Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
  • C08F212/02—Monomers containing only one unsaturated aliphatic radical
  • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F212/06—Hydrocarbons
  • C08F212/08—Styrene
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
  • C08F212/02—Monomers containing only one unsaturated aliphatic radical
  • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F212/06—Hydrocarbons
  • C08F212/12—Monomers containing a branched unsaturated aliphatic radical or a ring substituted by an alkyl radical
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
  • C08F212/02—Monomers containing only one unsaturated aliphatic radical
  • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
  • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
  • C08F212/22—Oxygen
  • C08F212/24—Phenols or alcohols
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/22—Esters containing halogen
  • C08F220/24—Esters containing halogen containing perhaloalkyl radicals
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L25/00—Compositions of, homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Compositions of derivatives of such polymers
  • C08L25/02—Homopolymers or copolymers of hydrocarbons
  • C08L25/04—Homopolymers or copolymers of styrene
  • C08L25/08—Copolymers of styrene
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
  • C08L33/04—Homopolymers or copolymers of esters
  • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D125/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Coating compositions based on derivatives of such polymers
  • C09D125/02—Homopolymers or copolymers of hydrocarbons
  • C09D125/04—Homopolymers or copolymers of styrene
  • C09D125/08—Copolymers of styrene
  • C09D125/14—Copolymers of styrene with unsaturated esters
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
  • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/30—Imagewise removal using liquid means
  • G03F7/32—Liquid compositions therefor, e.g. developers
  • G03F7/322—Aqueous alkaline compositions

Definitions

• the present invention relates to a positive resist composition and a resist pattern forming method.
• ionizing radiation such as electron beams and short-wavelength light such as ultraviolet rays (hereinafter, ionizing radiation and short-wavelength light may be collectively referred to as "ionizing radiation, etc.”).
• Polymers whose main chains are cleaved by irradiation to increase their solubility in developers have been used as positive resists of the main chain scission type.
• Patent Document 1 ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2 is disclosed as a main chain scission type positive resist excellent in sensitivity to ionizing radiation and heat resistance.
• a positive resist composition comprising a positive resist comprising a copolymer containing -trifluoroethyl units and ⁇ -methylstyrene units is disclosed.
• the resist pattern formed using the conventional positive resist composition has room for improvement in terms of reducing the top loss of the resist pattern and increasing the contrast of the resist pattern. .
• an object of the present invention to provide a positive resist composition capable of forming a high-contrast resist pattern with less decrease in the top of the resist pattern.
• Another object of the present invention is to provide a method of forming a resist pattern that can form a high-contrast resist pattern with less decrease in the top of the resist pattern.
• the inventor of the present invention has diligently studied in order to achieve the above purpose. Further, the present inventors have newly discovered that a positive resist composition containing two kinds of predetermined copolymers can be used as a positive resist to reduce the decrease in resist pattern top and form a resist pattern with high contrast. and completed the present invention.
• an object of the present invention is to advantageously solve the above problems, and a positive resist composition of the present invention comprises a copolymer A, a copolymer B, and a solvent,
• the difference between the surface free energy of the copolymer A and the surface free energy of the copolymer B is 4 mJ/m 2 or more.
• the copolymer A, the copolymer B, and the solvent are included, and the difference between the surface free energy of the copolymer A and the surface free energy of the copolymer B is 4 mJ/m 2 or more.
• the "surface free energy" can be measured using the method described in the Examples of the present specification.
• At least one of the copolymer A and the copolymer B is preferably a main chain scission type copolymer containing a halogen atom. And more preferably, at least one of the copolymer A and the copolymer B contains a fluorine substituent, at least one of the halogen atoms is a fluorine atom, and the fluorine atom is included in the fluorine substituent. That is.
• At least one of the copolymer A and the copolymer B is a main chain scission type copolymer containing a halogen atom, and preferably at least one of the copolymer A and the copolymer B contains a fluorine substituent, At least one of the halogen atoms is a fluorine atom, and if the fluorine atom is included in the fluorine substituent, a resist pattern with even less decrease in the top of the resist pattern and a higher contrast can be formed. can be done.
• main chain scission type means that when the copolymer is irradiated with ionizing radiation such as an electron beam or extreme ultraviolet (EUV), the copolymer It means having the property that the main chain is cut.
• ionizing radiation such as an electron beam or extreme ultraviolet (EUV)
• the positive resist composition of the present invention preferably does not substantially contain components having a weight average molecular weight (Mw) of less than 1,000.
• a positive resist composition substantially free of components having a weight-average molecular weight (Mw) of less than 1000 can further enhance the contrast of the resist pattern.
• a "weight average molecular weight” can be measured as a standard polystyrene conversion value using a gel permeation chromatography.
• substantially free means not actively blending except for the case of unavoidable mixing. Specifically, it means that the content of components having a weight average molecular weight (Mw) of less than 1000 in the positive resist composition is less than 0.05% by mass.
• At least one of the copolymer A and the copolymer B has the following formula (V): [In formula (V), X is a halogen atom, a cyano group, an alkylsulfonyl group, an alkoxy group, a nitro group, an acyl group, an alkyl ester group, or a halogenated alkyl group; 10 or less organic groups. ] preferably has a monomer unit (V) represented by If at least one of the copolymer A and the copolymer B has the monomer unit (V), the contrast of the resist pattern can be further enhanced.
• the copolymer A has the following formula (I): [In Formula (I), L is a divalent linking group having a fluorine atom, and Ar is an aromatic ring group optionally having a substituent.
• R 1 is an alkyl group
• R 2 is a hydrogen atom, an alkyl group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carboxyl group, or a halogenated carboxyl group
• R 3 is It is a hydrogen atom, an unsubstituted alkyl group, or an alkyl group substituted with a fluorine atom
• p and q are integers of 0 or more and 5 or less
• p+q 5.
• the contrast of the resist pattern can be further enhanced by using the copolymer A having the monomer unit (I) and the monomer unit (II).
• "optionally having a substituent” means "unsubstituted or having a substituent”.
• a resist pattern forming method of the present invention comprises a step of forming a resist film using any of the positive resist compositions described above. , a step of exposing the resist film, and a step of developing the exposed resist film.
• the development is preferably performed using alcohol. If alcohol is used for development, the contrast of the resist pattern can be further enhanced.
• the present invention it is possible to provide a positive resist composition capable of forming a high-contrast resist pattern with little decrease in resist pattern top. Further, according to the present invention, it is possible to provide a method of forming a resist pattern that can form a high-contrast resist pattern with little decrease in the top of the resist pattern.
• the positive resist composition of the present invention is used for forming a resist film when forming a resist pattern using ionizing radiation such as an electron beam or EUV.
• the resist pattern forming method of the present invention forms a resist pattern using the positive resist composition of the present invention.
• the resist pattern forming method of the present invention is not particularly limited, and can be used, for example, when forming a resist pattern in the manufacturing process of semiconductors, photomasks, molds, and the like.
• the positive resist composition of the present invention contains a copolymer A, a copolymer B, and a solvent, which will be described in detail below, and optionally further known additives that can be incorporated into the positive resist composition. contains.
• the positive resist composition of the present invention contains a copolymer A and a copolymer B, and the difference between the surface free energy of the copolymer A and the surface free energy of the copolymer B is 4 mJ/m 2 or more.
• the positive resist composition of the present invention contains the copolymer A and the copolymer B having a surface free energy difference of 4 mJ/m 2 or more as positive resists, the positive resist composition By using a material, it is possible to reduce the reduction of the resist pattern top and form a resist pattern with high contrast.
• the positive resist composition of the present invention preferably does not substantially contain components having a weight average molecular weight (Mw) of less than 1000. Specifically, the weight average molecular weight (Mw ) is less than 1000 is less than 0.05% by mass, preferably less than 0.01% by mass, and more preferably less than 0.001% by mass.
• Copolymer A contained in the positive resist composition of the present invention is not particularly limited as long as the difference between the surface free energy of the copolymer A and the surface energy of the copolymer B is 4 mJ/m 2 or more.
• Copolymer A is preferably a main-chain scission type copolymer containing a halogen atom, since it is possible to form a resist pattern with a higher contrast while further reducing the decrease in the top of the resist pattern. More preferably, it contains a fluorine substituent, at least one of the halogen atoms is a fluorine atom, and the fluorine atom is included in the fluorine substituent.
• the fluorine substituent is not particularly limited as long as it is a substituent having a fluorine atom.
• the surface free energy of copolymer A is preferably 28 mJ/m 2 or more, more preferably 29 mJ/m 2 or more, still more preferably 30 mJ/m 2 or more, and 35 mJ/m 2 or more. It is preferably m 2 or less, more preferably 34 mJ/m 2 or less, and even more preferably 33 mJ/m 2 or less.
