WO2023135844A1 - 複合基板の製造方法 - Google Patents

複合基板の製造方法 Download PDF

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Publication number
WO2023135844A1
WO2023135844A1 PCT/JP2022/030156 JP2022030156W WO2023135844A1 WO 2023135844 A1 WO2023135844 A1 WO 2023135844A1 JP 2022030156 W JP2022030156 W JP 2022030156W WO 2023135844 A1 WO2023135844 A1 WO 2023135844A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
piezoelectric
bonding
composite substrate
Prior art date
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Ceased
Application number
PCT/JP2022/030156
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English (en)
French (fr)
Japanese (ja)
Inventor
喬紘 山寺
烈 飯田
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NGK Insulators Ltd
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NGK Insulators Ltd
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Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Priority to JP2023573827A priority Critical patent/JP7678902B2/ja
Priority to KR1020247020774A priority patent/KR102916188B1/ko
Priority to CN202280085524.8A priority patent/CN118476156A/zh
Priority to DE112022005215.5T priority patent/DE112022005215T5/de
Publication of WO2023135844A1 publication Critical patent/WO2023135844A1/ja
Priority to US18/736,691 priority patent/US20240322777A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
    • F01D—NON-POSITIVE DISPLACEMENT MACHINES OR ENGINES, e.g. STEAM TURBINES
    • F01D11/00—Preventing or minimising internal leakage of working-fluid, e.g. between stages
    • F01D11/08—Preventing or minimising internal leakage of working-fluid, e.g. between stages for sealing space between rotor blade tips and stator
    • F01D11/14—Adjusting or regulating tip-clearance, i.e. distance between rotor-blade tips and stator casing
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H10N30/086—Shaping or machining of piezoelectric or electrostrictive bodies by machining by polishing or grinding
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F05—INDEXING SCHEMES RELATING TO ENGINES OR PUMPS IN VARIOUS SUBCLASSES OF CLASSES F01-F04
    • F05D—INDEXING SCHEME FOR ASPECTS RELATING TO NON-POSITIVE-DISPLACEMENT MACHINES OR ENGINES, GAS-TURBINES OR JET-PROPULSION PLANTS
    • F05D2240/00—Components
    • F05D2240/55—Seals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate

