WO2023119347A1 - めっき装置のメンテナンス方法 - Google Patents

めっき装置のメンテナンス方法 Download PDF

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Publication number
WO2023119347A1
WO2023119347A1 PCT/JP2021/046934 JP2021046934W WO2023119347A1 WO 2023119347 A1 WO2023119347 A1 WO 2023119347A1 JP 2021046934 W JP2021046934 W JP 2021046934W WO 2023119347 A1 WO2023119347 A1 WO 2023119347A1
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WO
WIPO (PCT)
Prior art keywords
tank
catholyte
anolyte
plating
anode
Prior art date
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PCT/JP2021/046934
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English (en)
French (fr)
Japanese (ja)
Inventor
正輝 富田
Original Assignee
株式会社荏原製作所
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Filing date
Publication date
Application filed by 株式会社荏原製作所 filed Critical 株式会社荏原製作所
Priority to JP2022507852A priority Critical patent/JP7041795B1/ja
Priority to PCT/JP2021/046934 priority patent/WO2023119347A1/ja
Priority to KR1020227025386A priority patent/KR102549747B1/ko
Priority to CN202180011192.4A priority patent/CN115087764B/zh
Publication of WO2023119347A1 publication Critical patent/WO2023119347A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/06—Filtering particles other than ions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation

Definitions

  • the present invention relates to a maintenance method for plating equipment.
  • a so-called cup-type plating apparatus is known as a plating apparatus for plating substrates (see, for example, Patent Documents 1 and 2).
  • a plating apparatus has a plating tank.
  • the interior of the plating bath is partitioned by a membrane into an anode chamber below the membrane and a cathode chamber above the membrane.
  • An anode is placed in the anode chamber, and a substrate as a cathode is placed in the cathode chamber.
  • the anode fluid (plating fluid) stored in the anode fluid tank is circulated between the anode fluid tank and the anode chamber, and the cathode fluid stored in the catholyte tank is circulated.
  • a liquid (plating liquid) is circulated between the catholyte tank and the cathode chamber.
  • maintenance of the plating apparatus may be carried out, for example, when the substrate is not being plated.
  • the anolyte remaining in the anode chamber of the plating bath is returned to the anolyte tank, the anolyte is circulated between the anolyte tank and the anode chamber, and the plating is performed.
  • the catholyte remaining in the catholyte compartment of the cell is returned to the catholyte tank to circulate the catholyte between the catholyte tank and the cathode compartment.
  • such maintenance of the plating apparatus has room for improvement in terms of suppressing deformation of the film arranged inside the plating tank.
  • the present invention has been made in view of the above, and one of the objects thereof is to provide a technique capable of suppressing the deformation of the film arranged inside the plating bath.
  • a maintenance method for a plating apparatus provides an anolyte solution remaining in an anode chamber partitioned below a membrane inside a plating bath. returning catholyte remaining in a cathode chamber partitioned above the membrane inside the plating bath to a catholyte tank for storing catholyte; remaining in the anode chamber circulating the anolyte between the anolyte tank and the anode chamber after returning the anolyte to the anolyte tank; and returning any catholyte remaining in the cathode chamber to the catholyte tank. circulating catholyte between the catholyte tank and the cathode chamber at a later time after anolyte circulation between the anolyte tank and the anode chamber has been initiated.
  • the anolyte circulation between the anolyte tank and the anode chamber is initiated prior to the catholyte circulation between the catholyte tank and the cathode chamber, thereby
  • the chamber pressure increase can be initiated prior to the cathode chamber pressure increase.
  • the catholyte circulation precedes the anolyte circulation, and the pressure rise in the cathode chamber starts before the pressure rise in the anode chamber. It is possible to suppress the downward deformation of the membrane arranged in the cathode chamber due to the pressure in the cathode chamber.
  • the amount of air bubbles contained in the catholyte can be reduced by returning the catholyte to the catholyte tank after circulating the catholyte by bypassing the cathode chamber. This makes it possible to reduce the amount of air bubbles contained in the catholyte supplied to the cathode chamber during the subsequent circulation of the catholyte between the catholyte tank and the cathode chamber.
  • circulating the anolyte between the anolyte tank and the anode chamber is performed by increasing the temperature of the anolyte flowing from the front anolyte tank to the anode chamber. is adjusted within a predetermined temperature range by a temperature controller.
  • the temperature of the anolyte flowing from the anolyte tank toward the anode chamber can be quickly brought within a predetermined temperature range.
  • the circulating of the catholyte between the catholyte tank and the cathode chamber is performed by adjusting the temperature of the catholyte flowing from the catholyte tank to the cathode chamber. is adjusted within a predetermined temperature range by a temperature controller.
  • the temperature of the catholyte flowing from the catholyte tank toward the cathode chamber can be quickly brought within a predetermined temperature range.
  • FIG. 1 is a perspective view showing the overall configuration of a plating apparatus according to an embodiment
  • FIG. 1 is a plan view showing the overall configuration of a plating apparatus according to an embodiment
  • FIG. It is a figure which shows typically the peripheral structure of one plating tank of the plating module which concerns on embodiment.
  • FIG. 3 is a schematic diagram showing a liquid distribution configuration of one plating module according to the embodiment;
  • FIG. 4 is a flow diagram for explaining an example of a liquid distribution mode in the plating module according to the embodiment;
  • FIG. 5 is a flow chart for explaining the details of chemical solution preparation processing according to the embodiment;
  • FIG. 1 is a perspective view showing the overall configuration of a plating apparatus 1000 of this embodiment.
  • FIG. 2 is a plan view showing the overall configuration of the plating apparatus 1000 of this embodiment.
  • the plating apparatus 1000 includes a load port 100, a transfer robot 110, an aligner 120, a pre-wet module 200, a pre-soak module 300, a plating module 400, a cleaning module 500, a spin rinse dryer 600, a transfer It comprises an apparatus 700 and a control module 800 .
  • the load port 100 is a module for loading substrates housed in cassettes such as FOUPs (not shown) into the plating apparatus 1000 and for unloading substrates from the plating apparatus 1000 to cassettes. Although four load ports 100 are arranged horizontally in this embodiment, the number and arrangement of the load ports 100 are arbitrary.
  • the transfer robot 110 is a robot for transferring substrates, and is configured to transfer substrates among the load port 100 , the aligner 120 , the pre-wet module 200 and the spin rinse dryer 600 .
