WO2022249995A1 - 検出基板、検出機及び検出装置 - Google Patents

検出基板、検出機及び検出装置 Download PDF

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Publication number
WO2022249995A1
WO2022249995A1 PCT/JP2022/021004 JP2022021004W WO2022249995A1 WO 2022249995 A1 WO2022249995 A1 WO 2022249995A1 JP 2022021004 W JP2022021004 W JP 2022021004W WO 2022249995 A1 WO2022249995 A1 WO 2022249995A1
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WIPO (PCT)
Prior art keywords
light
diamond crystal
center
detection
substrate
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Ceased
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PCT/JP2022/021004
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English (en)
French (fr)
Japanese (ja)
Inventor
裕司 岸田
博道 吉川
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Kyocera Corp
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Kyocera Corp
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Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to US18/562,786 priority Critical patent/US20240219486A1/en
Priority to CN202280034596.XA priority patent/CN117295961A/zh
Priority to JP2023523452A priority patent/JPWO2022249995A1/ja
Priority to EP22811265.2A priority patent/EP4350376A4/en
Publication of WO2022249995A1 publication Critical patent/WO2022249995A1/ja
Anticipated expiration legal-status Critical
Priority to JP2025092033A priority patent/JP2025116172A/ja
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/26—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux using optical pumping
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/035—Measuring direction or magnitude of magnetic fields or magnetic flux using superconductive devices
    • G01R33/0354—SQUIDS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N24/00—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects
    • G01N24/006—Investigating or analyzing materials by the use of nuclear magnetic resonance, electron paramagnetic resonance or other spin effects using optical pumping

Definitions

  • the present disclosure relates to detection substrates, detectors, and detection devices.
  • Patent Document 1 discloses a device that uses a SQUID element to measure the magnetic field on each point of a sample.
  • Patent Document 1 With the technique described in Patent Document 1, it is necessary to insert a sapphire window between the sample and the SQUID element, and to provide a certain distance for heat insulation between the sapphire window and the SQUID element. Therefore, the SQUID element cannot be brought close to the sample. Therefore, it is difficult to separate adjacent magnetic field distributions and observe them individually. Thus, there is room for improvement in detection accuracy.
  • a detection substrate includes a diamond crystal having NV centers formed on one surface thereof, and a radiator located on the surface of the diamond crystal opposite to the surface having the NV centers formed thereon.
  • a detector is a detector having a detection substrate and a dielectric substrate, the detection substrate including a diamond crystal on which an NV center is formed and a radiator provided on the diamond crystal.
  • a detection device is a detection device comprising the above-described detector, a light-emitting element, and a light-receiving element, wherein the light-emitting element irradiates the NV center with light, and the light-receiving element Receive fluorescence from NV centers.
  • a magnetic field can be detected with high accuracy.
  • FIG. 1 is a cross-sectional view illustrating an outline of a detection substrate of a detector according to the first embodiment.
  • FIG. 2 is a schematic diagram illustrating an example of a detector and a detection device according to the first embodiment.
  • FIG. 3 is a schematic diagram illustrating another example of the detector and detection device according to the first embodiment.
  • FIG. 4 is a schematic diagram illustrating another example of the dielectric substrate.
  • FIG. 5 is a block diagram illustrating an example of a signal control unit;
  • FIG. 6 is a cross-sectional view for explaining the outline of the detection substrate of the detector according to the second embodiment.
  • FIG. 7 is a schematic diagram illustrating an example of a detector and a detection device according to the second embodiment.
  • FIG. 8 is a schematic diagram illustrating an example of a detection substrate.
  • FIG. 9 is a plan view illustrating an example of an antenna conductor.
  • FIG. 10 is a plan view explaining another example of the antenna conductor.
  • FIG. 11 is a plan view explaining another example of the antenna conductor.
  • FIG. 12 is a graph illustrating an example of reflection characteristics of an antenna conductor.
  • FIG. 1 is a cross-sectional view illustrating an outline of a detection substrate of a detector according to the first embodiment.
  • FIG. 2 is a schematic diagram illustrating an example of a detector and a detection device according to the first embodiment.
  • FIG. 3 is a schematic diagram illustrating another example of the detector and detection device according to the first embodiment.
  • a detection target is an object to be detected by the detector 10 and the detection device 1, in other words, a sample.
  • a magnetic field is generated by the electric current in the object to be detected.
  • the object to be detected has a dielectric 100 and conductors 101 , 102 , 103 and 104 arranged inside the dielectric 100 .
  • the conductor 101, the conductor 102, and the conductor 103 are arranged on the surface 100a side of the dielectric 100 with a space therebetween.
  • the width d21 of the conductors 101, 102 and 103 is, for example, about 1 ⁇ m.
  • the conductor 104 is arranged on the surface 100b side of the dielectric 100 .
  • a current I1 flows through the conductor 101 from the front side to the back side in FIG.
  • a current I1 flows through the dielectric 100 on the surface 100a side.
  • the arrow indicates the direction of the magnetic field F1 due to the current I1.
  • a current I2 flows through the conductor 102 from the back side to the front side in FIG.
  • a current I2 flows through the dielectric 100 on the surface 100a side.
  • the arrow indicates the direction of the magnetic field F2 due to the current I2.
  • a current I3 flows through the conductor 103 from the front side to the back side in FIG.
  • a current I3 flows through the dielectric 100 on the surface 100a side.
  • the arrow indicates the direction of the magnetic field F3 due to the current I3.
  • a current I4 flows through the conductor 104 from left to right in FIG.
  • a current I4 flows through the dielectric 100 on the surface 100b side.
  • the arrow indicates the direction of the magnetic field F4 generated by the current I4.
  • Detector 10 includes a detection substrate 11 and a dielectric substrate 13 .
  • the detection substrate 11 is a so-called diamond sensor.
