WO2023181367A1 - 矯正装置、露光装置、コータ・デベロッパ装置、露光システム、露光方法、及びデバイス製造方法 - Google Patents

矯正装置、露光装置、コータ・デベロッパ装置、露光システム、露光方法、及びデバイス製造方法 Download PDF

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Publication number
WO2023181367A1
WO2023181367A1 PCT/JP2022/014471 JP2022014471W WO2023181367A1 WO 2023181367 A1 WO2023181367 A1 WO 2023181367A1 JP 2022014471 W JP2022014471 W JP 2022014471W WO 2023181367 A1 WO2023181367 A1 WO 2023181367A1
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WIPO (PCT)
Prior art keywords
wafer
force
unit
shape
heating
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Ceased
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PCT/JP2022/014471
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English (en)
French (fr)
Japanese (ja)
Inventor
剛 一ノ瀬
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Nikon Corp
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Nikon Corp
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Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to EP22933506.2A priority Critical patent/EP4503108A1/en
Priority to PCT/JP2022/014471 priority patent/WO2023181367A1/ja
Priority to KR1020247031704A priority patent/KR20240154044A/ko
Priority to CN202280093911.6A priority patent/CN118901128A/zh
Priority to JP2024509667A priority patent/JPWO2023181367A1/ja
Priority to TW112110017A priority patent/TWI874929B/zh
Publication of WO2023181367A1 publication Critical patent/WO2023181367A1/ja
Priority to US18/889,608 priority patent/US20250014918A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Definitions

  • the present invention relates to a correction apparatus, an exposure apparatus, a coater/developer apparatus, an exposure system, an exposure method, and a device manufacturing method.
  • a first aspect of the straightening apparatus of the present invention includes a mounting device for mounting a wafer, a heating section for heating the wafer mounted on the mounting device, and a heating section for heating the wafer mounted on the mounting device.
  • a force applying section that applies a force to the wafer
  • a first transport device that transports the wafer removed from the mounting device
  • a control section that controls the heating section and the force applying section; The section corrects the shape of the wafer by heating the wafer with the heating section and applying force to the wafer with the force applying section, and the first transfer device Transport the wafer.
  • a second aspect of the straightening apparatus of the present invention includes a mounting device for mounting a wafer, a heating section for heating the wafer mounted on the mounting device, and a force applying section for applying force to the wafer.
  • the shape of the wafer is corrected by heating the wafer by the heating unit and applying force to the wafer by the force applying unit so that the wafer is aligned with the placement device.
  • a third aspect of the straightening device of the present invention includes a reference member having a reference surface, a heating unit that heats the wafer, and applying force to the wafer so that the wafer follows the reference surface.
  • a force applying section includes a reference member having a reference surface, a heating unit that heats the wafer, and applying force to the wafer so that the wafer follows the reference surface.
  • a fourth aspect of the straightening apparatus of the present invention includes a measuring section that measures the three-dimensional shape of the wafer, a holding section that holds the center of the wafer, a heating section that heats the wafer, and an outer peripheral section of the wafer. a force applying section that applies a force in a first direction to the wafer; and a control section that controls the heating section and the force applying section, the control section heating the wafer with the heating section, Based on the three-dimensional shape measured by the measuring section, the force applying section applies a force to the outer circumference of the wafer to deform the wafer.
  • a fifth aspect of the straightening apparatus of the present invention includes a measuring section that measures the three-dimensional shape of the wafer, a holding section that holds the first portion of the wafer, a heating section that heats the wafer, and a third section of the wafer.
  • a force applying part that applies a force to deform a second part outside the first part in the first direction; and a control part that controls the heating part and the force applying part, and the control part is configured to control the heating part.
  • the force applying section applies a force to the second portion of the wafer based on the three-dimensional shape measured by the measuring section, thereby applying force to the wafer.
  • a sixth aspect of the straightening device of the present invention includes a holding part that holds the center of the wafer, a heating part that heats the wafer, and an outer peripheral part of the wafer, applying force in the first direction of the wafer. , a force applying section that applies force to the wafer.
  • a seventh aspect of the straightening device of the present invention includes a holding part that holds a side surface of a wafer, a heating part that heats the wafer, and a force applying part that applies force to the wafer to deform it through the holding part. , is provided.
  • An eighth aspect of the straightening apparatus of the present invention includes a holding part that holds the side surface of the wafer in the first direction, a heating part that heats the wafer, and a force that applies force to the wafer.
  • a provision part is provided.
  • a ninth aspect of the straightening device of the present invention includes: a measurement unit that measures the shape of the wafer; a heating unit that heats the wafer; and a force application unit that applies force to the wafer.
  • a control section that controls the heating section and the force applying section, the control section heating the wafer with the heating section and controlling the shape of the wafer based on the shape of the wafer measured by the measurement section; Control is performed so that the force applying section applies different forces at different positions within the plane of the wafer, or control is performed so that the force applying unit applies force with different pushing amounts at different positions within the plane of the wafer.
  • a first aspect of the correction system of the present invention includes the correction apparatus described above, a coating device capable of applying a photosensitive agent onto a wafer, and an energy beam that exposes the wafer coated with the photosensitive agent. and an exposure device.
  • a first aspect of the correction method of the present invention is an exposure method in which a wafer is exposed to an energy beam, and the wafer whose shape has been corrected by any of the correction apparatuses described above is exposed to the energy beam. Including.
  • a first aspect of the device manufacturing method of the present invention is a device manufacturing method including an exposure step, wherein the exposure step includes developing the wafer exposed using any of the exposure systems described above. including.
  • FIG. 2 is a perspective view of a wafer warped into an umbrella shape used in the exposure system of the first embodiment of the present invention.
  • FIG. 2 is a perspective view of the same wafer warped into a Frisbee shape.
  • FIG. 2 is a perspective view of the same wafer warped into a parabolic shape.
  • FIG. 2 is a perspective view of the same wafer warped into a saddle shape.
  • FIG. 3 is a cross-sectional view illustrating an example of a method for measuring the amount of warpage of the same wafer.
  • FIG. 2 is a plan view showing a model of the exposure system.
  • FIG. 2 is a schematic configuration diagram showing the same exposure system. It is a sectional view of a part of the correction device of the same exposure system.
  • FIG. 3 is a partially transparent plan view of a measuring section in the same correction device. 9 is a sectional view taken along cutting line A1-A1 in FIG. 9. FIG. It is a top view of the mounting device of the same correction device. FIG. 3 is a cross-sectional view of the same wafer corrected into an umbrella shape. It is a sectional view of a part of the correction device of the first modification of the first embodiment of the present invention. It is a sectional view of the correction device of the 4th modification of a 1st embodiment of the present invention. It is a sectional view of the correction device of the 5th modification of a 1st embodiment of the present invention. It is a sectional view of the correction device of the 6th modification of a 1st embodiment of the present invention.
  • FIG. 19 is a sectional view taken along cutting line A2-A2 in FIG. 18.
  • FIG. 1 the amount of warpage (warpage) of the wafer 200 is shown to be larger than the actual amount of warpage.
  • the wafer 200 in a state without warpage has a circular flat plate shape when viewed from above.
  • Wafer 200 is arranged along a horizontal plane.
  • the wafer 200 shown in FIG. 1 is warped in a so-called umbrella shape.
  • the wafer 200 is arranged so as to gradually move downward from the center of the wafer 200 toward the outer edge in a plan view.
  • the warped shape of the wafer 200 is not limited to the umbrella shape.
  • the wafer 200 shown in FIG. 2 is warped in a so-called Frisbee shape.
  • the center portion 201 of the wafer 200 in plan view is flat.
  • the outer circumferential portion 202 of the wafer 200 surrounding the center portion 201 is arranged so as to gradually move downward toward the outer edge.
  • the local curvature at the outer peripheral portion 202 is larger than the local curvature at the center portion 201.