  • the transfer robot 110 and the transfer device 700 can transfer the substrates via a temporary table (not shown) when transferring the substrates between the transfer robot 110 and the transfer device 700 .
  • the aligner 120 is a module for aligning the positions of orientation flats, notches, etc. of the substrate in a predetermined direction. Although two aligners 120 are arranged horizontally in this embodiment, the number and arrangement of the aligners 120 are arbitrary.
  • the pre-wet module 200 replaces the air inside the pattern formed on the substrate surface with the treatment liquid by wetting the surface to be plated of the substrate before the plating treatment with a treatment liquid such as pure water or degassed water.
  • the pre-wet module 200 is configured to perform a pre-wet process that facilitates the supply of the plating solution to the inside of the pattern by replacing the treatment solution inside the pattern with the plating solution during plating. In this embodiment, two pre-wet modules 200 are arranged side by side in the vertical direction, but the number and arrangement of the pre-wet modules 200 are arbitrary.
  • the presoak module 300 for example, an oxide film having a large electric resistance existing on the surface of a seed layer formed on the surface to be plated of the substrate before plating is removed by etching with a treatment liquid such as sulfuric acid or hydrochloric acid, and the surface of the plating base is cleaned.
  • a treatment liquid such as sulfuric acid or hydrochloric acid
  • it is configured to perform a pre-soak process for activation.
  • two presoak modules 300 are arranged side by side in the vertical direction, but the number and arrangement of the presoak modules 300 are arbitrary.
  • the plating module 400 applies plating to the substrate. In this embodiment, there are two sets of 12 plating modules 400 arranged vertically and four horizontally, and a total of 24 plating modules 400 are provided. The number and arrangement of are arbitrary.
  • the cleaning module 500 is configured to perform a cleaning process on the substrate in order to remove the plating solution and the like remaining on the substrate after the plating process.
  • the spin rinse dryer 600 is a module for drying the substrate after cleaning by rotating it at high speed.
  • two spin rinse dryers 600 are arranged side by side in the vertical direction, but the number and arrangement of the spin rinse dryers 600 are arbitrary.
  • the transport device 700 is a device for transporting substrates between a plurality of modules within the plating apparatus 1000 .
  • Control module 800 is configured to control a plurality of modules of plating apparatus 1000 and may comprise, for example, a general purpose or dedicated computer with input/output interfaces to an operator.
  • a substrate accommodated in a cassette is loaded into the load port 100 .
  • the transport robot 110 takes out the substrate from the cassette of the load port 100 and transports the substrate to the aligner 120 .
  • the aligner 120 aligns orientation flats, notches, etc. of the substrate in a predetermined direction.
  • the transfer robot 110 transfers the substrates aligned by the aligner 120 to the pre-wet module 200 .
  • the pre-wet module 200 pre-wets the substrate.
  • the transport device 700 transports the pre-wet processed substrate to the pre-soak module 300 .
  • the presoak module 300 applies a presoak treatment to the substrate.
  • the transport device 700 transports the presoaked substrate to the plating module 400 .
  • the plating module 400 applies plating to the substrate.
  • the transport device 700 transports the plated substrate to the cleaning module 500 .
  • the cleaning module 500 performs a cleaning process on the substrate.
  • the transport device 700 transports the cleaned substrate to the spin rinse dryer 600 .
  • a spin rinse dryer 600 performs a drying process on the substrate.
  • the transport robot 110 receives the substrate from the spin rinse dryer 600 and transports the dried substrate to the cassette of the load port 100 . Finally, the cassette containing the substrates is unloaded from the load port 100 .
  • the configuration of the plating apparatus 1000 described with reference to FIGS. 1 and 2 is merely an example, and the configuration of the plating apparatus 1000 is not limited to the configuration of FIGS. 1 and 2.
  • plating module 400 Since the plurality of plating modules 400 of the plating apparatus 1000 according to this embodiment have the same configuration, one plating module 400 will be described.
  • FIG. 3 is a diagram schematically showing the peripheral configuration of one plating tank 10 of the plating module 400 in the plating apparatus 1000 according to this embodiment.
  • a plating apparatus 1000 according to this embodiment is a cup-type plating apparatus.
  • a plating module 400 of a plating apparatus 1000 according to this embodiment includes a plating bath 10, a substrate holder 20, a rotating mechanism 22, and an elevating mechanism 24.
  • one plating module 400 includes a plurality of plating tanks 10 in this embodiment.
  • the number of the plurality of plating tanks 10 should be two or more, and the specific number is not particularly limited.
  • one plating module 400 includes four plating tanks 10 (see FIG. 4 described later).
  • the plating tank 10 is configured by a bottomed container having an upper opening.
  • the plating bath 10 has a bottom wall 10a and an outer peripheral wall 10b extending upward from the outer edge of the bottom wall 10a, and the upper portion of the outer peripheral wall 10b is open.
  • the shape of the outer peripheral wall 10b of the plating tank 10 is not particularly limited, the outer peripheral wall 10b according to the present embodiment has a cylindrical shape as an example.
  • a plating solution Ps is stored inside the plating tank 10 . Outside the outer peripheral wall 10b of the plating bath 10, an overflow bath 19 for storing the plating solution Ps overflowing from the upper end of the outer peripheral wall 10b is arranged.
  • the plating solution Ps is not particularly limited as long as it contains ions of the metal elements forming the plating film.
  • a copper plating process is used as an example of the plating process
  • a copper sulfate solution is used as an example of the plating solution Ps.
  • the plating solution Ps contains a predetermined plating additive.
  • a predetermined plating additive in this embodiment, a "nonionic plating additive" is used.
  • the nonionic plating additive means an additive that does not exhibit ionicity in the plating solution Ps.
  • An anode 13 is arranged inside the plating tank 10 . Moreover, the anode 13 is arranged so as to extend in the horizontal direction.
  • a specific type of the anode 13 is not particularly limited, and may be an insoluble anode or a soluble anode. In this embodiment, an insoluble anode is used as an example of the anode 13 .
  • a specific type of the insoluble anode is not particularly limited, and platinum, iridium oxide, or the like can be used.
  • An ion resistor 14 is arranged in a later-described cathode chamber 12 inside the plating bath 10 . Specifically, the ion resistor 14 is provided above a film 40 described later in the cathode chamber 12 and below the substrate Wf.
  • the ion resistor 14 is a member that can act as a resistance to movement of ions in the cathode chamber 12, and is provided to uniformize the electric field formed between the anode 13 and the substrate Wf.
