WO2023108776A1 - 显示面板及显示装置 - Google Patents
显示面板及显示装置 Download PDFInfo
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- WO2023108776A1 WO2023108776A1 PCT/CN2021/140619 CN2021140619W WO2023108776A1 WO 2023108776 A1 WO2023108776 A1 WO 2023108776A1 CN 2021140619 W CN2021140619 W CN 2021140619W WO 2023108776 A1 WO2023108776 A1 WO 2023108776A1
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- 239000000758 substrate Substances 0.000 claims description 50
- 239000010409 thin film Substances 0.000 claims description 42
- 125000006850 spacer group Chemical group 0.000 claims description 20
- 230000007704 transition Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 422
- 239000002184 metal Substances 0.000 description 29
- 229910052751 metal Inorganic materials 0.000 description 29
- 238000000034 method Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- 238000000059 patterning Methods 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 10
- 239000001301 oxygen Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Definitions
- the present application relates to the field of display technology, in particular to a display panel and a display device having the display panel.
- OLED Organic Light-Emitting Diode
- the cathode layer is usually made of a semi-transparent metal thin layer, such as Mg-Ag alloy.
- the light transmittance of the cathode can be improved to a certain extent by reducing its thickness, but it is still difficult to meet the light input requirements of the camera.
- Embodiments of the present application provide a display panel and a display device, which can increase the light transmittance of the functional display sub-region, reduce the stress on the patterning of the second electrode layer, and improve the yield of the display panel.
- An embodiment of the present application provides a display panel, the display panel includes a regular display area and a functional display area adjacent to the regular display area, and the display panel further includes:
- the second electrode layer is arranged on the side of the light-emitting layer away from the driving circuit layer. open mouth
- the drive circuit layer is provided with a concavo-convex structure on a side facing the second electrode layer corresponding to the position of the light-transmitting opening.
- the driving circuit layer includes:
- the organic spacer layer is provided with a concavo-convex structure on a side facing the second electrode layer corresponding to the position of the light-transmitting opening.
- the driving circuit layer includes:
- a thin film transistor layer arranged on one side of the organic substrate layer
- a pixel definition layer disposed on a side of the thin film transistor layer away from the organic substrate layer, the pixel definition layer includes a plurality of pixel openings corresponding to the first light-emitting pixels or the second light-emitting pixels;
- the pixel definition layer corresponds to the position of the light-transmitting opening, and a concave-convex structure is provided on a side facing the second electrode layer.
- the driving circuit layer includes:
- a thin film transistor layer arranged on one side of the organic substrate layer
- a pixel definition layer disposed on the side of the thin film transistor layer away from the organic substrate layer
- the driving circuit layer is provided with a groove corresponding to the position of the light-transmitting opening, the bottom surface of the groove extends to the organic substrate layer, and the organic substrate layer corresponds to the position of the light-transmitting opening, facing the first One side of the second electrode layer is provided with a concavo-convex structure.
- the number of the first light-emitting pixels is the same as the number of the second light-emitting pixels.
- the functional display area includes a light-transmitting sub-area and a transition sub-area between the light-transmitting sub-area and the conventional display area;
- the driving circuit layer further includes a light shielding layer
- the light shielding layer includes a plurality of first light shielding parts, a plurality of second light shielding parts and a plurality of first light shielding parts and a plurality of light shielding parts arranged in the functional display area.
- the third light-shielding part provided by the second light-shielding part, the second light-shielding part is connected between two adjacent first light-shielding parts, or connected between the first light-shielding part and the third light-shielding part Among them, one of the first light-shielding parts is disposed corresponding to one of the first light-emitting pixels, and the third light-shielding part is at least partially overlapped with the transition sub-region.
- the second electrode layer corresponds to the area surrounded by the adjacent first light-shielding portion and the second light-shielding portion in the functional display area, and/or corresponds to the corresponding
- the light-transmitting opening is provided in an area surrounded by the adjacent first light-shielding portion, the second light-shielding portion, and the third light-shielding portion, and the light-transmitting opening does not overlap with the light-shielding layer.
- the second electrode layer includes a first sub-electrode corresponding to the first light-shielding part and a second sub-electrode corresponding to the second light-shielding part, and is adjacent to The first sub-electrode and the second sub-electrode are disposed around the light-transmitting opening;
- the shape of the first sub-electrode is the same as that of the first light-shielding portion, and the shape of the second sub-electrode is the same as that of the second light-shielding portion.
- the edges of the first light-shielding portion, the second light-shielding portion and the third light-shielding portion are wavy or jagged.
- the shape of the second light shielding portion is curved.
- the driving circuit layer further includes a first transistor set corresponding to the functional display area and a second transistor set corresponding to the normal display area;
- the light-shielding layer further includes a fourth light-shielding portion located in the normal display area and corresponding to the second transistor, and the number of the first light-shielding portions in the same unit area is the same as the number of the fourth light-shielding portions .
- the driving circuit layer further includes a first wiring that is electrically connected to the first transistor and provides a driving signal for the first transistor, and is connected between the first transistor and the first transistor. the second wiring between the first light-emitting pixels;
- the second light-shielding portion overlaps with the first wiring and/or the second wiring.
- the first transistor is disposed in the transition sub-region, and in the light-transmitting sub-region, the second light-shielding portion overlaps with the second wiring, and the The width of the second light-shielding portion is larger than the width of the second wiring.
- the first wiring is arranged around the edge of the light-transmitting sub-area in the transition sub-area, and the third light-shielding part is connected to the edge of the light-transmitting sub-area.
- the first traces are at least partially overlapped.
- the first transistor is arranged in the light-transmitting sub-region, the first light-shielding portion overlaps with the first transistor, and the second light-shielding portion overlaps with the first light-shielding portion.
- the traces are overlapped, and the width of the second light shielding portion is greater than the width of the first traces.
- a display device includes a display panel and a photosensitive element, the display panel includes a conventional display area and a functional display area adjacent to the conventional display area, the photosensitive element and The corresponding setting of the functional display area of the display panel;
- the display panel also includes:
- the second electrode layer is arranged on the side of the light-emitting layer away from the driving circuit layer. open mouth
- the drive circuit layer is provided with a concavo-convex structure on a side facing the second electrode layer corresponding to the position of the light-transmitting opening.
- the driving circuit layer includes:
- the organic spacer layer is provided with the concave-convex structure on a side facing the second electrode layer corresponding to the position of the light-transmitting opening.
- the driving circuit layer includes:
- a thin film transistor layer arranged on one side of the organic substrate layer
- a pixel definition layer disposed on a side of the thin film transistor layer away from the organic substrate layer, the pixel definition layer includes a plurality of pixel openings corresponding to the first light-emitting pixels or the second light-emitting pixels;
- the pixel definition layer corresponds to the position of the light-transmitting opening, and the concave-convex structure is provided on a side facing the second electrode layer.
- the driving circuit layer includes:
- a thin film transistor layer arranged on one side of the organic substrate layer
- a pixel definition layer disposed on the side of the thin film transistor layer away from the organic substrate layer
- the driving circuit layer is provided with a groove corresponding to the position of the light-transmitting opening, the bottom surface of the groove extends to the organic substrate layer, and the organic substrate layer corresponds to the position of the light-transmitting opening, facing the first One side of the second electrode layer is provided with the concave-convex structure.
- the number of the first light-emitting pixels is the same as the number of the second light-emitting pixels.
- this application provides a concave-convex structure located in the functional display area on the side of the driving circuit layer facing the second electrode layer, and a light-transmitting opening is formed at the position of the second electrode layer corresponding to the concave-convex structure.
- the concave-convex structure can reduce the vertical stress on the second electrode layer and reduce the warpage formed when the edge of the second electrode layer is peeled off.
- the raised height, and then improve the yield rate of the display panel; and the present application patterned the second electrode layer in the functional display area, so as to improve the light transmittance of the functional display area.
- FIG. 1 is a schematic plan view of a display panel provided in an embodiment of the present application.
- FIG. 2 is a schematic structural diagram of a display panel provided by an embodiment of the present application.
- FIG. 3 is a schematic structural diagram of a light-shielding layer in the functional display area of the display panel provided by the embodiment of the present application;
- FIG. 4 is another structural schematic diagram of a light-shielding layer in the functional display area of the display panel provided by the embodiment of the present application;
- FIG. 5 is another structural schematic diagram of the light-shielding layer in the functional display area of the display panel provided by the embodiment of the present application;
- FIG. 6 is a schematic structural diagram of a second electrode layer in the functional display area of the display panel provided by the embodiment of the present application.
- FIG. 7 is a schematic diagram of the side structure of the second electrode layer in the functional display area provided by the display panel provided by the embodiment of the present application;
- FIG. 8 is another schematic structural diagram of a display panel provided by an embodiment of the present application.
- FIG. 9 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application.
- FIG. 10 is a schematic diagram of a process structure in a light-transmitting region of a display panel provided by an embodiment of the present application.
- the embodiment of the present application provides a display panel. Please refer to FIG. 1, FIG. 2 and FIG. 3.