  • the local radius of curvature at the outer peripheral portion 202 is smaller than the local radius of curvature at the center portion 201.
  • the wafer 200 shown in FIG. 3 is warped in a so-called parabolic shape.
  • the wafer 200 is arranged so as to gradually move upward from the center of the wafer 200 toward the outer edge in a plan view.
  • the wafer 200 shown in FIG. 4 is warped in a so-called saddle shape.
  • directions that are orthogonal to the thickness direction (first direction) D3 (hereinafter simply referred to as the thickness direction) of the wafer 200 and intersect with each other are defined as the first orthogonal direction (second direction) D1 and the second orthogonal direction D1. This is defined as an orthogonal direction (third direction) D2.
  • the thickness direction D3 is a direction in which gravitational acceleration acts on the wafer 200.
  • the portion located in the first orthogonal direction D1 with respect to the center of the wafer 200 in plan view is arranged so as to gradually move downward from the center toward the outer edge.
  • the portion located in the second orthogonal direction D2 with respect to the center of the wafer 200 in plan view is arranged so as to gradually move upward from the center toward the outer edge.
  • the wafer 200 has a cross direction (fourth direction) along a direction intersecting the first orthogonal direction D1 and the second orthogonal direction D2, respectively, than a dimension along the first orthogonal direction D1 and a second orthogonal direction D2. may be small in size.
  • the cross direction is a direction perpendicular to the thickness direction D3.
  • the flatness t1 of the pair of planes P1 is measured as follows. At a position radially outer than the wafer 200, the distance (flatness) between the pair of planes P1 is measured using a micrometer or the like. This measurement is performed at a plurality of locations (for example, six locations) at equal angles in the circumferential direction of the wafer 200. The average value of the flatness measured multiple times is defined as flatness t1 .
  • the thickness t2 of wafer 200 is measured as follows. The thickness of the wafer 200 is measured using a micrometer or the like at a position half the radius from the center of the wafer 200 toward the outside in the radial direction.
  • This measurement is performed at a plurality of locations (for example, six locations) at equal angles in the circumferential direction of the wafer 200.
  • the average value of the multiple measured thicknesses of the wafer 200 is defined as the thickness t2 of the wafer 200. Note that the method for measuring the amount of warpage of the wafer 200 is not limited to the method described using FIG. 5.
  • the exposure system 1 of this embodiment includes the correction device 10 of this embodiment, an exposure device 35, and a coater/developer device 36.
  • FIG. 6 FIG. 8, FIG. 9, and FIG. CONT. Note that in FIG. 9, a first frame 20, a second frame 21, etc., which will be described later, are shown transparently.
  • the measurement unit 11 is not particularly limited as long as it measures the three-dimensional shape of the wafer 200 (the shape of the wafer).
  • the measuring section 11 includes a first frame 20, a second frame 21, a holding section 22, a first sensor 23, second sensors 24a, 24b, 24c, 24d.
  • the first frame 20 and the second frame 21 are arranged to face each other.
  • the first frame 20 and the second frame 21 are arranged to face each other in the vertical direction.
  • the holding part 22 is fixed to the first frame 20.
  • the holding unit 22 holds the wafer 200 by suction or the like.
  • the holding unit 22 holds a first surface (lower surface) 203 of the wafer 200 facing the first side in the thickness direction D3.
  • the holding part 22 holds the center of the first surface 203.
  • the holding unit 22 rotates the wafer 200 around the central axis of the wafer 200.
  • the thickness direction D3 and the central axis of the wafer 200 are parallel to the Z-axis
  • the first surface 203 of the wafer 200 held by the holding part 22 faces the Z2 direction.
  • the second surface 204 of the wafer 200 held by the holding portion 22 faces the Z1 direction so as to face the second frame 21 .
  • the first sensor 23 and the second sensors 24a, 24b, 24c, and 24d are sensors that measure the position of a predetermined portion on the wafer 200 in a non-contact manner.
  • the types of the first sensor 23 and the second sensors 24a, 24b, 24c, and 24d are not limited.
  • the first sensor 23 is fixed to the second frame 21 so as to face the holding part 22 .
  • the second sensors 24a, 24b, 24c, and 24d are fixed to the first frame 20 at different positions in the radial direction of the wafer 200.
  • the second sensors 24a, 24b, 24c, and 24d are arranged along the X axis, but they do not need to be arranged on the same straight line.
  • all of the second sensors 24a, 24b, 24c, and 24d may be fixed to the first frame 20, or some of the second sensors 24a, 24b, 24c, and 24d may be fixed to the first frame 20, The rest may be fixed to the second frame 21.
  • the first sensor 23 measures the position in the thickness direction D3 of the center of the second surface (upper surface) 204 facing the second side opposite to the first side in the thickness direction D3.
  • the position in the thickness direction D3 may also be called the height.
  • the thickness of the wafer 200 is measured.
  • the second surface 204 of the wafer is a process surface on which various elements and the like are formed.
  • the first surface 203 and the second surface 204 are surfaces facing the thickness direction D3, respectively.
  • the second sensors 24a, 24b, 24c, and 24d measure the position in the thickness direction D3 at each portion in the radial direction of the first surface 203 of the wafer 200.
  • each of the second sensors 24a, 24b, 24c, and 24d measures the position of the second surface 204 in the thickness direction D3. The original shape is measured.
  • the measurement unit 11 also measures the amount of warpage of the wafer 200.
  • the first sensor 23 and the second sensors 24a, 24b, 24c, and 24d are capacitance sensors, but they may also be inductive sensors or optical sensors including a light receiving section. Moreover, the first sensor 23 and the second sensors 24a, 24b, 24c, and 24d may be different types of sensors.
  • the measurement unit 11 may measure the three-dimensional shape of the wafer 200 by acquiring an image of the wafer 200 using a camera, for example.
  • the three-dimensional shape of the wafer 200 may be measured by acquiring an image of the wafer 200 with a stereo camera and analyzing this image.
  • the measurement unit 11 may measure the three-dimensional shape of the wafer 200 using a 3D (three-dimensional) scanner.
  • a 3D scanner may measure a three-dimensional shape by projecting a grating pattern onto the wafer 200, and capturing and analyzing the shape of the projected pattern.
  • the measurement unit 11 irradiates the wafer 200 with a slit laser beam, receives the reflected light, and obtains distance information to the wafer 200 using the principle of triangulation or the principle of ToF (Time of Flight).
  • ToF Time of Flight
  • the mounting device 12 places the wafer 200 thereon.
  • the mounting device 12 includes a reference member 27 having a reference surface (mounting surface, upper surface) 27a.
  • the reference member 27 has a circular shape in plan view.
  • the reference surface 27a is curved upwardly over the entire circumference of the reference surface 27a. That is, the shape of the reference surface 27a of the mounting device 12 is the shape of a convex portion.
  • the shape of the reference surface 27a is based on the deformation caused by the reaction force after the force application unit 14 applies force to the wafer 200 so that it follows the reference surface 27a, and after the force is released from the wafer 200. Designed. This deformation may also be referred to as springback.
  • the wafer 200 is warped in a parabolic shape.
  • the outer peripheral portion 202 deforms upward with respect to the center portion 201 due to a reaction force after the force applied to the wafer 200 is released.
  • the wafer 200 is deformed along the reference plane 27a, the wafer 200 is deformed so that the outer peripheral part 202 is positioned below the center part 201. Then, the wafer 200 becomes flat due to the deformation caused by the reaction force.
  • the shape of the wafer 200 after the application of force to the wafer 200 is released does not have to be a flat plate shape.
  • the reference member 27 is made of metal or the like with high thermal conductivity.
  • the wafer 200 is placed on the reference surface 27a.
  • the reference member 27 is formed with a plurality of through holes 27b that penetrate in the vertical direction.
