WO2022176448A1 - 熱硬化性樹脂組成物、パワーモジュール用基板およびパワーモジュール - Google Patents

熱硬化性樹脂組成物、パワーモジュール用基板およびパワーモジュール Download PDF

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WO2022176448A1
WO2022176448A1 PCT/JP2022/000854 JP2022000854W WO2022176448A1 WO 2022176448 A1 WO2022176448 A1 WO 2022176448A1 JP 2022000854 W JP2022000854 W JP 2022000854W WO 2022176448 A1 WO2022176448 A1 WO 2022176448A1
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resin composition
thermosetting resin
layer
metal
dimensional change
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PCT/JP2022/000854
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English (en)
French (fr)
Japanese (ja)
Inventor
和哉 北川
美香 賀川
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住友ベークライト株式会社
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Priority to JP2022529603A priority Critical patent/JPWO2022176448A1/ja
Publication of WO2022176448A1 publication Critical patent/WO2022176448A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/38—Boron-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • C08L101/12—Compositions of unspecified macromolecular compounds characterised by physical features, e.g. anisotropy, viscosity or electrical conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a thermosetting resin composition, a power module substrate, and a power module.
  • a semiconductor element is mounted on a support such as a lead frame, and a metal foil layer bonded to the lead frame through a bonding layer so as to be electrically and thermally conductive, and a heat sink to a heat sink.
  • a power module is disclosed in which a metal plate that mediates conduction is joined with an insulating resin layer.
  • the present inventor studied the process environment for mounting electronic components on a power module substrate, and focused on the reflow process in which high-temperature heat treatment is performed.
  • this reflow process for example, when melting a solder material, the power module substrate is placed in a high temperature environment of about 300.degree.
  • the metal substrate constituting the power module substrate has a large heat capacity, it is necessary to secure a sufficient heating time.
  • the linear expansion of the insulating resin layer and the metal layer is not only at room temperature but also at a high temperature of 300 ° C. By reducing the difference in , it is possible to suppress the occurrence of cracks due to thermal stress at the interface between the insulating resin layer and the metal layer as described above.
  • the present inventors found that by using the dimensional change rate with respect to a predetermined reference temperature as an index, it is possible to stably evaluate the linear expansion of each of the resin material and the metal material at room temperature or at a high temperature of 300°C. Found it. Furthermore, as a result of intensive studies based on such knowledge, the difference in dimensional change rate at room temperature of 25°C between the insulating resin layer and the metal layer is set to a predetermined value or less, and the difference in dimensional change rate at 300°C is set to a predetermined value. The inventors have found that cracks due to thermal stress can be suppressed at the interface between the insulating resin layer and the metal layer by doing the following, and have completed the present invention.
  • thermomechanical analysis TMA
  • TMA thermomechanical analysis
  • a metal substrate an insulating resin layer provided on the metal substrate; a metal circuit layer formed by circuit-processing the metal layer provided on the insulating resin layer, A power module substrate is provided, wherein the insulating resin layer is a cured product of the thermosetting resin composition.
  • a power module is provided comprising:
  • thermosetting resin composition capable of suppressing the occurrence of cracks, a power module substrate and a power module using the same.
  • FIG. 1 is a cross-sectional view of a power module substrate according to an embodiment of the present invention
  • FIG. It is a sectional view of a power module concerning one embodiment of the present invention.
  • thermosetting resin composition of this embodiment will be outlined.
  • the thermosetting resin composition of the present embodiment is an insulating material constituting a power module substrate comprising a metal substrate, an insulating resin layer provided on the metal substrate, and a metal layer provided on the insulating resin layer. It can be used to form a resin layer.
  • This insulating resin layer can be composed of a cured product of the thermosetting resin composition of the present embodiment.
  • FIG. 1 is a cross-sectional view of a power module substrate 100 according to one embodiment of the present invention.
  • the power module substrate 100 of this embodiment can include a metal substrate 101 , an insulating resin layer 102 provided on the metal substrate 101 , and a metal layer 103 provided on the insulating resin layer 102 .
  • This insulating resin layer 102 can adhere the metal layer 103 and the metal substrate 101 to each other.