- the display panel includes a conventional display area 101 and a functional display area 102 adjacent to the conventional display area 101.
- the first electrode layer 61 is disposed in the driving circuit layer
- the light emitting layer 63 is disposed on one side of the driving circuit layer
- the second electrode layer 20 is disposed on the side of the light emitting layer 63 away from the driving circuit layer
- the light emitting layer 63 includes The first light-emitting pixel 631 arranged in the functional display area 102 and the second light-emitting pixel 632 arranged in the conventional display area 101;
- the second electrode layer is arranged in the functional display area 102 between adjacent first light-emitting pixels 631 The light-transmitting opening 201.
- the side of the driving circuit layer facing the second electrode layer 20 is provided with a concave-convex structure 11 corresponding to the light-transmitting opening 201 .
- the embodiment of the present application provides the concave-convex structure 11 located in the functional display area 102 on the side of the driving circuit layer facing the second electrode layer 20, and the position of the second electrode layer 20 corresponding to the concave-convex structure 11 is formed with The light-transmitting opening 201, and then in the process of forming the light-transmitting opening 201 in the second electrode layer 20, when the second electrode layer 20 on the concave-convex structure 11 is peeled off, the concave-convex structure 11 can reduce the vertical force of the second electrode layer 20.
- the driving circuit layer includes an organic spacer layer 10, and the organic spacer layer 10 can be any organic film layer in the driving circuit layer, wherein the concave-convex structure 11 is disposed on the organic spacer layer.
- the light-transmitting opening 201 can expose the upper surface of the concave-convex structure 11 .
- the functional display area 102 can be used to place the photosensitive device of the camera.
- the shape of the functional display area 102 includes a circle, an ellipse, a square or other polygons, which is not limited here, and in the embodiment of the application, the function display The region 102 is an ellipse as an example for illustration.
- the light-transmitting sub-region 1021 is circular
- the transitional sub-region 1022 is an elliptical ring.
- the display panel includes a driving circuit layer, and a light emitting layer 63 and a second electrode layer 20 disposed on the driving circuit layer.
- the driving circuit layer includes an organic substrate layer 40, a thin film transistor layer 50 disposed on the organic substrate layer 40, a first electrode layer 61 disposed on the thin film transistor layer 50, and a pixel definition layer 70; and the light emitting layer 63 is disposed on On the pixel definition layer 70 , the second electrode layer 20 is disposed on the light emitting layer 63 and the pixel definition layer 70 .
- the pixel definition layer 70 is the organic spacer layer 10
- the first electrode layer 61 can be an anode layer
- the second electrode layer 20 can be a cathode layer.
- the organic substrate layer 40 includes at least one organic flexible sub-layer and at least one water-oxygen barrier sub-layer stacked, and in this embodiment, two organic flexible sub-layers and two water-oxygen barrier sub-layers are taken as examples for illustration. .
- the organic substrate layer 40 includes a first organic flexible sub-layer 41 , a first water-oxygen barrier sub-layer 43 , a second organic flexible sub-layer 42 and a second water-oxygen barrier sub-layer 44 which are stacked.
- the thin film transistor layer 50 includes a thin film transistor device 51 disposed on the organic substrate layer 40 and an insulating layer covering the thin film transistor device 51; further, the insulating layer includes a passivation layer 53 disposed on the organic substrate layer 40, a first The gate insulating layer 54, the second gate insulating layer 55 and the interlayer insulating layer 56; the thin film transistor device 51 includes an active layer disposed on the organic substrate layer 40 and covered by the passivation layer 53, disposed on the passivation layer 53 The first gate on and covered by the first gate insulating layer 54, the second gate disposed on the first gate insulating layer 54 and covered by the second gate insulating layer 55, and the second gate disposed on the second gate insulating layer 54 The source and drain electrodes on layer 55 and covered by interlayer insulating layer 56 .
- the display panel further includes a light-shielding layer 30 disposed in the driving circuit layer.
- the light-shielding layer 30 is disposed in the organic substrate layer 40 and can be located in any organic flexible sub-layer or any
- the light shielding layer 30 is disposed on the second organic flexible sublayer 42 as an example, that is, the light shielding layer 30 is disposed on the second organic flexible sublayer 42 and the second water oxygen barrier layer. between barrier sublayers 44 .
- the light-shielding layer 30 includes a plurality of first light-shielding portions 31, a plurality of second light-shielding portions 32, and a third light-shielding portion 33 arranged in the functional display area 102, and a fourth light-shielding portion 34 located in the conventional display area 101.
- a second light shielding portion 32 is arranged between any adjacent two first light shielding portions 31, a third light shielding portion 33 is arranged around a plurality of first light shielding portions 31 and a plurality of second light shielding portions 32, and the first light shielding portion
- the portion 31 and the second shielding portion 32 are disposed in the light-transmitting sub-region 1021
- the third light-shielding portion 33 is disposed around the light-transmitting sub-region 1021 and at least partially overlapped with the transitional sub-region 1022 .
- the thin film transistor device 51 includes a first transistor corresponding to the functional display area 102 and a second transistor corresponding to the normal display area 101, wherein the light-shielding layer 30 also includes a fourth light-shielding layer arranged in the normal display area 101 part 34, and each second transistor is correspondingly provided with a fourth light-shielding part 34, the fourth light-shielding part 34 is arranged under the second transistor, which can play the role of light-shielding, so as to prevent ambient light from shining on the thin film transistor device 51, and
- the thin film transistor layer 50 also includes a conduction portion 52 connected to the fourth light shielding portion 34, wherein the conduction portion 52 can load the voltage signal of any layer in the thin film transistor layer 50 into the fourth light shielding portion 34 to improve Damage to the second transistor by electrostatic phenomena.
- the material of the light shielding layer 30 includes metal materials such as Al, Pt, Pd, Ag, Mo, Li, W, etc., and the thickness of the light shielding layer 30 is 500 ⁇ to 5000 ⁇ .
- the pixel definition layer 70 is disposed on the TFT layer 50 , and the pixel definition layer 70 is formed with a plurality of pixel openings 701 , wherein the plurality of pixel openings 701 can be located in the normal display area 101 and the light-transmitting sub-area 1021 .
- the shape of the pixel opening 701 in the light-transmitting sub-region 1021 can be the same as or different from the shape of the pixel opening 701 in the conventional display area 101, and in the same unit area, the number of pixel openings in the light-transmitting sub-region 1021 It is the same as the number of pixel openings located in the conventional display area 101 .
- the display panel further includes a first electrode layer 61, a light emitting layer 63, and a common layer 62.
- the first electrode layer 61 is disposed on the interlayer insulating layer 56 and is disposed corresponding to the pixel opening 701.
- the common layer 62 includes a layer disposed on the pixel definition layer. 70 and covering the first common layer 621 and the second common layer 622 of the plurality of pixel openings 701, the light emitting layer 63 includes a light emitting layer disposed in each pixel opening 701 and between the first common layer 621 and the second common layer 622 pixels, and the luminous pixels include first luminous pixels 631 located in the light-transmitting sub-region 1021 and second luminous pixels 632 located in the conventional display region 101 .
- the first common layer 621 may include a hole injection layer and a hole transport layer
- the second common layer 622 may include an electron injection layer and an electron transport layer.
- the first transistor is electrically connected to the first light-emitting pixel 631
- the second transistor is electrically connected to the second light-emitting pixel 632, so as to respectively provide the first light-emitting pixel 631 and the second light-emitting pixel 632
- each first light-shielding part 31 is set corresponding to a first light-emitting pixel 631
- each fourth light-shielding part 34 is set corresponding to a second transistor, that is, each fourth light-shielding part 34 corresponds to a second light-emitting pixel 631.
- the pixels 632 are arranged, and in the same unit area, the number of the first light-shielding parts 31 is the same as the number of the fourth light-shielding parts 34 .
- the thin film transistor layer 50 also includes a first wiring that is electrically connected to the first transistor and provides a driving signal, and a second wiring that is connected between the first transistor and the first light-emitting pixel 631 .
- the second light-shielding portion 32 is overlapped with the first wiring and/or the second wiring.
- the first transistor when the first transistor is disposed in the transition sub-region 1022, in the light-transmitting sub-region 1021, the second light-shielding portion 32 is overlapped with the second wiring, and the width of the second light-shielding portion 32 is larger than that of the second wiring.
- the first transistor can be disposed in the transition sub-region 1022, so that no transistor devices need to be disposed in the light-transmitting sub-region 1021, and the light transmittance of the light-transmitting sub-region 1021 can be further improved.
- the first routing is arranged around the edge of the phototransmissive sub-region 1021 in the transition sub-region 1022
- the third light shielding portion 33 is at least partially overlapped with the first routing arranged around the edge of the phototransmissive sub-region 1021 .
- each first transistor is overlapped with a first light-shielding portion 31, and the second light-shielding portion 32 is overlapped with the first wiring, and the second light-shielding portion 32
- the width is greater than the width of the first trace.
