WO2023102726A1 - Solution tampon de gravure pour film d'oxyde non métallique - Google Patents

Solution tampon de gravure pour film d'oxyde non métallique Download PDF

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Publication number
WO2023102726A1
WO2023102726A1 PCT/CN2021/136060 CN2021136060W WO2023102726A1 WO 2023102726 A1 WO2023102726 A1 WO 2023102726A1 CN 2021136060 W CN2021136060 W CN 2021136060W WO 2023102726 A1 WO2023102726 A1 WO 2023102726A1
Authority
WO
WIPO (PCT)
Prior art keywords
etching solution
metal oxide
etchant
etching
oxide film
Prior art date
Application number
PCT/CN2021/136060
Other languages
English (en)
Chinese (zh)
Inventor
高小云
刘兵
Original Assignee
晶瑞电子材料股份有限公司
晶瑞湖北微电子材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 晶瑞电子材料股份有限公司, 晶瑞湖北微电子材料有限公司 filed Critical 晶瑞电子材料股份有限公司
Priority to PCT/CN2021/136060 priority Critical patent/WO2023102726A1/fr
Priority to CN202180007457.3A priority patent/CN114929836B/zh
Publication of WO2023102726A1 publication Critical patent/WO2023102726A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the invention relates to the technical field of etchant, in particular to a buffered etchant for non-metal oxide films.
  • the silicon dioxide layer can be used as the gate oxide layer in the MOS device, the protective layer of the device, the isolation of the electrical performance, the insulating material and the dielectric film of the capacitor, etc.
  • the existing chemical solution generally uses a buffer combination of hydrofluoric acid and ammonium fluoride, but in actual use, it often causes over-etching of polysilicon and glass substrates, and cannot effectively penetrate into the micropores of the silica layer. Silicon dioxide has poor selective etching ability, resulting in unclean etching.
  • the purpose of the present invention is to overcome the deficiencies in the prior art, provide a kind of improved non-metal oxide film buffer etchant, this etchant has stronger selective etching ability for silicon dioxide, fast etching speed, and simultaneously for polysilicon and Glass substrates basically do not undergo over-etching.
  • the technical solution of the present invention is: a kind of buffer etching solution for non-metal oxide film, this etching solution comprises hydrofluoric acid, ammonium fluoride, penetrating agent and water, and compound modifier, described
  • the composite modifier is composed of the compound shown in formula (I) and the compound shown in formula (II) with a feed molar ratio of 2-8:1;
  • n is an integer selected from 2-10;
  • n is an integer selected from 1-6.
  • the compound represented by the formula (I) is a combination of one or more selected from perfluorotriethylamine, perfluorotripropylamine and perfluorotributylamine.
  • the compound represented by formula (II) is isobutanolamine.
  • the composite modifier is composed of perfluorotriethylamine and isobutanolamine with a feed molar ratio of 3-5:1.
  • the composite modifier accounts for 0.001%-0.1% of the etching solution in terms of mass percentage. Further, in terms of mass percentage, the composite modifier accounts for 0.005%-0.08% of the etching solution.
  • the water is high-purity water with a resistance less than or equal to 18 M ⁇ cm.
  • the purity of the hydrofluoric acid and the ammonium fluoride are both UP grade and above among electronic grade chemicals.
  • the ammonium fluoride accounts for 1%-40% of the etching solution in terms of mass percentage.
  • etching solution 0.5%-5% of hydrofluoric acid, 5%-25% of ammonium fluoride, 0.001%-1% of penetrant, perfluorotrifluorotri Ethylamine 0.004-0.06%, isobutanolamine 0.001%-0.02%, and the balance is water.
  • the penetrant includes penetrant JFC series, low foam penetrant series, fast penetrant series or penetrant OE-35.
  • the present invention has the following advantages compared with the prior art:
  • the present invention innovatively provides a buffer etching solution for non-metal oxide films.
  • the etching solution has strong selective etching ability for silicon dioxide, fast etching speed, and basically no over-etching for polysilicon and glass substrates. Phenomenon.
  • the penetrant JFC was purchased from Haian Petrochemical, the purity grade of hydrofluoric acid was UP grade, the purity grade of ammonium fluoride was UP grade, and the resistance of pure water was 18M ⁇ cm.
  • a buffer etching solution for a non-metal oxide film in this embodiment in terms of mass percentage, in the etching solution: 1% hydrofluoric acid, 8% ammonium fluoride, 0.005% penetrant JFC, perfluorotrifluorotrioxide Ethylamine 0.004%, isobutanolamine 0.001%, and the balance is water.
  • the preparation method of the buffer etching solution for the non-metal oxide film comprises the following steps: mixing, dispersing and filtering each component according to the formula amount, and the filtrate is the buffer etching solution for the non-metal oxide film.
  • a buffer etching solution for a non-metal oxide film in this embodiment in terms of mass percentage, in the etching solution: 2% hydrofluoric acid, 10% ammonium fluoride, 0.002% penetrant JFC, perfluorotrifluorotrioxide Ethylamine 0.01%, isobutanolamine 0.003%, and the balance is water.
  • the preparation method is the same as in Example 1.
  • a buffer etching solution for non-metal oxide films in this embodiment in terms of mass percentage, in the etching solution: 5% hydrofluoric acid, 15% ammonium fluoride, 0.005% penetrant JFC, perfluorotrifluorotrioxide Ethylamine 0.04%, isobutanolamine 0.01%, and the balance is water.
  • the preparation method is the same as in Example 1.
  • a buffer etching solution for a non-metal oxide film in this embodiment in terms of mass percentage, in the etching solution: 3% hydrofluoric acid, 10% ammonium fluoride, 0.005% penetrant JFC, perfluorotrifluorotrioxide Ethylamine 0.05%, isobutanolamine 0.01%, and the balance is water.
  • the preparation method is the same as in Example 1.
  • Example 2 Basically the same as Example 1, the only difference is: no perfluorotriethylamine and isobutanolamine are added, and the amount of water added is adjusted accordingly.
  • Example 2 Basically the same as in Example 1, the only difference is that perfluorotriethylamine is not added, and the addition amount of isobutanolamine is adjusted to 0.005% accordingly.
  • Example 2 Basically the same as Example 1, the only difference is that no isobutanolamine is added, and the addition amount of perfluorotriethylamine is adjusted to 0.005% accordingly.
  • the etchant prepared in Examples 1-4 and Comparative Examples 1-3 were respectively subjected to etching experiments on polysilicon substrates, glass substrates and silicon dioxide layers.
  • the etching temperature was 25°C and the etching time was 2 minutes.
  • the experimental results are shown in the table 1:
  • Shedding of polysilicon substrate no shedding: @; slight shedding: #; obvious shedding: &; residual amount of silicon dioxide layer: ⁇ : no residue; ⁇ : trace residue; ⁇ : obvious residue.
  • the etching solution of the present invention has highly selective etching on the silicon oxide film layer in the manufacturing process, the etching rate is efficient and controllable, and no steps appear after etching; the etching solution does not etch the contact layer ILD film and GI film layer,
  • the etch rate efficiency of polysilicon substrate and glass substrate is less than that to the greatest extent to avoid over-etching of polysilicon and glass substrates, and at the same time, it can quickly wet the micropores with the chemical solution and completely etch the silicon dioxide layer.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

