WO2023097940A1 - 一种功率放大电路及射频信号的处理方法 - Google Patents

一种功率放大电路及射频信号的处理方法 Download PDF

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WO2023097940A1
WO2023097940A1 PCT/CN2022/084374 CN2022084374W WO2023097940A1 WO 2023097940 A1 WO2023097940 A1 WO 2023097940A1 CN 2022084374 W CN2022084374 W CN 2022084374W WO 2023097940 A1 WO2023097940 A1 WO 2023097940A1
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output
management module
power management
triode
power
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PCT/CN2022/084374
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French (fr)
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胡滨
郭嘉帅
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深圳飞骧科技股份有限公司
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only

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  • the invention relates to the field of electronic technology, in particular to a power amplifier circuit and a radio frequency signal processing method.
  • an existing power amplifier circuit structure includes a power management module 1, a transistor T1, and an output matching module 2.
  • the transistor T1 is an NPN structure, and the collector of the transistor T1 is directly connected to VBAT.
  • the power management module 1 The output bias signal VB is connected to the base of the transistor T1 through the resistor R1 to provide bias for the transistor T1, the emitter is grounded, the radio frequency input signal RFIN is connected to the base of T1 through the capacitor C1, and the collector is output through the output matching network RF signal.
  • This circuit is widely used in radio frequency power amplifier circuits.
  • the collector of the triode T1 Since the collector of the triode T1 is directly connected to the power supply, it is powered by the output voltage of the bias circuit. When the triode T1 is working, the fluctuation of the power supply voltage will cause the power of the triode T1 to change accordingly. If the power supply voltage is disturbed and rises, The voltage swing of the collector also increases accordingly. If the breakdown voltage of the collector is exceeded, the device will break down and cause failure. Especially when the load impedance is mismatched, the voltage of the collector will be greater due to the reflection of the signal. It is more likely to cause device breakdown failure.
  • the object of the present invention is to overcome at least one technical problem above and provide a power amplifier circuit.
  • the present invention provides a power amplifier circuit, including: a power management module, a triode, and an output matching module;
  • the input end of the power management module is used to connect to a power supply, and the power supply is supplied by the power supply;
  • the first output end of the power management module is connected to the base of the triode, and the first output end of the power management module outputs a bias voltage for biasing the radio frequency input signal;
  • the second output terminal of the power management module is connected to the collector of the triode to supply power for the triode;
  • the input terminal of the output matching module is connected to the collector of the triode, and the radio frequency signal amplified by the triode is output through the output terminal of the output matching module.
  • a resistor R1 is also provided between the first output terminal of the power management module and the base of the triode.
  • an inductor L1 is further connected between the second output terminal of the power management module and the collector between the triode.
  • the power management module is provided with a bias voltage processing unit for processing the input voltage to generate a bias voltage.
  • the power management module is provided with an output voltage limiting unit for limiting the output voltage threshold of the power management module.
  • the present invention provides a method for processing radio frequency signals, comprising the steps of:
  • the power management module is powered by a power supply
  • the radio frequency signal amplified by the triode is matched and outputted through the output matching module.
  • the bias voltage output by the first output terminal of the power management module is current-matched through a resistor R1.
  • the second output terminal of the power management module is connected to an inductor L1.
  • the power management module processes the input voltage to generate a bias voltage, so as to obtain the bias voltage output by the first output terminal.
  • the power management module limits the bias voltage, so as to limit the threshold of the bias voltage output by the first output terminal.
  • the influence of the power supply VBAT cannot directly affect the triode T1, but is sent to the triode T1 after isolation processing by the power management module.
