JPWO2025013138A1 - - Google Patents
Info
- Publication number
- JPWO2025013138A1 JPWO2025013138A1 JP2025532234A JP2025532234A JPWO2025013138A1 JP WO2025013138 A1 JPWO2025013138 A1 JP WO2025013138A1 JP 2025532234 A JP2025532234 A JP 2025532234A JP 2025532234 A JP2025532234 A JP 2025532234A JP WO2025013138 A1 JPWO2025013138 A1 JP WO2025013138A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2023/025322 WO2025013138A1 (ja) | 2023-07-07 | 2023-07-07 | 半導体素子を用いたメモリ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2025013138A1 true JPWO2025013138A1 (https=) | 2025-01-16 |
Family
ID=94175760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025532234A Pending JPWO2025013138A1 (https=) | 2023-07-07 | 2023-07-07 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12592278B2 (https=) |
| JP (1) | JPWO2025013138A1 (https=) |
| WO (1) | WO2025013138A1 (https=) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Ｍｏｓ型半導体装置 |
| JPH03171768A (ja) | 1989-11-30 | 1991-07-25 | Toshiba Corp | 半導体記憶装置 |
| JP3808763B2 (ja) | 2001-12-14 | 2006-08-16 | 株式会社東芝 | 半導体メモリ装置およびその製造方法 |
| JP5010192B2 (ja) * | 2006-06-22 | 2012-08-29 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JP5078338B2 (ja) * | 2006-12-12 | 2012-11-21 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| KR101442175B1 (ko) * | 2008-05-23 | 2014-09-18 | 삼성전자주식회사 | 반도체 메모리 장치 및 이 장치의 메모리 셀 어레이의 배치방법 |
| US8755227B2 (en) * | 2012-01-30 | 2014-06-17 | Phison Electronics Corp. | NAND flash memory unit, NAND flash memory array, and methods for operating them |
| JP2021048324A (ja) * | 2019-09-19 | 2021-03-25 | キオクシア株式会社 | メモリデバイス |
| US20220367473A1 (en) | 2020-12-25 | 2022-11-17 | Unisantis Electronics Singapore Pte. Ltd. | Memory device using semiconductor element |
| CN116724354A (zh) | 2020-12-25 | 2023-09-08 | 新加坡优尼山帝斯电子私人有限公司 | 包含半导体元件的存储器装置 |
| WO2022239237A1 (ja) | 2021-05-14 | 2022-11-17 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
| EP4454432A4 (en) | 2021-10-01 | 2025-12-03 | Neo Semiconductor Inc | 3D MEMORY CELLS AND NETWORK ARCHITECTURES |
| CN118696378A (zh) | 2021-12-14 | 2024-09-24 | 新加坡优尼山帝斯电子私人有限公司 | 使用半导体元件的内存装置 |
-
2023
- 2023-07-07 JP JP2025532234A patent/JPWO2025013138A1/ja active Pending
- 2023-07-07 WO PCT/JP2023/025322 patent/WO2025013138A1/ja not_active Ceased
-
2024
- 2024-07-03 US US18/763,776 patent/US12592278B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US12592278B2 (en) | 2026-03-31 |
| US20250014636A1 (en) | 2025-01-09 |
| WO2025013138A1 (ja) | 2025-01-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20251222 |