WO2023112122A1 - 半導体素子を用いたメモリ装置 - Google Patents

半導体素子を用いたメモリ装置 Download PDF

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Publication number
WO2023112122A1
WO2023112122A1 PCT/JP2021/045965 JP2021045965W WO2023112122A1 WO 2023112122 A1 WO2023112122 A1 WO 2023112122A1 JP 2021045965 W JP2021045965 W JP 2021045965W WO 2023112122 A1 WO2023112122 A1 WO 2023112122A1
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WO
WIPO (PCT)
Prior art keywords
layer
voltage
line
gate
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/045965
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English (en)
French (fr)
Japanese (ja)
Inventor
理一郎 白田
康司 作井
望 原田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Singapore Pte Ltd
Original Assignee
Unisantis Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Singapore Pte Ltd filed Critical Unisantis Electronics Singapore Pte Ltd
Priority to KR1020247022970A priority Critical patent/KR20240113970A/ko
Priority to PCT/JP2021/045965 priority patent/WO2023112122A1/ja
Priority to JP2023567312A priority patent/JPWO2023112122A1/ja
Priority to CN202180105433.1A priority patent/CN118696378A/zh
Priority to US18/077,895 priority patent/US12277962B2/en
Publication of WO2023112122A1 publication Critical patent/WO2023112122A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators

Definitions

  • FIG. 7B shows the floating body 102 saturated with the generated holes 106 .
  • dynamic flash memory memory devices using semiconductor elements (hereinafter referred to as dynamic flash memory) according to embodiments of the present invention will be described with reference to the drawings.
  • the N + layer 3a is a source line SL (an example of a "source line” in the claims), and the N + layer 3b is a bit line BL (a "bit line” in the claims).
  • the first gate conductor layer 5a is connected to the first select gate line SG1 (which is an example of the "first select gate line” in the claims), the second gate conductor The layer 5b serves as a plate line PL (an example of a "plate line” in the claims), and the third gate conductor layer 5c serves as a second selection gate line SG2 (a "second selection gate” in the claims). ) are connected to each other.
  • FIG. 4B(c) shows the coupling capacity relationship of the dynamic flash memory.
  • CSG1 is the capacitance of the first gate conductor layer 5a
  • CPL is the capacitance of the second gate conductor layer 5b
  • CSG2 is the capacitance of the third gate conductor layer 5c
  • CBL is the capacitance of the PN junction between the N + layer 3b serving as the drain and the channel region 7a
  • C SL is the capacitance of the PN junction between the N + layer 3a serving as the source and the channel region 7a.
  • the operation affects the channel region 7a as noise.
  • 0 V is applied to the first select gate line SG1, the second select gate line SG2, and the plate line PL, which are the applied voltages V SG1 and V SG2 after "1" is written.
  • V PL is set to ⁇ 0.7 V
  • the hole group 10 stored in the channel region 7a is surrounded by the second gate conductor layer 5b connected to the plate line PL.
  • the channel regions 7a gather together. This is because the positively charged hole groups 10 are higher than the first gate conductor layer 5a and the third gate conductor layer 5b of the first select gate line SG1 and the second select gate line SG2 to which 0 V is applied.
  • the hole groups 10 stored in the channel regions 7a of the memory cells of the non-selected pages mainly exist on the side of the plate lines PL0 to PL2.
  • recombination of holes and electrons at the PN junction between the bit line BL and the channel region 7a and the PN junction between the source line SL and the channel region 7a is suppressed.
  • FIG. 6G shows select gate lines SG0 to SG2 in a block of memory cells C00 to C22 of 3 rows ⁇ 3 columns, in which the first select gate line and the second select gate line are shared at the end of the memory cell block. shows an example. Also in this configuration, the plate line PL of the unselected page of the dynamic flash memory cell according to the first embodiment of the present invention can be set to a negative voltage.
  • the page erase operation is largely composed of two operations.
  • the first operation (which is an example of the "first operation” in the scope of claims) is to lift the first and second select gate lines SG1 and SG2 and the plate line PL to cause the floating body of the channel region 7a to rise. is increased by capacitive coupling, and then the bit line BL and the source line SL are lowered to forward bias the PN junction and release the hole group 10 .
  • the second operation (which is an example of the "second operation” in the scope of claims) is that the channel region 7a This is a pull-down operation due to capacitive coupling with .
  • the hole groups 10 stored in the channel regions 7a of the memory cells of the non-selected pages mainly exist on the side of the plate lines PL0 to PL2.
  • recombination of holes and electrons at PN junctions between the bit line BL and the channel region 7a and between the source line SL and the channel region 7a is suppressed.
  • the dynamic flash memory operation described in this embodiment can be performed even if the horizontal cross-sectional shape of the Si pillar 2 is circular, elliptical, or rectangular. Circular, elliptical, and rectangular dynamic flash memory cells may also be mixed on the same chip.
  • the voltage conditions applied to the bit line BL, the source line SL, the first and second select gate lines SG1 and SG2, and the plate line PL, and the voltage of the floating body are determined in the erase, write, and read operations. This is an example for performing the basic operation, and other voltage conditions may be used as long as the basic operation of the present invention can be performed.
  • Dynamic flash memory cell 2 Si pillars 3a, 3b having P-type or i-type (intrinsic) conductivity type: N + layer 7a: Channel regions 4a, 4b: Gate insulating layers 5a, 5b: Gate conductor layer 6 : Insulating layer BL for separating two gate conductor layers: Bit line SL: Source line PL: Plate line SG1: First select gate line SG2: Second select gate line FB: Floating body C00-C22: memory cells SL: source lines BL0-BL2: bit lines PL0-PL2: plate lines SG10-SG22: first and second selection gate lines SA0-SA2: sense amplifier circuits T0A-T2D: MOS transistors IO, /IO: input/output lines CSL0 to CSL2: column selection lines 110: DRAM memory cell without capacitor 100: SOI substrate 101: SiO 2 film of SOI substrate 102: Floating Body 103: Source N + layer 104: Drain N + layer 105: Gate conductive layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Semiconductor Memories (AREA)
PCT/JP2021/045965 2021-12-14 2021-12-14 半導体素子を用いたメモリ装置 Ceased WO2023112122A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020247022970A KR20240113970A (ko) 2021-12-14 2021-12-14 반도체 소자를 사용한 메모리 장치
PCT/JP2021/045965 WO2023112122A1 (ja) 2021-12-14 2021-12-14 半導体素子を用いたメモリ装置
JP2023567312A JPWO2023112122A1 (https=) 2021-12-14 2021-12-14
CN202180105433.1A CN118696378A (zh) 2021-12-14 2021-12-14 使用半导体元件的内存装置
US18/077,895 US12277962B2 (en) 2021-12-14 2022-12-08 Memory device using semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/045965 WO2023112122A1 (ja) 2021-12-14 2021-12-14 半導体素子を用いたメモリ装置

