WO2023100659A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2023100659A1
WO2023100659A1 PCT/JP2022/042573 JP2022042573W WO2023100659A1 WO 2023100659 A1 WO2023100659 A1 WO 2023100659A1 JP 2022042573 W JP2022042573 W JP 2022042573W WO 2023100659 A1 WO2023100659 A1 WO 2023100659A1
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WO
WIPO (PCT)
Prior art keywords
lead
semiconductor device
thickness direction
resin
resin surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/042573
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
僚太郎 柿▲崎▼
泰正 糟谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to DE112022005176.0T priority Critical patent/DE112022005176T5/de
Priority to JP2023564862A priority patent/JPWO2023100659A1/ja
Priority to CN202280077729.1A priority patent/CN118382925A/zh
Publication of WO2023100659A1 publication Critical patent/WO2023100659A1/ja
Priority to US18/630,588 priority patent/US20240258219A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the present disclosure relates to semiconductor devices.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • This semiconductor device includes first to third leads, a semiconductor device, and a sealing resin.
  • the first lead includes a first pad having a pad main surface and a pad back surface.
  • a semiconductor element is mounted on the main surface of the pad.
  • the sealing resin is in contact with the main surface of the pad and covers the semiconductor element.
  • the first, second and third leads have first, second and third terminals extending in the same direction, respectively.
  • the semiconductor device is mounted on the circuit board by inserting the first terminal, the second terminal, and the third terminal through the through holes of the circuit board or the like.
  • an insulating sheet is provided between the rear surface of the pad and the heat sink.
  • the semiconductor device is required to be surface-mounted on the circuit board, for example, in addition to the mounting form in which the terminal portion is inserted through the circuit board.
  • An object of the present disclosure is to provide a semiconductor device that is improved over conventional semiconductor devices.
  • one object of the present disclosure is to provide a surface-mountable semiconductor device.
  • a semiconductor device provided by one aspect of the present disclosure includes a semiconductor element, first leads, second leads, and sealing resin.
  • the first lead includes a die pad portion having a first lead main surface on which the semiconductor element is mounted facing one thickness direction side and a first lead back surface facing the thickness direction other side, and a first terminal portion. ,including.
  • the second lead is spaced apart from the first lead.
  • the sealing resin has a first resin surface facing one side in the thickness direction and a second resin surface facing the other side in the thickness direction, and covers the semiconductor element and part of the die pad section. .
  • the rear surface of the first lead is exposed from the second resin surface.
  • the second lead includes a second pad portion electrically connected to the semiconductor element, and a second terminal portion connected to the second pad portion.
  • the second terminal portion includes a fourth portion connected to the second pad portion, and a fifth portion positioned on one side in the thickness direction with respect to the fourth portion and used for mounting.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure
  • FIG. FIG. 2 is a perspective view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 3 is a perspective view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 4 is a main part perspective view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. 5 is a main part perspective view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a plan view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. 7 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure;
  • FIG. FIG. 8 is a front view showing the semiconductor device according to the first embodiment of the present disclosure;
  • FIG. 9 is a side view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 10 is a fragmentary plan view showing the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 11 is a bottom view of essential parts showing the semiconductor device according to the first embodiment of the present disclosure.
  • 12 is a cross-sectional view taken along line XII-XII in FIG. 11.
  • FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 11.
  • FIG. 14 is a cross-sectional view taken along line XIV-XIV in FIG. 11.
  • FIG. FIG. 15 is a cross-sectional view showing how the semiconductor device according to the first embodiment of the present disclosure is used.
  • FIG. 16 is a cross-sectional view showing a first modification of the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 17 is a cross-sectional view showing a usage state of the first modification of the semiconductor device according to the first embodiment of the present disclosure.
  • 18 is a perspective view showing a second modification of the semiconductor device according to the first embodiment of the present disclosure;
  • FIG. 19 is a cross-sectional view showing a second modification of the semiconductor device according to the first embodiment of the present disclosure;
  • FIG. FIG. 20 is a perspective view showing a third modification of the semiconductor device according to the first embodiment of the present disclosure;
  • FIG. 21 is a cross-sectional view showing a third modification of the semiconductor device according to the first embodiment of the present disclosure
  • 22 is a perspective view showing a fourth modification of the semiconductor device according to the first embodiment of the present disclosure
  • FIG. FIG. 23 is a cross-sectional view showing a fourth modification of the semiconductor device according to the first embodiment of the present disclosure
  • FIG. 24 is a cross-sectional view showing a fifth modification of the semiconductor device according to the first embodiment of the present disclosure
  • FIG. 25 is a side view showing a sixth modification of the semiconductor device according to the first embodiment of the present disclosure
  • FIG. 26 is a fragmentary plan view showing a semiconductor device according to a second embodiment of the present disclosure
  • FIG. 27 is a fragmentary plan view showing a semiconductor device according to a third embodiment of the present disclosure
  • FIG. 28 is a cross-sectional view showing a semiconductor device according to a fourth embodiment of the present disclosure
  • FIG. 29 is a cross-sectional view showing a semiconductor device according to a fifth embodiment of the present disclosure
  • FIG. 30 is a perspective view showing a semiconductor device according to a sixth embodiment of the present disclosure
  • FIG. 31 is a fragmentary plan view showing a semiconductor device according to a sixth embodiment of the present disclosure
  • FIG. FIG. 32 is a perspective view showing a modification of the semiconductor device according to the sixth embodiment of the present disclosure
  • FIG. 33 is a cross-sectional view showing a semiconductor device according to a seventh embodiment of the present disclosure
  • FIG. 34 is a cross-sectional view showing a modification of the semiconductor device according to the seventh embodiment of the present disclosure;
  • a certain entity A is formed on a certain entity B” and “a certain entity A is formed on a certain entity B” mean “a certain entity A is formed on a certain entity B”. It includes "being directly formed in entity B” and “being formed in entity B while another entity is interposed between entity A and entity B”.
