WO2023029326A1 - 用于射频mos器件建模的测试系统和建模方法 - Google Patents

用于射频mos器件建模的测试系统和建模方法 Download PDF

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WO2023029326A1
WO2023029326A1 PCT/CN2021/143035 CN2021143035W WO2023029326A1 WO 2023029326 A1 WO2023029326 A1 WO 2023029326A1 CN 2021143035 W CN2021143035 W CN 2021143035W WO 2023029326 A1 WO2023029326 A1 WO 2023029326A1
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parasitic
test
test structure
drain
source
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PCT/CN2021/143035
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French (fr)
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刘林林
冯悦怡
王全
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上海集成电路研发中心有限公司
上海集成电路装备材料产业创新中心有限公司
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Publication of WO2023029326A1 publication Critical patent/WO2023029326A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods

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  • the invention relates to the technical field of MOS device testing and modeling, in particular to a testing system and a modeling method for modeling radio frequency MOS devices.
  • MOS Metal-Oxide-Semiconductor
  • a typical test system uses a two-port structure connection test, that is, the gate (Gate) and the drain (Drain) of the RF MOS device As the two test terminals of the two-port structure, the source (Source) is shorted to the substrate (Bulk) and grounded.
  • This method can effectively extract the parameters of the device model, but due to the short circuit between the source and the substrate, the parasitic capacitance between the source and the substrate is ignored, and the parasitic capacitance between the gate and the substrate and the drain and the substrate cannot be accurately characterized. Therefore, it is particularly necessary to further optimize the test system of RF MOS devices and improve the model accuracy of RF MOS devices.
  • the invention provides a test system and a modeling method for radio frequency MOS devices, so as to improve the accuracy of radio frequency MOS device models.
  • the present invention provides a test system for modeling radio frequency MOS devices.
  • the test system includes a master test structure and a slave test structure, and both the master test structure and the slave test structure adopt a two-port test connection; wherein, the master test structure includes a first MOS device, and the first MOS device The gate and drain of the main test structure are respectively connected to the corresponding test port of the main test structure, and the source and the substrate are short-circuited and grounded; the slave test structure includes a second MOS device, and the source and drain of the second MOS device The poles are respectively connected to the corresponding test ports of the slave test structure, the gate is separately connected to facilitate setting a corresponding bias voltage, and the substrate of the second MOS device is grounded.
  • the test system further includes a first de-embedding structure and a second de-embedding structure, the first de-embedding structure corresponds to the main test structure, and the second de-embedding structure corresponds to the slave test structure.
  • both the first de-embedding structure and the second de-embedding structure include an open circuit test substructure and a short circuit test substructure.
  • Another aspect of the present invention provides a modeling method of a radio frequency MOS device, the modeling method includes: providing the above-mentioned test system, and constructing a model circuit, the model circuit includes an intrinsic MOS device and a plurality of parasitic elements,
  • the intrinsic MOS device has four electrodes of a source, a drain, a gate and a substrate, and the plurality of parasitic elements include a plurality of parasitic capacitances;
  • the main test structure and the slave test structure are respectively tested and Perform de-embedding processing to obtain de-embedded S parameters and current and voltage data corresponding to the main test structure, and de-embedded S parameters corresponding to the slave test structure; set the initial value of each parasitic element ; using the de-embedded S parameters corresponding to the slave test structure to correct at least some initial values of the plurality of parasitic elements; and setting a plurality of parasitic parameter values corresponding to the plurality of parasitic elements.
  • the test system further includes a first de-embedding structure and a second de-embedding structure, the first de-embedding structure corresponds to the main test structure, and the second de-embedding structure corresponds to the slave test structure;
  • the step of testing and de-embedding the master test structure and the slave test structure specifically includes: respectively testing the master test structure, the slave test structure, the first de-embedding structure and the second de-embedding
  • the embedding structure carries out the S parameter test, and obtains the corresponding S parameter respectively; Based on the S parameter of the first de-embedding structure, the S parameter of the main test structure is processed, and the S parameter after the de-embedding of the main test structure is obtained ; Based on the S parameters of the second de-embedded structure, process the S parameters of the secondary test structure to obtain the de-embedded S parameters of the secondary test structure.
  • the method for setting the initial value of each parasitic element includes: based on the layout of the RF MOS device to be modeled, respectively constructing the extracted layout structure of each parasitic capacitance; Corresponding to the extracted layout structure, the initial values of the parasitic capacitances are respectively extracted.
  • the multiple parasitic capacitances include a gate lining parasitic capacitance Cgb formed between the gate and the substrate, a source lining parasitic capacitance Csb formed between the source and the substrate, and A drain liner parasitic capacitance Cdb formed between the drain and the substrate.
  • the method for respectively constructing the extracted layout structure of each parasitic capacitance includes: based on the layout of the radio frequency MOS device, only the connection path of the gate and the connection path of the substrate are reserved, and the parasitic capacitance Cgb of the gate lining is obtained.
  • the extracted layout structure, only the connection path of the source electrode and the connection path of the substrate are reserved, and the extracted layout structure of the source-substrate parasitic capacitance Csb is obtained, and only the connection path of the drain electrode and the connection path of the substrate are reserved, and the described The extraction layout structure of the drain liner parasitic capacitance Cdb.
  • the plurality of parasitic elements further include drain-line parasitic resistance Rdb, source-line parasitic resistance Rsb, substrate-side parasitic resistance Rb, drain-side parasitic resistance Rd, source-side parasitic resistance Rs, gate-side parasitic resistance Rg, gate Drain parasitic capacitance Cgd, gate-source parasitic capacitance Cgs, drain-source parasitic capacitance Cds, drain parasitic diode DD and source parasitic diode DS.
  • the step of setting the initial value of each parasitic element further includes: substituting the initial values of the gate lining parasitic capacitance Cgb, the source lining parasitic capacitance Csb and the drain lining parasitic capacitance Cdb into the model circuit, and, by fitting the current and voltage data of the main test structure, determine the initial values of the drain terminal parasitic resistance Rd and the source terminal parasitic resistance Rs; convert the S parameter after de-embedding the main test structure De-embedded Y parameters and Z parameters for the main test structure; and by fitting different components of the de-embedded Y parameters and the Z parameters of the main test structure, obtaining the drain liner parasitic resistance Rdb, the Initial values of the source-substrate parasitic resistance Rsb, the substrate-side parasitic resistance Rb, the gate-side parasitic resistance Rg, the gate-drain parasitic capacitance Cgd, the gate-source parasitic capacitance Cgs, and the drain-source parasitic capacitance Cds .
  • the step of correcting at least part of the initial values of the plurality of parasitic elements by using the de-embedded S parameters of the slave test structure includes: for the slave test structure, obtaining the source and the drain at zero S-parameters after offset de-embedding; converting said zero-bias de-embedded S-parameters into said Y-parameters and Z-parameters after de-embedding from test structure; and, by fitting said de-embedded from test structure
  • the initial values of at least some of the plurality of parasitic elements are corrected according to different components of the subsequent Y parameter and Z parameter.
