WO2022158596A1 - Dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur Download PDF

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Publication number
WO2022158596A1
WO2022158596A1 PCT/JP2022/002470 JP2022002470W WO2022158596A1 WO 2022158596 A1 WO2022158596 A1 WO 2022158596A1 JP 2022002470 W JP2022002470 W JP 2022002470W WO 2022158596 A1 WO2022158596 A1 WO 2022158596A1
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WIPO (PCT)
Prior art keywords
breakdown voltage
terminal
junction temperature
diode
switching element
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PCT/JP2022/002470
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English (en)
Japanese (ja)
Inventor
達志 金田
透 日吉
洋 江草
弘貴 大森
Original Assignee
住友電気工業株式会社
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Priority to JP2022576773A priority Critical patent/JPWO2022158596A1/ja
Publication of WO2022158596A1 publication Critical patent/WO2022158596A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present disclosure relates to semiconductor devices.
  • a semiconductor device used in a power module As a semiconductor device used in a power module, a semiconductor device is proposed in which a switching element and a diode element are connected in parallel between two terminals, and the breakdown voltage of the diode element is made smaller than the breakdown voltage of the switching element. (Patent Documents 1 and 2). Also proposed is a semiconductor device in which the breakdown voltage of a switching element is lower than the breakdown voltage of a diode element (Patent Document 3).
  • a semiconductor device includes a first terminal, a second terminal, and a first diode connected between the first terminal and the second terminal and having a first breakdown voltage having junction temperature dependence. and a first switching element connected in parallel to the first diode element between the first terminal and the second terminal and having a second breakdown voltage having junction temperature dependence. and the second breakdown voltage within the junction temperature range of 50° C. or more and 70° C. or less is lower than the first breakdown voltage within the junction temperature range of 50° C. or more and 70° C. or less;
  • the down voltage includes a third breakdown voltage when the junction temperature is 50° C. and a fourth breakdown voltage when the junction temperature is 300° C., and is within the junction temperature range of 50° C. or higher and 70° C. or lower.
  • the first breakdown voltage is between the third breakdown voltage and the fourth breakdown voltage.
  • FIG. 1 is a perspective view showing a semiconductor device according to an embodiment.
  • FIG. 2 is a top view showing the semiconductor device according to the embodiment.
  • FIG. 3 is a cross-sectional view showing the relationship among the heat sink, first insulating substrate, and second insulating substrate in the semiconductor device according to the embodiment.
  • FIG. 4 is a cross-sectional view showing the first transistor.
  • FIG. 5 is a cross-sectional view showing the first diode.
  • FIG. 6 is a cross-sectional view showing the second transistor.
  • FIG. 7 is a cross-sectional view showing a second diode.
  • FIG. 8 is a circuit diagram showing the semiconductor device according to the embodiment.
  • FIG. 9 is a schematic diagram (part 1) showing the operation of the semiconductor device according to the embodiment; FIG.
  • FIG. 10 is a schematic diagram (part 2) showing the operation of the semiconductor device according to the embodiment
  • FIG. 11 is a schematic diagram (part 3) showing the operation of the semiconductor device according to the embodiment
  • FIG. 12 is a schematic diagram (part 4) showing the operation of the semiconductor device according to the embodiment
  • FIG. 13 is a diagram showing an example of characteristics of the first transistor, the second transistor, the first diode, and the second diode.
  • FIG. 14 is a timing chart showing changes in voltage and current in the lower arm when transitioning to the dynamic avalanche state.
  • FIG. 15 is a diagram showing another example of characteristics of the first transistor, the second transistor, the first diode, and the second diode.
  • a conventional semiconductor device may not have sufficient avalanche resistance.
  • An object of the present disclosure is to provide a semiconductor device capable of improving avalanche resistance.
  • the avalanche resistance can be improved.
  • a semiconductor device includes a first terminal, a second terminal, and a first breakdown connected between the first terminal and the second terminal and having junction temperature dependency.
  • a first diode element having a voltage and a second junction temperature dependent second breakdown voltage connected in parallel to the first diode element between the first terminal and the second terminal; 1 switching element, wherein the second breakdown voltage within a junction temperature range of 50° C. to 70° C. is higher than the first breakdown voltage within a junction temperature range of 50° C. to 70° C. and the second breakdown voltage includes a third breakdown voltage when the junction temperature is 50° C. and a fourth breakdown voltage when the junction temperature is 300° C., and is between 50° C. and 70° C. the first breakdown voltage within a junction temperature range of between the third breakdown voltage and the fourth breakdown voltage.
  • the first switching element when transitioning to a dynamic avalanche state, breaks down before the first diode element.
  • the inter-terminal voltage between the first terminal and the second terminal increases, and an avalanche current flows through the first switching element. Therefore, the junction temperature of the first switching element rises, and the second breakdown rises.
  • the terminal voltage rises, and the terminal voltage reaches the first breakdown voltage of the first diode element before the junction temperature of the first switching element reaches 300 ° C.
  • the first diode element also breaks down.
  • the second breakdown voltage has a fifth breakdown voltage when the junction temperature is 250°C, and the first breakdown is within the junction temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between said third breakdown voltage and said fifth breakdown voltage.
  • the inter-terminal voltage reaches the first breakdown voltage of the first diode element before the junction temperature of the first switching element reaches 250° C., and the first diode element breaks down.
  • the second breakdown voltage has a sixth breakdown voltage when the junction temperature is 175°C, and the first breakdown is within the junction temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between said third breakdown voltage and said sixth breakdown voltage.
  • the inter-terminal voltage reaches the first breakdown voltage of the first diode element before the junction temperature of the first switching element reaches 175° C., and the first diode element breaks down.
  • a semiconductor device includes a first terminal, a second terminal, and a first terminal connected between the first terminal and the second terminal and having environmental temperature dependency. a first diode element having a breakdown voltage; and a second breakdown voltage having environmental temperature dependence connected in parallel to the first diode element between the first terminal and the second terminal.
  • the second breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower is the first breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower. voltage
  • the second breakdown voltage includes a third breakdown voltage when the ambient temperature is 50° C. and a fourth breakdown voltage when the ambient temperature is 300° C., 50° C. or more 70 C. and below the ambient temperature range, the first breakdown voltage is between the third breakdown voltage and the fourth breakdown voltage.
  • the junction temperature of the first switching element becomes less likely to reach the breakdown temperature, and the avalanche resistance can be improved.
  • the second breakdown voltage has a fifth breakdown voltage when the environmental temperature is 250°C, and the first breakdown is within the environmental temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between said third breakdown voltage and said fifth breakdown voltage.
  • the terminal voltage reaches the first breakdown voltage of the first diode element before the environmental temperature of the first switching element reaches 250° C., and the first diode element breaks down.
  • the second breakdown voltage has a sixth breakdown voltage when the environmental temperature is 175°C, and the first breakdown is within the environmental temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between said third breakdown voltage and said sixth breakdown voltage.
  • the terminal voltage reaches the first breakdown voltage of the first diode element before the ambient temperature of the first switching element reaches 175° C., and the first diode element breaks down.