• the copolymer A contained in the positive resist composition of the present invention has the following formula (V): [In formula (V), X is a halogen atom, a cyano group, an alkylsulfonyl group, an alkoxy group, a nitro group, an acyl group, an alkyl ester group, or a halogenated alkyl group; 10 or less organic groups. ] preferably has a monomer unit (V) represented by
• the monomer unit (V) is represented by the following formula (e): [In Formula (e), X and R 1 are the same as in Formula (V). ] is a structural unit derived from the monomer (e) represented by
• the ratio of the monomer unit (e) in the total monomer units constituting the copolymer A is not particularly limited, and can be, for example, 30 mol% or more, preferably 40 mol% or more. , more preferably 45 mol% or more, can be 70 mol% or less, preferably 60 mol% or less, more preferably 55 mol% or less.
• examples of halogen atoms that can constitute X in formulas (V) and (e) include chlorine, fluorine, bromine, iodine and astatine atoms.
• alkylsulfonyl groups that can constitute X in formulas (V) and (e) include methylsulfonyl groups and ethylsulfonyl groups.
• alkoxy groups that can constitute X in formulas (V) and (e) include methoxy, ethoxy, and propoxy groups.
• Acyl groups that can constitute X in formulas (V) and (e) include formyl, acetyl and propionyl groups.
• alkyl ester group that can constitute X in formulas (V) and (e) includes a methyl ester group, an ethyl ester group, and the like.
• halogenated alkyl groups that can constitute X in formulas (V) and (e) include halogenated methyl groups having 1 to 3 halogen atoms.
• X is preferably a halogen atom, more preferably a chlorine atom.
• R 1 in formulas (V) and (e) is an organic group having 3 or more and 10 or less fluorine atoms, and the number of fluorine atoms contained in R 1 is 5 or more and 7 or less. preferable. If the number of fluorine atoms contained in R 1 is at least the above lower limit, the copolymer A is useful as a main chain scission type positive resist. Moreover, when the number of fluorine atoms contained in R 1 is equal to or less than the above upper limit, the production efficiency of the copolymer A is excellent.
• the organic group having 3 or more and 10 or less (preferably 5 or more and 7 or less) fluorine atoms is not particularly limited. fluoroalkyl groups having 3 to 10 atoms; fluoroalkoxyalkyl groups having 3 to 10 fluorine atoms, such as (a-31) to (a-54) below; fluoroethoxyvinyl groups, etc. , a fluoroalkoxyalkenyl group having 3 or more and 10 or less fluorine atoms; an organic group represented by the following formula (A) (hereinafter referred to as "organic group (A)"); and the like.
• L is a divalent linking group
• Ar is an optionally substituted aromatic ring group
• the number of fluorine atoms contained in the organic group (A) is 3 or more and 10 or less (preferably 5 or more and 7 or less).
• the divalent linking group that may constitute L in the organic group (A) is not particularly limited, and for example, an alkylene group optionally having a substituent, an alkylene group optionally having a substituent, and a good alkenylene group.
• the alkylene group of the alkylene group optionally having a substituent is not particularly limited, and examples thereof include chain alkylene groups such as methylene group, ethylene group, propylene group, n-butylene group and isobutylene group. , and cyclic alkylene groups such as a 1,4-cyclohexylene group.
• the alkylene group is preferably a chain alkylene group having 1 to 6 carbon atoms such as methylene group, ethylene group, propylene group, n-butylene group and isobutylene group, and methylene group, ethylene group, propylene group and n-butylene group.
• a linear alkylene group having 1 to 6 carbon atoms such as a group is more preferable, and a linear alkylene group having 1 to 3 carbon atoms such as a methylene group, an ethylene group, and a propylene group is more preferable.
• the alkenylene group of the alkenylene group which may have a substituent is not particularly limited. and cyclic alkenylene groups such as a cyclohexenylene group.
• the alkenylene group is preferably a linear alkenylene group having 2 to 6 carbon atoms such as ethenylene group, 2-propenylene group, 2-butenylene group and 3-butenylene group.
• the divalent linking group is preferably an alkylene group optionally having a substituent, and the substituent is An optionally substituted chain alkylene group having 1 to 6 carbon atoms is more preferable, and a linear alkylene group having 1 to 6 carbon atoms which may have a substituent is more preferable, and has a substituent.
• the divalent linking group that can constitute L of the organic group (A) preferably has one or more electron-withdrawing groups.
• the divalent linking group is an alkylene group having an electron-withdrawing group as a substituent or an alkenylene group having an electron-withdrawing group as a substituent
• the electron-withdrawing group is attached to the carbonyl carbon in formula (V). It is preferably bonded to a carbon that is bonded to an adjacent O.
• the electron-withdrawing group capable of sufficiently improving the sensitivity to ionizing radiation is not particularly limited. seeds.
• the fluoroalkyl group is not particularly limited, and examples thereof include fluoroalkyl groups having 1 to 5 carbon atoms. Among them, the fluoroalkyl group is preferably a perfluoroalkyl group having 1 to 5 carbon atoms, more preferably a trifluoromethyl group.
• L in the organic group (A) is preferably a divalent linking group containing 3 or more and 10 or less fluorine atoms.
• a divalent linking group having a number of 3 or more and 6 or less is more preferable, and a trifluoromethylmethylene group, a pentafluoroethylmethylene group or a bis(trifluoromethyl)methylene group is even more preferable.
• Ar in the organic group (A) includes an aromatic hydrocarbon ring group which may have a substituent and an aromatic heterocyclic group which may have a substituent.
• the aromatic hydrocarbon ring group is not particularly limited, and examples thereof include a benzene ring group, a biphenyl ring group, a naphthalene ring group, an azulene ring group, an anthracene ring group, a phenanthrene ring group, a pyrene ring group, and a chrysene ring group.
• the aromatic heterocyclic group is not particularly limited, and examples thereof include a furan ring group, a thiophene ring group, a pyridine ring group, a pyridazine ring group, a pyrimidine ring group, a pyrazine ring group, a triazine ring group, and an oxadiazole.
• substituents that Ar may have are not particularly limited, and include, for example, alkyl groups, fluorine atoms and fluoroalkyl groups.
• alkyl group as the substituent that Ar may have include chain alkyl groups having 1 to 6 carbon atoms such as methyl group, ethyl group, propyl group, n-butyl group and isobutyl group.
• the fluoroalkyl group as a substituent that Ar may have includes, for example, a fluoroalkyl group having 1 to 5 carbon atoms such as a trifluoromethyl group, a trifluoroethyl group, and a pentafluoropropyl group.
• Ar in the organic group (A) is preferably an aromatic hydrocarbon ring group which may have a substituent, and an unsubstituted aromatic hydrocarbon group.
• a hydrocarbon ring group is more preferred, and a benzene ring group (phenyl group) is even more preferred.
• the monomer (e) represented by the formula (V) is not particularly limited, and examples thereof include 2,2,2-trifluoroethyl ⁇ -chloroacrylate, 2,2-trifluoroethyl ⁇ -chloroacrylate, 2,3,3,3-pentafluoropropyl, 3,3,4,4,4-pentafluorobutyl ⁇ -chloroacrylate, 1H-1-(trifluoromethyl)trifluoroethyl ⁇ -chloroacrylate, ⁇ - 1H,1H,3H-hexafluorobutyl chloroacrylate, 1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl ⁇ -chloroacrylate, 2,2,3 ⁇ -chloroacrylate, ⁇ -chloroacrylic acid fluoroalkyl esters such as 3,4,4,4-heptafluorobutyl; ⁇ -chloroacrylics such as ⁇ -chloroacrylic acid pen
• the monomer (e) represented by the formula (V) is ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2 , 2,2-trifluoroethyl, ⁇ -chloroacrylate-1-phenyl-2,2,2-trifluoroethyl, or ⁇ -chloroacrylate-1-phenyl-2,2,3,3,3 - pentafluoropropyl is preferred, ⁇ -1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl ⁇ -chloroacrylate or ⁇ -1-phenyl-2,2,3-chloroacrylate ,3,3-pentafluoropropyl is more preferred.
• the copolymer A contained in the positive resist composition of the present invention has the following formula (I): [In the formula (I), L is a divalent linking group having a fluorine atom, and Ar is an aromatic group optionally having a substituent.
• R 1 is an alkyl group
• R 2 is a hydrogen atom, an alkyl group, a halogen atom, a halogenated alkyl group, a hydroxyl group, a carboxyl group, or a halogenated carboxyl group
• R 3 is It is a hydrogen atom, an unsubstituted alkyl group, or an alkyl group substituted with a fluorine atom
• p and q are integers of 0 or more and 5 or less
• p+q 5.
• the copolymer A may contain any monomer unit other than the monomer unit (I) and the monomer unit (II), but all the monomers constituting the copolymer A
• the ratio of the monomer units (I) and the monomer units (II) in the units is preferably 90 mol% or more in total, and is 100 mol% (that is, the copolymer A contains the monomer units (I) and the monomeric unit (II) only) is more preferred.
• the copolymer A contains the monomer unit (I) and the monomer unit (II), when irradiated with an electron beam or the like, the main chain is cut and the molecular weight is efficiently reduced.
