CN206421387U - AlGaN/GaN HEMT小信号模型 - Google Patents
AlGaN/GaN HEMT小信号模型 Download PDFInfo
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- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract description 44
- 230000003071 parasitic effect Effects 0.000 claims abstract description 88
- 239000003990 capacitor Substances 0.000 claims abstract description 12
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106529102A (zh) * | 2016-12-27 | 2017-03-22 | 深圳市华讯方舟微电子科技有限公司 | AlGaN/GaN HEMT小信号模型及其参数的提取方法 |
CN108092508A (zh) * | 2017-12-26 | 2018-05-29 | 西南大学 | 一种3-z网络升压变换器小信号模型的建立方法和装置 |
CN111653553A (zh) * | 2020-04-30 | 2020-09-11 | 西安电子科技大学 | 一种Si基GaN毫米波传输线结构及制备方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106529102A (zh) * | 2016-12-27 | 2017-03-22 | 深圳市华讯方舟微电子科技有限公司 | AlGaN/GaN HEMT小信号模型及其参数的提取方法 |
WO2018121479A1 (zh) * | 2016-12-27 | 2018-07-05 | 深圳市华讯方舟微电子科技有限公司 | AlGaN/GaN HEMT小信号模型及其参数的提取方法 |
CN106529102B (zh) * | 2016-12-27 | 2023-11-24 | 青岛君戎华讯太赫兹科技有限公司 | AlGaN/GaN HEMT小信号模型及其参数的提取方法 |
CN108092508A (zh) * | 2017-12-26 | 2018-05-29 | 西南大学 | 一种3-z网络升压变换器小信号模型的建立方法和装置 |
CN111653553A (zh) * | 2020-04-30 | 2020-09-11 | 西安电子科技大学 | 一种Si基GaN毫米波传输线结构及制备方法 |
CN111653553B (zh) * | 2020-04-30 | 2024-03-29 | 西安电子科技大学 | 一种Si基GaN毫米波传输线结构及制备方法 |
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Inventor after: Wu Guangsheng Inventor after: Zhou Haifeng Inventor after: Ding Qing Inventor after: Li Xiaocong Inventor after: Wang Jiajia Inventor before: Wang Jiajia Inventor before: Zhou Haifeng Inventor before: Ding Qing |
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