WO2022134134A1 - 显示模组、制备方法以及显示装置 - Google Patents

显示模组、制备方法以及显示装置 Download PDF

Info

Publication number
WO2022134134A1
WO2022134134A1 PCT/CN2020/140230 CN2020140230W WO2022134134A1 WO 2022134134 A1 WO2022134134 A1 WO 2022134134A1 CN 2020140230 W CN2020140230 W CN 2020140230W WO 2022134134 A1 WO2022134134 A1 WO 2022134134A1
Authority
WO
WIPO (PCT)
Prior art keywords
ultra
layer
thin glass
display module
glass
Prior art date
Application number
PCT/CN2020/140230
Other languages
English (en)
French (fr)
Inventor
蔡振飞
Original Assignee
武汉华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US17/280,861 priority Critical patent/US20230422580A1/en
Publication of WO2022134134A1 publication Critical patent/WO2022134134A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8721—Metallic sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8793—Arrangements for polarized light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8794—Arrangements for heating and cooling

Definitions

  • the present application relates to the field of display technology, and in particular, to a display module, a preparation method and a display device.
  • Flexible OLED (Organic Light Emitting Diode, OLED) displays have the advantages of active light emission, large viewing angle, wide color gamut, high brightness, fast response speed, low power consumption, and structurally bendable and foldable. more and more popular in the market.
  • bendable and foldable properties of the flexible OLED display various forms of foldable display devices can be prepared, which are easy to carry and store when going out.
  • the current flexible OLED display manufacturing process generally includes: using substrate glass as a substrate, coating PI (Polyimide, polyimide) flexible film on the substrate glass layer, and then make a TFT (Thin Film Transistor, thin film transistor) array and a top emission OLED device on the PI flexible film layer.
  • the pixel anode of the top emission device adopts a reflective anode
  • the cathode adopts a transparent cathode, so the light is emitted upward.
  • the module process (Module) is carried out.
  • the bonding process is first performed, and then the laser stripping process is used.
  • the Lift Off, LLO) process separates the substrate glass from the PI flexible film layer.
  • the laser lift-off process has high requirements on cleanliness and laser uniformity, and it is difficult to achieve large size. Once foreign particles (particles) fall, the PI flexible film layer will be broken and the flexible OLED display will fail.
  • the existing flexible OLED display manufacturing process needs to use a laser to peel off the substrate glass, and the problem of poor effect needs to be solved.
  • the present application provides a display module, a preparation method and a display device to solve the technical problem that the existing flexible OLED display production process needs to use laser to peel off the substrate glass and the effect is not good.
  • An embodiment of the present application provides a display module, which includes a driving circuit layer, a light-emitting functional layer, an encapsulation layer, and a support structure stacked on an ultra-thin glass.
  • the driving circuit layer is arranged on one side of the ultra-thin glass.
  • the light-emitting functional layer is disposed on a side of the driving circuit layer away from the ultra-thin glass.
  • the encapsulation layer is disposed on a side of the light-emitting functional layer away from the driving circuit layer.
  • the support structure is disposed on a side of the encapsulation layer away from the light-emitting functional layer.
  • the support structure includes a back plate.
  • the support structure includes a back plate and a stainless steel film, the back plate is attached to the packaging layer, and the stainless steel film is attached to the back plate.
  • a polarizer is further included, and the polarizer is disposed on a side of the ultra-thin glass away from the driving circuit layer.
  • a color filter layer is further included, and the color filter layer is disposed on a side of the ultra-thin glass away from the driving circuit layer.
  • a touch function layer is further included, and the touch function layer is disposed between the ultra-thin glass and the driving circuit layer.
  • a touch panel is further included, and the touch panel is attached to a side of the ultra-thin glass away from the driving circuit layer.
  • the thickness of the ultra-thin glass ranges from 30 micrometers to 60 micrometers.
  • Embodiments of the present application further provide a method for manufacturing a display module, which includes: providing a display panel, the display panel comprising a substrate glass, a driving circuit layer, a light-emitting functional layer, and an encapsulation layer; and attaching a back cover on the encapsulation layer plate; thinning the substrate glass to a preset thickness to form an ultra-thin glass; and attaching a polarizer under the ultra-thin glass.
  • the step of attaching a polarizer under the ultra-thin glass includes: attaching a touch panel under the ultra-thin glass; The polarizer is attached under the touch panel.
  • the display panel further includes a touch function layer located between the substrate glass and the driving circuit layer, and the ultra-thin glass is attached under the ultra-thin glass.
  • the step of attaching the polarizer includes: using optical glue to directly attach the polarizer under the ultra-thin glass.
  • the predetermined thickness ranges from 30 microns to 60 microns.
  • the method for manufacturing a display module after the substrate glass is thinned to a preset thickness to form an ultra-thin glass, the method further includes: A stainless steel film is attached on the back plate.
  • the step of thinning the substrate glass to thin the substrate glass to a preset thickness to form ultra-thin glass includes: A protective film is attached to the backplane, and the protective film covers the backplane and the sidewalls of the driving circuit layer, the light-emitting functional layer and the encapsulation layer; the substrate glass is placed in a preset concentration of the etching solution; after a preset time period, the substrate glass is thinned to a preset thickness to form an ultra-thin glass, and the ultra-thin glass is taken out; the ultra-thin glass is cleaned, and the protective film is removed.
  • the etching solution includes an acidic etching solution.
  • the step of thinning the substrate glass to thin the substrate glass to a preset thickness to form ultra-thin glass includes: The substrate glass is thinned to a preset thickness by grinding to form an ultra-thin glass, and a convex-concave structure is formed on the surface of the ultra-thin glass.
  • the step of thinning the substrate glass to thin the substrate glass to a preset thickness to form ultra-thin glass includes: using plasma In the etching method, the substrate glass is thinned to a predetermined thickness to form an ultra-thin glass, and a convex-concave structure is formed on the surface of the ultra-thin glass.
  • Embodiments of the present application further provide a display device, which includes a display module, and the display module includes a driving circuit layer, a light-emitting functional layer, an encapsulation layer, and a support structure stacked on an ultra-thin glass.
  • the driving circuit layer is arranged on one side of the ultra-thin glass.
  • the light-emitting functional layer is disposed on a side of the driving circuit layer away from the ultra-thin glass.
  • the encapsulation layer is disposed on a side of the light-emitting functional layer away from the driving circuit layer.
  • the support structure is disposed on a side of the encapsulation layer away from the light-emitting functional layer.
  • the display module further includes a touch function layer, and the touch function layer is disposed between the ultra-thin glass and the driving circuit layer.
  • the display module further includes a touch panel, and the touch panel is attached to a side of the ultra-thin glass away from the driving circuit layer.
  • the display module and its preparation method and the display device provided by the present application directly fabricate the driving circuit layer and the light-emitting functional layer on the substrate glass, then thin the substrate glass to form ultra-thin glass, and obtain ultra-thin glass by processing the substrate glass. Thin glass, and replaces the conventional PI flexible film layer to support the panel, and no longer needs to use the laser peeling process to separate the substrate glass and the PI flexible film layer, avoiding the use of the laser peeling process for high requirements on cleanliness and laser uniformity.
  • the realization of large size and the existence of foreign particles can cause many problems such as the rupture of the PI flexible film layer, which solves the problem that the existing flexible OLED display production process needs to use laser to peel off the substrate glass and the effect is not good.
  • FIG. 1 is a schematic diagram of a first cross-sectional structure of a flexible display panel provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a second cross-sectional structure of a flexible display panel provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of a first cross-sectional structure of a display module provided by an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional structure diagram of a display panel according to an embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional structure diagram of the touch functional layer in FIG. 4 .
  • FIG. 6 is a schematic diagram of a second cross-sectional structure of a display module provided by an embodiment of the present application.
  • FIG. 7 is a schematic flowchart of a method for manufacturing a display module provided by an embodiment of the present application.
  • FIG. 8 to FIG. 20 are schematic diagrams of the structures of the film layers prepared in each step in the method for manufacturing a display module provided by the embodiments of the present application.
  • FIG. 1 is a schematic diagram of a first cross-sectional structure of a flexible display panel provided by an embodiment of the present application.
  • the flexible display panel 11 includes an ultra-thin glass (Ultra Thin Glass, UTG) 1 , a driving circuit layer 2 , a light-emitting functional layer 3 and an encapsulation layer 4 .
  • the driving circuit layer 2 is arranged on one side of the ultra-thin glass 1; the light-emitting functional layer 3 is arranged on the side of the driving circuit layer 2 away from the ultra-thin glass 1; the encapsulation layer 4 is arranged on the light-emitting functional layer 3 A side away from the driving circuit layer 2 .
  • the driving circuit layer 2 is used to drive the light-emitting functional layer 3 to emit light, and provide pixels for the flexible display panel 11 to display;
  • the encapsulation layer 4 is used to protect the light-emitting device of the light-emitting functional layer 3 from water. Oxygen intrusion leads to failure of light-emitting devices.
  • the thickness of the ultra-thin glass 1 ranges from 30 microns to 60 microns.
  • the thickness of the ultra-thin glass 1 is very thin, and has the characteristics of being bendable, curly and not broken.
  • the ultra-thin glass 1 is used as the base substrate, in addition to supporting the functions of the flexible display panel 11
  • the film layer (including the driving circuit layer 2, the light-emitting functional layer 3 and the encapsulation layer 4, etc.) can also enable the flexible display panel 11 to be bent or curled, and the high modulus of the ultra-thin glass 1 can reduce the The stress of each functional film layer when the flexible display panel 11 is bent or rolled.
  • each functional film layer on the ultra-thin glass 1 is first fabricated on a conventional substrate glass. Assuming that the thickness of the ultra-thin glass 1 is formed, the preset thickness is the thickness range of the ultra-thin glass 1 described above.
  • the ultra-thin glass 1 is obtained by processing the substrate glass, which replaces the conventional PI flexible film layer support panel, and thus does not need to use a laser lift-off process to make the substrate glass and PI flexible.
  • the separation of the film layers avoids many problems such as the high requirements of cleanliness and laser uniformity in the laser lift-off process, the difficulty of achieving large size, and the rupture of the PI flexible film layer due to the presence of foreign particles, which solves the existing flexible OLED display production process.
  • the problem of using laser to peel off the substrate glass and the effect is not good.
  • FIG. 2 is a schematic diagram of a second cross-sectional structure of the flexible display panel provided by the embodiment of the present application.
  • the flexible display panel 11 ′ further includes a touch function layer 20 , and the touch function layer 20 is disposed between the ultra-thin glass 1 and the driving circuit layer 2 .
  • the touch function layer 20 adopts an incell touch solution.
  • FIG. 3 is a schematic cross-sectional structure diagram of a display module provided by an embodiment of the present application
  • FIG. 4 is a cross-sectional structure schematic diagram of a display panel provided by an embodiment of the present application.
  • the display module 100 includes a display panel 10 , a polarizer 30 disposed on the light-emitting side of the display panel 10 , and a support structure 40 attached to the non-light-emitting side of the display panel 10 .
  • the display module 100 adopts bottom emission.
  • the display panel 10 includes any one of the flexible display panels in the above embodiments.
  • the display panel 10 includes an ultra-thin glass 1 and a touch function layer 20 stacked on the ultra-thin glass 1 in sequence. , a driving circuit layer 2, a light-emitting functional layer 3, and an encapsulation layer 4, wherein the thickness of the ultra-thin glass 1 ranges from 30 microns to 60 microns; side of the direction.