  • a semiconductor device includes a first terminal, a second terminal, and a first terminal connected between the first terminal and the second terminal and having junction temperature dependency. a first diode element having a breakdown voltage; and a second breakdown voltage having junction temperature dependence, connected in parallel to the first diode element between the first terminal and the second terminal. wherein the second breakdown voltage within a junction temperature range of 50° C. or more and 70° C. or less is the first breakdown voltage within a junction temperature range of 50° C. or more and 70° C. or less. When the voltage is lower than the voltage and transitions to a dynamic avalanche state, an avalanche current flows through the first switching element.
  • the junction temperature of the element rises, the voltage between the first terminal and the second terminal rises, the voltage between the terminals rises, and the first breakdown voltage of the first diode element rises. By reaching, an avalanche current flows through the first diode element before the first switching element breaks down.
  • a semiconductor device includes a first terminal, a second terminal, and a first terminal connected between the first terminal and the second terminal and having environmental temperature dependency. a first diode element having a breakdown voltage; and a second breakdown voltage having environmental temperature dependence connected in parallel to the first diode element between the first terminal and the second terminal. wherein the second breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower is the first breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower. When the voltage is lower than the voltage and transitions to a dynamic avalanche state, an avalanche current flows through the first switching element.
  • the avalanche resistance can be improved.
  • a plurality of sets of the first switching element and the first diode element may be connected in parallel between the first terminal and the second terminal. In this case, a larger current can flow.
  • the first switching element is a field effect transistor made of silicon carbide
  • the first diode element is a Schottky made of silicon carbide. It may be a barrier diode.
  • the first switching element is a field effect transistor made of silicon carbide
  • the first diode element is a Schottky made of silicon carbide. It may be a barrier diode.
  • the avalanche resistance can be improved, it is possible to suppress destruction of the first switching element even if it transitions to the avalanche state while realizing high withstand voltage and high-speed operation by the first switching element.
  • switching elements tend to have a lower breakdown voltage when the on-resistance is lowered, and it is not easy to obtain a high breakdown voltage while obtaining a low on-resistance.
  • this semiconductor device even if the breakdown voltage of the first switching element is not particularly high, a good avalanche resistance can be obtained, so a structure that provides a low on-resistance can be adopted for the first switching element.
  • a third terminal and a second diode connected between the third terminal and the second terminal and having a junction temperature dependent seventh breakdown voltage and a second switching element connected in parallel to the second diode element between the third terminal and the second terminal and having an eighth breakdown voltage having junction temperature dependence.
  • the eighth breakdown voltage within the junction temperature range of 50° C. or more and 70° C. or less is lower than the seventh breakdown voltage within the junction temperature range of 50° C. or more and 70° C. or less;
  • the down voltage includes a ninth breakdown voltage when the junction temperature is 50° C. and a tenth breakdown voltage when the junction temperature is 300° C., and is within the junction temperature range of 50° C. or higher and 70° C. or lower.
  • the seventh breakdown voltage may be between the ninth breakdown voltage and the tenth breakdown voltage. In this case, two arms connected in series can be configured between the first terminal and the third terminal.
  • the eighth breakdown voltage includes the eleventh breakdown voltage when the junction temperature is 250°C, and the seventh breakdown within the junction temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between the ninth breakdown voltage and the eleventh breakdown voltage.
  • the terminal voltage reaches the seventh breakdown voltage of the second diode element before the junction temperature of the second switching element reaches 250° C., and the second diode element breaks down.
  • the eighth breakdown voltage includes a twelfth breakdown voltage when the junction temperature is 175°C, and the seventh breakdown within the junction temperature range of 50°C or more and 70°C or less.
  • the voltage may be between the ninth breakdown voltage and the twelfth breakdown voltage.
  • the terminal voltage reaches the seventh breakdown voltage of the second diode element before the junction temperature of the second switching element reaches 175° C., and the second diode element breaks down.
  • a third terminal and a second diode connected between the third terminal and the second terminal and having a seventh breakdown voltage dependent on ambient temperature and a second switching element connected in parallel to the second diode element between the third terminal and the second terminal and having an eighth breakdown voltage dependent on ambient temperature.
  • the eighth breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower is lower than the seventh breakdown voltage within the environmental temperature range of 50° C. or higher and 70° C. or lower;
  • the down voltage includes a ninth breakdown voltage when the environmental temperature is 50° C. and a tenth breakdown voltage when the environmental temperature is 300° C., and is within an environmental temperature range of 50° C. or higher and 70° C. or lower.
  • the seventh breakdown voltage may be between the ninth breakdown voltage and the tenth breakdown voltage. In this case, two arms connected in series can be configured between the first terminal and the third terminal.
  • the eighth breakdown voltage includes an eleventh breakdown voltage when the environmental temperature is 250°C, and the seventh breakdown within the environmental temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between the ninth breakdown voltage and the eleventh breakdown voltage.
  • the terminal voltage reaches the seventh breakdown voltage of the second diode element before the environmental temperature of the second switching element reaches 250° C., and the second diode element breaks down.
  • the eighth breakdown voltage has a twelfth breakdown voltage when the environmental temperature is 175°C, and the seventh breakdown within the environmental temperature range of 50°C or higher and 70°C or lower.
  • the voltage may be between the ninth breakdown voltage and the twelfth breakdown voltage.
  • the terminal voltage reaches the seventh breakdown voltage of the second diode element before the environmental temperature of the second switching element reaches 175° C., and the second diode element breaks down.
  • a third terminal and a second diode connected between the third terminal and the second terminal and having a junction temperature dependent seventh breakdown voltage and a second switching element connected in parallel to the second diode element between the third terminal and the second terminal and having an eighth breakdown voltage having junction temperature dependence.
  • the eighth breakdown voltage within a junction temperature range of 50° C. to 70° C. is lower than the seventh breakdown voltage within a junction temperature range of 50° C. to 70° C. and dynamic avalanche
  • the voltage across the third terminal and the second terminal increases, the voltage across the terminals increases, and reaches the seventh breakdown voltage of the second diode element, thereby causing the second switching.
  • An avalanche current may flow through the second diode element before the element breaks down.
  • two arms connected in series can be configured between the first terminal and the third terminal.
  • a third terminal and a second diode connected between the third terminal and the second terminal and having a seventh breakdown voltage dependent on ambient temperature and a second switching element connected in parallel to the second diode element between the third terminal and the second terminal and having an eighth breakdown voltage dependent on ambient temperature. and the eighth breakdown voltage within an environmental temperature range of 50° C. to 70° C. is lower than the seventh breakdown voltage within an environmental temperature range of 50° C. to 70° C., and dynamic avalanche When transitioning to the state, an avalanche current flows through the second switching element, and the junction temperature of the second switching element rises due to the avalanche current flowing, and the junction temperature of the second switching element rises.
  • the voltage across the third terminal and the second terminal increases, the voltage across the terminals increases, and reaches the seventh breakdown voltage of the second diode element, thereby causing the second switching.
  • An avalanche current may flow through the second diode element before the element breaks down.
  • two arms connected in series can be configured between the first terminal and the third terminal.
  • a plurality of sets of the second switching element and the second diode element may be connected in parallel between the third terminal and the second terminal. In this case, a larger current can flow.