La présente invention concerne une solution tampon de gravure pour un film d'oxyde non métallique. La solution tampon de gravure comprend de l'acide fluorhydrique, du fluorure d'ammonium, un agent pénétrant, de l'eau et un modificateur composite, le modificateur composite étant composé d'un composé tel que représenté dans la formule (I) et d'un composé tel que représenté dans la formule (II) en un rapport de charge molaire de (2-8)/1 : N(CnF2n+1)3 (I), n étant un nombre entier sélectionné parmi 2-10 ; et NH2-C(CmH2m+1)2-CH2OH (II), n étant un nombre entier sélectionné parmi 1 à 6. La solution de gravure de la présente invention présente une capacité relativement forte en termes de gravure sélective de dioxyde de silicium et de vitesse de gravure élevée, et est également sensiblement empêchée de surgraver des substrats de verre et de silicium polycristallin.
PCT/CN2021/136060 2021-12-07 2021-12-07 Solution tampon de gravure pour film d'oxyde non métallique WO2023102726A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2021/136060 WO2023102726A1 (fr) 2021-12-07 2021-12-07 Solution tampon de gravure pour film d'oxyde non métallique
CN202180007457.3A CN114929836B (zh) 2021-12-07 2021-12-07 一种非金属氧化物膜用缓冲蚀刻液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2021/136060 WO2023102726A1 (fr) 2021-12-07 2021-12-07 Solution tampon de gravure pour film d'oxyde non métallique