  • the insulating resin layer 102 promotes heat conduction from the heat generator to the radiator. As a result, failure of electronic components such as semiconductor chips due to thermal history can be suppressed, and improvement in driving stability of the power module can be realized.
  • the dimensional change rate of the insulating resin layer 102 which is a cured product of the thermosetting resin composition measured by thermomechanical analysis (TMA), at room temperature of 25°C with respect to 20°C is defined as ⁇ L A25 .
  • ⁇ L A300 be the dimensional change rate at 300° C.
  • ⁇ L B25 be the dimensional change rate at room temperature 25° C. relative to 20° C. of the metal layer 103 measured by thermomechanical analysis (TMA)
  • ⁇ L B25 be the dimensional change rate at 300° C. relative to 20° C. ⁇ L B300 .
  • the thermosetting resin composition of the present embodiment satisfies
  • thermosetting resin composition of the present embodiment can suppress the occurrence of cracks due to thermal stress at the interface between the insulating resin layer 102 and the metal layer 103 by having the above configuration. Therefore, it is possible to realize the power module substrate 100 and the power module that have excellent insulation reliability even after the reflow process.
  • thermosetting resin composition of this embodiment The components of the thermosetting resin composition of this embodiment will be described in detail.
  • thermosetting resin composition of this embodiment can contain a thermosetting resin (A).
  • thermosetting resin (A) includes a cresol novolac type epoxy resin, an epoxy resin having a dicyclopentadiene skeleton, an epoxy resin having a biphenyl skeleton, an epoxy resin having an adamantane skeleton, an epoxy resin having a phenol aralkyl skeleton, and a biphenylaralkyl skeleton. , an epoxy resin having a naphthalene aralkyl skeleton, a cyanate resin, and the like.
  • the thermosetting resin (A) one of these may be used alone, or two or more of them may be used in combination. Among them, an epoxy resin having a dicyclopentadiene skeleton can be used from the viewpoint of further reducing the dielectric loss factor.
  • the content of the thermosetting resin (A) is, for example, preferably 1% by mass or more and 30% by mass or less, more preferably 5% by mass or more and 28% by mass or less, relative to the total solid content of the thermosetting resin composition. .
  • the content of the thermosetting resin (A) is at least the above lower limit value, the handling property is improved and the insulating resin layer 102 is easily formed.
  • the content of the thermosetting resin (A) is equal to or less than the above upper limit, the strength and flame retardancy of the insulating resin layer 102 are further improved, and the thermal conductivity of the insulating resin layer 102 is further improved. do.
  • the "solid content of the thermosetting resin composition” refers to the non-volatile content in the thermosetting resin composition, and refers to the remainder after excluding volatile components such as water and solvent.
  • the content relative to the entire thermosetting resin composition refers to the content relative to the entire solid content of the thermosetting resin composition excluding the solvent when the solvent is included.
  • thermosetting resin composition of this embodiment can contain an inorganic filler (B).
  • inorganic fillers (B) include silica, alumina, boron nitride, aluminum nitride, silicon nitride, and silicon carbide. These may be used individually by 1 type, or may use 2 or more types together.
  • the inorganic filler (B) may contain boron nitride. It can contain mixtures.
  • the agglomerated particles may be sintered particles or non-sintered particles.
  • Boron nitride may include one produced by the following method. First, boron carbide is nitrided in a nitrogen atmosphere, for example, at 1200 to 2500° C. for 2 to 24 hours. Then, it can be formed by adding diboron trioxide to the obtained boron nitride and firing it in a non-oxidizing atmosphere. The firing temperature is, for example, 1200-2500.degree. The baking time is, for example, 2 to 24 hours.
  • the average particle diameter of the aggregated particles of scale-like boron nitride is, for example, preferably 5 ⁇ m or more and 180 ⁇ m or less, more preferably 10 ⁇ m or more and 100 ⁇ m or less. This makes it possible to realize the insulating resin layer 102 with a better balance between thermal conductivity and insulation.
  • the average length of the monodisperse particles of scale-like boron nitride is, for example, 0.1 ⁇ m or more and 20 ⁇ m or less, preferably 0.1 ⁇ m or more and 10 ⁇ m or less.
