WO2023153264A1 - Cible de pulvérisation formée d'un corps ferromagnétique à base de co-cr-pt-b - Google Patents

Cible de pulvérisation formée d'un corps ferromagnétique à base de co-cr-pt-b Download PDF

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WO2023153264A1
WO2023153264A1 PCT/JP2023/002957 JP2023002957W WO2023153264A1 WO 2023153264 A1 WO2023153264 A1 WO 2023153264A1 JP 2023002957 W JP2023002957 W JP 2023002957W WO 2023153264 A1 WO2023153264 A1 WO 2023153264A1
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alloy
phase
less
sputtering target
alloy phase
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PCT/JP2023/002957
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English (en)
Japanese (ja)
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知成 鎌田
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田中貴金属工業株式会社
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
    • H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
    • H01F1/047—Alloys characterised by their composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Definitions

  • the present invention relates to a sputtering target used for forming a magnetic film of a magnetic recording medium, particularly a magnetic recording layer of a hard disk drive adopting the perpendicular magnetic recording system, and is stable at a lower voltage when sputtering with a magnetron sputtering apparatus.
  • the present invention relates to a sputtering target capable of obtaining a discharged discharge.
  • materials based on ferromagnetic metals Co, Fe, or Ni are used as materials for magnetic thin films responsible for recording.
  • the magnetic recording layers of current hard disk drives use Co--Pt-based, Co--Cr--Pt-based, or composition systems obtained by adding non-magnetic inorganic substances to them.
  • the sputtering method is often used to produce the magnetic recording layer of this hard disk drive.
  • a melting method or a powder metallurgy method is generally used as a method for producing a target material that is indispensable when using the sputtering method. Which one is used is determined by the required target and thin film properties.
  • the sputtering method is a method in which a negative voltage is applied to a target material in an inert gas atmosphere, and the atoms that make up the target are deposited on the substrate to form a film.
  • a negative voltage By applying a negative voltage, the ionization of the inert gas proceeds, and the inert gas that has become positive ions is attracted to the target and collides with it, knocking out the atoms that make up the target.
  • a film is formed on the substrate by these atoms adhering to the substrate surface.
  • the magnetron sputtering method is a sputtering method in which a magnet is installed on the back side of a target, and a magnetic field generated on the surface of the target promotes ionization of plasma gas, thereby improving sputtering efficiency.
  • this magnetron sputtering method is often used from the viewpoints of film formation speed, target yield, and sputtering stability.
  • the target used for forming the magnetic recording layer is mainly a ferromagnetic material, which hinders the transmission of the magnetic flux emitted from the magnet placed on the back side. If the transmission of the magnetic flux is excessively hindered, the above advantage of using the magnetron sputtering method disappears, resulting in a decrease in target yield and instability of the sputtering discharge. Therefore, the target used in the magnetron sputtering method is required to have a leakage magnetic flux density as high as possible.
  • JPB4673453 a metal base (A) and a metal base (A) containing 90 mol% or more of Co have a difference between the major axis and the minor axis of 0 to 50%
  • JPB4758522 has a metal base (A) and a flat phase (B) containing 90 wt% or more of Co in the metal base (A), and the phase (B)
  • a ferromagnetic material sputtering target characterized by a structure having an average grain size of 10 ⁇ m or more and 150 ⁇ m or less and an average aspect ratio of 1:2 to 1:10, the composition containing Cr of 20 mol% or less and the balance being Co.
  • a sputtering target mainly composed of a metal having a composition containing 20 mol % or less of Cr, 5 mol % or more and 30 mol % or less of Pt, and the balance being Co.
  • JPB5394576 discloses a metal base (A), a Co—Pt alloy phase (B) containing 40 to 76 mol% of Pt in the metal base (A), and a Co—Pt alloy A ferromagnetic material sputtering target characterized by a structure having a Co alloy phase (C) containing 90 mol% or more of Co different from the phase (B), wherein Cr is 20 mol% or less, Pt is 5 mol% or more, and the balance is A sputtering target consisting of a metal of composition Co is described.
  • the grain size Those having a Co—Pt alloy phase (B) with a particle size of 50 to 150 ⁇ m containing 50 mol% of Pt and a pure Co phase (C) with a grain size of 70 to 150 ⁇ m are Co—Pt alloy phase (B) and Co alloy One having a structure containing no phase (C), and a structure containing a Co—Pt alloy phase (B) having a grain size of 50 to 150 ⁇ m and containing 81 mol% of Pt and a pure Co phase (C) having a grain size of 70 to 150 ⁇ m.