Publications (1)

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WO2023102726A1 true WO2023102726A1 (fr) 2023-06-15

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Country Status (2)

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WO (1) WO2023102726A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
CN103756681A (zh) * 2013-12-31 2014-04-30 浙江凯圣氟化学有限公司 一种boe蚀刻液组合物
CN103890234A (zh) * 2011-11-17 2014-06-25 易安爱富科技有限公司 钼合金膜及铟氧化膜的蚀刻液组合物
CN103992043A (zh) * 2014-05-15 2014-08-20 奇瑞汽车股份有限公司 一种疏水剂的制备方法
CN109689215A (zh) * 2016-09-12 2019-04-26 普里米欧姆遗传学（英国）有限公司 用于微流控芯片的疏水性涂层的方法和系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6716569B2 (en) * 2000-07-07 2004-04-06 Fuji Photo Film Co., Ltd. Preparation method for lithographic printing plate
KR100546386B1 (ko) * 2003-10-10 2006-01-26 삼성전자주식회사 보이드를 방지할 수 있는 반도체 디바이스의 ｓｔｉ막형성방법
CN103756680A (zh) * 2013-12-31 2014-04-30 浙江凯圣氟化学有限公司 一种boe蚀刻液的制备方法
KR20170108079A (ko) * 2015-02-26 2017-09-26 후지필름 가부시키가이샤 상층막 형성용 조성물과, 그것을 이용한 패턴 형성 방법 및 전자 디바이스의 제조 방법
CN108384548A (zh) * 2018-02-24 2018-08-10 苏州晶瑞化学股份有限公司 一种非金属氧化物膜用缓冲蚀刻液
CN111471463B (zh) * 2020-04-24 2021-10-19 湖北兴福电子材料有限公司 一种二氧化硅薄膜的蚀刻液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
CN103890234A (zh) * 2011-11-17 2014-06-25 易安爱富科技有限公司 钼合金膜及铟氧化膜的蚀刻液组合物
CN103756681A (zh) * 2013-12-31 2014-04-30 浙江凯圣氟化学有限公司 一种boe蚀刻液组合物
CN103992043A (zh) * 2014-05-15 2014-08-20 奇瑞汽车股份有限公司 一种疏水剂的制备方法
CN109689215A (zh) * 2016-09-12 2019-04-26 普里米欧姆遗传学（英国）有限公司 用于微流控芯片的疏水性涂层的方法和系统

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
XIANG ZHENNIE, CHUAN -JI, JING HOU: "A Chemical Polish-etching of Optics Suface Based on the Marangoni Interface Effect", JOURNAL OF OPTOELECTRONICS.LASER. 2007(10) PAGE:1158-1161, vol. 18, no. 10, 1 October 2007 (2007-10-01), pages 1158 - 1161, XP093070701, DOI: 10.16136/j.joel.2007.10.021 *

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CN114929836A (zh) 2022-08-19
CN114929836B (zh) 2023-06-27

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