  • the ionic resistor 14 is composed of a plate member having a plurality of through holes 15 provided so as to penetrate the lower surface and the upper surface of the ionic resistor 14 .
  • the plurality of through-holes 15 are provided in the hole-forming area of the ion resistor 14 (which in the present embodiment is, as an example, a circular area when viewed from above).
  • a specific material of the ion resistor 14 is not particularly limited, but in this embodiment, as an example, a resin such as polyetheretherketone is used.
  • the film thickness of the plating film (plating layer) formed on the substrate Wf can be made uniform.
  • the ion resistor 14 is not an essential member for this embodiment, and the plating module 400 may be configured without the ion resistor 14 .
  • a film 40 is arranged inside the plating bath 10 .
  • the interior of the plating bath 10 is partitioned by a membrane 40 into an anode chamber 11 below the membrane 40 and a cathode chamber 12 above the membrane 40 .
  • the aforementioned anode 13 is arranged in the anode chamber 11 and the ion resistor 14 is arranged in the cathode chamber 12 .
  • the substrate Wf is placed in the cathode chamber 12 during the plating process on the substrate Wf.
  • the plating solution Ps supplied to the anode chamber 11 is referred to as “anode solution”
  • the plating solution Ps supplied to the cathode chamber 12 is referred to as “cathode solution”.
  • the membrane 40 allows the ionic species contained in the plating solution Ps (which include metal ions) to pass through the membrane 40 while allowing the nonionic plating additives contained in the plating solution Ps to pass through the membrane 40 .
  • the average diameter of the plurality of pores is nanometer size (that is, a size of 1 nm or more and 999 nm or less). This allows ionic species, including metal ions (which are nanometer-sized), to pass through the pores of membrane 40, while non-ionic plating additives (which are nanometer-sized). (larger than the size) are inhibited from passing through the pores of the membrane 40 .
  • an ion exchange membrane can be used.
  • the plating module 400 By providing the plating module 400 with the film 40 as in the present embodiment, it is possible to prevent the nonionic plating additive contained in the catholyte in the cathode chamber 12 from moving to the anode chamber 11 . As a result, the amount of consumption of the plating additive in the cathode chamber 12 can be reduced.
  • the film 40 may have an inclined portion 41 inclined with respect to the horizontal direction, as illustrated in FIG.
  • the slanted portion 41 of the film 40 illustrated in FIG. 3 is slanted with respect to the horizontal direction and positioned upward from the center side of the plating bath 10 toward the outer peripheral wall 10b side of the plating bath 10. It is slanted so that
  • the film 40 illustrated in FIG. 3 has, as an example, a “V-shaped” external shape when viewed from the front.
  • the structure of the film 40 is not limited to the above structure.
  • the membrane 40 may extend generally horizontally without the angled portion 41 .
  • the substrate holder 20 holds the substrate Wf as a cathode so that the surface to be plated (lower surface) of the substrate Wf faces the anode 13 .
  • the substrate holder 20 is connected to a rotating mechanism 22 .
  • the rotating mechanism 22 is a mechanism for rotating the substrate holder 20 .
  • the rotating mechanism 22 is connected to a lifting mechanism 24 .
  • the lifting mechanism 24 is supported by a column 26 extending vertically.
  • the elevating mechanism 24 is a mechanism for elevating the substrate holder 20 and the rotating mechanism 22 . Operations of the rotating mechanism 22 and the lifting mechanism 24 are controlled by the control module 800 .
  • the substrate Wf and the anode 13 are electrically connected to an energization device (not shown).
  • the energizing device is a device for causing electricity to flow between the substrate Wf and the anode 13 during the plating process.
  • the plating tank 10 is provided with an anode chamber supply port 16 a for supplying the anode fluid to the anode chamber 11 and an anode chamber discharge port 16 b for discharging the anode fluid from the anode chamber 11 .
  • the anode chamber supply port 16a according to the present embodiment is arranged on the bottom wall 10a of the plating bath 10 .
  • the anode chamber outlet 16b is arranged on the outer peripheral wall 10b of the plating bath 10 .
  • the anode chamber outlet 16b is provided at two locations in the plating tank 10, as an example.
  • the plating bath 10 is provided with a supply/drain port 17 for the cathode chamber 12 .
  • the supply/drain port 17 is a combination of a "catholyte supply port” and a “catholyte drain port”.
  • the supply/drain port 17 functions as a "supply port for catholyte", and the catholyte is supplied to the cathode chamber 12 from the supply/drain port 17. be done.
  • the supply/drain port 17 functions as a "drain port for the catholyte”. Catholyte is discharged from the supply/drain port 17 .
  • the configuration of the supply/drain port 17 is not limited to the configuration described above.
  • the plating module 400 may separately include a “cathode supply port” and a “cathode drain port” instead of the supply/drain port 17 .
  • the supply/drain port 17 is arranged on the outer peripheral wall 10b of the plating tank 10 so that the distance from the bottom (bottom surface) of the cathode chamber 12 to the supply/drain port 17 is, for example, 20 mm or less. It is
  • the overflow tank 19 is provided with an overflow tank discharge port 18 for discharging the plating solution Ps (cathode liquid) overflowing from the cathode chamber 12 and stored in the overflow tank 19 to the outside of the overflow tank 19. .
  • a pressure gauge 80a for detecting the pressure (Pa) in the anode chamber 11 and a pressure gauge 80b for detecting the pressure (Pa) in the cathode chamber 12 are arranged.
  • the detection results of the pressure gauges 80 a and 80 b are transmitted to the control module 800 .
  • the control module 800 comprises a processor 801 and a non-temporary storage device 802.
  • the storage device 802 stores programs, data, and the like.
  • the processor 801 controls the operation of the plating apparatus 1000 based on instructions of programs stored in the storage device 802 .
  • the rotation mechanism 22 rotates the substrate holder 20 , and the elevating mechanism 24 moves the substrate holder 20 downward to move the substrate Wf to the plating solution in the plating tank 10 . It is immersed in Ps (cathode liquid in the cathode chamber 12). Next, electricity is passed between the anode 13 and the substrate Wf by the energizing device. Thereby, a plating film is formed on the surface to be plated of the substrate Wf.
  • FIG. 4 is a schematic diagram showing the liquid circulation configuration of one plating module 400.