  • the average leakage flux density is higher than with When B is included as an additive element of 0.5 mol% or more and 10 mol% or less, B is present in the metal base (A), and the interface between the Co—Pt alloy phase (B) and the metal base (A) or the Co phase ( It is described that in some cases, some diffuse into the Co—Pt alloy phase (B) or Co phase (C) via the interface between C) and the metal substrate (A). That is, B may exist in the vicinity of the interface between the Co—Pt alloy phase (B) or Co phase (C) and the metal substrate (A), but the Co—Pt alloy phase (B) or Co phase (C) It is not a form distributed over the whole.
  • a Co alloy phase containing 90 mol% or more of large spherical Co with a grain size of 10 ⁇ m to 150 ⁇ m is present in the metal base (A), thereby forming a ferromagnetic material sputtering target. It discloses that the leakage magnetic flux density of can be increased.
  • B may be included as an additive element, there are no examples including B, and it is unknown whether the desired effect can be obtained in a Co--Cr--Pt--B based sputtering target.
  • B may be included as an additive element
  • B there are no examples including B, and it is unknown whether the desired effect can be obtained in a Co--Cr--Pt--B based sputtering target.
  • B is usually aggregated and unevenly distributed, those skilled in the art do not understand that B is distributed throughout.
  • JPA2015-61946 discloses an ingot structure made of a Co--Cr--Pt--B alloy with a precise structure. It is described that a fine and uniform rolled structure free of microcracks is obtained by controlling a processing method consisting of rolling or forging and adjusting by heat treatment.
  • FIG. 1 of this publication shows an SEM observation image of the structure of the sputtering target, which consists of two phases, a matrix phase and a B-rich phase.
  • B is distributed throughout the alloy phase, whereas in FIG. 1 of the publication, B is aggregated and B It is shown to be unevenly distributed in the rich phase.
  • JPA2015-619436 Japanese Patent No. 4673453 (JPB4673453) Japanese Patent No. 4758522 (JPB4758522) Japanese Patent No. 5394576 (JPB5394576) Japanese Patent Application Publication No. 2015-61946 (JPA2015-61946)
  • An object of the present invention is to provide a ferromagnetic sputtering target that provides stable discharge without abnormal discharge in the magnetron sputtering method.
  • the present inventors have found that in a Co—Cr—Pt—B ferromagnetic sputtering target, B is distributed in both the Co—Cr—Pt alloy phase and the Co or Co—Cr alloy phase, and the B aggregate phase is unevenly distributed. That is, a structure containing a Co—Cr—Pt—B alloy phase (A) and an alloy phase (B) that is either a Co—B alloy or a Co—Cr—B alloy.
  • A Co—Cr—Pt—B alloy phase
  • B alloy phase
  • the inventors have found that the leakage magnetic flux density can be improved and the discharge voltage can be lowered, and have completed the present invention.
  • a Co--Cr--Pt--B based ferromagnetic sputtering target and a method for producing the same are provided according to the following aspects.
  • the alloy phase (A) further contains Al, Si, Sc, Ti, V, Mn, Fe, Ni, Cu, Zn, Ge, Y, Zr, Nb, Ta, Mo, W, and Ru as additive elements.
  • the mixed powder is held at a pressure of 10 MPa or more and 100 MPa or less and a temperature of 700 ° C. or more and 1300 ° C. or less for 30 minutes or more and 3 hours or less.
  • the Co—Cr—Pt—B ferromagnetic sputtering target of the present invention contains a Co—Cr—Pt—B alloy phase (A) in which more than 0 at% and 30 at% or less of B is distributed throughout, Co-B alloy, Co-Cr-B alloy or Co-Pt-B alloy, containing more than 0 at% and 20 at% or less of B, and from the alloy phase (B) in which B is distributed throughout Since the B aggregate phase is not unevenly distributed and B is distributed over the entire target, the discharge voltage during sputtering can be reduced, and discharge abnormalities such as arcing caused by excessive voltage can be suppressed. In addition, the leakage magnetic flux density is high.
  • B alloy phase
  • FIG. 4 is a graph showing the relationship between input power and voltage value in Examples 1 to 3 and Comparative Examples 1 to 4; SEM observation image of Example 1.