  • the design can realize that the output voltage is slightly affected by VBAT, thereby avoiding the damage of the output voltage of the power supply VBAT due to fluctuations and rising beyond the breakdown voltage of the transistor T1.
  • this embodiment can also limit the output voltage of the power management chip so that when the VBAT voltage exceeds a certain threshold, the output does not change with the increase of VBAT, which is more helpful to improve the robustness of the power amplifier.
  • Fig. 1 is the structural block diagram of existing a kind of power amplifying circuit
  • Fig. 2 is the structural block diagram of the power amplifying circuit of the embodiment of the present invention.
  • FIG. 3 is a schematic circuit diagram of a power management module in an embodiment of the present invention.
  • Fig. 4 is the schematic circuit diagram of the linear regulator in the embodiment of the present invention.
  • FIG. 5 is a flowchart of a radio frequency signal processing method according to an embodiment of the present invention.
  • the embodiment of the present invention provides a power amplifier circuit, including: a power management module 10 , a transistor T1 , and an output matching module 20 .
  • the input terminal of the power management module 10 is used to connect to the power supply VBAT, and the power supply is supplied by the power supply; the first output terminal of the power management module 10 is connected to the base of the triode T1, and the power management module The first output terminal of 10 outputs a bias voltage VB for providing bias to the radio frequency input signal RFIN; the second output terminal of the power management module 10 is connected to the collector of the triode T1 to supply power for the triode T1
  • the input terminal of the output matching module 20 is connected to the collector of the transistor T1, and the output terminal of the output matching module 20 outputs the radio frequency signal amplified by the transistor T1.
  • a resistor R1 is also provided between the first output terminal of the power management module 10 and the base of the triode T1.
  • an inductor L1 is further connected between the second output end of the power management module 10 and the collector of the triode T1.
  • the power management module 10 specifically includes: a logic control circuit 11, a bias voltage processing unit 12, a reference voltage circuit 13, and two output voltage Limiting unit 14.
  • the logic control circuit 11 is used to control the working state of each module (whether it works), the bias voltage processing unit 12 provides bias for the reference voltage circuit 13 and two output voltage limiting units 14, and the reference voltage circuit 13 provides accurate reference voltage for Output voltage limiting unit 14.
  • the output voltage limiting unit 14 is a linear voltage regulator, which is used to limit the output voltage threshold of the power management module.
  • FIG. 4 it is a schematic circuit diagram of the output voltage limiting unit 14 in this embodiment, including an amplifier Q, a MOS transistor M1 , a resistor R1 , a resistor R2 , and a capacitor C1 .
  • the influence of the power supply VBAT cannot directly affect the triode T1, but is isolated through the power management module 10 (that is, the triode T1 is not directly connected to VBAT, but connected to
  • LDO linear voltage regulator
  • this embodiment can also limit the output voltage of the power management chip so that when the VBAT voltage exceeds a certain threshold, the output does not change with the increase of VBAT, which is more helpful to improve the robustness of the power amplifier.
  • the implementation of the present invention provides a method for processing radio frequency signals, including steps:
  • the power management module supplies power through the power supply
  • S2 process the input voltage of the power supply through the power management module, output a bias voltage through the first output terminal to bias the input radio frequency signal, and output the power supply voltage through the second output to supply power to the triode;
  • the bias voltage output by the first output terminal of the power management module 10 is current-matched through a resistor R1.
  • the second output terminal of the power management module 10 is connected to an inductor L1.
  • the power management module 10 processes the input voltage to generate a bias voltage, so as to obtain a bias voltage VB output from the first output terminal.
  • the power management module 10 limits the bias voltage, so as to limit the threshold of the bias voltage output by the first output terminal.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

一种功率放大电路及射频信号处理方法,功率放大电路包括:电源管理模块、三极管、以及输出匹配模块;电源管理模块的输入端用于连接电源,通过电源进行供电;电源管理模块的第一输出端连接至三极管的基极,电源管理模块的第一输出端输出一偏置电压,用于对射频输入信号提供偏置;电源管理模块的第二输出端连接至三极管的集电极,为三极管供电;输出匹配模块的输入端与三极管的集电极连接,通过输出匹配模块的输出端输出经三极管放大后的射频信号。