  • ⁇ an entity A is placed on an entity B'' and ⁇ an entity A is located on an entity B'' mean ⁇ an entity A is located on an entity B.'' It includes "directly placed on B” and "some entity A is placed on an entity B while another entity is interposed between an entity A and an entity B.”
  • ⁇ an object A is located on an object B'' means ⁇ an object A is adjacent to an object B and an object A is positioned on an object B. and "the thing A is positioned on the thing B while another thing is interposed between the thing A and the thing B".
  • ⁇ an object A overlaps an object B when viewed in a certain direction'' means ⁇ an object A overlaps all of an object B'' and ⁇ an object A overlaps an object B.'' It includes "overlapping a part of a certain thing B".
  • First embodiment: 1 to 15 show a semiconductor device according to a first embodiment of the present disclosure.
  • a semiconductor device A10 of this embodiment includes a conduction member 10, a semiconductor element 20, and a sealing resin 40.
  • the z-direction is an example of the "thickness direction”
  • the x-direction is an example of the "first direction”
  • the y-direction is an example of the "second direction.”
  • the conductive member 10 is a member that constitutes a conductive path to the semiconductor element 20 .
  • the conducting member 10 of this embodiment includes a first lead 11, a second lead 12, and a third lead 13. As shown in FIG.
  • the material of first lead 11, second lead 12 and third lead 13 is not limited at all, and includes copper (Cu) or a copper alloy, for example.
  • appropriate portions of the first lead 11, the second lead 12, and the third lead 13 may be plated with silver (Ag), nickel (Ni), bell (Sn), or the like.
  • first lead 11 has die pad portion 111 and first terminal portion 112 .
  • the die pad portion 111 has a first lead main surface 1111 and a first lead rear surface 1112 .
  • the first lead main surface 1111 is a surface facing one side in the z direction.
  • the first lead back surface 1112 is a surface facing the other side in the z direction.
  • a semiconductor element 20 is mounted on the first lead main surface 1111 .
  • the die pad portion 111 of this embodiment further has a first lead side surface 1113 and a first intermediate surface 1114 .
  • the first lead side surface 1113 is located between the first lead main surface 1111 and the first lead back surface 1112 in the z direction, and faces one side in the x direction.
  • the first intermediate surface 1114 is positioned between the first lead main surface 1111 and the first lead back surface 1112 in the z direction, and faces the other side in the z direction (the same side as the first lead back surface 1112). be.
  • the shape of the die pad portion 111 is not limited at all. In the illustrated example, the die pad portion 111 has a rectangular shape when viewed in the z direction. Also, the shapes of the first lead main surface 1111 and the first lead back surface 1112 are not limited at all, and in the illustrated example, they are rectangular when viewed in the z direction.
  • the first terminal portion 112 has a first portion 1121 , two second portions 1122 and two third portions 1123 .
  • the first portion 1121 is connected to the die pad portion 111, extends from the die pad portion 111 to one side in the x direction, and is parallel to the xy plane in the illustrated example. In this embodiment, the die pad portion 111 is larger in size in the z direction than the first portion 1121 .
  • the first terminal portion 112 of this embodiment has only one first portion 1121 .
  • the shape of the first part 1121 is not limited at all, and in the illustrated example, it is rectangular when viewed in the z direction.
  • the first portion 1121 is separated from the first lead back surface 1112 in the z-direction, and is in contact with the first lead main surface 1111 in the illustrated example.
  • the surface of the first portion 1121 on one side in the z direction is flush with the first lead main surface 1111 .
  • the two second parts 1122 are located on one side of the first part 1121 in the z direction.
  • the two second parts 1122 are used when the semiconductor device A10 is surface-mounted on a circuit board or the like.
  • the two third parts 1123 are interposed between the first part 1121 and the two second parts 1122 .
  • the third portion 1123 extends from the first portion 1121 to one side in the z direction.
  • the third portion 1123 is inclined with respect to the z-direction so as to extend outward from the first portion 1121 in the y-direction.
  • the shape of the third part 1123 is not limited at all, and in the illustrated example it is rectangular when viewed in the y direction.
  • the two second parts 1122 extend outward in the y direction from the two third parts 1123 . Also, the two second parts 1122 are parallel to the y direction. The two second portions 1122 do not protrude from the two third portions 1123 to one side in the x direction. In the illustrated example, the two second parts 1122 and the two third parts 1123 have the same position in the x-direction.
  • Second lead 12 The second lead 12 is arranged apart from the first lead 11 .
  • the second lead 12 is located on one side of the die pad portion 111 in the z direction, and is located on the other side of the first terminal portion 112 of the first lead 11 in the x direction.
  • the second lead 12 has a second pad portion 121 and a plurality of second terminal portions 122 .