  • the second switching element is a field effect transistor made of silicon carbide
  • the second diode element is a Schottky made of silicon carbide. It may be a barrier diode.
  • the avalanche resistance can be improved, it is possible to suppress breakdown of the second switching element even when the second switching element transits to the avalanche state while realizing high withstand voltage and high-speed operation by the second switching element.
  • FIG. 1 is a perspective view showing a semiconductor device according to an embodiment.
  • FIG. 2 is a top view showing the semiconductor device according to the embodiment. However, in FIG. 2, the case is seen through.
  • FIG. 3 is a cross-sectional view showing the relationship among the heat sink, first insulating substrate, and second insulating substrate in the semiconductor device according to the embodiment.
  • FIG. 3 corresponds to a cross-sectional view taken along line III-III in FIG.
  • a semiconductor device 1 mainly has a heat sink 2 , a case 9 , a P terminal 3 , an N terminal 4 , a first O terminal 5 and a second O terminal 6 .
  • the first O-terminal 5 and the second O-terminal 6 may be collectively referred to as O-terminals.
  • the P terminal 3 is a positive power supply terminal
  • the N terminal 4 is a negative power supply terminal
  • the first O terminal 5 and the second O terminal 6 are output terminals.
  • P terminal 3 , N terminal 4 , first O terminal 5 and second O terminal 6 are assembled to case 9 .
  • the case 9 further includes a first gate terminal 131, a first sense source terminal 132, a sense drain terminal 133, a second gate terminal 231, a second sense source terminal 232, a first thermistor terminal 331, A second thermistor terminal 332 is assembled.
  • the P terminal 3 and the N terminal 4 are examples of a first terminal or a third terminal, and the first O terminal 5 and the second O terminal 6 are examples of a second terminal.
  • the X1-X2 direction, the Y1-Y2 direction, and the Z1-Z2 direction are mutually orthogonal directions.
  • a plane including the X1-X2 direction and the Y1-Y2 direction is the XY plane
  • a plane including the Y1-Y2 direction and the Z1-Z2 direction is the YZ plane
  • a plane including the Z1-Z2 direction and the X1-X2 direction is the ZX plane.
  • the Z1 direction is defined as the upward direction
  • the Z2 direction is defined as the downward direction.
  • planar viewing means viewing an object from the Z1 side.
  • the X1-X2 direction is the direction along the long sides of the rectangular heat sink 2 and the case 9 in plan view
  • the Y1-Y2 direction is the direction along the short sides of the heat sink 2 and the case 9
  • the Z1-Z2 direction is the direction along the normal line of the heat sink 2 and the case 9 .
  • the heat sink 2 is, for example, a plate-like body that is rectangular in plan view and has a uniform thickness.
  • the heat sink 2 has a first principal surface 2A and a second principal surface 2B opposite to the first principal surface 2A.
  • the material of the heat sink 2 is a metal having a high thermal conductivity, such as copper (Cu), a copper alloy, aluminum (Al), or the like.
  • the radiator plate 2 is fixed to a cooler or the like using a thermal interface material (TIM) or the like.
  • the case 9 is formed, for example, in a frame shape in plan view, and the outer shape of the case 9 is the same as the outer shape of the radiator plate 2 .
  • the material of the case 9 is an insulator such as resin.
  • the case 9 has a pair of side wall portions 91 and 92 facing each other and a pair of end wall portions 93 and 94 connecting both ends of the side wall portions 91 and 92 .
  • the side wall portions 91 and 92 are arranged parallel to the ZX plane, and the end wall portions 93 and 94 are arranged parallel to the YZ plane.
  • the side wall portion 92 is arranged on the Y2 side of the side wall portion 91
  • the end wall portion 94 is arranged on the X2 side of the end wall portion 93 .
  • the case 9 has a terminal block 95 projecting from the end wall portion 93 in the X1 direction, and a terminal block 96 projecting from the end wall portion 94 in the X2 direction.
  • the P terminal 3 and the N terminal 4 are arranged on the upper surface (Z1 side surface) of the terminal block 95, and the first O terminal 5 and the second O terminal 6 are arranged on the upper surface (Z1 side surface) of the terminal block 96.
  • the N terminal 4 is arranged on the Y2 side of the P terminal 3 and the second O terminal 6 is arranged on the Y2 side of the first O terminal 5 .
  • the P terminal 3, the N terminal 4, the first O terminal 5 and the second O terminal 6 are made of metal plates. One end of each of the P terminal 3 and the N terminal 4 is exposed on the X2 side of the end wall portion 93 , and the other end of each is pulled out to the upper surface of the terminal block 95 .
  • One end of each of the first O terminal 5 and the second O terminal 6 is exposed on the X1 side of the end wall portion 94 , and the other end of each is pulled out to the upper surface of the terminal block 96 .
  • a first gate terminal 131 , a first sense source terminal 132 , a sense drain terminal 133 , a first thermistor terminal 331 and a second thermistor terminal 332 are attached to the side wall portion 91 .
  • One end of each of the first gate terminal 131, the first sense source terminal 132, the sense drain terminal 133, the first thermistor terminal 331, and the second thermistor terminal 332 is exposed on the Y2 side of the side wall portion 91, and the other protrudes outward (Z1 side) of the case 9 from the upper surface (Z1 side surface) of the side wall portion 91 .
  • the sense drain terminal 133 is arranged near the end of the side wall portion 91 on the X2 side.
  • the first thermistor terminal 331 and the second thermistor terminal 332 are arranged near the end of the side wall portion 91 on the X1 side.
  • the second thermistor terminal 332 is arranged on the X1 side of the first thermistor terminal 331 .
  • the first gate terminal 131 and the first sense source terminal 132 are arranged near the center of the side wall portion 91 in the X1-X2 direction and on the X2 side of the center in the X1-X2 direction.
  • the first sense source terminal 132 is arranged on the X2 side of the first gate terminal 131 .
  • a second gate terminal 231 and a second sense source terminal 232 are attached to the side wall portion 92 .
  • One end of each of the second gate terminal 231 and the second sense source terminal 232 is exposed on the Y1 side of the side wall portion 92, and the other end of each of the side wall portions 92 extends from the upper surface of the side wall portion 92 (surface on the Z1 side) to the case. It protrudes outward from 9 (Z1 side).
  • the second gate terminal 231 and the second sense source terminal 232 are arranged near the center of the side wall portion 92 in the X1-X2 direction and on the X1 side of the center in the X1-X2 direction.
  • the second sense source terminal 232 is arranged on the X1 side of the second gate terminal 231 .
  • a first insulating substrate 10 and a second insulating substrate 20 are arranged on the Z1 side of the heat sink 2 . That is, the first insulating substrate 10 and the second insulating substrate 20 are arranged on the first main surface 2A of the heat sink 2 .
  • the second insulating substrate 20 is arranged on the X1 side of the first insulating substrate 10 .
  • the first insulating substrate 10 has conductive layers 11, 12, 13, 14 and 18 on the Z1 side surface and a conductive layer 19 on the Z2 side surface.
  • a conductive layer 19 is bonded to the radiator plate 2 with a bonding material 7 such as solder.
