WO2022230637A1 - 電子デバイス封止用組成物、電子デバイス封止膜形成方法及び電子デバイス封止膜 - Google Patents
電子デバイス封止用組成物、電子デバイス封止膜形成方法及び電子デバイス封止膜 Download PDFInfo
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- 150000003377 silicon compounds Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- ZWYDDDAMNQQZHD-UHFFFAOYSA-L titanium(ii) chloride Chemical compound [Cl-].[Cl-].[Ti+2] ZWYDDDAMNQQZHD-UHFFFAOYSA-L 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- GRXOWOKLKIZFNP-UHFFFAOYSA-N undecane-1,1-diol Chemical compound CCCCCCCCCCC(O)O GRXOWOKLKIZFNP-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 1
- OMQSJNWFFJOIMO-UHFFFAOYSA-J zirconium tetrafluoride Chemical compound F[Zr](F)(F)F OMQSJNWFFJOIMO-UHFFFAOYSA-J 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8423—Metallic sealing arrangements
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/05—Alcohols; Metal alcoholates
- C08K5/057—Metal alcoholates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/56—Organo-metallic compounds, i.e. organic compounds containing a metal-to-carbon bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/14—Homopolymers or copolymers of esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
Definitions
- the present invention relates to a composition for electronic device sealing, a method for forming an electronic device sealing film, and an electronic device sealing film.
- the present invention relates to a composition for encapsulating an electronic device, which has excellent encapsulation performance and, as a result, excellent luminous efficiency.
- organic electroluminescence devices (hereinafter also referred to as “organic EL devices” or “organic EL elements”) are manufactured using organic EL elements in order to prevent the organic materials and electrodes used from deteriorating due to moisture. It has been proposed to cover the surface of the with a sealing layer.
- the technique described in Patent Document 1 includes a monomer having no aromatic hydrocarbon group and a monomer having an aromatic hydrocarbon group, and has an aromatic hydrocarbon group.
- a display device is disclosed.
- the diffusion coefficient of the organic protective film is sufficiently low, so moisture permeation is a problem under severe conditions of high temperature and high humidity such as 85° C., 85% RH, and 100 hours or more.
- the sealing performance was poor, which affected the decrease in luminous efficiency.
- the stress difference between the organic protective film and the adjacent layer, lack of adhesive strength, and bending resistance during bending have also been regarded as problems.
- a curable resin composition for encapsulating electronic devices which is improved in flexibility, encapsulation performance and resin viscosity by adding (meth)acrylic oligomer, low-molecular-weight (meth)acrylate and moisture absorbent.
- (meth)acrylic oligomer low-molecular-weight (meth)acrylate and moisture absorbent.
- Patent Document 2 See Patent Document 2, for example.
- the technique disclosed in Patent Document 2 has a problem that nozzle clogging occurs during ink jet ejection due to the influence of the oligomer having a large molecular weight.
- the crosslink density is lowered, and the problem of water permeation remains in the thin film region.
- a (meth)acrylate compound (A) having an aromatic hydrocarbon skeleton a (meth)acrylate compound having an aromatic hydrocarbon skeleton other than the compound (A), and a (meth)acrylate compound having an alicyclic hydrocarbon skeleton
- At least one (meth)acrylate compound (B) selected from the group consisting of an acrylate compound and a (meth)acrylate compound having a heterocyclic skeleton, and a polymerization initiator (C) thereby improving sealing performance
- a resin composition with improved curability, visible light transmittance and cure shrinkage has been disclosed (see, for example, Patent Document 3).
- an object of the present invention is to provide an electronic device encapsulating composition, a method for forming an electronic device encapsulating film, and an electronic device encapsulating film that are excellent in luminous efficiency.
- the present inventors have found that, in addition to the metal-containing compound (C), a chain (meth)acrylate monomer ( By containing A1) and a chain-like (meth)acrylate monomer (A2) having a specific structure, it is possible to provide an electronic device encapsulating composition that is excellent in inkjet dischargeability, bending resistance, and encapsulating performance. I found that it can be done and arrived at the present invention. That is, the above problems related to the present invention are solved by the following means.
- An electronic device sealing composition containing a photocurable monomer (A) and a photopolymerization initiator (B),
- the photocurable monomer (A) contains at least a chain (meth)acrylate monomer (A1) and a chain (meth)acrylate monomer (A2), the chain (meth)acrylate monomer (A2) has at least one of a phenyl group, a heterocyclic group or a cycloalkyl group, Furthermore, it contains a metal-containing compound (C), A composition for sealing an electronic device, wherein the metal-containing compound (C) contains at least one of metal alkoxides, metal chelates, silane compounds, silazane compounds and metal halides.
- metals constituting the metal alkoxide, the metal chelate and the metal halide are selected from Ti, Si, Al and Zr. 1. Electronic device sealing composition according to item 1.
- An electronic device sealing film for sealing an electronic device, a first encapsulation layer containing silicon nitride, silicon oxide or silicon oxynitride; and a second sealing layer using the electronic device sealing composition according to any one of items 1 to 6.
- An electronic device sealing film for sealing an electronic device, a first encapsulation layer containing silicon nitride, silicon oxide or silicon oxynitride; and a second sealing layer using the electronic device sealing composition according to any one of items 1 to 6.
- the electronic device sealing film according to item 10 further comprising a third sealing layer containing silicon nitride, silicon oxide or silicon oxynitride on the second sealing layer.
- a composition for sealing an electronic device which has good ejection property by inkjet, excellent bending resistance, and excellent sealing performance by preventing moisture permeation, and as a result, excellent luminous efficiency
- a method for forming an electronic device sealing film and an electronic device sealing film can be provided.
- the metal and ligand contained in the metal-containing compound (C) react with water to suppress movement of water and prevent diffusion, thereby suppressing water permeation. Further, by using a combination of the chain-like (meth)acrylate monomers (A1) and (A2), the dispersibility of the metal-containing compound (C) is improved. It can be expressed uniformly. As a result, moisture permeation can be suppressed, and sealing performance is excellent.
- the interaction with the adjacent layer is strengthened.
- the interaction between the second sealing layer and the first and third sealing layers adjacent to the second sealing layer is strengthened and the adhesion is improved.
- the resistance to stress between layers generated by bending is increased, and the resistance to bending is improved.
- the metal-containing compound (C) prevents water from diffusing, reliability can be ensured even with a thin film, and if the film is thin, the stress when bent is low, and delamination is reduced. Also in this respect, the bending resistance is improved.
- the sealing layer containing the chain-like (meth)acrylate monomers (A1) and (A2) bends. Can give endurance.
- the electronic device sealing composition of the present invention is an electronic device sealing composition containing a photocurable monomer (A) and a photopolymerization initiator (B), wherein the photocurable monomer (A) is , containing at least a chain-like (meth)acrylate monomer (A1) and a chain-like (meth)acrylate monomer (A2), wherein the chain-like (meth)acrylate monomer (A2) is a phenyl group, a heterocyclic ring or a cycloalkyl group, and further contains a metal-containing compound (C), wherein the metal-containing compound (C) is a metal alkoxide, a metal chelate, a silane-based compound, a silazane-based compound and It contains at least one metal halide.
- This feature is a technical feature common to or corresponding to each of the following embodiments.
- At least one of the linear (meth)acrylate monomer (A1) and the linear (meth)acrylate monomer (A2) has a molecular weight within the range of 100 to 1000. preferable.
- the ink jetting property is excellent, and since the molecular weight is low in the range of 100 to 1,000, it is possible to form a high-density network with high crosslinkability, thereby improving the sealing performance.
- the chain-shaped (meth)acrylate monomer (A1) preferably has an alkylene skeleton or an ethylene oxide skeleton from the viewpoint of inkjet ejection property and bending resistance.
- the metals constituting the metal alkoxide, the metal chelate and the metal halide are selected from Ti, Si, Al and Zr. It is preferable in terms of suppressing permeation and having excellent sealing performance.
- the content of the chain-shaped (meth)acrylate monomer (A1) with respect to the entire electronic device sealing composition is in the range of 55 to 95% by mass. is preferable.
- the content of the chain (meth)acrylate monomer (A2) with respect to the entire electronic device sealing composition is in the range of 5 to 45% by mass. It is preferable in terms of bending resistance.
- the method for forming an electronic device sealing film of the present invention is a method for forming a sealing film using the electronic device sealing composition, wherein the first sealing layer is formed on the electronic device by a vapor phase method. and forming a second sealing layer by applying the electronic device sealing composition onto the first sealing layer.
- a step of forming a third sealing layer on the second sealing layer by a vapor phase method in terms of better sealing performance.
- the step of forming the second sealing layer uses an ink jet method in that the layer can be formed with high accuracy.
- the electronic device encapsulation film of the present invention is an electronic device encapsulation film for encapsulating an electronic device, comprising a first encapsulation layer containing silicon nitride, silicon oxide or silicon oxynitride; and a second encapsulation layer using the composition.
- a third sealing layer containing silicon nitride, silicon oxide, or silicon oxynitride on the second sealing layer from the viewpoint of excellent sealing performance.
- the photocurable monomer (A) is at least a chain (meth)acrylate monomer (A1). , and a chain (meth)acrylate monomer (A2), wherein the chain (meth)acrylate monomer (A2) has at least one of a phenyl group, a heterocyclic group, and a cycloalkyl group.
- the metal-containing compound (C) contains at least one of a metal alkoxide, a metal chelate, a silane-based compound, a silazane-based compound, and a metal halide.
- (meth)acrylate means at least one of acrylate and methacrylate.
- electronic device refers to an element that generates, amplifies, converts, or controls an electrical signal using the kinetic energy or potential energy of electrons. Examples thereof include active elements such as light-emitting diode elements, organic electroluminescence elements, photoelectric conversion elements, and transistors.
- electronic devices include passive elements such as resistors and capacitors that perform passive tasks such as “resisting" and "storing” in response to actions from others. Therefore, the sealing composition of the present invention is used to form a sealing film for sealing the electronic device described above.
- the photocurable monomer (A) means a photocurable monomer capable of undergoing a curing reaction with a photopolymerization initiator.
- a photocurable monomer a non-silicon monomer containing no silicon (Si) may be used, for example, a monomer consisting only of an element selected from C, H, O, N or S. Good, but not limited to this.
- the photo-curable monomer may be used after being synthesized by an ordinary synthesis method, or may be used by purchasing a commercially available product.
- the photocurable monomer (A) contains at least a chain (meth)acrylate monomer (A1) and a chain (meth)acrylate monomer (A2).
- chain-like (meth)acrylate monomer (A1) means that two or more carbon atoms are in a row when focusing on the longest continuous carbon atom in the molecule.
- chain (or acyclic) monomers monomers containing linear and branched structures linked to are free of cyclic structures.
- An atom selected from O, N, or S may be included in the chain skeleton.
- the chain skeleton may contain an ether bond, a sulfide bond, or the like.
- a chain (meth)acrylate monomer (A1) As such a chain (meth)acrylate monomer (A1) according to the present invention, a substituted or unsubstituted C2-C20 (having 2 to 20 carbon atoms) alkyl group, a substituted or unsubstituted C2-C20 alkyl mono(meth)acrylates, di(meth)acrylates, tri(meth)acrylates, tetra(meth)acrylates having silyl groups, substituted or unsubstituted C2-C20 alkylene groups, amine groups, ethylene oxide groups, etc.; .
- the chain-like (meth)acrylate monomer (A1) has an alkylene skeleton or an ethylene oxide skeleton from the viewpoint of inkjet dischargeability and bending resistance.
- the ethylene oxide skeleton is a unit of two carbon chains and one oxygen, and may have a ring or may be ring-opened.
- the chain (meth)acrylate monomer (A1) includes methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxybutyl ( Inhibitors containing (meth)acrylic acid esters such as meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, nonyl (meth)acrylate, decanyl (meth)acrylate, undecanyl (meth)acrylate, dodecyl (meth)acrylate, etc.