  • the second pad portion 121 has a second lead main surface 1211 and a second lead rear surface 1212 .
  • the second lead main surface 1211 is a surface facing one side in the z direction.
  • the second lead back surface 1212 is a surface facing the other side in the z direction.
  • the back surface 1212 of the second lead is electrically connected to the first electrode 201 of the semiconductor element 20, which will be described later.
  • the second lead back surface 1212 and the first electrode 201 are joined, for example, through solder.
  • the second lead back surface 1212 and the first electrode 201 may be bonded via silver (Ag) paste, baked silver, or the like.
  • the shape of the second pad portion 121 is not limited at all. In the illustrated example, as shown in FIG.
  • the second pad portion 121 has a body portion 121a, a joint portion 121b and a connecting portion 121c.
  • the body portion 121a has a long rectangular shape with the y direction as the longitudinal direction, and a plurality of second terminal portions 122 are connected to the main body portion 121a.
  • the joint portion 121b has a rectangular shape and is conductively joined to the first electrode 201 of the semiconductor element 20 .
  • the connecting portion 121c has a rectangular shape and is connected to the main body portion 121a and the joint portion 121b. In the present embodiment, the joint portion 121b is positioned on the other side in the z direction from the main body portion 121a.
  • the second pad section 121 is smaller than the die pad section 111 when viewed in the z direction. Also, the second pad portion 121 is smaller in size in the z direction than the die pad portion 111 and is the same as the first terminal portion 112 .
  • the plurality of second terminal portions 122 are arranged side by side in the y direction.
  • the second terminal portion 122 has a fourth portion 1221 , a fifth portion 1222 and a sixth portion 1223 .
  • the fourth portion 1221 is connected to the second pad portion 121, extends from the second pad portion 121 to the other side in the x direction, and is parallel to the xy plane in the illustrated example.
  • the shape of the fourth part 1221 is not limited at all, and in the illustrated example it is rectangular when viewed in the z direction.
  • the fifth part 1222 is located on one side of the fourth part 1221 in the z direction.
  • the fifth part 1222 is used when the semiconductor device A10 is surface-mounted on a circuit board or the like.
  • the fifth portion 1222 has a shape extending along the x direction.
  • the sixth part 1223 is interposed between the fourth part 1221 and the fifth part 1222 .
  • the sixth portion 1223 extends from the fourth portion 1221 to one side in the z direction.
  • the sixth portion 1223 is tilted with respect to the z direction (yz plane).
  • the shape of the sixth portion 1223 is not limited at all, and in the illustrated example it is rectangular when viewed in the x direction.
  • the third lead 13 is arranged apart from the first lead 11 and the second lead 12 .
  • the third lead 13 is located on one side of the die pad portion 111 in the z direction and is located on the other side of the first terminal portion 112 of the first lead 11 in the x direction. Also, the third lead 13 is aligned with the second lead 12 in the y direction.
  • the third lead 13 has a third pad portion 131 and a third terminal portion 132 .
  • the third pad portion 131 has a third lead main surface 1311 and a third lead back surface 1312 .
  • the third lead main surface 1311 is a surface facing one side in the z direction.
  • the third lead back surface 1312 is a surface facing the other side in the z direction.
  • the back surface 1312 of the third lead is conductively joined to the third electrode 203 of the semiconductor element 20, which will be described later.
  • the third lead back surface 1312 and the third electrode 203 are joined, for example, via solder.
  • the back surface 1312 of the third lead and the third electrode 203 may be bonded via silver (Ag) paste, baked silver, or the like.
  • the shape of the third pad portion 131 is not limited at all. In the illustrated example, as shown in FIG.
  • the third pad portion 131 has a body portion 131a, a joint portion 131b and a connecting portion 131c.
  • the body portion 131a has a rectangular shape and is connected to the third terminal portion 132 .
  • the joint portion 131b has a rectangular shape and is conductively joined to the third electrode 203 of the semiconductor element 20 .
  • the connecting portion 131c has a long rectangular shape and is connected to the main body portion 131a and the joint portion 131b. In this embodiment, the connecting portion 131c extends obliquely in the x direction.
  • the joint portion 131b is positioned on the other side in the z direction from the main body portion 131a.
  • the third pad portion 131 is smaller than the second pad portion 121 when viewed in the z direction.
  • the third pad portion 131 is smaller in size in the z direction than the die pad portion 111 and is the same as the second pad portion 121 .
  • the third terminal portion 132 has a seventh portion 1321 , an eighth portion 1322 and a ninth portion 1323 .
  • the seventh portion 1321 is connected to the third pad portion 131, extends from the third pad portion 131 to the other side in the x direction, and is parallel to the xy plane in the illustrated example.
  • the shape of the seventh part 1321 is not limited at all, and in the illustrated example it is rectangular when viewed in the z direction.
  • the eighth part 1322 is located on one side of the seventh part 1321 in the z direction.
  • the eighth part 1322 is used when the semiconductor device A10 is surface-mounted on a circuit board or the like.
  • the eighth portion 1322 has a shape extending along the x direction.
  • the ninth part 1323 is interposed between the seventh part 1321 and the eighth part 1322 .
  • the ninth portion 1323 extends from the seventh portion 1321 to one side in the z direction.
  • the ninth portion 1323 is tilted with respect to the z direction (yz plane).
  • the shape of the ninth portion 1323 is not limited at all, and in the illustrated example it is rectangular when viewed in the x direction.
