WO2022131213A1 - 圧電振動デバイス - Google Patents
圧電振動デバイス Download PDFInfo
- Publication number
- WO2022131213A1 WO2022131213A1 PCT/JP2021/045839 JP2021045839W WO2022131213A1 WO 2022131213 A1 WO2022131213 A1 WO 2022131213A1 JP 2021045839 W JP2021045839 W JP 2021045839W WO 2022131213 A1 WO2022131213 A1 WO 2022131213A1
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- WIPO (PCT)
- Prior art keywords
- wiring
- sealing member
- diaphragm
- main surface
- piezoelectric
- Prior art date
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- 238000007789 sealing Methods 0.000 claims abstract description 319
- 230000005284 excitation Effects 0.000 claims description 94
- 238000005304 joining Methods 0.000 claims description 69
- 239000010453 quartz Substances 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 abstract description 222
- 239000002184 metal Substances 0.000 abstract description 78
- 229910052751 metal Inorganic materials 0.000 abstract description 78
- 239000010931 gold Substances 0.000 description 57
- 229910000679 solder Inorganic materials 0.000 description 50
- 239000011229 interlayer Substances 0.000 description 49
- 230000003628 erosive effect Effects 0.000 description 33
- 230000002093 peripheral effect Effects 0.000 description 28
- 238000003475 lamination Methods 0.000 description 19
- 239000010936 titanium Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910001000 nickel titanium Inorganic materials 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
Definitions
- the present invention relates to a piezoelectric vibration device such as a piezoelectric vibrator.
- piezoelectric vibration devices for example, crystal oscillators, crystal oscillators, etc.
- the housing is composed of a substantially rectangular parallelepiped package.
- This package is composed of, for example, a first sealing member and a second sealing member made of glass or quartz, and a piezoelectric diaphragm made of quartz and having excitation electrodes formed on both main surfaces, for example, and the first sealing member.
- the second sealing member are laminated and joined via a piezoelectric diaphragm.
- the vibrating portion (exciting electrode) of the piezoelectric diaphragm arranged inside the package (internal space) is hermetically sealed (for example, Patent Document 1).
- a sandwich structure such a laminated form of the piezoelectric vibration device is referred to as a sandwich structure.
- a ground connection electrode is provided on the upper surface of the package, and the ground connection electrode is formed on the bottom surface of the package via the side wiring formed on the side surface of the package. It may be connected to the external electrode terminal.
- the side wiring for ground connection is formed on the piezoelectric diaphragm, the following problems are concerned.
- the side wiring may be damaged or corroded due to the influence of the external environment, and it may not be possible to make a stable ground connection.
- the electrode configuration of the side wiring for ground connection is the same as the electrode configuration of the excitation electrode of the vibrating portion, so that the side wiring is compared with the electrode configuration of the first and second sealing members.
- the base electrode film (for example, Ti film) may be formed thinly. Therefore, by mounting the package with solder, the side wiring may be eroded by the solder, and the risk of disconnection due to the solder erosion may increase.
- the present invention has been made in consideration of the above-mentioned circumstances, and an object of the present invention is to provide a piezoelectric vibration device having a sandwich structure capable of stably making a ground connection.
- the present invention constitutes the means for solving the above-mentioned problems as follows. That is, the present invention comprises a piezoelectric vibrating plate in which a first excitation electrode is formed on one main surface of the substrate and a second excitation electrode paired with the first excitation electrode is formed on the other main surface of the substrate. A first sealing member covering the first excitation electrode of the piezoelectric vibrating plate and a second sealing member covering the second excitation electrode of the piezoelectric vibrating plate are provided, and the first sealing member and the piezoelectric member are provided. By joining the vibrating plate and joining the second sealing member and the piezoelectric vibrating plate, the vibrating portion of the piezoelectric vibrating plate including the first exciting electrode and the second exciting electrode is vaporized.
- the piezoelectric vibrating plate connects the vibrating portion, an outer frame portion surrounding the outer periphery of the vibrating portion, and the vibrating portion and the outer frame portion.
- a holding portion is provided, and a cutout portion formed by cutting out the piezoelectric vibrating plate is provided between the vibrating portion and the outer frame portion, and is the main component of the first sealing member.
- the grounding electrode formed on the surface is on the side of the second sealing member that does not face the internal space via the internal wiring formed on the inner wall surface of the outer frame portion of the piezoelectric vibrating plate. It is characterized in that it is electrically connected to an external electrode terminal formed on the main surface.
- the internal wiring for ground connection is provided on the inner wall surface of the outer frame portion of the piezoelectric diaphragm, it is less likely to be affected by the external environment, and the ground connection can be stably performed. ..
- the ground connection can be made stably.