- the second electrode layer 20 is disposed on the light-emitting layer 63 and covers the side of the second common layer 622 away from the first common layer 621.
- the second electrode layer 20 is in the functional display area 102, corresponding to the corresponding The area surrounded by the adjacent first light shielding portion 31 and the second light shielding portion 32 and the area surrounded by the corresponding adjacent first light shielding portion 31, the second light shielding portion 32, and the third light shielding portion 33 are formed with a light transmission opening 201, that is, The light-transmitting opening 201 is not overlapped with the light-shielding layer 30 .
- the second electrode layer 20 includes a plurality of first sub-electrodes 21 located in the light-transmitting sub-region 1021, a second sub-electrode 22 connected between any two adjacent first sub-electrodes 21, and a plurality of second sub-electrodes 22 located in the conventional display
- the third sub-electrode 23 in the area 101 and completely covering the second common layer 622, in the embodiment of the present application, the second electrode layer 20 located in the functional display area 102 is patterned to form a light-transmitting opening 201, so as to increase the light transmittance of the second electrode layer 20 in the functional display area 102, thereby satisfying the light transmittance requirement of the functional display area 102.
- the side of the pixel definition layer 70 facing the second electrode layer 20 is provided with a concave-convex structure 11, and the concave-convex structure 11 is located in the light-transmitting sub-region 1021, and the light-transmitting opening 201 exposes the concave-convex structure 11, which is compatible with the plurality of first
- the sub-electrodes 21 and the second sub-electrodes 22 are arranged in a staggered manner.
- the method of laser lift-off is often used for preparation, but in the embodiment of the present application, the area of the second electrode layer 20 (that is, the transparent opening 201) will need to be peeled off.
- the concave-convex structure 11 is provided in the photonic region 1021 ), which can reduce the vertical stress on the second electrode layer 20 during the peeling process, so as to improve the yield rate of the patterning of the second electrode layer 20 .
- the concave-convex structure 11 can be a plurality of protrusions formed on the surface of the organic spacer layer 10, and the plurality of protrusions are spaced apart or connected, and the cross-sectional shape of each protrusion can be arc-shaped, so that the concave-convex The structure is wavy.
- the light-shielding layer 30 includes a plurality of first light-shielding parts 31 and a plurality of second light-shielding parts 32 located in the functional display area 102 and surrounds a plurality of first light-shielding parts 31 and a plurality of second light-shielding parts.
- the third light-shielding portion 33 provided by the light-shielding portion 32, wherein each first sub-electrode 21 is disposed on a corresponding first light-shielding portion 31, and each second sub-electrode 22 is disposed on a corresponding second light-shielding portion 32 That is, in the manufacturing process, in the embodiment of the present application, the first light shielding portion 31 , the second light shielding portion 32 and the third light shielding portion 33 are used as masks to pattern the second electrode layer 20 .
- each first sub-electrode 21 on the light-shielding layer 30 is located within the coverage of the corresponding first light-shielding portion 31, and the orthographic projection of each second sub-electrode 22 on the light-shielding layer 30 is located within the coverage of the corresponding second light-shielding portion.
- the area of each first sub-electrode 21 is smaller than the area of the corresponding first light-shielding portion 31
- the area of each second sub-electrode 22 is smaller than the area of the corresponding second light-shielding portion 32 .
- each first sub-electrode 21 on the light-shielding layer 30 is the same as the shape of the corresponding first light-shielding portion 31, and the shape of the orthographic projection of each second sub-electrode 22 on the light-shielding layer 30 is the same as that of the corresponding second light-shielding portion 31.
- the shape of the portion 32 is the same, as shown in FIGS. 4 and 6 .
- each second light-shielding portion 32 is greater than the width of the corresponding second sub-electrode 22 by at least 2 microns to prevent laser damage to the second sub-electrode 22 .
- the first transistor and the first wiring corresponding to the first light-emitting pixel 631 in the functional display area 102 are all arranged in the transition sub-area 1022, and the first wiring can be arranged around the phototransmissive sub-region 1021, and connect the first transistor and the first light-emitting pixel 631 through the second wiring
- the third light-shielding part 33 includes a side close to the functional display area 102 , the orthographic projection of the first wiring on the light-shielding layer 30 is located on the side of the inner boundary of the third light-shielding portion 33 away from the functional display area 102, and the second wiring is in the functional display area 102 with the
- the distance from the orthographic projection of the first wiring on the light shielding layer 30 to the inner boundary of the third light shielding portion 33 is greater than or equal to 1 micron.
- the first light shielding portion 31, the second light shielding portion 32 located in the functional display area 102, and the third light shielding portion 33 surrounding the functional display area 102 are provided in the light shielding layer 30, and the second light shielding portion
- the first light-shielding portion 31 and the second light-shielding portion 32 are located in the light-transmitting sub-region 1021, and in the patterning process of the second electrode layer 20 by laser lift-off, the light-shielding layer 30 can be directly used as a mask to remove the light-transmitting sub-regions.
- the second electrode layer 20 in the area 1021 that is not blocked by the first light shielding portion 31 and the second light shielding portion 32 improves the light transmittance in the functional display area 102; further, in the embodiment of the present application, the pixel definition layer 70 is in the transparent
- the concave-convex structure 11 is formed in the photonic region 1021 , thereby reducing the vertical stress on the second electrode layer 20 during the peeling process, so as to improve the yield rate of the patterning of the second electrode layer 20 .
- each second light-shielding portion 32 can be arranged in a curve, as shown in FIG. Arranged in a curved line, the diffraction of light by the second sub-electrode 22 can be reduced, and the effect of light output and light transmission in the functional display area 102 can be improved.
- the edges of the first light-shielding portion 31, the second light-shielding portion 32, and the third light-shielding portion 33 are all in a zigzag shape, as shown in FIG.
- the edges of the electrodes 23 can be jagged to further reduce the diffraction of light by the second electrode layer 20 in the functional display area 102, so as to further improve the light output and light transmission effects in the functional display area 102;
- the first Edges of the light shielding portion 31 , the second light shielding portion 32 and the third light shielding portion 33 may also be wavy.
- the concave-convex structure 11 is formed in the position of the pixel definition layer 70 corresponding to the light-transmitting sub-region 1021 in the embodiment of the present application, the vertical stress on the second electrode layer 20 during the patterning process can be reduced, and the second electrode layer 20 can be further reduced.
- the edge of the second electrode layer 20 forms a raised height.
- the convex part 202 is arranged on the side of the second electrode layer 20 away from the organic spacer layer 10.
- the laser lift-off is directly used on the edge of the metal film layer.
- the protrusions 202 formed during the patterning process of the second electrode layer 20 in the embodiment of the present application are arc-shaped and have a small height, thereby improving the yield rate of the subsequent packaging process.
- the difference between this embodiment and the previous embodiment is that the organic spacer layer 10 is an organic flexible sublayer in the organic substrate layer 40 .
- the organic spacer layer 10 is the second organic flexible sub-layer 42
- the light-shielding layer 30 is disposed on the first organic flexible sub-layer 41 and the water-oxygen barrier sub-layer 43
- the concave-convex structure 11 is formed on the second organic flexible sub-layer 42.
- the organic flexible sub-layer 42 is away from the surface of the first organic flexible sub-layer 41 and is located in the light-transmitting sub-region 1021 .
- the distance from the concave-convex structure 11 to the second electrode layer 20 along the first direction is less than or equal to the distance from the light shielding layer 30 to the second electrode layer 20 along the first direction, wherein the first direction is the thickness direction of the display panel, and
- the light-shielding layer 30 can be used as a mask during the patterning process of the second electrode layer 20 .
- the display panel also includes a plurality of grooves 501 disposed in the light-transmitting sub-region 1021.
- each groove 501 passes through the second electrode layer 20, the pixel definition layer 70, and the thin film transistor layer 50, so as to The upper surface of the second organic flexible sub-layer 42 is exposed, that is, the concave-convex structure 11 is disposed at the bottom of the groove 501 .
- the orthographic projection of the second electrode layer 20 on the organic spacer layer 10 is staggered from the orthographic projection of the plurality of grooves 501 on the organic spacer layer 10 .
- grooves are dug in the light-transmitting sub-region 1021, and compared with the previous embodiment, the light transmittance in the light-transmitting sub-region 1021 is further improved; similarly, in this embodiment, the organic The spacer layer 10 forms a concave-convex structure 11 in the light-transmitting sub-region 1021 , thereby reducing the vertical stress on the second electrode layer 20 during the peeling process, so as to improve the yield rate of the patterning of the second electrode layer 20 .
- the organic spacer layer 10 can also be any organic film layer in the second electrode layer 20 and the organic substrate layer 40, and a trench can be opened between the organic film layer and the second electrode layer 20, So that the second electrode layer 20 can cover the organic spacer layer 10 during the manufacturing process.
- the light-transmitting sub-region 1021 accounts for 70% to 90% of the functional display area 102 , and can increase the light transmittance of the functional display area 102 by 30% to 60%.