  • Semiconductor device 20 The semiconductor element 20 is mounted on the first lead main surface 1111 of the die pad portion 111, as shown in FIGS.
  • the semiconductor element 20 is an n-channel type vertical MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).
  • Semiconductor device 20 is not limited to a MOSFET.
  • the semiconductor element 20 may be another transistor such as an IGBT (Insulated Gate Bipolar Transistor).
  • the semiconductor element 20 may be a diode.
  • the semiconductor element 20 has a semiconductor layer 205 , a first electrode 201 , a second electrode 202 and a third electrode 203 .
  • the semiconductor layer 205 includes a compound semiconductor substrate.
  • the main material of compound semiconductor substrates is silicon carbide (SiC).
  • silicon (Si) may be used as the main material of the compound semiconductor substrate.
  • the first electrode 201 is provided on the side (one side) facing the first lead main surface 1111 of the die pad portion 111 of the first lead 11 in the z direction.
  • the first electrode 201 corresponds to the source electrode of the semiconductor element 20 .
  • the second electrode 202 is provided on the side opposite to the first electrode 201 in the z direction.
  • the second electrode 202 faces the first lead main surface 1111 of the die pad portion 111 of the first lead 11 .
  • the second electrode 202 corresponds to the drain electrode of the semiconductor element 20 .
  • the second electrode 202 is electrically connected to the first lead main surface 1111 via the bonding layer 29 .
  • the bonding layer 29 is, for example, solder, silver (Ag) paste, baked silver, or the like.
  • the third electrode 203 is provided on the same side as the first electrode 201 in the z-direction and is positioned away from the first electrode 201 .
  • the third electrode 203 corresponds to the gate electrode of the semiconductor element 20 . Viewed in the z-direction, the area of the third electrode 203 is smaller than the area of the first electrode 201 .
  • the first terminal portion 112 of the first lead 11 is the drain terminal
  • the second terminal portion 122 of the second lead 12 is the source terminal
  • the third terminal portion 132 of the third lead 13 is the drain terminal. is the gate terminal.
  • Sealing resin 40 covers the semiconductor element 20 and part of the first leads 11, the second leads 12 and the third leads 13, as shown in FIGS.
  • the sealing resin 40 has electrical insulation.
  • Sealing resin 40 is made of a material containing, for example, black epoxy resin.
  • the sealing resin 40 has a first resin surface 41 , a second resin surface 42 , a third resin surface 43 , a fourth resin surface 44 , a fifth resin surface 45 and a sixth resin surface 46 .
  • the first resin surface 41 faces the same side (one side) as the first lead main surface 1111 of the die pad portion 111 of the first lead 11 in the z direction.
  • the second resin surface 42 faces the opposite side (the other side) of the first resin surface 41 in the z direction.
  • the first lead rear surface 1112 of the die pad portion 111 of the first lead 11 is exposed from the second resin surface 42 .
  • the second resin surface 42 and the first lead back surface 1112 are flush with each other.
  • the first lead back surface 1112 is separated from the third resin surface 43 in the x direction.
  • the third resin surface 43 faces one side in the x direction.
  • the first portion 1121 of the first terminal portion 112 of the first lead 11 passes through the third resin surface 43 .
  • only one first portion 1121 penetrates the third resin surface 43 .
  • the first portion 1121 is separated from the second resin surface 42 in the z direction.
  • the fourth resin surface 44 faces the opposite side (the other side) of the third resin surface 43 in the x direction.
  • the fourth portion 1221 of the plurality of second terminal portions 122 of the second lead 12 and the seventh portion 1321 of the third terminal portion 132 of the third lead 13 pass through the fourth resin surface 44. are doing. Also, the fourth portion 1221 and the seventh portion 1321 are separated from the second resin surface 42 in the z direction.
  • the fifth resin surface 45 and the sixth resin surface 46 are surfaces facing opposite to each other in the y direction.
  • the sealing resin 40 has grooves 49 .
  • the groove 49 is recessed from the second resin surface 42 in the z direction and extends along the y direction.
  • the groove 49 reaches the fifth resin surface 45 and the sixth resin surface 46 .
  • the sealing resin 40 has two recesses 47 .
  • One recessed portion 47 is recessed from the first resin surface 41 and the fifth resin surface 45 .
  • the other recess 47 is recessed from 41 and sixth resin surface 46 .
  • a portion of the first lead main surface 1111 is exposed from the recess 47 .
  • FIG. 15 shows the state of use of the semiconductor device A10.
  • the semiconductor device A10 is surface-mounted on the circuit board 92 . That is, the second portion 1122 of the first terminal portion 112, the fifth portion 1222 of the second terminal portion 122, and the eighth portion 1322 of the third terminal portion 132 are connected by solder 921, for example, to the wiring pattern (illustrated) of the circuit board 92. abbreviation).
  • a heat sink 91 is arranged opposite to the back surface 1112 of the first lead of the die pad section 111 .
  • a sheet material 919 is arranged between the first lead back surface 1112 and the heat sink 91 .
  • Sheet material 919 is, for example, an insulating sheet.
  • the first lead back surface 1112 is exposed from the second resin surface 42 .
  • a heat sink 91 can be arranged opposite to the back surface 1112 of the first lead.
  • the second portion 1122 is located on one side in the z direction relative to the first portion 1121 .