  • longer_axis can be measured by an electron micrograph. For example, it is measured according to the following procedure. First, aggregated particles are cut with a microtome or the like to prepare a sample. Next, several cross-sectional photographs of the aggregated particles magnified several thousand times are taken with a scanning electron microscope.
  • arbitrary agglomerated particles are selected, and the long diameter of the monodisperse particles of scale-like boron nitride is measured from the photograph.
  • the major diameters of 10 or more monodisperse particles are measured, and the average value thereof is taken as the average major diameter.
  • the content of the inorganic filler (B) is preferably, for example, 50% by mass or more and 95% by mass or less, and 55% by mass or more and 88% by mass or less with respect to the total solid content of the thermosetting resin composition. more preferably 60% by mass or more and 80% by mass or less.
  • the content of the inorganic filler (B) is preferably, for example, 50% by mass or more and 95% by mass or less, and 55% by mass or more and 88% by mass or less with respect to the total solid content of the thermosetting resin composition. more preferably 60% by mass or more and 80% by mass or less.
  • thermosetting resin composition of the present embodiment can further contain a curing agent (C) when an epoxy resin is used as the thermosetting resin (A).
  • a curing agent (C) one or more selected from curing catalysts (C-1) and phenolic curing agents (C-2) can be used.
  • the curing catalyst (C-1) include organic metal salts such as zinc naphthenate, cobalt naphthenate, tin octylate, cobalt octylate, bisacetylacetonate cobalt (II), and trisacetylacetonate cobalt (III).
  • tertiary amines such as triethylamine, tributylamine, 1,4-diazabicyclo[2.2.2]octane; 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2,4-diethylimidazole , 2-phenyl-4-methyl-5-hydroxyimidazole, 2-phenyl-4,5-dihydroxymethylimidazole; triphenylphosphine, tri-p-tolylphosphine, tetraphenylphosphonium/tetraphenylborate, tri Organic phosphorus compounds such as phenylphosphine, triphenylborane, 1,2-bis-(diphenylphosphino)ethane; phenol compounds such as phenol, bisphenol A and nonylphenol; acetic acid, benzoic acid, salicylic acid, p-toluenesulfonic acid organic acids; etc., or mixtures thereof.
  • the curing catalyst (C-1) one type including derivatives among these may be used alone, or two or more types including these derivatives may be used in combination.
  • the content of the curing catalyst (C-1) is not particularly limited, but may be, for example, 0.001% by mass or more and 1% by mass or less with respect to the total solid content of the thermosetting resin composition.
  • Phenol-based curing agents (C-2) include novolak-type phenolic resins such as phenol novolak resin, cresol novolak resin, naphthol novolak resin, aminotriazine novolak resin, novolak resin, and trisphenylmethane-type phenol novolak resin; modified phenol resins such as modified phenol resins and dicyclopentadiene modified phenol resins; phenol aralkyl resins having a phenylene skeleton and/or biphenylene skeleton; Bisphenol compounds such as bisphenol F; resol-type phenolic resins, etc., may be mentioned, and these may be used singly or in combination of two or more.
  • novolak-type phenolic resins such as phenol novolak resin, cresol novolak resin, naphthol novolak resin, aminotriazine novolak resin, novolak resin, and trisphenylmethane-type phenol novolak resin
  • a novolac type phenol resin or a resol type phenol resin can be used as the phenolic curing agent (C-2) from the viewpoint of improving the glass transition temperature and reducing the coefficient of linear expansion.
  • the content of the phenol-based curing agent (C-2) is not particularly limited, but is preferably 0.5% by mass or more and 20% by mass or less with respect to the total solid content of the thermosetting resin composition.
  • thermosetting resin composition of this embodiment can contain a coupling agent (D).
  • the coupling agent (D) can improve the wettability of the interface between the thermosetting resin (A) and the inorganic filler (B).
  • the coupling agent (D) any commonly used one can be used. Specific examples include epoxysilane coupling agents, cationic silane coupling agents, aminosilane coupling agents, titanate coupling agents and silicone oil type coupling agents. It is preferable to use one or more coupling agents selected from among coupling agents.
