WO2023179081A1 - 一种拉晶方法及单晶炉 - Google Patents

一种拉晶方法及单晶炉 Download PDF

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Publication number
WO2023179081A1
WO2023179081A1 PCT/CN2022/135602 CN2022135602W WO2023179081A1 WO 2023179081 A1 WO2023179081 A1 WO 2023179081A1 CN 2022135602 W CN2022135602 W CN 2022135602W WO 2023179081 A1 WO2023179081 A1 WO 2023179081A1
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Prior art keywords
limiting member
limiting
limiter
single crystal
auxiliary chamber
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PCT/CN2022/135602
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English (en)
French (fr)
Inventor
朱永刚
董升
张伟建
李侨
白锋
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隆基绿能科技股份有限公司
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Publication of WO2023179081A1 publication Critical patent/WO2023179081A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of single crystal furnace crystal pulling, and in particular to a crystal pulling method and a single crystal furnace.
  • the Czochralski method is widely used to produce single crystal silicon rods
  • the single crystal furnace is the main equipment for the production of single crystal silicon rods using the Czochralski method.
  • the seed crystal is usually inserted into the crucible, and the seed crystal is first used for seeding to form a section of fine crystals, and then a single crystal silicon rod of equal diameter is formed through operations such as shoulder placement and shoulder rotation.
  • the single crystal silicon rod since the single crystal silicon rod only relies on the fine crystals on the upper part to be suspended and fixed, when the single crystal silicon rod has a large mass or encounters equipment shaking, etc., the single crystal silicon rod is easy to break and fall from the fine crystal. This may cause serious consequences such as crucible damage or even furnace explosion.
  • sensors are usually used to monitor the status of the single crystal silicon rod.
  • the sensor detects the abnormal phenomenon and then controls the anti-drop device to turn on.
  • This application provides a crystal pulling method and a single crystal furnace to solve the problem that in the prior art, the sensor and the anti-dropping device are used to cooperate. Due to the communication delay between the sensor and the anti-dropping device, the anti-dropping device cannot be opened in time. There is a risk of single crystal silicon rods breaking and falling.
  • the embodiment of the present application provides a crystal pulling method for pulling a single crystal silicon rod.
  • the single crystal silicon rod includes a seed crystal and an equal-diameter part led out through the seed crystal.
  • the equal-diameter part is close to the One end of the seed crystal extends along its own radial direction to form a protruding portion, and the diameter of the protruding portion is greater than the diameter of the equal-diameter portion.
  • the crystal pulling method includes:
  • the first limiting member and the second limiting member are controlled to be in a first relative position, wherein the first relative position indicates that the distance between the first limiting member and the second limiting member is greater than the protrusion.
  • the first limiting member and the second limiting member are controlled to be in a second relative position, where the second relative position represents the first limiting member and the second limiting member.
  • the distance between the second limiting parts is smaller than the diameter of the protruding portion and larger than the position of the equal-diameter portion.
  • obtaining the state parameters of the single crystal silicon rod includes: obtaining the crystal pulling time of the single crystal silicon rod, wherein the crystal pulling time is consistent with the shape and position of the single crystal silicon rod. correspond;
  • Embodiments of the present application also provide a single crystal furnace, which includes an auxiliary chamber and a limiting device provided in the auxiliary chamber;
  • the limiting device includes a first limiting member and a second limiting member, the first limiting member is at least partially located in the auxiliary chamber, and the second limiting member is at least partially located in the auxiliary chamber;
  • the first limiter and the second limiter are respectively connected to the side walls of the auxiliary chamber, and the first limiter and the second limiter are arranged oppositely;
  • the distance between the first limiter and the second limiter is greater than the diameter of the protrusion.
  • the distance between the first limiter and the second limiter is smaller than the diameter of the protrusion. , and is larger than the diameter of the equal diameter portion.
  • the limiting device further includes a driving mechanism
  • the first limiter and the second limiter are respectively disposed on the side walls of the auxiliary chamber. Along the radial direction of the auxiliary chamber, the first limiter and the second limiter are The parts are respectively slidingly connected with the auxiliary chamber;
  • the driving mechanism is respectively connected with the first limiting member and the second limiting member to drive the first limiting member and the second limiting member respectively with the auxiliary chamber in the radial direction.
  • the auxiliary chambers slide relative to each other.
  • the driving mechanism includes a cylinder, a first transmission member and a second transmission member;
  • the first transmission member is connected to the power output end of the cylinder and the first limiting member respectively;
  • the second transmission member is connected to the cylinder and the second limiting member respectively.
  • the driving mechanism also includes a floating connection block and a floating joint
  • the floating connection block is fixedly connected to the floating joint
  • the floating connection block is connected to the first transmission member and has a clearance fit
  • the power output end of the cylinder is connected with the floating joint and has a clearance fit.
  • the limiting device further includes a mounting bracket
  • the mounting bracket is fixedly connected to the auxiliary chamber
  • the installation bracket includes a guide installation plate, a slide rail and a guide assembly
  • the guide assembly is connected to the first transmission member and the second transmission member respectively;
  • One side of the slide rail is slidingly connected to the guide assembly, the other side of the slide rail is fixedly connected to the guide mounting plate, and the length direction of the slide rail is consistent with the power direction of the cylinder.
  • the limiting device further includes a third limiting member, a fourth limiting member, a fifth limiting member and a sixth limiting member;
  • the mounting bracket also includes a first limiting baffle and a second limiting baffle
  • the guide mounting plate is fixedly connected to the auxiliary chamber through the first limiting baffle and the second limiting baffle;
  • the third limiting member and the fourth limiting member are respectively connected to the first transmission member, and the third limiting member and the fourth limiting member are connected to the first limiting baffle. Relative settings;
  • the fifth limiting member and the sixth limiting member are respectively connected to the second transmission member, and the fifth limiting member and the sixth limiting member are connected to the second limiting baffle. Relative settings;
  • the third limiter abuts the first limiter, and the fifth limiter is in contact with the first limiter.
  • the component is in contact with the second limiting baffle;
  • the fourth limiting member abuts the first limiting baffle, and the sixth limiting member The piece is in contact with the second limiting baffle.
  • the limiting device further includes a first flange, a first support member, a second flange and a second support member;
  • the first flange and the second flange are arranged outside the auxiliary chamber and are fixedly connected to the side walls of the auxiliary chamber respectively;
  • the first support member and the second support member are provided in the auxiliary chamber and are fixedly connected to the side walls of the auxiliary chamber respectively;
  • the first limiting member is passed through the first flange, the side wall of the auxiliary chamber and the first support member in sequence;
  • the second limiting member is passed through the second flange, the side wall of the auxiliary chamber and the second supporting member in sequence;
  • a first sleeve is provided between the first support member and the first limiting member
  • a second sleeve is provided between the second support member and the second limiting member.
  • the limiting device further includes a first bellows and a second bellows;
  • the first bellows is disposed between the first flange and the first transmission member, and both ends of the first bellows are fixed to the first flange and the first transmission member respectively. connect;
  • the second bellows is disposed between the second flange and the second transmission member, and both ends of the second bellows are fixed to the second flange and the second transmission member respectively. connect.
  • the single crystal furnace includes a plurality of the limiting devices
  • a plurality of the limiting devices are arranged at intervals along the length direction of the auxiliary chamber.
  • the crystal pulling method is used to pull a single crystal silicon rod.
  • the single crystal silicon rod includes a seed crystal and an equal-diameter portion led through the seed crystal.
  • the equal-diameter portion extends along its own radial direction near one end of the seed crystal.
  • the protruding portion has a diameter greater than the diameter of the equal-diameter portion.
  • the crystal pulling method includes: controlling the first limiting member and the second limiting member to be in a first relative position, where the first relative position represents the first limiting member.
  • the positioning member is in a second relative position, wherein the second relative position represents the position when the distance between the first limiting member and the second limiting member is less than the diameter of the protruding portion and greater than the diameter of the equal-diameter portion.
  • the first limiter and the second limiter are in the first relative position, the distance between the first end of the first limiter and the first end of the second limiter is greater than the diameter of the protrusion. It will hinder the lifting of single crystal silicon rods.
  • the shape and position information of the single crystal silicon rod can be obtained according to the state parameters of the single crystal silicon rod.
  • the first limiter and the second limiter can be controlled.
  • the positioning member is in the second relative position, at this time, the distance between the first end of the first limiting member and the first end of the second limiting member is smaller than the diameter of the protruding portion and larger than the diameter of the equal diameter portion,
  • the first limiting member and the second limiting member can support the protruding portion to prevent it from continuing to fall when the single crystal silicon rod breaks and falls.
  • the first limiting member and the second limiting member can continuously protect the single crystal silicon rod while ensuring the normal growth of the equal diameter portion.
  • Figure 1 shows a step flow chart of a crystal pulling method according to an embodiment of the present application
  • Figure 2 shows a schematic structural diagram of a single crystal furnace according to an embodiment of the present application
  • Figure 3 shows a schematic structural diagram of a limiting device according to an embodiment of the present application
  • Figure 4 shows a schematic structural diagram of a single crystal silicon rod according to an embodiment of the present application.
  • 10-monocrystalline silicon rod 20-auxiliary chamber; 30-limiting device; 101-seed crystal; 102-equal diameter part; 103-protruding part; 301-first limiter; 302-second limiter ; 303-driving mechanism; 304-mounting bracket; 305-third limiter; 306-fourth limiter; 307-fifth limiter; 308-sixth limiter; 309-first flange; 310-first support member; 311-second flange; 312-second support member; 313-first sleeve; 314-first bellows; 315-second bellows; 3031-cylinder; 3032-first Transmission part; 3033-second transmission part; 3034-floating connection block; 3035-floating joint; 3041-guide mounting plate; 3042-slide rail; 3043-guide assembly; 3044-first limit baffle; 3045-second Limit baffle.
  • the crystal pulling method disclosed in the embodiment of the present application is used to pull single crystal silicon rods.
  • the single crystal The silicon rod includes a seed crystal and an equal-diameter portion led through the seed crystal.
  • One end of the equal-diameter portion close to the seed crystal extends along its own radial direction to form a protruding portion.
  • the diameter of the protruding portion is larger than the equal-diameter portion. The diameter of the diameter.
  • the diameter of the obtained single crystal silicon rod needs to be slightly larger than the target pulling diameter.
  • the corresponding diameter can be obtained by controlling the rotation speed and pulling speed. Crystal rod.
  • Step 101 Control the first limiting member and the second limiting member to be in a first relative position, wherein the first relative position indicates that the distance between the first limiting member and the second limiting member is greater than The diameter of the protrusion is the position of the protrusion.
  • the single crystal furnace has a main furnace chamber and an auxiliary chamber.