  • FIG. SEM observation image of Comparative Example 3. EPMA-WDX mapping image of Example 1.
  • the present invention provides a ferromagnetic sputtering target that has a high leakage magnetic flux density and can reduce the discharge voltage during sputtering.
  • the Co—Cr—Pt—B ferromagnetic sputtering target of the present invention contains more than 0 at% and 30 at% or less of B, and B is distributed throughout the Co—Cr—Pt— A B alloy phase (A) and either a Co-B alloy, a Co-Cr-B alloy or a Co-Pt-B alloy, containing more than 0 at% and 20 at% or less of B, and the B aggregate phase being unevenly distributed and an alloy phase (B) in which B is distributed throughout the sputtering target, and the alloy phase (A) accounts for 50 vol% or more of the sputtering target, and the alloy phase (B) accounts for less than 50 vol% of the sputtering target. It is characterized by
  • the alloy phase (A) is larger than the alloy phase (B), and the alloy phase (A) is 50 vol% or more, preferably 60 vol% or more. Preferably, it accounts for 65 vol% or more, and alloy phase (B) is less than 50 vol%, preferably less than 40 vol%, more preferably less than 35 vol%.
  • the Co--Cr--Pt--B system ferromagnetic sputtering target of the present invention consists of two phases, an alloy phase (A) and an alloy phase (B), and does not contain other phases such as an oxide phase.
  • the alloy phase (A) contains more than 0 at% and 30 at% or less, preferably 3 at% or more and 26 at% or less of B, and the phase (B) contains more than 0 at% and 20 at% or less of B, preferably 3 at% or more and 18.5 at%.
  • B is distributed throughout in the alloy phase (B) means an EPMA- It means that there is no place where B does not exist in any 10 ⁇ m ⁇ 10 ⁇ m area in the WDX mapping image.
  • B is distributed throughout the alloy phase (A) as well.
  • “B is distributed throughout” in the alloy phase (A) means a 1000-fold SEM observation surface, an acceleration voltage of 20 kV, an irradiation current of 8 ⁇ 10 -5 A, a beam diameter of 10 ⁇ m, and an observation magnification of 200 times. means that there is no place where B does not exist in an arbitrary 10 ⁇ m ⁇ 10 ⁇ m region in the EPMA-WDX mapping image of .
  • the Co--Cr--Pt--B ferromagnetic sputtering target of the present invention contains Cr over 0 at% and 30 at% or less, Pt at 5 at% or more and 30 at% or less, B at 0 at% or more and 25 at% or less, and the balance is Co and unavoidable. It is preferred to have a composition that is an impurity. In particular, it is preferable to have a composition of 3 at % to 25 at % of Cr, 10 at % to 25 at % of Pt, 3 at % to 20 at % of B, and the balance being Co and unavoidable impurities.
  • the alloy phase (A) further contains Al, Si, Sc, Ti, V, Mn, Fe, Ni, Cu, Zn, Ge, Y, Zr, Nb, Te, Mo, W, Ru, Ag,
  • One or more elements selected from Sn, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Hf may be contained in an amount exceeding 0 at% and 25 at% or less, preferably 1 at% or more and 15 at% or less.
  • the average compositions of alloy phase (A) and alloy phase (B) are measured by the following method.
  • a cross section perpendicular to the sputtering target is cut out, polished in order using abrasive papers of counts from P80 to P1200, and finally buffed using diamond abrasive grains with a grain size of 1 ⁇ m to obtain a polished surface.
  • the polished surface is observed using EPMA.
  • the observation conditions for EPMA are as follows: JEOL JXA-8500F is used as an apparatus, acceleration voltage is 20 kV, irradiation current is 8 ⁇ 10 ⁇ 5 A, beam diameter is 10 ⁇ m, observation magnification is 200 times, and the number of pixels is 128 ⁇ 128 to obtain an elemental mapping image. do.
  • the quantitative analysis mode is used, metal is selected as the substance to be measured, and the ZAF method is selected as the correction method.
  • the phase in which all of the main components Co, Cr, Pt, and B are detected corresponding to the alloy phase (A)
  • the alloy phase (A) in which Cr or Pt is not detected a phase (corresponding to the alloy phase (B)) whose concentration is extremely lower than that of Cr or Pt is confirmed, for each of them, a portion of a size sufficient for a perfect circle with a diameter of 50 ⁇ m is selected, and the composition at the center of gravity is determined.
