WO2023106241A1 - 銅系線材および半導体デバイス - Google Patents

銅系線材および半導体デバイス Download PDF

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Publication number
WO2023106241A1
WO2023106241A1 PCT/JP2022/044602 JP2022044602W WO2023106241A1 WO 2023106241 A1 WO2023106241 A1 WO 2023106241A1 JP 2022044602 W JP2022044602 W JP 2022044602W WO 2023106241 A1 WO2023106241 A1 WO 2023106241A1
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Prior art keywords
copper
wire
less
bonding
based wire
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PCT/JP2022/044602
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English (en)
French (fr)
Japanese (ja)
Inventor
茂樹 関谷
勝政 長谷川
秀一 北河
邦照 三原
秀雄 金子
司 高澤
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Furukawa Electric Co Ltd
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Furukawa Electric Co Ltd
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Priority to KR1020237012521A priority Critical patent/KR20240121658A/ko
Priority to CN202280006972.4A priority patent/CN116568835A/zh
Priority to DE112022005812.9T priority patent/DE112022005812T5/de
Priority to JP2023511909A priority patent/JP7717794B2/ja
Publication of WO2023106241A1 publication Critical patent/WO2023106241A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01565—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]

Definitions

  • the present disclosure relates to copper-based wires and semiconductor devices.
  • a bonding wire is a wire-shaped member that electrically connects a semiconductor chip and an electrode.
  • bonding wires are bonded to semiconductor chips using ultrasonic bonding.
  • Patent Document 1 describes a solar cell lead wire that can suppress uneven deformation during winding onto and unwinding from a bobbin. Low. However, Patent Document 1 does not mention the Young's modulus of the solar cell lead wire, and it is unclear whether the solar cell lead wire can withstand the impact when ultrasonically bonded to the semiconductor chip by wedge bonding.
  • Patent Document 2 describes a palladium-coated copper bonding wire that suppresses shrinkage cavities that are formed during ball bonding and that can accommodate narrower pitches between bonding wires.
  • Patent Document 2 there is no mention of the Young's modulus and 0.2% yield strength of the palladium-coated copper bonding wire. Not sure.
  • a sufficient current cannot be passed because the final wire diameter of the palladium-coated copper bonding wire is too thin to meet the demand for high output and high current.
  • An object of the present disclosure is to provide a soft copper-based wire that is small in load even when pressed against a semiconductor chip and has excellent impact durability, and a semiconductor device that includes the copper-based wire as a bonding wire.
  • the ratio (L T /L B ) of the length L T of the twin grain boundary to the length L B of the grain boundary where the misorientation of adjacent crystals is 15 degrees or more is 0.0.
  • [5] The copper-based wire according to any one of [1] to [4] above, wherein the copper-based wire is made of oxygen-free copper.
  • the copper-based wire according to any one of [1] to [5] above, wherein the copper-based wire has a palladium coating layer covering the outer peripheral surface.
  • the present disclosure it is possible to provide a soft copper-based wire that is small in load even when pressed against a semiconductor chip and has excellent impact durability, and a semiconductor device that includes the copper-based wire as a bonding wire.
  • FIG. 1 is a perspective view showing an example of a half tower device of an embodiment.
  • FIG. 2 is a schematic diagram showing an example of a cross section perpendicular to the longitudinal direction of the bonding wire before wedge bonding.
  • FIG. 3 is a schematic diagram showing an example of a cross section perpendicular to the longitudinal direction of the bonding wire during wedge bonding.
  • the present inventors have focused on simultaneously controlling the crystal grain size and crystal orientation of a copper-based wire, and found that the crystal grain size and crystal orientation in the cross section of the copper-based wire are different from those of the copper-based wire. It was found to affect Young's modulus and 0.2% yield strength. As a result, a soft copper-based wire that is small in load even when pressed against a semiconductor chip and has excellent impact durability is achieved. I have found that it can be suppressed. The present disclosure has been completed based on such findings.