  • the plurality of through holes 27b include a through hole 27b1 and a plurality of (eight in this embodiment) through holes 27b2.
  • the through hole 27b1 is formed at the center of the reference member 27.
  • the plurality of through holes 27b2 are arranged at equal angles around the through hole 27b1 so as to surround the through hole 27b1 in plan view. Note that the number of through holes 27b formed in the reference member 27 and the arrangement of the through holes 27b are not limited.
  • the reference member 27 may include a standard for straightening the wafer 200.
  • the prototype referred to here has a predetermined shape for making the shape of the wafer 200 approach a predetermined reference shape, for example.
  • the heating unit 13 is not particularly limited as long as it is a device that heats the wafer 200 placed on the mounting device 12.
  • the heating section 13 is a heater. As shown in FIG. 8, for example, the heating unit 13 contacts the lower surface of the reference member 27. As shown in FIG. The heating unit 13 indirectly heats the wafer 200 by heating the reference member 27 of the mounting device 12 .
  • the heating section 13 does not need to be in contact with the reference member 27.
  • the heating by the heating unit may be electromagnetic induction heating, radiant heating, heating by hot air, heating by irradiation with electromagnetic waves or energy beams, heating by direct or indirect contact with a heat source, or the like.
  • the force applying unit 14 applies force to the wafer 200 placed on the mounting device 12 .
  • the force applying section 14 includes a plurality of cylindrical members 29, an exhaust section (not shown), a drive section (also referred to as an actuator or moving section) 15, has.
  • the plurality of cylindrical members 29 are arranged within the through holes 27b of the reference member 27, respectively.
  • the cylindrical member 29A which is one of the plurality of cylindrical members 29, is arranged within the through hole 27b1.
  • a plurality of cylindrical members 29B other than the cylindrical member 29A among the plurality of cylindrical members 29 are respectively arranged within the plurality of through holes 27b2.
  • Each cylindrical member 29 is movable in the vertical direction (Z-axis direction) with respect to the reference member 27.
  • the cylindrical member 29A is arranged at a position corresponding to the center of the wafer 200.
  • the plurality of cylindrical members 29B are arranged on a concentric circle with respect to the center of the wafer 200 at equal angles (equal azimuthal angles) around the center.
  • the exhaust section discharges the air inside the plurality of cylindrical members 29 to the outside of the plurality of cylindrical members 29 .
  • the upper end of each cylindrical member 29 serves as a suction portion 29a. That is, in this example, the force applying section 14 includes a plurality of suction sections 29a.
  • the drive unit 15 independently moves each cylindrical member 29 in the vertical direction with respect to the reference member 27. Note that the number of cylindrical members 29 that the force applying section 14 has may be one.
  • the transport device TR for holding and transporting the wafer 200 has a suction section (not shown).
  • a suction unit of the transfer device TR a device that vacuum-suctions the wafer 200 from below, a device that suctions the wafer 200 from above using the Bernoulli effect, or the like is used.
  • a so-called Bernoulli chuck is preferably used.
  • a Bernoulli chuck is a chuck that uses the Bernoulli effect to locally increase the flow velocity of ejected fluid (for example, air) to attract (hold without contacting) an object.
  • the Bernoulli effect is an effect in which the pressure of a fluid decreases as the flow velocity increases.
  • the suction state holding/floating state
  • the suction state is determined by the weight of the object to be suctioned (held or fixed) and the flow rate of the fluid ejected from the chuck.
  • the size of the gap between the chuck and the object to be held during suction is determined depending on the flow rate of the fluid ejected from the chuck.
  • the device that utilizes the Bernoulli effect ejects gas from its gas flow holes (for example, nozzles or spouts), generates a gas flow (gas flow) around the wafer 200, and removes the wafer 200. Suction.
  • the transport device TR holds the wafer 200 in a state where a part of the wafer 200 is suctioned by a suction section, and transports the wafer 200 from the mounting device 12 .
  • the wafer 200 before shape correction may be transferred to the mounting device 12 using the transfer device TR.
  • the transport device TR may transport the wafer 200, which has been removed from the mounting device 12 and whose shape has been corrected, toward a coating device 36a3, which will be described later.
  • the correction device 10 is placed apart from the exposure system 1, but for example, if the correction device 10 is connected in-line with the exposure system 1, the shape may be corrected using the transport device TR.
  • the wafer 200 may be transferred to the exposure system 1.
  • the control unit CONT of the correction device 10 includes a CPU (Central Processing Unit), a memory, and the like.
  • the memory stores a control program for controlling the CPU, a predetermined warp threshold, and the like.
  • the memory may store calculation results and determination results by the CPU, measurement results by the measurement unit 11, and the like.
  • the CPU operates based on a control program.
  • the control unit CONT is connected to the measurement unit 11, the heating unit 13, and the force application unit 14, and controls the measurement unit 11, the heating unit 13, and the force application unit 14.
  • the control unit CONT controls the heating unit 13
  • the control unit controls at least one of the position, heating time, and amount of heating of the wafer 200 by the heating unit 13. Note that whether or not to heat the wafer 200 is also included in the control by this control unit CONT.
  • control unit CONT controls the force applying unit 14
  • the control unit CONT controls the time, amount, position, and method of applying the force to the wafer 200 by the force applying unit 14.
  • Control at least one. Note that whether or not to apply force to the wafer 200 is also included in the control by the control unit CONT.
  • Exposure system 1 including exposure device 35 and coater/developer device 36 will be explained using FIGS. 6 and 7.
  • FIG. the coater/developer device 36 includes a coater/developer main body 36a and a transport system (substrate transport device) 36b.
  • the coater/developer main body 36a includes a coating table 36a1 and a developing table 36a2.
  • the coating table 36a1 applies a photosensitive material (resist) to the wafer 200 before being exposed.
  • the coating table 36a1 is included in the coating device 36a3.
  • the developing table 36a2 performs a developing process on the wafer 200 that has been subjected to an exposure process in an exposure apparatus main body 35b, which will be described later.
  • the developing table 36a2 is included in the developing device 36a4.
  • the developing device 36a4 develops the wafer 200 exposed by the exposure device 35.
  • the transport system 36b transports the wafer 200 between the coater/developer main body 36a and an interface section 35a, which will be described later.
  • the coating process on the coating table 36a1, the development process on the developing table 36a2, and the transport operation of the transport system 36b are controlled by the control device 36c.
  • the coater/developer main body 36a (coating table 36a1, developing table 36a2), transport system 36b, etc. are arranged inside a second chamber device 38 that is separate from a first chamber device 37, which will be described later.
  • the first chamber device 37 and the second chamber device 38 are connected via an interface section 35a, which will be described later.
  • the exposure apparatus 35 includes an interface section 35a, an exposure apparatus main body 35b, a transport system 35c, a pre-alignment unit 35d, a temperature control unit 35e, and a control device 35f.
  • the interface section 35a forms a connection section with the coater/developer device 36.
  • the exposure apparatus main body 35b performs an exposure process on the wafer 200 using, for example, an energy beam.
  • the transport system 35c transports the wafer 200.
  • the interface section 35a, the exposure apparatus main body 35b, and the transport system 35c are arranged inside the first chamber device 37 whose cleanliness is controlled.
  • the control device 35f centrally controls the operation of the exposure device 35 as a whole.
  • the interface section 35a may be included in the coater/developer device 36 instead of the exposure device 35, or may be a separate device from the exposure device 35 and the coater/developer device 36.
  • the interface section 35a is provided with a supply table 35a1 and a collection table 35a2.
  • the supply table 35a1 is supplied with the wafer 200 from the coating table 36a1 by the transport system 35c.
  • the wafer 200 exposed by the exposure apparatus body 35b is placed on the collection table 35a2, and is collected by the transport system 35c.
  • the exposure apparatus main body 35b includes a mask stage 35b1, a substrate stage 35b2, an illumination optical system 35b3, and a projection optical system 35b4.