• the monomeric unit (I) is represented by the following formula (a): [In Formula (a), L and Ar are the same as in Formula (I). ] is a structural unit derived from the monomer (a) represented by
• the divalent linking group having a fluorine atom that can constitute L in the formula (I) and the formula (a) includes, for example, a divalent chain alkyl having 1 to 5 carbon atoms and having a fluorine atom and the like.
• the number of fluorine atoms is 3 or more and 10 or less, preferably 5 or more and 7 or less.
• aromatic ring group optionally having substituent(s) that can constitute Ar in formula (I) and formula (a) includes an aromatic hydrocarbon ring group optionally having substituent(s), and an aromatic heterocyclic group optionally having a substituent.
• the aromatic hydrocarbon ring group is not particularly limited, and includes, for example, the same aromatic hydrocarbon ring groups that can constitute Ar in the above formulas (V) and (e). be done.
• aromatic heterocyclic group is not particularly limited, and includes, for example, the same aromatic heterocyclic groups that can constitute Ar in formula (V) and formula (e) described above.
• substituent that Ar may have is not particularly limited, and examples thereof include the same substituents that Ar in formula (V) and formula (e) described above may have.
• Ar in the formula (I) and the formula (a) is preferably an aromatic hydrocarbon ring group optionally having a substituent.
• a substituted aromatic hydrocarbon ring group is more preferred, and a benzene ring group (phenyl group) is even more preferred.
• the monomer represented by the above formula (a) that can form the monomer unit (I) represented by the above formula (I) As the body (a), ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl (ACAFPh) and ⁇ -chloroacrylate-1-(4-methoxyphenyl) -1-trifluoromethyl-2,2,2-trifluoroethyl (ACAFPhOMe) is preferred, and ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl is more preferred .
• copolymer A contains ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl units and ⁇ -chloroacrylate-1-(4-methoxyphenyl)- It preferably has at least one of 1-trifluoromethyl-2,2,2-trifluoroethyl units, and ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl It is more preferable to have units.
• the ratio of the monomer units (I) in the total monomer units constituting the copolymer A is not particularly limited, and may be, for example, 30 mol% or more, and may be 40 mol% or more. is preferably 45 mol% or more, and can be 70 mol% or less, preferably 60 mol% or less, and more preferably 55 mol% or less.
• the monomer unit (II) has the following formula (b): [In formula (b), R 1 and R 2 , and p and q are the same as in formula (II). ] is a structural unit derived from the monomer (b) represented by
• the alkyl group that can constitute R 1 and R 2 in formula (II) and formula (b) is not particularly limited, and examples thereof include unsubstituted alkyl groups having 1 to 5 carbon atoms. . Among them, the alkyl group that can constitute R 1 and R 2 is preferably a methyl group or an ethyl group.
• the halogen atom that can constitute R 2 in the formulas (II) and (b) is not particularly limited, and includes a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like. Among them, a fluorine atom is preferable as the halogen atom.
• the halogenated alkyl group that can constitute R 2 in formula (II) and formula (b) is not particularly limited, and includes, for example, a fluoroalkyl group having 1 to 5 carbon atoms.
• the halogenated alkyl group is preferably a perfluoroalkyl group having 1 to 5 carbon atoms, more preferably a trifluoromethyl group.
• R 1 in formula (II) and formula (b) has 1 carbon atom.
• An alkyl group of ⁇ 5 is preferred, and a methyl group is more preferred.
• R 2 in formula (II) and formula (b) is an alkyl group having 1 to 5 carbon atoms. is preferred, and a methyl group is more preferred.
• the unsubstituted alkyl group that can constitute R 3 in formulas (II) and (b) is not particularly limited, and includes an unsubstituted alkyl group having 1 to 5 carbon atoms. Among them, the unsubstituted alkyl group that can constitute R 3 is preferably a methyl group or an ethyl group.
• fluorine atom-substituted alkyl group that may constitute R 3 in formulas (II) and (b) is not particularly limited, and some or all of the hydrogen atoms in the alkyl group may be substituted with fluorine atoms.
• a group having a structure substituted with is exemplified.
• the monomer (b) represented by the above formula (b), which can form the monomer unit (II) represented by the above formula (II), is not particularly limited, Examples thereof include ⁇ -methylstyrene (AMS) such as the following monomers (b-1) to (b-12) and derivatives thereof.
• AMS ⁇ -methylstyrene
• the above-described formula ( ⁇ -Methylstyrene is preferred as the monomer (b) represented by b). That is, the copolymer A preferably has ⁇ -methylstyrene units.
• the ratio of the monomer units (II) in the total monomer units constituting the copolymer A is not particularly limited, and may be, for example, 30 mol% or more, and may be 40 mol% or more. is preferably 45 mol% or more, and can be 70 mol% or less, preferably 60 mol% or less, and more preferably 55 mol% or less.
• the weight average molecular weight (Mw) of copolymer A is preferably 100,000 or more, more preferably 125,000 or more, still more preferably 150,000 or more, preferably 600,000 or less, and preferably 500,000 or less. It is more preferable to have When the weight-average molecular weight (Mw) of the copolymer A is at least the above lower limit, the reduction of the top of the resist pattern can be further reduced, and a resist pattern with further improved contrast can be formed. Moreover, if the weight average molecular weight (Mw) of the copolymer A is equal to or less than the above upper limit value, it is possible to facilitate adjustment of the positive resist composition.
• the number average molecular weight (Mn) of copolymer A is preferably 100,000 or more, more preferably 110,000 or more, preferably 300,000 or less, and more preferably 200,000 or less.
• the number average molecular weight of the copolymer A is at least the above lower limit, it is possible to further reduce the decrease in the top of the resist pattern and form a resist pattern with further improved contrast.
• the number average molecular weight of the copolymer A is equal to or less than the above upper limit, the preparation of the positive resist composition is further facilitated.
• the molecular weight distribution (Mw/Mn) of the copolymer A is preferably 1.20 or more, more preferably 1.25 or more, further preferably 1.30 or more. 00 or less, more preferably 1.80 or less, and even more preferably 1.60 or less.
• the "number average molecular weight” can be measured as a standard polystyrene conversion value using gel permeation chromatography, and the "molecular weight distribution” is the ratio of the weight average molecular weight to the number average molecular weight (weight average molecular weight It can be obtained by calculating the molecular weight/number average molecular weight).
• a method for preparing the copolymer A is not particularly limited.
• the copolymer A having the monomer unit (V) described above has a monomer composition containing the monomer (e) and any monomer copolymerizable with the monomer (e)
• the resulting copolymer can be recovered and optionally purified.
• the composition, molecular weight distribution, number average molecular weight and weight average molecular weight of copolymer A can be adjusted by changing polymerization conditions and purification conditions. Specifically, for example, the number average molecular weight and weight average molecular weight can be increased by lowering the polymerization temperature. Also, the number average molecular weight and weight average molecular weight can be increased by shortening the polymerization time. Furthermore, purification can narrow the molecular weight distribution.
• the monomer composition used for preparing the copolymer A for example, a monomer containing the monomer (e) and any monomer copolymerizable with the monomer (e) Mixtures of the components, optional solvents, optional polymerization initiators, and optional additives can be used. Polymerization of the monomer composition can then be carried out using known methods. Among them, it is preferable to use cyclopentanone, water, or the like as the solvent.
• the polymer obtained by polymerizing the monomer composition is not particularly limited. After adding a good solvent such as tetrahydrofuran to a solution containing the polymer, The polymer can be recovered by dropping it into a poor solvent such as ethanol, 1-propanol, 1-butanol, 1-pentanol, hexane, etc. to solidify the polymer.
• a good solvent such as tetrahydrofuran
• a poor solvent such as ethanol, 1-propanol, 1-butanol, 1-pentanol, hexane, etc.
• the purification method used for purifying the obtained polymer is not particularly limited, and known purification methods such as reprecipitation and column chromatography can be used. Among them, it is preferable to use a reprecipitation method as the purification method.
• the purification of the polymer may be repeated multiple times.
• Purification of the polymer by the reprecipitation method is performed, for example, by dissolving the obtained polymer in a good solvent such as tetrahydrofuran, and then dissolving the resulting solution in a good solvent such as tetrahydrofuran with methanol, ethanol, 1-propanol, It is preferable to add dropwise to a mixed solvent with a poor solvent such as 1-butanol, 1-pentanol, hexane, etc. to precipitate a part of the polymer.
• a good solvent such as tetrahydrofuran
• a poor solvent such as 1-butanol, 1-pentanol, hexane, etc.
• molecular weight distribution, number average molecular weight and weight average molecular weight can be easily adjusted. Specifically, for example, the higher the ratio of the good solvent in the mixed solvent, the greater the molecular weight of the copolymer that precipitates in the mixed solvent.
• the copolymer A When the polymer is purified by a reprecipitation method, as the copolymer A, a polymer precipitated in a mixed solvent of a good solvent and a poor solvent may be used as long as the desired properties are satisfied. A polymer that did not precipitate in the solvent (that is, a polymer dissolved in the mixed solvent) may be used.
• the polymer that has not precipitated in the mixed solvent can be recovered from the mixed solvent using a known technique such as concentration to dryness.