  • the semiconductor device A10 can be surface-mounted on the circuit board 92 or the like using the second portion 1122 .
  • the first lead back surface 1112 is separated from the third resin surface 43 in the x direction.
  • the first portion 1121 is separated from the second resin surface 42 in the z direction. Therefore, part of the sealing resin 40 exists between the back surface 1112 of the first lead and the first portion 1121 . Thereby, the first lead 11 can be held more firmly by the sealing resin 40 .
  • the back surface 1212 of the second lead is electrically connected to the first electrode 201 of the semiconductor element 20 .
  • the back surface 1312 of the third lead is conductively joined to the third electrode 203 of the semiconductor element 20 . Therefore, compared to the case where the second lead 12 (third lead 13) and the first electrode 201 (third electrode 203) are conductively connected via a bonding wire, a larger current can flow. .
  • the semiconductor device A10 has can reduce the number of parts.
  • the first terminal portion 112 has a third portion 1123 . Thereby, the second part 1122 can be supported more reliably.
  • the third part 1123 is parallel to the yz plane. Therefore, the x-direction dimension of the semiconductor device A10 can be reduced.
  • the first terminal portion 112 has two second portions 1122 . Thereby, the mounting strength of the semiconductor device A10 can be increased.
  • the two second parts 1122 extend outward in the x direction from the third part 1123 . Thereby, the mounting strength of the semiconductor device A10 can be further increased.
  • the size of the first portion 1121 in the y direction is smaller than the size of the die pad portion 111 in the y direction. Thereby, the holding force of the first lead 11 by the sealing resin 40 can be further enhanced.
  • the second part 1122 does not protrude from the third part 1123 in the x direction. Thereby, the x-direction dimension of the semiconductor device A10 can be reduced.
  • the die pad portion 111 is larger in size in the z direction than the first portion 1121 .
  • the heat can be transferred over a wider range in the x and y directions. Therefore, the heat from the semiconductor element 20 can be radiated to the heat sink 91 or the like by the wider area of the back surface 1112 of the first lead, and the heat radiation efficiency can be improved.
  • the surface of the first portion 1121 on one side in the z direction is flush with the first lead main surface 1111 . This makes it possible to increase the distance from the first portion 1121 to the second resin surface 42 in the z-direction, and to further increase the holding force of the sealing resin 40 for the first leads 11 .
  • a groove 49 is formed in the sealing resin 40 .
  • creepage distance the distance along the surface of the sealing resin 40 from the back surface 1112 of the first lead to the second lead 12 (fourth portion 1221) and the third lead 13 (seventh portion 1321) (hereinafter referred to as creepage distance) is can be extended.
  • First embodiment First modification 16 and 17 show a first modification of the semiconductor device A10.
  • the relationship between the second portion 1122, the fifth portion 1222 and the eighth portion 1322, and the first resin surface 41 is different from the example described above.
  • the second portion 1122, the fifth portion 1222, and the eighth portion 1322 are located on the other side in the z direction (the side to which the first lead back surface 1112 faces) from the first resin surface 41.
  • the surfaces of the second portion 1122, the fifth portion 1222, and the eighth portion 1322 facing one side in the z direction are separated from the first resin surface 41 by a distance Gz.
  • the semiconductor device A11 can be surface-mounted, and the same effect as the semiconductor device A10 can be obtained.
  • the first resin surface 41 protrudes from the second portion 1122, the fifth portion 1222, and the eighth portion 1322 toward one side in the z direction by a distance Gz. Therefore, in the state of use of the semiconductor device A11 shown in FIG. 17, when the heat sink 91 is pressed against the semiconductor device A11, the first resin surface 41 is likely to come into contact with the circuit board 92 . Thereby, the force applied from the heat sink 91 can be suppressed from acting on the first lead 11 , the second lead 12 and the third lead 13 and the semiconductor element 20 .
  • First Embodiment Second Modification 18 and 19 show a second modification of the semiconductor device A10.
  • the semiconductor device A12 of this modified example two grooves 49 are provided in the sealing resin 40 .
  • Each groove 49 extends in the y direction and reaches the fifth resin surface 45 and the sixth resin surface 46 . Also, the two grooves 49 are spaced apart in the x direction.
  • the semiconductor device A12 can be surface-mounted, and the same effect as the above-described example can be obtained. Also, by having two grooves 49, the creepage distance between the first lead back surface 1112 and the second terminal portion 122 and the third terminal portion 132 can be further extended. As understood from this modified example, the number of grooves 49 is not limited at all.
  • First Embodiment Third Modification 20 and 21 show a third modification of the semiconductor device A10.
  • a convex portion 48 is provided on the sealing resin 40 .
  • the convex portion 48 protrudes from the second resin surface 42 to the other side in the z direction.
  • the protrusion 48 extends along the y direction and reaches the fifth resin surface 45 and the sixth resin surface 46 .
  • the convex portion 48 is arranged at the other end of the sealing resin 40 in the x direction and is in contact with the fourth resin surface 44 .
  • the semiconductor device A13 can be surface-mounted. Moreover, by having the convex portion 48, the creeping distance between the first lead back surface 1112 and the second terminal portion 122 and the third terminal portion 132 can be extended.
  • First Embodiment Fourth Modification 22 and 23 show a fourth modification of the semiconductor device A10.
  • two protrusions 48 are provided in the sealing resin 40 .