  • the auxiliary chamber is located above the main furnace chamber, and the auxiliary chamber is connected with the main furnace chamber.
  • the single crystal silicon material is first heated to a molten state in the crucible of the main furnace chamber.
  • the pulling device extends into the main furnace chamber through the auxiliary chamber.
  • the pulling device A seed crystal is provided on the top, and the seed crystal extends into the crucible to achieve seeding.
  • the pulling device drives the seed crystal to continue to rise, and the length of the crystal rod gradually increases. Under the pulling of the pulling device, it moves from the main furnace chamber into the auxiliary chamber.
  • a first limiting member and a second limiting member are provided in the auxiliary chamber.
  • the first limiting member and the second limiting member are controlled to be in the first relative position, and the third limiting member can be manually controlled.
  • the first limiter and the second limiter can also be controlled by the driving mechanism. For example, during the crystal pulling preparation stage, the operator manually controls the first limiting member and the second limiting member to be in the first relative position; or when the crystal pulling equipment is in the preparation stage, the driving mechanism automatically controls the first limiting member The member and the second limiting member are in a first relative position.
  • the distance between the first limiter and the second limiter is greater than the diameter of the protrusion, and the protrusion of the single crystal silicon rod can smoothly pass through the position of the first limiter and the second limiter, It will not affect the normal progress of the crystal pulling process.
  • Step 102 Obtain the state parameters of the single crystal silicon rod.
  • the state parameters of the single crystal silicon rod can include the crystal pulling time, the crystal pulling weight, etc. According to the state parameters, the shape and moving position of the single crystal silicon rod can be judged.
  • Step 103 When the state parameter meets the preset condition, control the first limiting member and the second limiting member to be in a second relative position, where the second relative position represents the first limiting member.
  • the distance between the positioning member and the second limiting member is smaller than the diameter of the protruding portion and larger than the position of the equal diameter portion.
  • the preset conditions correspond to the status parameters.
  • the obtained status parameter of the single crystal silicon rod is the crystal pulling time.
  • the corresponding preset condition can be the preset crystal pulling time, and the position of the protruding portion of the single crystal silicon rod in the auxiliary chamber can be determined according to the crystal pulling time.
  • the preset condition can be set to the position where the protrusion passes through the first limiter and the second limiter. The crystal pulling time at the position.
  • the state parameters of the single crystal silicon rod meet the preset conditions, and the first limiting member and the second limiting member can be controlled to be in the second relative position.
  • the first limiting member and the second limiting member can be controlled manually or through a driving mechanism.
  • the distance between the first limiting part and the second limiting part is smaller than the diameter of the protruding part and larger than the diameter of the equal diameter part.
  • the equal-diameter part of the single crystal silicon rod can smoothly pass through the first and second limiters, without affecting the normal progress of the crystal pulling process; when the single crystal silicon rod breaks and falls from the seed crystal, When the first limiter and the second limiter are in the second relative position, they can form a support for the protruding part, and the protrusion cannot pass through the position of the first limiter and the second limiter, which can avoid the single crystal
  • the silicon rod continued to fall and damage the crucible to prevent safety accidents.
  • the shape and position information of the single crystal silicon rod can be obtained according to the state parameters of the single crystal silicon rod.
  • the first limiter can be controlled.
  • the limiter and the second limiter are in the second relative position, at this time, the distance between the first end of the first limiter and the first end of the second limiter is less than the diameter of the protrusion, and Larger than the diameter of the equal-diameter part, the first limiting part and the second limiting part can support the protruding part to prevent it from continuing to fall when the single crystal silicon rod breaks and falls.
  • the first limiting member and the second limiting member can continuously protect the single crystal silicon rod while ensuring the normal growth of the equal diameter portion. There is no need to rely on sensors, which avoids the risk of communication delays causing the anti-falling device to fail to open in time; moreover, the first limiter and the second limiter do not need to move with the monocrystalline silicon rod, and the structure is simple and durable, reducing production costs. .
  • obtaining the state parameters of the single crystal silicon rod in step 102 includes:
  • the state parameter of the single crystal silicon rod can be the crystal pulling time.
  • the crystal pulling time corresponds to the shape and position of the single crystal silicon rod. According to the crystal pulling time, the position of the protruding part of the single crystal silicon rod in the auxiliary chamber can be judged. For example, when the crystal pulling process continues for the first crystal pulling time, the growth of the corresponding protruding portion of the single crystal silicon rod is completed, and the protruding portion is still located in the main furnace chamber. When the crystal pulling process continues for the second crystal pulling time, the corresponding protruding portion of the single crystal silicon rod enters the auxiliary chamber, but has not yet passed the position of the first limiting member and the second limiting member.
  • the protruding portion of the corresponding single crystal silicon rod passes through the position of the first limiting member and the second limiting member.
  • the operator or the crystal pulling equipment can determine whether the first limiting member and the second limiting member should be in the first relative position or the second relative position according to the crystal pulling time.
  • the state parameter of the single crystal silicon rod can be the weight of the single crystal silicon rod.
  • the weight of the single crystal silicon rod corresponds to the shape and position of the single crystal silicon rod. According to the weight of the single crystal silicon rod, the protruding part of the single crystal silicon rod can be judged. Position in the auxiliary room. For example, when the single crystal silicon rod is at the first weight, the growth of the corresponding protruding portion of the single crystal silicon rod is completed, and the protruding portion is still located in the main furnace chamber. When the single crystal silicon rod is at the second weight, the corresponding protruding portion of the single crystal silicon rod enters the auxiliary chamber, but has not yet passed the position of the first limiting member and the second limiting member.
  • the corresponding protruding portion of the single crystal silicon rod passes through the position of the first limiting member and the second limiting member.
  • the operator or the crystal pulling equipment can determine whether the first limiting member and the second limiting member should be in the first relative position or the second relative position based on the weight of the single crystal silicon rod.
  • the state parameter of the single crystal silicon rod can also be the position information of the single crystal silicon rod, and the position information of the single crystal silicon rod can be obtained directly through a sensor.
  • the position information of the single crystal silicon rod may specifically include the position information of the protruding portion or the position information of the equal diameter portion. Obtaining the position of the protruding part can directly determine whether the protruding part passes the limiting device. Obtaining the position information of the equal-diameter part can determine the position of the protruding part based on the position of the equal-diameter part, and then determine whether the protruding part passes the limiting device.
  • the position information of the protruding part of the single crystal silicon rod can be directly obtained through a sensor.
  • the sensor can be arranged in the auxiliary chamber, close to the first limiting member and the second limiting member, in the single crystal silicon rod.
  • the sensor can be a photoelectric sensor, a Hall sensor, etc.
  • the first limiting member and the second limiting member can be controlled to be in the second relative position.
  • the number of sensors can be selected according to the number of first limiting parts and second limiting parts.
  • inventions of the present application also provide a single crystal furnace.
  • the single crystal furnace includes an auxiliary chamber 20 and a limiting device 30 provided in the auxiliary chamber 20;
  • the limiting device 30 includes a first limiting member 301 and a second limiting member 302.
  • the first limiting member 301 is at least partially located in the auxiliary chamber 20, and the second limiting member 302 is at least partially located in the auxiliary chamber 20.
  • the first limiter 301 and the second limiter 302 are respectively connected to the side walls of the auxiliary chamber 20, and the first limiter 301 and the second limiter 302 are arranged opposite to each other.
  • the distance between the first limiting member 301 and the second limiting member 302 is greater than the The diameter of the protruding portion 103; when the first limiting member 301 and the second limiting member 302 are in the second relative position, the diameter of the first limiting member 301 and the second limiting member 302 is The distance between them is smaller than the diameter of the protruding portion 103 and larger than the diameter of the equal-diameter portion 102 .
  • the single crystal furnace has a main furnace chamber and an auxiliary chamber 20 .
  • the auxiliary chamber 20 is located above the main furnace chamber, and the auxiliary chamber 20 is connected with the main furnace chamber.
  • the single crystal silicon material is first heated to a molten state in the crucible of the main furnace chamber.
  • the pulling device extends into the main furnace chamber through the auxiliary chamber 20 to pull
  • the device is provided with a seed crystal 101, and the seed crystal 101 extends into the crucible to achieve seeding.
  • the pulling device drives the seed crystal 101 to continue to rise, and the length of the crystal rod gradually increases. Under the pulling of the pulling device, the seed crystal 101 enters the auxiliary chamber 20 from the main furnace chamber.
  • the first limiting member 301 and the second limiting member 302 are at least partially located in the auxiliary chamber 20 .
  • the first limiting member 301 and the second limiting member 302 are arranged opposite to form a limiting space in the auxiliary chamber 20 .
  • the first limiter 301 and the second limiter 302 can be made of high-temperature resistant materials to avoid damage to the first limiter 301 and the second limiter 302 due to high temperatures in the auxiliary chamber 20 .
  • the shape of the limiting space is determined by the shapes of the first limiting member 301 and the second limiting member 302.
  • the limiting space formed is It is circular, and the circular limiting space surrounds the monocrystalline silicon rod 10 to achieve limiting;
  • the first limiting member 301 and the second limiting member 302 are straight rods, and the ends of the straight rods are arranged opposite to form a semi-open space. Only the ends of the first limiting member 301 and the second limiting member 302 have limiting functions.
  • the first limiter 301 and the second limiter 302 have a first relative position and a second relative position.
  • the first limiter 301 and the second limiter 302 are respectively connected to the side walls of the auxiliary chamber 20. Specifically, they can be
  • the first limiting member 301 and the second limiting member 302 can be switched between the first relative position and the second relative position through hinged connection, sliding connection, snapping, etc.
  • it can be controlled manually or through the driving mechanism 303 .
  • the distance between the first limiting member 301 and the second limiting member 302 is greater than the diameter of the protruding portion 103, so that the first limiting member 301 and the second limiting member 302 are in the first relative position.
  • the size of the limiting space formed by the positioning member 301 and the second limiting member 302 is also larger than the diameter of the protruding portion 103.
  • the protruding portion 103 of the single crystal silicon rod 10 can smoothly pass through the first limiting member 301 and the second limiting member. The position of the component 302 will not affect the normal progress of the crystal pulling process.
  • the distance between the first limiting member 301 and the second limiting member 302 is smaller than the diameter of the protruding portion 103 and larger than the equal diameter portion. 102 in diameter.
  • the equal diameter portion 102 of the single crystal silicon rod 10 can smoothly pass through the position of the first limiting member 301 and the second limiting member 302 without affecting the normal progress of the crystal pulling process; when the single crystal silicon rod 10 is removed from the seed
  • the first limiting member 301 and the second limiting member 302 at the second relative position can support the protruding portion 103, and the protruding portion 103 cannot pass through the first limiting member 301 and the second limiting member 302.