  • the detection substrate 11 includes a diamond crystal 111, an NV center 112, a high-frequency line conductor (not shown), and an antenna conductor 113 as a radiator.
  • the diamond crystal 111 has an NV center 112 formed on the surface 111b opposite to the surface 111a in contact with the antenna conductor 113 .
  • the diamond crystal 111 has a side length d11 of 2 mm, for example.
  • the diamond crystal 111 has a thickness d12 of 100 ⁇ m, for example.
  • the surface 111a is exposed at a portion where the antenna conductor 113 is not provided.
  • the exposed portion is called an exposed portion 111c.
  • the exposed portion 111c is located in the central portion of the surface 111a of the diamond crystal 111. As shown in FIG.
  • the surface 111b is a magnetic field acting surface facing the detection target.
  • An NV center 112 is formed on the surface 111b side.
  • the surface 111b is a smooth flat surface that can adhere to or approach the surface of the detection target at a level of several ⁇ m or less while being parallel to the surface of the detection target.
  • a conductive thin film may be provided on the surface 111b to allow current to flow through magnetic field coupling with the object to be detected.
  • An objective lens (not shown) may be arranged close to the surface 111a of the diamond crystal 111, and the diamond crystal 111 and the objective lens may be provided with an antireflection film on their surfaces.
  • the diamond crystal 111 has a surface 111b protruding from the dielectric substrate 13 on which the NV center 112 is provided.
  • the surface 111b is a portion that senses the magnetic field to be measured.
  • a single NV center 112 may be arranged on the surface 111b side of the diamond crystal 111, or a plurality thereof may be arranged.
  • FIG. 1 and the like illustrate a state in which a plurality of NV centers 112 are arranged.
  • the NV center 112 is preferably oriented in one direction.
  • NV centers 112 may be crystals of different orientations.
  • the NV center 112 is a complex defect in the diamond crystal 111 where carbon is substituted with nitrogen and vacancies are present at adjacent positions.
  • the NV center 112 lacks part of the degenerate shared electron pairs.
  • the magnetic field and current can be detected by capturing this change as the frequency change of fluorescence intensity.
  • Light with a wavelength of 532 nm is incident from the exposed portion 111c, and fluorescent light with a wavelength of 638 nm is emitted from the exposed portion 111c.
  • a high-frequency line conductor is formed on the surface 111a of the diamond crystal 111.
  • the high-frequency line conductor has a center conductor and a ground conductor spaced a certain distance therefrom. Impedance is adjusted by the distance between the central conductor and the grounded conductor.
  • the center conductor and ground conductor are connected to the center conductor and ground conductor of the high-frequency line conductor of the dielectric substrate 13 by solder 15, respectively.
  • the antenna conductor 113 transmits and radiates microwaves to irradiate the NV center 112 of the diamond crystal 111 .
  • Antenna conductor 113 is located on the surface of diamond crystal 111 opposite to the surface on which NV center 112 is formed.
  • the antenna conductor 113 is electrically connected to the exposed portion of the internal pattern 16 of the dielectric substrate 13 through the solder 15 .
  • the antenna conductor 113 is provided on the outer peripheral side of the surface 111a of the diamond crystal 111 .
  • the antenna conductor 113 is formed in a ring shape when viewed in the normal direction of the surface 111a (hereinafter referred to as “plan view”).
  • Antenna conductor 113 is a loop antenna formed of a conductive thin film.
  • An end of the antenna conductor 113 is connected to the ground conductor of the high frequency line conductor.
  • the antenna conductor 113 has a loop diameter of several millimeters.
  • An exposed portion 111c is arranged substantially in the center inside the antenna conductor 113 and serves as an optical input/output portion. Further, the exposed portion 111c is arranged inside the collar portion 133 of the dielectric substrate 13 .
  • the dielectric substrate 13 is a support substrate that supports the outer peripheral side of the detection substrate 11 .
  • the dielectric substrate 13 accommodates the detection substrate 11 .
  • the dielectric substrate 13 is formed in a cylindrical shape that accommodates the detection substrate 11 .
  • the dielectric substrate 13 is formed in a rectangular tubular shape corresponding to the outer shape of the detection substrate 11 .
  • the dielectric substrate 13 is made of, for example, SiO 2 , a glass material, a ceramic material, or a resin material such as glass epoxy.
  • a high-frequency transmission line is formed on the dielectric substrate 13 , and this high-frequency transmission line is electrically connected to the antenna conductor 113 .
  • the dielectric substrate 13 has a first accommodation portion 131 , a second accommodation portion 132 and a collar portion 133 .
  • the first accommodating portion 131 and the second accommodating portion 132 are separated by a flange portion 133 arranged in the axially intermediate portion of the dielectric substrate 13 .
  • the collar portion 133 protrudes toward the inner peripheral side of the dielectric substrate 13 .
  • the flange portion 133 is formed in a ring shape in plan view.
  • the first housing portion 131 is a support portion that supports the optical window 14 .
  • the first accommodating portion 131 is arranged on one side of the dielectric substrate 13 in the axial direction.
  • the optical window 14 is arranged in the central portion of the first accommodating portion 131 of the dielectric substrate 13 .
  • the second housing portion 132 is a support portion that supports the detection substrate 11 .
  • the second accommodating portion 132 is arranged on the other side of the dielectric substrate 13 in the axial direction.
  • the detection substrate 11 is arranged in the central portion of the second housing portion 132 of the dielectric substrate 13 .
  • FIG. 2 illustrates a configuration in which the surface 111b protrudes in the axial direction from the surface 13b of the dielectric substrate 13, the surface 111b and the surface 13b of the dielectric substrate 13 may be flat.
  • the optical window 14 is accommodated in the dielectric substrate 13 and arranged to face the detection substrate 11 .
