WO2023042834A1 - 水晶デバイスの製造法 - Google Patents

水晶デバイスの製造法 Download PDF

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Publication number
WO2023042834A1
WO2023042834A1 PCT/JP2022/034326 JP2022034326W WO2023042834A1 WO 2023042834 A1 WO2023042834 A1 WO 2023042834A1 JP 2022034326 W JP2022034326 W JP 2022034326W WO 2023042834 A1 WO2023042834 A1 WO 2023042834A1
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WO
WIPO (PCT)
Prior art keywords
gold
layer
metal
silver
crystal device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/034326
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English (en)
French (fr)
Japanese (ja)
Inventor
公彦 竹内
裕 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Genergy Co Ltd
Showa Shinku Co Ltd
Original Assignee
Genergy Co Ltd
Showa Shinku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Genergy Co Ltd, Showa Shinku Co Ltd filed Critical Genergy Co Ltd
Priority to CN202280062672.8A priority Critical patent/CN117941252A/zh
Priority to JP2022555910A priority patent/JP7433592B2/ja
Publication of WO2023042834A1 publication Critical patent/WO2023042834A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Definitions

  • the present invention relates to a method for manufacturing a crystal device.
  • Crystal devices are used in a wide variety of electronic devices such as digital cameras, smartphones, watches, personal computers, televisions, and media players.
  • a crystal device is a component that produces a reference signal (clock) that is indispensable for digital control, and is an important component that acts as the heart of a human being. (Patent Document 1).
  • a technique of using a gold-silver alloy for example, 22-karat gold or 20-karat gold, etc.
  • the process of recovering and refining gold or the like adhering to the target material used in the main sputtering apparatus is more complicated than in the case of a single metal, and the cost reduction effect is small.
  • the object of the present invention is to provide a crystal device that enables cost reduction of noble metal targets as raw material costs without deteriorating aging characteristics.
  • the method for manufacturing a crystal device of the present invention comprises a base layer, a layer containing gold and a second metal, a layer containing gold and a second metal, and a layer containing gold and gold in this order from the surface of the crystal resonator element using a carousel sputtering apparatus. , a layer comprising a second metal and having at least 50% by volume of the second metal, gold, a layer comprising the second metal and having less than 50% by volume of the second metal, and 95% by volume of gold % or more of the metal.
  • the second metal may be a silver layer.
  • FIG. 1 is a plan view (viewed from above) of a carousel-type three-source sputtering apparatus used in the method of manufacturing a crystal device according to the present embodiment, and is a view showing a film forming chamber.
  • FIG. FIG. 1 is a schematic vertical cross-sectional view of electrodes of a crystal device deposited in this embodiment, and one circle is the size of a molecule such as gold.
  • FIG. 1 is a schematic vertical cross-sectional view of electrodes of a crystal device deposited in this embodiment, and one circle is the size of a molecule such as gold.
  • FIG. 1 is a schematic vertical cross-sectional view of electrodes of a crystal device formed in a modified embodiment, and one circle is the size of a molecule such as gold. In FIG. is arranged, but it is omitted on one side.
  • FIG. 1A is a plan view of the crystal vibrating piece 12
  • FIG. 1B is a front view of the crystal vibrating piece 12
  • FIG. 1C is a bottom view of the crystal vibrating piece 12.
  • the electrode 3A in FIG. 1A is arranged so that the electrode 3A largely occupies the plane of the crystal vibrating piece 12 .
  • the electrode 3B is arranged so as to occupy the lower right end of the plane of the crystal vibrating piece 12 in a small area.
  • electrodes 3A and 3B are arranged so as to continue from FIG. 1(A).
  • the electrode 3B is arranged so that the bottom surface of the crystal vibrating piece 12 is largely occupied as continued from FIG. 1(B).
  • the method for manufacturing the crystal device 1 of the present embodiment uses the carousel type three-source sputtering apparatus 10 shown in FIG.
  • the carousel type three-source sputtering apparatus 10 revolves and rotates a substrate 13 on which several tens to several hundreds of crystal vibrating pieces (workpieces) 12 are set. 18 are placed and sputtering is performed to continuously form films of dissimilar metals.
  • the carousel type three-source sputtering apparatus 10 has a revolution speed of 5 to 99 rpm, rotates in the direction of the arrow M, has a short idle movement time, and has individual sputtering targets 14, 16, 18 (chromium target 14, An arbitrary film composition can be formed by controlling the film forming power of the silver target 16 and the gold target 18) or ON/OFF of the power supply.
  • the power to the silver target 16 and gold target 18 is turned off.
  • the film forming power is reduced and/or the film forming time is shortened.
  • a chromium layer as a base layer is formed on the surface of the crystal vibrating piece 12
  • a gold film is formed on the surface of the base layer, and then silver and gold are alternately laminated.
  • a gold film is deposited on the surface layer furthest from the underlying layer.
  • FIG. 3 shows the layered structure of each film in this way.
  • a layer 30 having chromium 20, gold 22, and silver 24, which are constituent elements of the underlying layer is formed in order from the surface of the crystal resonator element (workpiece 12).
  • a layer 32 containing gold 22 and silver 24 and containing 50% by volume or more of silver 24 is formed.
  • a layer 34 comprising gold 22 and silver 24 with less than 50% by volume of silver 24 is then deposited.