- the annular portion of the piezoelectric diaphragm is airtightly sealed between the first sealing member and the piezoelectric diaphragm, and between the second sealing member and the piezoelectric diaphragm. It is preferable that each sealing portion is provided and each sealing portion is electrically connected to the internal wiring. According to this configuration, the vibrating portion of the piezoelectric diaphragm can be surrounded by the annular sealing portion connected to the ground, so that the shielding effect of electromagnetic waves can be enhanced.
- the internal wiring is formed so as to extend along the inner wall surface of the outer frame portion. According to this configuration, the shielding effect of electromagnetic waves can be enhanced by the internal wiring formed in a plane on the inner wall surface of the outer frame portion.
- the internal wiring is provided on a pair of inner wall surfaces facing each other in a plan view of the outer frame portion. According to this configuration, since the vibrating portion is sandwiched by the pair of internal wiring formed in a plane, the electromagnetic wave from the side of the vibrating portion can be effectively shielded.
- the width of the internal wiring is larger than the width of the first and second excitation electrodes in the direction in which the internal wiring extends. According to this configuration, the shielding effect of electromagnetic waves can be further enhanced.
- the grounding electrode is formed on the main surface of the first sealing member on the side not facing the internal space, and the grounding electrode is the outer surface of the first sealing member.
- the external electrode terminal of the second sealing member is electrically connected to the external wiring formed on the outer surface of the second sealing member. It is preferable to have. According to this configuration, it is not necessary to provide a through hole for electrically connecting the first sealing member and the second sealing member, so that it is possible to easily cope with the miniaturization of the piezoelectric vibration device. Further, since the grounding electrode is formed on the main surface of the first sealing member on the side not facing the internal space, it does not interfere with the formation of the wiring formed in the internal space, and the first and first electrodes are formed. 2 There is no risk of short-circuiting with the excitation electrode or the like. Further, since the ground electrode is formed on the package surface relatively far from the first and second excitation electrodes, the electromagnetic wave shielding effect can be further enhanced.
- an external wiring electrically connected to one of the first and second excitation electrodes is provided on the outer surface of the piezoelectric diaphragm, and the external wiring and one of the external wirings are provided. It is preferable that the internal wiring is arranged between the excitation electrode and the excitation electrode. According to this configuration, parasitic capacitance may be generated by superimposing the external wiring and the excitation electrodes (first and second excitation electrodes) in a side view, but between the external wiring and the excitation electrode. By arranging the internal wiring connected to the ground, the parasitic capacitance caused by the superimposition between the external wiring and the excitation electrode can be suppressed.
- the grounding electrode is formed on the main surface of the first sealing member on the side facing the internal space, and the grounding electrode is the outer frame portion of the piezoelectric diaphragm. It is preferable that the internal wiring is electrically connected to the internal wiring formed on the inner wall surface of the above. According to this configuration, a grounding electrode is provided on the main surface of the first sealing member facing the internal space, and an internal wiring for grounding is provided on the inner wall surface of the outer frame portion of the piezoelectric diaphragm. Since it is provided, it is less likely to be affected by the external environment, and a stable ground connection can be made.
- the piezoelectric diaphragm is an AT-cut quartz plate and the internal wiring is provided along the Z'axis direction of the AT-cut. According to this configuration, when the piezoelectric diaphragm is processed by wet etching, it is possible to prevent the internal wiring from being broken due to the anisotropy of the AT-cut quartz plate.
- the internal wiring for ground connection is provided on the inner wall surface of the outer frame portion of the piezoelectric vibration plate, it is less susceptible to the influence of the external environment and the ground connection is stable. It can be carried out.
- an internal wiring for ground connection on the inner wall surface of the outer frame of the piezoelectric diaphragm, it is possible to prevent disconnection due to solder erosion due to solder mounting of the piezoelectric vibration device package, and via the internal wiring. Therefore, the ground connection can be made stably.
- FIG. 1 is a schematic configuration diagram schematically showing each configuration of the crystal oscillator according to the present embodiment.
- FIG. 2 is a schematic plan view of the first sealing member of the crystal oscillator on the first main surface side.
- FIG. 3 is a schematic plan view of the first sealing member of the crystal oscillator on the second main surface side.
- FIG. 4 is a schematic plan view of the crystal diaphragm of the crystal oscillator on the first main surface side.
- FIG. 5 is a schematic plan view of the crystal diaphragm of the crystal oscillator on the second main surface side.
- FIG. 6 is a schematic plan view of the second sealing member of the crystal oscillator on the first main surface side.
- FIG. 7 is a schematic plan view of the second sealing member of the crystal oscillator on the second main surface side.
- FIG. 8 is a schematic side view of the crystal oscillator on the ⁇ X direction side.
- FIG. 9 is a schematic side view of the crystal oscillator on the + X direction side.