  • the optical window 14 is supported by the first housing portion 131 of the dielectric substrate 13 .
  • Optical window 14 inputs and outputs light to NV center 112 of detector substrate 11 of detector 10 .
  • the optical window 14 is made of a material such as sapphire or quartz.
  • One surface 14a of the optical window 14 is flat with the surface 13a of the dielectric substrate 13 opposite to the surface 13b.
  • the surface 14b of the optical window 14 opposite to the surface 14a faces the surface 111a of the diamond crystal 111 of the detection substrate 11 with a gap therebetween.
  • Optical window 14 is not an essential component.
  • the dielectric substrate 13 includes high-frequency transmission lines including internal patterns 16 and RF (Radio Frequency) vias 17 that transmit microwave signals to the detection substrate 11 .
  • a high-frequency transmission line is composed of two conductors provided on the dielectric substrate 13 . One of the conductors is the center conductor and the other is the ground conductor. The center conductor and the ground conductor are separated by a fixed distance.
  • the internal pattern 16 and the RF via 17 constitute either a central conductor or a ground conductor.
  • the center conductor and ground conductor are connected to the center conductor and ground conductor of the high-frequency line conductor of the detection substrate 11 by solder 15, respectively.
  • the interior pattern 16 is a thin-film conductor pattern formed inside the dielectric substrate 13 and includes a portion partially exposed on the surface of the dielectric substrate 13 .
  • the RF via 17 has a through hole formed in the inner wall of the via. This through hole functions as a signal line.
  • ground lines ground conductors
  • a through hole of the RF via 17 is connected to a signal line of the internal pattern 16 .
  • a signal line of the internal pattern 16 is connected via solder 15 to a pad 1142 (see FIG. 9, for example) to which the end of the antenna conductor 113 is connected.
  • the high-frequency microwave signal is transmitted through a high-frequency transmission path passing through the microwave source, pad 18, via 17, interior pattern 16, solder 15, pad 1142, and antenna conductor 113 in order.
  • microwaves are generated from the antenna conductor 113 .
  • the solder 15 is provided on the lower surface of the collar portion 133 of the dielectric substrate 13 .
  • the solder 15 is provided in a ring shape in plan view.
  • the solder 15 is electrically connected to the antenna conductor 113 and the internal pattern 16 of the detection board 11 .
  • the interior pattern 16 is provided on the collar portion 133 of the dielectric substrate 13 .
  • the internal pattern 16 is electrically connected to the solder 15 and the RF vias 17 .
  • the RF via 17 extends from the internal pattern 16 to the surface 13a of the dielectric substrate 13 at the outer peripheral portion of the dielectric substrate 13 .
  • the RF vias 17 are electrically connected with the internal pattern 16 and the bonding pads 18 .
  • the bonding pads 18 are provided on the surface 13a of the dielectric substrate 13. Bonding pad 18 is electrically connected to RF via 17 .
  • the dielectric substrate 13 described above has the first accommodating portion 131, the second accommodating portion 132, and the flange portion 133, the first accommodating portion 131, the second accommodating portion 132, and the flange portion 133 are provided.
  • a configuration without the flange portion 133 may be employed.
  • FIG. 4 is a schematic diagram explaining another example of the dielectric substrate.
  • the dielectric substrate 13 may be flat and have a through hole in the center.
  • the dielectric substrate 13 has a high-frequency transmission line on its surface or inside.
  • a diamond crystal 111 of the detection substrate 11 is provided on the lower surface of the dielectric substrate 13 so as to close the through hole.
  • An antenna conductor 113 provided on the upper surface (surface 111 a ) of the detection substrate 11 is connected to the high-frequency transmission line of the dielectric substrate 13 via solder 5 .
  • the exposed portion 111c of the diamond crystal 111 is visible from the upper surface side of the dielectric substrate through the through hole.
  • a high frequency connector may be attached to the end of the high frequency transmission line.
  • the dielectric substrate is used as an intermediary, so that a microwave input end of a large size that is easy to handle can be provided. It becomes easier to control and allow microwaves to pass through easily. Since light and microwaves are input and output from the surface 111a side of the detector 10 constructed in this way, it is possible to detect a minute circuit or the like to be detected close to the surface 111b side with good sensitivity. In addition, since the microwave is applied to the NV center 112 from the side of the surface 111a, transmission of the microwave is hindered by microcircuits or the like to be detected compared to the case where the NV center 112 is irradiated from the side of the surface 111b.
  • the antenna conductor 113 is small, it is possible to efficiently apply microwaves using a high-frequency line conductor or a high-frequency connector, so that it is suitable for high-resolution detection of microcircuits and the like.
  • the detection device 1 has a detector 10 , a light emitting element 21 and a light receiving element 22 . More specifically, the detection device 1 includes a detection substrate 11 , a dielectric substrate 13 that accommodates the detection substrate 11 , and a light emitting element 21 and a light receiving element 22 that input and output light to the NV center 112 .
  • the detection device 1 may include a sample stage 110 on which a detection target is placed.
  • the light-emitting element 21 and the light-receiving element 22 detect the magnetism of the dielectric 100, which is the object of detection. In this embodiment, the light emitting element 21 and the light receiving element 22 detect magnetism while scanning the dielectric 100 .
  • the light-emitting element 21 and the light-receiving element 22 are arranged to face the detection substrate 11 of the detector 10 .
  • the light emitting element 21 and the light receiving element 22 input and output light to the NV center 112 of the diamond crystal 111 .
  • the light emitting element 21 is a light source
  • the light receiving element 22 is a light receiver.
  • the light emitting element 21 and the light receiving element 22 are controlled by a control circuit (not shown).
  • the control circuit controls light emission in the light emitting element 21 .
  • the control circuit controls light reception by the light receiving element 22 .
  • the control circuit processes the red fluorescence signal received by the light receiving element 22 .