  • a plurality of, for example four, first transistors 110 are mounted on the conductive layer 13 .
  • the four first transistors 110 are arranged in the X1-X2 direction.
  • a first transistor group 110A is composed of four first transistors 110 .
  • a plurality of, for example eight, second diodes 220 are mounted on the conductive layer 12 .
  • the eight second diodes 220 are arranged in two rows of four in the X1-X2 direction.
  • the eight second diodes 220 constitute a second diode group 220A.
  • the second conductor and the seventh conductor are composed of an integral conductive layer 12 .
  • the conductive layer forming the second conductor and the conductive layer forming the seventh conductor may be formed of separate conductive layers and connected. That is, the present disclosure is not limited to a form in which the second conductor and the seventh conductor are configured from the conductive layer 12 that is integral.
  • the second insulating substrate 20 has conductive layers 21, 22, 23, 24, 25, 26, 27 and 28 on the Z1 side surface, and a conductive layer 29 on the Z2 side surface.
  • a conductive layer 29 is bonded to the radiator plate 2 with a bonding material 8 such as solder.
  • a plurality of, for example four, second transistors 210 are mounted on the conductive layer 23 .
  • the four second transistors 210 are arranged in the X1-X2 direction.
  • a second transistor group 210A is composed of four second transistors 210 .
  • a plurality of, for example eight, first diodes 120 are mounted on the conductive layer 25 .
  • the eight first diodes 120 are arranged in two rows of four in the X1-X2 direction.
  • the eight first diodes 120 constitute a first diode group 120A.
  • FIG. 4 is a cross-sectional view showing the first transistor.
  • FIG. 5 is a cross-sectional view showing the first diode.
  • FIG. 6 is a cross-sectional view showing the second transistor.
  • FIG. 7 is a cross-sectional view showing a second diode.
  • the first transistor 110 has a first gate electrode 111 , a first source electrode 112 and a first drain electrode 113 .
  • the first gate electrode 111 and the first source electrode 112 are arranged on the main surface of the first transistor 110 on the Z1 side, and the first drain electrode 113 is arranged on the main surface on the Z2 side of the first transistor 110 .
  • the first drain electrode 113 is bonded to the conductive layer 13 with a bonding material (not shown) such as solder.
  • the first transistor 110 is an example of a first switching element or a second switching element.
  • the first diode 120 has a first anode electrode 121 and a first cathode electrode 122 .
  • the first anode electrode 121 is arranged on the main surface of the first diode 120 on the Z1 side, and the first cathode electrode 122 is arranged on the main surface on the Z2 side of the first diode 120 .
  • the first cathode electrode 122 is bonded to the conductive layer 25 with a bonding material (not shown) such as solder.
  • the first diode 120 is an example of a first diode element or a second diode element.
  • the second transistor 210 has a second gate electrode 211 , a second source electrode 212 and a second drain electrode 213 .
  • the second gate electrode 211 and the second source electrode 212 are arranged on the main surface of the second transistor 210 on the Z1 side, and the second drain electrode 213 is arranged on the main surface on the Z2 side of the second transistor 210 .
  • a second drain electrode 213 is bonded to the conductive layer 23 with a bonding material (not shown) such as solder.
  • the second transistor 210 is an example of a first switching element or a second switching element.
  • the second diode 220 has a second anode electrode 221 and a second cathode electrode 222 .
  • the second anode electrode 221 is arranged on the main surface of the second diode 220 on the Z1 side, and the second cathode electrode 222 is arranged on the main surface on the Z2 side of the second diode 220 .
  • the second cathode electrode 222 is bonded to the conductive layer 12 with a bonding material (not shown) such as solder.
  • the second diode 220 is an example of a first diode element or a second diode element.
  • the semiconductor device 1 has multiple wires 31 , multiple wires 32 , multiple wires 41 , and multiple wires 42 .
  • the wire 31 connects the conductive layer 13 provided on the first insulating substrate 10 and the conductive layer 25 provided on the second insulating substrate 20 .
  • the wire 32 connects the conductive layer 12 provided on the first insulating substrate 10 and the conductive layer 24 provided on the second insulating substrate 20 .
  • the wire 41 connects the conductive layer 12 provided on the first insulating substrate 10 and the conductive layer 23 provided on the second insulating substrate 20 .
  • the wire 42 connects the conductive layer 14 provided on the first insulating substrate 10 and the conductive layer 22 provided on the second insulating substrate 20 .
  • the semiconductor device 1 has multiple wires 51 , multiple wires 52 , multiple wires 53 , multiple wires 54 , and multiple wires 55 .
  • the wires 51 connect the first gate electrodes 111 provided on each of the four first transistors 110 and the conductive layer 11 provided on the first insulating substrate 10 .
  • the wires 52 connect the first source electrodes 112 provided on each of the four first transistors 110 and the conductive layer 12 provided on the first insulating substrate 10 .
  • Wires 53 connect the first sense source electrodes (not shown) provided to each of the four first transistors 110 and the conductive layer 18 provided on the first insulating substrate 10 .
  • the wires 54 are connected to the second anode electrodes 221 respectively provided on the four second diodes 220 arranged on the Y1 side among the eight second diodes 220 and the conductive layer 14 provided on the first insulating substrate 10 . to connect.
  • the wires 55 are connected to the second anode electrodes 221 respectively provided in the four second diodes 220 arranged on the Y1 side among the eight second diodes 220 and the four second diodes 220 arranged on the Y2 side. are connected to the second anode electrodes 221 respectively provided on the .
  • the semiconductor device 1 has wires 61 , multiple wires 62 , multiple wires 63 , wires 64 , and wires 65 .
  • the wire 61 connects the conductive layer 11 provided on the first insulating substrate 10 and the first gate terminal 131 .
  • a wire 62 connects the conductive layer 12 provided on the first insulating substrate 10 and the first O terminal 5 .
  • a wire 63 connects the conductive layer 12 provided on the first insulating substrate 10 and the second O terminal 6 .
  • a wire 64 connects the conductive layer 13 provided on the first insulating substrate 10 and the sense drain terminal 133 .
  • a wire 65 connects the conductive layer 18 provided on the first insulating substrate 10 and the first sense source terminal 132 .
  • the semiconductor device 1 has multiple wires 71 , multiple wires 72 , multiple wires 73 , multiple wires 74 , and multiple wires 75 .
  • the wires 71 connect the second gate electrodes 211 provided on each of the four second transistors 210 and the conductive layer 21 provided on the second insulating substrate 20 .
  • the wires 72 connect the second source electrodes 212 provided on each of the four second transistors 210 and the conductive layer 22 provided on the second insulating substrate 20 .
  • Wires 73 connect the second sense source electrodes (not shown) provided on each of the four second transistors 210 and the conductive layer 28 provided on the second insulating substrate 20 .
  • the wires 74 are connected to the first anode electrodes 121 respectively provided on the four first diodes 120 arranged on the Y2 side among the eight first diodes 120 and the conductive layer 24 provided on the second insulating substrate 20 . to connect.
  • the wires 75 are connected to the first anode electrodes 121 provided to the four first diodes 120 arranged on the Y2 side among the eight first diodes 120 and the four first diodes 120 arranged on the Y1 side. are connected to the first anode electrodes 121 respectively provided on the .