  • the position of the second limiter 302 can prevent the monocrystalline silicon rod 10 from continuously falling and damaging the crucible, thereby preventing safety accidents.
  • the first limiting member 301 and the second limiting member 302 can continuously protect the single crystal silicon rod 10 while ensuring the normal growth of the equal-diameter portion 102 .
  • the limiting device 30 further includes a driving mechanism 303; the first limiting member 301 and the second limiting member 302 are respectively penetrated on the side of the auxiliary chamber 20. wall, along the radial direction of the auxiliary chamber 20, the first limiting member 301 and the second limiting member 302 are respectively slidingly connected with the auxiliary chamber 20; the driving mechanism 303 is respectively connected with the first The limiting member 301 and the second limiting member 302 are connected to drive the first limiting member 301 and the second limiting member 302 to connect with the auxiliary chamber 20 along the radial direction of the auxiliary chamber 20 respectively. relative sliding.
  • the driving mechanism 303 controls the first limiting member 301 and the second limiting member 302 to be in the first relative position and the second relative position. Switch between locations.
  • the driving mechanism 303 can be installed inside the auxiliary chamber 20 or outside the auxiliary chamber 20 .
  • a cooling device can be provided at the driving mechanism 303 to avoid the high temperature from affecting the driving mechanism 303.
  • the cooling device may be a liquid cooling pipeline surrounding the driving mechanism 303, or may be a fin tube or semiconductor refrigeration fin.
  • the driving mechanism 303 is disposed outside the auxiliary chamber 20, which can prevent high temperature from affecting the performance of the driving mechanism 303.
  • the driving mechanism 303 may be a motor, a cylinder 3031 or other devices.
  • the side wall of the auxiliary chamber 20 is provided with a through hole.
  • the first limiting member 301 and the second limiting member 302 are respectively penetrated through the side wall of the auxiliary chamber 20 and are slidingly connected to the auxiliary chamber 20 respectively.
  • the first limiting member 301 is partially exposed outside the auxiliary chamber 20 and is connected to the driving mechanism 303.
  • the specific connection method may be welding, snapping, etc.; similarly, the second limiting member 302 is also partially exposed outside the auxiliary chamber 20. , and is connected to the driving mechanism 303.
  • the specific connection method may be welding, snapping, etc.
  • Under the control of the driving mechanism 303 the first limiting member 301 and the second limiting member 302 respectively slide relative to the auxiliary chamber 20 along the radial direction of the auxiliary chamber 20 to achieve switching between the first relative position and the second relative position. .
  • the driving mechanism 303 is disposed in the auxiliary chamber 20, and the first limiting member 301 and the second limiting member 302 are also disposed inside the auxiliary chamber 20, and are respectively connected with the auxiliary chamber. 20' side wall hinges.
  • the driving mechanism 303 controls the first limiting member 301 and the second limiting member 302 to be in the first relative position, the first limiting member 301 and the second limiting member 302 are folded to the side wall of the auxiliary chamber 20 through the hinge axis.
  • the distance between the first limiter 301 and the second limiter 302 is greater than the diameter of the protrusion 103 , and the protrusion 103 of the single crystal silicon rod 10 can smoothly pass through the first limiter 301 and the second limiter 302 .
  • the position of the limiting member 302 will not affect the normal progress of the crystal pulling process.
  • the first limiting member 301 and the second limiting member 302 use the hinge shaft to rotate from the folded state to the unfolded state.
  • the distance between the first limiting member 301 and the second limiting member 302 is smaller than the diameter of the protruding portion 103 and larger than the diameter of the equal-diameter portion 102 .
  • the equal diameter portion 102 of the single crystal silicon rod 10 can smoothly pass through the position of the first limiting member 301 and the second limiting member 302 without affecting the normal progress of the crystal pulling process; when the single crystal silicon rod 10 is removed from the seed When the crystal 101 breaks and falls, the first limiting member 301 and the second limiting member 302 at the second relative position can support the protruding portion 103, and the protruding portion 103 cannot pass through the first limiting member 301 and the second limiting member 302.
  • the position of the second limiter 302 can prevent the monocrystalline silicon rod 10 from falling continuously and prevent safety accidents.
  • the driving mechanism 303 includes a cylinder 3031, a first transmission member 3032 and a second transmission member 3033; the first transmission member 3032 is connected to the power output end of the cylinder 3031 and the power output end of the cylinder 3031, respectively.
  • the first limiting member 301 is connected; the second transmission member 3033 is connected to the cylinder 3031 and the second limiting member 302 respectively.
  • a cylinder 3031 is used to drive the first limiting member 301 and the second limiting member 302.
  • the driving mechanism 303 includes a cylinder 3031, a first limiting member 303, and a first limiting member 303.
  • the cylinder 3031 is fixed on the second transmission member 3033, and the connection method between the cylinder 3031 and the second transmission member 3033 can be welding, bolting, etc.; the power output end of the cylinder 3031 is connected to the first transmission member 3032, and the first transmission member 3032 is Connected to the first limiting member 301, the connection method may also be welding, bolting, etc.
  • the power output end of the cylinder 3031 moves telescopically, it will drive the first transmission member 3032 and the second transmission member to move relative to each other, thereby controlling the movement of the first limiter 301 and the second limiter 302 to achieve the first relative position and the second position. Switch between relative positions.
  • the cylinder 3031 is used to drive the first limiting member 301 and the second limiting member 302, which has a simple structure and strong stability.
  • the driving mechanism 303 further includes a floating connection block 3034 and a floating joint 3035; the floating connection block 3034 is fixedly connected to the floating joint 3035; the floating connection block 3034 is fixedly connected to the floating joint 3035.
  • the first transmission member 3032 is connected with a clearance fit; the power output end of the cylinder 3031 is connected with the floating joint 3035 with a clearance fit.
  • the power output end of the cylinder 3031 is connected to the floating joint 3035 and has a clearance fit.
  • the cylinder 3031 drives the first transmission member 3032.
  • the gap between the floating connecting block 3034 and the first transmission member 3032, as well as the gap between the power output end of the cylinder 3031 and the floating joint 3035 can dynamically adjust the force application position of the power output end of the cylinder 3031. This avoids friction between the power output end of the cylinder 3031 and the first transmission member 3032, and does not affect the normal power output of the cylinder 3031, thereby improving the durability of the driving mechanism 303.
  • the limiting device 30 further includes a mounting bracket 304; the mounting bracket 304 is fixedly connected to the auxiliary chamber 20; the mounting bracket 304 includes a guide mounting plate 3041, Slide rail 3042 and guide assembly 3043; the guide assembly 3043 is connected to the first transmission member 3032 and the second transmission member 3033 respectively; one side of the slide rail 3042 is slidingly connected to the guide assembly 3043, so The other side of the slide rail 3042 is fixedly connected to the guide mounting plate 3041, and the length direction of the slide rail 3042 is consistent with the power direction of the cylinder 3031.
  • a mounting bracket 304 is also provided on the outer side wall of the auxiliary chamber 20.
  • the mounting bracket 304 is fixedly connected to the outer side wall of the auxiliary chamber 20 and can be fixed by welding, bolting or other methods.
  • the installation bracket 304 includes a guide installation plate 3041, a slide rail 3042 and a guide assembly 3043.
  • the guide installation plate 3041 is fixed on the outer wall of the auxiliary chamber 20.
  • the guide installation plate 3041 is provided with a slide rail 3042, and the length direction of the slide rail 3042 is consistent with the cylinder.
  • the power direction of 3031 is the same.
  • the first transmission member 3032 and the second transmission member 3033 are respectively connected to the guide assembly 3043, and slide along the length direction of the slide rail 3042 through the guide assembly 3043.
  • the guide assembly 3043 can be a pulley, a slide, a slider, etc.
  • the guide mounting plate 3041 Since the guide mounting plate 3041 is fixed to the auxiliary chamber 20, it can provide stable support.
  • the cylinder 3031 drives the first transmission member 3032 and the second transmission member 3033 to move, it can move along the slide rail 3042 through the guide assembly 3043, and can move the first transmission member 3032 and the second transmission member 3033.
  • the movement directions of the transmission member 3032 and the second transmission member 3033 are limited to improve the smoothness of their operation.
  • the limiting device 30 further includes a third limiting member 305 , a fourth limiting member 306 , a fifth limiting member 307 and a sixth limiting member 308 ;
  • the mounting bracket 304 also includes a first limiting baffle 3044 and a second limiting baffle 3045; the guide mounting plate 3041 is connected to the auxiliary chamber through the first limiting baffle 3044 and the second limiting baffle 3045.
  • the third limiting member 305 and the fourth limiting member 306 are respectively connected to the first transmission member 3032, and the third limiting member 305 and the fourth limiting member 306 Set opposite to the first limiting baffle 3044; the fifth limiting member 307 and the sixth limiting member 308 are respectively connected to the second transmission member 3033, and the fifth limiting member 307
  • the sixth limiting member 308 and the second limiting baffle 3045 are arranged oppositely; when the first limiting member 301 and the second limiting member 302 are in the first relative position, the The third limiter 305 is in contact with the first limiter 3044, and the fifth limiter 307 is in contact with the second limiter 3045; in the first limiter 301 When the second limiting member 302 is in the second relative position, the fourth limiting member 306 is in contact with the first limiting baffle 3044, and the sixth limiting member 308 is in contact with the first limiting member 3044.
  • the second limiting baffle 3045 is in contact.
  • the driving mechanism 303 drives the first limiting member 301 and the second limiting member 302 to slide relative to the side wall of the auxiliary chamber 20 .
  • the mounting bracket 304 includes a guide mounting plate 3041, a first limiting baffle 3044 and a second limiting baffle 3045. Both ends of the guide mounting plate 3041 are respectively fixed to the first limiting baffle 3044 and the second limiting baffle 3045. , the guide mounting plate 3041, the first limiting baffle 3044 and the second limiting baffle 3045 can adopt an integrated structure.
  • the guide mounting plate 3041 is fixedly connected to the auxiliary chamber 20 through the first limiting baffle 3044 and the second limiting baffle 3045 .
  • the limiting device 30 also includes a third limiting member 305, a fourth limiting member 306, a fifth limiting member 307 and a sixth limiting member 308, wherein the first transmission member 3032 has a horizontal part and a vertical part, and the horizontal part 3032 has a horizontal part and a vertical part.
  • the third limiter 305 and the fourth limiter 306 are connected to the vertical portion of the first transmission member 3032,
  • the specific connection method can be snap connection or threaded connection.
  • the first limiting baffle 3044 is provided with a through hole.
  • the third limiting member 305 passes through the through hole and is slidably connected to the first limiting baffle 3044.
  • the third limiting member 305 is provided close to one end of the first limiting baffle 3044.
  • the fourth limiting member 306 is arranged opposite to the first limiting baffle 3044.