  • Each projection 48 protrudes from the second resin surface 42 to the other side in the z direction.
  • Each convex portion 48 extends along the y direction and reaches the fifth resin surface 45 and the sixth resin surface 46 .
  • the two protrusions 48 are arranged apart from each other with the first lead back surface 1112 interposed therebetween in the x direction.
  • One protrusion 48 is in contact with the fourth resin surface 44 .
  • the other convex portion 48 is in contact with the third resin surface 43 .
  • the semiconductor device A14 can be surface-mounted. Moreover, by having the two protrusions 48, the creeping distance between the first lead back surface 1112 and the second terminal portion 122 and the third terminal portion 132 can be further extended. As understood from this modified example, the number of protrusions 48 is not limited at all.
  • FIG. 24 shows a fifth modification of the semiconductor device A10.
  • the sealing resin 40 does not have the convex portion 48 and the groove 49 described above. This modification also allows the semiconductor device A15 to be surface-mounted. Further, as understood from this modified example, the sealing resin 40 may be configured without the projections 48 and the grooves 49 .
  • FIG. 25 shows a sixth modification of the semiconductor device A10.
  • two second portions 1122 extend inward in the x direction from two third portions 1123 .
  • This modification also allows the semiconductor device A16 to be surface-mounted.
  • the shape of the second portion 1122 is not limited at all.
  • FIG. 26 shows a semiconductor device according to a second embodiment of the present disclosure.
  • the semiconductor device A20 of this embodiment differs from that of the first embodiment in that a fourth lead 14 is further provided.
  • the configuration and operation of other portions of this embodiment are the same as those of the first embodiment.
  • each part of said 1st Embodiment and each modification may be combined arbitrarily.
  • the fourth lead 14 is arranged between the second lead 12 and the third lead 13 in the y direction.
  • the fourth lead 14 is arranged apart from the first lead 11 , the second lead 12 and the third lead 13 .
  • the fourth lead 14 is located on one side of the die pad portion 111 in the z direction, and is located on the other side of the first terminal portion 112 of the first lead 11 in the x direction.
  • the fourth lead 14 has a fourth pad portion 141 and a fourth terminal portion 142 .
  • the fourth pad portion 141 has a fourth lead main surface 1411 and a fourth lead rear surface 1412 .
  • the fourth lead main surface 1411 is a surface facing one side in the z direction.
  • the fourth lead back surface 1412 is a surface facing the other side in the z direction.
  • the back surface 1412 of the fourth lead is electrically connected to the first electrode 201 of the semiconductor element 20 .
  • the shape of the fourth terminal portion 142 is not limited at all, it has the same shape as the third terminal portion 132 .
  • a fourth terminal portion 142 of the fourth lead 14 is a source sense terminal.
  • the semiconductor device A20 can be surface-mounted.
  • the fourth lead 14 may be arranged on the opposite side of the second lead 12 from the third lead 13 in the y direction.
  • FIG. 27 shows a semiconductor device according to a third embodiment of the present disclosure.
  • the semiconductor device A30 of this embodiment differs from that of the first embodiment in the mode of conduction between the third lead 13 and the semiconductor element 20.
  • the configuration and operation of other portions of this embodiment are the same as those of the first embodiment. It should be noted that each part of the above-described first and second embodiments and modifications may be combined arbitrarily.
  • the third pad portion 131 of the third lead 13 does not extend to the position overlapping the die pad portion 111 in the z direction, and includes portions corresponding to the joint portion 131b and the connecting portion 131c in the first embodiment. do not have.
  • the semiconductor device A30 further includes a connection member 32 .
  • the connection member 32 is, for example, a bonding wire, and is electrically connected to the third lead main surface 1311 of the third pad portion 131 of the third lead 13 and the third electrode 203 of the semiconductor element 20 .
  • the material of the connection member 32 is not limited at all, and includes gold (Au), for example.
  • the number of connection members 32 is not limited at all, and a plurality of connection members 32 may be provided.
  • the connection member 32 may be a metal plate (clip) containing metal such as aluminum (Al), copper (Cu), gold (Au), or the like.
  • the semiconductor device A30 can be surface-mounted. Further, as understood from the present embodiment, the specific form of conduction between the third lead 13 and the semiconductor element 20 is not limited at all. Instead of connecting the third lead 13 and the semiconductor element 20 with the connection member 32, the second lead 12 and the semiconductor element 20 may be connected with a connection member.
  • FIG. 28 shows a semiconductor device according to a fourth embodiment of the present disclosure.
  • the semiconductor device A40 of this embodiment differs from the embodiment described above in the shapes of the second lead 12 and the third lead 13 .
  • the configuration and operation of other portions of this embodiment are the same as those of the first embodiment. It should be noted that each part of the above-described first to third embodiments and modifications may be arbitrarily combined.
  • the position of the fourth portion 1221 of the second terminal portion 122 in the z-direction is the same as that of the first portion 1121 of the first terminal portion 112 of the first lead 11 . Therefore, the first penetration position of the third resin surface 43 by the first part 1121 and the second penetration position of the fourth resin surface 44 by the fourth part 1221 are at the same position in the z direction.
  • the position of the body portion 121 a of the second pad portion 121 in the z direction is the same as that of the first portion 1121 of the first terminal portion 112 .