  • the semiconductor device 1 has a wire 81, a plurality of wires 82, a plurality of wires 83, a wire 85, a wire 86, and a wire 87.
  • the wire 81 connects the conductive layer 21 provided on the second insulating substrate 20 and the second gate terminal 231 .
  • a wire 82 connects the conductive layer 22 provided on the second insulating substrate 20 and the N terminal 4 .
  • a wire 83 connects the conductive layer 25 provided on the second insulating substrate 20 and the P terminal 3 .
  • a wire 85 connects the conductive layer 28 provided on the second insulating substrate 20 and the second sense source terminal 232 .
  • a wire 86 connects the conductive layer 26 provided on the second insulating substrate 20 and the first thermistor terminal 331 .
  • a wire 87 connects the conductive layer 27 provided on the second insulating substrate 20 and the second thermistor terminal 332 .
  • the semiconductor device 1 has a thermistor 330 connected to the conductive layers 26 and 27 .
  • FIG. 8 is a circuit diagram showing the semiconductor device according to the embodiment.
  • the first cathode electrode 122 of the first diode 120 is connected to the P terminal 3 via the wire 83 and the conductive layer 25 .
  • the first drain electrode 113 of the first transistor 110 is connected to the P terminal 3 via the wire 83 , the conductive layer 25 , the wire 31 and the conductive layer 13 .
  • Conductive layer 12 is connected to first O-terminal 5 via wire 62 and to second O-terminal 6 via wire 63 .
  • a first source electrode 112 of a first transistor 110 is connected to the conductive layer 12 via a wire 52 .
  • the first anode electrode 121 of the first diode is connected to the conductive layer 12 via the wire 32 , the conductive layer 24 , and the wires 74 and 75 .
  • a first gate electrode 111 of the first transistor 110 is connected to the first gate terminal 131 via the wire 61 , the conductive layer 11 and the wire 51 .
  • a first sense source electrode of the first transistor 110 is connected to the first sense source terminal 132 via the wire 65 , the conductive layer 18 and the wire 53 .
  • the first drain electrode 113 of the first transistor 110 is connected to the sense drain terminal 133 via the wire 64 and the conductive layer 13 .
  • a second source electrode 212 of the second transistor 210 is connected to the N terminal 4 via the wire 82 , the conductive layer 22 and the wire 72 .
  • a second anode electrode 221 of a second diode 220 is connected to the N terminal 4 via a wire 82 , a conductive layer 22 , a wire 42 , and wires 54 and 55 .
  • a second cathode electrode 222 of the second transistor 210 is connected to the conductive layer 12 .
  • a second drain electrode 213 of the second transistor 210 is connected to the conductive layer 12 via the wire 41 and the conductive layer 23 .
  • a second gate electrode 211 of the second transistor 210 is connected to the second gate terminal 231 via the wire 81 , the conductive layer 21 and the wire 71 .
  • a second sense source electrode of the second transistor 210 is connected to the second sense source terminal 232 via the wire 85 , the conductive layer 28 and the wire 73 .
  • One electrode of the thermistor 330 is connected to the first thermistor terminal 331 via the wire 86 and the conductive layer 26 .
  • the other electrode of thermistor 330 is connected to second thermistor terminal 332 via wire 87 and conductive layer 27 .
  • the first drain electrode 113 of the first transistor 110 and the first cathode electrode 122 of the first diode 120 are commonly connected to the P terminal 3, and the first source electrode 112 and the first anode electrode 121 are connected in common. are connected to the first O terminal 5 and the second O terminal 6 in common. That is, the first transistor 110 and the first diode 120 are connected in parallel between the P terminal 3 and the first O terminal 5 and the second O terminal 6 . As shown in FIGS. 1 and 2, a plurality of sets of first transistors 110 and first diodes 120 are connected in parallel between P terminal 3 and first O terminal 5 and second O terminal 6 .
  • the second drain electrode 213 of the second transistor 210 and the second cathode electrode 222 of the second diode 220 are commonly connected to the first O terminal 5 and the second O terminal 6, and the second source electrode 212 and the second anode electrode are connected in common.
  • 221 are commonly connected to the N terminal 4 . That is, the second transistor 210 and the second diode 220 are connected in parallel between the N terminal 4 and the first O terminal 5 and the second O terminal 6 .
  • a plurality of sets of second transistors 210 and second diodes 220 are connected in parallel between N terminal 4 and first O terminal 5 and second O terminal 6 .
  • the upper arm 100 includes a first transistor 110 (first transistor group 110A) and a first diode 120 (first diode group 120A).
  • Lower arm 200 includes a second transistor 210 (second transistor group 210A) and a second diode 220 (second diode group 220A).
  • An upper arm 100 and a lower arm 200 are connected in series between the P terminal 3 and the N terminal 4 .
  • Upper arm 100 may include P terminal 3 and O terminal, and lower arm 200 may include N terminal and O terminal.
  • the plurality of first transistors 110 included in the upper arm 100 may be provided only on the first insulating substrate 10, and the plurality of first diodes 120 included in the upper arm 100 may be provided only on the second insulating substrate 20.
  • the plurality of second transistors 210 included in the lower arm 200 may be provided only on the second insulating substrate 20, and the plurality of second diodes 220 included in the lower arm 200 may be provided only on the first insulating substrate 10. .
  • 9 to 12 are schematic diagrams showing the operation of the semiconductor device according to the embodiment.
  • FIG. 9 shows the path of the current I1 flowing from the P terminal 3 to the first O terminal 5 and the second O terminal 6.
  • current I1 flows from P terminal 3 through wire 83, conductive layer 25, wire 31, conductive layer 13, first transistor group 110A, wire 52, conductive layer 12, It flows to the first O terminal 5 and the second O terminal 6 via wires 62 and 63 .
  • FIG. 10 shows the path of the current I2 flowing from the first O terminal 5 and the second O terminal 6 to the P terminal 3.
  • current I2 flows from first O terminal 5 and second O terminal 6 to wires 62 and 63, conductive layer 12, wire 32, conductive layer 24, wires 74 and 75, and first It flows to the P terminal 3 via the diode group 120A, the conductive layer 25, and the wire 83.
  • FIG. 10 shows the path of the current I2 flowing from the first O terminal 5 and the second O terminal 6 to the P terminal 3.
  • current I2 flows from first O terminal 5 and second O terminal 6 to wires 62 and 63, conductive layer 12, wire 32, conductive layer 24, wires 74 and 75, and first It flows to the P terminal 3 via the diode group 120A, the conductive layer 25, and the wire 83.
  • the current I1 flowing from the P terminal 3 to the first O terminal 5 and the second O terminal 6 flows through the wire 31 but does not flow through the wire 32.
  • the current I2 flowing from the first O-terminal 5 and the second O-terminal 6 to the P-terminal 3 flows through the wire 32 but does not flow through the wire 31 .
  • FIG. 11 shows the path of the current I3 flowing from the N terminal 4 to the first O terminal 5 and the second O terminal 6.
  • current I3 flows from N terminal 4 through wire 82, conductive layer 22, wire 72, second transistor group 210A, conductive layer 23, wire 41, conductive layer 12, It flows to the first O-terminal 5 and the second O-terminal 6 via wires 62 and 63 .