Description

一种功率放大电路及射频信号的处理方法 【技术领域】
本发明涉及电子技术领域,尤其涉及一种功率放大电路及射频信号的处理方法。
【背景技术】
如图1所示为现有的一种功率放大电路结构,包括电源管理模块1,三极管T1,以及输出匹配模块2,三极管T1为NPN结构,三极管T1的集电极直接接VBAT,电源管理模块1输出的偏置信号VB,经过电阻R1接至三极管T1的基极,为三极管T1提供偏置,发射极接地,射频输入信号RFIN经过电容C1接至T1的基极,集电极经过输出匹配网络输出射频信号。该电路广泛用于射频功率放大电路中。
由于三极管T1的集电极直接连接至电源,通过偏置电路的输出电压进行供电,在三极管T1工作时,电源电压的波动将导致三极管T1的功率随之变化,若电源电压受干扰而升高,集电极的电压摆幅也随之升高,若超过集电极的击穿电压,器件将发生击穿导致失效,尤其在负载阻抗失配时,由于信号的反射,集电极的电压将更大,更加容易导致器件击穿失效。
【发明内容】
本发明的目的是克服上述至少一个技术问题,提供一种功率放大电路。
为了实现上述目的,本发明提供一种功率放大电路,包括:电源管理模块、三级管、以及输出匹配模块;
所述电源管理模块的输入端用于连接电源,通过所述电源进行供电;
所述电源管理模块的第一输出端连接至所述三极管的基极,所述电源管理模块的第一输出端输出一偏置电压,用于对射频输入信号提供偏置;
所述电源管理模块的第二输出端连接至所述三极管的集电极为所述三极管供电;
所述输出匹配模块的输入端与所述三极管的集电极连接,通过所述输出匹配模块的输出端输出经所述三极管放大后的射频信号。
优选的,所述电源管理模块的第一输出端与所述三极管的基极之间还设置有一电阻R1。
优选的,所述电源管理模块的第二输出端与所述三极管之间的集电极之间还连接有一电感L1。
优选的,所述电源管理模块设置有偏置电压处理单元,用于对所述输入电压进行处理生成偏置电压。
优选的,所述电源管理模块设置有输出电压限制单元,用于对所述电源管理模块的输出电压阈值进行限制。
第二方面,本发明提供一种射频信号的处理方法,包括步骤:
电源管理模块通过电源进行供电;
通过电源管理模块对所述电源输入电压进行处理,经第一输出端输出一偏置电压对输入射频信号进行偏置,经第二输出输出供电电压对三极管进行供电;
通过输出匹配模块对经过三极管放大后的射频信号进行匹配输出。
优选的,所述电源管理模块的第一输出端输出的偏置电压通过一电阻R1进行电流匹配。
优选的,所述电源管理模块的第二输出端输端连接一电感L1。
优选的,所述电源管理模块对所述输入电压进行处理生成偏置电压,以得到第一输出端输出的偏置电压。
优选的,所述电源管理模块对所述偏置电压进行限制处理,以对 第一输出端输出的偏置电压的阈值进行限制。
与相关技术相比,本发明由于三极管T1的供电由电源管理模块提供,电源VBAT的影响无法直接影响三极管T1,而是经过电源管理模块进行隔离处理后在送给三极管T1,通过对电源管理模块进行设计,可实现其输出的电压受VBAT影响很小,从而避免了电源VBAT的输出电压受波动升高超出三极管T1击穿电压而致使其损坏。此外,本实施例还通过可对电源管理芯片的输出电压进行限制,使其当VBAT电压超过某个阈值后输出不随VBAT升高而变化,更有助于提升功率放大器的健壮性。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图,其中:
图1为现有一种功率放大电路的结构框图;
图2为本发明实施例功率放大电路的结构框图;
图3为本发明实施例中电源管理模块的电路原理图;
图4为本发明实施例中线性稳压器的电路原理图;
图5为本发明实施例射频信号处理方法流程图。
【具体实施方式】