- FIG. 10 is a schematic cross-sectional view of the second sealing member of the crystal oscillator.
- FIG. 11 is a schematic side view of the crystal oscillator according to the first modification on the ⁇ X direction side.
- FIG. 12 is a schematic side view of the crystal oscillator according to the first modification on the + X direction side.
- FIG. 13 is a view corresponding to FIG. 1 of the crystal oscillator according to the modified example 2.
- FIG. 14 is a view corresponding to FIG.
- FIG. 15 is a view corresponding to FIG. 3 of the first sealing member of the crystal oscillator according to the modified example 2.
- FIG. 16 is a view corresponding to FIG. 4 of the crystal diaphragm of the crystal oscillator according to the modified example 2.
- FIG. 17 is a view corresponding to FIG. 5 of the crystal diaphragm of the crystal oscillator according to the modified example 2.
- FIG. 18 is a view corresponding to FIG. 6 of the second sealing member of the crystal oscillator according to the modified example 2.
- FIG. 19 is a view corresponding to FIG. 7 of the second sealing member of the crystal oscillator according to the modified example 2.
- the crystal oscillator 100 includes a crystal diaphragm (piezoelectric diaphragm) 10, a first sealing member 20, and a second sealing member 30.
- the crystal diaphragm 10 and the first sealing member 20 are joined to each other, and the crystal diaphragm 10 and the second sealing member 30 are joined to form a package having a substantially rectangular sandwich structure. It is composed. That is, in the crystal oscillator 100, the internal space (cavity) of the package is formed by joining the first sealing member 20 and the second sealing member 30 to both main surfaces of the crystal diaphragm 10.
- the vibrating portion 11 (see FIGS. 4 and 5) is hermetically sealed in this internal space.
- the crystal oscillator 100 has, for example, a package size of 1.0 ⁇ 0.8 mm, and is designed to be compact and have a low profile. Further, with the miniaturization, in the package, the electrodes are made conductive by using the side wiring or the like, which will be described later, without forming the casting. Further, the crystal oscillator 100 is electrically connected to an external circuit board (not shown) provided outside via solder.
- each member of the crystal diaphragm 10, the first sealing member 20, and the second sealing member 30 in the above-mentioned crystal oscillator 100 will be described with reference to FIGS. 1 to 7.
- each member that is not joined and is configured as a single unit will be described.
- 2 to 7 show only one configuration example of each of the crystal diaphragm 10, the first sealing member 20, and the second sealing member 30, and these are not limited to the present invention.
- the crystal diaphragm 10 is a piezoelectric substrate made of quartz, and both main surfaces (first main surface 101 and second main surface 102) are flat and smooth surfaces (mirror surface processing). Is formed as. In the present embodiment, an AT-cut quartz plate that performs thick sliding vibration is used as the quartz diaphragm 10. In the crystal diaphragm 10 shown in FIGS. 4 and 5, both main surfaces 101 and 102 of the crystal diaphragm 10 are formed as XZ'planes.
- the direction parallel to the lateral direction (short side direction) of the crystal vibrating plate 10 is the X-axis direction
- the direction parallel to the longitudinal direction (long side direction) of the crystal vibrating plate 10 is the Z'axis. It is said to be the direction.
- the AT cut is 35 ° around the X axis with respect to the Z axis among the three crystal axes of the artificial quartz, the electric axis (X axis), the mechanical axis (Y axis), and the optical axis (Z axis). It is a processing method that cuts out at an angle tilted by 15'.
- the X-axis coincides with the crystal axis of the quartz.
- the Y'axis and Z'axis were tilted approximately 35 ° 15'from the Y and Z axes of the crystal axis of the crystal, respectively (this cutting angle was slightly changed within the range of adjusting the frequency temperature characteristics of the AT-cut crystal vibrating plate. May) coincide with the axis.
- the Y'axis direction and the Z'axis direction correspond to the cutting direction when cutting out the AT-cut quartz plate.
- a pair of excitation electrodes (first excitation electrode 111, second excitation electrode 112) are formed on both main surfaces 101 and 102 of the crystal diaphragm 10.
- the crystal diaphragm 10 holds the vibrating portion 11 by connecting the vibrating portion 11 formed in a substantially rectangular shape, the outer frame portion 12 surrounding the outer circumference of the vibrating portion 11, and the vibrating portion 11 and the outer frame portion 12. It has a holding portion 13 and a holding portion 13. That is, the crystal diaphragm 10 has a configuration in which the vibrating portion 11, the outer frame portion 12, and the holding portion 13 are integrally provided.
- the holding portion 13 extends (projects) from only one corner portion of the vibrating portion 11 located in the + X direction and the ⁇ Z ′ direction to the outer frame portion 12 in the ⁇ Z ′ direction.