  • the above observations are made for three fields of view, three points each for the alloy phase (A) and the alloy phase (B), and the average of the observations is taken as the average composition of the alloy phase (A) and the alloy phase (B).
  • the volume ratios of alloy phase (A) and alloy phase (B) are measured by the following method.
  • a mass concentration map for each element is obtained using EPMA by the method described above.
  • elements not detected in the alloy phase (B) e.g. Cr or Pt for Co--B, Pt for Co--Cr--B
  • plot horizontally across the image e.g. Cr or Pt for Co--B, Pt for Co--Cr--B
  • Perform directional line analysis During the line analysis, among the phases corresponding to the alloy phase (A) and the alloy phase (B), a portion other than the boundary between the alloy phase (A) and the alloy phase (B), that is, the alloy phase (A) A line is selected that contains both the only region and the alloy phase (B) only region.
  • the map is binarized using the average value of the maximum and minimum values of the profile obtained by the line analysis as a threshold.
  • the range exceeding this threshold is defined as the alloy phase (A)
  • the range below the threshold is defined as the alloy phase (B).
  • the area ratio of the alloy phase (A) and the alloy phase (B) is obtained by analyzing the obtained binarized image by ImageJ particle analysis. The above operation is performed for three fields of view, and the average value is taken as the area ratio of the sample. This area ratio directly corresponds to the volume ratio of each phase.
  • Pt is basically used as the element used for line analysis of the mass concentration map, but Cr is used when Pt is contained in all phases.
  • the Co--Cr--Pt--B system ferromagnetic sputtering target of the present invention can be produced by powder metallurgy.
  • the production method of the present invention includes a Co—Cr—Pt—B alloy powder containing more than 0 at% and 30 at% or less of B, and a Co—B alloy powder and a Co—Cr—B alloy powder containing more than 0 at% and 20 at% or less of B. or Co--Pt--B alloy powder to obtain a mixed powder; and sintering the mixed powder to obtain a sintered body.
  • the Co—Cr—Pt—B alloy powder, Co—B alloy powder, Co—Cr—B alloy powder, or Co—Pt—B alloy powder was produced by atomized alloy powder, chemical production method, or other production method. Although powders can be used, atomized alloy powders are preferred.
  • Weak mixing is not mixing in which each raw material powder is pulverized by applying a large mixing stirring energy, but Co—Cr—Pt—B alloy powder constituting the alloy phase (A) and the alloy phase (B). It means gently mixing the Co--B alloy powder, the Co--Cr--B alloy powder, or the Co--Pt--B alloy powder while preserving them without pulverizing them.
  • weak mixing is performed at a low rotation speed for a short time, for example, at a rotation speed of 30 rpm or more and 100 rpm or less for 10 minutes or more and 1 hour or less. It is particularly preferred to use a shaker or a mixer that only rocks and does not use a stirring ball.
  • Sintering is performed in a vacuum atmosphere at a sintering pressure of 10 MPa or more and 100 MPa or less, a sintering temperature of 700° C. or more and 1300° C. or less, a holding time of 30 minutes or more and 3 hours or less, preferably a sintering pressure of 20 MPa or more and 80 MPa or less, and a sintering temperature of 800. C. to 1100.degree. C. for a holding time of 30 minutes to 2 hours. If the sintering pressure is too low, the compactness of the sintered body will decrease. If the sintering temperature is too low, the compactness of the sintered body will decrease.
  • the sintering temperature is too high, B will aggregate too much to form a coarse B aggregated phase as seen in the prior art, and the entire target will be B tends to be unevenly distributed without being distributed in.
  • the sintering holding time is too short, the density of the sintered body will decrease, while if the sintering holding time is too long, B will aggregate too much to form a coarse B aggregate phase as seen in the prior art, B tends to be unevenly distributed without being distributed over the entire target.
  • a decrease in density causes particles generated from the target during sputtering discharge.
  • uneven distribution of the coarse B aggregate phase causes poor discharge such as arcing.
  • Example 1 the atomized alloy powder as the raw material constituting the alloy phase (A) shown in Table 1 and the second phase shown in Table 1 (in Examples, The atomized alloy powder of the raw material constituting the alloy phase (B), hereinafter the same) was weighed so that the content of the second phase shown in Table 1 and the remainder was the content of the alloy phase (A). , Using a shaker, mix at 15 to 100 rpm for 15 minutes, fill the resulting mixed powder into a carbon die, and vacuum under the conditions of a pressure of 30 MPa, a temperature of 800 ° C. to 1100 ° C., and a holding time of 1 hour. Hot pressed and sintered.