- the embodiment of the present application also provides a manufacturing method of the display panel described in the above embodiments, please refer to FIG. 1, FIG. 2, FIG. 3, FIG. 9 and FIG. 10, the display panel includes a conventional display area 101 and a conventional The display area 101 is adjacent to the function display area 102 .
- the manufacturing method of the display panel includes:
- the light-emitting layer 63 includes: a first light-emitting pixel 631 formed in the functional display area 102 and a second light-emitting pixel 632 formed in the normal display area 101 .
- the second electrode layer 20 is formed in the functional display area 102 with a transparent layer located between adjacent first light emitting pixels 631 and corresponding to the concave-convex structure 11 Light opening 201 .
- FIG. 1 , FIG. 2 , FIG. 3 , FIG. 9 and FIG. 10 please continue to refer to FIG. 1 , FIG. 2 , FIG. 3 , FIG. 9 and FIG. 10 .
- An organic substrate layer 40 is provided, and the organic substrate layer 40 includes a laminated first organic flexible sublayer 41, a first water-oxygen barrier sublayer 43, a second organic flexible sublayer 42, and a second water-oxygen barrier sublayer 44; wherein, the organic The light-shielding layer 30 between the second organic flexible sub-layer 42 and the second water-oxygen barrier sub-layer 44 is formed in the substrate layer 40 .
- the light-shielding layer 30 includes a first light-shielding portion 31 , a second light-shielding portion 32 , a third light-shielding portion 33 and a fourth light-shielding portion 34 , wherein the first light-shielding portion 31 and the second light-shielding portion 32 are located in the light-transmitting sub-region 1021 , the third light-shielding portion 33 is disposed around the light-transmitting sub-region 1021 , and the fourth light-shielding portion 34 is located in the normal display region 101 .
- the material of the light shielding layer 30 includes metal materials such as Al, Pt, Pd, Ag, Mo, Li, W, etc., and the thickness of the light shielding layer 30 is 500 ⁇ to 5000 ⁇ .
- a thin film transistor layer 50 is formed on the organic substrate layer 40.
- the thin film transistor layer 50 includes a thin film transistor device 51 disposed on the organic substrate layer 40 and an insulating layer covering the thin film transistor device 51;
- the thin film transistor device 51 includes the passivated layer 53 disposed on the organic substrate layer 40
- the covering active layer, the first gate disposed on the passivation layer 53 and covered by the first gate insulating layer 54, the first gate disposed on the first gate insulating layer 54 and covered by the second gate insulating layer 55 The second gate and the source and drain disposed on the second gate insulating layer 55 and covered by the interlayer insulating layer 56 .
- the thin film transistor device 51 includes a first transistor corresponding to the functional display area 102 and a second transistor corresponding to the normal display area 101, wherein the light-shielding layer 30 also includes The fourth light-shielding part 34 inside, and each second transistor is provided with a fourth light-shielding part 34 correspondingly, the fourth light-shielding part 34 is arranged under the second transistor, can play the role of light-shielding, to prevent ambient light from shining on the thin film transistor On the device 51, and the thin film transistor layer 50 also includes a conduction portion 52 connected to the third light shielding portion 33, wherein the conduction portion 52 can load the voltage signal in any layer of the thin film transistor layer 50 to the fourth light shielding portion 34, to improve the damage to the thin film transistor device 51 caused by static electricity.
- a plurality of first electrode layers 61 are formed on the thin film transistor layer 50 , and the plurality of first electrode layers 61 can be located in the light-transmitting sub-region 1021 and in the conventional display region 101 .
- An organic spacer layer 10 (that is, a pixel definition layer 70 ) is formed on the thin film transistor layer 50 and a plurality of first electrode layers 61 , and a plurality of pixels located in the light-transmitting sub-region 1021 and the conventional display region 101 are formed in the pixel definition layer 70 .
- Each pixel opening 701 and the concave-convex structure 11 located in the light-transmitting sub-region 1021 are formed, and each pixel opening 701 correspondingly exposes a top surface of the first electrode layer 61 , and the concave-convex structure 11 and each pixel opening 701 are staggered.
- the concave-convex structure 11 can be prepared by using a semi-transparent mask during the manufacturing process.
- a patterned metal sacrificial layer 12 is formed on the pixel definition layer 70 to form the metal sacrificial layer 12 located in the light-transmitting sub-region 1021 and on the concave-convex structure 11 , and the metal sacrificial layer 12 is conformally disposed on the concave-convex structure 11 , that is, the metal sacrificial layer 12 is disposed in close contact with the concave-convex structure 11, and a concave-convex film layer morphology is also formed.
- the material of the metal sacrificial layer 12 includes Al, Pt, Pd, Ag, Mo, Li, W and other metal materials, and the thickness of the metal sacrificial layer 12 may be 100 ⁇ to 2000 ⁇ .
- the common layer 62 includes a first common layer 621 and a second common layer 622, and then form a metal electrode layer on the second common layer 622, As a result, the common layer 62 and the metal electrode layer are both conformally disposed on the metal sacrificial layer 12 , and then the concave-convex film morphology is also formed on the common layer 62 and the metal electrode layer.
- the functional display area 102 is irradiated with laser light, specifically the light-transmitting sub-area 1021, and the light-shielding layer 30 is used as a mask, and the laser is emitted from the area not covered by the light-shielding layer 30.
- the patterned second electrode layer 20 located in the functional display area 102 which includes A plurality of first sub-electrodes 21 located in the light-transmitting sub-region 1021 and a second sub-electrode 22 connected between any two adjacent first sub-electrodes 21 .
- the energy of the laser cannot be too low, otherwise the metal electrode layer will not be completely peeled off and there will be residues, and the energy of the laser cannot be too high, otherwise the second electrode layer 20 and the parts below the second electrode layer 20 will be damaged.
- the thermal effect brought by too high energy will cause large-area curling at the edge of the film layer, or even tear most of the film layer, thereby affecting the second electrode layer 20 in the unirradiated area, and causing subsequent Encapsulation failure and abnormal display.
- the laminated structure of the organic spacer layer 10, the metal sacrificial layer 12, the common layer 62 and the second electrode layer 20 is shown in FIG. 62 and the second electrode layer 20 are located on the concave-convex structure 11, and the metal sacrificial layer 12, the common layer 62 and the second electrode layer 20 also form a concave-convex film layer morphology on the concave-convex structure 11, thereby reducing the metal sacrificial layer 12.
- the second organic flexible sub-layer 42 that is, the concave-convex structure 11 can be prepared on the second organic flexible sub-layer 42 by using a semi-permeable mask.
- a groove 501 can be opened in the light-transmitting sub-region 1021 through the pixel definition layer 70, the thin film transistor layer 50 and the second water-oxygen barrier sub-layer 44 to expose the second organic flexible sub-layer 42, that is, the concave-convex structure 11 is exposed.
- the common layer 62, the light emitting layer 63 and the metal electrode layer can be formed on the pixel definition layer 70, and then the functional display area 102 can be irradiated with laser light, so that the metal sacrificial layer 12 in the light-transmitting sub-area 1021 And the common layer 62 and the metal electrode layer located on the metal sacrificial layer 12 are peeled off to obtain a patterned second electrode layer 20 located in the functional display area 102, including a plurality of first sub-electrodes 21 located in the light-transmitting sub-area 1021 And the second sub-electrode 22 connected between any two adjacent first sub-electrodes 21 .
- the laminated structure of the organic spacer layer 10, the metal sacrificial layer 12, the common layer 62 and the second electrode layer 20 is shown in FIG. 62 and the second electrode layer 20 are located on the concave-convex structure 11, and the metal sacrificial layer 12, the common layer 62 and the second electrode layer 20 also form a concave-convex film layer morphology on the concave-convex structure 11, thereby reducing the second electrode layer. 20 is subjected to vertical stress when it is peeled off, so as to improve the yield rate during the patterning process of the second electrode layer 20 .
- the embodiment of the present application also provides a display device, the display device includes the display panel and the photosensitive element described in the above embodiments, and the photosensitive element is set corresponding to the functional display area 102 of the display panel; optionally, the photosensitive element
- the components may include a camera component, a fingerprint recognition component, an infrared component, etc., and the display panel provided by the embodiment of the present application can effectively improve the light transmittance of the functional display area 102, and further can effectively improve the light-sensing effect of the photosensitive element.