  • the step of correcting at least part of the initial values of the plurality of parasitic elements by using the S parameters de-embedded from the test structure includes: repeatedly fitting the Y parameters de-embedded from the test structure and different components of the Z parameter to iteratively correct at least some of the initial values of the plurality of parasitic elements until convergence.
  • the modeling method further includes: iteratively performing the step of setting the initial values of the multiple parasitic elements to the step of setting the multiple parasitic parameter values, and Perform a simulation test on the model circuit by using the multiple parasitic parameter values until the fitting error between the simulation result of the model circuit and the test data of the main test structure is within a corresponding setting range, and is consistent with the above-mentioned The fitting error of the test data from the test structure is also within the corresponding set range.
  • the radio frequency MOS device modeling test system of the present invention uses the main test structure and the slave test structure to model the radio frequency MOS device, which can improve the accuracy and application range of the radio frequency MOS device model.
  • the modeling method of the radio frequency MOS device of the present invention can correct the initial value of the parasitic element, helps to improve the accuracy of the parasitic parameter value of the parasitic element, and improves the accuracy and application range of the radio frequency MOS device model.
  • FIG. 1 is a schematic diagram of a layout structure of a conventional MOS device.
  • FIG. 2 is a schematic diagram of a model circuit of an existing radio frequency MOS device.
  • FIG. 3 is a schematic diagram of a main test structure in a test system according to an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of a slave test structure of a test system according to an embodiment of the present invention.
  • FIG. 5 is a flowchart of a modeling method for a radio frequency MOS device according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of a model circuit of a radio frequency MOS device according to an embodiment of the present invention.
  • FIG. 7 is a schematic diagram of an extraction layout structure of a gate-substrate parasitic capacitance Cgb according to an embodiment of the present invention.
  • FIG. 8 is a circuit diagram of an extraction layout structure of the gate-substrate parasitic capacitance Cgb according to an embodiment of the present invention.
  • FIG. 9 is a schematic diagram of an extraction layout structure of the drain pad parasitic capacitance Cdb and the source pad parasitic capacitance Csb according to an embodiment of the present invention.
  • FIG. 10 is a circuit diagram of the extracted layout structure of the drain pad parasitic capacitance Cdb and the source pad parasitic capacitance Csb according to an embodiment of the present invention.
  • the test system includes a master test structure and a slave test structure, and both the master test structure and the slave test structure adopt a two-port test connection.
  • FIG. 3 is a schematic diagram of a main test structure in a test system according to an embodiment of the present invention.
  • the main test structure has two corresponding test ports, and includes a first MOS device (referred to as DUT1), the gate (G) and drain (D) of the first MOS device are respectively Connect the corresponding test port, the source (S) of the first MOS device and the substrate (B) are short-circuited and grounded.
  • FIG. 4 is a schematic diagram of a slave test structure of a test system according to an embodiment of the present invention.
  • the described slave test structure has two corresponding test ports, and includes a second MOS device (marked as DUT2), and the source (S) and drain (D) of the second MOS device are respectively The corresponding test port is connected, the gate G of the second MOS device is separately connected to facilitate setting a corresponding bias voltage, and the substrate (B) of the second MOS device is grounded.
  • the main test structure is used to test and obtain current and voltage data and corresponding S parameters in the operating frequency range
  • the slave test structure is used to test and obtain corresponding S parameters in the operating frequency range
  • the current and voltage data includes RF MOS Output characteristic data and/or transfer characteristic data of the device under different gate-source bias voltages.
  • the layout and size of the first MOS device and the second MOS device are the same as those of the radio frequency MOS device to be modeled.
  • the test system may also include a first de-embedding structure and a second de-embedding structure.
  • the first de-embedding structure corresponds to the main test structure
  • the second de-embedding structure corresponds to the slave test structure
  • both the first de-embedding structure and the second de-embedding structure may include an open circuit test substructure (Open structure) And the short circuit test substructure (short structure).
  • the S parameters of the main test structure are de-embedded using the S parameters of the first de-embedding structure to obtain the de-embedded S parameters of the main test structure; and using the second The de-embedding structure performs de-embedding processing on the S-parameters of the sub-test structure to obtain the de-embedded S-parameters of the sub-test structure.
  • the slave test structure adopts different electrode settings from the main test structure (that is, the connection mode of the electrodes is different), wherein, the source (S) and drain (D) of the second MOS device are respectively connected to the slave The test port of the test structure, the gate (G) of the second MOS device is connected separately so as to set the corresponding bias voltage, the substrate (B) of the second MOS device is grounded, that is, due to the second The source and the substrate of the MOS device are not short-circuited, and the gate is connected separately, so the S parameter of the slave test structure can represent the parasitic capacitance (such as the parasitic capacitance Cgb of the gate lining, the parasitic capacitance of the source lining) that the main test structure ignores. Capacitance Csb and drain lining parasitic capacitance Cdb).
  • the parasitic capacitance such as the parasitic capacitance Cgb of the gate lining, the parasitic capacitance of the source lining
  • FIG. 5 is a flowchart of a modeling method for a radio frequency MOS device according to an embodiment of the present invention. As shown in Figure 5, the modeling method of described RF MOS device comprises:
  • S1 Provide a test system for RF MOS device modeling, and build a model circuit.
  • test system of this embodiment is the same as that of the first embodiment.
  • the main test structure includes a first MOS device (referred to as DUT1), and the gate (G) and drain (D) of the first MOS device are respectively connected to the main test structure Corresponding test ports, source (S) and substrate (B) are shorted and grounded.
  • the model circuit includes a plurality of parasitic elements, the plurality of parasitic elements include a plurality of parasitic capacitances, and the plurality of parasitic capacitances include a gate liner formed between the gate and the substrate A parasitic capacitance Cgb, a source-line parasitic capacitance Csb formed between the source and the substrate, and a drain-line parasitic capacitance Cdb formed between the drain and the substrate.
  • the test system is additionally provided with a slave test structure.
  • the described slave test structure includes a second MOS device (referred to as DUT2), the electrode connection mode of the second MOS device is different from that of the first MOS device, and the source and drain of the second MOS device
  • DUT2 second MOS device
  • the poles are respectively connected to the test port corresponding to the slave test structure, the grid is connected separately (that is, not shorted to any one of the source, the drain, and the substrate) so as to set the corresponding bias voltage, and the substrate is grounded, so that
  • the S-parameters of the slave test structure can be obtained to characterize the parasitic capacitances mentioned above.
  • the parasitic capacitances are added to the calculation of the model circuit to improve the accuracy of the radio frequency MOS model.
  • the test system may further include a first de-embedding structure and a second de-embedding structure, the first de-embedding structure corresponds to the main test structure, and the second de-embedding structure corresponds to the slave test structure.