- a cutout portion 10a formed by cutting out the crystal diaphragm 10 is provided between the vibrating portion 11 and the outer frame portion 12.
- the crystal diaphragm 10 is provided with only one holding portion 13 for connecting the vibrating portion 11 and the outer frame portion 12, so that the cutout portion 10a surrounds the outer circumference of the vibrating portion 11. It is formed continuously.
- the first excitation electrode 111 is provided on the first main surface 101 side of the vibrating portion 11, and the second excitation electrode 112 is provided on the second main surface 102 side of the vibrating portion 11.
- Extract wiring (first extraction wiring 113, second extraction wiring 114) for connecting these excitation electrodes to the external electrode terminals is connected to the first excitation electrode 111 and the second excitation electrode 112.
- the first lead-out wiring 113 is drawn out from the first excitation electrode 111 and is connected to the connection joint pattern 14 formed in the outer frame portion 12 via the holding portion 13.
- the second lead-out wiring 114 is drawn out from the second excitation electrode 112 and is connected to the connection joint pattern 15 formed on the outer frame portion 12 via the holding portion 13.
- the diaphragm-side first joining pattern 121 is formed as the diaphragm-side sealing portion of the first main surface 101
- the diaphragm-side second joining pattern 122 is formed as the diaphragm-side sealing portion of the second main surface 102. Is formed.
- the diaphragm-side first joint pattern 121 and the diaphragm-side second joint pattern 122 are provided on the outer frame portion 12, and are formed in an annular shape in a plan view.
- the outer peripheral edge of the first joining pattern 121 on the diaphragm side is provided close to the outer peripheral edge of the first main surface 101 of the crystal diaphragm 10 (outer frame portion 12).
- the outer peripheral edge of the second joining pattern 122 on the diaphragm side is provided close to the outer peripheral edge of the second main surface 102 of the crystal diaphragm 10 (outer frame portion 12).
- joining patterns 181 and 182 for inter-layer wiring are formed on the outer peripheral side of the first joining pattern 121 on the diaphragm side.
- the joint patterns 181 and 182 for inter-layer wiring are not connected to the first joint pattern 121 on the diaphragm side, and are provided at a predetermined interval from the first joint pattern 121 on the diaphragm side.
- the bonding pattern 181 for inter-layer wiring is provided on the portion of the crystal diaphragm 10 on the ⁇ X direction side and the + Z ′ direction side of the first main surface 101, and is connected to the first side surface wiring 171 described later.
- the bonding pattern 182 for inter-layer wiring is provided on the + X direction side and the ⁇ Z ′ direction side of the first main surface 101 of the crystal diaphragm 10, and is connected to the second side surface wiring 172 described later.
- joint patterns 183 and 184 for inter-layer wiring are formed on the outer peripheral side of the second joint pattern 122 on the diaphragm side.
- the joint patterns 183 and 184 for inter-layer wiring are not connected to the second joint pattern 122 on the diaphragm side, and are provided at a predetermined interval from the second joint pattern 122 on the diaphragm side.
- the bonding pattern 183 for inter-layer wiring is provided on the portion of the crystal diaphragm 10 on the ⁇ X direction side and the + Z ′ direction side of the second main surface 102, and is connected to the first side surface wiring 171 described later.
- the bonding pattern 184 for inter-layer wiring is provided on the + X direction side and the ⁇ Z ′ direction side of the second main surface 102 of the crystal diaphragm 10, and is connected to the second side surface wiring 172 described later.
- the crystal diaphragm 10 is formed with one through hole penetrating between the first main surface 101 and the second main surface 102.
- the first through hole 162 is an outer frame portion 12, and is provided on the inner peripheral side of the first joining pattern 121 on the diaphragm side and the second joining pattern 122 on the diaphragm side. Further, the first through hole 162 is provided on one side of the vibrating portion 11 in the Z'axis direction (on the ⁇ Z'direction side in FIGS. 4 and 5).
- a connection pattern 124 is formed on the first main surface 101 side and a connection joint pattern 15 is formed on the second main surface 102 side around the first through hole 162.
- first through hole 162 through electrodes for conducting conduction of the electrodes formed on the first main surface 101 and the second main surface 102 are formed along the inner wall surface of the first through hole 162. .. Further, the central portion of the first through hole 162 is a hollow through portion that penetrates between the first main surface 101 and the second main surface 102. Note that the conduction between the electrodes of the first main surface 101 and the second main surface 102 may be performed by means other than the through electrodes of the through holes (for example, wiring formed on the inner wall surface of the outer frame portion 12).
- two side wirings are formed on the side surface of the crystal diaphragm 10.
- the first side surface wiring 171 is formed on the side surface 103 on the ⁇ X direction side of the crystal diaphragm 10.
- a second side surface wiring 172 is formed on the side surface 104 on the + X direction side of the crystal diaphragm 10.