  • the plating module 400 includes tanks 50 and 51, pumps 52a and 52b, temperature controllers 53a and 53b, a filter 54, an anolyte supply device 57a, a catholyte supply device 57b, An additive supply device 57c, a metal ion supply device 57d, a plurality of channels (channels 70a to 70g4), a plurality of valves (valves 75a to 75o), a plurality of channel switching valves (channel switching valve 77a ⁇ 77d, etc.).
  • plating baths 10 are applied to one set of tanks 50 and 51 . That is, in the present embodiment, the number of plating baths 10 communicating with one set of tanks 50 and 51 via channels is four, as an example. However, the number of plating baths 10 applied to one set of tanks 50 and 51 may be plural, and may be less than four or may be more.
  • valves 75a to 75o are divided into a closed state (a state in which the valve opening is 0% and the flow rate of liquid passing through the valve is zero) and an open state (the valve opening is 0%). % and the flow rate of liquid passing through the valve is greater than zero).
  • valve opening degree is within the range of 0% or more and 100% or less (that is, the flow rate passing through the valve is within the range of zero or more and a predetermined value or less), continuously or stepwise
  • An adjustable flow control valve can also be used.
  • the plurality of valves and the plurality of flow path switching valves may be valves controlled by the control module 800, or may be manually operated valves. In this embodiment, the multiple valves and multiple flow path switching valves are controlled by the control module 800 .
  • the tank 50 is a tank for storing the anolyte.
  • Tank 50 communicates with anode chamber 11 .
  • the tank 51 is a tank for storing catholyte.
  • the tank 51 communicates with the cathode chamber 12 .
  • the tank 50 is an example of the "anode tank", and the tank 51 is an example of the "cathode tank”.
  • a liquid level sensor 81 a for detecting the liquid level of the anode fluid stored in the tank 50 is arranged in the tank 50 .
  • the tank 51 is also provided with a liquid level sensor 81 b for detecting the liquid level of the catholyte stored in the tank 51 .
  • the detection results of the liquid level sensors 81 a and 81 b are transmitted to the control module 800 .
  • the pump 52 a is a pump for pumping the anode fluid in the tank 50 toward the anode chamber 11 .
  • the pump 52 b is a pump for pumping the catholyte in the tank 51 toward the cathode chamber 12 .
  • a control module 800 controls the operation of the pumps 52a, 52b.
  • the pump 52a is an example of an "anolyte pump”
  • the pump 52b is an example of a "cathode pump”.
  • the temperature controller 53a is a device for adjusting the temperature of the anode fluid.
  • the temperature controller 53b is a device for adjusting the temperature of the catholyte.
  • the temperature adjuster 53a according to the present embodiment is arranged downstream of the pump 52a in the flow path 70a.
  • the temperature controller 53b according to the present embodiment is arranged at a location downstream of the pump 52b in the flow path 70c.
  • a control module 800 controls the operation of the temperature controllers 53a and 53b.
  • the filter 54 is a device for filtering the catholyte flowing from the tank 51 toward the cathode chamber 12 .
  • the filter 54 is disposed downstream of, for example, a temperature controller 53b in a flow path 70c, which will be described later.
  • the number of filters included in the plating module 400 is not limited to one, and may be two or more. Alternatively, plating module 400 may be configured without a filter.
  • the anolyte supply device 57a is a device for supplying anolyte.
  • the anolyte supplied by the anolyte supply device 57a may be an unused anolyte (that is, a new anolyte) or an anolyte that has been used for plating.
  • the catholyte supply device 57b is a device for supplying catholyte.
  • the catholyte supplied by the catholyte supply device 57b may be unused catholyte (ie, new catholyte) or may be catholyte that has been used for plating.
  • the specific configuration of the anolyte supply device 57a is not particularly limited, but for example, the anolyte supply device 57a includes a tank for storing the anolyte to be supplied and a tank for flowing the anolyte in the tank. and a pump for pumping toward the tank 50 via the line 70g1.
  • the specific configuration of the catholyte supply device 57b is not particularly limited. and a pump for pumping toward the tank 51 via the passage 70g2.
  • a control module 800 controls the operations of the anolyte supply device 57a and the catholyte supply device 57b according to the present embodiment.
  • the additive supply device 57c is a device for supplying plating additives.
  • the additive supply device 57c is used when supplying the plating additive to the plating solution Ps.
  • the additive supply device 57c according to the present embodiment is used, as an example, when replenishing the catholyte in the tank 51 with the plating additive.
  • a control module 800 controls the operation of the additive supply device 57c according to the present embodiment.
  • the metal ion supply device 57d is a device for supplying metal ions.
  • the metal ion supply device 57d according to this embodiment is used when supplying metal ions to the plating solution Ps.
  • the metal ion supply device 57d according to the present embodiment is used, as an example, when replenishing the catholyte in the tank 51 with a solution containing metal ions (eg, copper ions).
  • a control module 800 controls the operation of the metal ion supply device 57d according to this embodiment.
  • the flow path 70 a communicates the tank 50 , the pump 52 a and the anode chamber 11 of each plating tank 10 .
  • a temperature controller 53a is arranged in the flow path 70a according to the present embodiment.
  • the flow path 70a according to the present embodiment branches into a plurality of flow paths 70a1, 70a2, 70a3, and 70a4 at locations downstream of the temperature controller 53a. It communicates with the anode chamber 11 of the plating bath 10 .
  • the downstream end of the flow path 70a1 communicates with the anode chamber supply port 16a of the #1 plating tank 10.
  • the downstream end of the flow path 70a2 communicates with the anode chamber supply port 16a of the #2 plating tank 10.
  • the downstream end of the flow path 70a3 communicates with the anode chamber supply port 16a of the #3 plating tank 10.
  • the downstream end of the channel 70a4 communicates with the anode chamber supply port 16a of the plating tank 10 of #4.
  • the channels 70 b 1 , 70 b 2 , 70 b 3 , 70 b 4 are channels configured to return the anolyte in the anode chamber 11 of each plating tank 10 to the tank 50 .
  • the upstream portion of the flow path 70b1 is branched into two and communicated with the two anode chamber outlets 16b of the #1 plating tank 10.
  • a downstream end of the flow path 70b1 communicates with the tank 50 .
  • a portion of the flow path 70b2 on the upstream side of a predetermined location branches into two and communicates with the two anode chamber outlets 16b of the #2 plating tank 10. As shown in FIG. A downstream end of the flow path 70b2 communicates with the tank 50 .
  • a portion of the flow path 70b3 on the upstream side of a predetermined location branches into two and communicates with the two anode chamber outlets 16b of the #3 plating tank 10.