  • S1 also includes constructing a model circuit, the model circuit includes an intrinsic MOS device and a plurality of parasitic elements, and the intrinsic MOS device has four electrodes of a source, a drain, a gate and a substrate, so The plurality of parasitic elements include the above parasitic capacitances.
  • the layout and size of the intrinsic MOS device, the first MOS device and the second MOS device are the same as those of the radio frequency MOS device to be modeled.
  • FIG. 6 is a schematic diagram of a model circuit of a radio frequency MOS device according to an embodiment of the present invention. As shown in FIG. 6 , on the basis of the model circuit constructed by S1 , this embodiment includes at least various parasitic capacitances in addition to the various parasitic elements shown in FIG. 2 .
  • the intrinsic MOS device has four electrodes of source (Si), drain (Di), gate (Gi), and substrate (Bi).
  • One end of the gate-drain parasitic capacitance Cgd, one end of the drain-source parasitic capacitance Cds, and one end of the drain parasitic diode DD are all connected to the node M; one end of the gate-source parasitic capacitance Cgs, the other end of the drain-source parasitic capacitance Cds, and the source parasitic diode DS
  • One end of the substrate-side parasitic resistance Rb, one end of the drain-line parasitic resistance Rdb, one end of the source-line parasitic resistance Rsb are all connected to the node P; the other end of the gate-drain parasitic capacitance Cgd, the gate-source parasitic capacitance Cgs
  • the other ends of the drain parasitic diode DD are connected to the other end of the drain parasitic resistance Rdb,
  • the model circuit is also provided with a drain port (D), a substrate port (B), a source port (S) and a gate port (G); one end of the parasitic resistance Rd at the drain end is connected to the node M, and the other end is connected to The drain port is connected; one end of the parasitic resistance Rd at the drain end is connected to the node P, and the other end is connected to the substrate port; one end of the parasitic resistance Rg at the gate end is connected to the node Q, and the other end is connected to the gate port; the substrate parasitic resistance Rb One end of Csb is connected to the node N, and the other end is connected to the source port; the two ends of the drain lining parasitic capacitance Cdb are respectively connected to the drain port and the substrate port; the two ends of the source lining parasitic capacitance Csb are respectively connected to the substrate port and the source terminal
  • the port S is connected; the gate lining parasitic capacitance Cgb is connected to the gate port and the substrate port respectively.
  • the working frequency range of the first MOS device and the second MOS device may be 0G ⁇ 100G.
  • the operating frequency range of the intrinsic MOS device, the first MOS device and the second MOS device is the same as that of the MOS device to be modeled.
  • the test frequency range may be within the operating frequency range.
  • existing technologies may be used to perform S-parameter tests on each test structure in the test system, so as to obtain the S-parameters corresponding to each test structure and the current and voltage data of the main test structure.
  • S2 may specifically include: first, performing an S parameter test on the main test structure, the slave test structure, the first de-embedding structure, and the second de-embedding structure to obtain corresponding S parameters; based on the The S parameter of the first de-embedding structure, the S parameter of the main test structure is processed (computing), and the S parameter after the de-embedding of the main test structure is obtained; and the S parameter based on the second de-embedding structure , processing (operating) the S parameters of the secondary test structure to obtain the de-embedded S parameters of the secondary test structure.
  • Using the de-embedded S-parameters of the main test structure and the slave test structure to model the RF MOS device is helpful to improve the accuracy of the RF MOS device model.
  • both the first de-embedding structure and the second de-embedding structure may include an open circuit test substructure (ie, an Open structure) and a short circuit test substructure (ie, a short structure).
  • an open circuit test substructure ie, an Open structure
  • a short circuit test substructure ie, a short structure.
  • the de-embedding method is to de-embed the main test structure to obtain the S parameters after the de-embedding of the main test structure; then, respectively from the test structure and its corresponding open circuit test substructure c and short circuit test substructure d. Carrying out the S parameter test, and obtaining the corresponding S parameter; then, according to the open-short de-embedding method, de-embedding the secondary test structure to obtain the de-embedded S parameter of the secondary test structure.
  • the first sub-step is to determine the model and size parameters of the intrinsic MOS device, the drain parasitic diode DD and the source parasitic diode DS corresponding to the model circuit.
  • the corresponding models of the intrinsic MOS device, the drain parasitic diode DD and the source parasitic diode DS are selected;
  • the layout size of the source and drain regions determines the size parameters of the intrinsic MOS device, the drain parasitic diode DD and the source parasitic diode DS.
  • FIG. 7 the extraction layout structure of the parasitic capacitance Cgb of the gate substrate is shown in FIG. 7 .
  • the circuit for extracting the layout structure of the parasitic capacitance Cgb of the gate lining is shown in FIG. 8 .
  • Figure 7 and Figure 8 based on the layout of the radio frequency MOS device, only the connection path of the gate (G) and the connection path of the substrate (B) can be reserved to obtain the extraction layout of the gate liner parasitic capacitance Cgb structure.
  • the extraction layout structure of the drain-lined parasitic capacitance Cdb and the source-lined parasitic capacitance Csb is shown in FIG. 9 .
  • the circuit of the extraction layout structure of the drain pad parasitic capacitance Cdb and the source pad parasitic capacitance Csb is shown in FIG. 10 .
  • connection path of the source (S) and the connection path of the substrate (B) can be reserved to obtain the extraction layout of the source-substrate parasitic capacitance Csb structure, and only the connection path of the drain (D) and the connection path of the substrate (B) are reserved, so as to obtain the extraction layout structure of the parasitic capacitance Cdb of the drain liner.
  • the initial values of each parasitic capacitance are respectively extracted by using conventional back-track parasitic extraction tools in the field, and the back-track parasitic extraction tools are not limited here.
  • the initial values of the parasitic capacitances are substituted into the model circuit constructed in step S1.
  • the initial values of the drain terminal parasitic resistance Rd and the source terminal parasitic resistance Rs are determined; the main The S parameter after the test structure is de-embedded is converted into the Y parameter and the Z parameter after the main test structure is de-embedded, and the different components of the Y parameter and the Z parameter after the de-embedding of the main test structure are fitted to obtain the leakage liner parasitic resistance Rdb, the parasitic resistance Rsb of the source substrate, the parasitic resistance Rb of the substrate side, the parasitic resistance Rg of the gate side, and the initial value of each parasitic capacitance.