  • the touch function layer 20 is disposed on the ultra-thin glass 1 , the touch function layer 20 adopts an incell touch solution, and the touch function layer 20 is directly fabricated on the display panel 10 On the ultra-thin glass 1, the thickness of the display panel 10 can be reduced, and the integration degree of the display panel 10 can be improved.
  • the touch functional layer 20 is first fabricated on the ultra-thin glass 1 , and then the driving circuit layer 2 and the light emitting functional layer 3 are fabricated. The influence of the low temperature characteristics of the light emitting device 31 can improve the touch precision of the display module 100 .
  • FIG. 5 is a schematic cross-sectional structure diagram of the touch function layer 20 in FIG. 4 .
  • the touch function layer 20 adopts mutual capacitive touch.
  • the touch function layer 20 includes driving electrodes 201 and sensing electrodes 203, and the driving electrodes 201 and the sensing electrodes 203 are arranged in different layers.
  • An insulating layer 202 is provided between 201 and the sensing electrode 203 .
  • the present application is not limited to this, and the driving electrodes 201 and the sensing electrodes 203 of the touch function layer 20 of the present application may also be arranged in the same layer, and the overlapping parts of the driving electrodes 201 and the sensing electrodes 203 are bridged by a bridge layer, or the
  • the touch function layer 20 can also adopt self-capacitive touch, and when the incell touch solution is adopted, the touch function layer 20 can also be disposed between the driving circuit layer 2 and the light emitting function layer 3 , Alternatively, an oncell touch solution can also be used, and the touch function layer 20 is disposed on the side of the ultra-thin glass 1 away from the driving circuit layer 2 .
  • the display module 100 may not be provided with the touch function layer 20, and the present application is not limited to this.
  • the driving circuit layer 2 is disposed on the touch function layer 20.
  • a buffer layer (not shown) is also arranged between the glasses 1, and the buffer layer can prevent undesired impurities or contaminants (such as moisture, oxygen, etc.) from diffusing from the ultra-thin glass 1 to the contaminants, while still providing a flat top surface.
  • the driving circuit layer 2 includes an active layer 21 , a gate insulating layer 22 , a gate 23 , an interlayer insulating layer 24 , a source electrode 251 and a drain electrode 252 , a gate insulating layer 22 , a gate electrode 23 , a source electrode 251 and a drain electrode 252 .
  • the chemical layer 26 , the pixel electrode 27 and the pixel definition layer 28 are formed.
  • the active layer 21 includes a channel region 211 and a source doped region 212 and a drain doped region 213 located on both sides of the channel region 211 , wherein the channel region 211 corresponds to the gate 23 set up.
  • the source electrode 251 and the drain electrode 252 are respectively connected to the source doped region 212 and the drain doped region 213 of the active layer 21 through via holes of the interlayer insulating layer 24 .
  • the pixel electrode 27 is connected to the source electrode 251 or the drain electrode 252 through the via hole of the planarization layer 26 . As shown in FIG. 4 , the pixel electrode 27 passes through the via hole of the planarization layer 26 .
  • the pixel definition layer 28 is disposed on the pixel electrode 27 and the planarization layer 26 , and the pixel definition layer 28 is patterned to form a pixel opening, and the pixel opening exposes a part of the pixel electrode 27 to The setting area of the light-emitting device is defined.
  • the pixel electrode 27 adopts a transparent electrode, and the pixel electrode 27 can be made of, for example, indium tin oxide (ITO), indium zinc oxide (IZO) , ZnO or In2O3 and other transparent conductive materials.
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO in2O3
  • the material of the pixel electrode 27 is not limited thereto, and the pixel electrode 27 may be formed of various materials, and may also be formed in a single-layer or multi-layer structure.
  • the film structure of the driving circuit layer 2 is not limited to the top gate structure shown in FIG. 4 , and the film structure of the driving circuit layer 2 may also adopt a bottom gate structure or other etch barrier structure.
  • the light-emitting functional layer 3 is disposed on the driving circuit layer 2 , and the light-emitting functional layer 3 includes a light-emitting device 31 and a cathode 32 , and the light-emitting device 31 is printed in the pixel opening of the pixel definition layer 28 .
  • a light-emitting material is formed, and the cathode 32 covers the light-emitting device 31 and the pixel definition layer 28 .
  • the light-emitting device 31 emits light under the combined action of the driving circuit layer 2 and the cathode 32 , thereby realizing the pixel display of the display panel 10 .
  • the cathode 32 may be a transparent electrode or a reflective electrode.
  • the cathode 32 may include a metal with low work function (such as Li, Ca, LiF/Ca, LiF/Al, Al, etc.). , Ag, Mg or their combination) and a transparent conductive layer formed of ITO, IZO, ZnO or In2O3.
  • the cathode 32 is a reflective electrode, the cathode 32 may be formed of Li, Ca, LiF/Ca, LiF/Al, Al, Ag, Mg, or a combination thereof.
  • the cathode 32 is not limited to these structures and materials, so the cathode 32 may be modified into various forms. It can be understood that, by setting the cathode 32 as a reflective electrode, the utilization rate of the light emitted by the light-emitting device 31 can be further improved.
  • the light-emitting functional layer 3 may further include a hole injection layer (HIL) and a hole transport layer (HTL) disposed between the light-emitting device 31 and the pixel electrode 27 ; An electron injection layer (EIL) and an electron transport layer (ETL) between the device 31 and the cathode 32 .
  • HIL hole injection layer
  • HTL hole transport layer
  • EIL electron injection layer
  • ETL electron transport layer
  • the encapsulation layer 4 is disposed on the light-emitting functional layer 3, and the encapsulation layer 4 can be encapsulated by a thin film, and the thin film encapsulation can be a three-layer film consisting of a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.
  • the laminated structure or the laminated structure formed by stacking in sequence is used to protect the light-emitting device 31 of the light-emitting functional layer 3 and avoid the failure of the light-emitting device 31 caused by the invasion of water and oxygen.
  • the support structure 40 is disposed on the encapsulation layer 4 , and the support structure 40 includes a backplane 50 .
  • the backplane 50 is attached to the encapsulation layer 4 , that is, the backplane 50 is disposed on the non-light-emitting surface of the display panel 10 to support each film layer of the display panel 10 .
  • the support structure 40 may further include a laminated structure formed of foam, copper foil, and graphite (Graphite), etc. disposed on the backplane 50 .
  • the stacked structure can not only further support each film layer of the display panel 10 , but also play a role of buffering and heat dissipation for the display panel 10 .
  • a stainless steel film 60 can also be attached to the back plate 50, and the back plate 50 and the stainless steel film 60 together form the The support structure 40 of the display module 100 .
  • the stainless steel film 60 is attached to the side of the backplane 50 away from the encapsulation layer 4 by optical glue.
  • the material of the stainless steel film 60 includes hard materials such as stainless steel (such as SUS).
  • Stainless steel is a high-modulus material and is not easily deformed when subjected to force, which can well ensure the bending shape of the display module 100. And further structural reinforcement is performed on the back plate 50 .
  • the polarizer 30 is formed by using a transparent optical adhesive (Optically Clear Adhesive, OCA) is attached to the side of the ultra-thin glass 1 away from the touch function layer 20 .
  • the polarizer 30 is a circular polarizer, which can play the role of anti-reflection, preventing external light from entering the display module 100 and being reflected back by the metal film layer in the display panel, which affects the viewing effect and contrast.
  • the ultra-thin glass 1 of the display panel 10 is formed by thinning the substrate glass, and the ultra-thin glass 1 is used to replace the conventional PI flexible film layer, thereby eliminating the need for
  • the substrate glass and the PI flexible film layer are separated by the laser lift-off process, which avoids the high requirements of cleanliness and laser uniformity by the laser lift-off process, the difficulty in achieving large size, and the existence of foreign particles that cause the PI flexible film layer to break and many other problems. , which solves the problem that the existing flexible OLED display production process needs to use laser to peel off the substrate glass and the effect is not good.
  • the display module 101 of this embodiment adopts bottom emission, and due to the existence of the ultra-thin glass 1 formed by thinning the substrate glass, it is not necessary to attach the ultra-thin glass to the light-emitting surface as a cover plate, which avoids attaching the ultra-thin glass. Ultra-thin glass breaks during glass, resulting in serious yield loss and other problems.
  • FIG. 6 is a schematic diagram of a second cross-sectional structure of the display module provided by the embodiment of the present application.
  • the touch solution of the display module 101 adopts an external TP (touch panel, touch panel), that is, the touch panel 70 is directly externally mounted on the display panel 10 .
  • the display module 101 includes a display panel 10 , a touch panel 70 and a color filter layer 80 attached to the light-emitting side of the display panel 10 , and a backplane 50 attached to the non-light-emitting side of the display panel 10 . and stainless steel film 60.
  • the display panel 10 includes an ultra-thin glass 1, a driving circuit layer 2, a light-emitting function layer 3, and an encapsulation layer 4 stacked on the ultra-thin glass 1 in sequence, and the touch panel 70 is directly attached to the ultra-thin glass 1.
  • the thin glass 1 is away from the side of the driving circuit layer 2 .
  • the structure of the display module 101 of this embodiment is different from that of the display module 100 of the above-mentioned embodiment, and the same structure and functions corresponding to the structure will not be described again.
  • the display panel 10 does not need to be provided with a touch function layer, and the display panel 10 includes a driving circuit stacked on the ultra-thin glass 1 .
  • Layer 2 light-emitting functional layer 3 and encapsulation layer 4 .
  • a buffer layer (not shown) is also provided between the driving circuit layer 2 and the ultra-thin glass 1 .
  • the driving circuit layer 2 adopts a double gate structure.
  • the driving circuit layer 2 includes an active layer 21 , a first gate insulating layer 221 , a first gate insulating layer 221 , and a first gate insulating layer 221 , which are sequentially stacked on the ultra-thin glass 1 .
  • electrode 231, second gate insulating layer 222, second gate electrode 232, interlayer insulating layer 24, source and drain electrodes 251 and 252, planarization layer 26, pixel electrode 27 and pixel definition layer 28, the first gate A storage capacitor may be formed between the pole 231 and the second gate 232 .
  • the touch panel 70 can be attached to the light-emitting side of the display panel 10 through a transparent adhesive (eg, OCA adhesive), that is, directly attached to the side of the ultra-thin glass 1 away from the driving circuit layer 2 .
  • a transparent adhesive eg, OCA adhesive
  • the color filter layer 80 can be attached to the touch panel 70 through optical adhesive, and the color filter layer 80 can replace the function of the conventional polarizer, that is, the POL-less technology is used, the thickness of the conventional polarizer is thicker, and the This technology can not only reduce the thickness of the functional layer from more than 100 microns to less than 5 microns, but also improve the light extraction rate.
  • the color filter layer 80 is composed of red (Red), green (Green), blue (Blue) color resists and a black matrix (Black Matrix).
  • the R/G/B color resistances are responsible for the light output of the corresponding R/G/B light-emitting sub-pixel units respectively; while the black matrix is mainly responsible for preventing the light leakage of the panel and reducing the reflection of the panel.
  • the black matrix is mainly responsible for preventing the light leakage of the panel and reducing the reflection of the panel.
  • FIG. 7 is a schematic flowchart of a method for manufacturing a display module provided by an embodiment of the present application.
  • the preparation method of the display module comprises the following steps:
  • S301 Provide a display panel, the display panel includes a substrate glass, a driving circuit layer, a light-emitting functional layer, and an encapsulation layer;
  • FIGS. 8 to 14 are schematic diagrams of the structures of the film layers prepared in each step in the manufacturing process of the display panel 10 according to the embodiment of the present application.
  • the preparation process of the display panel 10 includes:
  • the touch function layer 20 is prepared on the substrate glass 6; specifically, a first buffer layer 51 is deposited on the substrate glass 6, and a driving electrode layer is deposited on the first buffer layer 51, and patterned
  • the driving electrode layer forms a driving electrode 201; an insulating layer 202 is deposited on the driving electrode 201 and the first buffer layer 51, and a sensing electrode layer is deposited on the insulating layer 202, and the sensing electrode layer is patterned to form a sensing electrode