  • the control circuit outputs the strength of the magnetic field as a result
  • the light emitting element 21 irradiates the detection board 11 of the detector 10 with light.
  • the light emitting element 21 emits excitation light that irradiates the diamond crystal 111 .
  • the light emitting element 21 irradiates excitation light to the NV center 112 .
  • the light emitting element 21 is a laser diode.
  • the light emitting element 21 emits laser light with a wavelength of 527 nm, for example, under the control of the control circuit.
  • the light emitting element 21 emits green excitation light.
  • a green light emitting diode LED: Light Emitting Diode
  • a green surface emitting laser diode VCSEL: Vertical Cavity Surface Emitting Laser
  • a green edge emitting laser diode LD: Laser Diode
  • the light receiving element 22 detects fluorescence from the detection substrate 11 of the detector 10 .
  • the light receiving element 22 is a photodiode.
  • the light receiving element 22 receives fluorescence from the NV center 112 of the diamond crystal 111 under the control of the control circuit.
  • the light receiving element 22 receives fluorescence emitted by the excitation light from the diamond crystal 111 .
  • a Si-PIN photodiode PD: Photo Diode
  • InGaAs-PIN photodiode or the like can be used.
  • the light-emitting element 21 and the light-receiving element 22 may be arranged in close contact with the exposed portion 111c of the surface 111a of the diamond crystal 111, for example, as shown in FIG. In this case, power is supplied to each of the light-emitting element 21 and the light-receiving element 22 from wiring (not shown) formed independently of the dielectric substrate 13 .
  • the light-emitting element 21 and the light-receiving element 22 may be arranged at a constant distance above the exposed portion 111c of the surface 111a of the diamond crystal 111, for example, as shown in FIG.
  • an optical window which is an optical component such as a lens or a mirror, may be used between the light emitting element 21 and light receiving element 22 and the NV center 112 .
  • the light emitting element 21 and the light receiving element 22 may be an optical pickup in which light receiving and emitting are integrated.
  • the sample stage 110 is a table on which an object is placed.
  • the sample stage 110 has a flat surface 110a. An object is placed on the surface 110a.
  • the light-emitting element 21 and the light-receiving element 22 may be miniaturized to input/output fluorescence/excitation light while scanning the surface 111a of the diamond crystal 111 of the detection substrate 11 of the detector 10.
  • the light-emitting element 21 and the light-receiving element 22 may be shaped so that fluorescence and excitation light can be input to and output from the entire surface 111a of the diamond crystal 111 of the detection substrate 11 of the detector 10 without scanning.
  • the microwave that irradiates the NV center 112 of the diamond crystal 111 is generated by the oscillation element 31 (see FIG. 5), which is the microwave source.
  • the oscillation element 31 is, for example, a voltage controlled oscillation element (VCO: Voltage Controlled Oscillator).
  • the oscillation element 31 is, for example, a heterojunction bipolar transistor (HBT: Heterojunction Bipolar Transistor), a field effect transistor (FET: Field Effect Transistor), a complementary MOS (Metal-Oxide Semiconductor), a high electron mobility transistor (HEMT: High Electron It may be composed of a semiconductor element such as a Mobility Transistor.
  • the material of the semiconductor element is Si, GaAs, or GaN, for example.
  • Such an oscillator is connected to pad 18 by a high frequency circuit (not shown). 2 and 3, the illustration of the oscillation element is omitted.
  • FIG. 5 is a block diagram illustrating an example of a signal control unit;
  • the signal control unit 200 is, for example, a microcomputer.
  • the signal control section 200 controls the light emitting operation of the light emitting element 21 .
  • the signal control section 200 controls the light receiving operation of the light receiving element 22 .
  • the signal control unit 200 controls the microwave oscillation operation of the oscillation element 31, which is a microwave source for generating microwaves.
  • An optical signal of the fluorescence image captured by the light receiving element 22 is output to the signal control section 200 .
  • the signal control unit 200 has a signal processing unit 202 as a signal processing circuit and a control unit 201 as a control circuit.
  • the control unit 201 supplies timing signals to the light receiving element 22, the light emitting element 21, and the oscillation element 31 to perform operation control.
  • the control unit 201 performs control for setting the frequency of the microwave output from the oscillation element 31 .
  • the signal processing unit 202 performs image processing on the fluorescence image based on the optical signal input from the light receiving element 22 .
  • the signal control unit 200 and the oscillation element 31 are each formed on, for example, a semiconductor chip. Although FIG. 5 shows an example in which the signal control section 200 and the oscillation element 31 are formed by different semiconductor chips, they may be formed by one semiconductor chip.
  • Detection method A method of detecting a magnetic field to be detected using the detection device 1 will be described. First, the dielectric 100 to be detected is placed on the surface 110 a of the sample stage 110 . A magnetic field F1, a magnetic field F2, a magnetic field F3 and a magnetic field F4 are generated in the dielectric 100 by the current I1, the current I2, the current I3 and the current I4.
  • the surface 100a of the dielectric 100 is brought close to or in close contact with the surface 111b of the diamond crystal 111, which is the magnetic field acting surface of the detection substrate 11 of the detection device 1.
  • a spatial change in the direction or magnitude of the magnetic field generated in the dielectric 100 acts on the NV center 112 near the surface 111b of the diamond crystal 111 of the detection substrate 11 of the detection device 1.
  • the detection substrate 11 is scanned with fluorescence/excitation light by the light-emitting element 21 and the light-receiving element 22 of the detection device 1 .
  • the NV center 112 is irradiated and excited from the exposed portion 111c of the surface 111a of the diamond crystal 111 of the detection substrate 11 .
  • the light-emitting element 21 and the light-receiving element 22 receive the electron spin resonance signal of the NV center 112 excited by the excitation light from the exposed portion 111c of the surface 111a of the diamond crystal 111 as fluorescence.