- the first side surface wiring 171 is formed on the + Z'direction side portion of the side surface 103 on the ⁇ X direction side of the crystal diaphragm 10.
- the first side surface wiring 171 is connected to a joint pattern 181 for inter-layer wiring provided on the first main surface 101 of the crystal diaphragm 10.
- the first side surface wiring 171 is connected to a joint pattern 183 for inter-layer wiring provided on the second main surface 202 of the crystal diaphragm 10.
- the second side surface wiring 172 is formed on the portion of the side surface 104 on the + X direction side of the crystal diaphragm 10 on the ⁇ Z ′ direction side.
- the second side surface wiring 172 is connected to a joint pattern 182 for inter-layer wiring provided on the first main surface 101 of the crystal diaphragm 10.
- the second side surface wiring 172 is connected to a joint pattern 184 for inter-layer wiring provided on the second main surface 202 of the crystal diaphragm 10.
- two internal wirings are formed on the inner wall surface of the outer frame portion 12 of the crystal diaphragm 10.
- the first internal wiring 173 is formed on the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12 of the crystal diaphragm 10.
- the second internal wiring 174 is formed on the inner wall surface 106 on the + X direction side of the outer frame portion 12 of the crystal diaphragm 10.
- the first internal wiring 173 is provided in the central portion of the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12 with a predetermined width.
- the first internal wiring 173 is connected to the diaphragm-side first joining pattern 121 provided on the first main surface 101 of the crystal diaphragm 10.
- the first internal wiring 173 is connected to the diaphragm-side second joint pattern 122 provided on the second main surface 102 of the crystal diaphragm 10.
- the second internal wiring 174 is provided in the central portion of the inner wall surface 106 on the + X direction side of the outer frame portion 12 with a predetermined width.
- the second internal wiring 174 is connected to the diaphragm-side first joining pattern 121 provided on the first main surface 101 of the crystal diaphragm 10.
- the second internal wiring 174 is connected to the diaphragm-side second joint pattern 122 provided on the second main surface 102 of the crystal diaphragm 10.
- the first internal wiring 173 and the second internal wiring 174 are arranged so as to face each other with the vibrating portion 11 interposed therebetween.
- the first sealing member 20 is a rectangular parallelepiped substrate formed from one AT-cut quartz plate, and the second main surface 202 (crystal) of the first sealing member 20.
- the surface to be joined to the diaphragm 10) is formed as a flat smooth surface (mirror surface processing).
- the first sealing member 20 does not have a vibrating portion, the coefficient of thermal expansion of the crystal vibrating plate 10 and the first sealing member 20 can be determined by using an AT-cut quartz plate as in the quartz diaphragm 10. The same can be made, and thermal deformation in the quartz oscillator 100 can be suppressed. Further, the directions of the X-axis, the Y-axis, and the Z'axis of the first sealing member 20 are also the same as those of the quartz diaphragm 10.
- first and second terminals 22 and 23 for wiring and A metal film 28 for shielding (for ground connection) is formed on the first main surface 201 (outer main surface not facing the crystal diaphragm 10) of the first sealing member 20, on the first main surface 201 (outer main surface not facing the crystal diaphragm 10) of the first sealing member 20, first and second terminals 22 and 23 for wiring and A metal film 28 for shielding (for ground connection) is formed.
- the first and second terminals 22 and 23 for wiring are for electrically connecting the first and second excitation electrodes 111 and 112 of the crystal diaphragm 10 and the external electrode terminal 32 of the second sealing member 30. It is provided as wiring.
- the first and second terminals 22 and 23 are provided at both ends in the Z'axis direction, the first terminal 22 is provided on the + Z'direction side, and the second terminal 23 is on the ⁇ Z'direction side. It is provided.
- the first and second terminals 22 and 23 are formed so as to extend in the X-axis direction.
- the first terminal 22 and the second terminal 23 are formed in a substantially rectangular shape.
- the first terminal 22 extends to the end of the first main surface 201 on the ⁇ X direction side, and is connected to the third side surface wiring 271 described later.
- the second terminal 23 extends to the end of the first main surface 201 on the + X direction side, and is connected to the fourth side surface wiring 272, which will be described later.
- the metal film 28 is provided between the first and second terminals 22 and 23, and is arranged at a predetermined interval from the first and second terminals 22 and 23.
- the metal film 28 is provided in almost all the regions where the first and second terminals 22 and 23 of the first main surface 201 of the first sealing member 20 are not formed.
- the metal film 28 is provided from the end portion of the first main surface 201 of the first sealing member 20 in the + X direction to the end portion in the ⁇ X direction.