  • the amount of the coupling agent (D) added depends on the specific surface area of the inorganic filler (B) and is not particularly limited. 10 parts by mass or less is preferable, and 0.5 to 7 parts by mass is particularly preferable.
  • the thermosetting resin composition of this embodiment can contain a phenoxy resin (E).
  • a phenoxy resin (E) By including the phenoxy resin (E), the bending resistance of the power module substrate 100 can be further improved.
  • the phenoxy resin (E) it is possible to reduce the elastic modulus of the insulating resin layer 102 and improve the stress relaxation force of the power module substrate 100 .
  • the phenoxy resin (E) when the phenoxy resin (E) is contained, the fluidity is reduced due to an increase in viscosity, and the occurrence of voids and the like can be suppressed.
  • the adhesion between the insulating resin layer 102 and the metal substrate 101 or the metal layer 103 can be improved.
  • Examples of the phenoxy resin (E) include a phenoxy resin having a bisphenol skeleton, a phenoxy resin having a naphthalene skeleton, a phenoxy resin having an anthracene skeleton, and a phenoxy resin having a biphenyl skeleton.
  • a phenoxy resin having a structure having a plurality of these skeletons can also be used.
  • the content of the phenoxy resin (E) may be, for example, 3% by mass or more and 10% by mass or less with respect to the total solid content of the thermosetting resin composition.
  • thermosetting resin composition of the present embodiment can contain other components such as antioxidants, leveling agents, nanoparticles, etc., in addition to the components described above, within a range that does not impair the effects of the present invention.
  • thermosetting resin composition of the present embodiment may be varnish-like or film-like.
  • each component described above can be added to a solvent to obtain a varnish-like thermosetting resin composition.
  • the inorganic filler (B) is added to the resin varnish and kneaded using a triple roll or the like to obtain a varnish.
  • a thermosetting resin composition having a shape can be obtained.
  • the inorganic filler (B) can be more uniformly dispersed in the thermosetting resin (A).
  • the solvent include, but are not limited to, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether, cyclohexanone, and the like.
  • thermosetting resin composition can be formed into a sheet shape by applying and drying it on the base material.
  • a sheet-like thermosetting resin composition can be obtained by applying a varnish-like thermosetting resin composition onto a base material, followed by heat-treating and drying it.
  • the base material include a metal substrate 101, a metal layer 103, and a metal foil that constitutes a peelable carrier material.
  • the heat treatment for drying the thermosetting resin composition is performed, for example, at 80 to 150° C. for 5 minutes to 1 hour.
  • the insulating resin layer 102 can be formed by curing the thermosetting resin composition by applying pressure and heat using a press or the like.
  • thermosetting resin composition may be aged.
  • changes in dielectric loss factor and dielectric constant at a frequency of 1 kHz and 100° C. to 175° C. can be reduced for the obtained insulating resin layer 102 .
  • This is presumed to be due to factors such as an increase in the affinity of the inorganic filler (B) for the thermosetting resin (A) due to aging.
  • Aging can be performed, for example, under conditions of 30 to 80° C. for 12 to 24 hours.
  • thermosetting resin composition of this embodiment The characteristics of the thermosetting resin composition of this embodiment will be described.
  • thermosetting resin composition of this embodiment can be used to form the insulating resin layer 102 that constitutes the power module substrate 100 .
  • the insulating resin layer 102 can be composed of a cured product of the above thermosetting resin composition.
  • the insulating resin layer 102 is provided between the metal substrate 101 and the metal layer 103 in the power module substrate 100 as shown in FIG.
  • each of the insulating resin layer 102, the metal layer 103, and the metal substrate 101, which are cured products of the thermosetting resin composition is measured by TMA (thermo-mechanical analysis) at a temperature range of 20° C. to 300° C.
  • the dimensional change rate is measured under the conditions of a temperature increase rate of 10° C./min and a tensile measurement mode.