  • the mask stage 35b1 is movable while holding the mask 210.
  • the "mask” includes a reticle on which a device pattern is formed to be reduced and projected onto the wafer 200 coated with a photosensitive material (resist).
  • the substrate stage 35b2 has a wafer holder 35b5 that holds a wafer 200 coated with a photosensitive material (resist).
  • the substrate stage 35b2 can move the wafer holder 35b5 holding the wafer 200.
  • Illumination optical system 35b3 illuminates mask 210 held on mask stage 35b1 with exposure light EL.
  • the projection optical system 35b4 projects an image of the pattern of the mask 210 illuminated with the exposure light EL onto the wafer 200.
  • the exposure apparatus main body 35b projects an image of a pattern formed on the mask 210 onto the wafer 200 while moving the mask 210 and the wafer 200 synchronously in different directions (opposite directions) in the scanning direction.
  • the exposure apparatus main body 35b is an immersion exposure apparatus to which an immersion method is applied.
  • the exposure apparatus main body 35b forms an immersion area A3 of the liquid LQ on the wafer 200 held on the substrate stage 35b2. Then, the wafer 200 is exposed by irradiating the exposure light EL onto the wafer 200 via the liquid LQ in the liquid immersion area A3.
  • the exposure apparatus main body 35b may not be an immersion exposure apparatus, for example.
  • a dry exposure apparatus that exposes the wafer 200 via gas between the projection optical system 35b4 and the wafer 200 may be used.
  • the pre-alignment unit 35d preliminarily (roughly) positions the wafer 200 that is transferred to the substrate stage 35b2.
  • the temperature control unit 35e adjusts the temperature of the wafer 200 transferred to the substrate stage 35b2 to the temperature of the substrate stage 35b2 (ambient temperature of the exposure apparatus main body 35b).
  • the transport system 35c includes a plurality of transport arms 35c1 to 35c3 (see FIG. 7, not shown in FIG. 6) and a plurality of transport arms 35c4, 35c5 (see FIG. 6, not shown in FIG. 7). .
  • the plurality of transport arms 35c1 to 35c3 transport the wafer 200 between the supply table 35a1 in the interface section 35a and the exposure apparatus main body 35b.
  • the plurality of transport arms 35c4 and 35c5 transport the wafer 200 between the recovery table 35a2 and the exposure apparatus main body 35b.
  • the transport system 35c includes a transport arm 35c1, a transport arm 35c2, a transport arm 35c3, a transport arm (unload arm) 35c4, and a transport arm 35c5.
  • the operations of these transport systems 35c are controlled by the control device 35f described above.
  • the transport arm 35c1 transports the wafer 200 from the supply table 35a1 to the pre-alignment unit 35d.
  • the transfer arm 35c2 transfers the wafer 200 from the pre-alignment unit 35d to the temperature control unit 35e.
  • the transfer arm 35c3 carries the wafer 200 before exposure processing from the temperature control unit 35e to the exposure apparatus main body 35b (substrate stage 35b2).
  • the transport arm 35c4 transports the wafer 200 that has undergone exposure processing from the exposure apparatus main body 35b (substrate stage 35b2).
  • the transfer arm 35c5 receives the wafer 200 from the transfer arm 35c4 and transfers it to the recovery table 35a2.
  • the control device 35f includes a display device 35f1 that displays the processing status of each component in the exposure apparatus 35.
  • the processing status in each component device includes the exposure processing status by the exposure apparatus main body 35b, the transfer status of the wafer 200 in the transfer system 35c, the alignment status in the pre-alignment unit 35d, and the temperature control status in the temperature control unit 35e.
  • the control device 35f and the control device 36c may be connected, for example, via a LAN or the like, and may be able to communicate with each other.
  • the control unit CONT uses the measurement unit 11 to measure the three-dimensional shape (shape) of the wafer 200 .
  • the measurement unit 11 also measures the amount of warpage of the wafer 200 before it is placed on the placement device 12. This shape measurement is performed before shape correction of the wafer 200, which will be described later.
  • control section CONT applies force to the wafer 200 using the force applying section 14 while heating the wafer 200 using the heating section 13. may be given. That is, the amount of heating of the wafer 200 and the magnitude of the force applied to the wafer 200 may be adjusted depending on the amount of warpage of the wafer 200 that is equal to or greater than the warpage threshold.
  • the control unit CONT causes the heating unit 13 to heat the reference member 27 of the mounting device 12 to a predetermined temperature.
  • the wafer 200 is placed on the reference surface 27a of the reference member 27 of the mounting device 12 by a transfer device (not shown).
  • the wafer 200 is placed on the mounting device 12 so that the first surface 203 of the wafer 200 faces downward.
  • the first surface 203 of the wafer 200 and the reference surface 27a of the reference member 27 of the mounting device 12 are in contact with each other.
  • the transfer device TR may be used as a transfer device that places the wafer 200 from the measurement section 11 onto the reference member 27 of the placement device 12.
  • control unit CONT causes the heating unit 13 to start heating the mounting device 12 before the wafer 200 comes into contact with the mounting device 12.
  • the control unit CONT may cause the heating unit 13 to start heating the mounting device 12 after the wafer 200 comes into contact with the mounting device 12.
  • the control unit CONT causes the drive unit 15 to move the plurality of cylindrical members 29 upward (in the Z1 direction) while discharging the air in the plurality of cylindrical members 29 using the exhaust section of the force applying unit 14 .
  • the control unit CONT causes the drive unit 15 to drive the plurality of cylindrical members 29 to move downward (Z2 direction), and applies force to the wafer 200. That is, the force applying unit 14 moves the wafer 200 by moving the plurality of cylindrical members 29 downward (in the Z2 direction) while the first surface 203 of the wafer 200 is attracted to the tips of the plurality of cylindrical members 29. A force is applied to the wafer 200 from the first surface 203 side. In this way, the force applying unit 14 applies force to the wafer 200 by contacting the wafer 200 placed on the mounting device 12 .
  • the wafer 200 deforms along the reference surface 27a of the reference member 27.
  • the control unit CONT corrects the shape of the wafer 200 by applying force to the wafer 200 using the force applying unit 14 so that the wafer 200 is aligned with the reference plane 27a of the mounting device 12.
  • the plurality of suction parts 29a of the force applying part 14 correct the shape of the wafer 200 by suctioning the wafer 200 from the first surface 203 side of the wafer 200.
  • the suction section of the force applying section 14 may perform suction from the second surface 204 side, which is the upper surface of the wafer 200.
  • control unit CONT corrects the shape of the wafer 200 by heating the wafer 200 with the heating unit 13 and applying force to the wafer 200 with the force applying unit 14. At this time, the wafer 200 is corrected into an umbrella shape with a smaller amount of warpage or deflection than before correction, as shown by the two-dot chain line L1. A wafer 200 whose shape has been corrected is shown in FIG.
  • the transport device TR removes the wafer 200 whose shape has been corrected from the mounting device 12 and transports it.
  • the shape-corrected wafer 200 is carried into the exposure system 1 by a transport device (not shown).
  • a transport device for example, when the wafer 200 is cooled by outside air or the like, the corrected shape is slightly restored and the wafer 200 becomes a flat plate.
  • the amount of warpage of the wafer 200 transferred from the mounting device 12 by the transporting device TR is made smaller than the amount of warping of the wafer 200 before being placed on the mounting device 12 by shape correction. Make it smaller.
  • the shape correction makes the shape of the wafer 200 transferred from the mounting device 12 by the transfer device TR closer to the flat shape than the shape of the wafer 200 before being mounted on the mounting device 12.
  • the shape-corrected wafer 200 may be transported toward a device (such as a cleaning device) other than the exposure system 1 (coater/developer device 36).
  • a request to supply the wafer 200 is output from the control device 35 f of the exposure apparatus 35 to the control device 36 c of the coater/developer device 36 .