• Copolymer B contained in the positive resist composition of the present invention is particularly limited if the difference between the surface free energy of the copolymer B and the surface free energy of the copolymer A is 4 mJ/m 2 or more. not.
• Copolymer B is preferably a main-chain scission type copolymer containing a halogen atom, since the reduction of the top of the resist pattern is further reduced and a resist pattern with a higher contrast can be formed. More preferably, it contains a fluorine substituent, at least one of the halogen atoms is a fluorine atom, and the fluorine atom is included in the fluorine substituent.
• the fluorine substituent is not particularly limited as long as it is a substituent having a fluorine atom.
• the surface free energy of copolymer B is preferably 18 mJ/m 2 or more, more preferably 19 mJ/m 2 or more, even more preferably 20 mJ/m 2 or more, and 27 mJ/m 2 or more. It is preferably m 2 or less, more preferably 26 mJ/m 2 or less, and even more preferably 25 mJ/m 2 or less.
• the surface free energy of the copolymer B is the difference between the surface free energy of the copolymer A [that is, the value of (surface free energy of the copolymer A) - (surface free energy of the copolymer B)] should be 4 mJ/ m2 or more, and this difference is preferably 5.5 mJ/ m2 or more, more preferably 6 mJ/ m2 or more, and more preferably 6.5 mJ/ m2 or more. is more preferably 12 mJ/m 2 or less, more preferably 11 mJ/m 2 or less, even more preferably 10 mJ/m 2 or less.
• the copolymer B preferably has the monomer unit (V) represented by the formula (V) described in the ⁇ Copolymer A> section.
• the monomer unit (V) that the copolymer B may have can be the same as the monomer unit (V) described in the section ⁇ Copolymer A>, so the explanation here is as follows. are omitted.
• the ratio of the monomer units (e) in the total monomer units constituting the copolymer B is not particularly limited, and can be, for example, 30 mol% or more, preferably 40 mol% or more. , more preferably 45 mol% or more, can be 70 mol% or less, preferably 60 mol% or less, more preferably 55 mol% or less.
• the copolymer B contained in the positive resist composition of the present invention has the following formula (III): [In the formula (III), R 1 is an organic group having 5 or more and 7 or less fluorine atoms.
• R 1 is an alkyl group
• R 2 is a hydrogen atom, a fluorine atom, an unsubstituted alkyl group or a fluorine atom-substituted alkyl group
• R 3 is a hydrogen atom
• It is an unsubstituted alkyl group or an alkyl group substituted with a fluorine atom
• the copolymer B may contain any monomer unit other than the monomer units (III) and the monomer units (IV), but all the monomers constituting the copolymer B
• the ratio of the monomer units (III) and the monomer units (IV) in the units is preferably 90 mol% or more in total, and is 100 mol% (that is, the copolymer B is a monomer unit (III) and only the monomer unit (IV)) is more preferred.
• the copolymer B contains the monomer unit (III) and the monomer unit (IV), when irradiated with an electron beam or the like, the main chain is cut and the molecular weight is efficiently reduced. Further, the copolymer B preferably has a fluorine atom in the monomer unit (III), so that the surface free energy of the copolymer B can be easily adjusted by using the positive resist composition of the present invention. , and has resistance to forward scattering and backward scattering due to electron beams and leakage light such as EUV, and can further increase the pattern contrast.
• the number of carbon atoms in R 1 is preferably 2 or more and 10 or less, more preferably 5 or less. If the number of carbon atoms is at least the above lower limit, the solubility in the developer can be sufficiently improved. Further, when the number of carbon atoms is equal to or less than the above upper limit, the clarity of the resist pattern can be sufficiently ensured.
• R 1 in formulas (III) and (c) is preferably a fluoroalkyl group, a fluoroalkoxyalkyl group, or a fluoroalkoxyalkenyl group, more preferably a fluoroalkyl group. If R 1 is the group described above, the scission of the main chain of copolymer B upon irradiation with an electron beam or the like can be sufficiently improved.
• examples of the fluoroalkyl group include a 2,2,3,3,3-pentafluoropropyl group (having 5 fluorine atoms and 3 carbon atoms), 3,3,4,4,4-pentafluoropropyl fluorobutyl group (5 fluorine atoms, 4 carbon atoms), 1H-1-(trifluoromethyl)trifluoroethyl group (6 fluorine atoms, 3 carbon atoms), 1H, 1H, 3H- Hexafluorobutyl group (6 fluorine atoms, 4 carbon atoms), 2,2,3,3,4,4,4-heptafluorobutyl group (7 fluorine atoms, 4 carbon atoms) , and 1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl group (having 7 fluorine atoms and 3 carbon atoms).
• a 2,2,3,3,3-pentafluoropropyl group (having 5 fluorine atoms and 3 carbon atoms) or 2,2,3,3,4,4,4-heptafluorobutyl A group (having 7 fluorine atoms and 4 carbon atoms) is preferred, and a 2,2,3,3,3-pentafluoropropyl group (having 5 fluorine atoms and 3 carbon atoms) is more preferred.
• the fluoroalkoxyalkyl group include a fluoroethoxymethyl group and a fluoroethoxyethyl group.
• fluoroalkoxyalkenyl groups include fluoroethoxyvinyl groups.
• the monomer (c) represented by the above formula (c), which can form the monomer unit (III) represented by the above formula (III), is not particularly limited, For example, ⁇ -chloroacrylate 2,2,3,3,3-pentafluoropropyl, ⁇ -chloroacrylate 3,3,4,4,4-pentafluorobutyl, ⁇ -chloroacrylate 1H-1-( trifluoromethyl)trifluoroethyl, 1H,1H,3H-hexafluorobutyl ⁇ -chloroacrylate, 1,2,2,2-tetrafluoro-1-(trifluoromethyl)ethyl ⁇ -chloroacrylate, ⁇ - ⁇ -Chloroacrylic acid fluoroalkyl esters such as 2,2,3,3,4,4,4-heptafluorobutyl chloroacrylate; ⁇ -chloroacrylic acid pentafluoroethoxymethyl ester, ⁇ -chloroacrylic acid pentaflu
• the monomer unit (III) is a structural unit derived from ⁇ -chloroacrylic acid fluoroalkyl ester. is preferably The ratio of the monomer units (III) in the total monomer units constituting the copolymer B is not particularly limited, and may be, for example, 30 mol% or more, and may be 40 mol% or more. is preferably 45 mol% or more, and can be 70 mol% or less, preferably 60 mol% or less, and more preferably 55 mol% or less.
• the monomer unit (IV) has the following general formula (d): [In formula (d), R 1 to R 3 and p and q are the same as in formula (IV). ) is a structural unit derived from the monomer (d) represented by
• the alkyl group that can constitute R 1 in formula (IV) and formula (d) is not particularly limited, and includes an alkyl group having 1 or more and 5 or less carbon atoms. Among them, the alkyl group that can constitute R 1 is preferably a methyl group or an ethyl group.
• the unsubstituted alkyl group that can constitute R 2 and R 3 in formulas (IV) and (d) is not particularly limited, and includes an unsubstituted alkyl group having 1 to 5 carbon atoms. be done. Among them, the unsubstituted alkyl group that can constitute R 2 and R 3 is preferably a methyl group or an ethyl group.
• the fluorine atom-substituted alkyl group that can constitute R 2 and R 3 in formulas (IV) and (d) is not particularly limited, and some or all of the hydrogen atoms in the alkyl group are A group having a structure substituted with a fluorine atom is included.
• R 2 and / or R 3 present in plurality in formula (IV) and formula (d) are hydrogen atoms or unsubstituted alkyl is preferably a group, preferably a hydrogen atom or an unsubstituted alkyl group having 1 to 5 carbon atoms, preferably a hydrogen atom.
• the monomer (d) represented by the above formula (d), which can form the monomer unit (IV) represented by the above formula (IV), is not particularly limited, Examples thereof include ⁇ -methylstyrene (AMS) such as the following monomers (d-1) to (d-11) and derivatives thereof (eg, 4-fluoro- ⁇ -methylstyrene: 4FAMS).
• AMS ⁇ -methylstyrene
• Preferred monomers (d) represented by d) are ⁇ -methylstyrene and 4-fluoro- ⁇ -methylstyrene. That is, copolymer B preferably has ⁇ -methylstyrene units or 4-fluoro- ⁇ -methylstyrene units.
• the ratio of the monomer units (IV) in the total monomer units constituting the copolymer B is not particularly limited, and may be, for example, 30 mol% or more, and may be 40 mol% or more. is preferably 45 mol% or more, and can be 70 mol% or less, preferably 60 mol% or less, and more preferably 55 mol% or less.
• the weight average molecular weight (Mw) of copolymer B is preferably 10,000 or more, more preferably 17,000 or more, still more preferably 25,000 or more, and preferably 250,000 or less, and 180,000 or less. It is more preferably 50,000 or less.