  • the dimensional change rate of the insulating resin layer 102 at a room temperature of 25° C. relative to 20° C. is ⁇ L A25
  • the dimensional change rate of the metal layer 103 at a room temperature of 25° C. relative to 20° C. is ⁇ L A25. is ⁇ L B25
  • the dimensional change rate at 300° C. to 20° C. is ⁇ L B300
  • the dimensional change rate of the metal substrate 101 at room temperature 25° C. to 20° C. is ⁇ L C25
  • the dimensional change rate at 300° C. to 20° C. is ⁇ L Let it be C300 .
  • the dimensional change rate a value obtained when a copper foil is used for the metal layer 103 and a copper plate is used for the metal substrate 101 may be adopted.
  • ⁇ L B230 ⁇ L A230 is, for example, 0.20% or less, preferably 0.18% or less, and more preferably 0.15% or less. As a result, the hot durability can be improved.
  • the dimensional change rate of the insulating resin layer 102 and the metal layer 103 is measured at a predetermined temperature with 20° C. as a reference in the range of 20° C. to 300° C. using thermomechanical analysis (TMA), the dimensions of the insulating resin layer 102
  • TMA thermomechanical analysis
  • the maximum value of the difference between the change rate and the dimensional change rate of the metal layer 13 is, for example, 0.40% or less, preferably 0.2% or less, and more preferably 0.1% or less. As a result, the hot durability can be improved.
  • ⁇ L C230 ⁇ L A230 is, for example, 0.20% or less, preferably 0.18% or less, more preferably 0.15% or less. As a result, the hot durability can be improved.
  • the dimensions of the insulating resin layer 102 are measured at a predetermined temperature with 20° C. as a reference in the range of 20° C. to 300° C. using thermomechanical analysis (TMA), the dimensions of the insulating resin layer 102 are
  • TMA thermomechanical analysis
  • the maximum value of the difference between the change rate and the dimensional change rate of the metal substrate 101 is, for example, 0.40% or less, preferably 0.2% or less, and more preferably 0.1% or less. As a result, the hot durability can be improved.
  • thermosetting resin composition for example, by appropriately selecting the type and amount of each component contained in the thermosetting resin composition, the method for preparing the thermosetting resin composition, and the like,
  • and dimensional change rate can be controlled. is.
  • the use of a highly rigid material such as a cyanate resin and the increase in the crosslink density of the resin are effective for the above
  • the lower limit of the glass transition temperature of the cured product of the thermosetting resin composition of the present embodiment is, for example, 175° C. or higher, preferably 200° C. or higher, and more preferably 210° C. or higher. Thereby, the heat resistance of the insulating resin layer 102 can be improved.
  • the upper limit of the glass transition temperature is not particularly limited, it may be 290° C. or lower, for example.
  • the glass transition temperature (Tg) is measured by DMA (dynamic viscoelasticity measurement) under the conditions of a heating rate of 5° C./min and a frequency of 1 Hz.
  • the lower limit of the volume resistivity at 175° C. of the cured product of the thermosetting resin composition of the present embodiment is preferably 1.0 ⁇ 10 8 ⁇ m or more, more preferably 1.0 ⁇ 10 It is 9 ⁇ m or more, and particularly preferably 1.0 ⁇ 10 10 ⁇ m or more. Thereby, the insulation reliability of the insulating resin layer 102 can be improved.
  • the upper limit of the volume resistivity at 175° C. is not particularly limited, it may be, for example, 1.0 ⁇ 10 13 ⁇ m or less.
  • the volume resistivity at 175° C. represents an index of the insulating properties of the insulating resin layer 102 at high temperatures. That is, the higher the volume resistivity at 175° C., the better the insulation at high temperatures.
  • the volume resistivity at 175° C. conforms to JIS K6911 and is measured at an applied voltage of 1000 V one minute after voltage application.
  • the power module substrate 100 of this embodiment will be described. As shown in FIG. 1, the power module substrate 100 of the embodiment includes a metal substrate 101, an insulating resin layer 102 provided on the metal substrate 101, and a metal layer 103 provided on the insulating resin layer 102. be prepared.
  • the thickness of the insulating resin layer 102 is appropriately set according to the purpose, from the viewpoint of improving the mechanical strength and heat resistance and more effectively transmitting the heat from the electronic component to the metal substrate 101.