- the metal film 28 extends to the end of the first main surface 201 in the ⁇ X direction and is connected to the fifth side surface wiring 273, which will be described later. Further, the metal film 28 extends to the end of the first main surface 201 in the + X direction and is connected to the sixth side surface wiring 274 described later.
- the first sealing member 20 is formed with two through holes penetrating between the first main surface 201 and the second main surface 202.
- the second and third through holes 212 and 213 are provided in the + Z'direction and the ⁇ Z'direction in FIGS. 2 and 3, respectively.
- the second and third through holes 212 and 213 through electrodes for conducting the electrodes formed on the first main surface 201 and the second main surface 202 are provided in the second and third through holes 212 and 213. It is formed along the inner wall surface of each. Further, the central portion of each of the second and third through holes 212 and 213 is a hollow through portion penetrating between the first main surface 201 and the second main surface 202. Then, the through electrode of the second through hole 212 is electrically connected to the first terminal 22. The through electrode of the third through hole 213 is electrically connected to the second terminal 23.
- a sealing member side first joining pattern 24 is formed as a sealing member side first sealing portion for joining to the quartz diaphragm 10.
- the first joining pattern 24 on the sealing member side is formed in an annular shape in a plan view.
- the outer peripheral edge of the first joining pattern 24 on the sealing member side is provided close to the outer peripheral edge of the second main surface 202 of the first sealing member 20.
- a connection joining pattern 261 is formed around the second through hole 212, and a connecting joining pattern 262 is formed around the third through hole 213. Is formed.
- connection joint pattern 263 is formed on the opposite side (-Z'direction side) of the first sealing member 20 in the major axis direction with respect to the connection joint pattern 261, and is connected to the connection joint pattern 261. It is connected to the joint pattern 263 by a wiring pattern 27.
- a joining pattern 281,228 for inter-layer wiring is formed on the outer peripheral side of the first joining pattern 24 on the sealing member side.
- the joint patterns 281,282 for inter-layer wiring are not connected to the first joining pattern 24 on the sealing member side, and are provided at a predetermined interval from the first joining pattern 24 on the sealing member side.
- the joint pattern 281 for inter-layer wiring is provided on the portion of the second main surface 202 of the first sealing member 20 on the ⁇ X direction side and the + Z ′ direction side, and is connected to the third side surface wiring 271 described later.
- the joint pattern 282 for inter-layer wiring is provided on the + X direction side and the ⁇ Z ′ direction side of the second main surface 202 of the first sealing member 20, and is connected to the fourth side surface wiring 272 described later. There is.
- four side wirings are formed on the side surface of the first sealing member 20.
- the third side surface wiring 271 and the fifth side surface wiring 273 are formed on the side surface 203 on the ⁇ X direction side of the first sealing member 20.
- the fourth side surface wiring 272 and the sixth side surface wiring 274 are formed on the side surface 204 on the + X direction side of the first sealing member 20.
- the third side surface wiring 271 is formed on the + Z'direction side portion of the side surface 203 on the ⁇ X direction side of the first sealing member 20.
- the third side surface wiring 271 is connected to the first terminal 22 provided on the first main surface 201 of the first sealing member 20.
- the third side surface wiring 271 is connected to a joint pattern 281 for inter-layer wiring provided on the second main surface 202 of the first sealing member 20.
- the fourth side surface wiring 272 is formed on the portion of the side surface 204 on the + X direction side of the first sealing member 20 on the ⁇ Z ′ direction side.
- the fourth side surface wiring 272 is connected to the second terminal 23 provided on the first main surface 201 of the first sealing member 20.
- the fourth side surface wiring 272 is connected to a joint pattern 282 for inter-layer wiring provided on the second main surface 202 of the first sealing member 20.
- the fifth side surface wiring 273 is formed on the portion of the side surface 203 on the ⁇ X direction side of the first sealing member 20 on the ⁇ Z ′ direction side.
- the fifth side surface wiring 273 is connected to the metal film 28 provided on the first main surface 201 of the first sealing member 20.
- the fifth side surface wiring 273 is connected to the first joining pattern 24 on the sealing member side provided on the second main surface 202 of the first sealing member 20.
- the sixth side surface wiring 274 is formed on the + Z'direction side portion of the + X direction side surface 204 of the first sealing member 20.
- the sixth side surface wiring 274 is connected to the metal film 28 provided on the first main surface 201 of the first sealing member 20.
- the sixth side surface wiring 274 is connected to the sealing member side first joining pattern 24 provided on the second main surface 202 of the first sealing member 20.
- the second sealing member 30 is a rectangular parallelepiped substrate formed from one AT-cut quartz plate, and the first main surface 301 (crystal) of the second sealing member 30.
- the surface to be joined to the diaphragm 10) is formed as a flat smooth surface (mirror surface processing). It is desirable that the second sealing member 30 also uses an AT-cut quartz plate as in the quartz diaphragm 10, and the directions of the X-axis, the Y-axis, and the Z'axis are the same as those of the quartz diaphragm 10.