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例, 都属于本发明保护的范围。
实施例一
请参阅图2所示,本发明实施例提供一种功率放大电路,包括:电源管理模块10、三级管T1、以及输出匹配模块20。
其中,所述电源管理模块10的输入端用于连接电源VBAT,通过所述电源进行供电;所述电源管理模块10的第一输出端连接至所述三极管T1的基极,所述电源管理模块10的第一输出端输出一偏置电压VB,用于对射频输入信号RFIN提供偏置;所述电源管理模块10的第二输出端连接至所述三极管T1的集电极为所述三极管T1供电;所述输出匹配模块20的输入端与所述三极管T1的集电极连接,通过所述输出匹配模块20的输出端输出经所述三极管T1放大后的射频信号。
在本实施例中,所述电源管理模块10的第一输出端与所述三极管T1的基极之间还设置有一电阻R1。
在本实施例中,所述电源管理模块10的第二输出端与所述三极管T1之间的集电极之间还连接有一电感L1。
在本实施例中,如图3所示,作为电源管理模块10的一种可实施方式,其具体包括:逻辑控制电路11、偏置电压处理单元12、参考电压电路13、和两个输出电压限制单元14。逻辑控制电路11用于控制各个模块的工作状态(是否工作),偏置电压处理单元12为参考电压电路13和两个输出电压限制单元14提供偏置,参考电压电路13提供精准的参考电压给输出电压限制单元14。
进一步的,本实施例中,输出电压限制单元14为线性稳压器,用于对所述电源管理模块的输出电压阈值进行限制。如图4所示,为本实施例中输出电压限制单元14的电路原理图,包括放大器Q、MOS管M1、电阻R1、电阻R2、以及电容C1。参考电压Vref由放大器的负输入端输入,电源连接MOS管M1源极,输出电压Vout由MOS管M1的漏极输出,由于输出电压Vout=K*Vref,K为放大系数,因此,Vref与VBAT无关。
本实施例中,由于三极管T1的供电由电源管理模块提供,电源VBAT的影响无法直接影响三极管T1,而是经过电源管理模块10进行隔离处理(即三极管T1并非直接接至VBAT上,而是接在电源管理模块的输出,二者之间可由LDO(线性稳压器)实现)后在送给三极管T1,通过对电源管理模块10进行设计(即线性稳压器的输出电压Vout=K*Vref,Vref可通过带隙基准实现,其输出电压受VBAT影响非常小),可实现其输出的电压受VBAT影响很小,从而避免了电源VBAT的输出电压受波动升高超出三极管T1击穿电压而致使其损坏。此外,本实施例还通过可对电源管理芯片的输出电压进行限制,使其当VBAT电压超过某个阈值后输出不随VBAT升高而变化,更有助于提升功率放大器的健壮性。
实施例二
如图5所示,并结合图2,本发明实施提供一种射频信号的处理方法,包括步骤:
S1,电源管理模块通过电源进行供电;
S2,通过电源管理模块对所述电源输入电压进行处理,经第一输出端输出一偏置电压对输入射频信号进行偏置,经第二输出输出供电电压对三极管进行供电;
S3,通过输出匹配模块对经过三极管放大后的射频信号进行匹配输出。
本实施例中,所述电源管理模块10的第一输出端输出的偏置电压通过一电阻R1进行电流匹配。
本实施例中,所述电源管理模块10的第二输出端输端连接一电感L1。
本实施例中,所述电源管理模块10对所述输入电压进行处理生成偏置电压,以得到第一输出端输出的偏置电压VB。
本实施例中,所述电源管理模块10对所述偏置电压进行限制处理,以对第一输出端输出的偏置电压的阈值进行限制。
以上所述的仅是本发明的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本发明创造构思的前提下,还可以做出改进,但这些均属于本发明的保护范围。