  • the light-emitting element 21 and the light-receiving element 22 receive fluorescence signals corresponding to changes in the direction or magnitude of the magnetic field.
  • the light-emitting element 21 and the light-receiving element 22 of the detection device 1 detect the magnetic charge to be detected.
  • the light-emitting element 21 and the light-receiving element 22 detect the level of the magnetic charge to be detected.
  • the light-emitting element 21 and the light-receiving element 22 calculate the strength of the magnetic field from the signals, which are the detection results of the light-emitting element 21 and the light-receiving element 22, and output the result.
  • An example of the application of the detection device 1 shown in FIG. 2 is the magnetic head of a magnetic force microscope.
  • a magnetic head is used in connection with a magnetic force microscope.
  • the semiconductor element in which the signal control section is formed and the semiconductor element in which the microwave source is formed are mounted on the magnetic force microscope rather than the magnetic head itself.
  • the bonding pad 18 is connected to the microwave source, and the light emitting element 21 and the light receiving element 22 are connected to the signal controller.
  • the diamond crystal 111 can be provided with both the NV center 112 and the antenna conductor 113 .
  • the NV center 112 and the antenna conductor 113 can be provided close to each other.
  • the present embodiment can accurately arrange the antenna conductor 113 with respect to the NV center 112 . Therefore, this embodiment can effectively apply microwaves of sufficient intensity to the NV center 112 at a specific site with low power.
  • the NV center 112 is formed on one surface 111b of the diamond crystal 111, and the antenna conductor 113 is formed on the opposite surface 111a.
  • the antenna conductor 113 on the other surface 111a can be accurately arranged with respect to the NV center 112 on the one surface 111b in terms of manufacturing. According to this embodiment, microwaves of sufficient intensity can be effectively applied to the NV center 112 at a specific site with low power.
  • one surface 111b of the diamond crystal 111 is arranged so as to be close to the detection target. According to this embodiment, since the NV center 112 is close to the detection target, it is possible to improve the measurement accuracy. Also, in this embodiment, the NV center 112 is formed on one surface 111b of the diamond crystal 111, and the antenna conductor 113 is formed on the opposite surface 111a, so that the one surface 111b can be brought closer to the detection target.
  • the NV centers 112 of a plurality of parts and each circuit can be arranged in a highly accurate positional relationship. According to the present embodiment, it is also possible to easily implement expansion so that multiple NV centers 112 operate independently.
  • the NV center 112 and the antenna conductor 113 are integrated with the diamond crystal 111 interposed therebetween. According to this embodiment, it is possible to reduce the fluctuation of the arrangement due to temperature fluctuation, mechanical vibration, and the like, with respect to assembly as a module. According to this embodiment, highly stable operation can be achieved.
  • the surface 111b of the diamond crystal 111 which is the magnetic field acting surface of the detection substrate 11 of the detection device 1
  • the surface 111b of the diamond crystal 111 of the detection device 1 can be brought close to or in close contact with the object to be detected.
  • the present embodiment can detect a change in the direction or magnitude of a magnetic field of several ⁇ m, which has been difficult to detect in the past, and a spatial distribution of current vectors detected by a current magnetic field on the order of nT.
  • this embodiment can improve the detection accuracy of the detection target.
  • the NV center 112 formed on the surface 111b of the diamond crystal 111 can be brought close to or in close contact with the detection target. According to this embodiment, it is possible to detect very weak minute current such as leakage.
  • the detection substrate 11 is scanned with fluorescence/excitation light by the light emitting element 21 and the light receiving element 22 of the detection device 1 . According to this embodiment, it is possible to detect changes in the direction or magnitude of the magnetic field generated in the detection target, and the spatial distribution of the current vector detected by the current magnetic field. According to this embodiment, it is possible to easily identify a complicated current magnetic field path, in other words, a current path or the like.
  • the dielectric substrate 13 is formed into a cylindrical shape that accommodates the detection substrate 11 . According to this embodiment, handling can be facilitated by unitizing the detector 10 .
  • the surface 111a of the diamond crystal 111 has an exposed portion 111c.
  • the light-emitting element 21 and the light-receiving element 22 can input/output fluorescence/excitation light to/from the surface 111a of the diamond crystal 111 of the detection substrate 11 of the detector 10 from the exposed portion 111c.
  • the surface 111b of the diamond crystal 111 is a smooth surface. According to this embodiment, the surface 111b of the diamond crystal 111 can be brought into close contact with or close to the surface to be detected at a level of several ⁇ m or less while being parallel to the surface to be detected. According to this embodiment, it is possible to detect a change in the direction or magnitude of a magnetic field of about several ⁇ m and a spatial distribution of a current vector detected by a current magnetic field of nT order.
  • the optical window 14 is housed in the dielectric substrate 13 and arranged to face the detection substrate 11 .
  • the detection board 11 can be protected from dust and the like.
  • FIG. 6 is a cross-sectional view for explaining the outline of the detection substrate of the detector according to the second embodiment.
  • FIG. 7 is a schematic diagram illustrating an example of a detector and a detection device according to the second embodiment.
  • FIG. 8 is a schematic diagram illustrating an example of a detection substrate.
  • symbol is attached
  • the diamond crystal 111 has a side length d11 of 1 mm, for example.
  • the diamond crystal 111 has a thickness d12 of 200 ⁇ m, for example.
  • the surface 111a is brought into contact with a contact portion 134 of the dielectric substrate 13, which will be described later.
  • FIG. 9 is a plan view explaining an example of an antenna conductor.
  • Antenna conductor 113 transmits microwaves to irradiate NV center 112 of diamond crystal 111 .
  • the antenna conductor 113 is located on the surface 111a of the diamond crystal 111 opposite to the surface 111b on which the NV center 112 is formed.