  • the control device 36c causes the coating device 36a3 to apply the photosensitive agent onto the wafer 200 on the coating table 36a1.
  • the photosensitizer is dried at a temperature of 100°C or more and 150°C or less.
  • the control device 36c causes the transfer system 36b to transfer the wafer 200 coated with the photosensitive material to the supply table 35a1 of the interface section 35a.
  • the wafer 200 transferred to the supply table 35a1 of the interface section 35a is transferred to the pre-alignment unit 35d by the transfer arm 35c1.
  • the wafer 200 passed to the pre-alignment unit 35d is roughly aligned (pre-aligned) with respect to the substrate stage 35b2.
  • the aligned wafer 200 is transferred to the temperature control unit 35e by the transfer arm 35c2, and its temperature is adjusted to a predetermined temperature that is substantially the same as the temperature of the substrate stage 35b2. Thereafter, the wafer 200 is carried onto the substrate stage 35b2 of the exposure apparatus main body 35b by the transfer arm 35c3. The exposed wafer 200 is then transferred from the substrate stage 35b2 by the transfer arm 35c4 and then transferred to the transfer arm 35c5. The wafer 200 is transported to the collection table 35a2 by this transport arm 35c5.
  • the wafer 200 is placed on the recovery table 35a2, and the substrate becomes ready for recovery.
  • the control device 35f outputs a substrate recovery request to the control device 36c of the coater/developer device 36.
  • the control device 36c causes the transport system 36b to collect the wafer 200 placed on the collection table 35a2, and transports it to the developing table 36a2. In this way, the wafer 200 is transported by the transport systems 36b and 35c, and is subjected to a series of steps of photoresist coating, exposure, and development.
  • the shape of the wafer 200 is corrected by applying force to the wafer 200 while heating the wafer 200. Then, the wafer 200 whose shape has been corrected is transported.
  • the wafer 200 is placed on the placement device 12.
  • the shape of the wafer 200 is corrected by applying force to the wafer 200 while heating the wafer 200. Then, the wafer 200 whose shape has been corrected is transported. As described above, by applying force to the wafer 200 whose rigidity has been reduced by heating, the wafer 200 can be reliably straightened. Then, the wafer 200 whose shape has been corrected and removed from the mounting device 12 can be transported.
  • the amount of warpage of the wafer 200 transferred from the mounting device 12 by the transport device TR is made smaller than the amount of warpage of the wafer 200 before being placed on the mounting device 12. Thereby, the subsequent processing of the wafer 200 can be performed with the amount of warpage or deflection being small. Furthermore, a wafer 200 with a small amount of warpage or deflection can be carried into a device that will process the wafer 200 next.
  • shape correction the shape of the wafer 200 transported by the transport device TR is made closer to a flat plate shape than the shape of the wafer 200 before being mounted on the mounting device 12. Thereby, subsequent processing of the wafer 200 can be performed in a state in which the wafer 200 is corrected into a flat plate shape. Furthermore, the wafer 200 that has been corrected into a flat plate shape can be carried into a device that will process the wafer 200 next.
  • the transport device TR may transport the wafer 200 whose shape has been corrected toward the exposure system 1. Thereby, the exposure system 1 can process the wafer 200 in a shape-corrected state.
  • the control unit CONT corrects the shape of the wafer 200 by applying force to the wafer 200 using the force applying unit 14 so that the wafer 200 is aligned with the reference plane 27a of the mounting device 12. By applying force so that the wafer 200 follows the reference plane 27a, the shape of the wafer 200 can be reliably corrected.
  • the control unit CONT controls the force applying unit 14 so that a force is applied to the wafer 200 so that the wafer 200 aligns with the reference plane 27a. In this way, the shape of the wafer 200 is corrected. Thereby, the shape of the wafer 200 to be corrected can be stabilized to the shape of the reference surface 27a.
  • the heating unit 13 heats the wafer 200 by heating the mounting device 12 (reference member 27). By indirectly heating the wafer 200 by the heating unit 13 via the mounting device 12 (reference member 27), it is possible to suppress the temperature of the wafer 200 from rising rapidly.
  • the control unit CONT causes the heating unit 13 to start heating the mounting device 12 before the wafer 200 comes into contact with the mounting device 12.
  • the first surface 203 of the wafer 200 and the reference surface 27a of the mounting device 12 are in contact with each other, and the force applying section 14 applies force to the wafer 200 from the first surface 203 side of the wafer 200.
  • the second surface 204 of the wafer 200 is a process surface, damage to the second surface 204 due to force being applied to the second surface 204 can be suppressed.
  • the force applying unit 14 may apply force to the wafer 200 from the second surface 204 side, which is the upper surface of the wafer 200. In this case, force can be applied to the wafer 200 from the widely open second surface 204 side of the wafer 200, which is not in contact with the reference surface 27a of the mounting device 12.
  • the plurality of suction units 29a correct the shape of the wafer 200 by suctioning the wafer 200 from the first surface 203 side, which is the lower surface of the wafer 200. Since gravity acts downward on the wafer 200, suction of the wafer 200 can be performed more easily than when suction is performed from the second surface 204 side, which is the upper surface of the wafer 200.
  • the control unit CONT measures the shape of the wafer 200 using the measurement unit 11 before correcting the shape of the wafer 200. This makes it possible to check the state of the wafer 200, such as the amount of warpage, before shape correction, and to easily determine whether or not the shape of the wafer 200 needs to be corrected.
  • the control unit CONT applies a force to the wafer 200 using the force applying unit 14 while heating the wafer 200 using the heating unit 13. It's okay.
  • the amount of heating of the wafer 200, the magnitude of the force applied to the wafer 200, etc. can be adjusted depending on the amount of warpage of the wafer 200 that is equal to or greater than the warpage threshold.
  • the shape of the reference surface 27a of the mounting device 12 is the shape of a convex portion. Warpage of the wafer 200 can be corrected using the smooth reference surface 27a.
  • the shape of the reference surface 27a of the mounting device 12 is determined by the reaction force after the force applied to the wafer 200 is released after the force applying unit 14 applies a force to the wafer 200 so that the wafer 200 is aligned with the reference surface 27a. Designed based on transformation. Therefore, in consideration of the deformation caused by the reaction force, the shape of the wafer 200 after straightening can be brought closer to a flat plate shape.
  • the control unit CONT controls at least one of the duration of the force applied to the wafer 200 by the force applying unit 14, the amount of force, the position at which the force is applied, and the manner in which the force is applied. Therefore, the force applied by the force applying unit 14 to the wafers 200 can be controlled with high accuracy in accordance with the warpage of each wafer 200.
  • the control unit CONT controls at least one of the position, heating time, and amount of heating of the wafer 200 by the heating unit 13. Therefore, the heating of the wafers 200 by the heating unit 13 can be controlled with high accuracy in accordance with the warpage of each wafer 200.
  • the force applying unit 14 applies force to the wafer 200 by contacting the wafer 200 placed on the mounting device 12 . Therefore, force for straightening can be reliably applied to the wafer 200 stably placed on the mounting device 12.
  • the dimension of the wafer 200 in the cross direction is smaller than the dimension along the first orthogonal direction D1 and the second orthogonal direction D2.
  • the exposure system 1 can be configured using the correction apparatus 10 that can reliably correct the wafer 200.
  • the correction device 10 does not need to include the measurement section 11.
  • the correction device 10 does not need to include the transport device TR.
  • the shape-corrected wafer 200 may be transferred from the mounting device 12 using a transfer device that is not a part of the correction device 10.
  • the reference surface 27a of the reference member 27 of the mounting device 12 is curved so as to be convex downward over the entire circumference of the reference surface 27a.
  • the shape of the reference surface 27a of the mounting device 12 may be the shape of a recessed portion.