  • a downstream end of the flow path 70b3 communicates with the tank 50 .
  • a portion of the flow path 70b4 on the upstream side of a predetermined location branches into two and communicates with the two anode chamber outlets 16b of the plating tank 10 of #4.
  • a downstream end of the flow path 70b4 communicates with the tank 50 .
  • the flow path 70 c communicates the tank 51 , the pump 52 b and the cathode chamber 12 of each plating tank 10 . Further, a temperature controller 53b and a filter 54 are arranged in the flow path 70c according to this embodiment.
  • the flow path 70c according to the present embodiment is branched into a plurality of flow paths 70c1, 70c2, 70c3, and 70c4 at locations on the downstream side of the filter .
  • the downstream end of the flow path 70c1 communicates with the supply/drain port 17 of the #1 plating tank 10.
  • the downstream end of the flow path 70c2 communicates with the supply/drain port 17 of the plating tank 10 of #2.
  • the downstream end of the flow path 70c3 communicates with the supply/drain port 17 of the plating tank 10 of #3.
  • the downstream end of the flow path 70c4 communicates with the supply/drain port 17 of the plating tank 10 of #4.
  • the flow paths 70d1, 70d2, 70d3, and 70d4 are flow paths configured to return the catholyte of the overflow tank 19 of each plating tank 10 to the tank 51.
  • the upstream end of the flow path 70 d 1 communicates with the overflow tank discharge port 18 of the # 1 plating tank 10 , and the downstream end communicates with the tank 51 .
  • the upstream end of the flow path 70 d 2 communicates with the overflow tank discharge port 18 of the # 2 plating tank 10 , and the downstream end communicates with the tank 51 .
  • the upstream end of the flow path 70 d 3 communicates with the overflow tank discharge port 18 of the # 3 plating tank 10 , and the downstream end communicates with the tank 51 .
  • the upstream end of the flow path 70 d 4 communicates with the overflow tank discharge port 18 of the # 4 plating tank 10 , and the downstream end communicates with the tank 51 .
  • the flow paths 70 e 1 , 70 e 2 , 70 e 3 , and 70 e 4 are flow paths configured to return the catholyte to the tank 51 after circulating the catholyte bypassing the cathode chamber 12 .
  • the upstream end of the channel 70 e 1 communicates with the middle of the channel 70 c 1 via the channel switching valve 77 a , and the downstream end communicates with the tank 51 .
  • the upstream end of the channel 70 e 2 communicates with the middle of the channel 70 c 2 via the channel switching valve 77 b , and the downstream end communicates with the tank 51 .
  • the upstream end of the channel 70e3 communicates with the middle of the channel 70c3 via a channel switching valve 77c, and the downstream end communicates with the tank 51.
  • the upstream end of the channel 70e4 communicates with the middle of the channel 70c4 via a channel switching valve 77d, and the downstream end communicates with the tank 51.
  • FIG. 77c channel switching valve 77c
  • the flow path 70 g 1 is a flow path configured to allow the anolyte supplied from the anolyte supply device 57 a to flow into the tank 50 .
  • the upstream end of the channel 70g1 communicates with the anode fluid supply device 57a, and the downstream end thereof communicates with the tank 50.
  • the channel 70 g 2 is a channel configured to allow the catholyte supplied from the catholyte supply device 57 b to flow into the tank 51 .
  • the upstream end of the channel 70 g 2 communicates with the catholyte supply device 57 b , and the downstream end thereof communicates with the tank 51 .
  • the flow path 70g3 is a flow path configured to allow the plating additive supplied from the additive supply device 57c to flow into the tank 51.
  • the flow path 70 g 4 is a flow path configured to allow the solution containing metal ions supplied from the metal ion supply device 57 d to flow into the tank 51 .
  • the channel 70f is a channel (communication channel) configured to communicate the tank 50 and the tank 51 .
  • the flow path 70f according to the present embodiment includes a midway portion of the flow path 70a (a point upstream of a valve 75a described later) and a midpoint of the flow path 70c (a point upstream of the valve 75j described later). point).
  • a valve 75k for opening and closing the channel 70f is arranged in the channel 70f.
  • the valve 75k When the valve 75k is opened, the tanks 50 and 51 are communicated with each other via the flow path 70f. On the other hand, when the valve 75k is closed, the tanks 50 and 51 are disconnected.
  • the valve 75k is closed to close the flow path 70f. of catholyte.
  • the tank 50 and the tank 51 are communicated with each other by opening the valve 75k and opening the flow path 70f. and tank 51 may function as one large plating solution tank.
  • the valve 75a is arranged upstream of the pump 52a in the flow path 70a and downstream of the point where the flow path 70f is connected to the flow path 70a.
  • the valve 75b is arranged in the channel 70a1.
  • the valve 75c is arranged in the flow path 70a2.
  • the valve 75d is arranged in the flow path 70a3.
  • the valve 75e is arranged in the flow path 70a4.
  • the valve 75f is arranged in the flow path 70b1.
  • the valve 75g is arranged in the flow path 70b2.
  • 75 h of valves are arrange
  • the valve 75i is arranged in the flow path 70b4.
  • the valve 75j is disposed upstream of the pump 52b in the flow path 70c and downstream of a location where the flow path 70f is connected to the flow path 70c.
  • the valve 75l is arranged in the flow path 70g1.
  • the valve 75m is arranged in the flow path 70g2.
  • the valve 75n is arranged in the flow path 70g3.
  • the valve 75o is arranged in the flow path 70g4.
  • the channel switching valve 77a is arranged at a location where the channel 70e1 is connected to the channel 70c1.
  • the channel switching valve 77a switches the flow destination of the fluid in the channel 70c1 between the channel 70e1 and the anode chamber 11 of the plating bath 10 #1.
  • the channel switching valve 77b is arranged at a location where the channel 70e2 is connected to the channel 70c2.
  • the channel switching valve 77b switches the flow destination of the fluid in the channel 70c2 between the channel 70e2 and the anode chamber 11 of the plating tank 10 of #2.
  • the channel switching valve 77c is arranged at a location where the channel 70e3 is connected to the channel 70c3.
  • the channel switching valve 77c switches the flow destination of the fluid in the channel 70c3 between the channel 70e3 and the anode chamber 11 of the plating tank 10 of #3.
  • the channel switching valve 77d is arranged at a location where the channel 70e4 is connected to the channel 70c4.