  • the sintering temperature varied depending on the target composition, but was set so that all the samples had a compactness of 97% or higher.
  • the obtained sintered body was cut and ground using a surface grinder and a lathe to produce a disk-shaped sputtering target with a diameter of 165 mm and a thickness of 6.4 mm.
  • the obtained disk-shaped sputtering target was attached to a magnetron sputtering apparatus, and while argon gas was flowed so that the argon gas pressure was 4.0 Pa, sputtering was performed using a data logger while continuing sputtering discharge at an arbitrary input power. Discharge voltage was measured.
  • the setting condition of the data logger was to repeat 100 times measurement of data at 15,000 points at a sampling period of 2 ⁇ s. By calculating the average of the data of each measurement and averaging the average values for 100 measurements, the sputter discharge voltage value under the measurement conditions was calculated. Table 1 shows the results.
  • Comparative Examples 1, 5, 7, 9, 11, and 13 sputtering targets were produced in the same manner as in Examples, except that each metal powder was mixed instead of the alloy atomized powder to prepare a mixed powder.
  • Comparative Examples 2 and 3 sputtering targets were produced in the same manner as in Examples, except that atomized alloy powder containing no B was used as the raw material powder constituting the second phase.
  • Comparative Examples 4 6, 8, 10, 12, and 14 sputtering targets were produced in the same manner as in Examples, except that Co metal powder was used as the raw material powder constituting the second phase.
  • Table 2 also shows the measured values of PTF (leakage magnetic flux density).
  • PTF measurements were made according to ASTM F2086-01.
  • the PTF of the sputtering targets of Examples 1 and 2 is higher than the PTF of the sputtering targets of Comparative Examples 1 and 2, and is equivalent to the PTF of the sputtering target of Comparative Example 3, and the PTF of the sputtering target of Example 3 is It was confirmed that the PTF is higher than that of any of the sputtering targets of 1 to 4, and an improvement in the leakage magnetic flux density can also be achieved.
  • Comparative Example 4 when arranging in descending order of sputtering discharge voltage, Comparative Example 4 produced using Co metal powder as the second phase, Comparative Example 1 produced using each metal powder instead of alloy atomized powder, Comparative Examples 3 and 2 were produced using the atomized alloy powder containing no B, and the sputtering discharge voltage of Examples 1 to 3 in which B was distributed throughout the alloy phase (A) and the alloy phase (B) was It can be seen that the sputter discharge voltage is much lower than those of Comparative Examples 1-4. In particular, when the input power is 300 W or more, the range of decrease in the sputtering discharge voltage becomes large. Further, from Table 1, when the sputter discharge voltage at an input power of 500 W is compared, the example shows a low value of 330 V or less, but the comparative example shows a high value exceeding 330 V.
  • the sputtering target of Example 1 is a Co-Cr-Pt-B alloy phase (A) containing Co, Cr, Pt and B in the lower white region in the CP image.
  • the upper gray region in the CP image is the Co--Pt--B alloy phase (B) containing Co, Pt and B.
  • the sputtering target of Example 1 consists of a Co—Cr—Pt—B alloy phase (A) and a Co—Pt—B alloy phase (B), where B is the alloy phase (A) and In both (B), B is distributed throughout the alloy phase (A) and the alloy phase (B) without any place not existing in an arbitrary 10 ⁇ m ⁇ 10 ⁇ m region, and B in the alloy phase (A) is fine It is uniformly distributed throughout the alloy phase (B), and although B in the alloy phase (B) is agglomerated compared to B in the alloy phase (A), it is distributed throughout the alloy phase (B). I understand.
  • the sputtering target of Example 2 is a Co-Cr-Pt-B alloy phase (A) containing Co, Cr, Pt and B in the white area on the right side of the CP image. It can be seen that the gray area on the left side of the CP image is the Co—Cr—B alloy phase (B) containing Co, Cr, and B.