- a sealing member side second joining pattern 31 is formed as a sealing member side second sealing portion for joining to the quartz diaphragm 10. ..
- the second joining pattern 31 on the sealing member side is formed in an annular shape in a plan view.
- the outer peripheral edge of the second joining pattern 31 on the sealing member side is provided close to the outer peripheral edge of the first main surface 301 of the second sealing member 30.
- joining patterns 381 and 382 for inter-layer wiring are formed on the outer peripheral side of the second joining pattern 31 on the sealing member side.
- the joint patterns 381 and 382 for inter-layer wiring are not connected to the second joint pattern 31 on the sealing member side, and are provided at a predetermined interval from the second joint pattern 31 on the sealing member side.
- the joint pattern 381 for inter-layer wiring is provided on the portion of the first main surface 301 of the second sealing member 30 on the ⁇ X direction side and the + Z ′ direction side, and is connected to the seventh side surface wiring 371 described later.
- the joint pattern 382 for inter-layer wiring is provided on the + X direction side and the ⁇ Z ′ direction side of the first main surface 301 of the second sealing member 30, and is connected to the eighth side surface wiring 372 described later. There is.
- the electrode terminal 32 is provided on the second main surface 302 (outer main surface not facing the crystal diaphragm 10) of the second sealing member 30, there are four externals electrically connected to an external circuit board provided outside the crystal oscillator 100.
- the electrode terminal 32 is provided.
- the external electrode terminals 32 are located at the four corners (corners) of the second main surface 302 of the second sealing member 30.
- the external electrode terminals 32 are provided along the internal space of the package of the crystal oscillator 100 in a plan view, and are formed in a substantially L shape.
- the external electrode terminal 32 is provided at a position overlapping the outer frame portion 12 of the quartz diaphragm 10 described above in a plan view.
- four side wirings are formed on the side surface of the second sealing member 30.
- the seventh side surface wiring 371 and the ninth side surface wiring 373 are formed on the side surface 303 on the ⁇ X direction side of the second sealing member 30.
- the eighth side surface wiring 372 and the tenth side surface wiring 374 are formed on the side surface 304 on the + X direction side of the second sealing member 30.
- the seventh side surface wiring 371 is formed on the + Z'direction side portion of the side surface 303 on the ⁇ X direction side of the second sealing member 30.
- the seventh side surface wiring 371 is connected to a joint pattern 381 for inter-layer wiring provided on the first main surface 301 of the second sealing member 30.
- the seventh side surface wiring 371 is connected to an external electrode terminal 32 provided on the second main surface 302 of the second sealing member 30.
- the eighth side surface wiring 372 is formed on the portion of the side surface 304 on the + X direction side of the second sealing member 30 on the ⁇ Z ′ direction side.
- the eighth side surface wiring 372 is connected to a joint pattern 382 for inter-layer wiring provided on the first main surface 301 of the second sealing member 30.
- the eighth side surface wiring 372 is connected to an external electrode terminal 32 provided on the second main surface 302 of the second sealing member 30.
- the ninth side surface wiring 373 is formed on the portion of the side surface 303 on the ⁇ X direction side of the second sealing member 30 on the ⁇ Z ′ direction side.
- the ninth side surface wiring 373 is connected to the sealing member side second joining pattern 31 provided on the first main surface 301 of the second sealing member 30.
- the ninth side surface wiring 373 is connected to an external electrode terminal 32 provided on the second main surface 302 of the second sealing member 30.
- the tenth side surface wiring 374 is formed on a portion of the side surface 304 on the + X direction side of the second sealing member 30 on the + Z'direction side.
- the tenth side surface wiring 374 is connected to a second joining pattern 31 on the sealing member side provided on the first main surface 301 of the second sealing member 30.
- the tenth side surface wiring 374 is connected to an external electrode terminal 32 provided on the second main surface 302 of the second sealing member 30.
- the crystal vibrating plate 10 and the first sealing member 20 have a first joining pattern on the diaphragm side. 121 and the first joining pattern 24 on the sealing member side are overlapped and diffusion-bonded, and the crystal diaphragm 10 and the second sealing member 30 are joined together with the second joining pattern 122 on the diaphragm side and the second joining on the sealing member side.
- the patterns 31 are diffusively joined in a superposed state to produce a package having a sandwich structure shown in FIGS. 1, 8 and 9. As a result, the internal space of the package, that is, the accommodation space of the vibrating portion 11 is hermetically sealed.
- the sealing portions (seal paths) 115 and 116 that airtightly seal the vibrating portion 11 of the quartz diaphragm 10 are formed in an annular shape in a plan view.