  • the S parameters after de-embedding of the main test structure can be converted into Y parameters and Z parameters after de-embedding of the main test structure, by (For example, the test frequency range is the operating frequency range of the radio frequency MOS device to be modeled), fitting the imaginary part of the component Y11, Y21, Y22 of the Y parameter after the de-embedding of the main test structure can determine the initial value of each parasitic capacitance value, fitting the real part of the Y parameter and Z parameter components Y11 and Z11 of the main test structure after de-embedding in the test frequency range, can determine the initial value of the parasitic resistance Rg of the gate terminal, by fitting the de-embedding of the main test structure
  • the real part of the components Y22 and Z22 of the Y parameter and the Z parameter can determine the initial values of the substrate end parasitic resistance Rb, the source lining parasitic resistance Rsb and the drain lining parasitic resistance Rdb; here, the S parameter (scatter
  • the third sub-step may also include: repeatedly fitting the de-embedded Y parameters and Z parameters of the main test structure, and iteratively correcting the gate-source parasitic capacitance Cgs, the gate-drain parasitic capacitance Cgd, and the gate-liner parasitic capacitance Cgb , the initial value of the parasitic capacitance Cdb of the drain lining, the parasitic resistance of the gate terminal Rg, the parasitic resistance of the drain terminal Rd, the parasitic resistance of the source terminal Rs, the parasitic resistance of the substrate terminal Rb and the initial value of the parasitic resistance of the drain lining Rdb until convergence, which helps to improve the obtained RF Accuracy of MOS device models.
  • S4 specifically includes: first, for the slave test structure, obtain the S parameters of the source and drain corresponding to the slave test structure after de-embedding at zero bias; then, under zero bias, de-embed the slave test structure
  • the S-parameters of the test structure are converted into Y parameters and Z parameters after de-embedding from the test structure, and by fitting different components of the Y parameters and Z parameters after de-embedding from the test structure, for at least one of the plurality of parasitic elements Some initial values are corrected.
  • the initial value of each parasitic capacitance is corrected; based on the components Y11, Y21 and Y22 of the Y parameter after de-embedding from the test structure, And the real part of the components Z11 and Z22 of the Z parameter after de-embedding, correct the initial value of the parasitic resistance Rdb of the drain lining, the parasitic resistance Rsb of the source lining, the parasitic resistance Rb of the substrate side, the parasitic resistance Rs of the source side, and the parasitic resistance Rd of the drain side ;
  • the S parameter, Y parameter and Z parameter are all matrix parameters
  • Y11 is the value in the first row and first column corresponding to the Y parameter matrix after de-embedding from the test structure
  • Y21 is the Y parameter after de-embedding from the test structure The value in the first column of the second row
  • S4 may further include: iteratively correcting at least part of the initial values of the multiple parasitic elements by repeatedly fitting different components of the Y parameter and Z parameter de-embedded from the test structure until convergence.