  • the connecting portion 121c has a surface that is inclined with respect to the xy plane so that as it proceeds from the main body portion 121a to one side in the x direction, it proceeds to one side in the z direction.
  • the third lead 13 is similar to the second lead 12, the seventh portion 1321 is at the same position as the first portion 1121 in the z direction, and the connecting portion 131c is inclined in the same manner as the connecting portion 121c. have a face.
  • the semiconductor device A40 can be surface-mounted. Further, according to the present embodiment, the first penetration position of the first part 1121 through the third resin surface 43 and the second penetration position of the fourth part 1221 through the fourth resin surface 44 can be the same position in the z direction. .
  • FIG. 29 shows a semiconductor device according to a fifth embodiment of the present disclosure.
  • the semiconductor device A50 of this embodiment differs from the embodiment described above in the configuration of the first lead 11 .
  • the configuration and operation of other portions of this embodiment are the same as those of the first embodiment. It should be noted that each part of the above-described first to fourth embodiments and modifications may be combined arbitrarily.
  • the die pad portion 111 and the first portion 1121 have the same size in the z direction.
  • the first lead 11 has a connecting portion 113 .
  • the connecting portion 113 connects the die pad portion 111 and the first portion 1121 of the first terminal portion 112 .
  • only one first portion 1121 penetrates the third resin surface 43 .
  • the position in the z direction of the first lead main surface 1111 and the position in the z direction of the surface of the first portion 1121 facing one side in the z direction are different from each other.
  • the first penetration position of the first part 1121 through the third resin surface 43 and the second penetration position of the fourth part 1221 through the fourth resin surface 44 are at the same position in the z direction.
  • the semiconductor device A50 can be surface-mounted. Also, as understood from this embodiment, the relationship between the size of the die pad portion 111 in the z direction and the size of the first portion 1121 in the z direction is not limited at all.
  • Sixth embodiment 30-31 show a semiconductor device according to a sixth embodiment of the present disclosure.
  • the semiconductor device A60 of this embodiment differs from the embodiment described above in the configuration of the first terminal portion 112 .
  • the configuration and operation of other portions of this embodiment are the same as those of the first embodiment. It should be noted that each part of the above-described first to fifth embodiments and modifications may be combined arbitrarily.
  • the first lead 11 of this embodiment has a plurality of first terminal portions 112 .
  • the plurality of first terminal portions 112 are arranged side by side in the y direction.
  • Each first terminal portion 112 has a first portion 1121, a second portion 1122 and a third portion 1123, respectively.
  • the first part 1121 is connected to the die pad part 111.
  • the first portion 1121 extends from the first lead side surface 1113 of the die pad portion 111 to one side in the x direction, and is parallel to the xy plane in the illustrated example.
  • the first part 1121 penetrates through the third resin surface 43 .
  • the shape of the first part 1121 is not limited at all, and in the illustrated example, it is rectangular when viewed in the z direction.
  • the second part 1122 is located on one side of the first part 1121 in the z direction.
  • the second part 1122 is used when the semiconductor device A10 is surface-mounted on a circuit board or the like.
  • the second portion 1122 has a shape extending along the x direction.
  • the third part 1123 is interposed between the first part 1121 and the second part 1122.
  • the third portion 1123 extends from the first portion 1121 to one side in the z direction.
  • the third portion 1123 is tilted with respect to the z direction (yz plane).
  • the shape of the third part 1123 is not limited at all, and in the illustrated example it is rectangular when viewed in the x direction.
  • the semiconductor device A60 can be surface-mounted. Furthermore, the first lead 11 has a plurality of first terminal portions 112 . Thereby, the mounting strength of the semiconductor device A60 can be increased. As understood from this embodiment, the configuration of the first terminal portion 112 is not limited at all.
  • FIG. 32 shows a modification of the semiconductor device A60.
  • the first lead back surface 1112 has a portion protruding to one side in the x direction from the third resin surface 43 when viewed in the z direction. That is, in this modified example, not the first portion 1121 but the die pad portion 111 penetrates the third resin surface 43 .
  • the semiconductor device A61 can be surface-mounted, and the same effect as the above-described example can be obtained. Further, since the first lead back surface 1112 has a portion that protrudes from the third resin surface 43 to one side in the x direction, it is possible to increase the area of the first lead back surface 1112 facing the heat sink 91 . Therefore, the heat dissipation efficiency from the semiconductor device A61 to the heat sink 91 can be enhanced.
  • FIG. 33 shows a semiconductor device according to the seventh embodiment of the present disclosure.
  • the semiconductor device A70 of this embodiment differs from the embodiment described above in the configuration of the first terminal portion 112, the second terminal portion 122, and the third terminal portion 132.
  • FIG. The configuration and operation of other portions of this embodiment are the same as those of the first embodiment. It should be noted that each part of the above-described first to sixth embodiments and modifications may be combined arbitrarily.
  • the first terminal portion 112 has a first portion 1121 that does not penetrate the third resin surface 43, a third portion 1123 that extends in the sealing resin 40 in the z direction, and a second portion 1122 that extends in the z direction. 1 is exposed from the resin surface 41 .
  • the fourth portion 1221 does not penetrate the fourth resin surface 44
  • the sixth portion 1223 extends in the sealing resin 40 in the z-direction
  • the fifth portion 1222 extends through the first resin surface 41.