  • Antenna conductor 113 is interposed between solder 15 and surface 111 a of diamond crystal 111 .
  • the antenna conductor 113 is provided on the outer peripheral side of the surface 111a of the diamond crystal 111 .
  • the antenna conductor 113 is formed in a ring shape when viewed in the normal direction of the surface 111a (hereinafter referred to as “plan view”).
  • Antenna conductor 113 is a loop antenna formed of a conductive thin film. Antenna conductor 113 is formed in a ring shape with a part being opened. An end of the antenna conductor 113 is connected to the pad conductor 1142 of the high frequency line conductor 114 .
  • the antenna conductor 113 has a loop diameter of several millimeters.
  • the antenna conductor 113 is a minute loop antenna.
  • the antenna conductor 113 has a frequency of, for example, 2.8 GHz or more and 2.9 GHz or less.
  • the antenna conductor 113 has an input power of -20 dBm, for example.
  • the high-frequency line conductor 114 is formed on the surface 111a of the diamond crystal 111.
  • the high-frequency line conductor 114 has a center conductor and a ground conductor spaced a certain distance therefrom. Impedance is adjusted by the distance between the central conductor and the grounded conductor.
  • the center conductor and ground conductor are connected to the center conductor and ground conductor of the high-frequency line conductor (not shown) of the dielectric substrate 13 by soldering, respectively.
  • the antenna conductor 113 may be directly connected to the pad conductors 1141 and 1142 without providing a ground conductor for the high-frequency line conductor 114.
  • a surface electrode 23 is connected to the pad conductor 1141 via a wiring 1143 .
  • the pad conductor 1141 is made of gold, for example.
  • the pad conductor 1141 has a film thickness of, for example, 200 nm or more and 1000 nm or less.
  • the pad conductor 1142 is made of gold, for example.
  • the pad conductor 1142 has a film thickness of, for example, 200 nm or more and 1000 nm or less.
  • the oscillation element 31 is electrically connected to wiring on the dielectric substrate 13 .
  • Oscillating element 31 is in contact with dielectric substrate 13 .
  • Oscillating element 31 is located on surface 111a of diamond crystal 111 opposite to surface 11b on which NV center 112 is formed.
  • the oscillation element 31 is housed in the third housing portion 135 of the dielectric substrate 13 .
  • the oscillation element 31 may be wire-bonded or solder-ball-connected to the ground conductor of the dielectric substrate 13 .
  • the oscillation element 31 is electrically connected to the antenna conductor 113 of the detection substrate 11 at the contact portion 134 of the dielectric substrate 13 .
  • a high-frequency line conductor (not shown) of the dielectric substrate 13 a high-frequency line conductor 114 arranged on the surface 111a of the diamond crystal 111, and an antenna conductor 113 are electrically connected to the detection substrate 11 via solder. connected.
  • the dielectric substrate 13 has a first accommodation portion 131 , a second accommodation portion 132 and a third accommodation portion 135 .
  • the first accommodation portion 131 and the second accommodation portion 132 are continuous in the axial direction.
  • the first accommodating portion 131 and the second accommodating portion 132 penetrate through the dielectric substrate 13 from the surface 13a to the surface 13b.
  • the opening width of the first accommodation portion 131 is wider than the opening width of the second accommodation portion 132 .
  • a boundary portion between the first accommodation portion 131 and the second accommodation portion 132 has a contact portion 134 with a narrow opening width.
  • the first accommodating portion 131 is arranged on one side of the dielectric substrate 13 in the axial direction.
  • a light-emitting element 21 and a light-receiving element 22 are arranged in the first accommodation portion 131 .
  • the second housing portion 132 is a support portion that supports the detection substrate 11 .
  • the second accommodating portion 132 is arranged on the other side of the dielectric substrate 13 in the axial direction.
  • the detection substrate 11 is arranged in the central portion of the second housing portion 132 of the dielectric substrate 13 .
  • the third housing portion 135 is formed in a concave shape on the surface 13a of the dielectric substrate 13. As shown in FIG. The oscillation element 31 is arranged in the third accommodation portion 135 .
  • a lid may be provided on the first accommodating portion 131, the second accommodating portion 132, and the third accommodating portion 135 to hermetically seal the inside.
  • a lead terminal or a ball terminal may be provided on the dielectric substrate 13 .
  • FIG. 7 illustrates a configuration in which the surface 111b protrudes in the axial direction from the surface 13b of the dielectric substrate 13, the surface 111b and the surface 13b of the dielectric substrate 13 may be flat.
  • the solder is provided on the contact portion 134 of the dielectric substrate 13 .
  • the solder is provided in a ring shape in plan view.
  • the solder is electrically connected to the high-frequency line conductor 114 of the detection board 11 , the antenna conductor 113 , and the internal pattern of the dielectric substrate 13 .
  • the light emitting element 21 and the light receiving element 22 are arranged inside the ring shape of the antenna conductor 113 .
  • a light emitting portion and a light incident portion are arranged to face the surface 111a.
  • the light-emitting element 21 and the light-receiving element 22 are arranged in close contact with the exposed portion 111c of the surface 111a of the diamond crystal 111, as shown in FIG. 7, for example.
  • power is supplied to each of the light emitting element 21 and the light receiving element 22 from a pad conductor 1141 and a wiring 1143 formed independently of the dielectric substrate 13 .
  • the light-emitting element 21 and the light-receiving element 22 may be connected to the ground conductor of the dielectric substrate 13 by wire bonding or solder ball connection.
  • the light-emitting element 21 and the light-receiving element 22 may be arranged, for example, just above the exposed portion 111c of the surface 111a of the diamond crystal 111 with a certain distance therebetween.
  • optical components such as lenses, filters, isolators, mirrors, and antireflection films may be used between the light emitting element 21 and light receiving element 22 and the NV center 112 .