  • the second transmission member 3033 also has a horizontal part and a vertical part.
  • the horizontal part is used to connect with the cylinder 3031.
  • the vertical part is opposite to the second limiting baffle 3045.
  • the fifth limiting part 307 and the sixth limiting part 308 are connected.
  • the specific connection method may be snap connection or threaded connection.
  • the second limiting baffle 3045 is provided with a through hole.
  • the fifth limiting member 307 passes through the through hole and is slidably connected to the second limiting baffle 3045.
  • the fifth limiting member 307 is disposed close to one end of the first limiting baffle 3044.
  • There is a big head structure and the diameter of the big head structure is larger than the diameter of the through hole.
  • the sixth limiting member 308 is arranged opposite to the first limiting baffle 3044.
  • the large end structure of the third limiting member 305 abuts the first limiting baffle 3044, and the large end structure of the fifth limiting member 307 It contacts the second limiting baffle 3045 to achieve position limiting.
  • the first limiter 301 and the second limiter 302 slide in the direction away from the auxiliary chamber 20, due to the limiting effect of the third limiter 305 and the fifth limiter 307, they will stop after sliding for a certain distance. , avoiding the risk of the first limiting member 301 and the second limiting member 302 directly sliding out of the auxiliary chamber 20 .
  • the fourth limiting member 306 abuts the first limiting baffle 3044, and the sixth limiting member 308 contacts the second limiting member 304.
  • the position baffle 3045 is in contact with each other to realize position limiting.
  • the first limiter 301 and the second limiter 302 slide toward the auxiliary chamber 20, due to the limiting effect of the fourth limiter 306 and the sixth limiter 308, they will stop after sliding for a certain distance. , to avoid the first limiter 301 and the second limiter 302 from excessively extending into the auxiliary chamber 20 and rubbing against the single crystal silicon rod 10, thereby affecting the normal crystal pulling process.
  • the limiting device 30 also includes a first flange 309, a first support member 310, a second flange 311 and a second support member 312; the first flange 309 and The second flange 311 is disposed outside the auxiliary chamber 20 and is fixedly connected to the side wall of the auxiliary chamber 20 respectively; the first support member 310 and the second support member 312 are disposed on the auxiliary chamber 20 .
  • the first limiting member 301 is sequentially penetrated through the first flange 309, the side wall of the auxiliary chamber 20 and the third A support member 310; the second limiting member 302 is passed through the second flange 311, the side wall of the auxiliary chamber 20 and the second support member 312 in sequence; the first support member 310 and A first sleeve 313 is provided between the first limiting members 301; a second sleeve is provided between the second supporting member 312 and the second limiting member 302.
  • the first flange 309 and the first support member 310 are respectively located on both sides of the side wall of the auxiliary chamber 20, and the first flange 309, the side wall of the auxiliary chamber 20 and the first support member 310 are connected. , forming a sliding support space for the first limiting member 301.
  • the second flange 311 and the second support member 312 are respectively located on both sides of the side wall of the auxiliary chamber 20.
  • the second flange 311, the side wall of the auxiliary chamber 20 and the second support member 312 are connected to form a sliding movement of the second limiting member 302. Support space.
  • the driving mechanism 303 drives the first limiter 301 and the second limiter 302 in the sliding support space. Slide to switch between the first relative position and the second relative position.
  • water cooling channels are also provided inside the first flange 309, the second flange 311, the first support member 310 and the second support member 312, which can cool down the device in time. Improve the stability of equipment operation.
  • a sealing ring is also provided at the flange, which further improves the sealing performance of the device.
  • the first support member 310 and the second support member 312 are made of metal.
  • the first supporting member 310 and the first limiting member 301 are A first sleeve 313 is provided between them; a second sleeve is provided between the second support member 312 and the second limiting member 302 .
  • the first sleeve 313 or the second sleeve is made of wear-resistant plastic material such as polyformaldehyde.
  • the limiting device 30 further includes a first bellows 314 and a second bellows 315 ; the first bellows 314 is provided between the first flange 309 and the third bellows 314 . between a transmission member 3032, and both ends of the first bellows 314 are fixedly connected to the first flange 309 and the first transmission member 3032 respectively; the second bellows 315 is provided on the first between the second flange 311 and the second transmission member 3033, and both ends of the second bellows 315 are fixedly connected to the second flange 311 and the second transmission member 3033 respectively.
  • the first transmission member 3032 drives the first limiting member 301 and the first flange 309 to slide relative to each other, and the distance between the first transmission member 3032 and the first flange 309 changes.
  • a first bellows 314 can be provided between the first flange 309 and the first transmission member 3032.
  • the bellows is made of a plurality of thin hollow membranes ( Wave) sheet, a highly bendable and stretchable metal tube made by precision welding.
  • the first bellows 314 is sleeved on the first limiting member 301, and both ends of the first bellows 314 are fixedly connected to the first flange 309 and the first transmission member 3032 respectively.
  • the first bellows 314 can be extended or shortened accordingly, ensuring the sealing of the auxiliary chamber 20 during the sliding process.
  • a second bellows 315 can be provided between the second flange 311 and the second transmission member 3033 .
  • the second bellows 315 is sleeved on the second limiting member 302, and both ends of the second bellows 315 are fixedly connected to the second flange 311 and the second transmission member 3033 respectively.
  • the second bellows 315 can be extended or shortened accordingly, ensuring the airtightness of the auxiliary chamber 20 during the sliding process.
  • the single crystal furnace includes a plurality of limiting devices 30 ; the plurality of limiting devices 30 are spaced apart along the length direction of the auxiliary chamber 20 .
  • a plurality of limiting devices 30 are provided on the auxiliary chamber 20 , and the plurality of limiting devices 30 are spaced apart along the length direction of the auxiliary chamber 20 .
  • the limiting device 30 first install multiple limiting devices 30 on the reserved flange of the auxiliary chamber 20, and adjust the third limiting member 305, the fourth limiting member 306, and the third limiting member 305 of each limiting device 30.
  • the positions of the fifth limiter 307 and the sixth limiter 308 ensure that when the first limiter 301 and the second limiter 302 in each limiter 30 are in the first relative position, the first limiter 301 and the second limiter 308
  • the distance between the second limiters 302 is greater than the diameter of the protrusion 103; when the first limiter 301 and the second limiter 302 are in the second relative position, the first limiter 301 and the second limiter 302 are in the second relative position.
  • the distance between 302 is greater than the diameter of the equal diameter part 102 and smaller than the diameter of the outlet part.
  • the first limiting member 301 and the second limiting member 302 in each limiting device 30 are in the first relative position.
  • the crystal seeding operation is performed normally.
  • the shoulder is lowered to the diameter of the protruding portion 103,
  • the equal diameter length is about 10 to 50 mm.
  • adjust the pulling speed to reduce the diameter to the target diameter of the single crystal silicon rod 10, and perform the normal equal diameter process.
  • the length of the crystal rod gradually increases. becomes longer, when the protruding portion 103 passes the first limiting device 30, the first limiting member 301 and the second limiting member 302 in the limiting device 30 are controlled to be in the second relative position.
  • the crystal ingot gradually rises, and each time it passes through a limiting device 30, the first limiting member 301 and the second limiting member 302 in the limiting device 30 are controlled to be in the second relative position.
  • the first limiting member 301 and the second limiting member 302 of all limiting devices 30 are controlled to be in the first relative position, and the crystal is harvested normally.
  • the plurality of limiting devices 30 are spaced along the length direction of the auxiliary chamber 20 and are disposed at different positions of the auxiliary chamber 20 .
  • the position information of the protruding part 103 can be obtained based on the crystal pulling time, the weight of the single crystal silicon rod 10 or the sensor parameters.
  • the protruding part 103 passes the first limiting device 30 on the side wall of the auxiliary chamber 20 that is, the first limiting member 301 and the second limiting member 302 in the limiting device 30 can be controlled to be in the second relative position, and the single crystal silicon rod 10 is protected by the first limiting member 301 and the second limiting member 302 There will be no falling, and the protruding portion 103 is within the protection range of the first limiting device 30 before passing the next limiting device 30 .
  • the protrusion 103 continues to rise.
  • the first limiter 301 and the second limiter in the limiter 30 can be controlled.
  • the positioning member 302 is in the second relative position, so that the single crystal silicon rod 10 enters the protection range of the second limiting device 30 .
  • the single crystal silicon rod 10 gradually rises, and each time it passes through a limiting device 30, the first limiting member 301 and the second limiting member 302 in the limiting device 30 are controlled to be in the second relative position, and the position of the single crystal silicon rod 10 can be adjusted.
  • the monocrystalline silicon rod 10 implements segmented protection, which reduces the impact force when the monocrystalline silicon rod 10 falls, thereby improving the safety factor of the monocrystalline furnace.