  • a layer 36 containing 95% by volume or more of gold 22 is deposited.
  • the crystal device 1 is now manufactured.
  • the crystal device 1 that enables cost reduction of the noble metal target without degrading the aging characteristics. It is said that the aging characteristics of the electrodes of the crystal device 1 do not deteriorate because the gold electrodes contain less easily oxidizable materials (silver, iron, chromium, etc.). In this respect, according to the present embodiment, since silver and gold are alternately laminated, the gold electrode contains less materials that are easily oxidized, and the aging characteristics are not degraded.
  • a gold/silver alloy target has been put into practical use for forming the electrodes of the crystal device 1 .
  • this alloy target can reduce the cost by reducing the weight of gold, it is necessary to form a uniform alloy composition, and to recover precious metals such as defective products or anti-adhesion plates, gold 22 and silver 24 are used. Refining is required, man-hours are required, and the cost reduction rate is inferior to others. In this respect as well, the method of forming the electrodes of the crystal device 1 of the present embodiment is superior.
  • the concentration of silver 24 can be gradually changed (layers 32, 34, and 36). , the volume change due to the temperature of each layer can be moderated, and film stress and the like can be suppressed.
  • the film formation speed of the carousel type three-source sputtering apparatus 10 is almost the same as the film formation speed of the so-called inter-back type sputtering.
  • film formation can be performed at a rate several times to several tens of times higher than that of the so-called inter-back type sputtering.
  • inter-back type sputtering compared to the carousel type multi-source sputtering apparatus 10, idle movement time is increased and the productivity (apparatus capacity) of the sputtering process is deteriorated.
  • one or two substrates 13 on which several tens to several hundreds of crystal vibrating pieces 12 are set are placed on a conveying jig, and are spaced between the targets. is moved back and forth, but the film formation is only the forward trip, and the return trip is an idle movement. make worse.
  • the film can be formed by rotating 8 to 12 substrates 13 in a fixed direction. Since the time does not change, the productivity (apparatus capacity) of the sputtering process is not deteriorated.
  • the silver 24 and the like are slightly exposed in the cross section in the film thickness direction during the layered film formation of the silver 24, the gold 22 and the like. However, this degree of exposure hardly degrades the aging characteristics of the crystal device 1 .
  • silver 24 and gold 22 are deposited in a layered manner, but instead of silver 24 (second metal), one, two, or three layers of titanium, tungsten, nickel, or the like are used. Seeds may be used.
  • the carousel-type three-source sputtering apparatus 10 is used in the present embodiment, but a carousel-type four-source sputtering apparatus or the like may be used to use sputtering targets of other elements or multiple elements. .
  • the carousel sputtering apparatus 10 is used to sequentially form a base layer, a layer containing gold and a second metal, a layer containing gold and a second metal, and a layer containing gold and a second metal.
  • a layer containing 50% by volume or more of the second metal, a layer containing gold and a second metal and containing less than 50% by volume of the second metal, and a layer formed of a metal containing 95% by volume or more of gold. is deposited.
  • FIG. 4 shows a layered structure of each film of a crystal device 40 which is a modification of the crystal device 1 .
  • a layer 64 containing chromium 60, gold 62, and silver 66, which are constituent elements of the underlying layer is deposited in order from the surface of the plate-shaped crystal 42.
  • a layer 68 comprising gold 62 and silver 66 with less than 50 volume percent silver 66 is then deposited.
  • a layer 70 having gold 62 and silver 66 with silver 24 sparse is then deposited.
  • a layer 72 comprising gold 62 and silver 66 with less than 50 volume percent silver 66 is then deposited.
  • a layer 74 comprising gold 62 and silver 66 with less than 50 volume percent silver 66 is then deposited.
  • a layer 76 comprising gold 62 and silver 66 with less than 50 volume percent silver 66 is then deposited.
  • a layer 78 is then deposited having gold 62 and silver 66 with less than 50% silver 66 by volume.
  • a layer 80 comprising gold 62 and silver 66 with less than 50 volume percent silver 66 is then deposited.
  • a layer 82 having gold 62 and 95% by volume or more is then deposited. The crystal device 40 is now manufactured.
  • the crystal device 40 that enables a reduction in the cost of precious metals as raw materials without degrading the aging characteristics, like the crystal device 1 .
  • the electrodes of the crystal device 40 do not degrade the aging characteristics if the gold electrodes do not contain a material that is easily oxidized (silver, iron, chromium, etc.).
  • the gold electrode contains less material that is easily oxidized, and the aging characteristics are improved, as in the crystal device 1. do not lower.
  • Reference Signs List 1 40 crystal device 10 carousel sputtering device 12 crystal vibrating piece (workpiece) 22,62 gold 24,66 second metal (silver) 30, 64 Underlayer 32, 34, 36, 68, 70, 72, 74, 76, 78, 80, 82 Layer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2022/034326 2021-09-19 2022-09-14 水晶デバイスの製造法 Ceased WO2023042834A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202280062672.8A CN117941252A (zh) 2021-09-19 2022-09-14 水晶器件的制造方法
JP2022555910A JP7433592B2 (ja) 2021-09-19 2022-09-14 水晶デバイスの製造法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021152722 2021-09-19
JP2021-152722 2021-09-19