  • FIG. 12 shows the path of the current I4 flowing from the first O terminal 5 and the second O terminal 6 to the N terminal 4.
  • current I4 flows from first O terminal 5 and second O terminal 6 to wires 62 and 63, conductive layer 12, second diode group 220A, wires 54 and 55, and conductive layer 14. , through the wire 42 , the conductive layer 22 and the wire 82 to the N terminal 4 .
  • the current I3 flowing from the N terminal 4 to the first O terminal 5 and the second O terminal 6 flows through the wire 41 but does not flow through the wire 42.
  • the current I4 flowing from the first O terminal 5 and the second O terminal 6 to the N terminal 4 flows through the wire 42 but does not flow through the wire 41 .
  • the upper arm 100 includes the first transistor 110 and the first diode 120, the first transistor 110 is provided on the first insulating substrate 10, and the first diode 120 is provided on the second insulating substrate 20.
  • the first transistor 110 is provided on the first insulating substrate 10
  • the first diode 120 is provided on the second insulating substrate 20.
  • the lower arm 200 includes a second transistor 210 and a second diode 220 , the second transistor 210 is provided on the second insulating substrate 20 and the second diode 220 is provided on the first insulating substrate 10 . Therefore, between the current I3 flowing from the N terminal 4 to the first O terminal 5 and the second O terminal 6 and the current I4 flowing from the first O terminal 5 and the second O terminal 6 to the N terminal 4, wires 41 and 42 is different. Therefore, compared to the case where the current flowing between the first insulating substrate 10 and the second insulating substrate 20 passes through the same connection member, the amount of heat generated by the wires 41 and 42 can be reduced.
  • the semiconductor device 1 transitions to a dynamic avalanche state, for example, when the surge voltage becomes excessive. Excessive surge voltages can occur at turn-off. In addition, a short-circuit current may flow through the first transistor 110 or the second transistor 210 due to a short-circuit failure due to a failure of the load or the like, and the surge voltage may become excessive when the current is cut off by the protection circuit.
  • the first transistor 110, the second transistor 210, the first diode 120, and the second diode 220 have the following characteristics, so excellent avalanche resistance can be obtained.
  • FIG. 13 is a diagram showing an example of characteristics of the first transistor 110, the second transistor 210, the first diode 120, and the second diode 220.
  • FIG. The horizontal axis in FIG. 13 indicates the junction temperature Tj during use, and the vertical axis indicates the breakdown voltage.
  • a solid line in FIG. 13 indicates the characteristics of the first diode 120 and the second diode 220 , and a two-dot chain line indicates the characteristics of the first transistor 110 and the second transistor 210 .
  • the first diode 120 and the second diode 220 have a breakdown voltage BV1 that has junction temperature dependence.
  • the breakdown voltage BV1 increases as the junction temperature increases.
  • electrons are accelerated to high speed in a semiconductor and collide with atoms, producing more electrons in an avalanche fashion.
  • the higher the junction temperature the greater the lattice vibration in the semiconductor, and the more the acceleration of electrons is suppressed. Therefore, the higher the junction temperature, the less likely the avalanche breakdown occurs and the higher the breakdown voltage.
  • the breakdown voltage BV1 is an example of a first breakdown voltage or a seventh breakdown voltage.
  • the breakdown voltage at a certain junction temperature Tj of a transistor can be determined by the following two methods.
  • the breakdown voltage is defined as the voltage when the current value reaches 1 mA.
  • a wire or the like of a transistor to be measured in a semiconductor device is cut, and the circuit is made independent from other transistors, diodes, and the like when measuring the breakdown voltage described below.
  • the transistor itself is placed in a constant temperature bath, or the semiconductor device including the transistor is placed in a constant temperature bath, and the temperature of the constant temperature bath is set to a temperature Ts equal to the junction temperature Tj .
  • the breakdown voltage is measured while the temperature of the constant temperature bath is stabilized at the temperature Ts .
  • a semiconductor device analyzer (model number: BA1500A) manufactured by Keysight Technologies, Inc. can be used to measure the breakdown voltage.
  • the temperature Tc of the case 9 where the thermistor 330 is installed is measured based on the output signals from the first thermistor terminal 331 and the second thermistor terminal 332 connected to the thermistor 330 . Then, using the loss generated from the current value and voltage value flowing in each transistor or other element, that is, heat generation P, and the thermal resistance R th (jc) that can be read from the design value or data sheet, each transistor etc. A temperature change ⁇ T j of the element is calculated. That is, the temperature change ⁇ T j of elements such as transistors is calculated from the product of heat generation P and thermal resistance R th(j ⁇ c) . The junction temperature Tj of the transistor to be measured is specified by analyzing these data using a simulation or the like.
  • the temperature Tc of the case 9 may be obtained by measuring the temperature of the back surface of the heat sink 2 using a thermocouple.
  • the loss generated from the current value and voltage value flowing in each transistor or other element, that is, heat generation P, and the thermal resistance R th (jc) that can be read from the design value or data sheet are used for each transistor, etc.
  • the temperature change ⁇ Tj of the element is calculated. That is, the temperature change ⁇ T j of elements such as transistors is calculated from the product of heat generation P and thermal resistance R th(j ⁇ c) .
  • the junction temperature Tj of the transistor to be measured is specified by analyzing these data using a simulation or the like.
  • a semiconductor device analyzer (model number: BA1500A) manufactured by Keysight Technologies, Inc. can be used to measure the breakdown voltage.
  • the first transistor 110 and the second transistor 210 have a breakdown voltage BV2 that has junction temperature dependence.
  • the breakdown voltage BV2 increases as the junction temperature increases.
  • the breakdown voltage BV2 includes a breakdown voltage BVDSS3 when the junction temperature is 50.degree. C. and a breakdown voltage BVDSS4 when the junction temperature is 300.degree.
  • the breakdown voltage BV2 is an example of a second breakdown voltage or an eighth breakdown voltage
  • the breakdown voltage BVDSS3 is an example of a third breakdown voltage or a ninth breakdown voltage
  • the breakdown voltage BVDSS4 is an example of a fourth breakdown voltage. It is an example of a down voltage or a tenth breakdown voltage.
  • the breakdown voltage at the junction temperature Tj of the diode can be measured by the same method as the above-described method for measuring the breakdown voltage of the transistor.
  • the breakdown voltage BV2 of the first transistor 110 within the junction temperature range of 50°C to 70°C is lower than the breakdown voltage BV1 of the first diode 120 within the junction temperature range of 50°C to 70°C. That is, the breakdown voltage BV2 when the junction temperature of the first transistor 110 is 70.degree. C. is lower than the breakdown voltage BV1 when the junction temperature of the first diode 120 is 50.degree. Therefore, when the junction temperature of the first transistor 110 is within the temperature range of 50° C. or higher and 70° C. or lower, the first transistor 110 is turned on before the first diode 120 when the upper arm 100 transitions to the dynamic avalanche state. break down. Note that the junction temperature of the first transistor 110 and the junction temperature of the first diode 120 do not need to match during operation of the semiconductor device 1 .