  • the electrode 203 forms the touch function layer 20 as shown in FIG. 8 .
  • the materials of the driving electrodes 201 and the sensing electrodes 203 may include metals such as Al and Cu or transparent conductive materials such as ITO. When metals such as Al and Cu are used, the driving electrodes 201 and the sensing electrodes 203 can be made of Mesh-like patterned electrodes to facilitate the transmission of light.
  • a driving circuit layer 2 is prepared on the touch function layer 20 ; specifically, a second buffer layer 52 is deposited on the sensing electrode 203 and the insulating layer 202 , and a semiconductor is deposited on the second buffer layer 52 material, the semiconductor material is patterned to form a semiconductor pattern as the active layer 21, and the thickness of the active layer 21 may be 450 angstroms, but the present application is not limited thereto.
  • the active layer 21 includes a channel region 211 and a source doping region 212 and a drain doping region 213 located on both sides of the channel region 211 .
  • the source doping region 212 and the The drain doped region 213 may be formed by ion doping.
  • the semiconductor material includes low temperature polysilicon (Low Temperature Poly Silicon, LTPS), aluminum zinc oxide (AlZnO), aluminum zinc tin oxide (AlZnSnO), gallium zinc tin oxide (GaZnSnO), indium gallium oxide (InGaO), indium gallium zinc oxide (InGaZnO), Metal oxides such as indium tin zinc oxide (InSnZnO), indium zinc oxide (InZnO), hafnium indium zinc oxide (HfInZnO) or zirconium tin oxide (ZrSnO).
  • LTPS low temperature polysilicon
  • AlZnO aluminum zinc oxide
  • AlZnSnO aluminum zinc tin oxide
  • GaZnSnO gallium zinc tin oxide
  • InGaO indium gallium oxide
  • InGaZnO indium gallium zinc oxide
  • Metal oxides such as indium tin zinc oxide (InSnZnO), indium zinc oxide (InZnO),
  • first gate insulating layer 221 depositing a first gate insulating layer 221 on the active layer 21 and the second buffer layer 52, depositing a first gate layer on the first gate insulating layer 221, patterning the The first gate layer forms the first gate 231 .
  • a second gate insulating layer 222 is deposited on the first gate electrode 231 and the first gate insulating layer 221, and a second gate electrode layer is deposited on the second gate insulating layer 222.
  • the second gate electrode layer forms a second gate electrode 232 to form a film structure as shown in FIG. 10 .
  • gate scan lines may also be formed and other signal lines.
  • an interlayer insulating layer 24 is deposited on the second gate electrode 232 and the second gate insulating layer 222 , and the interlayer insulating layer 24 is patterned to form a plurality of first via holes 241 .
  • a via hole 241 penetrates through the interlayer insulating layer 24 , the second gate insulating layer 222 and the first gate insulating layer 221 to the active layer 21 .
  • a source and drain layer is deposited in the interlayer insulating layer 24 and the first via hole 241 , and the source and drain layers are patterned to form a source electrode 251 and a drain electrode 252 , the source electrode 251 and the drain electrode 252 respectively connect the source doped region and the drain doped region through the first via hole 241 to form the structure shown in FIG. 11 .
  • signal lines such as data lines and power supply lines are also formed.
  • a planarization layer 26 is deposited on the source electrode 251 , the drain electrode 252 and the interlayer insulating layer 24 , and the planarization layer 26 is patterned to form a plurality of second via holes 261 .
  • Two via holes 261 penetrate through the planarization layer 26 to expose the source electrode 251 or the drain electrode 252 .
  • a transparent conductive material such as indium tin oxide, is deposited in the planarization layer 26 and the second via hole 261, and the transparent conductive material is patterned to form a pixel electrode 27, and the pixel electrode 27 passes through the second via hole 261.
  • the hole 261 is connected to the drain electrode 252 to form the structure shown in FIG. 12 .
  • a pixel definition layer 28 is deposited on the pixel electrode 27 and the planarization layer 26, and the pixel definition layer 28 is patterned to form a pixel opening 281 to expose part of the pixel electrode 27, as shown in FIG. 13 . Show.
  • a light-emitting functional layer 3 is prepared on the driving circuit layer 2 ; specifically, a light-emitting material is evaporated in the pixel opening 281 to form the light-emitting device 31 .
  • Metal materials such as Al and other metals, are evaporated on the light emitting device 31 and the pixel definition layer 28 , the metal materials are patterned to form a reflective cathode 32 , and the light emitting functional layer structure shown in FIG. 13 is formed.
  • the cathode 32 of the light-emitting functional layer 3 is made as a reflective electrode, which can improve the utilization rate of light.
  • the light-emitting functional layer 3 may further include a hole injection layer and a hole transport layer disposed between the light-emitting device 31 and the pixel electrode 27 ; and a hole-injection layer and a hole transport layer disposed between the light-emitting device 31 and the cathode 32 between the electron injection layer, the electron transport layer.
  • An encapsulation layer 4 is prepared on the light-emitting functional layer 3 to form a film layer structure as shown in FIG. 14;
  • the organic encapsulation layer and the second inorganic encapsulation layer three-layer thin films are stacked in sequence to form a laminate structure or a multi-layer laminate structure, which is used to protect the light-emitting device 31 of the light-emitting functional layer 3 and prevent the light-emitting device 31 caused by the invasion of water and oxygen. invalid.
  • the backplane 50 is attached to the side of the encapsulation layer 4 away from the light-emitting functional layer 3 by using optical glue (such as OCA, etc.) to form the film layer structure shown in FIG. 15 .
  • the backplane 50 can support each film layer of the display panel 10 .
  • S303 Perform a thinning process on the substrate glass 6, and thin the substrate glass 6 to a preset thickness to form an ultra-thin glass 1;
  • the steps of thinning the substrate glass 6 to a preset thickness to form the ultra-thin glass 1 include:
  • a protective film 80 is attached on the backplane 50 , and the protective film 80 covers the backplane 50 and the sidewalls of the driving circuit layer 2 , the light-emitting functional layer 3 and the encapsulation layer 4 , as shown in FIG. 16 .
  • the protective film 80 also covers the sidewall of the touch functional layer 20; the protective film 80 needs to have certain adhesiveness and can be attached to the backplane 50 and the side walls of the touch functional layer 20, the driving circuit layer 2, the light emitting functional layer 3 and the encapsulation layer 4; and the protective film 80 It also needs to be resistant to etching liquids such as acid liquids to prevent etching liquids such as acid liquids from eroding the display panel and causing display failure.
  • the material of the protective film 80 can be selected from PET (Poly ethylene terephthalate, polyethylene terephthalate) and other protective films, the PET protective film has good chemical resistance, low water absorption, resistance to weak acids and organic solvents and other properties.
  • the substrate glass 6 is placed in an etching solution of a preset concentration; specifically, the etching solution includes an acid etching solution, etc., and the acid etching solution can be hydrofluoric acid (HF), using a hydrofluoric acid chemical solution Based on the principle that it can chemically react with silicon dioxide (SiO 2 ) on the glass surface and dissolve it, the substrate glass 6 is etched to reduce the thickness of the substrate glass 6 .
  • the etching solution includes an acid etching solution, etc.
  • the acid etching solution can be hydrofluoric acid (HF), using a hydrofluoric acid chemical solution Based on the principle that it can chemically react with silicon dioxide (SiO 2 ) on the glass surface and dissolve it, the substrate glass 6 is etched to reduce the thickness of the substrate glass 6 .
  • HF hydrofluoric acid
  • the substrate glass 6 is thinned to a preset thickness to form an ultra-thin glass 1, and the ultra-thin glass 1 is taken out, as shown in FIG. 17;
  • the set concentration can be set according to the preset thickness to which the substrate glass 6 is to be thinned, wherein the preset thickness ranges from 30 microns to 60 microns.
  • the ultra-thin glass 1 is cleaned, and the protective film 80 is removed to form the structure shown in FIG. 18 . Specifically, after the ultra-thin glass 1 is taken out from the etching solution, the ultra-thin glass 1 is cleaned to prevent the etching solution from remaining on the ultra-thin glass 1 .
  • the step of thinning the substrate glass 6 to a preset thickness to form the ultra-thin glass 1 may also be implemented in the following manner:
  • the substrate glass 6 is thinned to a preset thickness by physical grinding to form an ultra-thin glass 1 , and a convex-concave structure is formed on the surface of the ultra-thin glass 1 .
  • the physical grinding method includes polishing with mechanical equipment, by using polishing powder and pure water to form a processing medium of polishing liquid, and flowing between the machine tray and the substrate glass 6 under a certain pressure, using the machine The operation performs relative motion, so that the hard abrasive particles directly contact the surface of the substrate glass 6 to cut the thickness of the surface of the substrate glass 6 .
  • a convex-concave structure can be formed on the surface of the ultra-thin glass 1 by controlling the grinding process, and the convex-concave structure can increase the contact area between the component to be attached (such as a polarizer) and the ultra-thin glass 1, increasing adhesion between the two.
  • the step of thinning the substrate glass 6 to a preset thickness to form the ultra-thin glass 1 may also be implemented in the following manner:
  • the substrate glass 6 is thinned to a predetermined thickness by plasma etching to form an ultra-thin glass 1 , and a convex-concave structure is formed on the surface of the ultra-thin glass 1 .
  • a stainless steel film 60 is attached on the back plate 50 to form the following: The structure shown in FIG. 19 .
  • the stainless steel film 60 is attached to the side of the backplane 50 away from the encapsulation layer 4 through transparent optical adhesive.
  • the material of the stainless steel film 60 includes hard materials such as stainless steel (such as SUS).
  • Stainless steel is a high-modulus material that is not easily deformed when subjected to force, which can well ensure the bending shape of the display module.
  • a laminated structure formed of foam, copper foil, and graphite (Graphite) can also be arranged.
  • the stacked structure can not only further support each film layer of the display panel 10 , but also play a role of buffering and heat dissipation for the display panel 10 .
  • S304 Attach a polarizer 30 under the ultra-thin glass 1 to form a structure as shown in FIG. 20 .
  • the difference from the method for preparing the display module in the above-mentioned embodiment is that the touch function layer 20 is not integrated on the display panel 10, and the touch panel needs to be attached to the display module to realize the touch function.
  • the step of attaching the polarizer 30 under the ultra-thin glass 1 includes: attaching a touch panel under the ultra-thin glass 1 ; and attaching the polarizer 30 under the touch panel using optical glue.
  • preparation method of the display module of the present application is only described in detail by taking the preparation of the display module of one of the above-mentioned embodiments as an example, and the present application is not limited to this.
  • the preparation method of the display module of the present application is also applicable to the preparation of the above-mentioned display module. Any display module in the embodiment will not be repeated here.
  • a display device is provided, and the display device includes the display module of one of the above-mentioned embodiments.
  • the present application provides a display module, a preparation method and a display device.
  • the method for preparing a display module includes providing a display panel, the display panel comprising a substrate glass, a driving circuit layer, a light-emitting functional layer and an encapsulation layer; attaching a back plate on the encapsulation layer; In the thinning process, the substrate glass is thinned to a predetermined thickness to form an ultra-thin glass. Ultra-thin glass is obtained by processing the substrate glass, and replaces the conventional PI flexible film layer to support the panel, so that the laser peeling process is no longer required to separate the substrate glass and the PI flexible film layer, which avoids the use of laser peeling.
  • the laser uniformity requirements are high, it is difficult to achieve large size, and there are many problems such as the rupture of the PI flexible film layer due to the presence of foreign particles, which solves the problem that the existing flexible OLED display production process needs to use laser to peel off the substrate glass and the effect is not good.
  • the display module of the present application adopts bottom emission, due to the existence of the ultra-thin glass formed by thinning the substrate glass, it is not necessary to attach the ultra-thin glass as a cover plate on the light-emitting surface separately, which avoids the occurrence of ultra-thin glass when attaching the ultra-thin glass. Ultra-thin glass is broken, resulting in serious yield loss and other problems.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请提供一种显示模组、制备方法以及显示装置。显示模组制备方法中通过对显示面板的衬底玻璃进行减薄处理，将衬底玻璃减薄至预设厚度形成超薄玻璃，并取代常规的PI柔性膜层支撑面板，进而不需要再采用激光剥离工艺使衬底玻璃和PI柔性膜层分开，以解决现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题。