  • the channel switching valve 77d switches the flow destination of the fluid in the channel 70c4 between the channel 70e4 and the anode chamber 11 of the plating tank 10 of #4.
  • a so-called three-way valve can be used as the channel switching valves 77a, 77b, 77c, and 77d.
  • FIG. 5 is a flow diagram for explaining an example of a liquid distribution mode in the plating module 400.
  • the plating solution circulation step in step S20 is executed when the substrate Wf is plated.
  • step S10 is executed when the plating apparatus 1000 is maintained. That is, step S10 corresponds to a maintenance method for the plating apparatus 1000.
  • each step in FIG. 5 may be automatically executed by the control module 800 based on a program command, for example.
  • step S20 of FIG. 5 the plating solution circulation step in step S20 of FIG. 5 will be described.
  • the anode solution is circulated between the tank 50 and the anode chamber 11
  • the catholyte solution is circulated between the tank 51 and the cathode chamber 12.
  • anode circulation Specifically, when circulating the anode fluid, the pump 52a is driven and the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h and 75i are opened. As a result, the anode fluid in the tank 50 flows through the flow paths 70a, 70a1, 70a2, 70a3, and 70a4, and flows into the anode chambers 11 of the plating tanks 10 #1 to #4. The anolyte in the anode chambers 11 of the plating tanks 10 #1 to #4 returns to the tank 50 after flowing through the flow paths 70b1, 70b2, 70b3, and 70b4.
  • the channels 70 a , 70 a 1 , 70 a 2 , 70 a 3 , and 70 a 4 are examples of “anode fluid supply channels” for supplying the anode fluid in the tank 50 to the anode chamber 11 .
  • the flow paths 70b1, 70b2, 70b3, and 70b4 are an example of the "anolyte return flow path" for returning the anolyte in the anode chamber 11 to the tank 50.
  • the anolyte supply channel and the anolyte return channel are an example of the “anolyte circulation channel” for circulating the anolyte between the tank 50 and the anode chamber 11 .
  • the channels 70 c , 70 c 1 , 70 c 2 , 70 c 3 , and 70 c 4 are examples of “cathode supply channels” for supplying the catholyte in the tank 51 to the cathode chamber 12 .
  • the flow paths 70d1, 70d2, 70d3, and 70d4 are examples of "cathode return flow paths" for returning the catholyte from the cathode chamber 12 to the tank 51.
  • the catholyte supply channel and the catholyte return channel are an example of the “cathode circulation channel” for circulating the catholyte between the tank 51 and the cathode chamber 12 .
  • the temperature of the anode fluid may be adjusted within a predetermined temperature range by the temperature controller 53a.
  • the temperature controller 53b may adjust the temperature of the catholyte within a predetermined temperature range.
  • Specific values of these temperature ranges are not particularly limited, but as an example, a range of 30° C. or higher and 70° C. or lower, more specifically a range of 40° C. or higher and 60° C. or lower is used. be able to.
  • each plating module 400 includes a plurality of plating tanks 10, and in each plating module 400, the anolyte is separated between the anode chambers 11 of the plurality of plating tanks 10 and the tank 50. circulates, and the catholyte circulates between the cathode chambers 12 of the plurality of plating tanks 10 and the tank 51. Therefore, the circulation of the anolyte and the catholyte in one plating module 400 can be used for other plating. Circulation of the anolyte and catholyte in module 400 is independent. This allows maintenance of some of the plating modules 400 to be performed independently of other plating modules 400 . Specifically, for example, maintenance of some of the plating modules 400 can be performed while the substrates Wf are being plated in other plating modules 400 .
  • the pressure in the anode chambers 11 of the plating baths 10 #1 to #4 may be adjusted by adjusting the valves 75f, 75g, 75h, and 75i during execution of step S20.
  • the pressure in the anode chambers 11 of the plating baths 10 #1 to #4 is the same as the pressure in the cathode chambers 12 of the plating baths 10 #1 to #4.
  • 75g, 75h, 75i may be adjusted.
  • the pressure in the anode chamber 11 of the #1 plating bath 10 can be increased by, for example, decreasing the valve opening of the valve 75f to decrease the flow rate of the anolyte passing through the valve 75f.
  • the pressure in the anode chamber 11 of the #1 plating tank 10 can be reduced by increasing the valve opening of the valve 75f to increase the flow rate of the anolyte passing through the valve 75f.
  • the opening of the valve 75f within the range of 0% to 100%, the pressure in the anode chamber 11 of the #1 plating tank 10 can be adjusted.
  • the pressure in the anode chamber 11 of the #1 plating tank 10 can be made the same as the pressure in the cathode chamber 12 .
  • the pressure in the anode chamber 11 of the #2 plating bath 10 is adjusted to make the pressure in the anode chamber 11 the same as the pressure in the cathode chamber 12. can be done.
  • the valve opening of the valve 75h the pressure in the anode chamber 11 of the #3 plating bath 10 can be adjusted to make the pressure in the anode chamber 11 equal to that in the cathode chamber 12. can.
  • the opening degree of the valve 75i the pressure in the anode chamber 11 of the #4 plating tank 10 can be adjusted to make the pressure in the anode chamber 11 the same as the pressure in the cathode chamber 12. can.
  • the pressures in the anode chambers 11 of the plating baths 10 #1 to #4 may be obtained based on the detection results of the pressure gauges 80a, for example. Further, the pressures of the cathode chambers 12 of the plating baths 10 #1 to #4 may be obtained based on the detection results of the pressure gauges 80b, for example.
  • Step S10 is executed before plating the substrate Wf. Specifically, step S10 according to the present embodiment is performed before step S20.
  • FIG. 6 is a flowchart for explaining the details of the chemical solution preparation process.
  • an “anolyte recovery step” is performed to return the anolyte remaining in the anode chambers 11 of the plurality of plating tanks 10 to the tank 50 communicating with the anode chambers 11 .
  • a “catholyte recovery step” is executed to return the catholyte remaining in the cathode chambers 12 of the plurality of plating tanks 10 to the tank 51 communicating with the cathode chambers 12 .
  • the valves 75f, 75g, 75h, and 75i are opened while the pump 52a is stopped, so that the anode fluid in each of the anode chambers 11 flows into the flow path 70b1. , 70b2, 70b3, and 70b4 are returned to the tank 50 (recovered). In this case, the anolyte in the anode chamber 11 returns to the tank 50 using gravity.