• the weight-average molecular weight (Mw) of the copolymer B is at least the above lower limit, it is possible to suppress excessive increase in the solubility of the resist film in the developer at a low irradiation dose. Further, when the weight average molecular weight (Mw) of the copolymer B is equal to or less than the above upper limit, it is easy to prepare a positive resist composition.
• the number average molecular weight (Mn) of copolymer B is preferably 7,000 or more, more preferably 10,000 or more, and preferably 150,000 or less. If the number average molecular weight of the copolymer B is at least the above lower limit, it is possible to further suppress the excessive increase in the solubility of the resist film in a developer at a low irradiation dose, and to form a resist pattern with a further improved contrast. can be formed. Moreover, when the number average molecular weight of the copolymer B is equal to or less than the above upper limit, it is easier to prepare a positive resist composition.
• the molecular weight distribution (Mw/Mn) of copolymer B is preferably 1.10 or more, more preferably 1.20 or more, preferably 1.70 or less, and 1.65. The following are more preferable. If the molecular weight distribution (Mw/Mn) of the copolymer B is at least the above lower limit, the ease of production of the copolymer B can be enhanced. Moreover, if the molecular weight distribution (Mw/Mn) of the copolymer B is equal to or less than the above upper limit, the contrast of the resulting resist pattern can be further enhanced.
• a method for preparing the copolymer B is not particularly limited.
• the copolymer B having the monomer unit (V) described above has a monomer composition containing the monomer (e) and any monomer copolymerizable with the monomer (e) After polymerizing the material, the resulting copolymer can be recovered and optionally purified.
• the polymerization method and purification method are not particularly limited, and may be the same as the polymerization method and purification method of copolymer A described above.
• it is preferable to use a polymerization initiator when preparing the copolymer B and for example, a polymerization initiator such as azobisisobutyronitrile can be preferably used.
• the solvent is not particularly limited as long as it is a solvent capable of dissolving the above-described copolymer A and copolymer B.
• known solvents such as those described in Japanese Patent No. 5938536 can be used. can.
• anisole, propylene glycol monomethyl ether acetate (PGMEA), cyclopentanone, and cyclohexanone are used as solvents from the viewpoint of obtaining a positive resist composition having an appropriate viscosity and improving the coatability of the positive resist composition.
• isoamyl acetate is preferably used.
• a positive resist composition can be prepared by mixing the above-described copolymer A, copolymer B, solvent, and optionally known additives.
• both the copolymer A and the copolymer B are main chain scission type copolymers containing halogen atoms. More preferably, both the copolymer A and the copolymer B contain a fluorine substituent, at least one of the halogen atoms is a fluorine atom, and the fluorine atom is attached to the fluorine substituent to be included.
• one of the copolymer A and the copolymer B preferably has a monomer unit represented by the formula (V) described above, and the copolymer A and the copolymer B More preferably, both have monomeric units represented by formula (V) above.
• the copolymer A has a monomer unit (I) represented by the above formula (I) and a monomer unit (II) represented by the formula (II).
• the copolymer B has a monomer unit represented by the above formula (III) and a monomer unit (IV) represented by the formula (IV).
• the method of mixing the above components is not particularly limited, and they may be mixed by a known method. Moreover, you may filter and prepare a mixture after mixing each component.
• the method for filtering the mixture is not particularly limited, and for example, it can be filtered using a filter.
• the filter is not particularly limited, and includes, for example, fluorocarbon-based, cellulose-based, nylon-based, polyester-based, and hydrocarbon-based filtration membranes.
• the filter is configured.
• Polyfluorocarbons such as polyethylene, polypropylene, polytetrafluoroethylene, and Teflon (registered trademark), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), nylon, and a composite film of polyethylene and nylon are preferable as the material to be coated.
• filters for example, those disclosed in US Pat. No. 6,103,122 may be used.
• a commercially available product such as Zeta Plus (registered trademark) 40Q manufactured by CUNO Incorporated may be used.
• the filter may contain a strongly cationic or weakly cationic ion exchange resin.
• the average particle size of the ion exchange resin is not particularly limited, but is preferably 2 ⁇ m or more and 10 ⁇ m or less.
• Cation exchange resins include, for example, sulfonated phenol-formaldehyde condensates, sulfonated phenol-benzaldehyde condensates, sulfonated styrene-divinylbenzene copolymers, sulfonated methacrylic acid-divinylbenzene copolymers, and Other types of sulfonic acid or carboxylic acid group-containing polymers and the like are included.
• the cation exchange resin is provided with H + counterions, NH 4 + counterions or alkali metal counterions such as K + and Na + counterions. And the cation exchange resin preferably has a hydrogen counterion.
• Such cation exchange resins include Microlite® PrCH from Purolite, a sulfonated styrene-divinylbenzene copolymer with H 2 + counterions.
• Such cation exchange resins are commercially available as AMBERLYST® from Rohm and Haas.
• the pore size of the filter is preferably 0.001 ⁇ m or more and 1 ⁇ m or less. If the pore size of the filter is within the above range, it is possible to sufficiently prevent impurities such as metals from entering the positive resist composition.
• the proportion of copolymer A and copolymer B in the positive resist composition of the present invention is not particularly limited, but the proportion of copolymer B is the total of copolymer A and copolymer B. Per 100% by mass, it is preferably 1% by mass or more, more preferably 5% by mass or more, even more preferably 10% by mass or more, preferably 30% by mass or less, and 25% by mass. % or less, and even more preferably 20 mass % or less.
• the proportion of the copolymer B is at least the above lower limit, it is possible to suppress the excessive increase in the solubility of the resist film in the developing solution at a low irradiation dose, and to form a resist pattern with further improved contrast. can be done. Moreover, if the proportion of the copolymer B is equal to or less than the above upper limit, deterioration of the sensitivity of the positive resist can be suppressed.
• the method for forming a resist pattern of the present invention includes a step of forming a resist film using the positive resist composition of the present invention described above (resist film forming step), a step of exposing the resist film (exposure step), and and a step of developing the resist film (developing step).
• the resist pattern forming method of the present invention may further include steps other than the resist film forming step, exposure step and developing step described above.
• the resist pattern forming method of the present invention may include, before the resist film forming step, a step of forming an underlayer film on the substrate on which the resist film is to be formed (underlayer film forming step).
• the resist pattern forming method of the present invention may include a step of heating the exposed resist film (post-exposure bake step) between the exposure step and the development step. Moreover, the resist pattern forming method of the present invention may further include a step of removing the developer (rinsing step) after the developing step. After forming the resist pattern by the method of forming a resist pattern of the present invention, the method may further include a step of etching the underlying film and/or the substrate (etching step).
• the positive resist composition containing the predetermined copolymer A and copolymer B is used as the positive resist composition. As a result, a high-contrast resist pattern can be formed.
• resist film forming step the positive resist composition of the present invention is applied onto a workpiece such as a substrate to be processed using a resist pattern, and the applied positive resist composition is dried to form a resist film. to form
• the substrate on which the resist film can be formed in the resist pattern forming method is not particularly limited, and has an insulating layer and a copper foil provided on the insulating layer, which is used for manufacturing printed circuit boards and the like.
• Substrate; and mask blanks having a light-shielding layer formed on the substrate, or the like can be used.
• Materials for the substrate include, for example, metals (silicon, copper, chromium, iron, aluminum, etc.), glass, titanium oxide, silicon dioxide (SiO 2 ), silica, inorganic substances such as mica; nitrides such as SiN; Oxynitrides; organic substances such as acryl, polystyrene, cellulose, cellulose acetate, and phenolic resins; Among them, metal is preferable as the material of the substrate.
• a substrate such as a silicon substrate, a silicon dioxide substrate or a copper substrate, preferably a silicon substrate or a silicon dioxide substrate, a structure with a cylindrical structure can be formed.
• the size and shape of the substrate are not particularly limited.
• the surface of the substrate may be smooth, curved, uneven, or flake-shaped.
• the surface of the substrate may be surface-treated as necessary.
• the surface of the substrate in the case of a substrate having hydroxyl groups on its surface layer, the surface of the substrate can be treated using a silane-based coupling agent capable of reacting with hydroxyl groups.
• the surface layer of the substrate can be changed from hydrophilic to hydrophobic, and the adhesion between the substrate and the underlying film or between the substrate and the resist layer can be enhanced.
• the silane-based coupling agent is not particularly limited, but hexamethyldisilazane is preferable.
• an underlayer film is formed on the substrate.
• the surface of the substrate is made hydrophobic.
• the underlayer film may be an inorganic underlayer film or an organic underlayer film.
• the inorganic underlayer film can be formed by applying an inorganic material on the substrate and performing baking or the like.
• inorganic materials include silicon-based materials.
• An organic underlayer film can be formed by coating an organic material on a substrate to form a coating film and drying it.
• the organic materials are not limited to those sensitive to light or electron beams, and for example, resist materials and resin materials commonly used in the fields of semiconductors and liquid crystals can be used.
• the organic material is preferably a material capable of forming an organic underlayer film that can be etched, particularly dry-etched.
• a pattern formed by processing a resist film is used to etch an organic underlying film, thereby transferring the pattern to the underlying film to form a pattern of the underlying film.