  • the third terminal portion 132 has a seventh portion 1321 that does not penetrate the fourth resin surface 44, a ninth portion 1323 that extends in the sealing resin 40 in the z direction, and an eighth portion 1322 are exposed from the first resin surface 41 .
  • the semiconductor device A70 can be surface-mounted. Furthermore, compared to the case where the first terminal portion 112, the second terminal portion 122, and the third terminal portion 132 penetrate the third resin surface 43 or the fourth resin surface 44 and protrude in the x direction, the semiconductor device A70 is The mounting area (dimension in the x direction) can be reduced. As understood from this embodiment, the configurations of the first terminal portion 112, the second terminal portion 122, and the third terminal portion 132 are not limited at all.
  • FIG. 34 shows a modification of the semiconductor device A70.
  • the sealing resin 40 has a recessed region 411 .
  • the recessed area 411 is an area recessed in the z direction from the first resin surface 41 .
  • the concave region 411 is located between the second part 1122 and the fifth part 1222 and the eighth part 1322 in the x-direction.
  • the recessed region 411 is gently recessed toward the other side in the z direction as it proceeds from the vicinity of the second portion 1122 toward the other side in the x direction, It is a concave portion gently recessed to the other side in the z direction as it advances to the side.
  • the concave region 411 is formed so as not to affect the second pad portion 121 , the third pad portion 131 and the semiconductor element 20 .
  • the semiconductor device A71 can be surface-mounted, and the same effect as the above-described example can be obtained.
  • the sealing resin 40 has the recessed region 411, the distance (creeping distance) along the surface of the sealing resin 40 from the second portion 1122 to the fifth portion 1222 and the eighth portion 1322 is extended. be able to.
  • the concave region 411 is not limited to the case where there is only one gentle concave portion as in this modified example.
  • the recessed region 411 may have multiple recesses.
  • the semiconductor device according to the present disclosure is not limited to the above-described embodiments.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be changed in various ways.
  • the present disclosure includes embodiments set forth in the following appendices.
  • Appendix 1 a semiconductor element;
  • a first lead including: a first terminal portion; and, a second lead spaced apart from the first lead; a sealing resin having a first resin surface facing one side in the thickness direction and a second resin surface facing the other side in the thickness direction, and covering the semiconductor element and part of the die pad section; prepared, the rear surface of the first lead is exposed from the second resin surface, the second lead includes a second pad portion electrically connected to the semiconductor element, and a second terminal portion connected to the second pad portion, The second terminal portion includes a fourth portion connected to the second pad portion, and a fifth portion located on one side in the thickness direction with respect to the fourth portion and used for mounting. semiconductor device.
  • the semiconductor device according to appendix 1 wherein the sealing resin has a third resin surface facing one side in a first direction perpendicular to the thickness direction, and a fourth resin surface facing the other side in the first direction.
  • the first terminal portion includes a first portion connected to the die pad portion, a second portion located on one side in the thickness direction with respect to the first portion and used for mounting, the first portion and the first terminal portion. 3.
  • Appendix 4 The first part penetrates the third resin surface and is separated from the second resin surface in the thickness direction,
  • the semiconductor device according to any one of appendices 4 to 7, wherein the surface of the first portion on one side in the thickness direction is flush with the main surface of the first lead.
  • the second terminal portion includes a sixth portion interposed between the fourth portion and the fifth portion, The third part and the sixth part extend in the thickness direction within the sealing resin, The semiconductor device according to appendix 3, wherein the second portion and the fifth portion are exposed from the first resin surface.
  • Appendix 10. 10 The semiconductor device according to appendix 9, wherein the sealing resin has a recess recessed in the thickness direction from the first resin surface between the second part and the fifth part in the first direction. Appendix 11.
  • the third lead spaced apart from the first lead and the second lead; the third lead includes a third pad portion and a third terminal portion connected to the third pad portion; The third terminal portion includes a seventh portion connected to the third pad portion, an eighth portion located on one side in the thickness direction of the seventh portion and used for mounting, and the seventh portion.
  • A10, A11, A12, A13, A14 semiconductor devices A15, A16, A20, A30, A40: semiconductor devices A50, A60, A61, A70, A71: semiconductor device 10: conductive member 11: first lead 12: second lead 13: Third lead 14: Fourth lead 20: Semiconductor element 29: Bonding layer 32: Connection member 40: Sealing resin 41: First resin surface 42: Second resin surface 43: Third resin surface 44: Fourth resin Surface 45: Fifth resin surface 46: Sixth resin surface 47: Concave portion 48: Convex portion 49: Groove 91: Heat sink 92: Circuit board 111: Die pad portion 112: First terminal portion 113: Connecting portion 121: Second pad portion 121a: main body portion 121b: joint portion 121c: connection portion 131: third pad portion 131a: main body portion 131b: joint portion 131c: connection portion 132: third terminal portion 141: fourth pad portion 142: fourth terminal portion 201: First electrode 202: Second electrode 203: Third electrode 205:

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CN202280077729.1A CN118382925A (zh) 2021-12-01 2022-11-16 半导体装置
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US20240021487A1 (en) * 2022-07-12 2024-01-18 Semiconductor Components Industries, Llc Semiconductor device package

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JP2011082535A (ja) * 2010-11-15 2011-04-21 Renesas Electronics Corp 半導体装置
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JP2020107637A (ja) * 2018-12-26 2020-07-09 ルネサスエレクトロニクス株式会社 半導体装置

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