Abstract

一种拉晶方法及单晶炉，所拉制的单晶硅棒其等径部靠近籽晶的一端沿自身径向延伸形成凸出部，凸出部的直径大于等径部的直径，拉晶方法包括：控制第一限位件和第二限位件处于第一相对位置，其中，第一相对位置表示第一限位件和第二限位件之间的距离大于凸出部直径时所处的位置：获取单晶硅棒的状态参数：在状态参数满足预设条件时，控制第一限位件和第二限位件处于第二相对位置，其中，第二相对位置表示第一限位件和第二限位件之间的距离小于凸出部直径，且大于等径部直径时所处的位置。

Description

一种拉晶方法及单晶炉
本申请要求在2022年3月23日提交中国专利局、申请号为202210288605.X、名称为“一种拉晶方法及单晶炉”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及单晶炉拉晶技术领域，尤其涉及一种拉晶方法及单晶炉。
背景技术
目前，直拉法生产单晶硅棒被广泛应用，单晶炉是采用直拉法生产单晶硅棒的主要设备。拉晶过程中，通常将籽晶伸入坩埚内部，先利用籽晶进行引晶，形成一段细晶，然后再通过放肩、转肩等操作形成等径的单晶硅棒。这一过程中，由于单晶硅棒仅依靠上部的细晶实现悬挂固定，当单晶硅棒质量较大或遇到设备晃动等情况时，单晶硅棒容易从细晶处断裂掉落，造成坩埚损坏甚至炉体爆炸的严重后果。
现有技术中，为避免单晶硅棒断裂掉落，通常利用传感器监测单晶硅棒的状态，当单晶硅棒快速掉落时，传感器监测到该异常现象，再控制防掉装置开启。
采用现有技术的防掉落方法，由于传感器与防掉装置之间的通信延迟，会出现防掉装置无法及时开启的问题，仍然存在单晶硅棒断裂掉落的风险。
发明内容
本申请提供一种拉晶方法及单晶炉，以解决现有技术中，采用传感器与防掉装置配合的方式，由于传感器与防掉装置之间的通信延迟，防掉装置无法及时开启，仍然存在单晶硅棒断裂掉落风险的问题。
为了解决上述问题，本申请是这样实现的：
本申请实施例提供了一种拉晶方法，用于拉制单晶硅棒，所述单晶硅棒包括籽晶和通过所述籽晶引出的等径部，所述等径部靠近所述籽晶的一端沿自身径向延伸形成凸出部，所述凸出部的直径大于所述等径部的直径，所述 拉晶方法包括：
控制第一限位件和第二限位件处于第一相对位置，其中，所述第一相对位置表示所述第一限位件和所述第二限位件之间的距离大于所述凸出部直径时所处的位置；
获取所述单晶硅棒的状态参数；
在所述状态参数满足预设条件时，控制所述第一限位件和所述第二限位件处于第二相对位置，其中，所述第二相对位置表示所述第一限位件和所述第二限位件之间的距离小于所述凸出部直径，且大于所述等径部直径时所处的位置。
可选地，所述获取所述单晶硅棒的状态参数，包括：获取所述单晶硅棒的拉晶时长，其中，所述拉晶时长与所述单晶硅棒的形状和位置相对应；
或者，
获取所述单晶硅棒的重量，其中，所述重量与所述单晶硅棒的形状和位置相对应，
或者，
获取所述单晶硅棒的位置信息。
本申请实施例还提供了一种单晶炉，所述单晶炉包括副室和设置于所述副室的限位装置；
所述限位装置包括第一限位件和第二限位件，所述第一限位件至少部分位于所述副室内，所述第二限位件至少部分位于所述副室内；
所述第一限位件和所述第二限位件分别与所述副室的侧壁连接，所述第一限位件与所述第二限位件相对设置；
在所述第一限位件和所述第二限位件处于第一相对位置时，所述第一限位件与所述第二限位件之间的距离大于所述凸出部的直径；
在所述第一限位件和所述第二限位件处于第二相对位置时，所述第一限位件与所述第二限位件之间的距离小于所述凸出部的直径，且大于所述等径部的直径。
可选地，所述限位装置还包括驱动机构；
所述第一限位件和所述第二限位件分别穿设于所述副室的侧壁，沿所述 副室的径向，所述第一限位件和所述第二限位件分别与所述副室滑动连接；
所述驱动机构分别与所述第一限位件和所述第二限位件连接，以驱动所述第一限位件和所述第二限位件沿所述副室的径向分别与所述副室相对滑动。
可选地，所述驱动机构包括气缸、第一传动件以及第二传动件；
所述第一传动件分别与所述气缸的动力输出端以及所述第一限位件连接；
所述第二传动件分别与所述气缸以及所述第二限位件连接。
可选地，所述驱动机构还包括浮动连接块和浮动接头；
所述浮动连接块与所述浮动接头固定连接；
所述浮动连接块与所述第一传动件连接且间隙配合；
所述气缸的动力输出端与所述浮动接头连接且间隙配合。
可选地，所述限位装置还包括安装支架；
所述安装支架与所述副室固定连接；
所述安装支架包括导向安装板、滑轨以及导向组件；
所述导向组件分别与所述第一传动件以及所述第二传动件连接；
所述滑轨的一侧与所述导向组件滑动连接，所述滑轨的另一侧与所述导向安装板固定连接，所述滑轨的长度方向与所述气缸的动力方向一致。
可选地，所述限位装置还包括第三限位件、第四限位件、第五限位件以及第六限位件；
所述安装支架还包括第一限位挡板和第二限位挡板；
所述导向安装板通过所述第一限位挡板和所述第二限位挡板与所述副室固定连接；
所述第三限位件和所述第四限位件分别与所述第一传动件连接，且所述第三限位件和所述第四限位件与所述第一限位挡板相对设置；
所述第五限位件和所述第六限位件分别与所述第二传动件连接，且所述第五限位件和所述第六限位件与所述第二限位挡板相对设置；
在所述第一限位件和所述第二限位件处于所述第一相对位置时，所述第三限位件与所述第一限位挡板抵接，所述第五限位件与所述第二限位挡板抵 接；
在所述第一限位件和所述第二限位件处于所述第二相对位置时，所述第四限位件与所述第一限位挡板抵接，所述第六限位件与所述第二限位挡板抵接。
可选地，所述限位装置还包括第一法兰、第一支撑件、第二法兰以及第二支撑件；
所述第一法兰和所述第二法兰设置于所述副室外，且分别与所述副室的侧壁固定连接；
所述第一支撑件和所述第二支撑件设置于所述副室内，且分别与所述副室的侧壁固定连接；
所述第一限位件依次穿设于所述第一法兰、所述副室的侧壁以及所述第一支撑件；
所述第二限位件依次穿设于所述第二法兰、所述副室的侧壁以及所述第二支撑件；
所述第一支撑件与所述第一限位件之间设置有第一轴套；
所述第二支撑件与所述第二限位件之间设置有第二轴套。
可选地，所述限位装置还包括第一波纹管和第二波纹管；
所述第一波纹管设置于所述第一法兰与所述第一传动件之间，且所述第一波纹管的两端分别与所述第一法兰以及所述第一传动件固定连接；
所述第二波纹管设置于所述第二法兰与所述第二传动件之间，且所述第二波纹管的两端分别与所述第二法兰以及所述第二传动件固定连接。
可选地，所述单晶炉包括多个所述限位装置；
多个所述限位装置沿所述副室的长度方向间隔设置。
在本申请实施例中，拉晶方法用于拉制单晶硅棒，单晶硅棒包括籽晶和通过籽晶引出的等径部，等径部靠近籽晶的一端沿自身径向延伸形成凸出部，凸出部的直径大于等径部的直径，拉晶方法包括：控制第一限位件和第二限位件处于第一相对位置，其中，第一相对位置表示第一限位件和第二限位件之间的距离大于凸出部直径时所处的位置；获取单晶硅棒的状态参数；在状态参数满足预设条件时，控制第一限位件和第二限位件处于第二相对位 置，其中，第二相对位置表示第一限位件和所述第二限位件之间的距离小于凸出部直径，且大于等径部直径时所处的位置。在第一限位件和第二限位件处于第一相对位置时，第一限位件的第一端与第二限位件的第一端之间的距离大于凸出部的直径，不会阻碍单晶硅棒的提升。根据单晶硅棒的状态参数可获取单晶硅棒的形状和位置信息，当凸出部提升通过第一限位件和第二限位件后，可控制第一限位件和第二限位件处于第二相对位置时，此时，第一限位件的第一端与第二限位件的第一端之间的距离小于凸出部的直径，且大于等径部的直径，第一限位件和第二限位件能够在单晶硅棒发生断裂掉落时，对凸出部进行支撑，避免其继续下落。在拉晶过程中，第一限位件和第二限位件能够对单晶硅棒持续施加保护，同时保证了等径部的正常生长。无需借助传感器，避免了通信延迟导致防掉装置无法及时开启的风险；并且，第一限位件和第二限位件无需随单晶硅棒一同运动，结构简单耐久性好，降低了生产成本。
附图说明
为了更清楚地说明本申请实施例的技术方案，下面将对本申请实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1表示本申请实施例的一种拉晶方法的步骤流程图；
图2表示本申请实施例的一种单晶炉结构示意图；
图3表示本申请实施例的一种限位装置结构示意图；
图4表示本申请实施例的一种单晶硅棒结构示意图。
附图标记说明：
10-单晶硅棒；20-副室；30-限位装置；101-籽晶；102-等径部；103-凸出部；301-第一限位件；302-第二限位件；303-驱动机构；304-安装支架；305-第三限位件；306-第四限位件；307-第五限位件；308-第六限位件；309-第一法兰；310-第一支撑件；311-第二法兰；312-第二支撑件；313-第一轴套；314-第一波纹管；315-第二波纹管；3031-气缸；3032-第一传动件；3033-第二传动件；3034-浮动连接块；3035-浮动接头；3041-导向安装板；3042-滑轨；3043-导向组件；3044-第一限位挡板；3045-第二限位挡板。
具体实施例
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
应理解，说明书通篇中提到的“一个实施例”或“一实施例”意味着与实施例有关的特定特征、结构或特性包括在本申请的至少一个实施例中。因此，在整个说明书各处出现的“在一个实施例中”或“在一实施例中”未必一定指相同的实施例。此外，这些特定的特征、结构或特性可以任意适合的方式结合在一个或多个实施例中。
参照图1所示，其示出了本申请实施例中一种拉晶方法的步骤流程图，具体如下：本申请实施例公开的拉晶方法用于拉制单晶硅棒，所述单晶硅棒包括籽晶和通过所述籽晶引出的等径部，所述等径部靠近所述籽晶的一端沿自身径向延伸形成凸出部，所述凸出部的直径大于所述等径部的直径。
单晶硅棒在单晶炉中拉制时，会执行引晶、放肩、转肩、等径等操作。拉晶准备工作完成后，先利用籽晶进行引晶形成一段细晶，再进行放肩。本申请实施例中，为得到具有凸出部的单晶硅棒，放肩所得的单晶硅棒的直径需比目标拉晶直径稍大，可通过控制转速和提拉速度，得到对应直径的晶棒。放肩直径达到凸出部的直径后进行转肩，然后等径一段时间，最后再按照目标拉晶尺寸进行收径，从而形成凸出部。当收径达到目标拉晶直径后，正常等径，继续进行单晶硅棒的拉制。
步骤101、控制第一限位件和第二限位件处于第一相对位置，其中，所述第一相对位置表示所述第一限位件和所述第二限位件之间的距离大于所述凸出部直径时所处的位置。
单晶炉具有主炉室和副室，副室位于主炉室上方，副室与主炉室连通。主炉室内放置有坩埚等部件，在拉晶准备工作阶段，先将单晶硅料 在主炉室的坩埚内加热至熔融状态，提拉装置穿过副室伸入主炉室内，提拉装置上设置有籽晶，籽晶伸入坩埚内实现引晶。提拉装置带动籽晶持续上升，晶棒长度逐渐增加，在提拉装置的牵引下由主炉室进入副室内。