  • the thickness of the insulating resin layer 102 is preferably 40 ⁇ m or more and 400 ⁇ m or less, and from the viewpoint of further improving the balance between the heat dissipation property and the insulation property of the power module substrate 100 as a whole, the thickness of the insulating resin layer 102 is set to 100 ⁇ m or more and 300 ⁇ m or less. is more preferable.
  • the thickness of the insulating resin layer 102 By setting the thickness of the insulating resin layer 102 to be equal to or less than the above upper limit, heat from the electronic component can be easily transferred to the metal substrate 101 .
  • the insulating resin layer 102 can sufficiently alleviate the occurrence of thermal stress due to the difference in coefficient of thermal expansion between the metal substrate 101 and the insulating resin layer 102 . . Furthermore, the insulation of the power module substrate 100 is improved.
  • the metal substrate 101 has a role of dissipating heat accumulated in the power module substrate 100 .
  • the metal substrate 101 is not particularly limited as long as it is a heat-dissipating metal substrate, and may be made of a metal such as copper, aluminum, iron, nickel, or the like. These may be used alone or in combination of two or more.
  • the metal substrate 101 is, for example, a copper substrate, a copper alloy substrate, an aluminum substrate, or an aluminum alloy substrate, preferably a copper substrate or an aluminum substrate, and more preferably a copper substrate.
  • the metal substrate 101 may be made of the same material as the metal layer 103, or may be made of a copper substrate.
  • the thickness of the metal substrate 101 can be appropriately set as long as the object of the present invention is not impaired.
  • the upper limit of the thickness of the metal substrate 101 is, for example, 20.0 mm or less, preferably 5.0 mm or less. By using the metal substrate 101 having a thickness equal to or less than this numerical value, the thickness of the power module substrate 100 as a whole can be reduced. In addition, it is possible to improve the workability of the power module substrate 100 in external shape processing, cutting processing, and the like.
  • the lower limit of the thickness of the metal substrate 101 is, for example, 0.1 mm or more, preferably 1.0 mm or more, and more preferably 2.0 mm or more. By using the metal substrate 101 having a value equal to or greater than this value, the heat radiation performance of the power module substrate 100 as a whole can be improved.
  • the metal layer 103 is provided on the insulating resin layer 102 and subjected to circuit processing.
  • the metal forming the metal layer 103 include one or more selected from copper, copper alloys, aluminum, aluminum alloys, nickel, iron, tin, and the like.
  • the metal forming the metal layer 103 is preferably copper or aluminum, and particularly preferably copper.
  • metal layer 103 may comprise a copper layer.
  • the lower limit of the thickness of the metal layer 103 is, for example, 0.01 mm or more, preferably 0.05 mm or more, and more preferably 0.10 mm or more. If it is more than such a numerical value, heat generation of the circuit pattern can be suppressed even in applications requiring a high current.
  • the upper limit of the thickness of the metal layer 103 is, for example, 2.0 mm or less, preferably 1.5 mm or less, and more preferably 1.0 mm or less. If it is less than such a numerical value, it is possible to improve the circuit workability and to reduce the thickness of the substrate as a whole.
  • a metal foil that is available in plate form or a metal foil that is available in roll form may be used.
  • the power module substrate 100 as described above can be manufactured, for example, as follows.
  • a varnish-like thermosetting resin composition is applied onto a carrier material, then heat-treated and dried to form a resin layer, thereby obtaining a carrier material with a resin layer.
  • the carrier material is, for example, a resin film such as polyethylene terephthalate (PET); a metal foil such as copper foil;
  • the thickness of the carrier material is, for example, 10-500 ⁇ m.
  • the carrier material with a resin layer is laminated on the metal substrate 101 so that the resin layer side surface of the carrier material with the resin layer is in contact with the surface of the metal substrate 101 . Thereafter, the resin layer is adhered in a B-stage state by applying pressure and heat using a press or the like.
  • the carrier material is removed from the resin layer in the B-stage state, and the metal layer 103 is formed on the surface (exposed surface) of the resin layer to obtain a laminate.