• the organic material a material capable of forming an organic underlayer film that can be etched by oxygen plasma etching or the like is preferable. Examples of the organic material used for forming the organic underlayer film include AL412 manufactured by Brewer Science.
• the application of the organic material described above can be performed by a conventionally known method using spin coating, a spinner, or the like.
• a method for drying the coating film any method may be used as long as the solvent contained in the organic material can be volatilized, and examples thereof include a method of baking.
• the baking conditions are not particularly limited, but the baking temperature is preferably 80° C. or higher and 300° C. or lower, and more preferably 200° C. or higher and 300° C. or lower.
• the baking time is preferably 30 seconds or longer, more preferably 60 seconds or longer, preferably 500 seconds or shorter, more preferably 400 seconds or shorter, and 300 seconds or shorter. More preferably, it is particularly preferably 180 seconds or less.
• the thickness of the underlayer film after drying the coating film is not particularly limited, it is preferably 10 nm or more and 100 nm or less.
• resist film forming step a positive resist composition is applied onto a workpiece such as a substrate to be processed using a resist pattern (on the underlying film when the underlying film is formed). The positive resist composition is dried to form a resist film.
• the method for applying and drying the positive resist composition is not particularly limited, and methods generally used for forming a resist film can be used. Among them, heating (pre-baking) is preferable as the drying method.
• the prebake temperature is preferably 100° C. or higher, more preferably 120° C. or higher, and even more preferably 140° C. or higher, from the viewpoint of improving the film density of the resist film.
• the prebaking temperature is preferably 250° C. or lower, and 220° C. or lower. It is more preferable that the temperature is 200° C. or lower.
• the prebaking time is preferably 10 seconds or longer, more preferably 20 seconds or longer, and further preferably 30 seconds or longer. preferable. From the viewpoint of further reducing changes in the molecular weights and molecular weight distributions of copolymer A and copolymer B in the resist film before and after prebaking, the prebaking time is preferably 10 minutes or less, and 5 minutes or less. is more preferably 3 minutes or less.
• the resist film formed in the resist film formation step is irradiated with ionizing radiation such as an electron beam and EUV to draw a desired pattern.
• ionizing radiation such as an electron beam and EUV
• a known drawing device such as an electron beam drawing device or an EUV exposure device can be used.
• Post-exposure baking process An optional post-exposure bake step heats the resist film exposed in the exposure step. By performing the post-exposure baking process, the surface roughness of the resist pattern can be reduced.
• the heating temperature is preferably 70° C. or higher, more preferably 80° C. or higher, even more preferably 90° C. or higher, preferably 200° C. or lower, and 170° C. or lower. is more preferably 150° C. or lower. If the heating temperature is within the above range, the surface roughness of the resist pattern can be satisfactorily reduced while enhancing the clarity of the resist pattern.
• the time (heating time) for heating the resist film in the post-exposure baking step is preferably 10 seconds or longer, more preferably 20 seconds or longer, and even more preferably 30 seconds or longer. If the heating time is 10 seconds or more, the surface roughness of the resist pattern can be sufficiently reduced while further enhancing the clarity of the resist pattern. On the other hand, from the viewpoint of production efficiency, the heating time is, for example, preferably 10 minutes or less, more preferably 5 minutes or less, and even more preferably 3 minutes or less.
• the method of heating the resist film in the post-exposure baking step is not particularly limited, and examples thereof include a method of heating the resist film with a hot plate, a method of heating the resist film in an oven, and a method of blowing hot air onto the resist film. mentioned.
• the exposed resist film (the exposed and heated resist film when the post-exposure bake step is performed) is developed to form a developed film on the workpiece.
• the development of the resist film can be performed, for example, by bringing the resist film into contact with a developer.
• the method of bringing the resist film into contact with the developer is not particularly limited, and known techniques such as immersion of the resist film in the developer and application of the developer to the resist film can be used.
• the developer can be appropriately selected according to the properties of the copolymer A and copolymer B described above. Specifically, when selecting a developer, it is preferable to select a developer capable of dissolving the exposed portion of the resist film that has undergone the exposure process while not dissolving the resist film before the exposure process. Moreover, one type of developer may be used alone, or two or more types may be mixed and used at an arbitrary ratio.
• Examples of the developer include 1,1,1,2,3,4,4,5,5,5-decafluoropentane (CF 3 CFHCFHCF 2 CF 3 ), 1,1,1,2,2 ,3,3,4,4,5,5,6,6-tridecafluorohexane, 1,1,1,2,2,3,4,5,5,5-decafluoropentane, 1,1, Hydrofluorocarbons such as 1,3,3-pentafluorobutane, 1,1,1,2,2,3,3,4,4-nonafluorohexane, 2,2-dichloro-1,1,1-trifluoro Ethane, 1,1-dichloro-1-fluoroethane, 1,1-dichloro-2,2,3,3,3-pentafluoropropane (CF 3 CF 2 CHCl 2 ), 1,3-dichloro-1,1 , 2,2,3-pentafluoropropane (CClF 2 CF 2 CHClF) and other hydrochlorofluorocarbons, methyl non
• the temperature of the developer during development is not particularly limited, it can be, for example, 5°C or higher and 40°C or lower.
• the development time can be, for example, 10 seconds or more and 4 minutes or less.
• a step of removing the developer can be carried out after the developing step.
• the developer can be removed using, for example, a rinse.
• the rinsing liquid include, for example, hydrocarbon solvents such as octane and heptane, and water, in addition to the same developer as exemplified in the section of "developing step".
• the rinse liquid may contain a surfactant.
• the temperature of the rinsing liquid during rinsing is not particularly limited, but can be, for example, 5°C or higher and 40°C or lower. Also, the rinse time can be, for example, 5 seconds or more and 3 minutes or less.
• the above developer and rinse may each be filtered before use.
• the filtering method for example, the filtering method using the filter described in the above section "Preparation of positive resist composition" can be used.
• Etching process In an optional etching step, the underlying film and/or substrate is etched using the resist pattern described above as a mask to form a pattern in the underlying film and/or substrate. At that time, the number of times of etching is not particularly limited, and may be one time or a plurality of times. Etching may be either dry etching or wet etching, but dry etching is preferred. Dry etching can be performed using a known dry etching apparatus. The etching gas used for dry etching can be appropriately selected according to the underlying film to be etched, the elemental composition of the substrate, and the like.
• etching gas examples include fluorine-based gases such as CHF 3 , CF 4 , C 2 F 6 , C 3 F 8 and SF 6 ; chlorine-based gases such as Cl 2 and BCl 3 ; O 2 , O 3 and H 2 O and the like.
• oxygen - based gases H2 , NH3 , CO , CO2 , CH4 , C2H2 , C2H4 , C2H6 , C3H4 , C3H6 , C3H8 , HF , HI, HBr, HCl, NO, BCl3 , and other reducing gases; He, N2 , Ar, and other inert gases.
• gases may be used singly or in combination of two or more.
• An oxygen-based gas is usually used for dry etching of an inorganic underlayer film.
• a fluorine-based gas is usually used, and a mixture of a fluorine-based gas and an inert gas is preferably used.
• the underlayer film remaining on the substrate may be removed before or after etching the substrate.
• the underlying film may be a patterned underlying film or an unpatterned underlying film.
• the lower layer film may be removed by bringing a liquid such as a basic liquid or an acidic liquid, preferably a basic liquid, into contact with the lower layer film.
• the basic liquid is not particularly limited, and examples thereof include alkaline hydrogen peroxide water and the like.
• the method for removing the lower layer film by wet stripping using alkaline hydrogen peroxide solution is not particularly limited as long as it is a method that allows the lower layer film and alkaline hydrogen peroxide solution to come into contact with each other for a certain period of time under heating conditions.
• the substrate is washed with water and dried to obtain a substrate from which the underlayer film has been removed.
• An example of a resist pattern forming method is a resist pattern forming method using an electron beam or EUV, which includes the above-described underlayer film forming step, resist film forming step, exposure step, developing step, and rinsing step.
• An example of the etching method uses a resist pattern formed by a resist pattern forming method as a mask, and includes an etching step.
• an inorganic underlayer film is formed by applying an inorganic material onto a substrate and performing baking.
• the positive resist composition of the present invention is applied onto the inorganic underlayer film formed in the underlayer film forming step and dried to form a resist film.
• the resist film formed in the resist film forming step is irradiated with EUV to draw a desired pattern.
• the developing step the resist film exposed in the exposing step is brought into contact with a developing solution to develop the resist film, thereby forming a resist pattern on the underlying film.
• the resist film developed in the developing step is brought into contact with a rinsing liquid to rinse the developed resist film.
• the lower layer film is etched using the resist pattern as a mask to form a pattern in the lower layer film.
• the substrate is etched using the patterned underlayer film as a mask to form a pattern on the substrate.
• the resist film obtained by the method for forming a resist pattern of the present invention has excellent etching resistance, particularly excellent dry etching resistance.
