JP7433592B2 - 水晶デバイスの製造法 - Google Patents

水晶デバイスの製造法 Download PDF

Info

Publication number
JP7433592B2
JP7433592B2 JP2022555910A JP2022555910A JP7433592B2 JP 7433592 B2 JP7433592 B2 JP 7433592B2 JP 2022555910 A JP2022555910 A JP 2022555910A JP 2022555910 A JP2022555910 A JP 2022555910A JP 7433592 B2 JP7433592 B2 JP 7433592B2
Authority
JP
Japan
Prior art keywords
gold
silver
layer
metal
crystal device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022555910A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023042834A1 (https=
Inventor
公彦 竹内
裕 矢部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GENERGY CO., LTD.
Showa Shinku Co Ltd
Original Assignee
GENERGY CO., LTD.
Showa Shinku Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GENERGY CO., LTD., Showa Shinku Co Ltd filed Critical GENERGY CO., LTD.
Publication of JPWO2023042834A1 publication Critical patent/JPWO2023042834A1/ja
Application granted granted Critical
Publication of JP7433592B2 publication Critical patent/JP7433592B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Physical Vapour Deposition (AREA)
JP2022555910A 2021-09-19 2022-09-14 水晶デバイスの製造法 Active JP7433592B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021152722 2021-09-19
JP2021152722 2021-09-19
PCT/JP2022/034326 WO2023042834A1 (ja) 2021-09-19 2022-09-14 水晶デバイスの製造法

Publications (2)

Publication Number Publication Date
JPWO2023042834A1 JPWO2023042834A1 (https=) 2023-03-23
JP7433592B2 true JP7433592B2 (ja) 2024-02-20

Family

ID=85602864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022555910A Active JP7433592B2 (ja) 2021-09-19 2022-09-14 水晶デバイスの製造法

Country Status (4)

Country Link
JP (1) JP7433592B2 (https=)
CN (1) CN117941252A (https=)
TW (1) TW202315179A (https=)
WO (1) WO2023042834A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136575A (ja) 2003-10-29 2005-05-26 Seiko Epson Corp 圧電振動片とその励振電極の構造および電極形成方法ならびに、圧電デバイスと圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器
JP2013236290A (ja) 2012-05-10 2013-11-21 Nippon Dempa Kogyo Co Ltd 水晶振動片、水晶デバイス、及び水晶振動片の製造方法
WO2015004755A1 (ja) 2013-07-10 2015-01-15 株式会社シンクロン 光学式膜厚計，薄膜形成装置及び膜厚測定方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637522U (https=) * 1979-08-28 1981-04-09
JP6787467B2 (ja) * 2019-11-15 2020-11-18 セイコーエプソン株式会社 振動素子、振動子、電子デバイス、電子機器、移動体および振動素子の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136575A (ja) 2003-10-29 2005-05-26 Seiko Epson Corp 圧電振動片とその励振電極の構造および電極形成方法ならびに、圧電デバイスと圧電デバイスを利用した携帯電話装置および圧電デバイスを利用した電子機器
JP2013236290A (ja) 2012-05-10 2013-11-21 Nippon Dempa Kogyo Co Ltd 水晶振動片、水晶デバイス、及び水晶振動片の製造方法
WO2015004755A1 (ja) 2013-07-10 2015-01-15 株式会社シンクロン 光学式膜厚計，薄膜形成装置及び膜厚測定方法

Also Published As

Publication number Publication date
CN117941252A (zh) 2024-04-26
TW202315179A (zh) 2023-04-01
JPWO2023042834A1 (https=) 2023-03-23
WO2023042834A1 (ja) 2023-03-23

Similar Documents

Publication Publication Date Title
JP2011527384A (ja) 第１の相および第２の相を含む酸化物スパッタターゲットの製造方法
JPWO2005020655A1 (ja) 電磁波遮蔽積層体およびこれを用いたディスプレイ装置
JP5799154B2 (ja) スパッタリングターゲット及びその製造方法
CN210837765U (zh) 一种半导体器件结构及电子产品
CN103715171B (zh) 导电金属互联线及其制备方法
JP7433592B2 (ja) 水晶デバイスの製造法
CN109526193B (zh) 电磁波屏蔽膜及其制备方法
JPH0249215A (ja) 磁気記録媒体
JP2006052461A (ja) マグネトロンスパッタリング装置、円筒陰極、及び薄い複合膜を基板上に成膜する方法
TWI576454B (zh) Spraying target for forming wiring film and coating layer for electronic parts
JP2017066519A (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
CN102967992B (zh) 一种掩膜板及其制造方法、一种阵列基板的制造方法
JP6037208B2 (ja) 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP2006119564A5 (https=)
JP2018538571A5 (https=)
CN103255313A (zh) 轧制铜箔
JP2021192402A5 (https=)
CN100539412C (zh) 压电晶体振荡元件及其使用的电极
JP2004221416A (ja) 半導体装置の製造方法及びその半導体装置
CN104716202A (zh) 薄膜晶体管及其制作方法、阵列基板、显示装置
JP5327651B2 (ja) 電子部品用薄膜配線および薄膜配線形成用スパッタリングターゲット材
CN113036034A (zh) 可调控Co2FeX合金垂直磁各向异性的磁性薄膜材料及方法
JP6114414B2 (ja) Ｎｉメッキ処理に用いられる下地層被覆基板、Ｎｉメッキ層含有積層体および磁気記録媒体
JP2012149310A (ja) バイアススパッタリング方法及び弾性波装置の製造方法
CN101179080A (zh) 薄膜晶体管基板

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221113

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240118

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240119

R150 Certificate of patent or registration of utility model

Ref document number: 7433592

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150