- saturated carboxylic acid esters unsaturated carboxylic acid aminoalkyl esters such as 2-aminoethyl (meth)acrylate and 2-dimethylaminoethyl (meth)acrylate; saturated or unsaturated carboxylic acid vinyl esters such as vinyl acetate; (meth)acrylonitrile Vinyl cyanide compounds such as; (meth) unsaturated amide compounds such as acrylamide; ethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tripropylene glycol diacrylate, tetraethylene glycol di (meth) acrylate, Pentaethylene glycol di(meth)acrylate, hexaethylene glycol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate , 1,10-decanediol diacrylate,
- the content of the linear (meth)acrylate monomer (A1) with respect to the entire sealing composition is preferably within the range of 55 to 95% by mass, more preferably within the range of 60 to 90% by mass.
- chain-like (meth)acrylate monomer (A2) means that two or more carbon atoms are in a row when focusing on where carbon atoms are continuously connected for the longest time in the molecule.
- it has a phenyl group it has one phenyl group and does not include the case of having two or more phenyl groups.
- an atom selected from O, N or S may be included in the chain skeleton.
- the chain skeleton may contain an ether bond, a sulfide bond, or the like.
- the heterocyclic group may be a heterocyclic group having aromaticity or a heterocyclic group having no aromaticity (e.g., having a heteroatom in the cycloalkyl skeleton). good.
- the (meth)acrylate monomers having a cycloalkyl group are mono(meth)acrylates, di(meth)acrylates having a substituted or unsubstituted C3 to C20 cycloalkyl group.
- ) acrylate, tri(meth)acrylate, tetra(meth)acrylate, etc. and refers to a monomer having a cyclopentane skeleton, cyclohexane skeleton, cycloheptane skeleton, dicyclodecane structure, tricyclodecane ring, adamantane ring, or isobornyl ring in the skeleton. .
- alicyclic (meth)acrylate such as isobornyl (meth)acrylate, dicyclopentanyl (meth)acrylate, dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, cyclohexyl (meth)acrylate, etc.
- Bifunctional or higher polyfunctional (meth)acrylate compounds may include, but are not limited to, alicyclic (meth)acrylates such as tricyclodecanedimethanol (meth)acrylate and mixtures thereof.
- the (meth)acrylate monomer having a heterocyclic group refers to a monomer having a heterocyclic (heterocyclic) skeleton.
- heterocyclic (heterocyclic) skeleton examples include a dioxane structure, a trioxane structure, an isocyanurate structure, and the like.
- the (meth)acrylate monomer having a heterocyclic group includes tetrahydrofurfuryl (meth)acrylate, alkoxylated tetrahydrofurfuryl acrylate caprolactone-modified tetrahydrofurfuryl (meth)acrylate, morpholine (meth)acrylate, isocyanuric acid EEO-modified Diacrylate (M-215), ⁇ -caprolactone-modified tris(acryloxyethyl) isocyanurate (M-327), isocyanuric acid EO-modified di- and triacrylates (M-313 or M-315), hydroxypivalaldehyde-modified tris Methylolpropane diacrylate (R-604), pentamethylpiperidinyl methacrylate (FA-711), tetramethylpiperidinyl methacrylate (FA-712HM), cyclic trimethylolpropane formal acrylate (SR531) or mixture
- the (meth)acrylate monomers having one phenyl group include benzyl (meth)acrylate, ethoxy-modified cresol (meth)acrylate, propoxy-modified cresol (meth)acrylate.
- acrylate neopentyl glycol benzoate (meth) acrylate, phenoxyethyl (meth) acrylate, phenoxydiethylene glycol (meth) acrylate, phenoxy-polyethylene glycol (meth) acrylate, 2-hydroxy-3-phenoxypropyl (meth) acrylate, 2- Acryloyloxyethyl-phthalate, neopentyl glycol-acrylic acid-benzoate, nonylphenol ethylene oxide acrylate, nonylphenol propylene oxide acrylate, or mixtures thereof.
- the content of the linear (meth)acrylate monomer (A2) with respect to the entire sealing composition is preferably in the range of 5 to 45% by mass, more preferably in the range of 10 to 40% by mass.
- At least one of the chain-like (meth)acrylate monomer (A1) and the chain-like (meth)acrylate monomer (A2) preferably has a molecular weight within the range of 100 to 1,000. It is more preferable to be within the range from the viewpoint of inkjet dischargeability and moisture permeability.
- Metal-containing compound (C) is used as a generic term for inorganic compounds and organic compounds containing metals.
- an organic compound containing a metal such as an organometallic compound and an organometallic complex.
- the metal-containing compound (C) used in the present invention includes metal alkoxides, metal chelates (also referred to as "(metal) chelate complexes"), silane-based compounds, silazane-based compounds and metal halogens. Selected from fossils.
- Examples of the metal M constituting the metal-containing compound (C) include Ti, Si, Al, Zr, silicon, bismuth, strontium, calcium, copper, sodium, and lithium. Also included are cesium, magnesium, barium, vanadium, niobium, chromium, tantalum, tungsten, chromium, indium, and iron. At least one of Ti, Si, Al and Zr is particularly preferable.
- metal-containing compound (C) examples include tetrachlorosilane, methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, phenyltrichlorosilane, methyltrimethoxysilane, dimethyldimethoxysilane, phenyltrimethoxysilane, tetraethoxysilane, methyltriethoxysilane, dimethyldiethoxysilane, phenyltrichlorosilane, ethoxysilane, n-propyltrimethoxysilane, n-propyltriethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane, decyltrimethoxysilane, decyltrimethoxysilane, trifluoropropyltrimethoxysilane, hexyltrimethoxysilane, hexyl
- organic titanium compounds having structures represented by the following general formulas (II) to (IV) may be used.
- R represents an alkyl group.
- organic zirconium compounds having structures represented by the following general formulas (V) to (VII) may be used.
- R represents an alkyl group.
- organoaluminum compounds having structures represented by the following general formulas (VIII) to (X) may be used.
- R represents an alkyl group.
- zirconium tetra-normal propoxide zirconium tetra-normal butoxide, zirconium tetraacetylacetonate, zirconium tributoxy monoacetylacetonate, zirconium monobutoxy acetylacetonate bis(ethylacetoacetate), zirconium dibutoxy bis(ethylacetoacetate)
- examples include organic zirconium compounds such as zirconium tetraacetylacetonate, zirconium tributoxy monostearate zirconium, (methyl 2-hydroxyisobutyrate), zirconium (cis-2-butene-1,4-diol), and the like.
- metal halides such as titanium dichloride, titanium trichloride, titanium tetrachloride, titanium fluoride, zirconium chloride, zirconium fluoride, aluminum chloride, aluminum fluoride and the like are included.
- metal-containing compound (C) examples include tetra(2-ethylhexyl) titanate (product name TA30, manufactured by Matsumoto Fine Chemicals Co., Ltd.), aluminum sec-butylate (manufactured by Kawaken Fine Chemicals Co., Ltd.), and cyclic aluminum oxide isopropylate (Kawaken Fine Chemicals Co., Ltd.).
- the content of the metal-containing compound (C) with respect to the entire sealing composition is not limited as long as the sealing composition maintains the function of photocuring, but is in the range of 0.1 to 15% by mass. It is preferably within the range of 5 to 10% by mass.
- the metal-containing compound (C) may be partially transformed into an oxide or hydroxide containing the metal M. From the viewpoint of transparency, the molar fraction of these metal M oxides or hydroxides with respect to the metal-containing compound (C) is in the range of 0.01 to 0.1 [mol/mol]. preferable.
- the photopolymerization initiator (B) is not particularly limited as long as it is a normal photopolymerization initiator capable of photocuring reaction.
- the photopolymerization initiator (B) may include, for example, triazine-based, acetophenone-based, benzophenone-based, thioxanthone-based, benzoin-based, phosphorus-based, oxime-based, or mixtures thereof.
- Triazine initiators include 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-bis(trichloromethyl)-s-triazine, 2-(3′,4′-dimethoxystyryl)-4 ,6-bis(trichloromethyl)-s-triazine, 2-(4′-methoxynaphthyl)-4,6-bis(trichloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6- bis(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6-bis(trichloromethyl)-s-triazine, 2-biphenyl-4,6-bis(trichloromethyl)-s-triazine, Bis(trichloromethyl)-6-styryl-s-triazine, 2-(naphth-1-yl)-4,6-bis(trichloromethyl)-s
- Acetophenone initiators include 2,2′-diethoxyacetophenone, 2,2′-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, pt-butyltrichloroacetophenone, pt-butyldichloroacetophenone , 4-chloroacetophenone, 2,2′-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4-(methylthio)phenyl)-2-morpholinopropan-1-one, 2-benzyl-2-dimethylamino -1-(4-morpholinophenyl)-butan-1-one, and mixtures thereof.
- Benzophenone initiators include benzophenone, benzoylbenzoic acid, methyl benzoylbenzoate, 4-phenylbenzophenone, hydroxybenzophenone, acrylated benzophenone, 4,4′-bis(dimethylamino)benzophenone, 4,4′-dichlorobenzophenone, 3 , 3′-dimethyl-2-methoxybenzophenone or a mixture thereof.
- the thioxanthone-based initiator may be thioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthone, 2-chlorothioxanthone, or a mixture thereof.
- the benzoin-based initiator may be benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyl dimethyl ketal, or mixtures thereof.
- the phosphorus initiator may be bisbenzoylphenylphosphine oxide, benzoyldiphenylphosphine oxide, or a mixture thereof.
- the oxime series includes 2-(o-benzoyloxime)-1-[4-(phenylthio)phenyl]-1,2-octanedione and 1-(o-acetyloxime)-1-[9-ethyl-6-( 2-methylbenzoyl)-9H-carbazol-3-yl]ethanone, or mixtures thereof.
- the photopolymerization initiator (B) contains the photocurable monomer (A) (chain (meth)acrylate monomers (A1) and (A2)) and the photopolymerization initiator in the sealing composition of the present invention. It is preferably included in the range of about 0.1 to 20 parts by mass per 100 parts by mass of (B). Within the above range, sufficient photopolymerization occurs during exposure, and it is possible to prevent a decrease in transmittance due to the remaining unreacted initiator after photopolymerization. Specifically, the photopolymerization initiator is preferably contained in the range of 0.5 to 10 parts by weight, more specifically 1 to 8 parts by weight.
- the photopolymerization initiator is preferably contained in the sealing composition of the present invention within a range of 0.1 to 10% by mass based on the solid content, more preferably 0.1% by mass. It is within the range of ⁇ 8% by mass. By setting the content within the above range, photopolymerization can occur sufficiently, and a decrease in transmittance due to the remaining unreacted initiator can be prevented.
- a carbazole-based, diketone, sulfonium-based, iodonium-based, diazo-based, biimidazole-based photoacid generator or photopolymerization initiator may be used instead of the photopolymerization initiator.
- the sealing composition of the present invention contains other components including an antioxidant, a thermal stabilizer, a photosensitizer, a dispersant, a thermal cross-linking agent and a surfactant within the range in which the effects of the present invention can be obtained. It may contain further. These components may be contained singly or in combination of two or more in the sealing composition of the present invention.
- the antioxidant can improve the thermal stability of the sealing layer.
- the antioxidant may contain one or more selected from the group consisting of phenol, quinone, amine and phosphite, but is not limited thereto.
- antioxidants include tetrakis[methylene(3,5-di-t-butyl-4-hydroxyhydrocinnamate)]methane, tris(2,4-di-tert-butylphenyl)phosphite, and the like. be able to.
- the antioxidant is contained in the sealing composition in a range of 0.01 to 3 parts by mass with respect to a total of 100 parts by mass of the photocurable monomer and the photopolymerization initiator. More preferably, it is contained within the range of 0.01 to 1 part by mass. By setting it within the above range, excellent thermal stability can be exhibited.
- the heat stabilizer is contained in the sealing composition and suppresses the change in viscosity of the sealing composition at room temperature
- ordinary heat stabilizers can be used without limitation.