  • the light emitting element 21 and the light receiving element 22 have a side length d13 of, for example, 300 ⁇ m.
  • the light emitting element 21 and the light receiving element 22 have a thickness d14 of 100 ⁇ m, for example.
  • the surface electrode 23 is arranged on the surface 21b, which is the lower surface of the light emitting element 21, and the surface 22b, which is the lower surface of the light receiving element 22, respectively.
  • the surface electrode 23 is wire-bonded to the ground conductor of the dielectric substrate 13 .
  • the back surface electrode 24 is arranged on the surface 21a, which is the upper surface of the light emitting element 21, and the surface 22a, which is the upper surface of the light receiving element 22, respectively.
  • the back electrode 24 is wire-bonded to the ground conductor of the dielectric substrate 13 .
  • the upper surface of the light emitting element 21 and the upper surface of the light receiving element 22 are the surfaces of the light emitting element 21 and the light receiving element 22 opposite to the diamond crystal 111 .
  • the lower surface of the light emitting element 21 and the lower surface of the light receiving element 22 are surfaces of the light emitting element 21 and the light receiving element 22 on the diamond crystal 111 side.
  • the light input/output side surfaces of the light emitting element 21 and the light receiving element 22 face the NV center 112 .
  • the front surface electrode 23 and rear surface electrode 24 function as an anode electrode or a cathode electrode, respectively. Either of the surface electrode 23 and the back electrode 24 may be the anode electrode or the cathode electrode.
  • the light receiving element 22 is a diode such as a PD
  • the surface electrode 23 and the back surface electrode 24 function as an anode electrode or a cathode electrode, respectively. Either of the surface electrode 23 and the back electrode 24 may be the anode electrode or the cathode electrode.
  • the surface electrode 23 of the light emitting element 21 is connected to the pad conductor 1141 through the wiring 1143 .
  • Surface electrode 23 of light receiving element 22 is connected to pad conductor 1141 via wiring 1143 . Electrically, the pad conductor 1141 and the backside electrode 24 are connected to the semiconductor element in which the signal control section 200 (see FIG. 5) is formed.
  • the surface 100a of the dielectric 100 is brought close to or in close contact with the surface 111b of the diamond crystal 111, which is the magnetic field acting surface of the detection substrate 11 of the detection device 1.
  • FIG. 5 the microwave generated by the oscillation element 31 as the microwave source propagates to the antenna conductor 113 of the detection substrate 11 through a high-frequency transmission line (not shown) provided inside the dielectric substrate 13 .
  • Microwaves are radiated from the antenna conductor 113 .
  • the radiated microwaves then act on the NV center 112 to cause electron spin resonance.
  • a spatial change in the direction or magnitude of the magnetic field generated in the dielectric 100 acts on the NV center 112 near the surface 111b of the diamond crystal 111 of the detection substrate 11 of the detection device 1.
  • the detection substrate 11 is scanned with fluorescence/excitation light by the light-emitting element 21 and the light-receiving element 22 of the detection device 1 .
  • the green excitation light of the light emitting element 21 is incident on the surface 111b, which is the front surface, from the exposed portion 111c side of the surface 111a, which is the back surface, of the diamond crystal 111.
  • FIG. The green excitation light incident on the surface 111b side spreads and diffuses within the surface 111b of the diamond crystal 111, irradiates the NV center 112, and excites it.
  • the NV center 112 is irradiated and excited from the exposed portion 111c of the surface 111a of the diamond crystal 111 of the detection substrate 11 .
  • the excited NV center 112 emits red fluorescence, which is incident on the exposed portion 111c side of the surface 111a, which is the rear surface, from the surface 111b side, which is the front surface of the diamond crystal 111. Then, the light diffuses in the surface 111 a of the diamond crystal 111 and enters the light receiving surface of the light receiving element 22 .
  • the light-emitting element 21 and the light-receiving element 22 receive the electron spin resonance signal of the NV center 112 excited by the excitation light from the exposed portion 111c of the surface 111a of the diamond crystal 111 as fluorescence.
  • the light-emitting element 21 and the light-receiving element 22 receive fluorescence signals corresponding to changes in the direction or magnitude of the magnetic field.
  • the magnetic field to be measured acts on the NV center 112 to change the electron spin resonance frequency.
  • the red fluorescence intensity changes according to the change in the electron spin resonance frequency.
  • the detection device 1 detects the magnitude of the magnetic field by reading this. Further, the detection device 1 operates as a current sensor by measuring a magnetic field due to current.
  • An example of the application of the detection device 1 shown in FIG. 7 is a device for measuring charge/discharge current of a battery.
  • the semiconductor element in which the signal control section is formed and the semiconductor element in which the microwave source is formed are configured as a module integrated with the diamond crystal 111 .
  • the semiconductor element in which the microwave source is formed is illustrated as the oscillation element 31, but a separate semiconductor element in which a signal control section is formed may be provided.
  • the detection device 1 is formed by integrating the detector 10, the light emitting element 21, and the light receiving element 22.
  • the oscillation element 31 is electrically connected to wiring on the dielectric substrate 13 .
  • a magnetic sensor using a diamond crystal can be configured to be compact, simple, and robust.
  • the current integration can be detected with high accuracy.
  • errors are not accumulated when the secondary battery is repeatedly charged and discharged, and the charge amount of the storage battery can be accurately grasped or predicted.
  • the present embodiment can be suitably used for, for example, a storage battery system and an inverter system for an electric vehicle.
  • the oscillation element 31 is in contact with the dielectric substrate 13 .
  • a magnetic sensor using a diamond crystal can be miniaturized.