Definitions

  • the present invention relates to a method for manufacturing a composite substrate.
  • a surface acoustic wave (SAW) device is known as an acoustic wave device that uses elastic waves.
  • SAW devices are used, for example, as filters in communication equipment such as mobile phones.
  • devices having a structure in which a piezoelectric layer is sandwiched between electrodes and a hollow portion is formed between the piezoelectric layer and a supporting substrate have been proposed, as disclosed in Patent Document 1. .
  • Such a structure can be obtained, for example, by processing a composite substrate in which a piezoelectric substrate and a supporting substrate are bonded via an intermediate layer.
  • a main object of the present invention is to provide a composite substrate having excellent durability.
  • a method for manufacturing a composite substrate includes forming a first layer on the lower surface side of a piezoelectric substrate having an upper surface and a lower surface facing each other and having an electrode provided on the lower surface; by setting the waviness of the surface of the first layer to more than 2 nm and 70 nm or less, and bonding a support substrate to the first layer side of the piezoelectric substrate on which the first layer is formed, including.
  • the bonding surface of the first layer and the bonding surface on the support substrate side are subjected to an activation treatment.
  • the activation treatment is performed by plasma irradiation.
  • the manufacturing method further includes polishing the upper surface of the piezoelectric substrate after the bonding.
  • the first layer comprises silicon oxide.
  • a composite substrate with excellent durability can be provided.
  • FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a composite substrate according to one embodiment of the present invention
  • FIG. 2B is a continuation of FIG. 2A
  • FIG. 2C is a continuation of FIG. 2B
  • FIG. 2C is a continuation of FIG. 2C
  • FIG. 2C is a continuation of FIG. 2D
  • FIG. 3B is a continuation of FIG. 3A
  • 4 is a graph showing the state of waviness on the surface of the silicon oxide layer of Example 1.
  • FIG. 1 is a schematic cross-sectional view showing a schematic configuration of a composite substrate according to one embodiment of the present invention.
  • the composite substrate 100 has a piezoelectric layer 10, an intermediate layer 20, and a support substrate 30 in this order.
  • the support substrate 30 is arranged on the second main surface 10b side of the piezoelectric layer 10 having the first main surface 10a and the second main surface 10b facing each other, and the support substrate 30 is placed between the support substrate 30 and the piezoelectric layer 10.
  • An intermediate layer 20 is arranged.
  • An electrode 41 is provided on the second main surface 10 b of the piezoelectric layer 10 , and the intermediate layer 20 is arranged so as to cover the electrode 41 .
  • the intermediate layer 20 is in contact with the electrode 41 and the electrode non-formation region of the piezoelectric layer 10 where the electrode 41 is not formed.
  • the composite substrate 100 may further have arbitrary layers.
  • the type/function, number, combination, arrangement, etc. of such layers can be appropriately set according to the purpose.
  • the composite substrate 100 can be manufactured in any suitable shape. In one embodiment, it can be manufactured in so-called wafer form.
  • the size of the composite substrate 100 can be appropriately set according to the purpose.
  • the wafer diameter is, for example, 100 mm to 200 mm.
  • A-1. Piezoelectric Layer Any suitable piezoelectric material can be used as a material constituting the piezoelectric layer.
  • a single crystal with the composition LiAO 3 is preferably used as the piezoelectric material.
  • A is one or more elements selected from the group consisting of niobium and tantalum.
  • LiAO 3 may be lithium niobate (LiNbO 3 ), lithium tantalate (LiTaO 3 ), or a lithium niobate-lithium tantalate solid solution.
  • the piezoelectric layer extends from the Y-axis to the Z-axis when the X-axis (crystal axis) of the piezoelectric material is the propagation direction (X 1 ) of the surface acoustic wave.
  • the direction rotated 32° to 55° corresponds to the direction (X 3 ) perpendicular to the main surface of the piezoelectric layer, specifically (180°, 58° to 35° in Euler angles). °, 180°).
  • the piezoelectric layer When the piezoelectric material is lithium niobate, the piezoelectric layer extends from the Z-axis to the ⁇ Y-axis when the X-axis (crystal axis) of the piezoelectric material is the propagation direction (X 1 ) of the surface acoustic wave.
  • the direction rotated by 0° to 40° corresponds to the direction (X 3 ) perpendicular to the main surface of the piezoelectric layer, specifically (0°, 0 ° to 40°, 0°).
  • the piezoelectric layer may also extend from the Y-axis to the Z-axis when the X-axis (crystal axis) of the piezoelectric material is the propagation direction (X 1 ) of the surface acoustic wave. corresponds to the direction (X 3 ) perpendicular to the main surface of the piezoelectric layer, specifically (180°, 50° to 25°, 180° ) is preferred.
  • the thickness of the piezoelectric layer can be set to any suitable thickness depending on the usage and application of the composite substrate.
  • the thickness of the piezoelectric layer is, for example, 0.2 ⁇ m or more and 30 ⁇ m or less.
  • Electrodes may be composed of metals such as Au, Ag, Al, Pt, Mo, and Ru. These may be used alone or in combination of two or more.
  • the thickness of the electrode is, for example, 0.1 ⁇ m to 1 ⁇ m.
  • Electrodes are typically formed by patterning a metal film deposited on a piezoelectric body by sputtering, vacuum deposition, or the like.
  • intermediate layer examples of materials that constitute the intermediate layer include silicon oxide (SiO 2 ), tantalum oxide (Ta 2 O 5 ), niobium oxide (Nb 2 O 5 ), and silicon (PVD-Si). Silicon oxide is preferably used.
  • the thickness of the intermediate layer (including the thickness in the region facing the electrode) is, for example, 1 ⁇ m or more and 6 ⁇ m or less, preferably 2 ⁇ m or more and 3 ⁇ m or less.
  • the intermediate layer can be deposited by any suitable method.