- thermal stabilizers sterically hindered phenolic thermal stabilizers may be used, specifically poly(di-cyclopentadiene-co-p-cresol), octadecyl-3 -(3,5-di-tert-butyl-4-hydroxyphenyl)propionate, 2,6-di-tert-butyl-4-methylphenol, 2,2′-methano-bi(4-methyl-6-tert -butyl-phenol), 6,6′-di-tert-butyl-2,2′-thiodi-p-cresol, tris(4-tert-butyl-3-hydroxy-2,6-dimethylbenzyl)isocyanurate, triethylene glycol-bis(3-tert-butyl-4-hydroxy-5-methylphenyl), 4,4'-thi
- the amount of the heat stabilizer in the sealing composition is 2000 ppm or less, preferably in the range of 0.01 to 2000 ppm with respect to the total of the photocurable monomer and the photopolymerization initiator based on the solid content. more preferably within the range of 100 to 1000 ppm. Within the above range, the heat stabilizer can further improve the storage stability and processability of the sealing composition in a liquid state.
- the photosensitizer has the function of transferring the energy of the absorbed light energy to the photopolymerization initiator, so even if the photopolymerization initiator used does not have absorption corresponding to the light from the light source, the original photopolymerization It is a compound that can have an initiator function.
- photosensitizers include anthracene derivatives such as 9,10-dibutoxyanthracene; benzoin derivatives such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and benzoin isobutyl ether; Benzophenone, methyl o-benzoylbenzoate, 4-phenylbenzophenone, 4-benzoyl-4'-methyl-diphenylsulfide, 3,3',4,4'-tetra(t-butylperoxycarbonyl)benzophenone, 2,4 ,6-trimethylbenzophenone, 4-benzoyl-N,N-dimethyl-N-[2-(1-oxo-2-propenyloxy)ethyl]benzenemethanaminium bromide, (4-benzoylbenzyl)trimethylammonium chloride and the like benzophenone derivatives; 2-isopropylthi
- the sealing composition of the present invention is preferably cured by irradiating ultraviolet rays within the range of 10 to 500 mW/cm 2 for 1 to 100 seconds, but is not limited thereto.
- the ultraviolet light it is preferable to use a 395 nm LED from the viewpoint of preventing deterioration of electronic devices.
- the viscosity of the sealing composition of the present invention is preferably within the range of 3 to 20 mPa ⁇ s from the viewpoint of further enhancing ejection properties from an inkjet head. It is preferable that the surface tension is 15 mN/m or more and less than 45 mN/m from the viewpoint of further enhancing the ejection performance from the inkjet head.
- the viscosity of the sealing composition of the present invention can be determined, for example, by measuring the temperature change of the dynamic viscoelasticity of the sealing composition with various rheometers.
- these viscosities are values obtained by the following method.
- the sealing composition of the present invention is set in a stress-controlled rheometer Physica MCR300 (cone plate diameter: 75 mm, cone angle: 1.0°) manufactured by Anton Paar. Next, the sealing composition was heated to 100° C. and cooled to 20° C. under the conditions of a cooling rate of 0.1° C./s, a strain of 5%, and an angular frequency of 10 radian/s. to obtain the temperature change curve of dynamic viscoelasticity.
- the sealing composition of the present invention may contain pigment particles.
- the pigment particles should have an average particle diameter within the range of 0.08 to 0.5 ⁇ m from the viewpoint of enhancing ejection properties from an inkjet head. It is preferable that the maximum particle size is in the range of 0.3 to 10 ⁇ m.
- the average particle size of pigment particles in the present invention means a value obtained by a dynamic light scattering method using Datasizer Nano ZSP, manufactured by Malvern. Since the sealing composition containing the colorant has a high concentration and does not transmit light with this measuring instrument, the sealing composition is diluted 200 times before measurement. The measurement temperature is normal temperature (25°C).
- the sealing composition of the present invention has a density ⁇ , a surface tension ⁇ of the sealing composition, a viscosity ⁇ of the sealing composition, and an Ohnesorge It is preferable that the number (Oh) is within the range of 0.1 to 1 from the viewpoints of jetting properties of the inkjet and stabilization of droplets when the ink flies.
- the sealing composition of the present invention prefferably to provide a cured polymer having a Tg (glass transition point) of 80°C or higher in the film after polymerization.
- the Tg of the film after polymerization is preferably 80° C. or higher from the viewpoint of ensuring stability in the electronic device formation process, driving temperature, and reliability test.
- the method for forming an electronic device sealing film of the present invention is a method of forming a sealing film using the electronic device sealing composition of the present invention. forming a stop layer; and forming a second sealing layer by applying the electronic device sealing composition onto the first sealing layer.
- the first sealing layer forming step forms a first sealing layer on the electronic device by a vapor phase method.
- the gas phase method includes sputtering (for example, magnetron cathode sputtering, flat plate magnetron sputtering, bipolar AC flat plate magnetron sputtering, bipolar AC rotary magnetron sputtering, including reactive sputtering), vapor deposition (for example, resistance heating).
- the first encapsulation layer contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.) or silicon oxynitride.
- the thickness of the first sealing layer is, for example, preferably in the range of 10-1000 nm, more preferably in the range of 100-500 nm.
- the second sealing layer is formed by applying the sealing composition of the present invention on the first sealing layer. Specifically, on the first sealing layer, the sealing composition is applied (coating step), and the obtained coating film is irradiated with vacuum ultraviolet rays in a nitrogen atmosphere to perform a modification treatment. may have.
- any appropriate method can be employed as a method for applying the sealing composition, and examples thereof include spin coating, roll coating, flow coating, ink jet, spray coating, printing, and dip coating. , a casting method, a bar coating method, a gravure printing method, and the like.
- the inkjet method is preferable in that fine patterning, which is required when sealing electronic devices such as organic EL elements, can be performed on demand.
- a known method can be used as the ink jet method.
- the inkjet method is roughly divided into two types, the drop-on-demand method and the continuous method, both of which can be used.
- Drop-on-demand methods include electro-mechanical conversion methods (e.g., single cavity type, double cavity type, bender type, piston type, shear mode type, shared wall type, etc.) and electro-thermal conversion methods (e.g., thermal inkjet type, bubble jet (registered trademark) type, etc.), electrostatic attraction type (eg, electric field control type, slit jet type, etc.), discharge type (eg, spark jet type, etc.), and the like.
- an electro-mechanical conversion type or an electro-thermal conversion type head From the viewpoint of the cost and productivity of the inkjet head, it is preferable to use an electro-mechanical conversion type or an electro-thermal conversion type head.
- a method of dropping liquid droplets (for example, a coating liquid) by an inkjet method is sometimes called an “inkjet method”.
- the sealing composition it is preferable to apply the sealing composition under a nitrogen atmosphere.
- Modification treatment process In the modification treatment step, after the coating step, the obtained coating film may be subjected to a modification treatment by irradiating vacuum ultraviolet rays in a nitrogen atmosphere.
- Modification treatment means conversion reaction of polysilazane to silicon oxide or silicon oxynitride.
- the reforming treatment is similarly performed in a nitrogen atmosphere such as in a glove box or under reduced pressure.
- a known method based on conversion reaction of polysilazane can be selected.
- the conversion reaction using plasma, ozone, or ultraviolet rays which enables the conversion reaction at a low temperature, is preferred. Conventionally known methods can be used for plasma and ozone.
- the second sealing layer according to the present invention it is preferable to form the second sealing layer according to the present invention by providing the coating film and subjecting it to modification treatment by irradiating it with vacuum ultraviolet light (also referred to as VUV) having a wavelength of 200 nm or less. .
- VUV vacuum ultraviolet light
- the thickness of the second sealing layer is preferably in the range of 0.5-20 ⁇ m, more preferably in the range of 3-10 ⁇ m.
- the entire layer may be modified, but the modified layer preferably has a thickness of 1 to 50 nm, more preferably 1 to 30 nm. More preferably within the range.
- the illuminance of the vacuum ultraviolet rays on the surface of the coating film that the coating film receives is preferably in the range of 30 to 200 mW/cm 2 , more preferably 50 to 160 mW/cm 2 . is more preferably within the range of
- the reforming efficiency can be sufficiently improved. It is preferable because it can also reduce the damage of
- the amount of irradiation energy of the vacuum ultraviolet rays on the coating film surface is preferably within the range of 1 to 10 J/cm 2 , and from the viewpoint of barrier properties and wet heat resistance for maintaining the desiccant function, 3. More preferably in the range of ⁇ 7 J/cm 2 .
- a rare gas excimer lamp is preferably used as the vacuum ultraviolet light source. Since the vacuum ultraviolet light is absorbed by oxygen, the efficiency of the vacuum ultraviolet irradiation step tends to decrease. Therefore, it is preferable to irradiate the vacuum ultraviolet light in a state where the oxygen concentration is as low as possible. That is, the oxygen concentration during vacuum ultraviolet light irradiation is preferably in the range of 10 to 10000 ppm, more preferably in the range of 50 to 5000 ppm, still more preferably in the range of 80 to 4500 ppm, most preferably 100 to 1000 ppm. is within the range of
- the modification treatment can also be performed in combination with heat treatment.
- Heating conditions are preferably in the range of 50 to 300° C., more preferably in the range of 60 to 150° C., preferably 1 second to 60 minutes, more preferably 10 seconds to 10 minutes, in combination with heat treatment.
- the heat treatment for example, a method of heating the coating film by heat conduction by bringing the substrate into contact with a heating element such as a heat block, a method of heating the atmosphere with an external heater such as a resistance wire, and an infrared region such as an IR heater. and the like, but are not particularly limited. Moreover, a method that can maintain the smoothness of the coating film containing the silicon compound may be appropriately selected.
- the third sealing layer forming step forms a third sealing layer on the second sealing layer by a vapor phase method.
- a vapor phase method sputtering methods (for example, magnetron cathode sputtering, flat plate magnetron sputtering, bipolar AC flat plate magnetron sputtering, bipolar AC rotating magnetron sputtering, etc.) are used in the same manner as the vapor phase method used in the first sealing layer forming step.
- the third encapsulation layer contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.) or silicon oxynitride.
- the thickness of the third sealing layer is, for example, preferably in the range of 10-1000 nm, more preferably in the range of 100-500 nm.
- a conductive film for a touch sensor may be further formed after forming the sealing film.
- the conductive film is, for example, a metal compound film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), or a highly flexible graphene film or metal nanowire film (for example, silver nanowire or copper nanowire film). films containing wires), metal nanoparticle films (for example, films containing silver nanoparticles or copper nanoparticles).
- it may be composed of a laminated film of a plurality of metals such as Al film/Ti film/Al film.
- the electronic device sealing film of the present invention is an electronic device sealing film for sealing an electronic device, comprising a first sealing layer containing silicon nitride, silicon oxide or silicon oxynitride; and a second encapsulation layer using a device encapsulation composition.
- the electronic device sealing film of the present invention is formed by the method for forming an electronic device sealing film. That is, the second encapsulating layer is formed using the electronic device encapsulating composition of the present invention.
- the electronic device sealing film of the present invention preferably has a third sealing layer containing silicon nitride, silicon oxide or silicon oxynitride on the second sealing layer.
- the first sealing layer is a layer formed on the electronic device by the vapor phase method described above. Specifically, it contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.
- a second sealing layer is provided adjacent to the first sealing layer, and is formed by applying the sealing composition onto the first sealing layer. Therefore, the second sealing layer contains at least a chain-like (meth)acrylate monomer (A1), a polymer composed of a chain-like (meth)acrylate monomer (A2), and a metal-containing compound (C).
- A1 chain-like (meth)acrylate monomer
- A2 polymer composed of a chain-like (meth)acrylate monomer
- C metal-containing compound
- the second sealing layer contains the polymer and the metal-containing compound (C)
- various conventionally known analytical methods such as chromatography, infrared spectroscopy, ultraviolet - Visible spectroscopy, nuclear magnetic resonance spectroscopy, X-ray diffraction, mass spectroscopy, X-ray photoelectron spectroscopy, etc. can be used.