  • this carrier material can be used as the metal layer 103 as it is. That is, in this case, after the metal layer 103 with the resin layer is obtained, the metal layer 103 with the resin layer is laminated on the metal substrate 101 to obtain the intended laminate.
  • the resin layer is cured to form the insulating resin layer 102, and the power module substrate 100 is obtained.
  • the manufacturing method of laminating a carrier material with a resin layer on the metal substrate 101 was described. It can also be bonded to the substrate 101 .
  • the metal layer 103 may be a metal foil extruded from a roll, preferably a copper foil or aluminum foil extruded from a roll. can. By doing so, it is possible to improve production efficiency.
  • the obtained power module substrate 100 may be subjected to circuit processing by etching, cutting, or the like into a predetermined pattern on the metal layer 103 to form a circuit layer. That is, the power module substrate 100 of the present embodiment is formed by circuit-processing a metal substrate 101, an insulating resin layer 102 provided on the metal substrate 101, and a metal layer 103 provided on the insulating resin layer 102. and a metal circuit layer.
  • the insulating resin layer 102 is composed of a cured product of the thermosetting resin composition of this embodiment.
  • a solder resist 10 (see FIG. 2) may be formed as the outermost layer, and the connection electrodes may be exposed so that electronic components can be mounted by exposure and development.
  • FIG. 2 is a cross-sectional view of the power module 11 according to one embodiment of the invention.
  • the 11 of the present embodiment can include the power module substrate and an electronic component (IC chip 2) provided on the power module substrate.
  • IC chip 2 an electronic component
  • the power module 11 which is a semiconductor device, is, for example, a power semiconductor device, LED lighting, or an inverter device.
  • the inverter device is a device that electrically generates AC power from DC power (has a reverse conversion function).
  • power semiconductor devices are characterized by high voltage resistance, large current, high speed and high frequency compared to ordinary semiconductor elements, and are generally called power devices, such as rectifier diodes, power transistors , a power MOSFET, an insulated gate bipolar transistor (IGBT), a thyristor, a gate turn-off thyristor (GTO), a triac, and the like.
  • Electronic parts include semiconductor elements such as insulated gate bipolar transistors, diodes, and IC chips, and various heating elements such as resistors and capacitors.
  • the power module substrate 100 functions as a heat spreader.
  • the IC chip 2 is mounted via the adhesive layer 3 on the metal layer 103a of the power module substrate.
  • the IC chip 2 is electrically connected to the metal layer 103b through the bonding wire 7.
  • bonding wires 7 As shown in FIG. IC chip 2 , bonding wires 7 , and metal layers 103 a and 103 b are sealed with sealing material 6 .
  • the chip capacitor 8 and the chip resistor 9 are mounted on the metal layer 103 .
  • These chip capacitor 8 and chip resistor 9 can be conventionally known ones.
  • the metal substrate 101 of the power module 11 is connected to the heat dissipation fins 5 via the thermally conductive grease 4 . That is, the heat generated by the IC chip 2 can be conducted to the heat dissipation fins 5 through the adhesive layer 3, the metal layer 103a, the insulating resin layer 102, the metal substrate 101, and the thermally conductive grease 4, thereby removing the heat. can.
  • each thickness is represented by an average film thickness.
  • thermosetting resin for power module
  • a thermosetting resin for example, a thermosetting resin, a phenoxy resin, a curing agent, and a curing catalyst were added to methyl ethyl ketone and stirred to obtain a thermosetting resin composition solution.
  • an inorganic filler was added to this solution, premixed, and kneaded with a triple roll to obtain a varnish-like thermosetting resin composition in which the inorganic filler was uniformly dispersed.
  • the obtained thermosetting resin composition was aged at 60° C. for 15 hours.
  • thermosetting resin composition was applied onto a copper foil (thickness 0.07 mm, manufactured by Furukawa Electric Co., Ltd., GTS-MP foil) using a doctor blade method, and then heated at 100°C for 30 minutes.
  • a copper foil with an insulating resin layer was produced by drying by heat treatment.
  • the obtained copper foil with an insulating resin layer and a copper plate (tough pitch copper) having a thickness of 3.0 mm are laminated together, and pressed in a vacuum press at a press pressure of 100 kg/cm 2 at 180° C. for 40 minutes to form a copper foil.