在副室内设置有第一限位件和第二限位件。在拉晶准备工作阶段，或者在晶棒未到达第一限位件和第二限位件所在位置之前，控制第一限位件和第二限位件处于第一相对位置，可由人工控制第一限位件和第二限位件，也可通过驱动机构控制第一限位件和第二限位件。例如，在拉晶准备工作阶段，由操作人员手动控制第一限位件和第二限位件处于第一相对位置；或者，当拉晶设备处于准备阶段时，驱动机构自动控制第一限位件和第二限位件处于第一相对位置。此时，第一限位件和第二限位件之间的距离大于凸出部的直径，单晶硅棒的凸出部可顺利通过第一限位件和第二限位件所在位置，不会影响拉晶过程的正常进行。
步骤102、获取所述单晶硅棒的状态参数。
单晶硅棒的状态参数可以包括拉晶时长、拉晶重量等，根据该状态参数可判断单晶硅棒的形状以及移动位置等信息。
步骤103、在所述状态参数满足预设条件时，控制所述第一限位件和所述第二限位件处于第二相对位置，其中，所述第二相对位置表示所述第一限位件和所述第二限位件之间的距离小于所述凸出部直径，且大于所述等径部直径时所处的位置。
获取单晶硅棒的状态参数后，可判断单晶硅棒的状态参数是否满足预设条件，该预设条件与状态参数相对应，例如，获取的单晶硅棒的状态参数为拉晶时长，则对应的预设条件可以为预设拉晶时长，根据拉晶时长可判断单晶硅棒的凸出部在副室内的位置。当凸出部通过第一限位件和第二限位件所在位置时，对应一个拉晶时长，可将预设条件设定为凸出部通过第一限位件和第二限位件所在位置时的拉晶时长。当实际拉晶时长超过预设拉晶时长时，则单晶硅棒的状态参数满足预设条件，可控制第一限位件和第二限位件处于第二相对位置。同样地，在控制第一限位件和第二限位件处于第二相对位置时，可通过人工控制，也可通过 驱动机构控制。在第一限位件和第二限位件处于第二相对位置时，第一限位件和第二限位件之间的距离小于凸出部直径，且大于等径部的直径。此时，单晶硅棒的等径部可顺利通过第一限位件和第二限位件所在位置，不会影响拉晶过程的正常进行；当单晶硅棒由籽晶处发生断裂下落时，处于第二相对位置的第一限位件和第二限位件可对凸出部形成支撑，凸出部无法通过第一限位件和第二限位件所在位置，能够避免单晶硅棒持续掉落砸坏坩埚，防止出现安全事故。
在本申请实施例中，根据单晶硅棒的状态参数可获取单晶硅棒的形状和位置信息，当凸出部提升通过第一限位件和第二限位件后，可控制第一限位件和第二限位件处于第二相对位置时，此时，第一限位件的第一端与第二限位件的第一端之间的距离小于凸出部的直径，且大于等径部的直径，第一限位件和第二限位件能够在单晶硅棒发生断裂掉落时，对凸出部进行支撑，避免其继续下落。在拉晶过程中，第一限位件和第二限位件能够对单晶硅棒持续施加保护，同时保证了等径部的正常生长。无需借助传感器，避免了通信延迟导致防掉装置无法及时开启的风险；并且，第一限位件和第二限位件无需随单晶硅棒一同运动，结构简单耐久性好，降低了生产成本。
在本申请的一种可选实施例中，步骤102所述获取所述单晶硅棒的状态参数，包括：
S11、获取所述单晶硅棒的拉晶时长，其中，所述拉晶时长与所述单晶硅棒的形状和位置相对应；或者，获取所述单晶硅棒的重量，其中，所述重量与所述单晶硅棒的形状和位置相对应；或者，获取所述单晶硅棒的位置信息。
单晶硅棒的状态参数可以为拉晶时长，拉晶时长与单晶硅棒的形状和位置相对应，根据拉晶时长可判断单晶硅棒的凸出部在副室内的位置。例如，在拉晶过程持续第一拉晶时长时，对应的单晶硅棒的凸出部生长完成，凸出部仍然位于主炉室内。在拉晶过程持续第二拉晶时长时，对应的单晶硅棒的凸出部进入副室，但还未通过第一限位件和第二限位件所在位置。在拉晶过程持续第三拉晶时长时，对应的单晶硅棒的凸出部 通过第一限位件和第二限位件所在位置。操作人员或拉晶设备可根据拉晶时长判断第一限位件和第二限位件应该处于第一相对位置还是第二相对位置。
单晶硅棒的状态参数可以单晶硅棒的重量，单晶硅棒的重量与单晶硅棒的形状和位置相对应，根据单晶硅棒的重量可判断单晶硅棒的凸出部在副室内的位置。例如，在单晶硅棒处于第一重量，对应的单晶硅棒的凸出部生长完成，凸出部仍然位于主炉室内。在单晶硅棒处于第二重量，对应的单晶硅棒的凸出部进入副室，但还未通过第一限位件和第二限位件所在位置。在单晶硅棒处于第三重量，对应的单晶硅棒的凸出部通过第一限位件和第二限位件所在位置。操作人员或拉晶设备可根据单晶硅棒的重量判断第一限位件和第二限位件应该处于第一相对位置还是第二相对位置。
在本申请的一种可选实施例中，单晶硅棒的状态参数还可以是单晶硅棒的位置信息，可以直接通过传感器获取单晶硅棒的位置信息。单晶硅棒的位置信息具体可包括凸出部的位置信息，或者等径部的位置信息。获取凸出部的位置可直接判断凸出部是否通过限位装置，获取等径部位置信息，可根据等径部的位置推出凸出部的位置，进而判断凸出部是否通过限位装置。在一个具体的实施例中，可以通过传感器直接获取单晶硅棒凸出部的位置信息，传感器可以设置于副室内，靠近第一限位件和第二限位件的位置处，在单晶硅棒的凸出部通过第一限位件和第二限位件时，可被传感器检测到。传感器可以为光电传感器、霍尔传感器等。在传感器未检测到单晶硅棒凸出部通过第一限位件和第二限位件时，可控制第一限位件和第二限位件处于第一相对位置。在传感器检测到单晶硅棒凸出部通过第一限位件和第二限位件时，可控制第一限位件和第二限位件处于第二相对位置。传感器的数量可以根据第一限位件和第二限位件的数量对应选择。
参照图1至图3所示，本申请实施例还提供了一种单晶炉，所述单晶炉包括副室20和设置于所述副室20的限位装置30；所述限位装置30包括第一限位件301和第二限位件302，所述第一限位件301至少部分位 于所述副室20内，所述第二限位件302至少部分位于所述副室20内；所述第一限位件301和所述第二限位件302分别与所述副室20的侧壁连接，所述第一限位件301与所述第二限位件302相对设置；在所述第一限位件301和所述第二限位件302处于第一相对位置时，所述第一限位件301与所述第二限位件302之间的距离大于所述凸出部103的直径；在所述第一限位件301和所述第二限位件302处于第二相对位置时，所述第一限位件301与所述第二限位件302之间的距离小于所述凸出部103的直径，且大于所述等径部102的直径。
具体而言，如图1至图3所示，单晶炉具有主炉室和副室20，副室20位于主炉室上方，副室20与主炉室连通。主炉室内放置有坩埚等部件，在拉晶准备工作阶段，先将单晶硅料在主炉室的坩埚内加热至熔融状态，提拉装置穿过副室20伸入主炉室内，提拉装置上设置有籽晶101，籽晶101伸入坩埚内实现引晶。提拉装置带动籽晶101持续上升，晶棒长度逐渐增加，在提拉装置的牵引下由主炉室进入副室20内。
第一限位件301和第二限位件302至少部分位于所述副室20内，第一限位件301与第二限位件302相对设置，在副室20内形成限位空间。第一限位件301与第二限位件302可选用耐高温材质，避免副室20内高温导致第一限位件301与第二限位件302出现损坏。限位空间的形状由第一限位件301和第二限位件302的形状决定，例如，第一限位件301与第二限位件302为半圆弧形，则形成的限位空间则为圆形，圆形限位空间环绕单晶硅棒10实现限位；第一限位件301与第二限位件302为直杆，则直杆的端部相对设置形成半开放式空间，仅在第一限位件301与第二限位件302的端部具有限位功能。
第一限位件301和第二限位件302具有第一相对位置和第二相对位置，第一限位件301和第二限位件302分别与副室20的侧壁连接，具体可采用铰接、滑动连接以及卡接等，能够实现第一限位件301和第二限位件302在第一相对位置和第二相对位置之间切换即可。在控制第一限位件301和第二限位件302在第一相对位置和第二相对位置切换时，可通过人工控制，也可通过驱动机构303控制。
在第一限位件301和第二限位件302处于第一相对位置时，第一限位件301与第二限位件302之间的距离大于凸出部103的直径，从而第一限位件301与第二限位件302形成的限位空间的尺寸也大于凸出部103的直径，单晶硅棒10的凸出部103可顺利通过第一限位件301和第二限位件302所在位置，不会影响拉晶过程的正常进行。
在第一限位件301和第二限位件302处于第二相对位置时，第一限位件301和第二限位件302之间的距离小于凸出部103直径，且大于等径部102的直径。此时，单晶硅棒10的等径部102可顺利通过第一限位件301和第二限位件302所在位置，不会影响拉晶过程的正常进行；当单晶硅棒10由籽晶101处发生断裂下落时，处于第二相对位置的第一限位件301和第二限位件302可对凸出部103形成支撑，凸出部103无法通过第一限位件301和第二限位件302所在位置，能够避免单晶硅棒10持续掉落砸坏坩埚，防止出现安全事故。
在拉晶过程中，第一限位件301和第二限位件302能够对单晶硅棒10持续施加保护，同时保证了等径部102的正常生长。无需借助传感器，避免了通信延迟导致防掉装置无法及时开启的风险；并且，第一限位件301和第二限位件302无需随单晶硅棒10一同运动，结构简单耐久性好，降低了生产成本。
可选地，参照图3所示，所述限位装置30还包括驱动机构303；所述第一限位件301和所述第二限位件302分别穿设于所述副室20的侧壁，沿所述副室20的径向，所述第一限位件301和所述第二限位件302分别与所述副室20滑动连接；所述驱动机构303分别与所述第一限位件301和所述第二限位件302连接，以驱动所述第一限位件301和所述第二限位件302沿所述副室20的径向分别与所述副室20相对滑动。
具体而言，如图3所示，在本申请的一种可选地实施例中，由驱动机构303控制第一限位件301和第二限位件302在第一相对位置和第二相对位置之间切换。驱动机构303可设置于副室20内部，也可设置于副室20外部。当驱动机构303设置于副室20内部时，由于副室20内部高温，可在驱动机构303处设置冷却装置，避免高温对驱动机构303产生 影响。冷却装置可以为环绕驱动机构303的液冷管路，也可以为翅片管或者半导体制冷片等装置。
在本申请实施例中，驱动机构303设置于副室20外部，能够避免高温对驱动机构303的性能产生影响。驱动机构303可以为电机、气缸3031等装置。
副室20的侧壁开设有通孔，第一限位件301和第二限位件302分别穿设于副室20的侧壁，且分别与副室20滑动连接。第一限位件301部分外露于副室20外部，并与驱动机构303相连，具体的连接方式可以为焊接、卡接等；同样地，第二限位件302也部分外露于副室20外部，并与驱动机构303相连，具体的连接方式可以为焊接、卡接等。在驱动机构303的控制下，第一限位件301和第二限位件302沿副室20的径向分别与副室20相对滑动，实现在第一相对位置和第二相对位置之间切换。