- the content of the polymer in the second sealing layer is preferably within the range of 85 to 99.9% by mass, more preferably within the range of 90 to 95% by mass.
- the content of the metal-containing compound (C) in the second sealing layer is preferably within the range of 0.1 to 15% by mass, more preferably within the range of 5 to 10% by mass.
- the metal-containing compound (C) in the second sealing layer may partially transform into an oxide or hydroxide containing the metal M. From the viewpoint of transparency, the molar fraction of these metal M oxides or hydroxides with respect to the metal-containing compound (C) is in the range of 0.01 to 0.1 [mol/mol]. preferable.
- the third sealing layer is a layer provided adjacent to the second sealing layer and formed by the vapor phase method described above. Specifically, like the first sealing layer, it contains silicon nitride (SiN), silicon oxide (silicon monoxide, silicon dioxide, etc.), or silicon oxynitride.
- Examples of electronic devices to be sealed in the electronic device sealing film forming method and electronic device sealing film of the present invention include organic EL elements, LED elements, liquid crystal display elements (LCD), thin film transistors, touch panels, and electronic paper. , solar cells (PV), and the like. From the viewpoint that the effects of the present invention can be obtained more efficiently, an organic EL element, a solar cell, or an LED element is preferable, and an organic EL element is particularly preferable.
- the organic EL element employed as the electronic device according to the present invention may be of the bottom emission type, that is, one in which light is extracted from the transparent base material side.
- the bottom emission type is configured by laminating a transparent electrode as a cathode, a light emitting functional layer, and a counter electrode as an anode in this order on a transparent substrate.
- the organic EL element according to the present invention may be of a top emission type, that is, one in which light is extracted from the side of the transparent electrode serving as the cathode opposite to the substrate.
- the top emission type has a configuration in which a counter electrode serving as an anode is provided on the substrate side, and a light-emitting functional layer and a transparent electrode serving as a cathode are laminated in this order on the surface thereof.
- organic EL element Representative examples of the structure of the organic EL element are shown below.
- anode/hole injection transport layer/light emitting layer/electron injection transport layer/cathode ii) anode/hole injection transport layer/light emitting layer/hole blocking layer/electron injection transport layer/cathode
- organic EL The device may have a non
- the intermediate layer may be a charge generation layer or may have a multiphoton unit structure.
- the organic EL element applicable to the present invention, for example, JP-A-2013-157634, JP-A-2013-168552, JP-A-2013-177361, JP-A-2013-187211, JP-A-2013-187211, 2013-191644, JP 2013-191804, JP 2013-225678, JP 2013-235994, JP 2013-243234, JP 2013-243236, JP 2013- 242366, JP 2013-243371, JP 2013-245179, JP 2014-003249, JP 2014-003299, JP 2014-013910, JP 2014-017493 Configurations described in Japanese Patent Laid-Open No. 2014-017494 and the like can be mentioned.
- the substrate (hereinafter also referred to as a supporting substrate, substrate, substrate, support, etc.) that can be used in the organic EL element, specifically, glass or resin film is preferably applied, and flexibility is required. It is preferable that it is a resin film. Moreover, it may be transparent or opaque. In the case of a so-called bottom emission type in which light is extracted from the substrate side, the substrate is preferably transparent.
- Preferred resins include polyester resins, methacrylic resins, methacrylic acid-maleic acid copolymers, polystyrene resins, transparent fluororesins, polyimides, fluorinated polyimide resins, polyamide resins, polyamideimide resins, polyetherimide resins, and cellulose acylate resins.
- polyurethane resin polyether ether ketone resin, polycarbonate resin, alicyclic polyolefin resin, polyarylate resin, polyether sulfone resin, polysulfone resin, cycloolefin copolymer, fluorene ring-modified polycarbonate resin, alicyclic modified polycarbonate resin, fluorene ring-modified
- substrates containing thermoplastic resins such as polyester resins and acryloyl compounds. These resins can be used alone or in combination of two or more.
- the substrate is preferably made of a heat-resistant material. Specifically, a substrate having a linear expansion coefficient of 15 ppm/K or more and 100 ppm/K or less and a glass transition temperature (Tg) of 100° C. or more and 300° C. or less is used.
- the base material satisfies the requirements for use in electronic parts and laminated films for displays. That is, when the sealing film of the present invention is used for these uses, the substrate may be exposed to a process at 150° C. or higher. In this case, if the coefficient of linear expansion of the substrate exceeds 100 ppm/K, the dimensions of the substrate will not be stable when the substrate is subjected to the temperature process as described above, and the thermal expansion and contraction will deteriorate the insulation performance. , or the problem of not being able to withstand the heat process is likely to occur. If it is less than 15 ppm/K, the film may crack like glass and the flexibility may deteriorate.
- the substrate is preferably transparent. That is, the light transmittance is usually 80% or higher, preferably 85% or higher, more preferably 90% or higher.
- the light transmittance is calculated by measuring the total light transmittance and the amount of scattered light using the method described in JIS K7105: 1981, that is, using an integrating sphere light transmittance measuring device, and subtracting the diffuse transmittance from the total light transmittance. can do.
- the substrates listed above may be unstretched films or stretched films.
- the base material can be produced by a conventionally known general method.
- the matters described in paragraphs "0051” to "0055” of International Publication No. 2013/002026 can be appropriately employed.
- the surface of the substrate may be subjected to various known treatments for improving adhesion, such as corona discharge treatment, flame treatment, oxidation treatment, or plasma treatment, and the above treatments may be combined as necessary. may be Moreover, you may perform adhesion-facilitating treatment to a base material.
- the base material may be a single layer or may have a laminated structure of two or more layers.
- each substrate may be of the same type or of different types.
- the thickness of the substrate according to the present invention (the total thickness in the case of a laminated structure of two or more layers) is preferably 10 to 200 ⁇ m, more preferably 20 to 150 ⁇ m.
- a film substrate it is preferably a film substrate with a gas barrier layer.
- the gas barrier layer for the film substrate may have an inorganic coating, an organic coating, or a hybrid coating of both of them formed on the surface of the film substrate.
- it is preferably a barrier film with a water vapor transmission rate (25 ⁇ 0.5°C, relative humidity (90 ⁇ 2)% RH) of 0.01 g/m 2 ⁇ 24h or less.
- any material can be used as long as it has a function of suppressing the infiltration of substances that cause deterioration of the device, such as moisture and oxygen.
- Examples include silicon monoxide, silicon dioxide, silicon nitride, silicon oxynitride, Silicon carbide, silicon oxycarbide, etc. can be used.
- the gas barrier layer is not particularly limited.
- an inorganic material is sputtered (for example, , magnetron cathode sputtering, planar magnetron sputtering, bipolar AC planar magnetron sputtering, bipolar AC rotating magnetron sputtering, etc.), vapor deposition methods (e.g., resistance heating vapor deposition, electron beam vapor deposition, ion beam vapor deposition, plasma assisted vapor deposition, etc.), thermal CVD method, catalytic chemical vapor deposition method (Cat-CVD), capacitively coupled plasma CVD method (CCP-CVD), optical CVD method, plasma CVD method (PE-CVD), epitaxial growth method, atomic layer deposition (ALD) method, reaction It is preferable to form the layer by a chemical vapor
- an inorganic gas barrier layer by applying a coating solution containing an inorganic precursor such as polysilazane or tetraethyl orthosilicate (TEOS) onto a support and then performing modification treatment by irradiation with vacuum ultraviolet light or the like;
- the inorganic gas barrier layer can also be formed by a film metallization technique such as metal plating on a resin base material, adhesion of a metal foil to a resin base material, or the like.
- the inorganic gas barrier layer may contain an organic layer containing an organic polymer. That is, the inorganic gas barrier layer may be a laminate of an inorganic layer containing an inorganic material and an organic layer.
- the organic layer is formed, for example, by applying an organic monomer or organic oligomer to a resin substrate to form a layer, followed by polymerization using, for example, an electron beam device, a UV light source, a discharge device, or other suitable device. And it can be formed by cross-linking as necessary. It can also be formed, for example, by flash evaporation and vapor deposition of radiation crosslinkable organic monomers or oligomers, followed by forming a polymer from the organic monomers or organic oligomers. Coating efficiency can be improved by cooling the resin substrate.
- Examples of coating methods for organic monomers or organic oligomers include roll coating (eg, gravure roll coating) and spray coating (eg, electrostatic spray coating).
- Examples of laminates of inorganic layers and organic layers include laminates described in International Publication No. 2012/003198 and International Publication No. 2011/013341.
- the thickness of each layer may be the same or different.
- the thickness of the inorganic layer is preferably in the range of 3-1000 nm, more preferably in the range of 10-300 nm.
- the thickness of the organic layer is preferably in the range from 100 nm to 100 ⁇ m, more preferably in the range from 1 to 50 ⁇ m.
- Substrate Preparation A 15 ⁇ m polyimide film was prepared as a film substrate. Further, a gas barrier layer (SiO 2 film: 250 nm/SiNx film: 50 nm/SiO 2 film: 500 nm (upper layer/intermediate layer/lower layer)) for a film substrate was formed on this polyimide film by plasma CVD.
- SiO 2 film: 250 nm/SiNx film: 50 nm/SiO 2 film: 500 nm (upper layer/intermediate layer/lower layer) for a film substrate was formed on this polyimide film by plasma CVD.
- first electrode metal layer
- the thickness of the formed first electrode was 150 nm.
- the thickness of the first electrode is a value measured by a contact surface profiler (DECTAK).
- the Al film was formed by using a tungsten resistance heating crucible after reducing the pressure to a degree of vacuum of 1 ⁇ 10 ⁇ 4 Pa using a vacuum deposition apparatus.
- each vapor deposition crucible in a vacuum vapor deposition apparatus was filled with the following materials constituting each layer of the organic functional layer in the optimum amount for device fabrication.
- the crucible for vapor deposition was made of molybdenum or tungsten resistance heating material.
- silicon nitride SiN, Vickers hardness HV900 having a thickness of 500 nm is formed by plasma CVD. formed.
- Second Sealing Layer Formation of Second Sealing Layer
- the sealing composition 1 prepared above was filled into a cartridge-integrated head of an inkjet device in a nitrogen environment. Then, the organic EL element formed up to the first sealing layer was coated with the sealing composition 1 using an inkjet method in a nitrogen environment. After that, an air-cooled LED of 395 nm (manufactured by Phoseon Technology) was irradiated with UV with an accumulated energy of 1 J/cm 2 to form a second sealing layer.
- the thickness of the second sealing layer was set by adjusting the number of ink-jet coatings, and the following two types of thickness of the second sealing layer were formed. ⁇ 3 ⁇ m (one application) ⁇ 10 ⁇ m (applied 3 times)
- Organic EL elements 2 to 66 for evaluation in the same manner as in the preparation of the organic EL element 1, except that the sealing composition 1 in the formation of the second sealing layer was changed as shown in the table below. 101-132 and 201-209 were made.
- Each organic EL device was wrapped around a metal roller having a diameter of 10 mm and left in a constant temperature and humidity chamber under high temperature and high humidity conditions (temperature of 60° C., relative humidity of 90%) to conduct an accelerated deterioration test.
- the polyimide film which is the film substrate, is wound so as to be in contact with the metal roller.
- each organic EL device was taken out from the thermo-hygrostat and checked under a microscope and the luminous state (dark spot area ratio) at room temperature. ⁇ , ⁇ and ⁇ of the following evaluation criteria were regarded as acceptable.
- the light emission characteristics were evaluated by comparing the light emission efficiency with the organic EL device for comparison.
- a comparative organic EL device was prepared by using non-alkali glass instead of the film substrate in the organic EL device prepared above. Further, instead of forming the first sealing layer, the second sealing layer, and the third sealing layer, sealing was performed in a nitrogen atmosphere using a glass sealing can to which barium oxide was attached. An ultraviolet curable adhesive was used to bond the sealing can and the substrate of the organic EL element, and the two were bonded by irradiating ultraviolet rays to prepare a sealing element (an organic EL element for comparison).