  • step S5 Setting multiple parasitic parameter values corresponding to the multiple parasitic elements.
  • step S5 of this embodiment is: obtaining or determining the parasitic parameter values of each parasitic element in the model circuit constructed in step S1.
  • the modeling method of this embodiment may further include: iteratively performing the step of setting the initial values of the multiple parasitic elements (ie S3) to setting the multiple The step of a parasitic parameter value (i.e., iteratively carrying out S3 to S5), and using the multiple parasitic parameter values to carry out a simulation test on the model circuit built by S1, until the simulation result of the model circuit is consistent with the main test structure
  • the fitting error of the test data is within a corresponding setting range, and the fitting error with the test data of the slave test structure is also within a corresponding setting range.
  • the radio frequency MOS device model after determining multiple parasitic parameter values corresponding to multiple parasitic elements in the model circuit constructed in step S1, the radio frequency MOS device model can be obtained.
  • the test system of this embodiment can also correct the initial value of the parasitic element in the model circuit by using the S parameter of the test structure, which helps to improve the accuracy of the parameter value of the parasitic element and improve the obtained radio frequency.
  • the accuracy and applicability of the MOS device model can also correct the initial value of the parasitic element in the model circuit by using the S parameter of the test structure, which helps to improve the accuracy of the parameter value of the parasitic element and improve the obtained radio frequency.

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Abstract

本发明提供一种用于射频MOS器件建模的测试系统和建模方法。该测试系统的从测试结构及主测试结构对应设置的电极不同，其中，第二MOS器件的源极和漏极分别连接对应的测试端口，而栅极单独接出以便于设置相应的偏压。所述建模方法通过上述测试系统的测试结果，设置模型电路中每个寄生元件的初始值，并对至少部分寄生元件的初始值进行修正，最后得到各个寄生元件的寄生参数值。

Description

用于射频MOS器件建模的测试系统和建模方法
交叉引用
本申请要求2021年9月6日提交的申请号为202111040191.0的中国专利申请的优先权。上述申请的内容以引用方式被包含于此。
技术领域
本发明涉及MOS器件测试及建模技术领域，特别涉及一种用于射频MOS器件建模的测试系统和建模方法。
技术背景
随着晶体管的特征尺寸不断缩小，MOS(Metal-Oxide-Semiconductor)器件的特征频率(ft)及最大振荡频率(fmax)不断提高，射频MOS器件开始应用于毫米波及太赫兹频段等高频领域，需要获得准确的射频MOS器件模型进行产品开发。
目前，在毫米波等高频领域，射频MOS器件模型对寄生元素的建模不准确，典型的测试系统采用二端口结构连接测试，即将射频MOS器件的栅极(Gate)与漏极(Drain)作为二端口结构的两个测试端，源极(Source)与衬底(Bulk)短接且接地。该方法可以有效抽取器件模型的参数，但由于源极与衬底短接，使源极与衬底之间的寄生电容被忽略，栅极与衬底以及漏极与衬底之间的寄生电容也无法准确表征。因此，进一步优化射频MOS器件的测试系统，提高射频MOS器件的模型准确度尤为必要。
发明概要
本发明提供一种用于射频MOS器件的测试系统和建模方法，以提高射频MOS器件模型的准确度。
为了实现上述目的，本发明提供一种用于射频MOS器件建模的测试系统。 所述测试系统包括主测试结构和从测试结构，所述主测试结构和所述从测试结构均采用二端口测试连接；其中，所述主测试结构包括第一MOS器件，所述第一MOS器件的栅极和漏极分别连接所述主测试结构对应的测试端口，源极和衬底短接且接地；所述从测试结构包括第二MOS器件，所述第二MOS器件的源极和漏极分别连接所述从测试结构对应的测试端口，栅极单独接出以便于设置相应的偏压，所述第二MOS器件的衬底接地。
可选的，所述测试系统还包括第一去嵌结构以及第二去嵌结构，第一去嵌结构对应所述主测试结构，第二去嵌结构对应所述从测试结构。
可选的，所述第一去嵌结构和所述第二去嵌结构均包括开路测试子结构和短路测试子结构。
本发明的另一方面提供一种射频MOS器件的建模方法，所述建模方法包括：提供上述的测试系统，并构建模型电路，所述模型电路包括本征MOS器件和多个寄生元件，所述本征MOS器件具有源极、漏极、栅极和衬底四个电极，所述多个寄生元件包括多个寄生电容；分别对所述主测试结构和所述从测试结构进行测试并作去嵌处理，以获得所述主测试结构对应的去嵌后的S参数和电流电压数据，以及所述从测试结构对应的去嵌后的S参数；设置每个所述寄生元件的初始值；利用所述从测试结构对应的去嵌后的S参数对所述多个寄生元件中至少部分的初始值进行修正；以及设置所述多个寄生元件对应的多个寄生参数值。
可选的，所述测试系统还包括第一去嵌结构以及第二去嵌结构，第一去嵌结构对应所述主测试结构，第二去嵌结构对应所述从测试结构；其中，分别对所述主测试结构和所述从测试结构进行测试并作去嵌处理的步骤具体 包括：分别对所述主测试结构、所述从测试结构、所述第一去嵌结构和所述第二去嵌结构进行S参数测试，并获得各自对应的S参数；基于所述第一去嵌结构的S参数对所述主测试结构的S参数进行处理，获得所述主测试结构去嵌后的S参数；基于所述第二去嵌结构的S参数，对所述从测试结构的S参数进行处理，获得所述从测试结构去嵌后的S参数。