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Abstract
一种显示面板及显示装置，该显示面板包括常规显示区（101）与功能显示区（102），显示面板还包括驱动电路层和第二电极层（20）；第二电极层（20）设置在驱动电路层的一侧，第二电极层（20）在功能显示区（102）中设置有透光开口（201）；其中，驱动电路层朝向第二电极层（20）的一侧设置有与透光开口（201）对应的凹凸结构（11）。
Description
本申请涉及显示技术领域，尤其涉及一种显示面板及具有该显示面板的显示装置。
随着消费者对屏占比需求的提高，屏下摄像头式有机发光二极管(Organic Light-Emitting Diode，OLED)显示面板已成为OLED显示面板领域主流设计方案之一。
对屏下摄像头来说，必须保证摄像头正上方的透光区域中的各膜层有足够的光透过率。在传统的顶发射OLED显示面板中，考虑到电子注入势垒，阴极层通常选用半透明的金属薄层，如Mg-Ag合金等。对于金属薄层阴极来说，通过减薄其厚度能够在一定程度上提升阴极的光透过率，但是依然难以满足摄像头的进光需求。
本申请实施例提供一种显示面板及显示装置，能够提高功能显示子区的透光率，降低第二电极层图案化受到的应力，提高显示面板的良率。
本申请实施例提供一种显示面板，所述显示面板包括常规显示区以及与所述常规显示区邻接的功能显示区，所述显示面板还包括：
驱动电路层；
第一电极层，设置在所述驱动电路层中；
发光层，设置在所述驱动电路层的一侧，所述发光层包括：设置在所述功能显示区的第一发光像素和设置在所述常规显示区的第二发光像素；
第二电极层，设置在所述发光层远离所述驱动电路层的一侧，所述第二电极层在所述功能显示区中设置有位于相邻所述第一发光像素之间的透光开口；
其中，所述驱动电路层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机隔垫层，对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机衬底层；
薄膜晶体管层，设置在所述有机衬底层的一侧；
像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，所述像素定义层包括多个对应所述第一发光像素或所述第二发光像素的像素开口；
其中，所述像素定义层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机衬底层；
薄膜晶体管层，设置在所述有机衬底层的一侧；
像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，
其中，所述驱动电路层对应所述透光开口位置设置有凹槽，所述凹槽的底面延伸至所述有机衬底层，所述有机衬底层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
在本申请的一种实施例中，在相同单位面积内，所述第一发光像素的数量与所述第二发光像素的数量相同。
在本申请的一种实施例中，所述功能显示区包括透光子区以及位于所述透光子区与所述常规显示区之间的过渡子区；
所述驱动电路层还包括遮光层，所述遮光层包括设置于所述功能显示区内的多个第一遮光部、多个第二遮光部以及围绕多个所述第一遮光部和多个所述第二遮光部设置的第三遮光部，所述第二遮光部连接于相邻的两所述第一遮光部之间，或连接于所述第一遮光部与所述第三遮光部之间，其中，一所述第一遮光部对应一所述第一发光像素设置，且所述第三遮光部与所述过渡子区至少部分重叠设置。
在本申请的一种实施例中，所述第二电极层在所述功能显示区中，对应相邻所述第一遮光部和所述第二遮光部围绕的区域，和/或，对应相邻的所述第一遮光部、所述第二遮光部、所述第三遮光部围绕的区域，设置有所述透光开口，所述透光开口与所述遮光层不重叠。
在本申请的一种实施例中，所述第二电极层包括与所述第一遮光部对应设置的第一子电极以及与所述第二遮光部对应设置的第二子电极，且相邻的所述第一子电极与所述第二子电极围绕所述透光开口设置；
其中，所述第一子电极的形状与所述第一遮光部的形状相同，所述第二子电极的形状与所述第二遮光部的形状相同。
在本申请的一种实施例中，所述第一遮光部、所述第二遮光部以及所述第三遮光部的边缘为波浪状或锯齿状。
在本申请的一种实施例中，所述第二遮光部的形状为弯曲状。
在本申请的一种实施例中，所述驱动电路层还包括对应所述功能显示区设置的第一晶体管以及对应所述常规显示区设置的第二晶体管；
所述遮光层还包括位于所述常规显示区内并与所述第二晶体管对应设置的第四遮光部，相同单位面积中所述第一遮光部的数量与所述第四遮光部的数量相同。
在本申请的一种实施例中，所述驱动电路层还包括与所述第一晶体管电连接并为所述第一晶体管提供驱动信号的第一走线、连接于所述第一晶体管与所述第一发光像素之间的第二走线；
其中，在所述透光子区，所述第二遮光部与所述第一走线和/或所述第二走线重叠设置。
在本申请的一种实施例中，所述第一晶体管设置于所述过渡子区，在所述透光子区内，所述第二遮光部与所述第二走线重叠设置，且所述第二遮光部的宽度大于所述第二走线的宽度。
在本申请的一种实施例中，所述第一走线在所述过渡子区绕所述透光子区边缘设置，所述第三遮光部与绕所述透光子区边缘设置的所述第一走线至少部分重叠设置。
在本申请的一种实施例中，所述第一晶体管设置在所述透光子区，所述第一遮光部与所述第一晶体管重叠设置，所述第二遮光部与所述第一走线重叠设置，且所述第二遮光部的宽度大于所述第一走线的宽度。
根据本申请的上述目的，提供一种显示装置，所述显示装置包括显示面板和感光元件，所述显示面板包括常规显示区以及与所述常规显示区邻接的功能显示区，所述感光元件与所述显示面板的所述功能显示区对应设置；
所述显示面板还包括：
驱动电路层；
第一电极层，设置在所述驱动电路层中；
发光层，设置在所述驱动电路层的一侧，所述发光层包括：设置在所述功能显示区的第一发光像素和设置在所述常规显示区的第二发光像素；
第二电极层，设置在所述发光层远离所述驱动电路层的一侧，所述第二电极层在所述功能显示区中设置有位于相邻所述第一发光像素之间的透光开口；
其中，所述驱动电路层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机隔垫层，对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机衬底层；
薄膜晶体管层，设置在所述有机衬底层的一侧；
像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，所述像素定义层包括多个对应所述第一发光像素或所述第二发光像素的像素开口；
其中，所述像素定义层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
在本申请的一种实施例中，所述驱动电路层包括：
有机衬底层；
薄膜晶体管层，设置在所述有机衬底层的一侧；
像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，
其中，所述驱动电路层对应所述透光开口位置设置有凹槽，所述凹槽的底面延伸至所述有机衬底层，所述有机衬底层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
在本申请的一种实施例中，在相同单位面积内，所述第一发光像素的数量与所述第二发光像素的数量相同。
相较于现有技术，本申请通过在驱动电路层朝向第二电极层的一侧设置位于功能显示区内的凹凸结构，且第二电极层对应凹凸结构的位置形成有透光开口，进而在第二电极层中形成透光开口过程中，对位于凹凸结构上的第二电极层进行剥离时，凹凸结构可以降低第二电极层受到的垂直应力，降低第二电极层边缘剥离时形成的翘起的高度，进而提高显示面板的良品率；且本申请将功能显示区内的第二电极层进行图案化处理，以提高功能显示区的透光率。
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的显示面板的平面结构示意图；
图2为本申请实施例提供的显示面板的一种结构示意图；
图3为本申请实施例提供的显示面板的功能显示区内遮光层的一种结构示意图；
图4为本申请实施例提供的显示面板的功能显示区内遮光层的另一种结构示意图；
图5为本申请实施例提供的显示面板的功能显示区内遮光层的另一种结构示意图；
图6为本申请实施例提供的显示面板的功能显示区内第二电极层的一种结构示意图；
图7为本申请实施例提供的显示面板的提供的功能显示区内第二电极层的侧边结构示意图；
图8为本申请实施例提供的显示面板的另一种结构示意图；
图9为本申请实施例提供的显示面板的制作方法流程图；
图10为本申请实施例提供的显示面板的透光区内制程结构示意图。
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请实施例提供一种显示面板，请参照图1、图2以及图3，显示面板包括常规显示区101以及与常规显示区101邻接的功能显示区102，显示面板还包括驱动电路层、第一电极层61、发光层63以及第二电极层20。