- the percentage is 0.1% or more and less than 1% of the total number of nozzles ⁇ : The percentage of nozzle defects is less than 0.1% of the total number of nozzles
- the organic EL element having the sealing layer formed using the sealing composition of the present invention has higher sealing performance and bending resistance than the organic EL element of the comparative example.
- the luminous efficiency and the ink-jet ejection property are excellent.
- the present invention provides an electronic device encapsulating composition that has good ink jetting properties, excellent bending resistance, and excellent sealing performance by preventing moisture permeation, and as a result, has excellent luminous efficiency. It can be used for a sealing film forming method and an electronic device sealing film.
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Abstract
Description
しかしながら、前記特許文献1に記載のディスプレイ装置では、有機保護膜の拡散係数が十分低いため、85℃、85%RH、100時間以上のような高温高湿下の過酷な条件では水分透過が問題で、封止性能が悪く、発光効率の低下に影響を及ぼしていた。さらに、有機保護膜と隣接する層との応力差や接着力不足、屈曲時の屈曲耐性も問題とされていた。
しかしながら、前記特許文献2に開示された技術では、分子量の大きいオリゴマーの影響でインクジェットにより吐出する際に、ノズル詰まりが生じるという問題があった。また、オリゴマーの影響により、架橋密度が下がり、薄膜領域では水分透過の問題が残っていた。
しかしながら、前記特許文献3に開示された技術においても、85℃、85%RH、100時間以上のような高温高湿下の過酷な条件では、水分透過が問題で、また、屈曲時の屈曲耐性も問題とされていた。
すなわち、本発明に係る上記課題は、以下の手段により解決される。
前記光硬化性モノマー(A)が、少なくとも鎖状の(メタ)アクリレートモノマー(A1)と、鎖状の(メタ)アクリレートモノマー(A2)とを含有し、
前記鎖状の(メタ)アクリレートモノマー(A2)が、フェニル基、複素環基又はシクロアルキル基のうち、少なくとも一つを有し、
さらに、金属含有化合物(C)を含有し、
前記金属含有化合物(C)が、金属アルコキシド、金属キレート、シラン系化合物、シラザン系化合物及び金属ハロゲン化物のうち、少なくとも一種を含有する電子デバイス封止用組成物。
電子デバイス上に気相法により第1封止層を形成する工程と、
前記第1封止層上に前記電子デバイス封止用組成物を塗布することにより第2封止層を形成する工程と、を備える電子デバイス封止膜形成方法。
窒化ケイ素、酸化ケイ素又は酸窒化ケイ素を含有する第1封止層と、
第1項から第6項までのいずれか一項に記載の電子デバイス封止用組成物を用いた第2封止層と、を有する電子デバイス封止膜。
本発明の効果の発現機構又は作用機構については、明確にはなっていないが、以下のように推察している。
鎖状の(メタ)アクリレートモノマー(A1)及び鎖状の(メタ)アクリレートモノマー(A2)を組み合わせて用いることにより、理想的な分子間力が働くため、表面張力がインクジェット吐出性における最適な範囲に調整される。その結果、連続吐出性及びオープンタイム(吐出から次の吐出までの空き時間)を広くとる設計が可能となる。
金属含有化合物(C)に含まれている金属と配位子が水と反応し、水の移動を抑制して拡散を防ぐことで、水分透過を抑制することができる。
また、鎖状の(メタ)アクリレートモノマー(A1)及び(A2)を組み合わせて用いることで、金属含有化合物(C)の分散性が向上するために、金属含有化合物(C)の水分トラップ機能を均一に発現させることができる。その結果、水分透過を抑制でき、封止性能に優れる。
金属含有化合物(C)を含有することにより、隣接する層との相互作用が強くなる。例えば、金属含有化合物(C)を第2封止層に添加することで、当該第2封止層に隣接する第1及び第3封止層との相互作用が強くなり密着性が上がる。その結果、折り曲げて発生する層間の応力への耐性が上がり、屈曲耐性が良好となる。
また、金属含有化合物(C)が水の拡散を防ぐため、薄い膜でも信頼性を担保でき、薄い膜であれば、曲げた時の応力が低くなり、層間剥離が低減される。この点においても、屈曲耐性が良好となる。
さらに、鎖状の(メタ)アクリレートモノマー(A1)及び(A2)が適度な柔軟性を有するため、当該鎖状の(メタ)アクリレートモノマー(A1)及び(A2)を含有した封止層に屈曲耐性を付与することができる。
この特徴は、下記各実施形態に共通又は対応する技術的特徴である。
また、前記鎖状の(メタ)アクリレートモノマー(A2)の、電子デバイス封止用組成物全体に対する含有量が、5~45質量%の範囲内であることが、インクジェット吐出性、水分透過性及び屈曲耐性の点で好ましい。
さらに、前記第2封止層を形成する工程が、インクジェット法を用いることが、高精度に層形成できる点で好ましい。
本発明の電子デバイス封止用組成物(以下、単に「封止用組成物」ともいう。)は、前記光硬化性モノマー(A)が、少なくとも鎖状の(メタ)アクリレートモノマー(A1)と、鎖状の(メタ)アクリレートモノマー(A2)とを含有し、前記鎖状の(メタ)アクリレートモノマー(A2)が、フェニル基、複素環基又はシクロアルキル基のうち、少なくとも一つを有し、さらに、金属含有化合物(C)を含有し、前記金属含有化合物(C)が、金属アルコキシド、金属キレート、シラン系化合物、シラザン系化合物及び金属ハロゲン化物のうち、少なくとも一種を含有する。
また、本発明における「電子デバイス」とは、電子のもつ運動エネルギー、位置エネルギーなどを利用して電気信号の発生、増幅、変換、又は制御などを行う素子をいう。例えば、発光ダイオード素子、有機エレクトロルミネッセンス素子、光電変換素子及びトランジスターなどの能動素子が挙げられる。また、本発明においては、他からの働きかけに対し、「抵抗する」「蓄える」などの受け身的な仕事をする受動素子、例えば、抵抗器・コンデンサーなども電子デバイスに含める。
したがって、本発明の封止用組成物は、前記した電子デバイスを封止するための封止膜を形成するために用いられる。
前記光硬化性モノマー(A)は、光重合開始剤によって硬化反応を行える光硬化性モノマーを意味する。
前記光硬化性モノマーとしては、シリコン(Si)を含まない非-シリコン系モノマーを使用してもよく、例えば、C、H、O、N又はSから選ばれる元素のみからなるモノマーであってもよいが、これに限定されない。光硬化性モノマーは、通常の合成方法で合成して使用してもよく、商業的に販売する製品を購入して使用してもよい。
前記光硬化性モノマー(A)は、少なくとも鎖状の(メタ)アクリレートモノマー(A1)と、鎖状の(メタ)アクリレートモノマー(A2)とを含有する。
本発明において、「鎖状の(メタ)アクリレートモノマー(A1)」とは、分子内で炭素原子が最も長く連続してつながっているところに着目してみたとき、2個以上の炭素原子が一列に連結している直鎖構造及び枝分かれ構造を含んでいるモノマーであって、鎖式(又は、非環式)モノマーともいい、環状構造を含まない。なお、鎖状の骨格の中に、O、N又はSから選ばれる原子が含まれていてもよい。例えば、鎖状の骨格の中にエーテル結合やスルフィド結合等が含まれていてもよい。
このような本発明に係る鎖状の(メタ)アクリレートモノマー(A1)としては、置換又は非置換のC2~C20(炭素数2~20)のアルキル基、置換又は非置換のC2~C20のアルキルシリル基、置換又は非置換のC2~C20のアルキレン基、アミン基、エチレンオキシド基などを有するモノ(メタ)アクリレート、ジ(メタ)アクリレート、トリ(メタ)アクリレート、テトラ(メタ)アクリレートなどが挙げられる。
なお、前記エチレンオキシド骨格とは、炭素鎖2個と酸素1個のユニットであり、環を有していてもよいし、開環していてもよい。
上記のような(メタ)アクリレートモノマー以外にもエポキシ(メタ)アクリレートを挙げることができる。
本発明において、「鎖状の(メタ)アクリレートモノマー(A2)」とは、分子内で炭素原子が最も長く連続してつながっているところに着目してみたとき、2個以上の炭素原子が一列に連結している直鎖構造及び枝分かれ構造を含んでいるモノマーであって、直鎖構造又は枝分かれ構造の一部に、フェニル基、複素環基又はシクロアルキル基のうち、少なくとも一種を有する。
なお、フェニル基を有する場合は、1つのフェニル基を有し、2つ以上のフェニル基を有する場合を含まないものとする。また、鎖状の骨格の中に、O、N又はSから選ばれる原子が含まれていてもよい。例えば、鎖状の骨格の中にエーテル結合やスルフィド結合等が含まれていてもよい。
また、前記複素環基とは、芳香族性を有する複素環基であっても、芳香族性を有さない複素環基(例えば、シクロアルキル骨格内にヘテロ原子を有するもの)であってもよい。
具体的には、イソボルニル(メタ)アクリレート、ジシクロペンタニル(メタ)アクリレート、ジシクロペンテニル(メタ)アクリレート、ジシクロペンテニロキシエチル(メタ)アクリレート、シクロヘキシル(メタ)アクリレート等の脂環式(メタ)アクリレート、1,3-アダマンタンジオールジ(メタ)アクリレート、1,3-アダマンタンジメタノールジ(メタ)アクリレート、2-メチル-2-アダマンチル(メタ)アクリレート、2-エチル-2-アダマンチル(メタ)アクリレート、3-ヒドロキシ-1-アダマンチル(メタ)アクリレート、1-アダマンチル(メタ)アクリレート等が挙げられる。2官能以上の多官能(メタ)アクリレート化合物としては、トリシクロデカンジメタノール(メタ)アクリレート等の脂環式(メタ)アクリレート又はこれらの混合物を含んでもよいが、これに限定されない。
複素環(ヘテロ環)骨格として、具体的に使用できる骨格としては、ジオキサン構造、トリオキサン構造、イソシアヌレート構造等を挙げることができる。
具体的に、複素環基を有する(メタ)アクリレートモノマーは、テトラヒドロフルフリル(メタ)アクリレート、アルコキシ化テトラヒドロフルフリルアクリレートカプロラクトン変性テトラヒドロフルフリル(メタ)アクリレート、モルホリン(メタ)アクリレート、イソシアヌル酸EEO変性ジアクリレート(M-215)、ε-カプロラクトン変性トリス(アクロキシエチル)イソシアヌレート(M-327)、イソシアヌル酸EO変性ジ及びトリアクリレート(M-313又はM-315)、ヒドロキシピバルアルデヒド変性トリメチロールプロパンジアクリレート(R-604)、ペンタメチルピペリジニルメタクリレート(FA-711)、テトラメチルピペリジニルメタクリレート(FA-712HM)、環状トリメチロールプロパンフォルマルアクリレート(SR531)又はこれらの混合物を含んでもよいが、これに限定されない。
本発明において、「金属含有化合物」という用語は、金属を含有する無機化合物及び有機化合物の総称として用いる。本発明においては、特に金属を含有する有機化合物を用いることが好ましく、例えば有機金属化合物及び有機金属錯体が好ましい。