可选的，设置每个所述寄生元件的初始值的方法包括：基于要建模的射频MOS器件的版图，分别构建所述各寄生电容的抽取版图结构；以及利用后道寄生抽取工具，基于对应的所述抽取版图结构，分别抽取获得所述各寄生电容的初始值。
可选的，所述多个寄生电容包括所述栅极和所述衬底之间形成的栅衬寄生电容Cgb、所述源极和所述衬底之间形成的源衬寄生电容Csb、及所述漏极和所述衬底之间形成的漏衬寄生电容Cdb。
可选的，分别构建所述各寄生电容的抽取版图结构的方法包括：基于所述射频MOS器件的版图，仅保留栅极的连接通路及衬底的连接通路，得到所述栅衬寄生电容Cgb的抽取版图结构，仅保留源极的连接通路及衬底的连接通路，得到所述源衬寄生电容Csb的抽取版图结构，及仅保留漏极的连接通路及衬底的连接通路，得到所述漏衬寄生电容Cdb的抽取版图结构。
可选的，所述多个寄生元件还包括漏衬寄生电阻Rdb、源衬寄生电阻Rsb、衬底端寄生电阻Rb、漏极端寄生电阻Rd、源极端寄生电阻Rs、栅极端寄生电阻Rg、栅漏寄生电容Cgd、栅源寄生电容Cgs、漏源寄生电容Cds、漏极寄生二极管DD和源极寄生二极管DS。
可选的，设置每个所述寄生元件的初始值的步骤还包括：将所述栅衬寄 生电容Cgb、所述源衬寄生电容Csb和所述漏衬寄生电容Cdb的初始值代入所述模型电路，并且，通过拟合所述主测试结构的电流电压数据，确定所述漏极端寄生电阻Rd和所述源极端寄生电阻Rs的初始值；将所述主测试结构去嵌后的S参数转换为所述主测试结构去嵌后的Y参数和Z参数；以及通过拟合所述主测试结构去嵌后的Y参数和所述Z参数的不同分量，获得所述漏衬寄生电阻Rdb、所述源衬寄生电阻Rsb、所述衬底端寄生电阻Rb、所述栅极端寄生电阻Rg、所述栅漏寄生电容Cgd、所述栅源寄生电容Cgs和所述漏源寄生电容Cds的初始值。
可选的，利用所述从测试结构去嵌后的S参数对所述多个寄生元件中至少部分的初始值进行修正的步骤包括：针对所述从测试结构，获取源极和漏极在零偏置下去嵌后的S参数；将所述零偏置下去嵌后的S参数转换为所述从测试结构去嵌后的Y参数和Z参数；以及，通过拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，对所述多个寄生元件中至少部分的初始值进行修正。
可选的，利用所述从测试结构去嵌后的S参数对所述多个寄生元件中至少部分的初始值进行修正的步骤包括：通过重复拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，以对所述多个寄生元件中至少部分的初始值进行迭代修正直至收敛。
可选的，在得到所述多个寄生参数值后，所述建模方法还包括：迭代进行设置所述多个寄生元件的初始值的步骤至设置所述多个寄生参数值的步骤，并利用所述多个寄生参数值对所述模型电路进行仿真测试，直至所述模型电路的仿真结果与所述主测试结构的测试数据的拟合误差处于相应的设 定范围内，且与所述从测试结构的测试数据的拟合误差也处于相应的设定范围内。
本发明的射频MOS器件建模的测试系统，利用主测试结构和从测试结构共同来对射频MOS器件进行建模，可以提高射频MOS器件模型的精度和适用范围。
本发明的射频MOS器件的建模方法，可以对寄生元件的初始值进行修正，有助于提高寄生元件的寄生参数值的准确度，提高射频MOS器件模型的精度和适用范围。
附图说明
图1为现有的一种MOS器件的版图结构示意图。
图2为现有的一种射频MOS器件的模型电路示意图。
图3为本发明一实施例的测试系统中主测试结构的示意图。
图4为本发明一实施例的测试系统的从测试结构的示意图。
图5为本发明一实施例的射频MOS器件的建模方法的流程图。
图6为本发明一实施例的射频MOS器件的模型电路示意图。
图7为本发明一实施例的栅衬寄生电容Cgb的抽取版图结构示意图。
图8为本发明一实施例的栅衬寄生电容Cgb的抽取版图结构的电路图。
图9为本发明一实施例的漏衬寄生电容Cdb和源衬寄生电容Csb的抽取版图结构示意图。
图10为本发明一实施例的漏衬寄生电容Cdb和源衬寄生电容Csb的抽取版图结构的电路图。
发明内容
以下结合附图和具体实施例对本发明提出的用于射频MOS器件建模的测试系统和射频MOS器件的建模方法作进一步详细说明。根据下面说明，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
实施例一
本实施例提供一种用于射频MOS器件建模的测试系统，所述测试系统包括主测试结构和从测试结构，所述主测试结构和所述从测试结构均采用二端口测试连接。
图3为本发明一实施例的测试系统中主测试结构的示意图。如图3所示，所述主测试结构具有对应的两个测试端口，并包括第一MOS器件(记为DUT1)，所述第一MOS器件的栅极(G)和漏极(D)分别连接对应的测试端口，所述第一MOS器件的源极(S)和衬底(B)短接且接地。
图4为本发明一实施例的测试系统的从测试结构的示意图。如图4所示，所述从测试结构具有对应的两个测试端口，并包括第二MOS器件(记为DUT2)，所述第二MOS器件的源极(S)和漏极(D)分别连接对应的测试端口，所述第二MOS器件的栅极G单独接出以便于设置相应的偏压，所述第二MOS器件的衬底(B)接地。
其中，所述主测试结构用于测试获取电流电压数据和工作频率范围内对应的S参数，所述从测试结构用于测试获取工作频率范围内对应的S参数，所述电流电压数据包括射频MOS器件在不同栅源偏压下的输出特性数据和/或转移特性数据。
所述第一MOS器件和所述第二MOS器件的版图和尺寸均与要建模的射频MOS器件相同。
所述测试系统还可以包括第一去嵌结构以及第二去嵌结构。所述第一去嵌结构对应所述主测试结构，所述第二去嵌结构对应所述从测试结构，第一 去嵌结构以及第二去嵌结构均可以包括开路测试子结构(Open结构)和短路测试子结构(short结构)。本实施例中，利用所述第一去嵌结构的S参数对所述主测试结构的S参数作去嵌处理，以获得所述主测试结构去嵌后的S参数；并利用所述第二去嵌结构对所述从测试结构的S参数作去嵌处理，以获得所述从测试结构去嵌后的S参数。
本实施例中，从测试结构采用与主测试结构不同的电极设置(即电极的连接方式不同)，其中，第二MOS器件的源极(S)和漏极(D)分别对应连接所述从测试结构的测试端口，所述第二MOS器件的栅极(G)单独接出以便于设置相应的偏压，所述第二MOS器件的衬底(B)接地，即，由于所述第二MOS器件的源极和衬底没有短接，且栅极单独接出，因此所述从测试结构的S参数可以表征所述主测试结构忽略的寄生电容(例如栅衬寄生电容Cgb、源衬寄生电容Csb和漏衬寄生电容Cdb)。
实施例二
现有技术采用源极与衬底短接，源极与衬底之间的寄生电容被忽略，栅极与衬底、以及漏极与衬底之间的寄生电容也无法准确表征，影响其他寄生电容和寄生电阻的数值准确性。
图5为本发明一实施例的射频MOS器件的建模方法的流程图。如图5所示，所述射频MOS器件的建模方法包括：
S1：提供用于射频MOS器件建模的测试系统，并构建模型电路。
本实施例的测试系统与实施例一的测试系统相同。
具体的，如图3所示，所述主测试结构包括第一MOS器件(记为DUT1)，所述第一MOS器件的栅极(G)和漏极(D)分别连接所述主测试结构对应的测试端口，源极(S)和衬底(B)短接且接地。
为准确表征寄生电容，所述模型电路包括多个寄生元件，所述多个寄生元件包括多个寄生电容，所述多个寄生电容包括所述栅极和所述衬底之间形成的栅衬寄生电容Cgb、所述源极和所述衬底之间形成的源衬寄生电容Csb、及所述漏极和所述衬底之间形成的漏衬寄生电容Cdb。
本实施例中，所述测试系统另外还设置了从测试结构。如图4所示，所述从测试结构包括第二MOS器件(记为DUT2)，所述第二MOS器件的电极连接方式与第一MOS器件不同，所述第二MOS器件的源极和漏极分别连接所述从测试结构对应的测试端口，栅极单独接出(即不与源极、漏极、衬底中的任一个短接)以便于设置相应的偏压，衬底接地，从而可获得所述从测试结构的S参数，以表征上述各寄生电容，后续建模时，在模型电路的计算时加入各寄生电容，提高射频MOS模型的准确度。