Publications (1)

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WO2023042834A1 true WO2023042834A1 (ja) 2023-03-23

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PCT/JP2022/034326 Ceased WO2023042834A1 (ja) 2021-09-19 2022-09-14 水晶デバイスの製造法

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JP (1) JP7433592B2 (https=)
CN (1) CN117941252A (https=)
TW (1) TW202315179A (https=)
WO (1) WO2023042834A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637522U (https=) * 1979-08-28 1981-04-09
JP2005136575A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 圧電振動片とその励振電極の構造および電極形成方法ならびに、圧電デバイスと圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器
WO2015004755A1 (ja) * 2013-07-10 2015-01-15 株式会社シンクロン 光学式膜厚計，薄膜形成装置及び膜厚測定方法
JP2020025344A (ja) * 2019-11-15 2020-02-13 セイコーエプソン株式会社 振動素子、振動子、電子デバイス、電子機器、移動体および振動素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013236290A (ja) * 2012-05-10 2013-11-21 Nippon Dempa Kogyo Co Ltd 水晶振動片、水晶デバイス、及び水晶振動片の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637522U (https=) * 1979-08-28 1981-04-09
JP2005136575A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp 圧電振動片とその励振電極の構造および電極形成方法ならびに、圧電デバイスと圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器
WO2015004755A1 (ja) * 2013-07-10 2015-01-15 株式会社シンクロン 光学式膜厚計，薄膜形成装置及び膜厚測定方法
JP2020025344A (ja) * 2019-11-15 2020-02-13 セイコーエプソン株式会社 振動素子、振動子、電子デバイス、電子機器、移動体および振動素子の製造方法

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JP7433592B2 (ja) 2024-02-20
CN117941252A (zh) 2024-04-26
TW202315179A (zh) 2023-04-01
JPWO2023042834A1 (https=) 2023-03-23

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