lower film part 42 is not exposed to the above-mentioned light, the entire surface 42a of the lower film part 42 is protected from the etching solution by the covering part 50. Thereby, in the etching process, immersion etching in which the substrate assembly 10 is immersed in an etching solution can be performed. Therefore, the manufacturing efficiency of the wafer 1 can be improved compared to the case where an etching method such as spin etching is employed in which the substrate assembly 10 is processed one by one.
　また、この製造方法によれば、樹脂は、下膜部４２に注がれてスピンコートされるので、上膜部４３の上向き領域４３ｃに到達しにくい。そのため、エッチング工程において、他の塗布手法と比較して、上膜部４３の上向き領域４３ｃを被覆部５０からより確実に露出させることができる。したがって、上膜部４３をより確実にエッチングすることができる。 Furthermore, according to this manufacturing method, since the resin is poured onto the lower film part 42 and spin-coated, it is difficult for the resin to reach the upward region 43c of the upper film part 43. Therefore, in the etching process, the upward region 43c of the upper film portion 43 can be more reliably exposed from the covering portion 50 compared to other coating methods. Therefore, the upper film portion 43 can be etched more reliably.
　また、前記の製造方法によれば、樹脂を上膜部４３の表面４３ａから除去して上膜部４３を露出させる工程（例えば、感光性樹脂の感光及び除去）が必要とされない。そのため、当該工程が必要とされる方法と比較して、ウエハ１の製造における工程数を削減することができる。したがって、ウエハ１の製造効率を向上させることができる。 Furthermore, according to the above manufacturing method, there is no need for the step of removing the resin from the surface 43a of the upper film portion 43 to expose the upper film portion 43 (for example, exposing and removing the photosensitive resin). Therefore, the number of steps in manufacturing the wafer 1 can be reduced compared to a method that requires this step. Therefore, the manufacturing efficiency of the wafer 1 can be improved.
　なお、本発明は、前述の実施形態に限定されるものではなく、その他種々の態様で実施できる。例えば、前記では、下部基板２０及び上部基板３０の各々がシリコン基板であるものとしたが、本発明はこれに限定されない。下部基板２０及び上部基板３０の各々は、それらの表面に酸化膜４０を形成可能な材料によって構成されてもよい。例えば、下部基板２０及び上部基板３０の各々は、リンやホウ素などの不純物をドープしたシリコン基板であってもよい。 Note that the present invention is not limited to the above-described embodiments, and can be implemented in various other forms. For example, in the above description, each of the lower substrate 20 and the upper substrate 30 is a silicon substrate, but the present invention is not limited thereto. Each of the lower substrate 20 and the upper substrate 30 may be made of a material capable of forming an oxide film 40 on their surfaces. For example, each of the lower substrate 20 and the upper substrate 30 may be a silicon substrate doped with impurities such as phosphorus or boron.
　また、前記では、準備工程において、上部基板３０と、酸化膜４０で覆われた下部基板２０とが接合されるものとしたが、本発明はこれに限定されない。基板接合体１０は、例えば、下部基板２０と酸化膜４０で覆われた上部基板３０とが接合されて作製されてもよく、いずれも酸化膜４０によって覆われた下部基板２０と上部基板３０とが接合されて作製されてもよい。 Furthermore, in the above description, the upper substrate 30 and the lower substrate 20 covered with the oxide film 40 are bonded in the preparation process, but the present invention is not limited thereto. For example, the substrate assembly 10 may be fabricated by bonding a lower substrate 20 and an upper substrate 30 covered with an oxide film 40. may also be produced by joining them together.
　本発明は、添付図面を参照しながら、好ましい実施形態に関連して充分に記載されているが、この技術に熟練した人々にとって、種々の変形や修正は明白である。このような変形や修正は、添付した請求の範囲による本発明の範囲から外れない限りにおいて、その中に含まれると理解されるべきである。 Although the invention has been fully described with reference to preferred embodiments and with reference to the accompanying drawings, various variations and modifications will become apparent to those skilled in the art. It is to be understood that such variations and modifications are included insofar as they do not depart from the scope of the invention as defined by the appended claims.
　本発明は、下部基板上の酸化膜の欠損を抑制することができるので、複数の基板が接合されたウエハの製造方法に有用である。 Since the present invention can suppress defects in the oxide film on the lower substrate, it is useful for a method of manufacturing a wafer in which a plurality of substrates are bonded.
　　１　　ウエハ
　１０　　基板接合体
　２０　　下部基板
　３０　　上部基板
　３１　　上部突出部
　４０　　酸化膜
　４２　　下膜部
　４２ａ　　表面
　４３　　上膜部
　４３ａ　　表面
　４３ｂ　　下向き領域
　４４　　接続部
　５０　　被覆部 1 Wafer 10 Substrate assembly 20 Lower substrate 30 Upper substrate 31 Upper protrusion 40 Oxide film 42 Lower film portion 42a Surface 43 Upper film portion 43a Surface 43b Downward region 44 Connection portion 50 Covering portion

Claims (6)