  • the wafer 200 can be corrected as shown by the two-dot chain line L2. Warpage of the wafer 200 can be corrected using the smooth reference surface 27a.
  • the correction device 10 includes a plurality of reference members 27 whose reference surfaces 27a have different shapes, and the reference members 27 may be replaced according to a desired correction shape. Furthermore, in the mounting device 12 shown in FIGS. 8, 11, and 13, the wafer 200 before shape correction is mounted on the reference member 27, but it is not mounted on the plurality of cylindrical members 29. It's okay. The wafer 200 before shape correction is placed on the plurality of cylindrical members 29 with the cylindrical member 29 raised and each of the suction parts of the cylindrical member 29 placed at a position away from the reference surface 27a. place Then, the shape of the wafer 200 is corrected on the reference member 27 by lowering the plurality of cylindrical members 29 while each cylindrical member 29 holds the wafer 200 by suction. In this case, based on the measurement result of the measurement unit 11, the position of each suction part of the cylindrical member 29 in the Z-axis direction when the wafer 200 is placed may be controlled.
  • the correction apparatus of the second modification may include a cooling unit CO (see FIG. 6) that cools the wafer 200 whose shape has been corrected.
  • the cooling unit CO cools the wafer 200 using cooling water, a Peltier device, and the like.
  • the cooling unit CO is disposed between the mounting device 12 and the coating device 36a3, and the wafer 200 is cooled when the wafer 200 is transferred between the mounting device 12 and the coating device 36a3.
  • Good In the straightening device of this second modified example the shape of the wafer 200 that has been straightened while being heated by the heating unit 13 can be stabilized immediately.
  • the cooling part 45 may be arranged so as to contact the lower surface of the reference member 27.
  • the cooling unit 45 cools the wafer 200 while the shape-corrected wafer 200 is placed on the mounting device 12 .
  • this third modification while the wafer 200 is placed on the mounting device 12, it is possible to stabilize the shape of the wafer 200 that has been corrected while being heated by the heating unit 13.
  • the control unit CONT may measure the shape of the wafer 200 using the measuring unit 11 after the shape of the wafer 200 has been corrected by the mounting device 12, the heating unit 13, and the force applying unit 14. By performing such a process, the amount of warpage of the wafer 200 can be detected after shape correction.
  • the correction device 10B of the fourth modification shown in FIG. 14 includes a mounting device 12, a heating section 13, and a force applying section 50.
  • a protective layer 206 is provided on the second surface 204 of the wafer 200 used in the correction apparatus 10B of this fourth modification.
  • the protective layer 206 is composed of a protective tape, a coating layer, or the like.
  • Protective layer 206 is removable from second side 204 of wafer 200 .
  • the protective layer 206 preferably has heat resistance of 50° C. or more and 300° C. or less.
  • the heating unit 13 may be placed apart from the reference member 27.
  • the heating unit 13 may heat the wafer 200 mounted on the reference member 27 of the mounting device 12 using radiant heat or the like.
  • the force applying section 50 includes a roller 51.
  • the roller 51 applies force to the wafer 200 placed on the mounting device 12 by contacting the upper surface of the protective layer 206 from above the protective layer 206 . Note that after the wafer 200 has been straightened, the protective layer 206 is removed from
  • the wafer 200 can be reliably straightened by applying force to the wafer 200 whose rigidity has been reduced by heating.
  • the force applying unit applies force to the wafer 200 placed on the mounting device 12 by gripping the outer peripheral portion 202 of the wafer 200 and bending the wafer 200. It's okay.
  • the correction device 10C of the fifth modification shown in FIG. 15 includes a force application section 55 in place of the force application section 50 of the correction device 10B of the fourth modification.
  • the mounting device 12 is not shown.
  • the force applying unit 55 applies vacuum suction from the first surface 203 side and the second surface 204 side. It is preferable that the force applying section 55 can arbitrarily change the distribution of the force applied to the wafer 200.
  • the force applying unit 55 corrects the wafer 200 by applying force to the wafer 200 placed on the mounting device 12 .
  • a correction device 10D according to the sixth modification example shown in FIG. 16 includes a force application section 60 in place of the mounting device 12 and the force application section 50 of the correction device 10B according to the fourth modification example.
  • the force applying section 60 serves as both a mounting device and a force applying section.
  • the force applying section 60 is provided on the first surface 203 side (lower side) of the wafer 200.
  • the force applying unit 60 places the wafer 200 thereon, and applies a force to the placed wafer 200 using an electric force, that is, a so-called electrostatic chuck.
  • the correction device 10D may be placed in a vacuum chamber.
  • the force applying unit 60 may also be provided on the second surface 204 side (above) of the wafer 200.
  • being placed on a mounting device means not only that the wafer 200 is supported in contact with the mounting device, but also that the wafer 200 is separated from the mounting device and is, for example, floating in the air. It also means to be held in a state by a mounting device.
  • the force that holds wafer 200 in the air is not limited to electrical force.
  • the force that holds the wafer 200 in the air may be a magnetic force (magnetic force), a force due to the Bernoulli effect, or the like.
  • the force applying unit applies force to the wafer 200 by electric force, magnetic force, etc. without contacting the wafer 200 when the wafer 200 is placed on the mounting device 12 as described above. You may give. With this configuration, the wafer 200 can be corrected without contacting the second surface 204, which is the process surface of the wafer 200, while suppressing the influence on the wafer 200.
  • the shape of the wafer 200 may be corrected by heating the wafer 200 by the heating unit and applying force to the wafer 200 so that the wafer 200 is aligned with the mounting device 12 by the force applying unit.
  • the shape of the wafer 200 is straightened by applying force so that the wafer 200 follows the mounting device 12 while heating the wafer 200.
  • the wafer 200 can be reliably straightened by applying force to the wafer 200 whose rigidity has been reduced by heating.
  • the correction device of the eighth modification includes a reference member 27 in place of the mounting device 12 of the correction device of the seventh modification.
  • the force applying section applies force to the wafer 200 so that the wafer 200 follows the reference surface 27a of the reference member 27.
  • a force is applied to the wafer 200 while heating the wafer 200 so that the wafer 200 follows the reference plane 27a.
  • the straightening device of the eighth modification and the corresponding straightening method by applying force so that the wafer 200, whose rigidity has been reduced by heating, is aligned along the reference plane 27a, the wafer 200 can be reliably straightened. .
  • the correction device of the ninth modification may include a holding section and a force application section (not shown) in place of the mounting device 12, force application section 14, and transport device TR in the correction device 10 of the present embodiment.
  • the holding section holds the center portion 201 of the wafer 200.
  • the force applying section holds the outer peripheral portion 202 of the wafer 200.
  • the force applying unit applies force to the outer peripheral portion 202 of the wafer 200 in the thickness direction D3.
  • the control unit deforms the wafer 200 by applying a force to the outer peripheral portion 202 of the wafer 200 using the force applying unit based on the three-dimensional shape measured by the measurement unit 11 while heating the wafer 200 using the heating unit 13 .
  • the wafer 200 is heated in the thickness direction D3 with respect to the outer circumference 202 of the wafer 200 based on the three-dimensional shape of the wafer 200. Empower. Then, the wafer 200 is deformed.
  • a force is applied in the thickness direction D3 to the outer peripheral portion 202 of the wafer 200 based on the three-dimensional shape of the wafer 200 to deform the wafer 200, It can be corrected.
  • the correction device of the tenth modification may include a holding portion and a force applying portion described below in place of the holding portion and the force applying portion in the correction device of the ninth modification.
  • the holding section holds the first portion of the wafer 200.
  • the force applying unit applies a force to deform the second portion of the wafer 200 outside the first portion in the thickness direction D3.
  • the control unit applies force to the wafer 200 by applying force to the second portion of the wafer 200 using the force applying unit based on the three-dimensional shape measured by the measuring unit 11 while heating the wafer 200 using the heating unit 13. .