  • the sputtering target of Example 2 consists of a Co—Cr—Pt—B alloy phase (A) and a Co—Cr—B alloy phase (B), where B is the alloy phase (A) and In both of (B), there is no place where it does not exist in an arbitrary 10 ⁇ m ⁇ 10 ⁇ m region, B is distributed throughout the alloy phase (A) and the alloy phase (B), and B in the alloy phase (A) is It is finely and uniformly distributed throughout the alloy phase (B), and although B in the alloy phase (B) is agglomerated compared to B in the alloy phase (A), it is distributed throughout the alloy phase (B). I understand.
  • the sputtering target of Example 3 is a Co-Cr-Pt-B alloy phase (A) containing Co, Cr, Pt and B in the white area above the CP image, It can be seen that the lower gray area in the CP image is the Co—B alloy phase (B) containing Co and B.
  • the sputtering target of Example 3 consists of a Co—Cr—Pt—B alloy phase (A) and a Co—B alloy phase (B), where B is the alloy phase (A) and (B ), there is no place where it does not exist in an arbitrary 10 ⁇ m ⁇ 10 ⁇ m region, B is distributed throughout the alloy phase (A) and the alloy phase (B), and B in the alloy phase (A) is distributed throughout It can be seen that although B in the alloy phase (B) is agglomerated compared to B in the alloy phase (A), it is distributed throughout the alloy phase (B).
  • the sputtering target of Comparative Example 2 is a Co—Pt phase containing Co and Pt but not B in the gray area on the right side of the CP image, and the left side of the CP image. It can be seen that the region in which black dots are present is the phase (A) of Co--Cr--Pt--B containing Co, Cr, Pt and B. 6 and 12, the sputtering target of Comparative Example 2 consists of a Co—Cr—Pt—B phase (A) and a Co—Pt phase (second phase), and B is present in the Co—Pt phase. It can be seen that there is no alloy phase (B) containing B.
  • the sputtering target of Comparative Example 3 has a Co—Cr—Pt—B phase (A) containing Co, Cr, Pt, and B in the white area at the lower right of the CP image.
  • the gray area in the upper left of the CP image is a Co-Pt phase containing Co and a trace amount of Pt, and the large black part in the same gray area is a coarse aggregated phase of B unevenly distributed around Co.
  • the sputtering target of Comparative Example 3 consists of a Co—Cr—Pt—B phase (A) and a Co—Pt phase (second phase), and B surrounds the Co—Pt phase. It can be seen that there is an unevenly distributed 10 ⁇ m ⁇ 10 ⁇ m region in which B is not present in the second phase, and that there is no alloy phase (B) in which B is distributed throughout.

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Abstract

Cette cible de pulvérisation formée d'un corps ferromagnétique à base de Co-Cr-Pt-B est caractérisée en ce qu'elle comprend : une phase d'alliage Co-Cr-Pt-B (A) qui comprend du bore en une quantité supérieure à 0 % atomique mais inférieure ou égale à 30 % atomique, une phase agrégée de bore n'étant pas située de manière excentrée et le bore étant réparti partout ; et une phase d'alliage (B) qui est un alliage Co-B, un alliage Co-Cr-B, ou un alliage Co-Pt-B, et qui comprend du bore en une quantité supérieure à 0 % atomique mais inférieure ou égale à 20 % atomique, dans laquelle la phase agrégée de bore n'est pas située de manière excentrée et le bore est réparti partout. La phase d'alliage (A) représente 50 % en volume ou plus de la cible de pulvérisation, et la phase d'alliage (B) représente moins de 50 % en volume de la cible de pulvérisation.
PCT/JP2023/002957 2022-02-14 2023-01-31 Cible de pulvérisation formée d'un corps ferromagnétique à base de co-cr-pt-b WO2023153264A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001107226A (ja) * 1999-10-01 2001-04-17 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2002226970A (ja) * 2000-12-01 2002-08-14 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2007031827A (ja) * 2005-07-22 2007-02-08 Heraeus Inc スパッタターゲット製造方法
JP2009001861A (ja) * 2007-06-21 2009-01-08 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001107226A (ja) * 1999-10-01 2001-04-17 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2002226970A (ja) * 2000-12-01 2002-08-14 Hitachi Metals Ltd Ｃｏ系ターゲットおよびその製造方法
JP2007031827A (ja) * 2005-07-22 2007-02-08 Heraeus Inc スパッタターゲット製造方法
JP2009001861A (ja) * 2007-06-21 2009-01-08 Mitsubishi Materials Corp 比透磁率の低い垂直磁気記録媒体膜形成用スパッタリングターゲット

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