  • metal layer an insulating resin layer, and a power module substrate (thickness of insulating resin layer: 200 ⁇ m) having a copper plate (metal plate).
  • Epoxy resin 1 cresol novolac type epoxy resin (N-690, manufactured by Dainippon Ink Co., Ltd.)
  • Epoxy resin 2 epoxy resin having a dicyclopentadiene skeleton (XD-1000, manufactured by Nippon Kayaku Co., Ltd.)
  • Epoxy resin 3 bisphenol F type epoxy resin (830S, manufactured by Dainippon Ink Co., Ltd.)
  • Cyanate resin 1 phenol novolac type cyanate resin (PT-30, manufactured by Lonza Japan) (phenoxy resin)
  • Phenoxy resin 1 Bisphenol A type phenoxy resin (YP-55, manufactured by Nippon Steel Chemical & Materials Co., Ltd.) (curing agent)
  • Phenolic curing agent 1 Trisphenylmethane type phenol novolak resin (MEH-7500, manufactured by Meiwa Kasei Co., Ltd.) (Curing catalyst)
  • Inorganic filler 1 Boron nitride produced by the following production example (production of boron nitride) A mixture obtained by mixing melamine borate and scaly boron nitride powder (average length: 15 ⁇ m) was added to an aqueous ammonium polyacrylate solution and mixed for 2 hours to prepare a slurry for spraying. Next, this slurry was supplied to a spray granulator and sprayed under conditions of an atomizer rotation speed of 15000 rpm, a temperature of 200° C. and a slurry supply rate of 5 ml/min to produce composite particles. Next, the obtained composite particles were formed by firing at 2000° C. in a nitrogen atmosphere.
  • the metal plate and metal layer were peeled off from the obtained power module substrate to obtain an insulating resin layer as a test sample.
  • the dimensional change rate of each of the obtained insulating resin layer, metal layer (copper foil) and metal plate (copper plate) was measured by TMA (thermo-mechanical analysis) at a temperature range of 20 ° C. to 300 ° C. at a heating rate of 10 ° C./ Measured under conditions of min and tensile measurement mode.
  • Tg glass transition temperature
  • volume resistivity of the obtained insulating resin layer was measured in accordance with JIS K6911 using an ULTRA HIGH RESISTANCE METER R8340A (manufactured by ADC Corporation) at an applied voltage of 1000 V one minute after application.
  • the main electrode was formed in a circular shape of ⁇ 25.4 mm using a conductive paste. Moreover, the guard electrode was not created at this time. Furthermore, a counter electrode of ⁇ 26 mm was formed on the surface opposite to the main electrode. Evaluation criteria are as follows. ⁇ : Volume resistance value of 1 ⁇ 10 9 ⁇ m or more ⁇ : Volume resistance value of 1 ⁇ 10 8 ⁇ m or more, less than 1 ⁇ 10 9 ⁇ m ⁇ : Volume resistance value of less than 1 ⁇ 10 8 ⁇ m
  • the power module substrates obtained in each example and comparative example were evaluated for insulation reliability based on the following procedure.
  • a power module shown in FIG. 2 was produced using a power module substrate.
  • An IGBT chip was used as the IC chip.
  • a wire made of Cu was used as the bonding wire.
  • the insulation resistance in continuous humidity was evaluated under the conditions of temperature of 85° C., humidity of 85%, and applied DC voltage of 1.5 kV.
  • a resistance value of 10 6 ⁇ or less was defined as failure. Evaluation criteria are as follows. ⁇ : No failure for 300 hours or more ⁇ : Failure for 100 hours or more and less than 300 hours ⁇ : Failure for less than 100 hours
  • thermosetting resin compositions of Examples 1 to 3 inhibited cracking when used in power module substrates, and showed excellent insulation reliability.
  • the thermosetting resin compositions of Examples 1 to 3 can be suitably used to form an insulating resin layer that constitutes a power module substrate.

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CN118222959A (zh) * 2024-04-11 2024-06-21 哈尔滨工业大学（威海） 超声辅助热固性塑料及其复合材料金属化方法及复合基板

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