さらに、これらの化合物の中でも、本発明において用いる前記金属含有化合物(C)としては、金属アルコキシド、金属キレート(「(金属)キレート錯体」ともいう。)、シラン系化合物、シラザン系化合物及び金属ハロゲン化物から選ばれる。
金属含有化合物(C)を構成する金属Mとしては、例えば、Ti、Si、Al、Zr、ケイ素、ビスマス、ストロンチウム、カルシウム、銅、ナトリウム、リチウムが挙げられる。また、セシウム、マグネシウム、バリウム、バナジウム、ニオブ、クロム、タンタル、タングステン、クロム、インジウム、鉄などが挙げられる。特にTi、Si、Al及びZrのうち少なくともいずれかであることが好ましい。
例えば、テトラクロロシラン、メチルトリクロロシラン、ジメチルジクロロシラン、トリメチルクロロシラン、フェニルトリクロロシラン、メチルトリメトキシシラン、ジメチルジメトキシシラン、フェニルトリメトキシシラン、テトラエトキシシラン、メチルトリエトキシシラン、ジメチルジエトキシシラン、フェニルトリエトキシシラン、n-プロピルトリメトキシシラン、n-プロピルトリエトキシシラン、ヘキシルトリメトキシシラン、ヘキシルトリエトキシシラン、デシルトリメトキシシラン、デシルトリメトキシシラン、トリフルオロプロピルトリメトキシシラン、ヘキサメチルジシラザン、パーヒドロポリシラザン、メチルポリシラザン、ビニルトリメトキシシラン、ビニルトリエトキシシラン、2-(3,4-エポキシシクロヘキシル)エチルトリメトキシシラン、3-グリシドキシプロピルメチルジメトキシシラン、3-グリシドキシプロピルトリメトキシシラン、3-グリシドキシプロピルメチルジエトキシシラン、3-グリシドキシプロピルトリエトキシシラン、p-スチリルトリメトキシシラン、3-メタクリロキシプロピルメチルジメトキシシラン、3-メタクリロキシプロピルトリメトキシシラン、3-メタクリロキシプロピルメチルジエトキシシラン、3-メタクリロキシプロピルトリエトキシシラン、3-アクリロキシプロピルトリメトキシシラン、N-2-(アミノエチル)-3-アミノプロピルメチルジメトキシシラン、N-2-(アミノエチル)-3-アミノプロピルトリメトキシシラン、N-2-(アミノエチル)-3-アミノプロピルトリエトキシシラン、3-アミノプロピルトリメトキシシラン、3-アミノプロピルトリエトキシシラン、N-フェニル-3-アミノプロピルトリメトキシシラン、3-ウレイドプロピルトリエトキシシラン、3-クロロプロピルトリメトキシシラン、3-メルカプトプロピルメチルジメトキシシラン、3-メルカプトプロピルトリメトキシシラン、ビス(トリエトキシシリルプロピル)テトラスルフィド、3-イソシアネートプロピルトリエトキシシラン、テトライソシアネートシラン、メチルトリイソシアネートシラン等のシラン系化合物などが挙げられる。
また、金属含有化合物(C)は、その一部が金属Mを有する酸化物又は水酸化物へ変質していていもよい。これらの金属Mの酸化物又は水酸化物は、金属含有化合物(C)に対するモル分率として、0.01~0.1[mol/mol]の範囲内であることが、透明性の観点で好ましい。
前記光重合開始剤(B)は、光硬化性反応を行える通常の光重合開始剤であれば特に限定されない。
光重合開始剤(B)としては、例えば、トリアジン系、アセトフェノン系、ベンゾフェノン系、チオキサントン系、ベンゾイン系、リン系、オキシム系又はこれらの混合物を含んでもよい。
ェノン、2,2’-ジクロロ-4-フェノキシアセトフェノン、2-メチル-1-(4-(メチルチオ)フェニル)-2-モルホリノプロパン-1-オン、2-ベンジル-2-ジメチルアミノ-1-(4-モルホリノフェニル)-ブタン-1-オン、及びこれらの混合物であってもよい。
具体的に、前記光重合開始剤は、0.5~10質量部、より具体的に1~8質量部の範囲内で含有されることが好ましい。
また、前記光重合開始剤は、本発明の封止用用組成物中に、固形分を基準にして0.1~10質量%の範囲内で含有されること好ましく、より好ましくは0.1~8質量%の範囲内である。前記範囲内とすることにより、光重合が十分に起こり、残った未反応開始剤によって透過率が低下することを防止することができる。
本発明の封止用組成物は、本発明の効果が得られる範囲において、酸化防止剤、熱安定化剤、光増感剤、分散剤、熱架橋剤及び界面活性剤を含むその他の成をさらに含んでいてもよい。これらの成分は、本発明の封止用組成物中に、一種のみが含まれていてもよく、二種類以上が含まれていてもよい。
例えば、熱安定化剤としては、立体障害のある(sterically hindered)フェノール性熱安定剤を使用してもよく、具体的に、ポリ(ジ-シクロペンタジエン-co-p-クレゾール)、オクタデシル-3-(3,5-ジ-tert-ブチル-4-ヒドロキシフェニル)プロピオネート、2,6-ジ-tert-ブチル-4-メチルフェノール、2,2’-メタノ-ビ(4-メチル-6-tert-ブチル-フェノール)、6,6’-ジ-tert-ブチル-2,2’-チオジ-p-クレゾール、トリス(4-tert-ブチル-3-ヒドロキシ-2,6-ジメチルベンジル)イソシアヌレート、トリエチレングリコール-ビス(3-tert-ブチル-4-ヒドロキシ-5-メチルフェニル)、4,4’-チオビス(6-tert-ブチル-m-クレゾール)、3,3’-ビス(3,5-ジ-tert-ブチル-4-ヒドロキシフェニル)-N,N’-ヘキサメチレン-ジプロピオンアミド、ペンタエリスリトールテトラキス(3-(3,5-ジ-tert-ブチル-4-ヒドロキシフェニル)プロピオネート)、ステアリル-3,5-ジ-tert-ブチル-4-ヒドロキシフェニルプロピオネート、ペンタエリスリトールテトラキス1,3,5-トリス(2,6-ジ-メチル-3-ヒドロキシ-4-tert-ブチル-ベンジル)イソシアヌレート、1,3,5-トリス(3,5-ジ-tert-ブチル-4-ヒドロキシベンジル)イソシアヌレート、1,3,5-トリス(2-ヒドロキシエチル)イソシアヌレート-トリス(3,5-ジ-tert-ブチルヒドロキシフェニルプロピオネート)のうちの一つ以上を含んでもよいが、これに制限されない。
光増感剤としては、例えば、9,10-ジブトキシアントラセン等のアントラセン誘導体;ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンゾインイソブチルエーテル等のベンゾイン誘導体;
ベンゾフェノン、o-ベンゾイル安息香酸メチル、4-フェニルベンゾフェノン、4-ベンゾイル-4′-メチル-ジフェニルサルファイド、3,3′,4,4′-テトラ(t-ブチルパーオキシカルボニル)ベンゾフェノン、2,4,6-トリメチルベンゾフェノン、4-ベンゾイル-N,N-ジメチル-N-[2-(1-オキソ-2-プロペニルオキシ)エチル]ベンゼンメタナミニウムブロミド、(4-ベンゾイルベンジル)トリメチルアンモニウムクロリド等のベンゾフェノン誘導体;
2-イソプロピルチオキサントン、4-イソプロピルチオキサントン、2,4-ジエチルチオキサントン、2,4-ジクロロチオキサントン、1-クロロ-4-プロポキシチオキサントン、2-(3-ジメチルアミノ-2-ヒドロキシ)-3,4-ジメチル-9Hチオキサントン-9-オンメソクロリド等のチオキサントン誘導体;などの化合物が挙げられる。なかでも、アントラセン誘導体、ベンゾイン誘導体、ベンゾフェノン誘導体、アントラキノン誘導体、チオキサントン誘導体を用いることが好ましい。
本発明の封止用組成物は、紫外線を10~500mW/cm2の範囲内で1~100秒間照射して硬化することが好ましいが、これに限定されるものではない。
紫外線としては、電子デバイスの劣化を防ぐ観点で395nmのLEDを用いることが好ましい。
本発明の封止用組成物の粘度は3~20mPa・sの範囲内であることが、インクジェットヘッドからの吐出性をより高める観点から好ましい。表面張力は、15mN/m以上45mN/m未満であることがインクジェットヘッドからの吐出性をより高める観点から好ましい。
本発明において、これらの粘度は、以下の方法によって得られた値である。本発明の封止用組成物をストレス制御型レオメーターPhysica MCR300(コーンプレートの直径:75mm、コーン角:1.0°)、Anton Paar社製にセットする。次いで、前記封止用組成物を100℃に加熱し、降温速度0.1℃/s、歪み5%、角周波数10radian/sで、の条件で20℃まで前記封止用組成物を冷却して、動的粘弾性の温度変化曲線を得る。
本発明における顔料粒子の平均粒径とは、データサイザーナノZSP、Malvern社製を使用して動的光散乱法によって求めた値を意味する。なお、着色材を含む封止用組成物は濃度が高く、この測定機器では光が透過しないので、封止用組成物を200倍で希釈してから測定する。測定温度は常温(25℃)とする。
本発明の電子デバイス封止膜形成方法は、前記した本発明の電子デバイス封止用組成物を用いて、封止膜を形成する方法であって、電子デバイス上に気相法により第1封止層を形成する工程と、前記第1封止層上に前記電子デバイス封止用組成物を塗布することにより第2封止層を形成する工程と、を備える。
また、前記第2封止層上に、気相法により第3封止層を形成する工程を備えることが、電子デバイスの封止性能をより高めることができる点で好ましい。
第1封止層形成工程は、電子デバイス上に気相法により第1封止層を形成する。
気相法としては、スパッタリング法(例えば、マグネトロンカソードスパッタリング、平板マグネトロンスパッタリング、二極AC平板マグネトロンスパッタリング、二極AC回転マグネトロンスパッタリングなど、反応性スパッタ法を含む。)、蒸着法(例えば、抵抗加熱蒸着、電子ビーム蒸着、イオンビーム蒸着、プラズマ支援蒸着など)、熱CVD法、触媒化学気相成長法(Cat-CVD)、容量結合プラズマCVD法(CCP-CVD)、光CVD法、プラズマCVD法(PE-CVD)、エピタキシャル成長法、原子層成長法(ALD)等の化学蒸着法等が挙げられる。中でも、ALD法、CVD法により形成することが好ましい。
第1封止層は、窒化ケイ素(SiN)、酸化ケイ素(一酸化ケイ素、二酸化ケイ素等)又は酸窒化ケイ素を含有する。
第1封止層の厚さは、例えば、10~1000nmの範囲内であることが好ましく、100~500nmの範囲内であることがより好ましい。
第2封止層形成工程は、前記第1封止層上に前記した本発明の封止用組成物を塗布することにより第2封止層を形成する。
具体的には、前記第1封止層上に、前記封止用組成物を塗布し(塗布工程)、得られた塗布膜に窒素雰囲気下にて真空紫外線照射して改質処理する工程を有してもよい。
封止用組成物の塗布方法としては、任意の適切な方法を採用することができ、例えば、スピンコート法、ロールコート法、フローコート法、インクジェット法、スプレーコート法、プリント法、ディップコート法、流延成膜法、バーコート法、グラビア印刷法等が挙げられる。中でも、インクジェット法を用いることが有機EL素子などの電子デバイスを封止する際に求められる微細なパターニングをオンデマンドで行える点で好ましい。
インクジェット方式は、大別するとドロップオンデマンド方式とコンティニュアス方式二つに分けられ、どちらも使用することができる。ドロップオンデマンド方式としては、電気-機械変換方式(例えば、シングルキャビティー型、ダブルキャビティー型、ベンダー型、ピストン型、シェアーモード型、シェアードウォール型等)、電気-熱変換方式(例えば、サーマルインクジェット型、バブルジェット(登録商標)型等)、静電吸引方式(例えば、電界制御型、スリットジェット型等)及び放電方式(例えば、スパークジェット型等)等がある。インクジェットヘッドのコストや生産性の観点からは、電気-機械変換方式、又は電気-熱変換方式のヘッドを用いることが好ましい。なお、インクジェット方式により、液滴(例えば、塗布液)を滴下させる方法を「インクジェット法」と呼ぶ場合がある。