  • a copper-based wire according to an embodiment is made of copper or a copper alloy, and has an average crystal grain size of 20 ⁇ m or more and 150 ⁇ m or less in a cross section perpendicular to the longitudinal direction of the copper-based wire, and has a crystal orientation of ⁇ 111>.
  • the accumulation rate is 40% or less
  • the Young's modulus is 80 GPa or more and 120 GPa or less
  • the 0.2% yield strength is 20 MPa or more and 90 MPa or less.
  • a copper-based wire is composed of copper (copper wire) or copper alloy (copper alloy wire).
  • the copper-based wire may be a copper alloy containing a small amount of elements such as silver (Ag), chromium (Cr), and tin (Sn).
  • copper is preferred in view of the trend toward larger currents.
  • tough pitch copper which is pure copper composed of 99.90% by mass or more of copper (Cu) and inevitable impurities, and 99.96% by mass or more. of Cu, 10 ppm or less of oxygen and unavoidable impurities.
  • the copper alloy constituting the copper-based wire includes 0.1% by mass to 1.0% by mass of Ag, 0.1% by mass to 1.0% by mass of Cr, and 0.1% by mass to 1.0% by mass. It is preferable to have an alloy composition containing at least one element of Sn in mass % or less, with the balance being Cu and unavoidable impurities.
  • the tensile durability of the copper-based wire can be improved. Therefore, when the copper-based wire is used as a bonding wire and bonded to the electrode of the semiconductor chip, it can withstand a tensile load when the copper-based wire is drawn out, and the bonding speed can be improved. On the other hand, when Ag, Cr, and Sn exceed the above upper limit values, it can be a factor of lowering the electrical conductivity of the copper-based wire. Therefore, in order to use the copper-based wire as a bonding wire for power semiconductors, it is preferable to add the above elements at a low concentration.
  • the upper limit of the Ag content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • the upper limit of the Cr content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • the copper alloy contains Sn the upper limit of the Sn content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • Unavoidable impurities mean impurities at a content level that are unavoidably mixed in during the manufacturing process. Since the content of unavoidable impurities may cause the conductivity of the copper-based wire to decrease, the content of unavoidable impurities is preferably small.
  • the inevitable impurities include, for example, aluminum (Al), beryllium (Be), cadmium (Cd), iron (Fe), magnesium (Mg), nickel (Ni), phosphorus (P). , lead (Pd), silicon (Si), and titanium (Ti).
  • the inevitable impurities include, in addition to the above elements, elements intentionally contained in the copper alloy and alloyed with copper, such as Ag, Cr, and Sn. .
  • the upper limit of the content of inevitable impurities is preferably 20 ppm or less in total of the above elements.
  • the average crystal grain size is 20 ⁇ m or more and 150 ⁇ m or less
  • the crystal orientation ⁇ 111> integration rate is 40% or less.
  • the accumulation rate of the ⁇ 111> crystal orientation is the ratio of the crystal orientations in the range ⁇ 15° shifted from the ⁇ 111> crystal orientation to the total crystal orientation.
  • the average crystal grain size of the copper-based wire is 20 ⁇ m or more in the cross section perpendicular to the longitudinal direction of the copper-based wire, an increase in the 0.2% proof stress of the copper-based wire can be suppressed. Further, when the average crystal grain size is 150 ⁇ m or less, disconnection of the copper-based wire due to non-uniform deformation that occurs when the copper-based wire is pulled can be suppressed. From the above viewpoint, the lower limit of the average crystal grain size in the cross section of the copper-based wire is 20 ⁇ m or more, preferably 30 ⁇ m or more, more preferably 40 ⁇ m or more, and the upper limit is 150 ⁇ m or less.
  • the integration rate of the ⁇ 111> crystal orientation in the cross section of the copper-based wire is 40% or less, preferably 30% or less, more preferably 20% or less.
  • crystal grain size and crystal orientation are generally known material factors.
  • the heat treatment temperature is set high for the purpose of increasing the crystal grain size
  • the crystal orientation also changes depending on the heat treatment temperature, making it impossible to simultaneously control the crystal grain size and the crystal orientation.