  • the breakdown voltage BV2 of the second transistor 210 within the junction temperature range of 50°C to 70°C is lower than the breakdown voltage BV1 of the second diode 220 within the junction temperature range of 50°C to 70°C. That is, the breakdown voltage BV2 when the junction temperature of the second transistor 210 is 70°C is lower than the breakdown voltage BV1 when the junction temperature of the second diode 220 is 50°C. Therefore, when the junction temperature of the second transistor 210 and the junction temperature of the second diode 220 are within the temperature range of 50° C. or higher and 70° C. or lower, when the lower arm 200 transitions to the dynamic avalanche state, the second transistor 210 It breaks down earlier than the second diode 220 . Note that the junction temperature of the second transistor 210 and the junction temperature of the second diode 220 do not need to match during operation of the semiconductor device 1 .
  • the breakdown voltage BV1 of the first diode 120 within the junction temperature range of 50° C. or higher and 70° C. or lower is different from the breakdown voltage BVDSS3 when the junction temperature of the first transistor 110 is 50° C. It is between the breakdown voltage BVDSS4 at 300°C.
  • the breakdown voltage BV1 of the second diode 220 within the junction temperature range of 50° C. to 70° C. is the breakdown voltage BVDSS3 when the junction temperature of the second transistor 210 is 50° C. and the junction temperature of 300° C. and the breakdown voltage BVDSS4 at that time.
  • the junction temperature of the first transistor 110 is, for example, 50.degree. C. or higher and 70.degree. C. or lower while the switching operations shown in FIGS. Therefore, the first transistor 110 does not break down due to a rise in junction temperature.
  • a voltage lower than the rated voltage is applied between the P terminal 3 and the first O terminal 5 or the second O terminal 6 .
  • an overvoltage exceeding the rated voltage may be applied between the P terminal 3 and the O terminal, and the upper arm 100 may transition to a dynamic avalanche state.
  • Overvoltage is applied, for example, when a short circuit occurs due to a load failure and a surge voltage is generated when the protection circuit is turned off, or when the switching speed is excessively increased due to an insufficient gate resistance, the surge voltage is also excessive. and is applied.
  • the junction temperature during operation of the first transistor 110 and the like for example, 50° C. or higher and 70° C. or lower is a relatively low temperature.
  • the junction temperature is 50° C. or higher and 70° C. or lower immediately after the start of the switching operation, at low load, in a low temperature environment, or the like.
  • the junction temperature may be higher or lower than the range of 50° C. or higher and 70° C. or lower.
  • the junction temperature of the second transistor 210 is, for example, 50° C. or higher and 70° C. or lower while the switching operations shown in FIGS. Therefore, the second transistor 210 does not break down due to the rise in junction temperature.
  • a voltage lower than the rated voltage is applied between the N terminal 4 and the first O terminal 5 or the second O terminal 6 .
  • an overvoltage exceeding the rated voltage may be applied between the N terminal 4 and the O terminal, and the lower arm 200 may transition to a dynamic avalanche state.
  • the first transistor 110 Since the breakdown voltage BV2 of the first transistor 110 is lower than the breakdown voltage BV1 of the first diode 120, the first transistor 110 will be ahead of the first diode 120 when the upper arm 100 transitions to the dynamic avalanche state. break down to Then, an avalanche current flows through the first transistor 110, and the junction temperature of the first transistor 110 rises due to heat generated by the avalanche energy. When the junction temperature of the first transistor 110 reaches the breakdown temperature, the first transistor 110 breaks down.
  • the breakdown voltage BV2 of the second transistor 210 is lower than the breakdown voltage BV1 of the second diode 220, so that when the lower arm 200 transitions to the dynamic avalanche state, the second transistor 210 will be in the second diode 220 state. Break down before. Then, an avalanche current flows through the second transistor 210, and the junction temperature of the second transistor 210 rises due to heat generated by the avalanche energy. When the junction temperature of the second diode 220 reaches the breakdown temperature, the second transistor 210 breaks down.
  • the junction temperature of the first transistor 110 and the junction temperature of the second transistor 210 are suppressed from reaching the breakdown temperature, thereby increasing the avalanche resistance. can improve.
  • the first diode 120 and the first transistor 110 are arranged on different conductors. Therefore, when the first transistor 110 undergoes an avalanche breakdown, the temperature rises earlier than when the first diode 120 and the first transistor 110 are placed on a common conductor. , the avalanche breakdown voltage rises and breakdown of the first diode 120 begins. Therefore, the avalanche current can be borne by the first diode 120 and the first transistor 110 at an early stage, and damage to the first transistor 110 due to the concentrated borne by only the first transistor 110 can be suppressed.
  • the second diode 220 and the second transistor 210 are arranged on different conductors. Therefore, when the second transistor 210 undergoes avalanche breakdown, the temperature rises faster and the temperature rises earlier than when the second diode 220 and the second transistor 210 are placed on a common conductor. , the avalanche breakdown voltage rises and breakdown of the second diode 220 begins. Therefore, the avalanche current can be borne by the second diode 220 and the second transistor 210 at an early stage, and damage to the second transistor 210 due to the concentrated borne by only the second transistor 210 can be suppressed.
  • FIG. 14 is a timing chart showing voltage and current changes in the lower arm 200 when transitioning to the dynamic avalanche state.
  • the junction temperature TjTr of the second transistor 210 and the junction temperature TjDi of the second diode 220 are, for example, 50° C. or higher and 70° C. in both the ON state and the OFF state. °C or less.
  • the junction temperature TjTr of the second transistor 210 and the junction temperature TjDi of the second diode 220 may be the same or different.
  • the inter-terminal voltage V ON between the N terminal 4 and the O terminal is substantially 0 V
  • the current I Tr greater than 0 A flows through the second transistor 210 .
  • the current IDi flowing through the second diode 220 is substantially 0A.
  • the breakdown voltage BV2 of the second transistor 210 within the junction temperature range of 50° C. or higher and 70° C. or lower is the breakdown voltage of the second diode 220 within the junction temperature range of 50° C. or higher and 70° C. or lower. Lower than BV1. Therefore, the second transistor 210 breaks down before the second diode 220 breaks down. Further, as the second transistor 210 breaks down, the terminal voltage VON sharply rises from 0 V to the breakdown voltage BV2 corresponding to the junction temperature TjTr of the second transistor 210 at that time.
  • the current I Tr flowing through the second transistor 210 does not drop to 0 A immediately, but gradually drops. That is, an avalanche current flows through the second transistor 210 . For this reason, the second transistor 210 consumes the power obtained by multiplying the voltage V ON between the terminals and the current I Tr . Junction temperature TjTr rises.
  • the breakdown voltage BV2 of the second transistor 210 has temperature dependence and increases as the junction temperature increases. Therefore, when the junction temperature TjTr rises, the breakdown voltage BV2 of the second transistor 210 rises and the terminal voltage VON rises.
  • the breakdown voltage BV1 of the second diode 220 within the junction temperature range of 50° C. or more and 70° C. or less is the breakdown voltage BVDSS3 when the junction temperature is 50° C. and the breakdown voltage BVDSS4 when the junction temperature is 300°C. Therefore, before the junction temperature TjTr of the second transistor 210 reaches 300° C., the terminal voltage V ON reaches the breakdown voltage BV1 of the second diode 220 within the junction temperature range of 50° C. or higher and 70° C. or lower. , and the second diode 220 also breaks down.