前記改質処理工程では、塗布工程後、得られた塗布膜に窒素雰囲気下にて真空紫外線照射して改質処理する工程を有してもよい。
改質処理とは、ポリシラザンの酸化ケイ素又は酸窒化ケイ素への転化反応をいう。改質処理も、同様に、グローブボックス内といった窒素雰囲気下や減圧下で行う。
本発明における改質処理は、ポリシラザンの転化反応に基づく公知の方法を選ぶことができる。本発明においては、低温で転化反応が可能なプラズマやオゾンや紫外線を使う転化反応が好ましい。プラズマやオゾンは従来公知の方法を用いることができる。本発明においては、上記塗布膜を設け、波長200nm以下の真空紫外光(VUVともいう。)を照射して改質処理することにより、本発明に係る第2封止層を形成することが好ましい。
当該第2封止層のうち、層全体が改質された層であってもよいが、改質処理された改質層の厚さは、1~50nmの範囲内が好ましく、1~30nmの範囲内がさらに好ましい。
第3封止層形成工程は、前記第2封止層上に気相法により第3封止層を形成する。
気相法としては、第1封止層形成工程で用いた気相法と同様に、スパッタリング法(例えば、マグネトロンカソードスパッタリング、平板マグネトロンスパッタリング、二極AC平板マグネトロンスパッタリング、二極AC回転マグネトロンスパッタリングなど、反応性スパッタ法を含む。)、蒸着法(例えば、抵抗加熱蒸着、電子ビーム蒸着、イオンビーム蒸着、プラズマ支援蒸着など)、熱CVD法、触媒化学気相成長法(Cat-CVD)、容量結合プラズマCVD法(CCP-CVD)、光CVD法、プラズマCVD法(PE-CVD)、エピタキシャル成長法、原子層成長法(ALD)等の化学蒸着法等が挙げられる。中でも、ALD法、CVD法により形成することが好ましい。
第3封止層は、窒化ケイ素(SiN)、酸化ケイ素(一酸化ケイ素、二酸化ケイ素等)又は酸窒化ケイ素を含有する。
第3封止層の厚さは、例えば、10~1000nmの範囲内であることが好ましく、100~500nmの範囲内であることがより好ましい。
前記導電膜は、例えば、ITO(Indium Tin Oxide)、IZO(Indium Zinc Oxide)等の金属化合物膜のほか、フレキシブル性に優れた、グラフェン膜、金属ナノワイヤー膜(例えば、銀ナノワイヤー又は銅ナノワイヤーを含む膜)、金属ナノ粒子膜(例えば、銀ナノ粒子又は銅ナノ粒子を含む膜)で構成することができる。また、例えばAl膜/Ti膜/Al膜のような複数金属の積層膜で構成することができる。
本発明の電子デバイス封止膜は、電子デバイスを封止する電子デバイス封止膜であって、窒化ケイ素、酸化ケイ素又は酸窒化ケイ素を含有する第1封止層と、前記した本発明の電子デバイス封止用組成物を用いた第2封止層と、を有する。
本発明の電子デバイス封止膜は、前記電子デバイス封止膜形成方法により形成される。すなわち、前記した本発明の電子デバイス封止用組成物を用いて第2封止層が形成される。
また、本発明の電子デバイス封止膜は、前記第2封止層上に、さらに窒化ケイ素、酸化ケイ素又は酸窒化ケイ素を含有する第3封止層を有することが好ましい。
第1封止層は、電子デバイス上に前記した気相法により形成される層である。具体的には、窒化ケイ素(SiN)、酸化ケイ素(一酸化ケイ素、二酸化ケイ素等)又は酸窒化ケイ素を含有する。
第2封止層は、前記第1封止層に隣接して設けられ、前記第1封止層上に前記封止用組成物を塗布することにより形成される。
したがって、第2封止層は、少なくとも鎖状の(メタ)アクリレートモノマー(A1)と、鎖状の(メタ)アクリレートモノマー(A2)からなる重合体と、金属含有化合物(C)を含有する。
前記第2封止層における前記金属含有化合物(C)の含有量は、0.1~15質量%の範囲内であることが好ましく、5~10質量%の範囲内であることより好ましい。
また、第2封止層における金属含有化合物(C)は、その一部が金属Mを有する酸化物又は水酸化物へ変質していていもよい。これらの金属Mの酸化物又は水酸化物は、金属含有化合物(C)に対するモル分率として、0.01~0.1[mol/mol]の範囲内であることが、透明性の観点で好ましい。
第3封止層は、前記第2封止層に隣接して設けられ、前記した気相法により形成される層である。具体的には、第1封止層と同様に窒化ケイ素(SiN)、酸化ケイ素(一酸化ケイ素、二酸化ケイ素等)又は酸窒化ケイ素を含有する。
本発明の電子デバイス封止膜形成方法及び電子デバイス封止膜において、封止される電子デバイスとしては、例えば、有機EL素子、LED素子、液晶表示素子(LCD)、薄膜トランジスター、タッチパネル、電子ペーパー、太陽電池(PV)等を挙げることができる。本発明の効果がより効率的に得られるという観点から、有機EL素子、太陽電池又はLED素子が好ましく、有機EL素子が特に好ましい。
本発明に係る電子デバイスとして採用される有機EL素子は、ボトムエミッション型、すなわち、透明基材側から光を取り出すようにしたものであってもよい。
ボトムエミッション型は、具体的には、透明基材上に、カソードとなる透明電極、発光機能層、アノードとなる対向電極をこの順で積層することにより構成されている。
また、本発明に係る有機EL素子は、トップエミッション型、すなわち、基材とは逆のカソードとなる透明電極側から光を取り出すようにしたものであってもよい。
トップエミッション型は、具体的には、基材側にアノードとなる対向電極を設け、この表面に発光機能層、カソードとなる透明電極を順に積層した構成である。
(i)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(ii)陽極/正孔注入輸送層/発光層/正孔阻止層/電子注入輸送層/陰極
(iii)陽極/正孔注入輸送層/電子阻止層/発光層/正孔阻止層/電子注入輸送層/
陰極
(iv)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(v)陽極/正孔注入層/正孔輸送層/発光層/正孔阻止層/電子輸送層/電子注入層/陰極
(vi)陽極/正孔注入層/正孔輸送層/電子阻止層/発光層/正孔阻止層/電子輸送層/電子注入層/陰極
さらに、有機EL素子は、非発光性の中間層を有していても良い。中間層は電荷発生層であっても良く、マルチフォトンユニット構成であっても良い。
本発明に適用可能な有機EL素子の概要については、例えば、特開2013-157634号公報、特開2013-168552号公報、特開2013-177361号公報、特開2013-187211号公報、特開2013-191644号公報、特開2013-191804号公報、特開2013-225678号公報、特開2013-235994号公報、特開2013-243234号公報、特開2013-243236号公報、特開2013-242366号公報、特開2013-243371号公報、特開2013-245179号公報、特開2014-003249号公報、特開2014-003299号公報、特開2014-013910号公報、特開2014-017493号公報、特開2014-017494号公報等に記載されている構成を挙げることができる。
前記有機EL素子に用いることのできる基材(以下、支持基板、基体、基板、支持体等ともいう。)としては、具体的には、ガラス又は樹脂フィルムの適用が好ましく、フレキシブル性を要求される場合は、樹脂フィルムであることが好ましい。
また、透明であっても不透明であってもよい。基材側から光を取り出す、いわゆるボトムエミッション型の場合には、基材は透明であることが好ましい。
該基材は、電子部品用途、ディスプレイ用積層フィルムとしての必要条件を満たしている。すなわち、これらの用途に本発明の封止膜を用いる場合、基材は、150℃以上の工程に曝されることがある。この場合、基材の線膨張係数が100ppm/Kを超えると、前記のような温度の工程に流す際に基板寸法が安定せず、熱膨張及び収縮に伴い、遮断性性能が劣化する不都合や、又は熱工程に耐えられないという不具合が生じやすくなる。15ppm/K未満では、フィルムがガラスのように割れてしまいフレキシビリティが劣化する場合がある。
基材として用いることができる熱可塑性樹脂のより好ましい具体例としては、例えば、ポリエチレンテレフタレート(PET:70℃)、ポリエチレンナフタレート(PEN:120℃)、ポリカーボネート(PC:140℃)、脂環式ポリオレフィン(例えば日本ゼオン株式会社製、ゼオノア(登録商標)1600:160℃)、ポリアリレート(PAr:210℃)、ポリエーテルスルホン(PES:220℃)、ポリスルホン(PSF:190℃)、シクロオレフィンコポリマー(COC:特開2001-150584号公報に記載の化合物:162℃)、ポリイミド(例えば三菱ガス化学株式会社製、ネオプリム(登録商標):260℃)、フルオレン環変性ポリカーボネート(BCF-PC:特開2000-227603号公報に記載の化合物:225℃)、脂環変性ポリカーボネート(IP-PC:特開2000-227603号公報に記載の化合物:205℃)、アクリロイル化合物(特開2002-80616号公報に記載の化合物:300℃以上)等が挙げられる(括弧内温度はTgを示す)。
機モノマー又は有機オリゴマーからポリマーを形成することによっても形成することができる。コーティング効率は、樹脂基材を冷却することにより改善され得る。
モノマー(A1)、モノマー(A2)及びその他のモノマーを下記表I~表VIに示す種類及び質量部になるように窒素換気用下で秤量した。
さらに、光重合開始剤として、リン系開始剤(BASF社製、IRGACURE TPO)5質量部、増感剤として2-イソプロピルチオキサントン(Merck社製)0.5質量部、安定化剤としてIRGASTAB UV10(BASF社製)0.1質量部を褐色瓶へ入れ、65℃のホットプレート上で3時間撹拌した。
さらに、金属含有化合物(C)を、下記表I~表VIに示す種類及び質量部になるように加え1時間撹拌し、各封止用組成物1~66、101~132及び201~209を得た。
a1:トリエチレングリコールジアクリレート(SR272、SARTOMER社製)
a2:トリエチレングリコールジメタアクリレート(SR205、SARTOMER社製)
a3:トリプロピレングリコールジアクリレート(APG200、新中村工業社製)
a4:ヘキシルジアクリレート(AHDN、新中村工業社製)
a5:デシルジアクリレート(ADODN、新中村工業社製)
a6:ドデシルジメタアクリレート(DDD、新中村工業社製)
a11:2-フェノキシエチルアクリレート(POA、共栄社化学社製)
a12:ノニルフェノールEO 変性アクリレート(M-111、東亜合成社製)
a13:ベンジルアクリレート(BZA、東京化成工業社製)
a14:イソボニルアクリレート(IBA、共栄社化学社製)
a15:トリシクロデカンジメタノールジアクリレート(A-DCP、共栄社化学社製)
a16:ジオキサングリコールジアクリレート(A-DOG、新中村工業社製)
a21:エトキシ化-o-フェニルフェノールアクリレート(A-LEN10、新中村工業社製)
a22:ライトアクリレート(POB-A、共栄社化学社製)
a23:両末端ヒドロキシ基水素化ポリブタジエン(G1-1000、日本曹達社製、数平均分子量1500)
a24:ヒドロキシ基末端水素化ポリオレフィン(HLBH-P2000、クレイバレー社製、数平均分子量2100)
c1:Alキレート(ALCH-TR、川研ファインケミカル社製)
c2:Alキレート(ALCH、川研ファインケミカル社製)
c3:Alキレート(アルミキレートA、川研ファインケミカル社製)
c4:Alキレート(アルミキレートD、川研ファインケミカル社製)
c5:Alキレート(アルミキレートM、川研ファインケミカル社製)
c6:Alアルコキシド(ASBD、川研ファインケミカル社製)
c7:Alアルコキシド(アルゴマーB1、川研ファインケミカル社製)
c8:Alアルコキシド(オリープAOO、ホープ製薬社製)
c9:Alアルコキシド(オリープAOS、ホープ製薬社製)
c10:Alアルコキシド(ケロープEB-2、ホープ製薬社製)