  • the Young's modulus and 0.2% proof stress can be controlled within the above ranges, so the copper-based wire is soft and pressed against the semiconductor chip. It has a small load and excellent impact resistance.
  • the lower limit is 80 GPa or more
  • the upper limit is 120 GPa or less, preferably 110 GPa or less, and more preferably 100 GPa or less.
  • the 0.2% yield strength of the copper-based wire has a lower limit of 20 MPa or more and an upper limit of 90 MPa or less, preferably 60 MPa or less, and more preferably 40 MPa or less.
  • material deformation includes elastic deformation and plastic deformation.
  • a copper-based wire is required to have a low Young's modulus and a low yield strength from the viewpoints of being soft, having a small load when pressed against a semiconductor chip, and being excellent in impact durability.
  • the Young's modulus and 0.2% proof stress of the copper-based wire are within the above range, it is soft, the load is small even when pressed against a semiconductor chip, and the impact resistance is excellent. Therefore, when manufacturing a semiconductor device using a copper-based wire as a bonding wire, the load on the semiconductor chip is reduced when the copper-based wire is bonded to the semiconductor chip, so damage to the semiconductor chip can be suppressed.
  • the lower the Young's modulus and the 0.2% yield strength within the above ranges the easier the copper-based wire is to be deformed when bonded to a semiconductor chip, and the better the impact durability.
  • the copper-based wire when the Young's modulus and 0.2% yield strength are equal to or higher than the above lower limits, when the copper-based wire is fed out from the bobbin to be set in an ultrasonic bonding machine for bonding with the semiconductor chip, the copper-based wire Can suppress tensile breakage.
  • n value C ⁇ ⁇ n ( ⁇ : true stress, C: strength constant, ⁇ : true strain).
  • the n value is generally a contradictory characteristic to the 0.2% yield strength, and the lower the 0.2% yield strength, the higher the n value, and the higher the 0.2% yield strength, the lower the n value.
  • the n value of the copper-based wire is preferably 0.45 or less, more preferably 0.35 or less.
  • the n value is a value that changes during plastic deformation, and considering the ease of deformation as a bonding wire, it is considered that the n value should be defined by the value at the initial stage of deformation. % to 5% range. For samples in which a nominal strain of 5% or more could not be obtained, the n value was calculated in the range from the nominal strain when calculating the 0.2% proof stress by the offset method to the nominal strain at which the maximum tensile strength was obtained.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is preferably 15% or more, more preferably 20% or more, and still more preferably 25%. % or more.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is 15% or more, that is, the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> are copper-based at a rate of 15% or more If it is oriented in the longitudinal direction of the wire, the Young's modulus tends to be low, and a soft copper-based wire tends to be obtained.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is preferably 40% or less.
  • the copper-based wire can be more durable against a tensile load when unwinding from the bobbin.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is ⁇ 15° shifted from the crystal orientation ⁇ 100> with respect to all crystal orientations. It is the ratio of the total crystal orientation of the crystal orientations in the range of +15° and the crystal orientations in the range ⁇ 15° from the crystal orientation ⁇ 110>.
  • twin grain boundaries are low-energy grain boundaries with high atomic coherence, dislocations are less likely to accumulate during working than at large-angle grain boundaries, and the force applied during bending can be reduced.
  • the shape of the copper-based wire can be appropriately selected according to the amount of current required for the semiconductor device, the wiring space, etc., and is preferably a round wire or a ribbon wire.
  • a round wire is a copper-based wire having a circular cross section.
  • Ribbon wires include rectangular wires, striated wires, and track-shaped wires.
  • a rectangular wire has a shape in which a cross section of a copper-based wire is surrounded by four straight lines.
  • the striated wire is a copper-based wire having a rectangular cross-sectional shape.
  • the track-shaped wire is a shape in which the cross section of the copper-based wire is surrounded by two straight lines and two curved lines connecting the ends of the two straight lines, that is, a so-called track shape.
  • the copper-based wire is a round wire
  • the wire diameter of the copper-based wire (round wire) is 0.1 mm or more, a relatively high current can flow through the copper-based wire, so the copper-based wire is used as a power semiconductor.