Description

显示模组、制备方法以及显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种显示模组、制备方法以及显示装置。
 背景技术
柔性有机发光二极管(Organic Light Emitting Diode，OLED)显示屏具有主动发光、可视角度大，色域宽、亮度高、响应速度快、低功耗，以及结构上可弯曲及可折叠等优点，越来越受到市场的欢迎。利用柔性OLED显示屏可弯曲可折叠的特性，可以制备多种形态的折叠显示装置，便于出门携带以及存放。
随着柔性OLED显示屏制造技术日趋发展成熟，目前柔性OLED显示屏的制作工艺一般可以包括：以衬底玻璃为衬底，在衬底玻璃上涂布PI（Polyimide，聚酰亚胺）柔性膜层，然后在PI柔性膜层上制作TFT（Thin Film Transistor，薄膜晶体管）阵列和顶发射OLED器件，顶发射器件的像素阳极采用反射阳极，阴极采用透明阴极，所以光线向上发射。最后进行模组制程(Module)，在模组制程中，先进行绑定（bonding）工艺，然后用激光剥离（Laser Lift Off，LLO）工艺将衬底玻璃与PI柔性膜层分开。然而激光剥离工艺对洁净度以及激光均匀性要求都很高，并且很难实现大尺寸，一旦有异物颗粒（particle）落入将使PI柔性膜层破裂进而导致柔性OLED显示屏失效。
因此，现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题需要解决。
 技术问题
本申请提供一种显示模组、制备方法以及显示装置，以解决现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种显示模组，其包括层叠设置在超薄玻璃上的驱动电路层、发光功能层、封装层以及支撑结构。所述驱动电路层设置于所述超薄玻璃的一侧。所述发光功能层设置于所述驱动电路层远离所述超薄玻璃的一侧。所述封装层设置于所述发光功能层远离所述驱动电路层的一侧。所述支撑结构设置于所述封装层远离所述发光功能层的一侧。
在本申请实施例提供的显示模组中，所述支撑结构包括背板。
在本申请实施例提供的显示模组中，所述支撑结构包括背板和不锈钢薄膜，所述背板贴附于所述封装层上，所述不锈钢薄膜贴附于所述背板上。
在本申请实施例提供的显示模组中，还包括偏光片，所述偏光片设置于所述超薄玻璃远离所述驱动电路层的一侧。
在本申请实施例提供的显示模组中，还包括彩膜层，所述彩膜层设置于所述超薄玻璃远离所述驱动电路层的一侧。
在本申请实施例提供的显示模组中，还包括触控功能层，所述触控功能层设置于所述超薄玻璃与所述驱动电路层之间。
在本申请实施例提供的显示模组中，还包括触控面板，所述触控面板贴附于所述超薄玻璃远离所述驱动电路层的一侧。
在本申请实施例提供的显示模组中，所述超薄玻璃的厚度范围为30微米至60微米。
本申请实施例还提供一种显示模组制备方法，其包括：提供显示面板，所述显示面板包括衬底玻璃、驱动电路层、发光功能层以及封装层；在所述封装层上贴附背板；对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃；在所述超薄玻璃下方贴附偏光片。
在本申请实施例提供的显示模组制备方法中，所述在所述超薄玻璃下方贴附偏光片的步骤，包括：在所述超薄玻璃下方贴附触控面板；使用光学胶将所述偏光片贴附在所述触控面板下方。
在本申请实施例提供的显示模组制备方法中，所述显示面板还包括位于所述衬底玻璃和所述驱动电路层之间的触控功能层，所述在所述超薄玻璃下方贴附偏光片的步骤，包括：使用光学胶将所述偏光片直接贴附在所述超薄玻璃下方。
在本申请实施例提供的显示模组制备方法中，所述预设厚度的范围为30微米至60微米。
在本申请实施例提供的显示模组制备方法中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃之后，还包括：在所述背板上方贴附不锈钢薄膜。
在本申请实施例提供的显示模组制备方法中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：在所述背板上贴附保护膜，所述保护膜包覆所述背板以及所述驱动电路层、所述发光功能层及所述封装层的侧壁；将所述衬底玻璃置于预设浓度的蚀刻液中；在预设时长后，所述衬底玻璃减薄至预设厚度形成超薄玻璃，取出所述超薄玻璃；清洗所述超薄玻璃，并去除所述保护膜。
在本申请实施例提供的显示模组制备方法中，所述蚀刻液包括酸性蚀刻液。
在本申请实施例提供的显示模组制备方法中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：通过物理研磨的方式把所述衬底玻璃减薄至预设厚度形成超薄玻璃，并使所述超薄玻璃表面形成凸凹结构。
在本申请实施例提供的显示模组制备方法中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：通过等离子蚀刻方式把所述衬底玻璃减薄至预设厚度形成超薄玻璃，并使所述超薄玻璃表面形成凸凹结构。
本申请实施例还提供一种显示装置，其包括显示模组，所述显示模组包括层叠设置在超薄玻璃上的驱动电路层、发光功能层、封装层以及支撑结构。所述驱动电路层设置于所述超薄玻璃的一侧。所述发光功能层设置于所述驱动电路层远离所述超薄玻璃的一侧。所述封装层设置于所述发光功能层远离所述驱动电路层的一侧。所述支撑结构设置于所述封装层远离所述发光功能层的一侧。
在本申请实施例提供的显示装置中，所述显示模组还包括触控功能层，所述触控功能层设置于所述超薄玻璃与所述驱动电路层之间。
在本申请实施例提供的显示装置中，所述显示模组还包括触控面板，所述触控面板贴附于所述超薄玻璃远离所述驱动电路层的一侧。
 有益效果
本申请提供的显示模组及其制备方法以及显示装置直接在衬底玻璃上制作驱动电路层和发光功能层，然后对衬底玻璃进行减薄处理形成超薄玻璃，通过处理衬底玻璃得到超薄玻璃，并取代常规的PI柔性膜层支撑面板，进而不需要再采用激光剥离工艺使衬底玻璃和PI柔性膜层分开，避免了采用激光剥离工艺对洁净度和激光均匀性要求高，难以实现大尺寸，以及存在异物颗粒导致PI柔性膜层破裂等诸多问题，解决了现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题。同时本申请的显示模组采用底发射时，因减薄衬底玻璃形成的超薄玻璃的存在，不需要单独在出光面贴附超薄玻璃做盖板，避免了贴附超薄玻璃时发生超薄玻璃破裂，致使良率损失严重等问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的柔性显示面板的第一种剖面结构示意图。
图2为本申请实施例提供的柔性显示面板的第二种剖面结构示意图。
图3为本申请实施例提供的显示模组的第一种剖面结构示意图。
图4为本申请实施例提供的显示面板的剖面结构示意图。
图5为图4中触控功能层的剖面结构示意图。
图6为本申请实施例提供的显示模组的第二种剖面结构示意图。
图7为本申请实施例提供的显示模组制备方法流程示意图。
图8至图20为本申请实施例提供的显示模组制备方法中各步骤制得的膜层结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。在附图中，为了清晰理解和便于描述，夸大了一些层和区域的厚度。即附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。
请参照图1，图1为本申请实施例提供的柔性显示面板的第一种剖面结构示意图。所述柔性显示面板11包括超薄玻璃（Ultra Thin Glass，UTG）1、驱动电路层2、发光功能层3以及封装层4。驱动电路层2设置于所述超薄玻璃1的一侧；发光功能层3设置于所述驱动电路层2远离所述超薄玻璃1的一侧；封装层4设置于所述发光功能层3远离所述驱动电路层2的一侧。其中，所述驱动电路层2用于驱动所述发光功能层3发光，为所述柔性显示面板11显示提供像素；所述封装层4用于保护所述发光功能层3的发光器件，避免水氧入侵导致发光器件失效。所述超薄玻璃1的厚度范围为30微米至60微米。
所述超薄玻璃1的厚度很薄，具有可弯折、可卷曲且不会碎裂的特性，以所述超薄玻璃1做衬底基板，除了能够支撑所述柔性显示面板11的各功能膜层（包括驱动电路层2、发光功能层3以及封装层4等），还可使所述柔性显示面板11能够弯折或卷曲，同时所述超薄玻璃1的高模量特性，能够减缓所述柔性显示面板11在弯折或卷曲时各功能膜层所受的应力。
需要说明的是，所述超薄玻璃1上的各功能膜层是先制作在常规的衬底玻璃上，各功能膜层制作完成后，通过减薄工艺把常规的衬底玻璃减薄至预设厚度形成所述超薄玻璃1，所述预设厚度即为上述所述超薄玻璃1的厚度范围。