c11:Alアルコキシド(ケロープEP-12、ホープ製薬社製)
c12:Tiキレート(TC1350、松本ファインケミカル社製)
c13:Tiキレート(TC800、松本ファインケミカル社製)
c14:Tiキレート(TC810、松本ファインケミカル社製)
c15:Tiアルコキシド(TA30、松本ファインケミカル社製)
c16:Tiアルコキシド(T-2899R、松本ファインケミカル社製)
c17:Zrキレート(ZC150、松本ファインケミカル社製)
c18:Zrアルコキシド(ZA65、松本ファインケミカル社製)
c19:ペルヒドロポリシラザン (製品名 NN120、AZ社製)
c20:メチルポリシラザン(製品名 アクアミカ LExp MHPS-20DB、AZ社製)
c21:3-アミノプロピルトリメトキシシラン (製品名 KBM-903、信越化学工業社製)
c22:4塩化チタン(和光純薬株式会社製)
(1)基板の準備
フィルム基板として、15μmのポリイミドフィルムを準備した。さらに、このポリイミドフィルムに、フィルム基材用のガスバリアー層(SiO2膜:250nm/SiNx膜:50nm/SiO2膜:500nm(上層/中間層/下層))をプラズマCVD法で成膜した。
前記基板の一方の面に、第1電極(金属層)として下記条件でAl膜を形成した。形成した第1電極の厚さは150nmであった。なお、第1電極の厚さは、接触式表面形状測定器(DECTAK)により測定した値である。
Al膜は、真空蒸着装置を用い、真空度1×10-4Paまで減圧した後、タングステン製の抵抗加熱用るつぼを使用して形成した。
まず、真空蒸着装置内の蒸着用るつぼの各々に、有機機能層の各層を構成する下記に示す材料を各々素子作製に最適の量で充填した。蒸着用るつぼは、モリブデン製又はタングステン製の抵抗加熱用材料で作製されたものを用いた。
真空度1×10-4Paまで減圧した後、下記化合物A-1の入った蒸着用るつぼに通電して加熱し、蒸着速度0.1nm/秒で第1電極(金属層側)上に蒸着し、厚さ10nmの正孔注入層を形成した。
次に、下記化合物M-2の入った蒸着用るつぼに通電して加熱し、蒸着速度0.1nm/秒で正孔注入層上に蒸着し、厚さ30nmの正孔輸送層を形成した。
次に、下記化合物BD-1及び下記化合物H-1を、化合物BD-1が7質量%の濃度になるように蒸着速度0.1nm/秒で共蒸着し、厚さ15nmの青色発光を呈する発光層(蛍光発光層)を形成した。
次に、下記化合物GD-1、下記化合物RD-1及び下記化合物H-2を、化合物GD-1が20質量%、RD-1が0.5質量%の濃度になるように蒸着速度0.1nm/秒で共蒸着し、厚さ15nmの黄色を呈する発光層(リン光発光層)を形成した。
その後、電子輸送材料として下記化合物T-1の入った加熱ボートを通電し、Alq3(トリス(8-キノリノール))よりなる電子輸送層を、発光層上に形成した。この際、蒸着速度を0.1~0.2nm/秒の範囲内とし、厚さを30nmとした。
次に、電子注入材料として下記化合物I-1の入った加熱ボートに通電して加熱し、Liqよりなる電子注入層を、電子輸送層上に形成した。この際、蒸着速度を0.01~0.02nm/秒の範囲内とし、厚さを2nmとした。なお、この電子注入層は金属親和性層の機能を果たす。
以上により、白色に発光する有機EL層を形成した。
さらに、Mg/Ag混合物(Mg:Ag=1:9(vol比))を厚さ10nmで蒸着して第2電極と、その取り出し電極を形成した。
その後、元の真空槽内に移送し、第2電極上に、α-NPD(4,4′-ビス〔N-(1-ナフチル)-N-フェニルアミノ〕ビフェニル)を蒸着速度0.1~0.2nm/秒の範囲内で厚さが40nmとなるまで蒸着し、光取り出し改良を目的とするキャッピング層を形成した。
次に、前記で作製した有機EL素子の発光部を覆う第1封止層として、プラズマCVD法により厚さ500nmの窒化珪素(SiN、ビッカース硬度HV900)を形成した。
次に、窒素環境下で、インクジェット装置のカートリッジ一体型ヘッドへ、前記で調製した封止用組成物1を充填した。そして、前記第1封止層まで形成した有機EL素子を窒素環境下にてインクジェット法を用いて封止用組成物1を塗布した。その後、395nmの空冷LED(Phoseon technology社製)によって1J/cm2の積算エネルギーだけUVを照射し、第2封止層を形成した。第2封止層はインクジェットの塗布回数を調整することで厚さを設定し、以下の2種類の厚さの第2封止層を形成した。
・3μm(1回塗布)
・10μm(3回塗布)
次に、第2封止層上に第3封止層として、プラズマCVD法により厚さ500nmの窒化珪素(SiN、ビッカース硬度HV900)を形成し、第1~第3封止層が形成された評価用の有機EL素子1を得た。
前記有機EL素子1の作製において、前記第2封止層の形成における封止用組成物1を下記表に示すとおりにそれぞれ変更した以外は同様にして、評価用の有機EL素子2~66、101~132及び201~209を作製した。
<封止性能(バリア性)>
評価用の各有機EL素子を高温高湿下(温度85℃、相対湿度85%)の恒温恒湿槽に放置し加速劣化試験を行った。一定時間ごとに恒温恒湿槽から各有機EL素子を取り出して室温下で発光させ、85℃85%での加速劣化時のダークスポット(DS)の有無を確認した。発光領域内におけるダークスポット面積比率が0.5%に到達するまでの時間を寿命と定義し、寿命を評価した。寿命が長いほど、封止性能が高いことを示している。下記評価基準の◎、〇及び△を合格とした。
(評価基準)
××:寿命50時間未満
×:寿命50時間以上100時間未満
△:寿命100時間以上300時間未満
〇:寿命300時間以上500時間未満
◎:寿命500時間以上
各有機EL素子を、直径10mmの金属製ローラーの周囲に巻き付かせて高温高湿下(温度60℃、相対湿度90%)の恒温恒湿槽に放置して加速劣化試験を行った。このとき、フィルム基板であるポリイミドフィルムが金属製ローラーへ接するように巻き付かせている。1500時間後に恒温恒湿槽から各有機EL素子を取り出し室温下で顕微鏡確認及び発光状態(ダークスポット面積比率)を確認した。下記評価基準の◎、〇及び△を合格とした。
(評価基準)
××:封止層の剥離又は非発光
×:ダークスポット面積比率が1%以上
△:ダークスポット面積比率が0.5%以上1%未満
〇:ダークスポット面積比率が0.1%以上0.5%未満
◎:ダークスポット面積比率が0.1%未満
比較用の有機EL素子との発光効率を比較することで、発光特性を評価した。
比較用の有機EL素子は、前記で作製した有機EL素子におけるフィルム基板の代わりに、無アルカリガラスを用いて準備した。
また、第1封止層、第2封止層及び第3封止層を形成する代わりに、窒素雰囲気下で酸化バリウムを添付したガラス製の封止缶にて封止を行った。封止缶と有機EL素子の基板との接着には紫外線硬化型の接着剤を用い、紫外線を照射することで両者を接着し封止素子(比較用の有機EL素子)を作製した。
得られた比較用の有機EL素子及び前記で作製した有機EL素子1~66、101~132及び201~209を、2.5mA/cm2の一定電流を印加した時の正面発光スペクトルを測定し、発光効率(lm/W)を評価した。
なお、測定には分光放射輝度計CS-1000(コニカミノルタ社製)を用いた。比較用の有機EL素子の発光効率に対する、前記有機EL素子1~1~66、101~132及び201~209の発光効率の比を下記評価基準により評価した。下記の◎、〇及び△を合格とした。
(評価基準)
××:発光効率が90%以下
×:90%より大きく100%以下
△:100%より大きく110%以下
〇:110%より大きく120%以下
◎:120%より大きい
窒素環境下にてインクジェット法を用いて封止用組成物を塗布した際の吐出性を評価した。下記の◎、〇及び△を合格とした。
××:ノズル欠陥割合が全体ノズル数の50%以上
×:ノズル欠陥割合が全体ノズル数の10%以上50%未満
△:ノズル欠陥割合が全体ノズル数の1%以上10%未満
〇:ノズル欠陥割合が全体ノズル数の0.1%以上1%未満
◎:ノズル欠陥割合が全体ノズル数0.1%未満
Claims (11)
- 光硬化性モノマー(A)及び光重合開始剤(B)を含有する電子デバイス封止用組成物であって、
前記光硬化性モノマー(A)が、少なくとも鎖状の(メタ)アクリレートモノマー(A1)と、鎖状の(メタ)アクリレートモノマー(A2)とを含有し、
前記鎖状の(メタ)アクリレートモノマー(A2)が、フェニル基、複素環基又はシクロアルキル基のうち、少なくとも一つを有し、
さらに、金属含有化合物(C)を含有し、
前記金属含有化合物(C)が、金属アルコキシド、金属キレート、シラン系化合物、シラザン系化合物及び金属ハロゲン化物のうち、少なくとも一種を含有する電子デバイス封止用組成物。 - 前記鎖状の(メタ)アクリレートモノマー(A1)、前記鎖状の(メタ)アクリレートモノマー(A2)のうち、少なくとも一方が分子量100~1000の範囲内である請求項1に記載の電子デバイス封止用組成物。
- 前記鎖状の(メタ)アクリレートモノマー(A1)が、アルキレン骨格又はエチレンオキシド骨格を有する請求項1又は請求項2に記載の電子デバイス封止用組成物。
- 前記金属含有化合物(C)のうち、前記金属アルコキシド、前記金属キレート及び前記金属ハロゲン化物を構成する金属が、Ti、Si、Al及びZrから選択される請求項1から請求項3までのいずれか一項に記載の電子デバイス封止用組成物。
- 前記鎖状の(メタ)アクリレートモノマー(A1)の、電子デバイス封止用組成物全体に対する含有量が、55~95質量%の範囲内である請求項1から請求項4までのいずれか一項に記載の電子デバイス封止用組成物。
- 前記鎖状の(メタ)アクリレートモノマー(A2)の、電子デバイス封止用組成物全体に対する含有量が、5~45質量%の範囲内である請求項1から請求項5までのいずれか一項に記載の電子デバイス封止用組成物。
- 請求項1から請求項6までのいずれか一項に記載の電子デバイス封止用組成物を用いて、封止膜を形成する方法であって、
電子デバイス上に気相法により第1封止層を形成する工程と、
前記第1封止層上に前記電子デバイス封止用組成物を塗布することにより第2封止層を形成する工程と、を備える電子デバイス封止膜形成方法。 - 前記第2封止層上に、気相法により第3封止層を形成する工程を備える請求項7に記載の電子デバイス封止膜形成方法。
- 前記第2封止層を形成する工程が、インクジェット法を用いる請求項7又は請求項8に記載の電子デバイス封止膜形成方法。
- 電子デバイスを封止する電子デバイス封止膜であって、
窒化ケイ素、酸化ケイ素又は酸窒化ケイ素を含有する第1封止層と、
請求項1から請求項6までのいずれか一項に記載の電子デバイス封止用組成物を用いた第2封止層と、を有する電子デバイス封止膜。 - 前記第2封止層上に、窒化ケイ素、酸化ケイ素又は酸窒化ケイ素を含有する第3封止層を有する請求項10に記載の電子デバイス封止膜。
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WO2014157642A1 (ja) * | 2013-03-29 | 2014-10-02 | 日本化薬株式会社 | エネルギー線硬化型樹脂組成物及びその硬化物 |
WO2018105177A1 (ja) * | 2016-12-06 | 2018-06-14 | Jnc株式会社 | インク組成物およびこれを用いた有機電界発光素子 |
KR20200054900A (ko) * | 2018-11-12 | 2020-05-20 | 주식회사 엘지화학 | 밀봉재 조성물 |
WO2022039019A1 (ja) * | 2020-08-19 | 2022-02-24 | コニカミノルタ株式会社 | 電子デバイス封止用組成物、電子デバイス封止膜形成方法及び電子デバイス封止膜 |
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