  • the channel switching valves 77a, 77b, 77c, and 77d are operated so that the channels 70e1, 70e2, 70e3, and 70e4 are in communication with the cathode chamber 12 while the pump 52b is stopped.
  • the catholyte in each cathode chamber 12 is circulated through the channels 70e1, 70e2, 70e3, and 70e4 and returned to the tank 51 (collected). In this case, the catholyte in the cathode chamber 12 returns to the tank 51 using gravity.
  • the anolyte recovery step is performed until the anolyte remaining in the anode chamber 11 is 10% or less, preferably 5% or less, more preferably 1% or less of the volume of the anode chamber 11.
  • the catholyte recovery step is performed until the catholyte remaining in the cathode chamber 12 is 10% or less, preferably 5% or less, more preferably 1% or less of the volume of the cathode chamber 12.
  • the anolyte recovery step may be performed for a preset predetermined time.
  • this predetermined time for example, a time such that the remaining anolyte in the anode chamber 11 is 10% or less, preferably 5% or less, more preferably 1% or less of the volume of the anode chamber 11 is determined in advance by experiments and simulations. etc. to set.
  • the catholyte recovery step may be performed for a predetermined period of time.
  • the predetermined time for example, a time such that the catholyte remaining in the cathode chamber 12 becomes 10% or less, preferably 5% or less, more preferably 1% or less of the volume of the cathode chamber 12, is experimentally or simulated in advance. etc. to set.
  • a “cathode liquid surface level determination step” for determining whether or not the surface level is equal to or higher than a predetermined level may be executed.
  • the level of the anolyte in the tank 50 may be obtained, for example, based on the detection result of the level sensor 81a.
  • the liquid level of the catholyte in the tank 51 may be obtained based on the detection result of the liquid level sensor 81b, for example.
  • a specific value of the "predetermined level" of the anolyte in the tank 50 is not particularly limited, but for example, while the anode chamber 11 is filled with the anolyte, the anolyte is allowed to flow between the tank 50 and the anode chamber 11.
  • a value that is equal to or higher than the minimum liquid surface level that allows circulating can be used.
  • the specific value of the "predetermined level” of the catholyte in the tank 51 is not particularly limited. A value greater than or equal to the minimum liquid level that allows the catholyte to circulate at .
  • the "predetermined level”, which is the reference value for judging the liquid level of the anolyte in the tank 50, and the “predetermined level”, which is the reference value for judging the liquid level of the catholyte in the tank 51, are the same value. may be different values.
  • step S10c (Anolyte/catholyte supply step (step S10c))
  • the tank 50 is replenished with the anolyte so that the level of the anolyte stored in the tank 50 is equal to or higher than the predetermined level. It is preferable to perform an "anolyte replenishment step”. Further, when the level of the catholyte stored in the tank 51 is less than the predetermined level, the catholyte is added to the tank 51 so that the level of the catholyte stored in the tank 51 is equal to or higher than the predetermined level. It is preferable to perform a "catholyte replenishment step" to replenish the .
  • the anolyte replenishing step of step S10c if the fluid level of the anode fluid stored in the tank 50 is not determined to be equal to or higher than a predetermined level (the fluid surface level of the anode fluid is less than a predetermined level), in the anolyte replenishing step of step S10c, the anolyte is supplied from the anolyte supply device 57a and the valve 75l is opened. As a result, the anode fluid supplied from the anode fluid supply device 57 a flows through the flow path 70 g 1 and is replenished to the tank 50 . This process is performed until the level of the anolyte stored in the tank 50 reaches or exceeds a predetermined level.
  • the catholyte replenishing step of step S10c when it is not determined that the liquid level of the catholyte stored in the tank 51 is equal to or higher than the predetermined level in the catholyte level determination step related to step S10b described above (the liquid level of the catholyte is determined to be the predetermined level). level), in the catholyte replenishing step of step S10c, the catholyte is supplied from the catholyte supply device 57b and the valve 75m is opened. As a result, the catholyte supplied from the catholyte supply device 57b flows through the channel 70g2 and is supplied to the tank 51. As shown in FIG. This process is performed until the surface level of the catholyte stored in the tank 51 reaches or exceeds a predetermined level.
  • step S10d If the liquid surface level of the catholyte stored in the tank 51 is equal to or higher than the predetermined level as a result of the determination in step S10b, the catholyte stored in the tank 51 bypasses the cathode chamber 12 and flows through the tank 51. It is preferable to perform a "cathode bypass circulation step" to return to Note that step S10d according to the present embodiment is executed at least before step S10f, which will be described later (in FIG. 6, it is executed before step S10e, which will be further described later).
  • step S10d the pump 52b is operated, the valve 75j is opened, the other valves are closed, and the flow path switching valves 77a, 77b, 77c, and 77d are switched to the flow paths.
  • 70c1, 70c2, 70c3, 70c4 and flow paths 70e1, 70e2, 70e3, 70e4 are switched to communicate with each other.
  • step S10d is executed for a preset predetermined time.
  • the flow paths 70c, 70c1, 70c2, 70c3, 70c4, 70e1, 70e2, 70e3, and 70e4 are for returning the catholyte stored in the tank 51 to the tank 51 after bypassing the cathode chamber 12. It is an example of a "catholyte bypass channel".
  • the temperature controller 53b may adjust the temperature of the catholyte flowing through the flow path within a predetermined temperature range.
  • the specific value of this temperature range is not particularly limited, but as an example, a range of 30° C. or higher and 70° C. or lower, more specifically, a range of 40° C. or higher and 60° C. or lower is used. can be done.
  • the amount of air bubbles contained in the catholyte can be reduced while the catholyte is circulating in the cathode bypass circulation step of step S10d.
  • the amount of air bubbles contained in the catholyte supplied to the cathode chamber 12 can be reduced when the catholyte is circulated between the tank 51 and the cathode chamber 12 in step S10f, which will be described later. can.
  • adhesion of a large amount of air bubbles to the ion resistor 14 can be suppressed.
  • step S10e An "anode fluid circulation step” of circulating the anode fluid between the tank 50 and the anode chamber 11 is performed. This allows the anode chamber 11 to be filled with the anolyte.
  • step S10e the pump 52a is operated, the valves 75a, 75b, 75c, 75d, 75e, 75f, 75g, 75h, and 75i are opened, and the other valves are closed.
  • the anode fluid in the tank 50 flows through the flow path 70 a and the temperature controller 53 a , and then flows through the flow paths 70 a 1 , 70 a 2 , 70 a 3 and 70 a 4 into the respective anode chambers 11 .