在本实施例的所述柔性显示面板11中，通过处理衬底玻璃得到超薄玻璃1，并取代常规的PI柔性膜层支撑面板，进而不需要再采用激光剥离工艺使衬底玻璃和PI柔性膜层分开，避免了采用激光剥离工艺对洁净度和激光均匀性要求高，难以实现大尺寸，以及存在异物颗粒导致PI柔性膜层破裂等诸多问题，解决了现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题。
在一种实施例中，请参照图2，图2为本申请实施例提供的柔性显示面板的第二种剖面结构示意图。与上述实施例不同的是，所述柔性显示面板11’还包括触控功能层20，所述触控功能层20设置于所述超薄玻璃1和所述驱动电路层2之间，所述触控功能层20采用incell触控方案。其他说明请参照上述实施例，在此不再赘述，且对于所述柔性显示面板各功能膜层的具体结构及作用将在下文中具体阐述。
请结合参照图3和图4，图3为本申请实施例提供的显示模组的第一种剖面结构示意图；图4为本申请实施例提供的显示面板的剖面结构示意图。所述显示模组100包括显示面板10、设置于所述显示面板10出光侧的偏光片30、贴附于所述显示面板10非出光侧的支撑结构40，所述显示模组100采用底发射。所述显示面板10包括上述实施例中的任一所述柔性显示面板，具体地，所述显示面板10包括超薄玻璃1、依次层叠设置在所述超薄玻璃1上的触控功能层20、驱动电路层2、发光功能层3、封装层4，其中所述超薄玻璃1的厚度范围为30微米至60微米；所述显示面板10的出光侧也即面向所述发光功能层3出光方向的一侧。
下面将具体说明所述显示模组100的显示面板10以及贴附在所述显示面板10上的各构件的结构及功能：
请继续参照图4，所述触控功能层20设置于所述超薄玻璃1上，所述触控功能层20采用incell触控方案，直接把触控功能层20制作在所述显示面板10的所述超薄玻璃1上，以此可以减薄所述显示面板10的厚度，提高所述显示面板10的集成度。同时把触控功能层20先制作在所述超薄玻璃1上，然后再制作驱动电路层2和发光功能层3，可以采用高温制程制备触控功能层20，避免受所述发光功能层3的发光器件31低温特性的影响，能够提高显示模组100的触控精度。
具体地，请参照图5，图5为图4中触控功能层20的剖面结构示意图。所述触控功能层20采用互电容式触控，所述触控功能层20包括驱动电极201和感应电极203，且所述驱动电极201和所述感应电极203不同层设置，所述驱动电极201和所述感应电极203之间设置有绝缘层202。当然的，本申请不限于此，本申请的触控功能层20的驱动电极201和感应电极203也可以同层设置，驱动电极201和感应电极203交叠的部分通过桥接层桥接，或者所述触控功能层20也可采用自电容式触控，而且在采用incell触控方案时，所述触控功能层20也可设置在所述驱动电路层2和所述发光功能层3之间，或者也可以采用oncell触控方案，把所述触控功能层20设置在所述超薄玻璃1远离所述驱动电路层2的一侧。当然的，所述显示模组100也可以不设置所述触控功能层20，本申请不以此为限。
所述驱动电路层2设置于所述触控功能层20上，当然的，所述驱动电路层2与所述触控功能层20之间、以及所述触控功能层20与所述超薄玻璃1之间还设置有缓冲层（图未示），所述缓冲层可以防止不期望的杂质或污染物（例如湿气、氧气等）从所述超薄玻璃1扩散至可能因这些杂质或污染物而受损的器件中，同时还可以提供平坦的顶表面。所述驱动电路层2包括依次层叠设置在所述触控功能层20上的有源层21、栅极绝缘层22、栅极23、层间绝缘层24、源极251和漏极252、平坦化层26、像素电极27及像素定义层28。所述有源层21包括沟道区211以及位于所述沟道区211两侧的源极掺杂区212和漏极掺杂区213，其中所述沟道区211与所述栅极23对应设置。所述源极251和所述漏极252分别通过所述层间绝缘层24的过孔与所述有源层21的所述源极掺杂区212和所述漏极掺杂区213连接。所述像素电极27通过所述平坦化层26的过孔与所述源极251或所述漏极252连接，如图4示出的所述像素电极27通过所述平坦化层26的过孔与所述漏极252连接。所述像素定义层28设置于所述像素电极27以及所述平坦化层26上，且所述像素定义层28图案化形成有像素开口，所述像素开口裸露出部分所述像素电极27，以定义出发光器件的设置区域。
因所述显示模组100采用底发射，为了提高光线的透过率，所述像素电极27采用透明电极，则所述像素电极27可以由例如氧化铟锡(ITO)、氧化铟锌(IZO)、ZnO或In2O3等透明导电材料形成。然而，所述像素电极27的材料不限于此，所述像素电极27可以由各种材料形成，并且也可以形成为单层或多层结构。
需要说明的是，所述驱动电路层2的膜层结构不限于图4示出的顶栅结构，所述驱动电路层2的膜层结构也可采用底栅结构或其他刻蚀阻挡型结构。
所述发光功能层3设置于所述驱动电路层2上，所述发光功能层3包括发光器件31、阴极32，所述发光器件31是由打印在所述像素定义层28的像素开口内的发光材料形成，所述阴极32覆盖所述发光器件31以及所述像素定义层28。所述发光器件31在所述驱动电路层2和所述阴极32的共同作用下发光，进而实现显示面板10的像素显示。所述阴极32可以是透明电极或反射电极，如果所述阴极32是透明电极，则所述阴极32可以包括由逸出功低的金属(如Li、Ca、LiF/Ca、LiF/Al、 Al、Ag、Mg或它们的组合)形成的层以及由ITO、IZO、ZnO或In2O3形成的透明导电层。如果所述阴极32是反射电极，则所述阴极32可以由Li、Ca、LiF/Ca、LiF/Al、Al、Ag、Mg或它们的组合形成。然而，所述阴极32不限于这些结构和材料，故可以将所述阴极32修改成各种形式。可以理解的是，把所述阴极32设置成反射电极，可进一步提高发光器件31发出光的利用率。
当然的，所述发光功能层3还可包括设置于所述发光器件31与所述像素电极27之间的空穴注入层(HIL)、空穴传输层(HTL)；以及设置于所述发光器件31与所述阴极32之间的电子注入层(EIL)、电子传输层(ETL)。
所述封装层4设置于所述发光功能层3上，所述封装层4可以采用薄膜封装，所述薄膜封装可以为由第一无机封装层、有机封装层、第二无机封装层三层薄膜依次层叠形成的叠层结构或更多层的叠层结构，用于保护所述发光功能层3的发光器件31，避免水氧入侵导致发光器件31失效。
请继续结合参照图3和图4，所述支撑结构40设置在所述封装层4上，所述支撑结构40包括背板50。所述背板50贴附在所述封装层4上，也即所述背板50设置在所述显示面板10的非出光面，用于支撑所述显示面板10的各膜层。当然地，所述支撑结构40还可包括设置于所述背板50上的泡棉（Foam）、铜箔（Copper）、石墨（Graphite）等形成的叠层结构。所述叠层结构除了能够进一步支撑所述显示面板10的各膜层，还能对所述显示面板10起到缓冲、散热的作用。
可以理解的，为了更好的实现所述显示模组100的弯折性能，还可在所述背板50上贴附不锈钢薄膜60，所述背板50和所述不锈钢薄膜60共同形成所述显示模组100的支撑结构40。所述不锈钢薄膜60通过光学胶贴附在所述背板50远离所述封装层4的一侧。所述不锈钢薄膜60的材料包括不锈钢（如SUS）等硬性材料，不锈钢是一种高模量材料，在受力时不易发生形变，可以很好的保证所述显示模组100的弯折形态，且进一步对所述背板50进行结构补强。
所述偏光片30通过使用透明光学胶（Optically Clear Adhesive，OCA）贴附于所述超薄玻璃1远离所述触控功能层20的一侧。所述偏光片30为圆偏光片，能够起到抗反射的作用，避免外界光线进入显示模组100后被显示面板内的金属膜层反射回来，影响观看效果和对比度。
在本实施例的所述显示模组100中，所述显示面板10的超薄玻璃1通过对衬底玻璃进行减薄处理形成，以超薄玻璃1取代常规的PI柔性膜层，进而不需要再采用激光剥离工艺使衬底玻璃和PI柔性膜层分开，避免了采用激光剥离工艺对洁净度和激光均匀性要求高，难以实现大尺寸，以及存在异物颗粒导致PI柔性膜层破裂等诸多问题，解决了现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题。同时本实施例的显示模组101采用底发射，且因减薄衬底玻璃形成的超薄玻璃1的存在，不需要单独在出光面贴附超薄玻璃做盖板，避免了贴附超薄玻璃时发生超薄玻璃破裂，致使良率损失严重等问题。