  • Suitable for bonding wires for Further, when the wire diameter of the copper-based wire (round wire) is 0.5 mm or less, it is possible to adequately secure wiring space for the trend toward miniaturization of semiconductor devices, and it is easy to bend.
  • the copper-based wire is a ribbon wire
  • the thickness of the copper-based wire is 0.1 mm or more
  • a relatively high current can flow through the copper-based wire.
  • the thickness of the copper-based wire (ribbon wire) is 0.5 mm or less, it is possible to adequately secure wiring space for the trend toward miniaturization of semiconductor devices, and it is easy to bend.
  • the copper-based wire may have a metal coating layer covering the outer peripheral surface.
  • a preferred metal coating layer is a palladium coating layer.
  • the palladium covering layer covering the outer peripheral surface of the copper-based wire is formed by plating, for example.
  • Such a copper-based wire is suitable for bonding wires for semiconductor devices because it is soft, has a small load even when pressed against a semiconductor chip, has excellent impact durability, and is soft.
  • a casting process is performed.
  • electrolytic copper is melted in a reducing atmosphere to obtain a cylindrical ingot called a billet.
  • the extrusion process or rolling process is performed.
  • the billet is processed into a round bar by hot extrusion.
  • the rolling process is performed continuously with the casting process using a continuous casting and rolling mill.
  • molten copper is poured into a ring-shaped rotating mold to form an ingot, and rolling is repeated in the vertical or horizontal direction to obtain a wire rod.
  • the first wire drawing process is performed.
  • the round bar or wire rod obtained in the above step is drawn to a predetermined wire diameter.
  • the first wire drawing step includes a peeling step for removing surface defects that have occurred up to the above steps.
  • the first heat treatment process is performed.
  • the second heat treatment step which is a subsequent step, the average crystal grain size in the cross section of the copper-based wire and the accumulation rate of the predetermined crystal orientation are simultaneously controlled within a predetermined range. heat treatment.
  • the heat treatment temperature is 400°C or higher and 900°C or lower. If the heat treatment temperature is less than 400° C., the crystal grains are difficult to grow, and the second heat treatment step simultaneously reduces the average crystal grain size in the cross section of the copper-based wire to 20 ⁇ m or more and the crystal orientation ⁇ 111> accumulation rate of 40% or less. difficult to achieve.
  • the heat treatment is performed at 200 to 300° C., but as shown in Comparative Examples A2 and A3 described later, either the average crystal grain size or the crystal orientation ⁇ 111> accumulation rate is used. or both do not meet the above given ranges of this disclosure.
  • the heat treatment temperature exceeds 900° C.
  • the average crystal grain size in the cross section of the copper-based wire exceeds 150 ⁇ m due to the second heat treatment step, and the copper-based wire cannot withstand the tension when it is drawn out from the bobbin. , cause disconnection.
  • the heat treatment time is 10 minutes or more and 6 hours or less. If the heat treatment time is less than 10 minutes, the crystal grains will not be uniform because the time is insufficient for uniformly heat treating the entire sample when a large number of samples are heated in a batch furnace. Therefore, it is not possible to stably achieve an average crystal grain size of 20 ⁇ m or more in the cross section of the copper-based wire by the second heat treatment step. On the other hand, if the heat treatment time exceeds 6 hours, the second heat treatment step will increase the average crystal grain size in the cross section of the copper-based wire to 20 ⁇ m or more, but the industrial cost will be too high.
  • the heat treatment time is shortened to 6 seconds or more and 15 seconds or less compared to the batch heat treatment, so the heat treatment temperature is 700 ° C. or more. Set to 950°C or less.
  • the reason for setting the upper limit and lower limit of the heat treatment temperature in the heat treatment while running is the same as in the batch heat treatment.
  • the second wire drawing process is performed.