所述测试系统还可以包括第一去嵌结构以及第二去嵌结构，第一去嵌结构对应所述主测试结构，第二去嵌结构对应所述从测试结构。
本实施例中，S1还包括构建模型电路，所述模型电路包括本征MOS器件和多个寄生元件，所述本征MOS器件具有源极、漏极、栅极和衬底四个电极，所述多个寄生元件包括上述各寄生电容。
所述本征MOS器件、所述第一MOS器件和所述第二MOS器件的版图和尺寸均与要建模的射频MOS器件相同。
图6为本发明一实施例的射频MOS器件的模型电路示意图。如图6所示，在S1构建的模型电路的基础上，本实施例除了包括如图2所示出的各个寄生元件外，至少还包括各寄生电容。
如图6所示，本实施例步骤S1构建的模型电路中，本征MOS器件具有源极(Si)、漏极(Di)、栅极(Gi)、衬底(Bi)这四个电极，栅漏寄生电容Cgd的一端、漏源寄生电容Cds的一端、漏极寄生二极管DD的一端均连接节点M；栅源寄生电容Cgs的一端、漏源寄生电容Cds的另一端、源极寄生二极管DS的一端均连接节点N；衬底端寄生电阻Rb的一端、漏衬寄生电阻Rdb的一端、源衬寄生电阻Rsb的一端均连接节点P；栅漏寄生电容Cgd的另一端、栅源寄生电容Cgs的另一端均连接节点Q；所述漏极寄生二极管DD的另一端连接漏衬寄生电阻Rdb的另一端，所述源极寄生二极管DS的另一端连接源衬寄生电阻Rsb的另一端。
此外，模型电路还设置有漏极端口(D)、衬底端口(B)、源极端口(S) 和栅极端口(G)；漏极端寄生电阻Rd的一端与节点M连接，另一端与漏极端口连接；漏极端寄生电阻Rd的一端与节点P连接，另一端与衬底端口连接；栅极端寄生电阻Rg的一端与节点Q连接，另一端与栅极端口连接；衬底寄生电阻Rb的一端与节点N连接，另一端与源极端口连接；漏衬寄生电容Cdb的两端分别与漏极端口和衬底端口连接；源衬寄生电容Csb的两端分别与衬底端口和源极端口S连接；栅衬寄生电容Cgb分别与栅极端口和衬底端口连接。
S2：分别对所述主测试结构和所述从测试结构进行测试，并作对应的去嵌处理，以获得所述主测试结构在工作频率范围内的去嵌后的S参数和电流电压数据，以及所述从测试结构在工作频率范围内的去嵌后的S参数。本实施例中，第一MOS器件和第二MOS器件的工作频率范围可以为0G～100G。所述本征MOS器件、第一MOS器件和所述第二MOS器件的工作频率范围与要建模的MOS器件的工作频率范围相同。在对主测试结构和从测试结构进行测试时，测试频率范围可以在所述工作频率范围内。
本实施例可以采用现有技术，对测试系统中的各个测试结构进行S参数测试，以获得各个测试结构对应的S参数，以及所述主测试结构的电流电压数据。
S2具体可以包括：首先，分别对所述主测试结构、所述从测试结构、所述第一去嵌结构和所述第二去嵌结构进行S参数测试，以获得对应的S参数；基于所述第一去嵌结构的S参数，对所述主测试结构的S参数进行处理(运算)，获得所述主测试结构去嵌后的S参数；以及基于所述第二去嵌结构的S参数，对所述从测试结构的S参数进行处理(运算)，获得所述从测试结构去嵌后的S参数。利用主测试结构和从测试结构去嵌后的S参数进行射频MOS器件建模，有助于提高射频MOS器件模型的准确度。
具体的，所述第一去嵌结构和所述第二去嵌结构可以均包括开路测试子结构(即Open结构)和短路测试子结构(即short结构)。作为示例，首先，分别对所述主测试结构及其对应的开路测试子结构a和短路测试子结构b进 行S参数测试，并得到对应的S参数；然后，按照开路-短路(open-short)去嵌方法，对所述主测试结构进行去嵌，获得所述主测试结构去嵌后的S参数；接着，分别对所述从测试结构及其对应的开路测试子结构c和短路测试子结构d进行S参数测试，并得到对应的S参数；再按照open-short去嵌方法，对所述从测试结构进行去嵌，获得所述从测试结构去嵌后的S参数。
S3：设置每个所述寄生元件的初始值。
具体包括：
第一子步骤，确定所述模型电路对应的本征MOS器件、漏极寄生二极管DD和源极寄生二极管DS的模型及尺寸参数。
本实施例中，根据要建模的射频MOS器件的制造工艺，选定本征MOS器件、漏极寄生二极管DD和源极寄生二极管DS的对应模型；根据要建模的射频MOS器件沟道及源漏区的版图尺寸，确定本征MOS器件、漏极寄生二极管DD和源极寄生二极管DS的尺寸参数。
第二子步骤，基于要建模的射频MOS器件的版图，分别构建所述各寄生电容的抽取版图结构；以及利用后道寄生抽取工具，基于对应的所述抽取版图结构，分别抽取获得所述各寄生电容的初始值。
具体的，栅衬寄生电容Cgb的抽取版图结构如图7所示。栅衬寄生电容Cgb的抽取版图结构的电路如图8所示。如图7和图8所示，基于所述射频MOS器件的版图，可以仅保留栅极(G)的连接通路及衬底(B)的连接通路，得到所述栅衬寄生电容Cgb的抽取版图结构。
漏衬寄生电容Cdb和源衬寄生电容Csb的抽取版图结构如图9所示。漏衬寄生电容Cdb和源衬寄生电容Csb的抽取版图结构的电路如图10所示。如图9和图10所示，基于所述射频MOS器件的版图，可以仅保留源极(S)的连接通路及衬底(B)的连接通路，得到所述源衬寄生电容Csb的抽取版图结构，以及仅保留所漏极(D)的连接通路及衬底(B)的连接通路，得到所述漏衬寄生电容Cdb的抽取版图结构。
本实施例中，采用本领域常规的后道寄生抽取工具，分别抽取出各寄生电容的初始值，在此对所述后道寄生抽取工具不作限定。
第三子步骤，将所述各寄生电容的初始值代入步骤S1构建的模型电路。
本实施例中，基于本征MOS器件的模型，通过拟合所述主测试结构的电流电压数据，确定所述漏极端寄生电阻Rd和所述源极端寄生电阻Rs的初始值；将所述主测试结构去嵌后的S参数转换为所述主测试结构去嵌后的Y参数和Z参数，拟合所述主测试结构去嵌后的Y参数和Z参数的不同分量，获得漏衬寄生电阻Rdb、源衬寄生电阻Rsb、衬底端寄生电阻Rb、栅极端寄生电阻Rg、各寄生电容的初始值。
在第三子步骤中，可以将所述主测试结构去嵌后的S参数转换为所述主测试结构去嵌后的Y参数和Z参数，通过在零偏置条件下且在测试频率范围内(例如测试频率范围为要建模的射频MOS器件的工作频率范围)，拟合所述主测试结构去嵌后的Y参数的分量Y11、Y21、Y22的虚部，可以确定各寄生电容的初始值，拟合测试频率范围内主测试结构去嵌后的Y参数和Z参数的分量Y11和Z11的实部，可以确定栅极端寄生电阻Rg的初始值，通过拟合主测试结构去嵌后的Y参数和Z参数的分量Y22和Z22的实部，可以确定衬底端寄生电阻Rb、源衬寄生电阻Rsb和漏衬寄生电阻Rdb的初始值；此处，S参数(散射参数)、Y参数(导纳参数)和Z参数(阻抗参数)均为矩阵参数，Y11为主测试结构去嵌后的Y参数矩阵对应的第一行第一列数值，Y21为主测试结构去嵌后的Y参数矩阵对应的第二行第一列数值，Y22为主测试结构去嵌后的Y参数矩阵对应的第二行第二列数值，Z11为主测试结构去嵌后的Z参数矩阵对应的第一行第一列数值，Z22为主测试结构去嵌后的Z参数矩阵对应的第二行第二列数值。
所述第三子步骤还可以包括：重复拟合所述主测试结构去嵌后的Y参数和Z参数的各分量，迭代修正栅源寄生电容Cgs、栅漏寄生电容Cgd、栅衬寄生电容Cgb、漏衬寄生电容Cdb、栅极端寄生电阻Rg、漏极端寄生电阻Rd、源极端寄生电阻Rs、衬底端寄生电阻Rb和漏衬寄生电阻Rdb的初始值直至 收敛，有助于提高获得的射频MOS器件模型的准确度。
S4：利用所述从测试结构对应的去嵌后的S参数，对所述多个寄生元件中的至少部分的初始值进行修正。
S4具体包括：首先，针对所述从测试结构，获取从测试结构对应的源极和漏极在零偏置下去嵌后的S参数；然后，在零偏置下，将从测试结构去嵌后的S参数转换为所述从测试结构去嵌后的Y参数和Z参数，通过拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，对所述多个寄生元件中至少部分的初始值进行修正。