Publications (1)

Publication Number Publication Date
WO2023112122A1 true WO2023112122A1 (ja) 2023-06-22

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PCT/JP2021/045965 Ceased WO2023112122A1 (ja) 2021-12-14 2021-12-14 半導体素子を用いたメモリ装置

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US (1) US12277962B2 (https=)
JP (1) JPWO2023112122A1 (https=)
KR (1) KR20240113970A (https=)
CN (1) CN118696378A (https=)
WO (1) WO2023112122A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025074607A1 (ja) * 2023-10-06 2025-04-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2025088683A1 (ja) * 2023-10-24 2025-05-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

Families Citing this family (5)

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CN118235532A (zh) * 2021-11-09 2024-06-21 新加坡优尼山帝斯电子私人有限公司 半导体内存装置及半导体内存装置的制造方法
WO2024042609A1 (ja) * 2022-08-23 2024-02-29 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024079816A1 (ja) * 2022-10-12 2024-04-18 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2024134761A1 (ja) * 2022-12-20 2024-06-27 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
JPWO2025013138A1 (https=) 2023-07-07 2025-01-16

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JP2006080280A (ja) * 2004-09-09 2006-03-23 Toshiba Corp 半導体装置およびその製造方法
JP2008218556A (ja) * 2007-03-01 2008-09-18 Toshiba Corp 半導体記憶装置

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JP2004326864A (ja) * 2003-04-22 2004-11-18 Toshiba Corp 不揮発性半導体メモリ
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CN118235532A (zh) * 2021-11-09 2024-06-21 新加坡优尼山帝斯电子私人有限公司 半导体内存装置及半导体内存装置的制造方法

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JP2008218556A (ja) * 2007-03-01 2008-09-18 Toshiba Corp 半導体記憶装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025074607A1 (ja) * 2023-10-06 2025-04-10 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置
WO2025088683A1 (ja) * 2023-10-24 2025-05-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体素子を用いたメモリ装置

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Publication number Publication date
US20230186966A1 (en) 2023-06-15
JPWO2023112122A1 (https=) 2023-06-22
KR20240113970A (ko) 2024-07-23
CN118696378A (zh) 2024-09-24
US12277962B2 (en) 2025-04-15

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