在一种实施例中，请参照图6，图6为本申请实施例提供的显示模组的第二种剖面结构示意图。与上述实施例不同的是，显示模组101的触控方案采用外挂TP（touch panel，触控面板），即把触控面板70直接外挂在所述显示面板10上。具体地，所述显示模组101包括显示面板10、贴附于所述显示面板10出光侧的触控面板70以及彩膜层80、贴附于所述显示面板10非出光侧的背板50和不锈钢薄膜60。所述显示面板10包括超薄玻璃1、依次层叠设置在所述超薄玻璃1上的驱动电路层2、发光功能层3、封装层4，所述触控面板70直接贴附在所述超薄玻璃1远离所述驱动电路层2的一侧。
下面将具体说明本实施例的显示模组101相较于上述实施例的显示模组100结构不同的地方，相同的结构及结构对应的功能不再赘述。
请继续参照图6，显示模组101因采用外挂TP触控方案，所述显示面板10内不需要再设置触控功能层，则所述显示面板10包括层叠设置在超薄玻璃1上驱动电路层2、发光功能层3以及封装层4，当然的，所述驱动电路层2与所述超薄玻璃1之间还设置有缓冲层（图未示）。同时所述驱动电路层2采用双栅结构，具体地，所述驱动电路层2包括依次层叠设置在所述超薄玻璃1上的有源层21、第一栅极绝缘层221、第一栅极231、第二栅极绝缘层222、第二栅极232、层间绝缘层24、源极251和漏极252、平坦化层26、像素电极27及像素定义层28，所述第一栅极231和所述第二栅极232之间可形成存储电容。
触控面板70可通过透明胶（如OCA胶）贴附在所述显示面板10的出光侧，也即直接贴附在所述超薄玻璃1远离所述驱动电路层2的一侧。
彩膜层80可通过光学胶贴附在所述触控面板70上，所述彩膜层80能够替代常规偏光片的功能，也即采用POL-less技术，常规偏光片的厚度较厚，而该技术不仅能将功能层的厚度从大于100微米降低至小于5微米，还能够提高出光率。彩膜层80由红（Red）、绿(Green)、蓝（Blue）色阻以及黑色矩阵（Black Matrix）组成。在OLED显示面板中，R/G/B色阻分别承担着对应的R/G/B发光子像素单元的出光；而黑色矩阵则主要承担着防止面板的漏光与降低面板的反射的作用。其他说明请参照上述实施例，在此不再赘述。
在一种实施例中，请参照图7，图7为本申请实施例提供的显示模组制备方法的流程示意图。所述显示模组制备方法包括以下步骤：
S301：提供显示面板，所述显示面板包括衬底玻璃、驱动电路层、发光功能层以及封装层；
具体地，请参照图8至图14，图8至图14为本申请实施例提供的显示面板10制备过程中各步骤制得的膜层结构示意图。所述显示面板10的制备过程包括：
提供衬底玻璃6，对所述衬底玻璃6进行清洗、干燥等处理；
在所述衬底玻璃6上制备触控功能层20；具体地，在所述衬底玻璃6上沉积第一缓冲层51，并在所述第一缓冲层51上沉积驱动电极层，图案化驱动电极层形成驱动电极201；在所述驱动电极201以及所述第一缓冲层51上沉积绝缘层202，并在所述绝缘层202上沉积感应电极层，图案化所述感应电极层形成感应电极203，形成如图8所示的触控功能层20。其中所述驱动电极201和所述感应电极203的材料均可包括Al、Cu等金属或ITO等透明导电材料，当采用Al、Cu等金属时，可把驱动电极201和感应电极203均制作成网格（mesh）状的图案电极，以利于光线的透过。
在所述触控功能层20上制备驱动电路层2；具体地，在所述感应电极203以及所述绝缘层202上沉积第二缓冲层52，并在所述第二缓冲层52上沉积半导体材料，图案化所述半导体材料形成半导体图案作为有源层21，所述有源层21的厚度可以为450埃，但本申请不限于此。如图9所示，所述有源层21包括沟道区211以及位于沟道区211两侧的源极掺杂区212和漏极掺杂区213，所述源极掺杂区212和所述漏极掺杂区213可通过离子掺杂形成。所述半导体材料包括低温多晶硅（Low Temperature Poly Silicon，LTPS）、铝锌氧化物(AlZnO)、铝锌锡氧化物(AlZnSnO)、镓锌锡氧化物(GaZnSnO)、铟镓氧化物(InGaO)、铟镓锌氧化物 (InGaZnO)、铟锡锌氧化物(InSnZnO)、铟锌氧化物(InZnO)、铪铟锌氧化物(HfInZnO)或锆锡氧化物(ZrSnO)等金属氧化物。
进一步地，在所述有源层21以及所述第二缓冲层52上沉积第一栅极绝缘层221，并在所述第一栅极绝缘层221上沉积第一栅极层，图案化所述第一栅极层形成第一栅极231。在所述第一栅极231以及所述第一栅极绝缘层221上沉积第二栅极绝缘层222，并在所述第二栅极绝缘层222上沉积第二栅极层，图案化所述第二栅极层形成第二栅极232，形成如图10所示的膜层结构。当然的，在图案化所述第一栅极层和所述第二栅极层时，除了形成有所述第一栅极231和所述第二栅极232外，还可形成栅极扫描线等其他信号线。
进一步地，在所述第二栅极232以及所述第二栅极绝缘层222上沉积层间绝缘层24，图案化所述层间绝缘层24形成多个第一过孔241，所述第一过孔241贯穿所述层间绝缘层24、所述第二栅极绝缘层222以及所述第一栅极绝缘层221至所述有源层21。在所述层间绝缘层24以及所述第一过孔241内沉积源漏极层，图案化所述源漏极层形成源极251和漏极252，所述源极251和所述漏极252分别通过所述第一过孔241连接所述源极掺杂区和所述漏极掺杂区，形成如图11所示的结构。当然的，在图案化所述源漏极层时，除了形成有所述源极251和所述漏极252外，还形成有数据线、电源线等信号线。
进一步地，在所述源极251、所述漏极252以及所述层间绝缘层24上沉积平坦化层26，图案化所述平坦化层26形成多个第二过孔261，所述第二过孔261贯穿所述平坦化层26以裸露出所述源极251或所述漏极252。在所述平坦化层26以及所述第二过孔261内沉积透明导电材料，如氧化铟锡等，图案化所述透明导电材料形成像素电极27，所述像素电极27通过所述第二过孔261与所述漏极252连接，形成如图12所示的结构。
进一步地，在所述像素电极27以及所述平坦化层26上沉积像素定义层28，图案化所述像素定义层28形成像素开口281，以裸露出部分所述像素电极27，如图13所示。
在所述驱动电路层2上制备发光功能层3；具体地，在所述像素开口281内蒸镀发光材料以形成发光器件31。在所述发光器件31以及所述像素定义层28上蒸镀金属材料，如Al等金属，图案化所述金属材料形成反射阴极32，形成如图13所示的发光功能层结构。其中，所述发光功能层3的阴极32制作成反射电极，能够提高光线的利用率。当然的，所述发光功能层3还可包括设置于所述发光器件31与所述像素电极27之间的空穴注入层、空穴传输层；以及设置于所述发光器件31与所述阴极32之间的电子注入层、电子传输层。
在所述发光功能层3上制备封装层4，形成如图14所示的膜层结构；具体地，所述封装层4可以采用薄膜封装，所述薄膜封装可以为由第一无机封装层、有机封装层、第二无机封装层三层薄膜依次层叠形成的叠层结构或更多层的叠层结构，用于保护所述发光功能层3的发光器件31，避免水氧入侵导致发光器件31失效。
S302：在所述封装层4上贴附背板50；
具体地，通过使用光学胶（如OCA等）把背板50贴附在所述封装层4远离所述发光功能层3的一侧，形成如图15所示的膜层结构。所述背板50能够支撑所述显示面板10的各膜层。
S303：对所述衬底玻璃6进行减薄处理，将所述衬底玻璃6减薄至预设厚度形成超薄玻璃1；
具体地，对所述衬底玻璃6进行减薄处理，将所述衬底玻璃6减薄至预设厚度形成超薄玻璃1的步骤，包括：
在所述背板50上贴附保护膜80，所述保护膜80包覆所述背板50以及所述驱动电路层2、发光功能层3及封装层4的侧壁，形成如图16所示的结构，可以理解的是，因所述触控功能层20也设置在衬底玻璃6上，故所述保护膜80也包覆所述触控功能层20的侧壁；所述保护膜80需具有一定粘附性，能够贴附在所述背板50以及所述触控功能层20、所述驱动电路层2、发光功能层3及封装层4的侧壁；且所述保护膜80还需耐酸液等蚀刻液，防止酸液等蚀刻液侵蚀所述显示面板造成显示失效。所述保护膜80的材料可选用PET（Poly ethylene terephthalate，聚对苯二甲酸乙二醇酯）等保护膜，所述PET保护膜具有抗化学药品稳定性好，吸水率低，耐弱酸和有机溶剂等性能。
将所述衬底玻璃6置于预设浓度的蚀刻液中；具体地，所述蚀刻液包括酸性蚀刻液等，所述酸性蚀刻液可以为氢氟酸（HF），利用氢氟酸化学溶液可与玻璃表面的二氧化硅（SiO2）进行化学反应而使其溶解的原理，对衬底玻璃6进行咬蚀而将衬底玻璃6厚度变薄。
在预设时长后，所述衬底玻璃6减薄至预设厚度形成超薄玻璃1，取出所述超薄玻璃1，如图17所示；具体地，所述预设时长以及所述预设浓度均可根据所述衬底玻璃6要减薄至的预设厚度来设置，其中所述预设厚度的范围为30微米至60微米。
清洗所述超薄玻璃1，并去除所述保护膜80，形成如图18所示的结构。具体地，从所述蚀刻液中取出所述超薄玻璃1后，对所述超薄玻璃1进行清洗，避免所述蚀刻液残留在所述超薄玻璃1上。