在本申请的另一种可选地实施例中，驱动机构303设置于副室20内，第一限位件301和第二限位件302也设置于副室20内部，且分别与副室20的侧壁铰接。驱动机构303控制第一限位件301和第二限位件302处于第一相对位置时，第一限位件301和第二限位件302通过铰接轴折叠至副室20的侧壁上，此时，第一限位件301和第二限位件302之间的距离大于凸出部103的直径，单晶硅棒10的凸出部103可顺利通过第一限位件301和第二限位件302所在位置，不会影响拉晶过程的正常进行。
驱动机构303控制第一限位件301和第二限位件302处于第二相对位置时，第一限位件301和第二限位件302利用铰接轴，由折叠状态转动至展开状态，第一限位件301和第二限位件302之间的距离小于凸出部103直径，且大于等径部102的直径。此时，单晶硅棒10的等径部102可顺利通过第一限位件301和第二限位件302所在位置，不会影响拉晶过程的正常进行；当单晶硅棒10由籽晶101处发生断裂下落时，处于第二相对位置的第一限位件301和第二限位件302可对凸出部103形成支撑，凸出部103无法通过第一限位件301和第二限位件302所在位置，能够避免单晶硅棒10持续掉落，防止出现安全事故。
可选地，参照图3所示，所述驱动机构303包括气缸3031、第一传 动件3032以及第二传动件3033；所述第一传动件3032分别与所述气缸3031的动力输出端以及所述第一限位件301连接；所述第二传动件3033分别与所述气缸3031以及所述第二限位件302连接。
具体而言，如图3所示，在本申请的一种可选地实施例中，采用气缸3031驱动第一限位件301和第二限位件302，驱动机构303包括气缸3031、第一传动件3032以及第二传动件3033；气缸3031用于提供动力输出，第一传动件3032和第二传动件3033用于将气缸3031的动力传递至第一限位件301和第二限位件302上，以使第一限位件301和第二限位件302与副室20侧壁相对滑动。
气缸3031固定于第二传动件3033上，气缸3031与第二传动件3033的连接方式可以为焊接、螺栓连接等；气缸3031的动力输出端与第一传动件3032连接，第一传动件3032又与第一限位件301连接，连接方式也可以为焊接、螺栓连接等。气缸3031的动力输出端伸缩运动时，会带动第一传动件3032和第二传动也相对运动，进而控制第一限位件301和第二限位件302运动，实现第一相对位置和第二相对位置之间的切换。利用气缸3031驱动第一限位件301和第二限位件302，结构简单，稳定性强。
可选地，参照图3所示，所述驱动机构303还包括浮动连接块3034和浮动接头3035；所述浮动连接块3034与所述浮动接头3035固定连接；所述浮动连接块3034与所述第一传动件3032连接且间隙配合；所述气缸3031的动力输出端与所述浮动接头3035连接且间隙配合。
具体而言，如图3所示，气缸3031通过第一传动件3032和第二传动件3033驱动第一限位件301和第二限位件302运动时，由于气缸3031的动力输出方向为线性，为避免气缸3031的动力输出方向与第一传动件3032以及第二传动件3033之间产生偏角，导致气缸3031磨损的问题，在气缸3031的动力输出端与第一传动件3032连接处设置有浮动连接块3034和浮动接头3035。浮动连接块3034与浮动接头3035固定连接，浮动连接块3034与第一传动件3032连接且间隙配合，气缸3031的动力输出端与浮动接头3035连接且间隙配合，气缸3031在带动第一传动件3032 运动时，浮动连接块3034与第一传动件3032之间的间隙，以及气缸3031的动力输出端与浮动接头3035之间的间隙，均可以对气缸3031的动力输出端的施力位置进行动态调整，避免气缸3031的动力输出端与第一传动件3032之间产生摩擦，同时也不会影响气缸3031正常的动力输出，提升了驱动机构303的耐久性。
可选地，参照图2和图3所示，所述限位装置30还包括安装支架304；所述安装支架304与所述副室20固定连接；所述安装支架304包括导向安装板3041、滑轨3042以及导向组件3043；所述导向组件3043分别与所述第一传动件3032以及所述第二传动件3033连接；所述滑轨3042的一侧与所述导向组件3043滑动连接，所述滑轨3042的另一侧与所述导向安装板3041固定连接，所述滑轨3042的长度方向与所述气缸3031的动力方向一致。
具体而言，如图2和图3所示，在气缸3031驱动第一传动件3032以及第二传动件3033时，容易出现晃动偏移的问题。因此，在副室20的外侧壁上还设置有安装支架304，安装支架304与副室20的外侧壁固定连接，可以采用焊接、螺栓连接等方式进行固定。
安装支架304包括导向安装板3041、滑轨3042以及导向组件3043，导向安装板3041固定于副室20的外侧壁，导向安装板3041上设置有滑轨3042，且滑轨3042的长度方向与气缸3031的动力方向一致。第一传动件3032以及第二传动件3033分别与导向组件3043连接，并通过导向组件3043沿滑轨3042的长度方向滑动，导向组件3043可以为滑轮、滑片或滑块等。
由于导向安装板3041与副室20固定，能够提供稳定的支撑作用，气缸3031在驱动第一传动件3032以及第二传动件3033运动时，通过导向组件3043沿滑轨3042运动，能够对第一传动件3032以及第二传动件3033的运动方向进行限位，提升其运行的平稳性。
可选地，参照图3所示，所述限位装置30还包括第三限位件305、第四限位件306、第五限位件307以及第六限位件308；所述安装支架304还包括第一限位挡板3044和第二限位挡板3045；所述导向安装板3041 通过所述第一限位挡板3044和所述第二限位挡板3045与所述副室20固定连接；所述第三限位件305和所述第四限位件306分别与所述第一传动件3032连接，且所述第三限位件305和所述第四限位件306与所述第一限位挡板3044相对设置；所述第五限位件307和所述第六限位件308分别与所述第二传动件3033连接，且所述第五限位件307和所述第六限位件308与所述第二限位挡板3045相对设置；在所述第一限位件301和所述第二限位件302处于所述第一相对位置时，所述第三限位件305与所述第一限位挡板3044抵接，所述第五限位件307与所述第二限位挡板3045抵接；在所述第一限位件301和所述第二限位件302处于所述第二相对位置时，所述第四限位件306与所述第一限位挡板3044抵接，所述第六限位件308与所述第二限位挡板3045抵接。
具体而言，如图3所示，驱动机构303驱动第一限位件301和第二限位件302相对于副室20的侧壁滑动。安装支架304包括导向安装板3041、第一限位挡板3044以及第二限位挡板3045，导向安装板3041的两端分别与第一限位挡板3044以及第二限位挡板3045固定，导向安装板3041、第一限位挡板3044以及第二限位挡板3045可采用一体式结构。导向安装板3041通过第一限位挡板3044和第二限位挡板3045与副室20固定连接。
限位装置30还包括第三限位件305、第四限位件306、第五限位件307以及第六限位件308，其中，第一传动件3032具有水平部和竖直部，水平部用于与气缸3031的动力输出端连接，竖直部与第一限位挡板3044相对，第三限位件305和第四限位件306连接于第一传动件3032的竖直部，具体的连接方式可以为卡接或者螺纹连接等。第一限位挡板3044设置有通孔，第三限位件305穿过通孔与第一限位挡板3044滑动连接，第三限位件305靠近第一限位挡板3044的一端设置有大头结构，大头结构的直径大于通孔的直径。第四限位件306与第一限位挡板3044相对设置。
第二传动件3033也具有水平部和竖直部，水平部用于与气缸3031连接，竖直部与第二限位挡板3045相对，第五限位件307和第六限位件308连接于第二传动件3033的竖直部，具体的连接方式可以为卡接或者 螺纹连接等。第二限位挡板3045设置有通孔，第五限位件307穿过通孔与第二限位挡板3045滑动连接，第五限位件307靠近第一限位挡板3044的一端设置有大头结构，大头结构的直径大于通孔的直径。第六限位件308与第一限位挡板3044相对设置。
在第一限位件301和第二限位件302处于第一相对位置时，第三限位件305的大头结构与第一限位挡板3044抵接，第五限位件307的大头结构与第二限位挡板3045抵接，实现限位。在第一限位件301和第二限位件302朝远离副室20的方向滑动时，由于第三限位件305和第五限位件307的限位作用，滑动一定距离后就会停止，避免了第一限位件301和第二限位件302由副室20直接滑出的风险。
在第一限位件301和第二限位件302处于所述第二相对位置时，第四限位件306与第一限位挡板3044抵接，第六限位件308与第二限位挡板3045抵接，实现限位。在第一限位件301和第二限位件302朝靠近副室20的方向滑动时，由于第四限位件306和第六限位件308的限位作用，滑动一定距离后就会停止，避免了第一限位件301和第二限位件302过度伸入副室20内，与单晶硅棒10摩擦，影响正常拉晶过程。
可选地，参照图3所示，所述限位装置30还包括第一法兰309、第一支撑件310、第二法兰311以及第二支撑件312；所述第一法兰309和所述第二法兰311设置于所述副室20外，且分别与所述副室20的侧壁固定连接；所述第一支撑件310和所述第二支撑件312设置于所述副室20内，且分别与所述副室20的侧壁固定连接；所述第一限位件301依次穿设于所述第一法兰309、所述副室20的侧壁以及所述第一支撑件310；所述第二限位件302依次穿设于所述第二法兰311、所述副室20的侧壁以及所述第二支撑件312；所述第一支撑件310与所述第一限位件301之间设置有第一轴套313；所述第二支撑件312与所述第二限位件302之间设置有第二轴套。
具体而言，如图3所示，第一法兰309和第一支撑件310分别位于副室20侧壁的两侧，第一法兰309、副室20侧壁以及第一支撑件310连通，形成第一限位件301的滑动支撑空间。第二法兰311和第二支撑件 312分别位于副室20侧壁的两侧，第二法兰311、副室20侧壁以及第二支撑件312连通，形成第二限位件302的滑动支撑空间。通过设置法兰和支撑件，能够对第一限位件301以及第二限位件302实现支撑限位，驱动机构303驱动第一限位件301以及第二限位件302在滑动支撑空间内滑动，实现第一相对位置和第二相对位置之间的切换。
为避免副室20内高温对器件性能产生影响，在第一法兰309、第二法兰311、第一支撑件310以及第二支撑件312内部还设置有水冷通道，能够对器件及时降温，提升设备运行的稳定性。同时在法兰处还设置有密封圈，进一步提升了装置的密封性能。