进一步地，第一电极层61设置于驱动电路层中，发光层63设置于驱动电路层的一侧，第二电极层20设置于发光层63远离驱动电路层的一侧；且发光层63包括设置在功能显示区102内的第一发光像素631和设置在常规显示区101内的第二发光像素632；第二电极层在功能显示区102中设置有位于相邻第一发光像素631之间的透光开口201。
其中，驱动电路层朝向第二电极层20的一侧设置有对应透光开口201的凹凸结构11。
在实施应用过程中，本申请实施例通过在驱动电路层朝向第二电极层20的一侧设置位于功能显示区102内的凹凸结构11，且第二电极层20对应凹凸结构11的位置形成有透光开口201，进而在第二电极层20中形成透光开口201过程中，对位于凹凸结构11上的第二电极层20进行剥离时，凹凸结构11可以降低第二电极层20受到的垂直应力，降低第二电极层20边缘剥离时形成的翘起的高度，进而提高显示面板的良品率；且本申请将功能显示区102内的第二电极层20进行图案化处理，以提高功能显示区102的透光率。
需要说明的是，在本申请实施例中，驱动电路层包括有机隔垫层10，且有机隔垫层10可为驱动电路层中的任一有机膜层，其中，凹凸结构11设置于有机隔垫层10朝向第二电极层20一侧的表面上，且透光开口201可露出凹凸结构11的上表面。
具体地，在本申请的一种实施例中，请继续参照图1、图2以及图3，显示面板包括常规显示区101以及与常规显示区101邻接的功能显示区102，且功能显示区102包括透光子区1021以及位于透光子区1021与常规显示区101之间的过渡子区1022。其中，功能显示区102可用于放置摄像头的感光器件，可选的，功能显示区102的形状包括圆形、椭圆形、方形或其他多边形，在此不作限定，且本申请实施例中以功能显示区102为椭圆形为例，进行说明，具体地，其中透光子区1021为圆形，而过渡子区1022为椭圆环形。
进一步地，显示面板包括驱动电路层以及设置于驱动电路层上的发光层63和第二电极层20。具体地，驱动电路层包括有机衬底层40、设置于有机衬底层40上的薄膜晶体管层50、设置于薄膜晶体管层50上的第一电极层61和像素定义层70；且发光层63设置于像素定义层70上，第二电极层20设置于发光层63和像素定义层70上。
需要说明的是，在本实施例中，像素定义层70为有机隔垫层10，且第一电极层61可为阳极层，而第二电极层20可为阴极层。
其中，有机衬底层40包括层叠设置的至少一有机柔性子层与至少一水氧阻挡子层，且本实施例中以两层有机柔性子层以及两层水氧阻挡子层为例，进行说明。具体地，有机衬底层40包括层叠设置的第一有机柔性子层41、第一水氧阻挡子层43、第二有机柔性子层42以及第二水氧阻挡子层44。
薄膜晶体管层50包括设置于有机衬底层40上的薄膜晶体管器件51以及包覆薄膜晶体管器件51的绝缘层；进一步地，绝缘层包括依次设置于有机衬底层40上的钝化层53、第一栅极绝缘层54、第二栅极绝缘层55以及层间绝缘层56；薄膜晶体管器件51包括设置于有机衬底层40上并被钝化层53覆盖的有源层、设置于钝化层53上并被第一栅极绝缘层54覆盖的第一栅极、设置于第一栅极绝缘层54上并被第二栅极绝缘层55覆盖的第二栅极以及设置于第二栅极绝缘层55上并被层间绝缘层56覆盖的源漏极。
在本实施例中，显示面板还包括设置于驱动电路层中的遮光层30，遮光层30设置于有机衬底层40中，且可位于有机衬底层40中的任一有机柔性子层或任一水氧阻挡子层上，且本实施例中以遮光层30设置于第二有机柔性子层42上为例，进行说明，即遮光层30设置于第二有机柔性子层42与第二水氧阻挡子层44之间。具体地，遮光层30包括设置于功能显示区102内的多个第一遮光部31、多个第二遮光部32和第三遮光部33，以及位于常规显示区101内的第四遮光部34；其中，任意相邻两个第一遮光部31之间设置有一第二遮光部32，第三遮光部33围绕多个第一遮光部31和多个第二遮光部32设置，且第一遮光部31与第二遮光部32设置于透光子区1021内，而第三遮光部33围绕透光子区1021设置并与过渡子区1022至少部分重叠设置。
在本申请实施例中，薄膜晶体管器件51包括对应功能显示区102的第一晶体管以及对应常规显示区101的第二晶体管，其中，遮光层30还包括设置于常规显示区101内的第四遮光部34，且每一第二晶体管对应设置有一第四遮光部34，第四遮光部34设置于第二晶体管下方，可以起到遮光的作用，以防止环境光照射至薄膜晶体管器件51上，且薄膜晶体管层50还包括连接于第四遮光部34的导通部52，其中，导通部52可将薄膜晶体管层50中任一层中的电压信号加载到第四遮光部34中，以改善静电现象对第二晶体管的损伤。
可选的，遮光层30的材料包括Al、Pt、Pd、Ag、Mo、Li、W等金属材料，遮光层30的厚度为500Å至5000Å。
像素定义层70设置于薄膜晶体管层50上，且像素定义层70形成有多个像素开口701，其中，多个像素开口701可位于常规显示区101以及透光子区1021内。
其中，位于透光子区1021内的像素开口701的形状可与常规显示区101内的像素开口701的形状相同或不同，且相同单位面积中，位于透光子区1021内的像素开口的数量与位于常规显示区101内像素开口的数量相同。
进一步地，显示面板还包括第一电极层61、发光层63以及公共层62，第一电极层61设置于层间绝缘层56上并对应像素开口701设置，公共层62包括设置于像素定义层70上并覆盖多个像素开口701的第一公共层621与第二公共层622，发光层63包括设置于各像素开口701内并位于第一公共层621与第二公共层622之间的发光像素，且发光像素包括位于透光子区1021内的第一发光像素631以及位于常规显示区101内的第二发光像素632。可以理解的是，第一公共层621可包括空穴注入层与空穴传输层，而第二公共层622可包括电子注入层与电子传输层。
承上，在本申请实施例中，第一晶体管与第一发光像素631电性连接，第二晶体管与第二发光像素632电性连接，以分别向第一发光像素631和第二发光像素632传输电信号，对应的，每一第一遮光部31对应一个第一发光像素631设置，每一个第四遮光部34对应一个第二晶体管设置，即每一个第四遮光部34对应一个第二发光像素632设置，进而在相同单位面积中，第一遮光部31的数量与第四遮光部34的数量相同。
进一步地，薄膜晶体管层50还包括与第一晶体管电连接并提供驱动信号的第一走线、连接于第一晶体管与第一发光像素631之间的第二走线。其中，在透光子区1021中，第二遮光部32与第一走线和/或第二走线重叠设置。
具体地，当第一晶体管设置于过渡子区1022中时，在透光子区1021内，第二遮光部32与第二走线重叠设置，且第二遮光部32的宽度大于第二走线的宽度，且本实施例中可将第一晶体管设置于过渡子区1022，进而透光子区1021内不需要设置晶体管器件，可以进一步提高透光子区1021的透光率。
此外，第一走线在过渡子区1022内绕透光子区1021边缘设置，且第三遮光部33与绕透光子区1021边缘设置的第一走线至少部分重叠设置。
当第一晶体管设置于透光子区1021内时，则每一第一晶体管与一第一遮光部31重叠设置，且第二遮光部32与第一走线重叠设置，第二遮光部32的宽度大于第一走线的宽度。
第二电极层20设置于发光层63上，并覆盖于第二公共层622远离第一公共层621的一侧，在本实施例中，第二电极层20在功能显示区102内，对应相邻的第一遮光部31和第二遮光部32所围绕的区域以及对应相邻的第一遮光部31、第二遮光部32、第三遮光部33围绕的区域形成有透光开口201，即透光开口201与遮光层30不重叠设置。进一步地，第二电极层20包括位于透光子区1021内的多个第一子电极21和连接于任意相邻两个第一子电极21之间的第二子电极22、以及位于常规显示区101内并整面覆盖于第二公共层622上的第三子电极23，在本申请实施例中，对位于功能显示区102内的第二电极层20进行图案化设计以形成透光开口201，以提高功能显示区102内第二电极层20的透光率，进而可以满足功能显示区102的透光需求。
此外，像素定义层70朝向第二电极层20的一侧设置有凹凸结构11，且凹凸结构11位于透光子区1021内，且透光开口201暴露出凹凸结构11，其与多个第一子电极21以及第二子电极22错开设置。其中，在对第二电极层20进行图案化以形成透光开口201的过程中，常采用激光剥离的方法进行制备，而本申请实施例中将需要剥离第二电极层20的区域（即透光子区1021）内设置凹凸结构11，进而可以降低第二电极层20在剥离过程中受到的垂直应力，以提高第二电极层20图案化的良品率。
可选的，凹凸结构11可为形成于有机隔垫层10表面的多个凸起，且多个凸起之间相间隔或相连接，各凸起的截面形状可为弧形，以使得凹凸结构呈波浪形结构。
进一步地，在本申请实施例中，遮光层30包括位于功能显示区102内的多个第一遮光部31和多个第二遮光部32以及围绕多个第一遮光部31和多个第二遮光部32设置的第三遮光部33，其中，每一个第一子电极21设置于对应的一个第一遮光部31上，每一个第二子电极22设置于对应的一个第二遮光部32上，即在制程中，本申请实施例以第一遮光部31、第二遮光部32以及第三遮光部33作为掩膜板，对第二电极层20进行图案化处理。