• the resist film tends to be more excellent in dry etching resistance as the ratio of the carbon content per unit volume of the copolymer A and the copolymer B contained in the positive resist composition increases.
• a laminate obtained by the method of forming a resist pattern of the present invention includes a substrate and a resist film formed on the substrate. Prepared with an upper layer.
• the lower layer is composed of the copolymer A described above, and the upper layer is composed of the copolymer B described above.
• the resist film included in the laminate of the present invention can be formed by the method of forming a resist pattern of the present invention.
• the inside of the system was heated to 30° C. and the reaction was carried out for 80 hours.
• 10 g of tetrahydrofuran (THF) was added to the system, and the obtained solution was dropped into 100 g of methanol (MeOH) as a solvent to precipitate a polymer.
• the precipitated polymer was collected by filtration.
• the resulting polymer was a copolymer containing 50 mol % each of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl units and ⁇ -methylstyrene units. was a coalescence.
• the resulting polymer was a copolymer containing 50 mol % each of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl units and ⁇ -methylstyrene units. was a coalescence. After that, various measurements were performed in the same manner as in Preparation Example 1 for the obtained copolymer (copolymer A2 before purification). Table 1 shows the results.
• ⁇ Preparation Example 4 Preparation of copolymer A4>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl (ACAFPh) as the monomer (a) was placed in a glass ampoule containing a stirring bar; 1.066 g of ⁇ -methylstyrene as monomer (b) was added. Furthermore, in the same ampoule, 6.771 g of ion-exchanged water was added to 0.5463 g of the 18% solids aqueous solution of semi-cured tallow fatty acid potash soap prepared in Preparation Example 2 to obtain a monomer composition.
• ACAFPh ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl
• the ampoule was sealed, and pressurization and depressurization with nitrogen gas were repeated 10 times to remove oxygen in the system. Then, the inside of the system was heated to 75° C., and the polymerization reaction was carried out for 1 hour. Next, 10 g of tetrahydrofuran was added to the system, and the obtained solution was dropped into 100 g of a mixed solvent of THF and MeOH (THF:MeOH (mass ratio) 30:70) to precipitate a polymer. After that, the precipitated polymer was collected by filtration.
• the obtained polymer contains 54 mol % of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl units and 46 mol % of ⁇ -methylstyrene units. It was a copolymer. After that, various measurements were performed in the same manner as in Preparation Example 1 for the obtained copolymer (copolymer A4 before purification). Table 1 shows the results.
• ⁇ Preparation Example 6 Preparation of copolymer A6>> [Synthesis of polymer] ⁇ -chloroacrylate-1-(4-methoxyphenyl)-1-trifluoromethyl-2,2,2-trifluoroethyl ( ACAFPhOMe) and 2.487 g of ⁇ -methylstyrene as monomer (b) were added. Further, in the same ampoule, 6.771 g of ion-exchanged water was added to 0.5463 g of the 18% solids aqueous solution of the semi-cured tallow fatty acid potash soap prepared in Preparation Example 2 to obtain a monomer composition.
• the ampoule was sealed and oxygen was removed from the system by repeating pressurization and depressurization with nitrogen gas 10 times. Then, the inside of the system was heated to 75° C., and the polymerization reaction was carried out for 1 hour. Next, 10 g of tetrahydrofuran was added to the system, and the obtained solution was dropped into 100 g of methanol as a solvent to precipitate a polymer. After that, the precipitated polymer was collected by filtration. The resulting polymer contains 50 moles of ⁇ -chloroacrylate-1-(4-methoxyphenyl)-1-trifluoromethyl-2,2,2-trifluoroethyl units and ⁇ -methylstyrene units. % each.
• ⁇ Preparation Example 7 Preparation of Copolymer A7>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl (ACAFPh) as the monomer (a) was placed in a glass ampoule containing a stirring bar; 1.066 g of ⁇ -methylstyrene as monomer (b) was added. Further, in the same ampoule, 6.771 g of ion-exchanged water was added to 0.5463 g of the 18% solids aqueous solution of semi-hardened tallow fatty acid potash soap prepared in Preparation Example 2 to obtain a monomer composition.
• ACAFPh ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl
• the ampoule was sealed, and pressurization and depressurization with nitrogen gas were repeated 10 times to remove oxygen in the system. Then, the inside of the system was heated to 40° C., and the polymerization reaction was carried out for 11 hours. Next, 10 g of tetrahydrofuran was added to the system, and the obtained solution was dropped into 100 g of methanol as a solvent to precipitate a polymer. After that, the precipitated polymer was collected by filtration. The obtained polymer contains 54 mol % of ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl units and 46 mol % of ⁇ -methylstyrene units. It was a copolymer.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylic acid units and 50 mol % ⁇ -methylstyrene units.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylic acid units and 50 mol % ⁇ -methylstyrene units.
• ⁇ Preparation Example 10 Preparation of Copolymer B3>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylic acid 2,2,3,3,3-pentafluoropropyl (ACAPFP) as monomer (c) and 3.476 g of ⁇ -methylstyrene as monomer (d), and polymerization initiation
• a monomer composition containing 0.1103 g of azobisisobutyronitrile as an agent and 1.6205 g of cyclopentanone as a solvent was placed in a glass container, the glass container was sealed and replaced with nitrogen, and the mixture was placed in a nitrogen atmosphere. , and stirred in a constant temperature bath at 78° C. for 6 hours.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylic acid units and 50 mol % ⁇ -methylstyrene units.
• ⁇ Preparation Example 11 Preparation of Copolymer B4>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylic acid 2,2,3,3,3-pentafluoropropyl (ACAPFP) as monomer (c) and 3.476 g of ⁇ -methylstyrene as monomer (d), and polymerization initiation
• a monomer composition containing 0.0005 g of azobisisobutyronitrile as an agent and 1.6205 g of cyclopentanone as a solvent was placed in a glass container, the glass container was sealed and replaced with nitrogen, and a nitrogen atmosphere was added. , and stirred in a constant temperature bath at 78° C. for 2 hours.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylic acid units and 50 mol % ⁇ -methylstyrene units.
• ⁇ Preparation Example 12 Preparation of copolymer B5>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylic acid 2,2,3,3,3-pentafluoropropyl (ACAPFP) as monomer (c) and 3.476 g of ⁇ -methylstyrene as monomer (d), and polymerization initiation
• a monomer composition containing 0.0275 g of azobisisobutyronitrile as an agent and 1.6205 g of cyclopentanone as a solvent was placed in a glass container, the glass container was sealed and replaced with nitrogen, and a nitrogen atmosphere was added. , and stirred in a constant temperature bath at 78° C. for 6 hours.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylic acid units and 50 mol % ⁇ -methylstyrene units.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,3-pentafluoropropyl units of ⁇ -chloroacrylic acid and 50 mol % of 4-fluoro- ⁇ -methylstyrene units. .
• ⁇ Preparation Example 14 Preparation of copolymer B7>> [Synthesis of polymer] 3 g of ⁇ -chloroacrylate 2,2,2-trifluoroethyl (ACATFE) as monomer (c) and 4.399 g of ⁇ -methylstyrene as monomer (d), and azo as a polymerization initiator
• a monomer composition containing 0.0070 g of bisisobutyronitrile and 1.8514 g of cyclopentanone as a solvent was placed in a glass container, the glass container was sealed and replaced with nitrogen, and the temperature was increased to 78° C. under a nitrogen atmosphere. Stirred for 6 hours in a constant temperature bath.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,2-trifluoroethyl ⁇ -chloroacrylate units and 50 mol % ⁇ -methylstyrene units.
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and ⁇ -methylstyrene units. .
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and ⁇ -methylstyrene units. .
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and ⁇ -methylstyrene units. .
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and ⁇ -methylstyrene units. .
• the obtained polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and ⁇ -methylstyrene units. .
• the temperature was returned to room temperature, and after the inside of the glass container was exposed to the atmosphere, 10 g of THF was added to the obtained solution. Then, the solution containing THF was dropped into 100 g of MeOH as a solvent to precipitate a polymer. After that, the solution containing the precipitated polymer was filtered through a Kiriyama funnel to obtain a white coagulate (polymer).
• the resulting polymer was a copolymer containing 50 mol % each of 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylic acid units and 50 mol % of 4-fluoro- ⁇ -methylstyrene units. was a coalescence.
• Example 1 ⁇ Preparation of positive resist composition>
• a positive resist composition containing only the copolymer A the copolymer A1 prepared as described above was dissolved in isoamyl acetate as a solvent to prepare a positive resist composition (A) having a concentration of 3% by mass. prepared.
• a positive resist composition containing only copolymer B the copolymer B1 prepared as described above was dissolved in isoamyl acetate as a solvent to obtain a positive resist composition (B ) was prepared.
• the copolymer A1 prepared as described above and the copolymer B1 prepared as described above were A1 and copolymer B1 were dissolved in isoamyl acetate as a solvent in a mass ratio of 99:1 to prepare a positive resist composition (A/B mixed system) with a concentration of 3% by mass.