在一种实施例中，所述对所述衬底玻璃6进行减薄处理，将所述衬底玻璃6减薄至预设厚度形成超薄玻璃1的步骤，还可以通过如下方式实现：
通过物理研磨的方式把所述衬底玻璃6减薄至预设厚度形成超薄玻璃1，并使所述超薄玻璃1表面形成凸凹结构。具体地，物理研磨的方式包括采用机械设备抛光，通过使用抛光粉加纯水形成抛光液的加工介质，在一定的压力下流经机台盛盘与所述衬底玻璃6之间，借机台运转做相对运动，使硬质磨粒直接接触所述衬底玻璃6表面进而切削所述衬底玻璃6表面厚度。使用物理研磨方式时，可通过控制研磨工艺使所述超薄玻璃1表面形成凸凹结构，凸凹结构能够增大待贴附构件（如偏光片）与所述超薄玻璃1的接触面积，增大两者之间的粘着力。
在另一种实施例中，所述对所述衬底玻璃6进行减薄处理，将所述衬底玻璃6减薄至预设厚度形成超薄玻璃1的步骤，还可以通过如下方式实现：
通过等离子蚀刻方式把所述衬底玻璃6减薄至预设厚度形成超薄玻璃1，并使所述超薄玻璃1表面形成凸凹结构。
进一步地，对所述衬底玻璃6进行减薄处理，将所述衬底玻璃6减薄至预设厚度形成超薄玻璃1之后，在所述背板50上方贴附不锈钢薄膜60，形成如图19所示的结构。所述不锈钢薄膜60通过透明光学胶贴附在所述背板50远离所述封装层4的一侧。所述不锈钢薄膜60的材料包括不锈钢（如SUS）等硬性材料，不锈钢是一种高模量材料，在受力时不易发生形变，可以很好的保证所述显示模组的弯折形态。
当然地，在所述背板50和所述不锈钢薄膜60之间还可设置由泡棉（Foam）、铜箔（Copper）、石墨（Graphite）等形成的叠层结构。所述叠层结构除了能够进一步支撑所述显示面板10的各膜层，还能对所述显示面板10起到缓冲、散热的作用。
S304：在所述超薄玻璃1下方贴附偏光片30，形成如图20所示的结构。
在一种实施例中，与上述实施例中显示模组制备方法不同的是，显示面板10上没有集成触控功能层20，显示模组要实现触控功能需外挂触控面板，故在所述超薄玻璃1下方贴附偏光片30的步骤，包括：在所述超薄玻璃1下方贴附触控面板；并使用光学胶将所述偏光片30贴附在所述触控面板下方。
需要说明的是，本申请的显示模组制备方法仅以制备上述实施例其中之一的显示模组为例详细说明，本申请不限于此，本申请的显示模组制备方法同样适用于制备上述实施例中的任一显示模组，在此不再赘述。
在一种实施例中，提供一种显示装置，所述显示装置包括上述实施例其中之一的显示模组。
根据上述实施例可知：
本申请提供一种显示模组、制备方法以及显示装置。所述显示模组制备方法包括提供显示面板，所述显示面板包括衬底玻璃、驱动电路层、发光功能层以及封装层；在所述封装层上贴附背板；对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃。通过处理衬底玻璃得到超薄玻璃，并取代常规的PI柔性膜层支撑面板，进而不需要再采用激光剥离工艺使衬底玻璃和PI柔性膜层分开，避免了采用激光剥离工艺对洁净度和激光均匀性要求高，难以实现大尺寸，以及存在异物颗粒导致PI柔性膜层破裂等诸多问题，解决了现有柔性OLED显示屏制作工艺需采用激光剥离衬底玻璃且效果不佳的问题。同时本申请的显示模组采用底发射时，因减薄衬底玻璃形成的超薄玻璃的存在，不需要单独在出光面贴附超薄玻璃做盖板，避免了贴附超薄玻璃时发生超薄玻璃破裂，致使良率损失严重等问题。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示模组，其包括：
    超薄玻璃；
    驱动电路层，设置于所述超薄玻璃的一侧；
    发光功能层，设置于所述驱动电路层远离所述超薄玻璃的一侧；
    封装层，设置于所述发光功能层远离所述驱动电路层的一侧；以及
    支撑结构，设置于所述封装层远离所述发光功能层的一侧。
  2. 根据权利要求1所述的显示模组，其中，所述支撑结构包括背板。
  3. 根据权利要求1所述的显示模组，其中，所述支撑结构包括背板和不锈钢薄膜，所述背板贴附于所述封装层上，所述不锈钢薄膜贴附于所述背板上。
  4. 根据权利要求1所述的显示模组，其中，还包括偏光片，所述偏光片设置于所述超薄玻璃远离所述驱动电路层的一侧。
  5. 根据权利要求1所述的显示模组，其中，还包括彩膜层，所述彩膜层设置于所述超薄玻璃远离所述驱动电路层的一侧。
  6. 根据权利要求1所述的显示模组，其中，还包括触控功能层，所述触控功能层设置于所述超薄玻璃与所述驱动电路层之间。
  7. 根据权利要求1所述的显示模组，其中，还包括触控面板，所述触控面板贴附于所述超薄玻璃远离所述驱动电路层的一侧。
  8. 根据权利要求1所述的显示模组，其中，所述超薄玻璃的厚度范围为30微米至60微米。
  9. 一种显示模组制备方法，其包括：
    提供显示面板，所述显示面板包括衬底玻璃、驱动电路层、发光功能层以及封装层；
    在所述封装层上贴附背板；
    对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃；
    在所述超薄玻璃下方贴附偏光片。
  10. 根据权利要求9所述的显示模组制备方法，其中，所述在所述超薄玻璃下方贴附偏光片的步骤，包括：
    在所述超薄玻璃下方贴附触控面板；
    使用光学胶将所述偏光片贴附在所述触控面板下方。
  11. 根据权利要求9所述的显示模组制备方法，其中，所述显示面板还包括位于所述衬底玻璃和所述驱动电路层之间的触控功能层，所述在所述超薄玻璃下方贴附偏光片的步骤，包括：
    使用光学胶将所述偏光片直接贴附在所述超薄玻璃下方。
  12. 根据权利要求9所述的显示模组制备方法，其中，所述预设厚度的范围为30微米至60微米。
  13. 根据权利要求9所述的显示模组制备方法，其中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃之后，还包括：
    在所述背板上方贴附不锈钢薄膜。
  14. 根据权利要求9所述的显示模组制备方法，其中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：
    在所述背板上贴附保护膜，所述保护膜包覆所述背板以及所述驱动电路层、所述发光功能层及所述封装层的侧壁；
    将所述衬底玻璃置于预设浓度的蚀刻液中；
    在预设时长后，所述衬底玻璃减薄至预设厚度形成超薄玻璃，取出所述超薄玻璃；
    清洗所述超薄玻璃，并去除所述保护膜。
  15. 根据权利要求14所述的显示模组制备方法，其中，所述蚀刻液包括酸性蚀刻液。
  16. 根据权利要求9所述的显示模组制备方法，其中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：通过物理研磨的方式把所述衬底玻璃减薄至预设厚度形成超薄玻璃，并使所述超薄玻璃表面形成凸凹结构。
  17. 根据权利要求9所述的显示模组制备方法，其中，所述对所述衬底玻璃进行减薄处理，将所述衬底玻璃减薄至预设厚度形成超薄玻璃的步骤，包括：通过等离子蚀刻方式把所述衬底玻璃减薄至预设厚度形成超薄玻璃，并使所述超薄玻璃表面形成凸凹结构。
  18. 一种显示装置，其包括显示模组，所述显示模组包括：
    超薄玻璃；
    驱动电路层，设置于所述超薄玻璃的一侧；
    发光功能层，设置于所述驱动电路层远离所述超薄玻璃的一侧；
    封装层，设置于所述发光功能层远离所述驱动电路层的一侧；以及
    支撑结构，设置于所述封装层远离所述发光功能层的一侧。
  19. 根据权利要求18所述的显示装置，其中，所述显示模组还包括触控功能层，所述触控功能层设置于所述超薄玻璃与所述驱动电路层之间。
  20. 根据权利要求18所述的显示装置，其中，所述显示模组还包括触控面板，所述触控面板贴附于所述超薄玻璃远离所述驱动电路层的一侧。
PCT/CN2020/140230 2020-12-23 2020-12-28 显示模组、制备方法以及显示装置 WO2022134134A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US17/280,861 US20230422580A1 (en) 2020-12-23 2020-12-28 Display module, manufacturing method thereof, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011538332.7 2020-12-23
CN202011538332.7A CN112670300A (zh) 2020-12-23 2020-12-23 显示模组、制备方法以及显示装置