  • the first portion of the wafer 200 is held.
  • a force is applied to the second portion of the wafer 200 based on the three-dimensional shape of the wafer 200, thereby applying force to the wafer 200.
  • the first portion of the wafer 200 is held.
  • the wafer 200 can be deformed and corrected by applying force to the second portion outside the first portion based on the three-dimensional shape of the wafer 200.
  • control section may measure the shape of the wafer 200 using the measurement section 11 before applying force to the wafer 200. This makes it possible to check the state of the wafer 200, such as the amount of warpage, before applying force to the wafer 200, and to easily determine whether or not the shape of the wafer 200 needs to be corrected.
  • control section may measure the shape of the wafer 200 using the measurement section 11 after deforming the wafer 200. If the amount of warpage of the wafer 200 measured by the measurement section 11 is equal to or greater than the warpage threshold, the heating section 13 may heat the wafer 200, and the force applying section may apply a force to the wafer 200. In this case, the amount of heating of the wafer 200, the magnitude of the force applied to the wafer 200, etc. can be adjusted depending on the amount of warpage of the wafer 200 that is equal to or greater than the warpage threshold.
  • the straightening apparatuses of the embodiments and modified examples may include a cooling unit that cools the straightened wafer 200. With this configuration, the shape of the wafer 200 that has been corrected while being heated by the heating unit 13 can be quickly stabilized.
  • the correction device of the eleventh modification does not need to include the measurement section 11 and the control section in the ninth modification of the present embodiment.
  • the force applying section applies force to the outer peripheral portion 202 of the wafer 200 in the thickness direction D3, thereby applying force to the wafer 200.
  • the correction method corresponding to the correction apparatus of the eleventh modified example configured as described above first, the center portion 201 of the wafer 200 is held. Next, while heating the wafer 200, a force is applied to the outer peripheral portion 202 of the wafer 200 in the thickness direction D3, thereby applying force to the wafer 200.
  • a force is applied to the outer peripheral portion 202 of the wafer 200 in the thickness direction D3. Then, by applying force to the wafer 200, the wafer 200 can be straightened.
  • the correction device of the twelfth modification may include a force application section described below in place of the mounting device 12, force application section 14, and transport device TR in the correction device 10 of the present embodiment.
  • the force applying unit applies force to the wafer 200 by applying force to the wafer 200 .
  • the control unit CONT heats the wafer 200 with the heating unit 13 and, based on the shape of the wafer 200 measured by the measurement unit 11, uses the force applying unit 14 to adjust different positions within the surface (surfaces 203, 204) of the wafer 200. to give different powers and control.
  • the shape of the wafer 200 is measured.
  • heating is performed based on the shape of the wafer 200.
  • different forces are applied at different positions within the plane of the wafer 200.
  • the force applied at different positions within the plane of the wafer 200 can be adjusted based on the shape of the wafer 200.
  • the control unit CONT heats the wafer 200 with the heating unit 13 and, based on the shape of the wafer 200 measured by the measurement unit 11, uses the force applying unit to adjust the in-plane direction of the wafer 200. Control may be performed so that force is applied with different pushing amounts at different positions.
  • a force is applied with different pushing amounts at different positions in the plane of the wafer 200 based on the shape of the wafer 200. give. Even in this case, the same effects as the correction device of the twelfth modification and the corresponding correction method can be achieved.
  • the exposure apparatus 35 includes a transport system 35c as a transport device.
  • the correction device corrects the shape of the wafer 200 so that the transfer system 35c can transfer the wafer 200.
  • the coater/developer device 36 includes the transport system 36b as a transport device.
  • the correction device corrects the shape of the wafer 200 so that the transfer system 36b can transfer the wafer 200. With this configuration, it is possible to prevent the wafer 200 from falling or shifting when the wafer 200 whose shape has been corrected is transported by the transport system 36b.
  • the correction device 65 of the present embodiment includes a placement device 66 and a drive unit (moving unit) 15 (in FIG. 17, instead of the placement device 12). (not shown).
  • the reference member 67 included in the mounting device 66 has a reference surface 67a that is the upper surface of the reference member 67 used for straightening the wafer 200.
  • the reference member 67 includes a plurality of divided reference members 68.
  • the plurality of division reference members 68 (reference members 67) have a disk shape as a whole.
  • the reference member 67 is divided into a plurality of parts in the circumferential direction and into a plurality of parts in the radial direction.
  • the plurality of division reference members 68 include a plurality of division reference members 68A, a plurality of division reference members 68B, and a plurality of division reference members 68C.
  • a plurality of (eight in this embodiment) dividing reference members 68A are arranged at equal angles around the reference line O1 along the vertical direction.
  • the plurality of division reference members 68A are arranged near the reference line O1.
  • a plurality of (eight in this embodiment) division reference members 68B surround a plurality of division reference members 68A from the radial outside of the reference member 67. Each division reference member 68B is arranged radially outside of the division reference member 68A.
  • a plurality of (eight in this embodiment) division reference members 68C surround a plurality of division reference members 68B from the outside in the radial direction of the reference member 67. Each division reference member 68C is arranged on the radially outer side of the division reference member 68B.
  • each division reference member 68 is a division correction surface 68a. That is, the reference member 67 has a plurality of divided correction surfaces 68a that constitute a reference surface 67a.
  • Each division reference member 68 is formed with a through hole 68b that penetrates in the vertical direction.
  • eight through holes 68b are formed in each of the plurality of division reference members 68A, the plurality of division reference members 68B, and the plurality of division reference members 68C.
  • a total of 24 through holes 68b are formed in the plurality of division reference members 68. Note that the number of division reference members 68 included in the reference member 67 and the arrangement of the through holes 68b formed in the plurality of division reference members 68 are not limited.
  • Each cylindrical member 29 of the force applying section 14 is arranged within the through hole 68b of each division reference member 68, respectively.
  • Each cylindrical member 29 of the force applying section 14 is provided respectively to the dividing correction surface 68a of the plurality of dividing reference members 68.
  • the drive unit 15 includes a gear set and a motor connected to each division reference member 68. When the motor is driven, the gear set is operated and the division reference member 68 is moved in the vertical direction. The drive unit 15 moves the plurality of division reference members 68 independently of each other in the thickness direction D3.
  • the wafer 200 can be reliably straightened by applying force to the wafer 200 whose rigidity has been reduced by heating.
  • the reference member 67 includes a plurality of division reference members 68, and the drive unit 15 moves the plurality of division reference members 68 independently of each other in the thickness direction D3.
  • the reference plane 67a constituted by the plurality of divided correction surfaces 68a can be deformed into a desired shape according to the warped shape of the wafer 200.
  • the correction device 75 of this embodiment includes a holding section 76, a heating section 82, and a force applying section 77.
  • the holding part 76 has a plurality of holding pieces 80.
  • Each holding piece 80 has an arc shape.
  • the plurality of holding pieces 80 hold the side surface 205 of the wafer 200 in a divided state in the circumferential direction of the wafer 200 without contacting the second surface 204 of the wafer 200.
  • the side surface 205 is a side surface of the wafer 200 in the thickness direction D3.
  • Each holding piece 80 is attachable to and detachable from the side surface 205 of the wafer 200.
  • the heating unit 82 heats the wafer 200.
  • the heating unit 82 is attached to the plurality of holding pieces 80 and heats the wafer 200 via the holding pieces 80. Note that the heating unit 82 may be placed apart from the holding piece 80, or the wafer 200 may be directly heated.
  • the force applying section 77 has a plurality of force applying pieces 81. For example, each force applying piece 81 is fixed to the outer surface of each holding piece 80. Each force applying piece 81 applies a bending moment to the wafer 200 via each holding piece 80 .
  • the central axis of the plurality of holding pieces 80 (wafer 200) is defined as O3.
  • the force-applying piece 81 of interest is referred to as a force-applying piece 81A.