  • wire drawing is performed at a processing rate of 10% or more and 70% or less. If the processing rate is less than 10%, the driving force for recrystallization during the second heat treatment step is insufficient, and the second heat treatment step reduces the accumulation rate of the predetermined crystal orientation in the cross section of the copper-based wire within the desired range. cannot be controlled. On the other hand, if the working rate is more than 70%, a large amount of working strain is introduced, and strain is introduced into the entire sample. The accumulation rate cannot be controlled within the desired range, and furthermore, it is difficult to achieve an average crystal grain size of 20 ⁇ m or more in the cross section of the copper-based wire.
  • the processing rate is 15% or more and 50% or less.
  • the processing rate is expressed by dividing the value obtained by subtracting the sample cross-sectional area after wire drawing from the sample cross-sectional area before wire drawing by the sample cross-sectional area before wire drawing and multiplying by 100.
  • the second heat treatment process is performed.
  • the heat treatment temperature is 500° C. or more and 900° C. or less
  • the heat treatment time is 6 seconds or more and 15 seconds or less.
  • the copper-based wire has a metal coating layer
  • the copper-based wire is immersed in an alkaline bath, and electricity is applied so that the copper-based wire becomes a cathode, thereby removing organic stains present on the surface of the copper-based wire.
  • the washed copper-based wire is immersed in a sulfuric acid bath to remove the oxide film on the surface of the copper-based wire.
  • the washed copper-based wire is immersed in a palladium-containing solution and electroplated with a predetermined current and time to form a palladium coating layer, which is a metal coating layer, on the surface of the copper-based wire.
  • the electroplating current and time are appropriately set according to the thickness of the metal coating layer.
  • FIG. 1 is a perspective view showing an example of a half tower device of an embodiment.
  • the semiconductor device of the embodiment includes a semiconductor chip and bonding wires bonded to the semiconductor chip, the bonding wires being made of copper or a copper alloy and provided on top of the semiconductor chip.
  • the average crystal grain size is 10 ⁇ m or more and 100 ⁇ m or less, and the crystal orientation ⁇ 111> integration rate. is 40% or less.
  • Electrode 2a is, for example, an aluminum electrode or a copper electrode.
  • the bonding wire 4 is made of copper (copper wire) or copper alloy (copper alloy wire).
  • the bonding wire may be, for example, a copper alloy containing a small amount of elements such as Ag, Cr, and Sn. In addition, it is preferably copper. Among them, the higher the copper content, the higher the conductivity, so it is preferable to use tough pitch copper, which is pure copper containing 99.90% by mass or more of Cu and unavoidable impurities, and 99.96% by mass or more of Cu, Oxygen-free copper containing 10 ppm or less of oxygen and unavoidable impurities is more preferable.
  • the copper alloy constituting the bonding wire 0.1% by mass or more and 1.0% by mass or less of Ag, 0.1% by mass or more and 1.0% by mass or less of Cr, 0.1% by mass or more and 1.0% by mass or less It is preferable to have an alloy composition containing at least one element of Sn in mass % or less, with the balance being Cu and unavoidable impurities.
  • the tensile durability of the bonding wire 4 can be improved when Ag, Cr, and Sn are at least the above lower limits. Therefore, it is possible to withstand a tensile load when the bonding wires 4 are drawn out when bonding the bonding wires 4 to the electrodes 2a of the semiconductor chip 2, and the bonding speed can be improved.
  • Ag, Cr, and Sn exceed the above upper limits, it can be a factor of lowering the electrical conductivity of the bonding wire 4 . Therefore, it is preferable to add the above elements at a low concentration for bonding wires for power semiconductors.
  • the upper limit of the Ag content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • the upper limit of the Cr content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • the copper alloy contains Sn the upper limit of the Sn content is more preferably 0.7% by mass or less, and still more preferably 0.4% by mass or less.
  • the remainder other than the elements mentioned above is unavoidable impurities. It is preferable that the content of the inevitable impurities is small because the conductivity of the bonding wire 4 may be lowered depending on the content of the inevitable impurities.
  • the inevitable impurities include, for example, aluminum (Al), beryllium (Be), cadmium (Cd), iron (Fe), magnesium (Mg), nickel (Ni), and phosphorus (P). , lead (Pd), silicon (Si), and titanium (Ti).