  • it can be deposited by sputtering, physical vapor deposition such as ion beam assisted deposition (IAD), chemical vapor deposition, or atomic layer deposition (ALD).
  • IAD ion beam assisted deposition
  • ALD atomic layer deposition
  • the support substrate may be composed of a single crystal, a polycrystal, or a combination thereof. Materials constituting the support substrate are preferably selected from the group consisting of silicon, sapphire, glass, quartz, crystal and alumina.
  • the above silicon may be monocrystalline silicon with a polycrystalline layer or amorphous layer formed on its surface, or may be high resistance silicon.
  • the sapphire is a single crystal with a composition of Al 2 O 3 and the alumina is a polycrystal with a composition of Al 2 O 3 .
  • Alumina is preferably translucent alumina.
  • the thermal expansion coefficient of the material forming the support substrate is preferably smaller than the thermal expansion coefficient of the material forming the piezoelectric layer.
  • Such a supporting substrate can suppress changes in the shape and size of the piezoelectric layer when the temperature changes, and can suppress changes in the frequency characteristics of the obtained surface acoustic wave device, for example.
  • the thickness of the support substrate is, for example, 100 ⁇ m to 1000 ⁇ m.
  • Manufacturing method A method for manufacturing a composite substrate according to one embodiment of the present invention comprises forming a first layer on the lower surface side of a piezoelectric substrate having an upper surface and a lower surface facing each other and having an electrode provided on the lower surface; Planarizing the surface of the first layer and bonding a support substrate to the first layer side of the piezoelectric substrate.
  • FIGS. 2A to 2E are diagrams showing an example of a manufacturing process for a composite substrate according to one embodiment.
  • FIG. 2A shows a state in which the formation of the electrode 41 is completed on the lower surface 12b of the piezoelectric substrate 12 having the upper surface 12a and the lower surface 12b facing each other
  • FIG. It shows a state where the The film formation of the first layer 21 can be performed by the method for forming the intermediate layer described above.
  • the thickness of the first layer 21 can be set to a thickness that can sufficiently cover the electrodes 41, for example.
  • the thickness of the first layer 21 is, for example, 2 ⁇ m or more and 6 ⁇ m or less.
  • FIG. 2C shows a state in which planarization processing (for example, lapping and/or chemical-mechanical polishing) of the surface 21a of the first layer 21 has been completed.
  • planarization processing for example, lapping and/or chemical-mechanical polishing
  • the undulation of the surface 21a of the first layer 21 preferably exceeds 2 nm, more preferably 3 nm or more, and still more preferably 5 nm or more.
  • the waviness of the surface 21a of the first layer 21 is preferably 70 nm or less, more preferably 60 nm or less, and even more preferably 50 nm or less.
  • the waviness (surface shape) of the surface can be measured by a step meter.
  • the waviness of the surface 21a of the first layer 21 can be controlled by adjusting the planarization process. For example, the waviness value can be controlled by adjusting the polishing amount of lap polishing and the polishing amount of chemical mechanical polishing.
  • FIG. 2D shows a step of bonding (directly bonding) the piezoelectric substrate 12 on which the first layer 21 is formed and the support substrate 30 . Specifically, the bonding surface 21a of the first layer 21 and the bonding surface 30a of the support substrate 30 are brought into contact with each other and bonded. In this way, as shown in FIG. 2E, a composite substrate 110 in which the piezoelectric substrate 12 and the support substrate 30 are bonded via the intermediate layer 20 is obtained.
  • a second layer is formed on the side of the support substrate 30 to which the piezoelectric substrate 12 is bonded, and is formed between the bonding surface 21a of the first layer 21 formed on the piezoelectric substrate 12 and the support substrate 30. It may be bonded by contacting the bonded surface of the second layer coated with the film.
  • the intermediate layer is formed by joining the first layer and the second layer.
  • the material comprising the first layer 21 and the material comprising the second layer are substantially the same.
  • the first layer 21 and the second layer are formed by sputtering under the same conditions using the same target (eg, Si target). Any appropriate material can be selected as the material forming the first layer 1 and the material forming the second layer, as long as the bonding can be performed.
  • the bonding surface on the piezoelectric substrate 12 side and the bonding surface on the support substrate 30 side are subjected to an activation treatment in advance.
  • the activation treatment is performed by plasma irradiation.
  • Gases contained in the atmosphere during the activation process include, for example, oxygen, nitrogen, hydrogen, and argon. These may be used alone or in combination of two or more (as a mixed gas). Nitrogen is preferably used.
  • the atmospheric pressure during activation treatment by plasma irradiation is preferably 10 kPa to 100 kPa, more preferably 50 kPa to 80 kPa.
  • the energy during plasma irradiation is preferably 30W to 150W, more preferably 60W to 120W.
  • the duration of plasma irradiation is preferably 5 to 30 seconds.
  • the bonded body is heated.
  • the heating can further improve the bonding strength between the piezoelectric substrate 12 and the support substrate 30 .
  • the heating temperature is, for example, 100.degree. C. to 400.degree.
  • the heating time is, for example, 1 hour to 25 hours.
  • the contact and heating may be performed under an atmosphere of an inert gas such as nitrogen or argon, or may be performed in the air.
  • heating includes a first heating step and a second heating (annealing) step in this order.
  • first heating step the joined body is heated from room temperature to temperature T1 (for example, 100° C. to 150° C.).
  • the second heating step the joined body is placed under conditions of temperature T2 for a predetermined time (for example, 3 to 25 hours).