  • the anolyte that has flowed through the anode chamber 11 flows through the channels 70b1, 70b2, 70b3, and 70b4 and returns to the tank 50.
  • step S10e is executed at least after step S10a is completed. Specifically, step S10e according to the present embodiment is performed after step S10a is completed, and when it is determined in step S10b that the liquid surface level of the anode fluid stored in the tank 50 is equal to or higher than a predetermined level. , and more specifically, after the end of step S10d.
  • the temperature controller 53a may adjust the temperature of the anode fluid flowing from the tank 50 toward the anode chamber 11 within a predetermined temperature range.
  • the specific value of this temperature range is not particularly limited, but as an example, a range of 30° C. or higher and 70° C. or lower, more specifically, a range of 40° C. or higher and 60° C. or lower is used. can be done. According to this configuration, the temperature of the anolyte flowing from the tank 50 toward the anode chamber 11 can be quickly brought within a predetermined temperature range.
  • step S10f After step S10a (after the catholyte remaining in the cathode chamber 12 is returned to the tank 51) and after the anolyte circulation step of step S10e is started, in step S10f, the tank 51 and the cathode chamber 12 are A "catholyte circulation step” is performed to circulate the catholyte between and. This allows the cathode chamber 12 to be filled with catholyte.
  • step S10f the pump 52b is operated, the valve 75j is controlled to be open, the other valves are closed, and the flow path switching valves 77a, 77b, 77c, and 77d are switched to the flow paths.
  • the catholyte that has flowed through 70c1, 70c2, 70c3, and 70c4 is switched to flow into the cathode chamber 12.
  • the catholyte stored in the tank 51 flows through the flow path 70c and through the temperature controller 53b and the filter 54.
  • the catholyte that has passed through the filter 54 flows into each cathode chamber 12 after passing through the channels 70c1, 70c2, 70c3, and 70c4.
  • the catholyte that has flowed through the cathode chamber 12 (specifically, the catholyte that overflowed from the cathode chamber 12 and flowed into the overflow tank 19) flows through the channels 70d1, 70d2, 70d3, and 70d4 and returns to the tank 51. .
  • the temperature controller 53b may adjust the temperature of the catholyte flowing from the tank 51 toward the cathode chamber 12 within a predetermined temperature range.
  • the specific value of this temperature range is not particularly limited, but as an example, a range of 30° C. or higher and 70° C. or lower, more specifically, a range of 40° C. or higher and 60° C. or lower is used. can be done. According to this configuration, the temperature of the catholyte flowing from the tank 51 toward the cathode chamber 12 can be quickly brought within a predetermined temperature range.
  • step S10f may be started after step S10e is started, and for example, step S10e may be continuously executed while step S10f is being executed.
  • the anolyte circulation step of step S10e is started, and while the anolyte circulation step is being executed, the catholyte circulation step of step S10f is started, and thereafter the anolyte circulation step is performed. and the catholyte circulation step may be performed together.
  • step S10f is preferably started after step S10e is started and after the anode chamber 11 is filled with the anolyte.
  • step S10f may be started after a predetermined time has elapsed since the start of step S10e.
  • a predetermined time for example, a time sufficient for the anode chamber 11 to be filled with the anolyte is obtained in advance, and the time thus obtained may be used.
  • the plating additive may be supplied to the tank 51 during execution of step S10f (this is referred to as an "additive supply step").
  • the additive supply device 57c is caused to start supplying the plating additive, and the valve 75n is controlled to be open.
  • the plating additive supplied from the additive supply device 57c flows through the flow path 70g3 and is supplied to the tank 51. As shown in FIG.
  • metal ions may be replenished to the tank 51 (this is called a "metal ion replenishing step"). ) may be performed. Specifically, in this metal ion supply step, the metal ion supply device 57d is caused to start supplying a solution containing metal ions, and the valve 75o is controlled to be open. As a result, the solution containing metal ions supplied from the metal ion supply device 57d flows through the flow path 70g4 and is supplied to the tank 51.
  • the circulation of the anode fluid between the tank 50 and the anode chamber 11 is performed between the tank 51 and the cathode chamber 12. Since the catholyte circulation (cathode circulation step) is started earlier, the pressure increase in the anode chamber 11 can be started before the pressure increase in the cathode chamber 12 . As a result, for example, the catholyte circulation step is started before the anolyte circulation step, and the pressure increase in the cathode chamber 12 is started before the pressure increase in the anode chamber 11. It is possible to suppress the downward deformation of the membrane 40 arranged inside the cathode chamber 12 due to the pressure of the cathode chamber 12 .
PCT/JP2021/046934 2021-12-20 2021-12-20 めっき装置のメンテナンス方法 WO2023119347A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002220698A (ja) * 2001-01-29 2002-08-09 Tokyo Electron Ltd 液処理装置
JP2007291419A (ja) * 2006-04-21 2007-11-08 Nec Electronics Corp メッキ処理装置
US20150068911A1 (en) * 2013-09-12 2015-03-12 Kabushiki Kaisha Toshiba Copper plating apparatus, copper plating method and method for manufacturing semiconductor device
JP2016117918A (ja) * 2014-12-18 2016-06-30 三菱マテリアル株式会社 電解めっき方法及び電解めっき装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6821407B1 (en) 2000-05-10 2004-11-23 Novellus Systems, Inc. Anode and anode chamber for copper electroplating
JP2008019496A (ja) * 2006-07-14 2008-01-31 Matsushita Electric Ind Co Ltd 電解めっき装置および電解めっき方法
CN202925116U (zh) * 2012-09-27 2013-05-08 兰州交通大学 一种用于金属氯化物精炼的膜电积槽
US10760178B2 (en) * 2018-07-12 2020-09-01 Lam Research Corporation Method and apparatus for synchronized pressure regulation of separated anode chamber

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002220698A (ja) * 2001-01-29 2002-08-09 Tokyo Electron Ltd 液処理装置
JP2007291419A (ja) * 2006-04-21 2007-11-08 Nec Electronics Corp メッキ処理装置
US20150068911A1 (en) * 2013-09-12 2015-03-12 Kabushiki Kaisha Toshiba Copper plating apparatus, copper plating method and method for manufacturing semiconductor device
JP2016117918A (ja) * 2014-12-18 2016-06-30 三菱マテリアル株式会社 電解めっき方法及び電解めっき装置

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