第一支撑件310和第二支撑件312采用金属材质，为避免支撑件与限位件之间机械活动产生金属粉尘对拉晶环境的污染，在第一支撑件310与第一限位件301之间设置有第一轴套313；第二支撑件312与第二限位件302之间设置有第二轴套。第一轴套313或第二轴套为聚甲醛等耐磨塑胶材质，在与第一限位件301或第二限位件302滑动摩擦时，不易产生碎屑，避免对拉晶环境造成污染。
可选地，参照图3所示，所述限位装置30还包括第一波纹管314和第二波纹管315；所述第一波纹管314设置于所述第一法兰309与所述第一传动件3032之间，且所述第一波纹管314的两端分别与所述第一法兰309以及所述第一传动件3032固定连接；所述第二波纹管315设置于所述第二法兰311与所述第二传动件3033之间，且所述第二波纹管315的两端分别与所述第二法兰311以及所述第二传动件3033固定连接。
具体而言，如图3所示，第一传动件3032带动第一限位件301与第一法兰309相对滑动，第一传动件3032与第一法兰309之间的距离会发生变化。为保证滑动过程中副室20的密闭性，可在第一法兰309与第一传动件3032之间设置第一波纹管314，波纹管是由多个以冲压方式成型的薄形中空膜(波)片，利用精密焊接所制成的高度可弯曲及伸缩的金属管。第一波纹管314套设于第一限位件301，且第一波纹管314的两端分别与第一法兰309以及第一传动件3032固定连接。在第一限位件301与第一法兰309相对滑动时，第一波纹管314可随之伸长或缩短，保证 了滑动过程中副室20的密闭性。
同样地，为保证滑动过程中副室20的密闭性，可在第二法兰311与第二传动件3033之间设置第二波纹管315。第二波纹管315套设于第二限位件302，且第二波纹管315的两端分别与第二法兰311以及第二传动件3033固定连接。在第二限位件302与第二法兰311相对滑动时，第二波纹管315可随之伸长或缩短，保证了滑动过程中副室20的密闭性。
可选地，参照图2所示，所述单晶炉包括多个所述限位装置30；多个所述限位装置30沿所述副室20的长度方向间隔设置。
具体而言，如图2所示，在副室20上设置有多个限位装置30，多个限位装置30沿副室20的长度方向间隔设置。在安装限位装置30时，先将多个限位装置30安装至副室20预留法兰上，调整每个限位装置30中第三限位件305、第四限位件306、第五限位件307以及第六限位件308的位置，确保每个限位装置30中第一限位件301和第二限位件302处于第一相对位置时，第一限位件301和第二限位件302之间的距离大于凸出部103的直径；第一限位件301和第二限位件302处于第二相对位置时，第一限位件301和第二限位件302之间的距离大于等径部102的直径且小于出部的直径。
正常拉晶状态下，每个限位装置30中的第一限位件301和第二限位件302均处于第一相对位置，正常进行引晶作业，放肩至凸出部103直径后，等径一端时间，等径长度约为10～50mm，之后调整拉速，缩径至单晶硅棒10的目标直径，进行正常等径工步，随着提拉机构持续上升，晶棒长度逐步变长，当凸出部103经过第一个限位装置30后，控制限位装置30中第一限位件301和第二限位件302处于第二相对位置，如不出现掉棒事故，晶棒逐步上升，每经过一个限位装置30后，均控制该限位装置30中第一限位件301和第二限位件302处于第二相对位置。取晶前，控制所有限位装置30中第一限位件301和第二限位件302处于第一相对位置，正常取晶。
通过在副室20的高度方向设置多个限位装置30，多个限位装置30沿副室20的长度方向间隔设置，且设置于副室20的不同位置。可以根 据拉晶时间、单晶硅棒10的重量或者传感器参数，获取凸出部103的位置信息，当检测到凸出部103通过副室20侧壁上的第一个限位装置30后，即可控制该限位装置30中的第一限位件301和第二限位件302处于第二相对位置，单晶硅棒10在第一限位件301和第二限位件302的保护下不会发生坠落，在凸出部103通过下一个限位装置30之前，均处于第一个限位装置30的保护范围之内。凸出部103继续提升，当检测到凸出部103通过副室20侧壁上的第二个限位装置30后，可控制该限位装置30中的第一限位件301和第二限位件302处于第二相对位置，从而单晶硅棒10进入到第二个限位装置30的保护范围之内。以此类推，单晶硅棒10逐步上升，每经过一个限位装置30后，均控制该限位装置30中第一限位件301和第二限位件302处于第二相对位置，能够对单晶硅棒10实现分段保护，减少单晶硅棒10掉落时的冲击力，进而提升了单晶炉的安全系数。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素。
上面结合附图对本申请的实施例进行了描述，但是本申请并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本申请的启示下，在不脱离本申请宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本申请的保护之内。

Claims (11)

  1. 一种拉晶方法，用于拉制单晶硅棒，所述单晶硅棒包括籽晶和通过所述籽晶引出的等径部，所述等径部靠近所述籽晶的一端沿自身径向延伸形成凸出部，所述凸出部的直径大于所述等径部的直径，其中，所述拉晶方法包括：
    控制第一限位件和第二限位件处于第一相对位置，其中，所述第一相对位置表示所述第一限位件和所述第二限位件之间的距离大于所述凸出部直径时所处的位置；
    获取所述单晶硅棒的状态参数；
    在所述状态参数满足预设条件时，控制所述第一限位件和所述第二限位件处于第二相对位置，其中，所述第二相对位置表示所述第一限位件和所述第二限位件之间的距离小于所述凸出部直径，且大于所述等径部直径时所处的位置。
  2. 根据权利要求1所述的拉晶方法，其中，所述获取所述单晶硅棒的状态参数，包括：
    获取所述单晶硅棒的拉晶时长，其中，所述拉晶时长与所述单晶硅棒的形状和位置相对应；
    或者，
    获取所述单晶硅棒的重量，其中，所述重量与所述单晶硅棒的形状和位置相对应；
    或者，
    获取所述单晶硅棒的位置信息。
  3. 一种单晶炉，其中，所述单晶炉包括副室和设置于所述副室的限位装置；
    所述限位装置包括第一限位件和第二限位件，所述第一限位件至少部分位于所述副室内，所述第二限位件至少部分位于所述副室内；
    所述第一限位件和所述第二限位件分别与所述副室的侧壁连接，所述第 一限位件与所述第二限位件相对设置；
    在所述第一限位件和所述第二限位件处于第一相对位置时，所述第一限位件与所述第二限位件之间的距离大于所述凸出部的直径；
    在所述第一限位件和所述第二限位件处于第二相对位置时，所述第一限位件与所述第二限位件之间的距离小于所述凸出部的直径，且大于所述等径部的直径。
  4. 根据权利要求3所述的单晶炉，其中，所述限位装置还包括驱动机构；
    所述第一限位件和所述第二限位件分别穿设于所述副室的侧壁，沿所述副室的径向，所述第一限位件和所述第二限位件分别与所述副室滑动连接；
    所述驱动机构分别与所述第一限位件和所述第二限位件连接，以驱动所述第一限位件和所述第二限位件沿所述副室的径向分别与所述副室相对滑动。
  5. 根据权利要求4所述的单晶炉，其中，所述驱动机构包括气缸、第一传动件以及第二传动件；
    所述第一传动件分别与所述气缸的动力输出端以及所述第一限位件连接；
    所述第二传动件分别与所述气缸以及所述第二限位件连接。
  6. 根据权利要求5所述的单晶炉，其中，所述驱动机构还包括浮动连接块和浮动接头；
    所述浮动连接块与所述浮动接头固定连接；
    所述浮动连接块与所述第一传动件连接且间隙配合；
    所述气缸的动力输出端与所述浮动接头连接且间隙配合。
  7. 根据权利要求5所述的单晶炉，其中，所述限位装置还包括安装支架；
    所述安装支架与所述副室固定连接；
    所述安装支架包括导向安装板、滑轨以及导向组件；
    所述导向组件分别与所述第一传动件以及所述第二传动件连接；
    所述滑轨的一侧与所述导向组件滑动连接，所述滑轨的另一侧与所述导向安装板固定连接，所述滑轨的长度方向与所述气缸的动力方向一致。
  8. 根据权利要求7所述的单晶炉，其中，所述限位装置还包括第三限位件、第四限位件、第五限位件以及第六限位件；
    所述安装支架还包括第一限位挡板和第二限位挡板；
    所述导向安装板通过所述第一限位挡板和所述第二限位挡板与所述副室固定连接；
    所述第三限位件和所述第四限位件分别与所述第一传动件连接，且所述第三限位件和所述第四限位件与所述第一限位挡板相对设置；
    所述第五限位件和所述第六限位件分别与所述第二传动件连接，且所述第五限位件和所述第六限位件与所述第二限位挡板相对设置；
    在所述第一限位件和所述第二限位件处于所述第一相对位置时，所述第三限位件与所述第一限位挡板抵接，所述第五限位件与所述第二限位挡板抵接；
    在所述第一限位件和所述第二限位件处于所述第二相对位置时，所述第四限位件与所述第一限位挡板抵接，所述第六限位件与所述第二限位挡板抵接。
  9. 根据权利要求5所述的单晶炉，其中，所述限位装置还包括第一法兰、第一支撑件、第二法兰以及第二支撑件；
    所述第一法兰和所述第二法兰设置于所述副室外，且分别与所述副室的侧壁固定连接；
    所述第一支撑件和所述第二支撑件设置于所述副室内，且分别与所述副室的侧壁固定连接；
    所述第一限位件依次穿设于所述第一法兰、所述副室的侧壁以及所述第一支撑件；
    所述第二限位件依次穿设于所述第二法兰、所述副室的侧壁以及所述第二支撑件；
    所述第一支撑件与所述第一限位件之间设置有第一轴套；
    所述第二支撑件与所述第二限位件之间设置有第二轴套。
  10. 根据权利要求9所述的单晶炉，其中，所述限位装置还包括第一波纹管和第二波纹管；
    所述第一波纹管设置于所述第一法兰与所述第一传动件之间，且所述第一波纹管的两端分别与所述第一法兰以及所述第一传动件固定连接；
    所述第二波纹管设置于所述第二法兰与所述第二传动件之间，且所述第二波纹管的两端分别与所述第二法兰以及所述第二传动件固定连接。
  11. 根据权利要求3所述的单晶炉，其中，所述单晶炉包括多个所述限位装置；
    多个所述限位装置沿所述副室的长度方向间隔设置。
PCT/CN2022/135602 2022-03-23 2022-11-30 一种拉晶方法及单晶炉 WO2023179081A1 (zh)

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