  • the oscillation element 31 is located on the surface 111a of the diamond crystal 111 opposite to the surface 11b on which the NV center 112 is formed, and is the magnetic field acting surface of the detection substrate 11 of the detection device 1. is not positioned on the side of the surface 111b. According to this embodiment, the surface 111b of the diamond crystal 111 of the detection device 1 can be brought close to or in close contact with the object to be detected.
  • the surface 111b of the diamond crystal 111 which is the magnetic field acting surface of the detection substrate 11 of the detection device 1, protrudes from the surface 13b of the dielectric substrate 13.
  • the surface 111b of the diamond crystal 111 of the detection device 1 can be brought close to or in close contact with the object to be detected.
  • the present embodiment can detect a change in the direction or magnitude of a magnetic field of about several ⁇ m, which has been difficult to detect in the past, and a current vector detected by a current magnetic field of nT order.
  • this embodiment can improve the detection accuracy of the detection target.
  • FIG. 10 is a plan view explaining another example of the antenna conductor.
  • the antenna conductor 113 shown in FIG. 10 is formed in a rectangular frame shape with one side open.
  • a light emitting element 21 and a light receiving element 22 are arranged inside the antenna conductor 113 .
  • FIG. 11 is a plan view explaining another example of the antenna conductor.
  • the antenna conductor 113 shown in FIG. 11 is formed in a rectangular frame shape.
  • a comb portion 115 is provided on a part of the antenna conductor 113 .
  • comb portion 115 comb portion 1151 having comb teeth extending from one side of the rectangle of antenna conductor 113 to the opposite side and comb portion 1152 having comb teeth extending from the opposite side to one side are meshed.
  • the comb portion 115 is a so-called IDT (Inter Digital Transducer) and constitutes a capacitance forming portion. Comb 1151 and comb 1152 form a capacitance.
  • Comb portion 1151 and comb portion 1152 can suppress reflection of microwaves of a specific frequency incident on antenna conductor 113 by adjusting the line and space and the logarithm of the electrodes.
  • the comb portion 115 it is possible to effectively radiate microwaves of about 3 GHz even if the antenna 113 is of a very small size, making it suitable for detecting microcircuits.
  • the antenna conductor 113 as a radiator has a first side having the first comb portion 1151 and a second side having the second comb portion 1152 .
  • the first comb portion 1151 and the second comb portion 1152 are arranged to mesh with each other to form a capacitance forming portion.
  • FIG. 12 is a graph illustrating an example of reflection characteristics of the antenna conductor 113.
  • FIG. 12 is an example of S 11 reflection characteristics viewed from pad conductor 1142 .
  • S 11 reflection characteristics shown in FIG. 12 reflection of microwaves of 2.7 to 2.9 GHz from the antenna conductor 113 is suppressed, and microwaves of 2.7 to 2.9 GHz from the antenna conductor 113 are effective. It can be seen that radiated to
  • a member or fluid with high relative magnetic permeability may be inserted between the detection substrate 11 of the detection device 1 and the detection target. Thereby, the detection accuracy can be further improved.
  • a member or fluid with high relative magnetic permeability may be inserted into the space located on the optical path of the fluorescence/excitation light. Thereby, the detection accuracy can be further improved.
  • a member or fluid having a high relative magnetic permeability may be inserted between the detection substrate 11 of the detection device 1 and the detection target. Thereby, the detection accuracy can be further improved.
  • a member or fluid with high relative magnetic permeability may be inserted into the space located on the optical path of the fluorescence/excitation light. Thereby, the detection accuracy can be further improved.
  • a high-frequency micro-signal may be input to the antenna conductor 113 through a fiber or the like instead of the dielectric substrate 13 described above.
  • An insulating film may be formed on the antenna conductor 113 described above, and another antenna conductor 113 may be laminated thereon. In this case, it can be operated at multiple frequencies. This facilitates measurement of electron spin resonance points at a plurality of points.
  • the NV center 112 is formed on one surface 111b of the diamond crystal 111, and the antenna conductor 113 is formed on the opposite surface 111a, but the present invention is not limited to this.
  • the NV center 112 and the antenna conductor 113 may be arranged on the surface 111a, and the NV center 112 and the antenna conductor 113 may be arranged on the surface 111b.
  • the above antenna conductor 113 may be configured as follows. An antenna conductor 113 is arranged on one surface of a separate substrate separate from the diamond crystal 111 . Then, one surface of the separate substrate is placed in close contact with the surface of the diamond crystal 111 . The antenna conductor 113 arranged in this way is also included in the radiator provided on the diamond crystal 111 .
  • the separate substrate is preferably, for example, a glass plate transparent to excitation light and fluorescence. A separate substrate made of a glass plate is placed on the surface 111a of the diamond crystal 111. As shown in FIG. Further, if a light receiving element 21 and a light emitting element 22 are arranged thereon, it is possible to input/output light through a separate substrate.
  • the separate substrate may be composed of, for example, a non-light-transmitting substrate that is not a glass plate.
  • a separate substrate which is a non-transparent substrate, is arranged on the surface 111a of the diamond crystal.
  • Light may be input/output to/from the light receiving element 21 and the light emitting element 22 from the lower side of the diamond crystal 111 .
  • Reference Signs List 1 detection device 10 detector 11 detection substrate 111 diamond crystal 111a, 111b surface 112 NV center 113 antenna conductor (radiator) 13 Dielectric Substrate 13a, 13b Surface 131 First Accommodating Part 132 Second Accommodating Part 133 Flange 14 Optical Window 14a, 14b Surface 15 Solder 16 Interior Pattern 17 RF Via 18 Bonding Pad 21 Light Emitting Element 22 Light Receiving Element 31 Oscillating Element (Micro wave source) 100 Dielectric 101, 102, 103, 104 Conductor 200 Signal Control Section 201 Control Section 202 Signal Processing Section F1, F2, F3, F4 Magnetic Field I1, I2, I3, I4 Current

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