  • the temperature T2 is, for example, 180° C. or higher, may be 200° C. or higher, may be 230° C. or higher, may be 250° C. or higher, or may be 270° C. or higher.
  • the temperature T2 is preferably 350° C. or lower, more preferably 300° C. or lower, from the viewpoint of preventing damage to the joined body.
  • the joined body is typically allowed to cool naturally.
  • the surface arithmetic mean roughness Ra of each layer is preferably 1 nm or less, more preferably 0.3 nm or less. Such Ra can be achieved, for example, by mirror polishing by chemical mechanical polishing (CMP).
  • the arithmetic mean roughness Ra is a value measured with an atomic force microscope (AFM) in a field of view of 10 ⁇ m ⁇ 10 ⁇ m.
  • abrasive residue for example, abrasive residue, process-affected layer, and the like.
  • cleaning methods include wet cleaning, dry cleaning, and scrub cleaning.
  • scrub cleaning is preferred because it allows simple and efficient cleaning.
  • a cleaning agent for example, Sun Wash series manufactured by Lion Corporation
  • a solvent for example, a mixed solution of acetone and isopropyl alcohol (IPA)
  • IPA isopropyl alcohol
  • the upper surface 12a of the piezoelectric substrate 12 of the obtained composite substrate 110 is subjected to processing such as grinding and polishing so that the piezoelectric layer has the desired thickness.
  • the composite substrate 100 shown in FIG. 1 can be obtained.
  • Composite substrate 110 can be excellent in durability by adjusting the bonding surface to have the predetermined undulation. For example, it can have excellent durability during processing such as grinding and polishing. Specifically, it is possible to suppress the occurrence of peeling of the composite substrate (specifically, peeling at the bonding interface) due to processing such as grinding and polishing. As a result, it is possible to obtain a high-quality composite substrate without peeling.
  • FIG. 3A is a diagram showing a state in which formation of the second electrode (surface electrode) 42 on the surface of the composite substrate 100 (the first main surface 10a of the piezoelectric layer 10) is completed. After that, through holes (not shown) are formed in the piezoelectric layer 10 to reach the intermediate layer 20 , and the intermediate layer 20 is partially etched by, for example, a wet etching method using an etchant to form a hollow portion 24 .
  • the bonding strength between the piezoelectric layer 10 (intermediate layer 20) and the support substrate 30 can be excellent, so the hollow portion 24 can be formed satisfactorily.
  • Example 1 A black lithium niobate (LN) substrate having a diameter of 150 mm and a thickness of 0.5 mm with mirror-polished front and back surfaces was prepared. Also, a silicon substrate having a diameter of 150 mm and a thickness of 0.5 mm and having a high resistance (>2 k ⁇ cm) was prepared.
  • LN lithium niobate
  • the obtained Au film was patterned by lithography (pattern width: 30 ⁇ m) to form an electrode.
  • a silicon oxide layer (first layer) having a thickness of 5 ⁇ m was formed on the pattern formation surface side of the LN substrate.
  • the silicon oxide layer was formed by sputtering using a Si target (output: 4 kW) in a carousel method.
  • the surface of the silicon oxide layer was planarized by lapping to a thickness of 2 ⁇ m and then by CMP to a thickness of 0.5 ⁇ m.
  • the surface undulation is measured by a step meter (stylus profiling system, manufactured by BRUKER, model number “DektakXT (registered trademark)”) using a measuring needle with a diameter of 12.5 ⁇ m along the orientation flat (OF). It is the difference between the maximum value and the minimum value of height when measured in the range of 800 ⁇ m in the direction.
  • the activation treatment was performed at room temperature for 10 seconds with nitrogen gas plasma (energy: 100 W). After that, these substrates were subjected to ultrasonic cleaning using pure water and spin-dried to remove particles adhering to the activated surface. Then, the substrates were aligned, and the activated surfaces of both substrates were overlapped at room temperature in the atmosphere to obtain a bonded body.
  • the resulting joined body was placed in an oven (130°C) in a nitrogen atmosphere and heated for 4 hours. After that, the LN substrate of the bonded body (composite substrate) taken out from the oven was ground and lap-polished, and then subjected to CMP processing to a thickness of 1 ⁇ m to obtain a composite substrate.
  • Example 2 A composite substrate was obtained in the same manner as in Example 1, except that the processing conditions for the planarization treatment of the silicon oxide layer on the LN substrate were changed to set the surface waviness to 5 nm.
  • Example 3 A composite substrate was obtained in the same manner as in Example 1, except that the processing conditions for the planarization treatment of the silicon oxide layer on the LN substrate were changed to set the surface waviness to 50 nm.
  • Example 1 A composite substrate was obtained in the same manner as in Example 1, except that the processing conditions for the planarization treatment of the silicon oxide layer on the LN substrate were changed to set the surface waviness to 2 nm.
  • Example 2 A composite substrate was obtained in the same manner as in Example 1, except that the processing conditions for the planarization treatment of the silicon oxide layer on the LN substrate were changed to set the surface waviness to 80 nm.
  • Comparative Example 1 peeling of 10% was confirmed due to the processing load of thinning the LN substrate.
  • SEM scanning electron microscope
  • a composite substrate according to an embodiment of the present invention can typically be suitably used for an acoustic wave device.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Turbine Rotor Nozzle Sealing (AREA)
PCT/JP2022/030156 2022-01-17 2022-08-05 複合基板の製造方法 Ceased WO2023135844A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2023573827A JP7678902B2 (ja) 2022-01-17 2022-08-05 複合基板の製造方法
KR1020247020774A KR102916188B1 (ko) 2022-01-17 2022-08-05 복합 기판의 제조 방법
CN202280085524.8A CN118476156A (zh) 2022-01-17 2022-08-05 复合基板的制造方法
DE112022005215.5T DE112022005215T5 (de) 2022-01-17 2022-08-05 Verfahren zur Herstellung eines Verbundsubstrats
US18/736,691 US20240322777A1 (en) 2022-01-17 2024-06-07 Method for producing composite substrate