  • a second reference line O4 is defined that is perpendicular to the line connecting the force applying piece 81A and the central axis O3.
  • the force applying piece 81A applies a bending moment about the second reference line O4.
  • the bending axis of the bending moment applied by the force applying piece 81A changes depending on the force applying piece 81 of interest.
  • the force applying section 77 applies force to the wafer 200 via the holding section 76.
  • the force applying unit 77 deforms the first surface 203 and the second surface 204 of the wafer 200.
  • the plurality of force applying pieces 81 included in the force applying section 77 curve the wafer 200 so as to be convex upward or downward.
  • the side surface 205 of the wafer 200 is held by the holding portion 76.
  • force is applied to the wafer 200 via the holding section 76 to deform the wafer 200.
  • the wafer 200 can be reliably straightened by applying force to the wafer 200 whose rigidity has been reduced by heating. Further, the wafer 200 can be straightened while holding the side surface 205 of the wafer 200, which has relatively little influence on the wafer 200.
  • the holding portion 76 has a plurality of holding pieces 80 , and each force applying piece 81 applies a bending moment to the wafer 200 via each holding piece 80 . Therefore, the bending moment applied to desired portions of the wafer 200 in the circumferential direction can be individually adjusted. Note that the holding portion 76 may not be divided into the plurality of holding pieces 80 but may be configured as one piece.
  • the structure of the correction device 75 and the correction method of this embodiment can be modified in various ways as described below.
  • the first modification of the correction device 75 may include a measuring section 11 and a control section CONT in addition to the respective components of the correction device 75 in this embodiment.
  • the control unit CONT heats the wafer 200 using the heating unit 82.
  • the control unit CONT applies force to the wafer 200 through the holding unit 76 using the force applying unit 77 based on the shape measured by the measuring unit 11 while heating the wafer 200 .
  • the wafer 200 can be straightened based on the shape measured by the measuring section 11.
  • the control unit CONT may measure the shape of the wafer 200 using the measuring unit 11 after straightening the wafer 200. If the amount of warpage of the wafer 200 measured by the measurement unit 11 is equal to or greater than the warp threshold, the heating unit 82 heats the wafer 200 and the force applying unit 77 applies the force to the wafer 200 via the holding unit 76. You can give power. In this case, the amount of heating of the wafer 200, the magnitude of the force applied to the wafer 200, etc. can be adjusted depending on the amount of warpage of the wafer 200 that is equal to or greater than the warpage threshold.
  • the straightening device 75 may include a cooling unit that cools the deformed wafer 200. With this configuration, the shape of the wafer 200 that has been deformed (corrected) while being heated by the heating section can be quickly stabilized.
  • a second modification of the straightening device 75 may include a force applying portion that directly applies force to the wafer 200 in place of the force applying portion 77 of the straightening device 75 of this embodiment. That is, the second modification of the correction device 75 includes a holding section 76, a heating section 82, and a force applying section in this second modification. As the force applying section, the force applying section 14, the force applying section 55, etc. can be used.
  • the correction method corresponding to the second modified example of the correction apparatus 75 configured in this way first, the side surface 205 of the wafer 200 is held. Next, the wafer 200 is heated and a force is applied directly to the wafer 200 .
  • the straightening of the wafer 200 is ensured by applying force to the wafer 200 whose rigidity has been reduced by being heated by the heating unit 82. can be done. Further, the wafer 200 can be straightened while holding the side surface 205 of the wafer 200, which has relatively little influence on the wafer 200. Note that in the first to third embodiments and each modification example described above, force is applied to the wafer 200 while heating the wafer 200 before shape correction with a heating unit (such as 13). , the heating section may be omitted.
  • the shape of the wafer 200 may be corrected by applying a force to the wafer 200 using a force applying unit (such as 14) without heating the wafer 200.
  • the exposure device 35 may be provided with the correction device (10, etc.).
  • the shape-corrected wafer 200 may be transported using the transport system 35c of the exposure apparatus 35.
  • the coater/developer device 36 may be provided with the correction device (10, etc.). In this case, the shape-corrected wafer 200 may be transported using the transport system 36b of the coater/developer device 36.
  • the exposure method may be an exposure method in which the wafer 200 is exposed to an energy beam.
  • the exposure method may include exposing the wafer 200 whose shape has been corrected by the correction apparatus to an energy beam.
  • the device manufacturing method using the exposure system may include the following steps. That is, the device manufacturing method includes an exposure step. This exposure step includes developing the exposed wafer 200 using the exposure system. By performing the above steps, the wafer 200 can be exposed with high precision using an exposure system that can reliably correct the wafer 200. This wafer 200 can then be developed.
  • the shape of the reference surface 27a of the mounting device 12 may be a shape other than the shape of a concave portion and a convex portion.
  • the shape of the reference surface may be a saddle shape or the like.
  • the shape of the reference surface 27a of the mounting device 12 may be designed without being based on the deformation caused by the reaction force.
  • the control unit CONT does not have to control the position, heating time, and amount of heating of the wafer 200 by the heating unit 13.
  • the control unit CONT does not have to control the duration of the force applied to the wafer 200 by the force applying unit 14, the amount of force, the position at which the force is applied, and the manner in which the force is applied.
  • the shape of the wafer 200 measured by the measuring section 11 may be a two-dimensional shape of the wafer 200 or the like.
  • the second surface of the wafer 200 is used as a process surface on which various elements are formed, but the first surface 203 of the wafer 200 may also be used as a process surface, and the first surface 203 and the second surface of the wafer 200 may be used as a process surface. Both surfaces 204 may be process surfaces.
  • a straightening method that deforms the wafer by applying a force in a first direction to an outer peripheral portion of the wafer based on a three-dimensional shape of the wafer while heating the wafer.
  • (Additional Claim 5) holding a first portion of the wafer;
  • a correction method that applies force to a second portion of the wafer outside the first portion of the wafer based on the three-dimensional shape of the wafer while heating the wafer.
  • Additional Claim 6 Hold the center of the wafer, A straightening method that applies a force to the wafer by applying a force to the outer peripheral portion of the wafer in a first direction of the wafer while heating the wafer.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
PCT/JP2022/014471 2022-03-25 2022-03-25 矯正装置、露光装置、コータ・デベロッパ装置、露光システム、露光方法、及びデバイス製造方法 Ceased WO2023181367A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP22933506.2A EP4503108A1 (en) 2022-03-25 2022-03-25 Correction apparatus, exposure apparatus, coater/developer apparatus, exposure system, exposure method, and device manufacturing method
PCT/JP2022/014471 WO2023181367A1 (ja) 2022-03-25 2022-03-25 矯正装置、露光装置、コータ・デベロッパ装置、露光システム、露光方法、及びデバイス製造方法
KR1020247031704A KR20240154044A (ko) 2022-03-25 2022-03-25 교정 장치, 노광 장치, 코터·디벨로퍼 장치, 노광 시스템, 노광 방법, 및 디바이스 제조 방법
CN202280093911.6A CN118901128A (zh) 2022-03-25 2022-03-25 矫正装置、曝光装置、涂布显影装置、曝光系统、曝光方法、及元件制造方法
JP2024509667A JPWO2023181367A1 (https=) 2022-03-25 2022-03-25
TW112110017A TWI874929B (zh) 2022-03-25 2023-03-17 矯正裝置、曝光裝置、塗佈顯影裝置、曝光系統、曝光方法、及元件製造方法
US18/889,608 US20250014918A1 (en) 2022-03-25 2024-09-19 Correction apparatus, exposure apparatus, coater and developer apparatus, exposure system, exposure method, and device manufacturing method

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CN118901128A (zh) 2024-11-05
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TW202401143A (zh) 2024-01-01
KR20240154044A (ko) 2024-10-24
EP4503108A1 (en) 2025-02-05
TWI874929B (zh) 2025-03-01

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