Publications (1)

Publication Number Publication Date
WO2022134134A1 true WO2022134134A1 (zh) 2022-06-30

Family

ID=75408206

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/140230 WO2022134134A1 (zh) 2020-12-23 2020-12-28 显示模组、制备方法以及显示装置

Country Status (3)

Country Link
US (1) US20230422580A1 (zh)
CN (1) CN112670300A (zh)
WO (1) WO2022134134A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113651539A (zh) * 2021-08-16 2021-11-16 江西沃格光电股份有限公司 玻璃基板的减薄方法
CN114335091A (zh) * 2021-12-22 2022-04-12 深圳市华星光电半导体显示技术有限公司 柔性显示面板

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779379A (zh) * 2012-10-22 2014-05-07 财团法人工业技术研究院 可挠式电子装置及其制造方法
CN103943605A (zh) * 2014-03-31 2014-07-23 华进半导体封装先导技术研发中心有限公司 基于超薄玻璃的封装结构及方法
CN104538557A (zh) * 2014-12-23 2015-04-22 深圳市华星光电技术有限公司 柔性oled显示器件及其制造方法
CN107611286A (zh) * 2017-08-21 2018-01-19 信利半导体有限公司 一种柔性oled显示器的制备方法
CN107871822A (zh) * 2016-09-23 2018-04-03 上海和辉光电有限公司 柔性显示面板及制作方法
CN111162194A (zh) * 2019-12-31 2020-05-15 武汉天马微电子有限公司 一种柔性显示面板、其制作方法及显示装置
CN111276518A (zh) * 2020-02-10 2020-06-12 武汉华星光电半导体显示技术有限公司 一种柔性显示面板、显示装置及显示装置制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103779379A (zh) * 2012-10-22 2014-05-07 财团法人工业技术研究院 可挠式电子装置及其制造方法
CN103943605A (zh) * 2014-03-31 2014-07-23 华进半导体封装先导技术研发中心有限公司 基于超薄玻璃的封装结构及方法
CN104538557A (zh) * 2014-12-23 2015-04-22 深圳市华星光电技术有限公司 柔性oled显示器件及其制造方法
CN107871822A (zh) * 2016-09-23 2018-04-03 上海和辉光电有限公司 柔性显示面板及制作方法
CN107611286A (zh) * 2017-08-21 2018-01-19 信利半导体有限公司 一种柔性oled显示器的制备方法
CN111162194A (zh) * 2019-12-31 2020-05-15 武汉天马微电子有限公司 一种柔性显示面板、其制作方法及显示装置
CN111276518A (zh) * 2020-02-10 2020-06-12 武汉华星光电半导体显示技术有限公司 一种柔性显示面板、显示装置及显示装置制备方法

Also Published As

Publication number Publication date
CN112670300A (zh) 2021-04-16
US20230422580A1 (en) 2023-12-28

Similar Documents

Publication Publication Date Title
US11329104B2 (en) Display panel and display device
JP2019066872A (ja) 電子機器
US9356080B2 (en) Organic EL display device and electronic apparatus
WO2021169607A1 (zh) 显示面板、显示装置和显示面板的制造方法
WO2020133714A1 (zh) 显示面板及显示模组、电子装置
TW202312127A (zh) 資料處理裝置
WO2020056803A1 (zh) 显示面板及其制作方法、显示模组
US20220173176A1 (en) Display panel and a display apparatus including the same
JP2023027123A (ja) 電子機器
US9772435B2 (en) Flexible display apparatus
US10705636B2 (en) Display panel and display device
WO2021239127A1 (zh) 柔性显示面板及其制备方法和显示装置
WO2021035405A1 (zh) 显示装置及其制造方法和驱动基板
US11527581B2 (en) Method of manufacturing display apparatus
WO2021169608A1 (zh) 显示面板及其制造方法、显示装置
WO2020154875A1 (zh) 像素单元及其制造方法和双面oled显示装置
WO2022134134A1 (zh) 显示模组、制备方法以及显示装置
KR20200037898A (ko) 표시 장치 및 이의 제조 방법
KR20150022534A (ko) 유기 발광 표시 장치 및 그 제조 방법
WO2019242083A1 (zh) 显示面板及显示装置
KR20150131428A (ko) 유기전계발광소자 및 이를 제조하는 방법
KR20210044943A (ko) 표시 장치 및 이의 제조 방법
CN114023906B (zh) 显示面板、显示装置、待切割基板的制作方法
WO2023184609A1 (zh) 有机发光二极管显示面板及其制造方法
WO2020192452A1 (zh) 导电结构、触控结构及触控显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20966696

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20966696

Country of ref document: EP

Kind code of ref document: A1