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Application Number Priority Date Filing Date Title
JP2022-005286 2022-01-17
JP2022005286 2022-01-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/736,691 Continuation US20240322777A1 (en) 2022-01-17 2024-06-07 Method for producing composite substrate

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WO2023135844A1 true WO2023135844A1 (ja) 2023-07-20

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JP (1) JP7678902B2 (https=)
KR (1) KR102916188B1 (https=)
CN (1) CN118476156A (https=)
DE (1) DE112022005215T5 (https=)
WO (1) WO2023135844A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026048189A1 (ja) * 2024-08-27 2026-03-05 日本碍子株式会社 複合基板の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003165795A (ja) * 2001-11-29 2003-06-10 Shin Etsu Chem Co Ltd 酸化物単結晶ウエーハ及びその製造方法並びに評価方法
JP2009524955A (ja) * 2006-01-26 2009-07-02 エプコス アクチエンゲゼルシャフト 電子音響部材
JP2015050653A (ja) * 2013-09-02 2015-03-16 日本碍子株式会社 弾性波デバイス用複合基板、その製法及び弾性波デバイス
JP2020057952A (ja) * 2018-10-03 2020-04-09 新日本無線株式会社 弾性表面波装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6023089Y2 (ja) 1979-09-22 1985-07-09 宇部興産株式会社 竪型射出装置
CN203014754U (zh) 2010-06-15 2013-06-19 日本碍子株式会社 复合基板
JP5650553B2 (ja) 2011-02-04 2015-01-07 太陽誘電株式会社 弾性波デバイスの製造方法
JP6166170B2 (ja) 2013-12-16 2017-07-19 日本碍子株式会社 複合基板及びその製法
US10523178B2 (en) 2015-08-25 2019-12-31 Avago Technologies International Sales Pte. Limited Surface acoustic wave (SAW) resonator
JP7075529B1 (ja) 2021-06-11 2022-05-25 日本碍子株式会社 複合基板および複合基板の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003165795A (ja) * 2001-11-29 2003-06-10 Shin Etsu Chem Co Ltd 酸化物単結晶ウエーハ及びその製造方法並びに評価方法
JP2009524955A (ja) * 2006-01-26 2009-07-02 エプコス アクチエンゲゼルシャフト 電子音響部材
JP2015050653A (ja) * 2013-09-02 2015-03-16 日本碍子株式会社 弾性波デバイス用複合基板、その製法及び弾性波デバイス
JP2020057952A (ja) * 2018-10-03 2020-04-09 新日本無線株式会社 弾性表面波装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026048189A1 (ja) * 2024-08-27 2026-03-05 日本碍子株式会社 複合基板の製造方法

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KR20240108517A (ko) 2024-07-09
KR102916188B1 (ko) 2026-01-21
JP7678902B2 (ja) 2025-05-16
JPWO2023135844A1 (https=) 2023-07-20
CN118476156A (zh) 2024-08-09
US20240322777A1 (en) 2024-09-26
US20250035006A1 (en) 2025-01-30
DE112022005215T5 (de) 2024-08-14

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