  • the junction temperature TjTr of the second transistor 210 slightly rises after the avalanche current begins to flow through the second diode 220, but the junction temperature of the second transistor 210 rises immediately after the avalanche current begins to flow. TjTr may decrease.
  • the breakdown of the second transistor 210 is suppressed, and the avalanche resistance can be improved.
  • the first diode 120 breaks down in the same manner as when the lower arm 200 transitions to the dynamic avalanche state (see FIG. 14).
  • the first transistor 110 breaks down before and an avalanche current flows through the first transistor 110 . Therefore, the junction temperature TjTr of the first transistor 110 increases. As the junction temperature TjTr rises, the breakdown voltage BV2 of the first transistor 110 rises, and the inter-terminal voltage VPO between the P terminal 3 and the O terminal rises.
  • the avalanche current starts to flow through the first diode 120 as well, and the avalanche current flowing through the first transistor 110 is reduced accordingly. Therefore, the temperature rise of the first transistor 110 is suppressed, and the junction temperature TjTr of the first transistor 110 is prevented from reaching the breakdown temperature.
  • the breakdown of the first diode 120 is suppressed, and the avalanche resistance can be improved.
  • a plurality of sets of first transistors 110 and first diodes 120 are connected in parallel between the P terminal 3 and the first O terminal 5 and the second O terminal 6, and the second transistors 210 and the second diodes 220 are connected to the N terminal 4.
  • a plurality of sets are connected in parallel between the first O-terminal 5 and the second O-terminal 6 . Therefore, a larger current can flow.
  • the breakdown voltage BV1 and the breakdown voltage BV2 have junction temperature dependence.
  • the temperature of the environment in which the transistor or diode is placed environmental temperature (also referred to as ambient temperature)), such as the temperature of a thermostat, is used as the junction temperature of the transistor or diode.
  • the junction temperature dependence is equivalent to the environmental temperature dependence, and in the above embodiment, as shown in FIG. , lower than the first breakdown voltage BV1 within the environmental temperature range of 50° C. or higher and 70° C. or lower, and the second breakdown voltage BV2 is lower than the third breakdown voltage BVDSS3 when the environmental temperature is 50° C.
  • FIG. 15 is a diagram showing another example of the characteristics of the first transistor 110, the second transistor 210, the first diode 120 and the second diode 220.
  • FIG. The horizontal axis in FIG. 15 indicates the environmental temperature Te , and the vertical axis indicates the breakdown voltage.
  • a solid line in FIG. 15 indicates the characteristics of the first diode 120 and the second diode 220 , and a two-dot chain line indicates the characteristics of the first transistor 110 and the second transistor 210 .
  • the breakdown voltage BV2 is the breakdown voltage BVDSS5 when the junction temperature or the environmental temperature is 250° C.
  • the breakdown voltage BV1 within the range of the junction temperature or the environmental temperature of 50° C. or higher and 70° C. or lower is the breakdown voltage. It may be between BVDSS3 and breakdown voltage BVDSS5.
  • the breakdown temperature of the first transistor 110 and the second transistor 210 is 300° C. or less, if the breakdown temperature exceeds 250° C., the first transistor 110 and the second transistor 210 are destroyed before An avalanche current can flow through the first diode 120 and the second diode 220, and the avalanche resistance of the upper arm 100 and the lower arm 200 can be improved.
  • the breakdown voltage BVDSS5 is an example of a fifth breakdown voltage or an eleventh breakdown voltage.
  • the breakdown voltage BV2 has a breakdown voltage BVDSS6 when the junction temperature or the environmental temperature is 175° C.
  • the breakdown voltage BV1 within the range of the junction temperature or the environmental temperature of 50° C. or higher and 70° C. or lower is the breakdown voltage. It may be between BVDSS3 and breakdown voltage BVDSS6.
  • the breakdown voltage BVDSS6 is an example of a sixth breakdown voltage or a twelfth breakdown voltage.
  • the breakdown voltage tends to be lowered, and it is not easy to obtain a high breakdown voltage while obtaining a low on-resistance.
  • the first transistor 110 and the second transistor 210 do not have a particularly high withstand voltage, a good avalanche resistance can be obtained. can be adopted.
  • the breakdown voltages of the first transistor 110, the first diode 120, the second transistor 210, and the second diode 220 can be adjusted, for example, by the impurity concentration of the semiconductor layers forming these, the termination structure, and the like.
  • the first transistor 110 and the second transistor 210 may be field effect transistors such as MOS (metal-oxide-semiconductor) field effect transistors made of silicon carbide.
  • First diode 120 and second diode 220 may be Schottky barrier diodes made of silicon carbide. By using silicon carbide, excellent breakdown voltage can be obtained.

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Abstract

Ce dispositif à semi-conducteur comprend : une première borne; une seconde borne; un premier élément de diode qui est connecté entre la première borne et la seconde borne, et qui présente une première tension de claquage présentant une dépendance à la température de jonction; et un premier élément de commutation connecté en parallèle au premier élément de diode entre la première borne et la seconde borne, et présentant une deuxième tension de claquage présentant une dépendance à la température de jonction. La deuxième tension de claquage dans la plage d'une température de jonction de 50 à 70 °C est inférieure à la première tension de claquage dans la plage d'une température de jonction de 50 à 70 °C, et la deuxième tension de claquage comprend une troisième tension de claquage lorsque la température de jonction est égale à 50 °C, et une quatrième tension de claquage lorsque la température de jonction est égale à 300 °C. La première tension de claquage dans la plage de la température de jonction de 50 à 70 °C est comprise entre la troisième tension de claquage et la quatrième tension de claquage.
PCT/JP2022/002470 2021-01-25 2022-01-24 Dispositif à semi-conducteur WO2022158596A1 (fr)

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JPH03236280A (ja) * 1990-02-14 1991-10-22 Hitachi Ltd 半導体装置
JP2009254158A (ja) * 2008-04-08 2009-10-29 Toyota Motor Corp スイッチング装置
JP2011108684A (ja) * 2009-11-12 2011-06-02 Sumitomo Electric Ind Ltd 半導体装置
JP2013229956A (ja) * 2012-04-24 2013-11-07 Fuji Electric Co Ltd パワー半導体モジュール
JP2013236507A (ja) * 2012-05-10 2013-11-21 Fuji Electric Co Ltd パワー半導体モジュール

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03236280A (ja) * 1990-02-14 1991-10-22 Hitachi Ltd 半導体装置
JP2009254158A (ja) * 2008-04-08 2009-10-29 Toyota Motor Corp スイッチング装置
JP2011108684A (ja) * 2009-11-12 2011-06-02 Sumitomo Electric Ind Ltd 半導体装置
JP2013229956A (ja) * 2012-04-24 2013-11-07 Fuji Electric Co Ltd パワー半導体モジュール
JP2013236507A (ja) * 2012-05-10 2013-11-21 Fuji Electric Co Ltd パワー半導体モジュール

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