各第一子电极21在遮光层30上的正投影位于对应的第一遮光部31的覆盖范围以内，各第二子电极22在遮光层30上的正投影位于对应的第二遮光部的覆盖范围以内，即各第一子电极21的面积小于对应的第一遮光部31的面积，而各第二子电极22的面积小于对应的第二遮光部32的面积。此外，各第一子电极21在遮光层30上的正投影形状与对应的第一遮光部31的形状相同，各第二子电极22在遮光层30上的正投影形状与对应的第二遮光部32的形状相同，如图4和图6所示。
需要说明的是，各第二遮光部32的宽度大于对应第二子电极22的宽度，且至少多出2微米以上，以防止激光损伤第二子电极22。此外，在本申请实施例中，为提高功能显示区102内的透光率，进而将功能显示区102内的第一发光像素631对应的第一晶体管以及第一走线皆设置于过渡子区1022内，且第一走线可绕透光子区1021设置，并通过第二走线将第一晶体管与第一发光像素631连接起来，且第三遮光部33包括靠近功能显示区102一侧的内边界，第一走线在遮光层30上的正投影位于第三遮光部33的内边界远离功能显示区102的一侧，以及第二走线在功能显示区102内与第二遮光部32重叠设置，第二走线的宽度小于第二遮光部32的宽度，以防止激光损伤第一走线、第二走线以及第一晶体管。
可选的，第一走线在遮光层30上的正投影到第三遮光部33的内边界的距离大于或等于1微米。
承上，在本申请实施例中，通过在遮光层30中设置位于功能显示区102内的第一遮光部31、第二遮光部32以及围绕功能显示区102的第三遮光部33，且第一遮光部31和第二遮光部32位于透光子区1021内，进而在第二电极层20采用激光剥离进行图案化过程中，可直接采用遮光层30作为掩膜板，以去除透光子区1021内未被第一遮光部31和第二遮光部32遮挡的第二电极层20，提高功能显示区102内的透光率；进一步地，本申请实施例中，像素定义层70在透光子区1021内形成凹凸结构11，进而可以减小第二电极层20在剥离过程中受到的垂直应力，以提高第二电极层20图案化的良品率。
可选的，各第二遮光部32可呈曲线排布，如图4所示，由于第二子电极22的形状与第二遮光部32的形状相同，则各第二子电极22也可呈曲线排布，进而可以降低第二子电极22对于光线的衍射，提高功能显示区102内的出光和透光效果。
可选的，第一遮光部31、第二遮光部32以及第三遮光部33的边缘皆呈锯齿状，如图5所示，则第一子电极21、第二子电极22以及第三子电极23的边缘皆可呈锯齿状，以进一步降低第二电极层20在功能显示区102内对于光线的衍射，以进一步提高功能显示区102内的出光和透光效果；可选的，第一遮光部31、第二遮光部32以及第三遮光部33的边缘还可呈波浪状。
进一步地，由于本申请实施例中在像素定义层70对应透光子区1021内的位置形成有凹凸结构11，可以降低第二电极层20在图案化过程中受到的垂直应力，进而可以降低第二电极层20边缘形成翘起的高度，如图7所示，第二电极层20（可包括第一子电极21、第二子电极22以及第三子电极23）的边缘形成有凸部202，且凸部202设置于第二电极层20远离有机隔垫层10的一侧，相对于相关技术中，对阴极或其他金属膜层进行图案化处理时，直接采用激光剥离在金属膜层边缘形成的尖锐凸起，本申请实施例中第二电极层20图案化过程中形成的凸部202呈圆弧形，且高度较小，进而可以提高后续封装制程的良品率。
在本申请的另一种实施例中，请参照图8，本实施例与上一实施例的区别之处在于，有机隔垫层10为有机衬底层40中的有机柔性子层。
在本实施例中，有机隔垫层10为第二有机柔性子层42，且遮光层30设置于第一有机柔性子层41与水氧阻挡子层43上，且凹凸结构11形成于第二有机柔性子层42远离第一有机柔性子层41的表面，并位于透光子区1021内。进一步地，凹凸结构11沿第一方向到第二电极层20的距离小于或等于遮光层30沿第一方向到第二电极层20的距离，其中，第一方向为显示面板的厚度方向，以使得遮光层30可以作为第二电极层20图案化过程中的掩膜板。
此外，显示面板还包括设置于透光子区1021内的多个凹槽501，在本实施例中，各凹槽501穿过第二电极层20、像素定义层70以及薄膜晶体管层50，以露出第二有机柔性子层42的上表面，即凹凸结构11设置于凹槽501的底部。
在本实施例中，第二电极层20在有机隔垫层10上的正投影与多个凹槽501在有机隔垫层10上的正投影相错开。
承上，本实施例中在透光子区1021中进行挖槽，进而相对于上一实施例中，进一步提高了透光子区1021内的透光率；同理，本实施例中，有机隔垫层10在透光子区1021内形成凹凸结构11，进而可以减小第二电极层20在剥离过程中受到的垂直应力，以提高第二电极层20图案化的良品率。
需要说明的是，有机隔垫层10还可以为第二电极层20与有机衬底层40中的任一有机膜层，且可在该有机膜层与第二电极层20之间开设挖槽，以使得第二电极层20在制程中可以覆盖于有机隔垫层10上。
在本申请实施例中，透光子区1021占功能显示区102的占比为70%至90%，且可以提高功能显示区102的透光率为30%至60%。
另外，本申请实施例还提供一种上述实施例中所述显示面板的制作方法，请参照图1、图2、图3、图9以及图10，该显示面板包括常规显示区101以及与常规显示区101邻接的功能显示区102。
该显示面板的制作方法包括：
S10、形成驱动电路层，驱动电路层上形成有位于功能显示区102内的凹凸结构11。
S20、在驱动电路层的一侧形成发光层63，发光层63包括：形成于功能显示区102的第一发光像素631和形成于常规显示区101的第二发光像素632。
S30、在发光层63远离驱动电路层的一侧形成第二电极层20，第二电极层20在功能显示区102中形成有位于相邻第一发光像素631之间并对应凹凸结构11的透光开口201。
具体地，在本申请的一种实施例中，请继续参照图1、图2、图3、图9以及图10。
提供有机衬底层40，有机衬底层40包括层叠的第一有机柔性子层41、第一水氧阻挡子层43、第二有机柔性子层42以及第二水氧阻挡子层44；其中，有机衬底层40中形成有位于第二有机柔性子层42与第二水氧阻挡子层44之间的遮光层30。
其中，遮光层30包括第一遮光部31、第二遮光部32、第三遮光部33以及第四遮光部34，其中，第一遮光部31与第二遮光部32位于透光子区1021内，第三遮光部33围绕透光子区1021设置，而第四遮光部34位于常规显示区101内。
可选的，遮光层30的材料包括Al、Pt、Pd、Ag、Mo、Li、W等金属材料，遮光层30的厚度为500Å至5000Å。
在有机衬底层40上形成薄膜晶体管层50，薄膜晶体管层50包括设置于有机衬底层40上的薄膜晶体管器件51以及包覆薄膜晶体管器件51的绝缘层；进一步地，绝缘层包括依次设置于有机衬底层40上的钝化层53、第一栅极绝缘层54、第二栅极绝缘层55以及层间绝缘层56；薄膜晶体管器件51包括设置于有机衬底层40上并被钝化层53覆盖的有源层、设置于钝化层53上并被第一栅极绝缘层54覆盖的第一栅极、设置于第一栅极绝缘层54上并被第二栅极绝缘层55覆盖的第二栅极以及设置于第二栅极绝缘层55上并被层间绝缘层56覆盖的源漏极。
需要说明的是，在本申请实施例中，薄膜晶体管器件51包括对应功能显示区102的第一晶体管以及对应常规显示区101的第二晶体管，其中，遮光层30还包括设置于常规显示区101内的第四遮光部34，且每一第二晶体管对应设置有一第四遮光部34，第四遮光部34设置于第二晶体管下方，可以起到遮光的作用，以防止环境光照射至薄膜晶体管器件51上，且薄膜晶体管层50还包括连接于第三遮光部33的导通部52，其中，导通部52可将薄膜晶体管层50中任一层中的电压信号加载到第四遮光部34中，以改善静电现象对薄膜晶体管器件51的损伤。
在薄膜晶体管层50上形成多个第一电极层61，且多个第一电极层61可位于透光子区1021内和常规显示区101内。
在薄膜晶体管层50与多个第一电极层61上形成有机隔垫层10（即像素定义层70），且在像素定义层70中形成位于透光子区1021内和常规显示区101的多个像素开口701，以及形成位于透光子区1021内的凹凸结构11，且每个像素开口701对应露出一第一电极层61的上表面，凹凸结构11与各像素开口701错开设置。
需要说明的是，凹凸结构11可在制程中采用半透掩膜板进行制备。
在像素定义层70上形成图案化的金属牺牲层12，以形成位于透光子区1021内且位于凹凸结构11上的金属牺牲层12，且金属牺牲层12保形地设置于凹凸结构11上，即金属牺牲层12贴合凹凸结构11设置，同样形成有凹凸的膜层形貌。
可选的，金属牺牲层12的材料包括Al、Pt、Pd、Ag、Mo、Li、W等金属材料，且金属牺牲层12的厚度可为100Å至2000Å。
在金属牺牲层12以及像素定义层70上形成公共层62以及发光层63，且公共层62包括第一公共层621以及第二公共层622，然后在第二公共层622上形成金属电极层，承上，公共层62以及金属电极层皆保形地设置于金属牺牲层12上，进而在公共层62以及金属电极层上也形成凹凸的膜层形貌。
在有机衬底层40远离薄膜晶体管层50的一侧，采用激光照射功能显示区102，具体可为透光子区1021，且遮光层30作为掩膜板，激光由未被遮光层30覆盖的区域照射至金属牺牲层12上，以使得金属牺牲层12以及位于金属牺牲层12上的公共层62和金属电极层被剥离，得到位于功能显示区102内图案化的第二电极层20，其中包括位于透光子区1021内的多个第一子电极21以及连接于任意相邻两个第一子电极21之间的第二子电极22。