  • the inevitable impurities include, in addition to the above elements, elements intentionally contained in the copper alloy and alloyed with copper, such as Ag, Cr, and Sn. .
  • the upper limit of the content of inevitable impurities is preferably 20 ppm or less in total of the above elements.
  • the average crystal grain size is 10 ⁇ m or more and 100 ⁇ m or less
  • the integration rate of the crystal orientation ⁇ 111> is 40% or less.
  • the integration rate of the ⁇ 111> crystal orientation is the ratio of the crystal orientations in the range ⁇ 15° shifted from the ⁇ 111> crystal orientation to the total crystal orientation.
  • the bonding portion 6 is a portion of the bonding wire 4 that is bonded to the electrode 2 a on the semiconductor chip 2 .
  • the bonding between the semiconductor chip 2 and the bonding wire 4 will cause Damage to the semiconductor chip 2 is suppressed, and a good semiconductor device 1 can be obtained.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is preferably 15% or more and 40% or less.
  • the total integration rate of the crystal orientation ⁇ 100> and the crystal orientation ⁇ 110> is ⁇ 15° from the crystal orientation ⁇ 100> with respect to all crystal orientations. It is the ratio of the total crystal orientation of the crystal orientations in the deviated range and the crystal orientations in the range ⁇ 15° deviated from the crystal orientation ⁇ 110>.
  • the bonding wires 4 are soft, have excellent impact resistance, and are easy to bend during routing. As a result, space can be saved.
  • the ratio of the length LT of the twin grain boundary to the length LB of the grain boundary where the misorientation of adjacent crystals is 15 degrees or more is preferably 0.7 or more and 1.0 or less.
  • the bonding wire 4 is soft, has excellent impact durability, and is easy to bend during routing. As a result, space can be saved.
  • the bonding wire 4 is a round wire
  • the wire diameter of the bonding wire 4 is 0.1 mm or more.
  • a relatively high current can flow through the bonding wire 4 when the thickness is 0.1 mm or more. Therefore, the bonding wire 4 is suitable as a bonding wire for power semiconductors.
  • the wire diameter of the bonding wire 4 (round wire) is 0.5 mm or less and the thickness of the bonding wire 4 (ribbon wire) is 0.5 mm or less, the wiring space is reduced in response to the trend toward miniaturization of semiconductor devices. In addition, the bonding wire 4 can be easily bent.
  • the bonding wire 4 may have a metal film layer (not shown) covering the outer peripheral surface.
  • a preferred metal coating layer is a palladium coating layer.
  • the palladium covering layer covering the outer peripheral surface of the bonding wire 4 is formed by plating, for example.
  • the bonding wire 4 is preferably the copper-based wire material of the above embodiment.
  • FIG. 2 is a schematic diagram showing an example of a cross section perpendicular to the longitudinal direction of the bonding wire before wedge bonding
  • FIG. 3 is a schematic diagram showing an example of a cross section perpendicular to the longitudinal direction of the bonding wire during wedge bonding. It is a diagram.
  • the bonding wires 4 are joined to the electrodes 2a on the semiconductor chip 2.
  • the bonding wire 4 is pressed against the electrode 2a on the semiconductor chip 2 with a wedge-shaped tool 7, and ultrasonic waves are applied at a frequency of 60 kHz or more and 120 kHz or less for a time of 0.1 seconds or more and 0.8 seconds or less.
  • the bonding wires 4 are joined to the electrodes 2 a of the semiconductor chip 2 .
  • a semiconductor device comprising the semiconductor chip 2 and the bonding wires 4 bonded to the semiconductor chip 2 can be obtained.
  • the average crystal grain size and the crystal orientation ⁇ 111> integration rate in the cross section of the copper-based wire are controlled.
  • the Young's modulus and the 0.2% yield strength which have conventionally been in a trade-off relationship, can be lowered at the same time. Therefore, the copper-based wire is soft, and even if it is pressed against a semiconductor chip, the load is small and it is excellent in impact resistance.
  • the copper-based wire deforms appropriately when it is bonded to a semiconductor chip mounted on a semiconductor device, reducing the load on the semiconductor chip. Therefore, damage to the semiconductor chip due to bonding between the semiconductor chip and the bonding wire can be suppressed.