  1. 　下部基板と、前記下部基板の厚み方向において前記下部基板と隣り合う上部基板と、前記下部基板と前記上部基板との間にある内膜部、前記下部基板の外表面を覆う下膜部、及び前記上部基板の外表面を覆い前記下膜部に接続する上膜部を有する酸化膜とを備えた基板接合体が準備される準備工程と、
    　前記下膜部の少なくとも一部と、前記上膜部の一部と、前記下膜部と前記上膜部との環状の接続部とを覆う環状の被覆部が形成される被覆部形成工程と、
    　前記上膜部が、前記酸化膜を溶解するエッチング液によってエッチングされるエッチング工程と、
    　を含む、
    　ウエハの製造方法。     a lower substrate, an upper substrate adjacent to the lower substrate in the thickness direction of the lower substrate, an inner film portion between the lower substrate and the upper substrate, a lower film portion covering the outer surface of the lower substrate; a preparation step of preparing a substrate assembly including an oxide film having an upper film part that covers the outer surface of the upper substrate and connects to the lower film part;
    a covering part forming step in which an annular covering part is formed that covers at least a part of the lower film part, a part of the upper film part, and an annular connection part between the lower film part and the upper film part; ,
    an etching step in which the upper film portion is etched with an etching solution that dissolves the oxide film;
    including,
    Wafer manufacturing method.
  2. 　前記被覆部は、前記下膜部の表面の全面を覆う、請求項１に記載のウエハの製造方法。 The method for manufacturing a wafer according to claim 1, wherein the covering portion covers the entire surface of the lower film portion.
  3. 　前記上部基板は、前記厚み方向に沿って見て前記接続部よりも外側に突出した突出部を有し、
    　前記上膜部の表面は、下向きの成分を有する下向き領域を有し、
    　前記下膜部の表面は、前記厚み方向に沿って見て前記上膜部と重複し且つ前記上膜部の下向き領域に接続する重複領域を有し、
    　前記被覆部形成工程は、
    　感光によって現像液に対して可溶化する感光性樹脂が、前記下膜部の重複領域と前記上膜部の下向き領域とに跨って塗布される塗布工程と、
    　前記感光性樹脂を感光する光が、前記基板接合体に対して前記厚み方向に沿って下向きに照射される露光工程と、
    　前記感光性樹脂のうち感光した部分が現像液によって溶解され、前記被覆部が形成される現像工程と、
    　を含む、
    　請求項１又は２に記載のウエハの製造方法。     The upper substrate has a protruding part that protrudes outward from the connecting part when viewed along the thickness direction,
    The surface of the upper membrane part has a downward region having a downward component,
    The surface of the lower membrane part has an overlapping region that overlaps with the upper membrane part and connects to the downward region of the upper membrane part when viewed along the thickness direction,
    The covering portion forming step includes:
    a coating step in which a photosensitive resin that becomes soluble in a developer upon exposure to light is applied across the overlapping region of the lower film portion and the downward region of the upper film portion;
    an exposure step in which the substrate assembly is irradiated downward along the thickness direction with light that exposes the photosensitive resin;
    a developing step in which the exposed portion of the photosensitive resin is dissolved by a developer to form the covering portion;
    including,
    A method for manufacturing a wafer according to claim 1 or 2.
  4. 　前記塗布工程において、前記感光性樹脂は、前記上膜部に注がれて前記上膜部の表面の全面と前記下膜部の重複領域とにスピンコートされ、
    　前記エッチング工程において、前記上膜部は、上方からスピンエッチングされる、
    　請求項３のウエハの製造方法。     In the coating step, the photosensitive resin is poured onto the upper film part and spin-coated on the entire surface of the upper film part and the overlapping area of the lower film part,
    In the etching step, the upper film portion is spin-etched from above.
    The method for manufacturing a wafer according to claim 3.
  5. 　前記塗布工程において、前記基板接合体は、前記感光性樹脂に浸漬される、請求項３に記載のウエハの製造方法。 The wafer manufacturing method according to claim 3, wherein in the coating step, the substrate assembly is immersed in the photosensitive resin.
  6. 　前記上部基板は、前記厚み方向に沿って見て前記接続部よりも外側に突出した突出部を有し、
    　前記上膜部の表面は、下向きの成分を有する下向き領域を有し、
    　前記被覆部形成工程において、前記被覆部を構成する樹脂が、前記下膜部に注がれて前記下膜部の表面の全面と前記上膜部の下向き領域とにスピンコートされる、
    　請求項２に記載のウエハの製造方法。     The upper substrate has a protruding part that protrudes outward from the connecting part when viewed along the thickness direction,
    The surface of the upper membrane part has a downward region having a downward component,
    In the covering part forming step, a resin constituting the covering part is poured onto the lower film part and spin coated on the entire surface of the lower film part and a downward region of the upper film part.
    The method for manufacturing a wafer according to claim 2.
PCT/JP2023/011360 2022-03-25 2023-03-23 Method for manufacturing wafer WO2023182393A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202024A (en) * 1989-01-31 1990-08-10 Fujitsu Ltd Formation of stuck substrate into thin film
JPH1167701A (en) * 1997-08-22 1999-03-09 Sumitomo Metal Ind Ltd Manufacture of bonded soi board and protective agent applying apparatus
JP2004022838A (en) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp Laminated soi substrate and method for manufacturing the same
JP2006100406A (en) * 2004-09-28 2006-04-13 Toshiba Ceramics Co Ltd Manufacturing method of soi wafer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02202024A (en) * 1989-01-31 1990-08-10 Fujitsu Ltd Formation of stuck substrate into thin film
JPH1167701A (en) * 1997-08-22 1999-03-09 Sumitomo Metal Ind Ltd Manufacture of bonded soi board and protective agent applying apparatus
JP2004022838A (en) * 2002-06-17 2004-01-22 Sumitomo Mitsubishi Silicon Corp Laminated soi substrate and method for manufacturing the same
JP2006100406A (en) * 2004-09-28 2006-04-13 Toshiba Ceramics Co Ltd Manufacturing method of soi wafer

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