可以理解的是，激光的能量不能多低，否则会导致金属电极层剥离不彻底，有残留，且激光的能量也不能过高，否则会损伤第二电极层20以及第二电极层20以下的其他膜层，同时，过高的能量带来的热效应会使得膜层边缘发生大面积卷曲，甚至撕裂起大部分膜层，从而影响到未被照射区域的第二电极层20，进而造成后续封装失效和显示异常。
其中，在透光子区1021内，有机隔垫层10、金属牺牲层12、公共层62以及第二电极层20的层叠结构如图10所示，由于被剥离的金属牺牲层12、公共层62以及第二电极层20位于凹凸结构11上，且金属牺牲层12、公共层62以及第二电极层20在凹凸结构11上同样形成有凹凸的膜层形貌，进而可以减少金属牺牲层12、公共层62以及第二电极层20被剥离时受到的垂直应力，以提高第二电极层20图案化过程中的良品率。
在本申请的另一种实施例中，请参照图1、图3、图8、图9以及图10，其与上一实施例的区别之处在于，有机隔垫层10为有机衬底层40中的第二有机柔性子层42，即凹凸结构11可采用半透掩膜板制备于第二有机柔性子层42上。
在形成像素定义层70之后，可在透光子区1021内开设穿过像素定义层70、薄膜晶体管层50以及第二水氧阻挡子层44的凹槽501，以露出第二有机柔性子层42的上表面，即露出凹凸结构11。
且后续可按照上述实施例中，在像素定义层70上形成公共层62、发光层63以及金属电极层，然后采用激光照射功能显示区102，以将透光子区1021内的金属牺牲层12以及位于金属牺牲层12上的公共层62和金属电极层剥离，得到位于功能显示区102内图案化的第二电极层20，其中包括位于透光子区1021内的多个第一子电极21以及连接于任意相邻两个第一子电极21之间的第二子电极22。
其中，在透光子区1021内，有机隔垫层10、金属牺牲层12、公共层62以及第二电极层20的层叠结构如图10所示，由于被剥离的金属牺牲层12、公共层62以及第二电极层20位于凹凸结构11上，且金属牺牲层12、公共层62以及第二电极层20在凹凸结构11上同样形成有凹凸的膜层形貌，进而可以减少第二电极层20被剥离时受到的垂直应力，以提高第二电极层20图案化过程中的良品率。
另外，本申请实施例还提供一种显示装置，该显示装置包括上述实施例中所述的显示面板和感光元件，且感光元件与显示面板的功能显示区102对应设置；可选的，该感光元件可包括摄像头组件、指纹识别组件、红外组件等，且本申请实施例提供的显示面板可以有效提高功能显示区102的透光率，进而可以有效提高感光元件的感光效果。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板及显示装置进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。
Claims (20)
- 一种显示面板，所述显示面板包括常规显示区以及与所述常规显示区邻接的功能显示区，所述显示面板还包括：驱动电路层；第一电极层，设置在所述驱动电路层中；发光层，设置在所述驱动电路层的一侧，所述发光层包括：设置在所述功能显示区的第一发光像素和设置在所述常规显示区的第二发光像素；第二电极层，设置在所述发光层远离所述驱动电路层的一侧，所述第二电极层在所述功能显示区中设置有位于相邻所述第一发光像素之间的透光开口；其中，所述驱动电路层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
- 根据权利要求1所述的显示面板，其中，所述驱动电路层包括：有机隔垫层，对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求2所述的显示面板，其中，所述驱动电路层包括：有机衬底层；薄膜晶体管层，设置在所述有机衬底层的一侧；像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，所述像素定义层包括多个对应所述第一发光像素或所述第二发光像素的像素开口；其中，所述像素定义层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求2所述的显示面板，其中，所述驱动电路层包括：有机衬底层；薄膜晶体管层，设置在所述有机衬底层的一侧；像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，其中，所述驱动电路层对应所述透光开口位置设置有凹槽，所述凹槽的底面延伸至所述有机衬底层，所述有机衬底层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求1所述的显示面板，其中，在相同单位面积内，所述第一发光像素的数量与所述第二发光像素的数量相同。
- 根据权利要求1所述的显示面板，其中，所述功能显示区包括透光子区以及位于所述透光子区与所述常规显示区之间的过渡子区；所述驱动电路层还包括遮光层，所述遮光层包括设置于所述功能显示区内的多个第一遮光部、多个第二遮光部以及围绕多个所述第一遮光部和多个所述第二遮光部设置的第三遮光部，所述第二遮光部连接于相邻的两所述第一遮光部之间，或连接于所述第一遮光部与所述第三遮光部之间，其中，一所述第一遮光部对应一所述第一发光像素设置，且所述第三遮光部与所述过渡子区至少部分重叠设置。
- 根据权利要求6所述的显示面板，其中，所述第二电极层在所述功能显示区中，对应相邻所述第一遮光部和所述第二遮光部围绕的区域，和/或，对应相邻的所述第一遮光部、所述第二遮光部、所述第三遮光部围绕的区域，设置有所述透光开口，所述透光开口与所述遮光层不重叠。
- 根据权利要求7所述的显示面板，其中，所述第二电极层包括与所述第一遮光部对应设置的第一子电极以及与所述第二遮光部对应设置的第二子电极，且相邻的所述第一子电极与所述第二子电极围绕所述透光开口设置；其中，所述第一子电极的形状与所述第一遮光部的形状相同，所述第二子电极的形状与所述第二遮光部的形状相同。
- 根据权利要求7所述的显示面板，其中，所述第一遮光部、所述第二遮光部以及所述第三遮光部的边缘为波浪状或锯齿状。
- 根据权利要求7所述的显示面板，其中，所述第二遮光部的形状为弯曲状。
- 根据权利要求6所述的显示面板，其中，所述驱动电路层还包括对应所述功能显示区设置的第一晶体管以及对应所述常规显示区设置的第二晶体管；所述遮光层还包括位于所述常规显示区内并与所述第二晶体管对应设置的第四遮光部，相同单位面积中所述第一遮光部的数量与所述第四遮光部的数量相同。
- 根据权利要求11所述的显示面板，其中，所述驱动电路层还包括与所述第一晶体管电连接并为所述第一晶体管提供驱动信号的第一走线、连接于所述第一晶体管与所述第一发光像素之间的第二走线；其中，在所述透光子区，所述第二遮光部与所述第一走线和/或所述第二走线重叠设置。
- 根据权利要求12所述的显示面板，其中，所述第一晶体管设置于所述过渡子区，在所述透光子区内，所述第二遮光部与所述第二走线重叠设置，且所述第二遮光部的宽度大于所述第二走线的宽度。
- 根据权利要求13所述的显示面板，其中，所述第一走线在所述过渡子区绕所述透光子区边缘设置，所述第三遮光部与绕所述透光子区边缘设置的所述第一走线至少部分重叠设置。
- 根据权利要求12所述的显示面板，其中，所述第一晶体管设置在所述透光子区，所述第一遮光部与所述第一晶体管重叠设置，所述第二遮光部与所述第一走线重叠设置，且所述第二遮光部的宽度大于所述第一走线的宽度。
- 一种显示装置，所述显示装置包括显示面板和感光元件，所述显示面板包括常规显示区以及与所述常规显示区邻接的功能显示区，所述感光元件与所述显示面板的所述功能显示区对应设置；所述显示面板还包括：驱动电路层；第一电极层，设置在所述驱动电路层中；发光层，设置在所述驱动电路层的一侧，所述发光层包括：设置在所述功能显示区的第一发光像素和设置在所述常规显示区的第二发光像素；第二电极层，设置在所述发光层远离所述驱动电路层的一侧，所述第二电极层在所述功能显示区中设置有位于相邻所述第一发光像素之间的透光开口；其中，所述驱动电路层对应所述透光开口位置，朝向所述第二电极层的一侧设置有凹凸结构。
- 根据权利要求16所述的显示装置，其中，所述驱动电路层包括：有机隔垫层，对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求17所述的显示装置，其中，所述驱动电路层包括：有机衬底层；薄膜晶体管层，设置在所述有机衬底层的一侧；像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，所述像素定义层包括多个对应所述第一发光像素或所述第二发光像素的像素开口；其中，所述像素定义层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求17所述的显示装置，其中，所述驱动电路层包括：有机衬底层；薄膜晶体管层，设置在所述有机衬底层的一侧；像素定义层，设置在所述薄膜晶体管层远离所述有机衬底层的一侧，其中，所述驱动电路层对应所述透光开口位置设置有凹槽，所述凹槽的底面延伸至所述有机衬底层，所述有机衬底层对应所述透光开口位置，朝向所述第二电极层的一侧设置有所述凹凸结构。
- 根据权利要求16所述的显示装置，其中，在相同单位面积内，所述第一发光像素的数量与所述第二发光像素的数量相同。
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