  • Examples A1 to A4, A7 to A14 and Comparative Examples A1 to A3 A copper-based material composed of the components shown in Table 1 was subjected to a casting process, an extrusion process, and a first wire drawing process to obtain a wire having a wire diameter of 0.56 mm. Subsequently, a first heat treatment step was performed under the conditions shown in Table 2. Subsequently, a second wire drawing process was performed to obtain wires having the shape, wire diameter, thickness, width, and working ratio shown in Table 2. In the second wire drawing step, a round hole die, a rectangular die, or a cassette roller die (CRD) that draws wire through a gap arranged between two rolls was used to finish a round wire or ribbon wire. Subsequently, a second heat treatment step was performed under the conditions shown in Table 2. Thus, a copper-based wire was obtained.
  • a first heat treatment step was performed under the conditions shown in Table 2.
  • a second wire drawing process was performed to obtain wires having the shape, wire diameter, thickness,
  • Examples A5-A6 A copper-based material composed of the components shown in Table 1 was subjected to a casting process, a rolling process, and a first wire drawing process to obtain a strip having a thickness of 0.56 mm. Subsequently, a first heat treatment step was performed under the conditions shown in Table 2. Subsequently, a second wire drawing process was performed to obtain wires having the shape, thickness, width, and working ratio shown in Table 2. In the second wire drawing step, the wire was rolled to a thickness shown in Table 2, slitted, cut into a desired width, and finished into a ribbon wire. Subsequently, a second heat treatment step was performed under the conditions shown in Table 2. Thus, a copper-based wire was obtained.
  • Example A15 A plating step was performed on the copper-based wire obtained in Example A1.
  • a copper-based wire is immersed in an alkaline bath containing caustic soda, sodium carbonate, and sodium silicate, and a current of 5 A/dm 2 is applied for 5 seconds so that the copper-based wire becomes the cathode. Organic stains present on the surface of the wire were removed. Subsequently, the washed copper-based wire was immersed in a 10% concentration sulfuric acid bath for 5 seconds to remove the oxide film on the surface of the copper-based wire.
  • the washed copper-based wire was immersed in a palladium-containing solution, electroplating was performed at a current of 4 to 20 A/dm 2 , and the current value and time were adjusted so that the thickness of the palladium coating layer was 1 ⁇ m. Then, a palladium coating layer was formed on the surface of the copper-based wire. The thickness of the palladium coating layer was obtained by observing a cross section perpendicular to the longitudinal direction of the copper-based wire with an optical microscope.
  • the palladium-containing solution consisted of 8 g/L of palladium metal (98 g/L of dichlorotetraamminepalladium, which is a palladium metal complex), 400 g/L of ammonium nitrate and 160 g/L of ammonium chloride, and was diluted with aqueous ammonia to a pH of 8 to 9. The pH was adjusted so that The temperature of the palladium-containing solution was 60°C.
  • Examples B1 to B15 and Comparative Examples B1 to B3 As shown in Table 4, using the copper-based wires obtained in the above Examples and Comparative Examples as bonding wires, copper-based electrodes (aluminum electrode pads) provided on a semiconductor chip having a length of 10 mm and a width of 10 mm. The wires were pressed against each other and ultrasonic bonding was applied to join the copper-based wires to the semiconductor chip. The ultrasonic waves were applied at a frequency of 60 kHz and a time of 0.3 seconds. Thus, a semiconductor device was obtained by wedge bonding.
  • copper-based electrodes aluminum electrode pads
  • the object to be measured is the cross-section cut perpendicular to the longitudinal direction of a copper-based wire rod, which is mirror-finished by polishing, or the joint 6 between the semiconductor chip and the bonding wire as shown in FIG.
  • a cross section cut along the cutting line P perpendicular to the longitudinal direction of the wire is mirror-finished by polishing (in FIG. 1, of the two cross sections, the surface of the bonding wire on the front right side of the paper surface) and
  • the measurement area was the entire range of the cross section.