具体的，基于从测试结构去嵌后的Y参数的分量Y11、Y21、Y22的虚部，修正各寄生电容的初始值；基于从测试结构去嵌后的Y参数的分量Y11、Y21和Y22，以及去嵌后的Z参数的分量Z11和Z22的实部，修正漏衬寄生电阻Rdb、源衬寄生电阻Rsb、衬底端寄生电阻Rb、源极端寄生电阻Rs、漏极端寄生电阻Rd的初始值；此处，S参数、Y参数和Z参数均为矩阵参数，Y11为从测试结构去嵌后的Y参数矩阵对应的第一行第一列数值，Y21为从测试结构去嵌后的Y参数矩阵对应的第二行第一列数值，Y22为从测试结构去嵌后的Y参数矩阵对应的第二行第二列数值，Z11为从测试结构去嵌后的Z参数矩阵对应的第一行第一列数值，Z22为从测试结构去嵌后的Z参数矩阵对应的第二行第二列数值。
本实施例中，S4还可以包括：通过重复拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，以对所述多个寄生元件中至少部分的初始值进行迭代修正直至收敛。
S5：设置所述多个寄生元件对应的多个寄生参数值。换言之，本实施例的步骤S5为：获得或确定步骤S1构建的模型电路中各个寄生元件的寄生参数值。
本实施例中，在得到所述多个寄生参数值后，本实施例的建模方法还可以包括：迭代进行设置所述多个寄生元件的初始值的步骤(即S3)至设置所述多个寄生参数值的步骤(即迭代进行S3至S5)，并利用所述多个所述寄生 参数值对S1构建的模型电路进行仿真测试，直至所述模型电路的仿真结果与所述主测试结构的测试数据的拟合误差处于相应的设定范围内，且与所述从测试结构的测试数据的拟合误差也处于相应的设定范围内。
本实施例中，在确定步骤S1构建的模型电路中的多个寄生元件对应的多个寄生参数值后，即可获得射频MOS器件模型。
本实施例的测试系统，利用所述从测试结构的S参数，还可以对所述模型电路中的寄生元件的初始值进行修正，有助于提高寄生元件的参数值准确度，提高获得的射频MOS器件模型的精度和适用范围。
上述描述仅是对本发明较佳实施例的描述，并非对本发明权利范围的任何限定，任何本领域技术人员在不脱离本发明的精神和范围内，都可以利用上述揭示的方法和技术内容对本发明技术方案做出可能的变动和修改，因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化及修饰，均属于本发明技术方案的保护范围。

Claims (13)

  1. 一种用于射频MOS器件建模的测试系统，其特征在于，所述测试系统包括主测试结构和从测试结构，所述主测试结构和所述从测试结构均采用二端口测试连接；其中，所述主测试结构包括第一MOS器件，所述第一MOS器件的栅极和漏极分别连接所述主测试结构对应的测试端口，源极和衬底短接且接地；所述从测试结构包括第二MOS器件，所述第二MOS器件的源极和漏极分别连接所述从测试结构对应的测试端口，栅极单独接出以便于设置相应的偏压，所述第二MOS器件的衬底接地。
  2. 如权利要求1所述的测试系统，其特征在于，所述测试系统还包括第一去嵌结构以及第二去嵌结构，第一去嵌结构对应所述主测试结构，第二去嵌结构对应所述从测试结构。
  3. 如权利要求2所述的测试系统，其特征在于，所述第一去嵌结构和所述第二去嵌结构均包括开路测试子结构和短路测试子结构。
  4. 一种射频MOS器件的建模方法，其特征在于，包括：
    提供如权利要求1至3任一项所述的测试系统，并构建模型电路，所述模型电路包括本征MOS器件和多个寄生元件，所述本征MOS器件具有源极、漏极、栅极和衬底四个电极，所述多个寄生元件包括多个寄生电容；
    分别对所述主测试结构和所述从测试结构进行测试并作去嵌处理，以获得所述主测试结构对应的去嵌后的S参数和电流电压数据，以及所述从测试结构对应的去嵌后的S参数；
    设置每个所述寄生元件的初始值；
    利用所述从测试结构对应的去嵌后的S参数，对所述多个寄生元件中至 少部分的初始值进行修正；以及
    设置所述多个寄生元件对应的多个寄生参数值。
  5. 如权利要求4所述的建模方法，其特征在于，所述测试系统还包括第一去嵌结构以及第二去嵌结构，第一去嵌结构对应所述主测试结构，第二去嵌结构对应所述从测试结构；
    其中，分别对所述主测试结构和所述从测试结构进行测试并作去嵌处理的步骤具体包括：分别对所述主测试结构、所述从测试结构、所述第一去嵌结构和所述第二去嵌结构进行S参数测试，并获得对应的S参数；基于所述第一去嵌结构的S参数，对所述主测试结构的S参数进行处理，获得所述主测试结构去嵌后的S参数；基于所述第二去嵌结构的S参数，对所述从测试结构的S参数进行处理，获得所述从测试结构去嵌后的S参数。
  6. 如权利要求4所述的建模方法，其特征在于，设置每个所述寄生元件的初始值的方法包括：
    基于要建模的射频MOS器件的版图，分别构建所述各寄生电容的抽取版图结构；以及
    利用后道寄生抽取工具，基于对应的所述抽取版图结构，分别抽取获得所述各寄生电容的初始值。
  7. 如权利要求6所述的建模方法，其特征在于，所述多个寄生电容包括所述栅极和所述衬底之间形成的栅衬寄生电容Cgb、所述源极和所述衬底之间形成的源衬寄生电容Csb、及所述漏极和所述衬底之间形成的漏衬寄生电容Cdb。
  8. 如权利要求7所述的建模方法，其特征在于，分别构建所述各寄生 电容的抽取版图结构的方法包括：
    基于所述射频MOS器件的版图，仅保留栅极的连接通路及衬底的连接通路，得到所述栅衬寄生电容Cgb的抽取版图结构，仅保留源极的连接通路及衬底的连接通路，得到所述源衬寄生电容Csb的抽取版图结构，及仅保留漏极的连接通路及衬底的连接通路，得到所述漏衬寄生电容Cdb的抽取版图结构。
  9. 如权利要求8所述的建模方法，其特征在于，所述多个寄生元件还包括漏衬寄生电阻Rdb、源衬寄生电阻Rsb、衬底端寄生电阻Rb、漏极端寄生电阻Rd、源极端寄生电阻Rs、栅极端寄生电阻Rg、栅漏寄生电容Cgd、栅源寄生电容Cgs、漏源寄生电容Cds、漏极寄生二极管DD和源极寄生二极管DS。
  10. 如权利要求9所述的建模方法，其特征在于，设置每个所述寄生元件的初始值的步骤还包括：
    将所述栅衬寄生电容Cgb、所述源衬寄生电容Csb和所述漏衬寄生电容Cdb的初始值代入所述模型电路，并且，通过拟合所述主测试结构的电流电压数据，确定所述漏极端寄生电阻Rd和所述源极端寄生电阻Rs的初始值；
    将所述主测试结构去嵌后的S参数转换为所述主测试结构去嵌后的Y参数和Z参数；以及
    通过拟合所述主测试结构去嵌后的Y参数和所述Z参数的不同分量，获得所述漏衬寄生电阻Rdb、所述源衬寄生电阻Rsb、所述衬底端寄生电阻Rb、所述栅极端寄生电阻Rg、所述栅漏寄生电容Cgd、所述栅源寄生电容Cgs和所述漏源寄生电容Cds的初始值。
  11. 如权利要求4所述的建模方法，其特征在于，利用所述从测试结构去嵌后的S参数对所述多个寄生元件中至少部分的初始值进行修正的步骤包括：
    针对所述从测试结构，获取源极和漏极在零偏置下去嵌后的S参数；
    将所述零偏置下去嵌后的S参数转换为所述从测试结构去嵌后的Y参数和Z参数；以及，
    通过拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，对所述多个寄生元件中至少部分的初始值进行修正。
  12. 如权利要求11所述的建模方法，其特征在于，利用所述从测试结构去嵌后的S参数对所述多个寄生元件中至少部分的初始值进行修正的步骤包括：通过重复拟合所述从测试结构去嵌后的Y参数和Z参数的不同分量，以对所述多个寄生元件中至少部分的初始值进行迭代修正直至收敛。
  13. 如权利要求4所述的建模方法，其特征在于，在得到所述多个寄生参数值后，所述建模方法还包括：
    迭代进行设置所述多个寄生元件的初始值的步骤至设置所述多个寄生参数值的步骤，并利用所述多个寄生参数值对所述模型电路进行仿真测试，直至所述模型电路的仿真结果与所述主测试结构的测试数据的拟合误差处于相应的设定范围内，且与所述从测试结构的测试数据的拟合误差也处于相应的设定范围内。
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