• the positive resist composition (A/B mixed system) obtained as described above was coated on a silicon wafer having a diameter of 4 inches so as to have a thickness of 50 nm. applied. Then, the applied positive resist composition (A/B mixed system) was heated on a hot plate at a temperature of 170° C. for 1 minute to form a resist film on the silicon wafer (resist film forming step).
• ELS-S50 electron beam drawing apparatus
• a plurality of patterns with different electron beam irradiation doses are drawn on the resist film (exposure step), and further exposed.
• the subsequent resist film was heated on a hot plate at 100° C. for 1 minute (post-exposure bake step).
• the heated resist film was subjected to development treatment using isopropyl alcohol as a developer at a temperature of 23° C. for 1 minute (development step). After that, the developer was removed by blowing nitrogen.
• the dose of the electron beam was varied by 4 ⁇ C/cm 2 within the range of 4 ⁇ C/cm 2 to 200 ⁇ C/cm 2 .
• the thickness of the resist film in the drawn portion was measured with an optical film thickness meter (Lambda Ace, manufactured by SCREEN Semiconductor Solutions Co., Ltd.).
• the sensitivity curve is fitted to a quadratic function in the range of ⁇ 0.80, and the point of the residual film rate of 0 and the residual film rate on the obtained quadratic function (function of the residual film rate and the common logarithm of the total irradiation dose) A straight line (approximation line of the slope of the sensitivity curve) connecting the 0.50 points was created. Further, the total dose E th ( ⁇ C/cm 2 ) of the electron beam when the residual film ratio of the obtained straight line (a function of the residual film ratio and the common logarithm of the total irradiation dose) was 0 was determined.
• E 0 is the quadratic function obtained by fitting the sensitivity curve to a quadratic function in the range of the residual film rate of 0.20 to 0.80 (commonly used for the residual film rate and total irradiation dose is the logarithm of the total dose obtained when the remaining film rate of 0 is substituted for the function of the logarithm.
• E1 creates a straight line (approximation line of the slope of the sensitivity curve) connecting the point of the residual film rate of 0 and the point of the residual film rate of 0.50 on the obtained quadratic function, and the obtained straight line It is the logarithm of the total irradiation dose obtained when the residual film ratio of 1.00 is substituted for (the function of the residual film ratio and the common logarithm of the total irradiation dose).
• the following formula represents the slope of the straight line between the residual film ratios of 0 and 1.00. It should be noted that the greater the ⁇ value, the greater the slope of the sensitivity curve, indicating that a clear pattern can be well formed.
• ⁇ Eth> A resist film was formed on a silicon wafer in the same manner as the " ⁇ value" evaluation method.
• the initial thickness T0 of the obtained resist film was measured with an optical film thickness meter (Lambda Ace, manufactured by SCREEN Semiconductor Solution Co., Ltd.).
• the total dose Eth ( ⁇ C/cm 2 ) of the electron beam when the residual film ratio of the straight line (approximate line of the slope of the sensitivity curve) obtained when calculating the ⁇ value was 0 was determined. Table 4 shows the results. The smaller the Eth value, the higher the sensitivity of the resist film and the higher the resist pattern formation efficiency.
• ELS-S50 electron beam lithography system
• E op optimum exposure dose
• Electron beam drawing was performed to obtain an electron beam drawn wafer.
• the optimum exposure amount was appropriately set with a value approximately twice the Eth as a guideline.
• Development processing was performed by immersing the electron beam drawn wafer in isopropyl alcohol (IPA) as a developer for resist at 23° C. for 1 minute. After that, the developer was removed by nitrogen blowing to form a line-and-space pattern (half pitch: 25 nm).
• IPA isopropyl alcohol
• the pattern portion was cleaved and observed at a magnification of 100,000 times with a scanning electron microscope (manufactured by JEOL Ltd., JMS-7800F PRIME), and the maximum height (T max ) of the resist pattern after development and the resist film was measured .
• the "remaining film rate (half pitch (hp): 25 nm)" was obtained from the following formula and evaluated based on the following criteria. Table 4 shows the results. The higher the residual film ratio (half pitch (hp): 25 nm), the smaller the reduction of the resist pattern top.
• Remaining film rate (%) (T max /T 0 ) x 100 A More than 98.5% B More than 96% and 98.5% or less C 96% or less
• ⁇ Residue> The resist pattern formed during the evaluation of the above-mentioned ⁇ remaining film rate> was observed at a magnification of 100,000 using a scanning electron microscope (SEM), and according to the following criteria, residue on the resist pattern was evaluated to what extent remained. Table 4 shows the results. Residue remaining in the resist pattern can be confirmed in the SEM image as "dots" or the like that are brighter than the line pattern area where no residue is adhered. A smaller residue in the resist pattern means a higher contrast of the resist pattern. A: No residue is observed in the hp25 nm resist pattern. B: There is a very small amount of residue in the hp25 nm resist pattern, but it is within the allowable range. C: Many residues were observed in the resist pattern of hp 25 nm, which is out of the allowable range.
• ⁇ Dry etching resistance> Using a spin coater (manufactured by Mikasa, MS-A150), the positive resist composition (A/B mixed system) obtained as described above was coated on a silicon wafer having a diameter of 4 inches so as to have a thickness of 500 nm. applied. Then, the applied positive resist composition was heated on a hot plate at a temperature of 170° C. for 1 minute to form a resist film on the silicon wafer. Next, using a plasma etching apparatus (manufactured by Shinko Seiki Co., Ltd., EXAM), the resist film was etched (gas type: CF 4 , flow rate: 100 sccm, pressure: 10 Pa, power consumption: 200 W).
• the surface free energy of the film (film) produced using the positive resist composition (A) is defined as "the surface free energy of the copolymer A", and the film produced using the positive resist composition (B).
• the surface free energy of the film (film) produced using the positive resist composition (A/B mixed system) was defined as "the surface free energy of the mixed system of copolymer A and copolymer B". . Results are shown in Tables 1, 2 and 4.
• Examples 2 to 64 A positive resist was prepared in the same manner as in Example 1 except that the types of copolymer A and copolymer B and the mass ratio of copolymer A and copolymer B were changed as shown in Tables 4 to 9. A composition was prepared. Various measurements and evaluations were carried out in the same manner as in Example 1 using the obtained positive resist composition. The results are shown in Tables 4-9.
• Example 65-67 A resist was prepared in the same manner as in Example 1, except that the type of copolymer A and the mass ratio of copolymer A and copolymer B were changed as shown in Table 9, and the post-exposure baking step was not performed. A film was formed. Various measurements and evaluations were performed in the same manner as in Example 1 using the obtained resist film. Table 9 shows the results.
• Example 68-84 The types of copolymer A and copolymer B and the mass ratio of copolymer A and copolymer B were changed as shown in Table 10, and ethanol (EtOH) was used as the developer instead of isopropyl alcohol.
• a positive resist composition was prepared in the same manner as in Example 1, except that Various measurements and evaluations were carried out in the same manner as in Example 1 using the obtained positive resist composition. Table 10 shows the results.
• Examples 85-93 Positive type in the same manner as in Example 1 except that the types of copolymer A and copolymer B, the mass ratio of copolymer A and copolymer B, and the developer were changed as shown in Table 11.
• a resist composition was prepared.
• Various measurements and evaluations were carried out in the same manner as in Example 1 using the obtained positive resist composition.
• Table 11 shows the results.
• a positive resist composition was prepared in the same manner as in Example 1 except that the types of copolymer A and copolymer B and the mass ratio of copolymer A and copolymer B were changed as shown in Table 12. was prepared. Various measurements and evaluations were carried out in the same manner as in Example 1 using the obtained positive resist composition. Table 12 shows the results.
• Example 19-24 A positive resist composition was prepared in the same manner as in Example 1, except that the copolymer A was not used and the developer was changed as shown in Table 13. Various measurements and evaluations were carried out in the same manner as in Example 1 using the obtained positive resist composition. The results are shown in Table 13.
• ACAFPh denotes ⁇ -chloroacrylate-1-phenyl-1-trifluoromethyl-2,2,2-trifluoroethyl
• ACAFPhOMe denotes ⁇ -chloroacrylate-1-(4-methoxyphenyl)-1-trifluoromethyl-2,2,2-trifluoroethyl
• KRR (18%) soap refers to an aqueous solution of semi-hardened tallow fatty acid potash soap with a solids content of 18%
• ACAPFP denotes 2,2,3,3,3-pentafluoropropyl ⁇ -chloroacrylate
• ACAHFB denotes 2,2,3,3,4,4,4-heptafluorobutyl ⁇ -chloroacrylate
• ACATFE denotes 2,2,2-trifluoroethyl ⁇ -chloroacrylate
• IPA indicates isopropyl alcohol
• EtOH indicates ethanol
• PrOH indicates ethanol
• the present invention it is possible to provide a positive resist composition capable of forming a high-contrast resist pattern with little decrease in resist pattern top. Further, according to the present invention, it is possible to provide a method of forming a resist pattern that can form a high-contrast resist pattern with less decrease in the top of the resist pattern.

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