  • the measurement was performed with an EBSD step size of 1 ⁇ m. In the EBSD measurement, n3 (three measurement targets) was measured and the average value was calculated.
  • the average crystal grain size was calculated by the area method by selecting the chart-grain size (diameter) of the analysis software for the measurement range.
  • an orientation parallel to the longitudinal direction of the copper-based wire or bonding wire is selected on the IPFmap, and the crystal orientation ⁇ 111> and the crystal orientation ⁇ 100> with respect to that orientation on the chart-crystal direction.
  • the ratio of the area of grains oriented ⁇ 15° from the crystal orientation ⁇ 110> to the area of grains of all orientations respectively, the integration rate of crystal orientation ⁇ 111>, the integration rate of crystal orientation ⁇ 100>, and the crystal orientation ⁇ 110> as the accumulation rate.
  • [3] 0.2% Yield Strength According to JIS Z2241, a tensile test was performed using a precision universal testing machine (manufactured by Shimadzu Corporation), and the 0.2% yield strength (MPa) was determined by the offset method. In addition, the tensile test was performed for each of three samples (n3), and the average value was obtained. A 0.2% yield strength of 20 MPa or more and 90 MPa or less was considered acceptable.
  • Young's modulus Young's modulus was measured using a Young's modulus measuring device JE-RT (manufactured by Technoplus Japan) using a resonance method. The sample was cut into an arbitrary length of 40 mm or more and 60 mm or less so that the amplitude at the resonance frequency during measurement was large, and the weight of the sample was measured to calculate the density. n3 was measured and the average value was calculated. A Young's modulus of 80 GPa or more and 120 GPa or less was considered acceptable.
  • the average crystal grain size and crystal orientation ⁇ 111> accumulation ratio in the cross section of the copper-based wire, the Young's modulus of the copper-based wire, and the 0.2% proof stress was controlled within a predetermined range, the copper-based wire material was soft, had a small load even when pressed against a semiconductor chip, and was excellent in impact resistance.
  • the average crystal grain size and crystal The integration rate of the ⁇ 111> orientation is within a predetermined range, and the copper-based wire deforms appropriately when bonded to the semiconductor chip, so the load on the semiconductor chip is reduced. No breakage of the semiconductor chip occurred.
  • Comparative Example A1 the accumulation rate of the crystal orientation ⁇ 111> in the cross section of the copper-based wire and the Young's modulus of the copper-based wire were not controlled within a predetermined range. Furthermore, in Comparative Example B1 in which the copper-based material obtained in Comparative Example A1 was used as the bonding wire, the integration rate of the crystal orientation ⁇ 111> was not within the predetermined range in the cross section of the bonding wire at the joint. Therefore, in Comparative Example B1, the semiconductor chip was damaged due to bonding between the semiconductor chip and the bonding wire.
  • Comparative Example A2 the average crystal grain size and crystal orientation ⁇ 111> accumulation rate in the cross section of the copper-based wire, as well as the Young's modulus and 0.2% yield strength of the copper-based wire, were not controlled within a predetermined range. rice field. Furthermore, in Comparative Example B2 using the copper-based material obtained in Comparative Example A2 as a bonding wire, the average crystal grain size and the crystal orientation ⁇ 111> integration rate in the cross section of the bonding wire at the bonding portion were within a predetermined range. it wasn't Therefore, in Comparative Example B2, the semiconductor chip was damaged due to the bonding between the semiconductor chip and the bonding wire.
  • Comparative Example A3 the average crystal grain size in the cross section of the copper-based wire and the 0.2% yield strength were not controlled within the predetermined ranges. Furthermore, in Comparative Example B3 in which the copper-based material obtained in Comparative Example A3 was used as the bonding wire, the average crystal grain size was not within the predetermined range in the cross section of the bonding wire at the joint. Therefore, in Comparative Example B3, the semiconductor chip was damaged due to the bonding between the semiconductor chip and the bonding wire.

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PCT/JP2022/044602 2021-12-07 2022-12-02 銅系線材および半導体デバイス Ceased WO2023106241A1 (ja)

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