Claims (10)

  1. 一种功率放大电路,其特征在于,包括:电源管理模块、三级管、以及输出匹配模块;
    所述电源管理模块的输入端用于连接电源,通过所述电源进行供电;
    所述电源管理模块的第一输出端连接至所述三极管的基极,所述电源管理模块的第一输出端输出一偏置电压,用于对射频输入信号提供偏置;
    所述电源管理模块的第二输出端连接至所述三极管的集电极为所述三极管供电;
    所述输出匹配模块的输入端与所述三极管的集电极连接,通过所述输出匹配模块的输出端输出经所述三极管放大后的射频信号。
  2. 如权利要求1所述的功率放大电路,其特征在于,所述电源管理模块的第一输出端与所述三极管的基极之间还设置有一电阻R1。
  3. 如权利要求1所述的功率放大电路,其特征在于,所述电源管理模块的第二输出端与所述三极管之间的集电极之间还连接有一电感L1。
  4. 如权利要求1所述的功率放大电路,其特征在于,所述电源管理模块设置有偏置电压处理单元,用于对所述输入电压进行处理生成偏置电压。
  5. 如权利要求1所述的功率放大电路,其特征在于,所述电源管理模块设置有输出电压限制单元,用于对所述电源管理模块的输出电压阈值进行限制。
  6. 一种射频信号的处理方法,其特征在于,包括步骤:
    电源管理模块通过电源进行供电;
    通过电源管理模块对所述电源输入电压进行处理,经第一输出端输出一偏置电压对输入射频信号进行偏置,经第二输出输出供电电压对三极管进行供电;
    通过输出匹配模块对经过三极管放大后的射频信号进行匹配输出。
  7. 如权利要求6所述的射频信号的处理方法,其特征在于,所述电源管理模块的第一输出端输出的偏置电压通过一电阻R1进行电流匹配。
  8. 如权利要求6所述的射频信号的处理方法,其特征在于,所述电源管理模块的第二输出端输端连接一电感L1。
  9. 如权利要求6所述的射频信号的处理方法,其特征在于,所述电源管理模块对所述输入电压进行处理生成偏置电压,以得到第一输出端输出的偏置电压。
  10. 如权利要求6所述的射频信号的处理方法,其特征在于,所述电源管理模块对所述偏置电压进行限制处理,以对第一输出端输出的偏置电压的阈值进行限制。
PCT/CN2022/084374 2021-11-30 2022-03-31 一种功率放大电路及射频信号的处理方法 WO2023097940A1 (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102769433A (zh) * 2012-06-06 2012-11-07 广州慧智微电子有限公司 采用nmos调整管的射频功率放大器功率控制电路
CN108418558A (zh) * 2017-02-09 2018-08-17 株式会社村田制作所 功率放大电路以及高频模块
CN108551333A (zh) * 2018-03-29 2018-09-18 广州慧智微电子有限公司 射频功率放大电路
CN114157252A (zh) * 2021-11-30 2022-03-08 深圳飞骧科技股份有限公司 一种功率放大电路及射频信号的处理方法

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* Cited by examiner, † Cited by third party
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CN109302149B (zh) * 2017-07-25 2023-04-07 中兴通讯股份有限公司 信号放大电路
JP7173915B2 (ja) * 2019-03-28 2022-11-16 ラピスセミコンダクタ株式会社 電源回路
CN113131880A (zh) * 2019-12-30 2021-07-16 上海麓慧科技有限公司 射频功率放大器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102769433A (zh) * 2012-06-06 2012-11-07 广州慧智微电子有限公司 采用nmos调整管的射频功率放大器功率控制电路
CN108418558A (zh) * 2017-02-09 2018-08-17 株式会社村田制作所 功率放大电路以及高频模块
CN108551333A (zh) * 2018-03-29 2018-09-18 广州慧智微电子有限公司 射频功率放大电路
CN114157252A (zh) * 2021-11-30 2022-03-08 深圳飞骧科技股份有限公司 一种功率放大电路及射频信号的处理方法

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