- the seal path 115 is formed by diffusion bonding (Au-Au bonding) of the diaphragm-side first bonding pattern 121 and the sealing member-side first bonding pattern 24 described above, and the inner edge shape of the seal path 115 is formed into a substantially octagonal shape.
- the outer edge shape of the seal path 115 is formed in a substantially rectangular shape, and the outer peripheral edge of the seal path 115 is arranged close to the outer peripheral edge of the package.
- the seal path 116 is formed by diffusion bonding (Au-Au bonding) of the diaphragm-side second bonding pattern 122 and the sealing member-side second bonding pattern 31 described above, and the inner edge shape of the sealing path 116 is substantially octagonal. It is formed.
- the outer edge shape of the seal path 116 is formed in a substantially rectangular shape, and the outer peripheral edge of the seal path 116 is arranged close to the outer peripheral edge of the package.
- the first sealing member 20 and the crystal diaphragm 10 have a gap of 1.00 ⁇ m or less, and the second sealing member 30. And the crystal diaphragm 10 have a gap of 1.00 ⁇ m or less. That is, the thickness of the seal path 115 between the first sealing member 20 and the crystal diaphragm 10 is 1.00 ⁇ m or less, and the thickness of the seal path 116 between the second sealing member 30 and the crystal diaphragm 10 is 1.00 ⁇ m or less. , 1.00 ⁇ m or less (specifically, 0.15 ⁇ m to 1.00 ⁇ m in the Au-Au junction of the present embodiment). As a comparative example, in the conventional metal paste encapsulant using Sn, the thickness is 5 ⁇ m to 20 ⁇ m.
- connection patterns for connection and the joint patterns for wiring between layers are also diffusion-bonded in a superposed state. Then, by joining the connection patterns for connection and the joint patterns for wiring between layers, in the crystal oscillator 100, electrical conduction between the first excitation electrode 111 and the second excitation electrode 112 and the external electrode terminal 32 is performed.
- the first excitation electrode 111 includes a first lead wiring 113, a wiring pattern 27, a second through hole 212, a first terminal 22, a third side surface wiring 271, a first inter-layer wiring 117, and a first side surface wiring. It is connected to the external electrode terminal 32 via 171 and the second inter-layer wiring 118 and the seventh side surface wiring 371 in this order.
- the first inter-layer wiring 117 is wiring arranged between the first sealing member 20 and the crystal diaphragm 10.
- the first inter-lamination wiring 117 is formed between the inter-lamination wiring joint pattern 281 formed on the second main surface 202 of the first sealing member 20 and the inter-lamination wiring formed on the first main surface 101 of the quartz diaphragm 10. It is formed by diffusion bonding with the wiring bonding pattern 181.
- the third side surface wiring 271 is connected to the end of the first inter-layer wiring 117 on the + Z'direction side, and the first inter-layer wiring 117 is connected to the end on the ⁇ Z'direction side. 1 Side wiring 171 is connected.
- the second inter-lamination wiring 118 is a wiring arranged between the laminating of the crystal diaphragm 10 and the second sealing member 30.
- the second inter-lamination wiring 118 is formed between the inter-lamination wiring joint pattern 183 formed on the second main surface 102 of the crystal diaphragm 10 and the inter-lamination wiring 118 formed on the first main surface 301 of the second sealing member 30. It is formed by diffusion bonding with the wiring bonding pattern 381.
- the first side surface wiring 171 is connected to the end of the second inter-layer wiring 118 on the ⁇ Z ′ direction side, and the second inter-lamination wiring 118 is connected to the + Z ′ direction end of the second inter-lamination wiring 118.
- Side wiring 371 is connected.
- the second excitation electrode 112 includes a second lead-out wiring 114, a first through hole 162, a third through hole 213, a second terminal 23, a fourth side surface wiring 272, a third inter-layer wiring 119, and a second side surface wiring 172.
- the third inter-layer wiring 119 is wiring arranged between the first sealing member 20 and the crystal diaphragm 10.
- the third inter-lamination wiring 119 is a bonding pattern 282 for inter-lamination wiring formed on the second main surface 202 of the first sealing member 20, and an inter-lamination wiring formed on the first main surface 101 of the quartz diaphragm 10.
- the fourth side surface wiring 272 is connected to the end portion of the third inter-layer wiring 119 on the ⁇ Z ′ direction side, and the third inter-layer wiring 119 is connected to the end portion on the + Z ′ direction side.
- Two side wirings 172 are connected.
- the fourth inter-layer wiring 120 is wiring arranged between the layers of the crystal diaphragm 10 and the second sealing member 30.
- the fourth inter-lamination wiring 120 is formed between the inter-lamination wiring joint pattern 184 formed on the second main surface 102 of the crystal diaphragm 10 and the inter-lamination wiring formed on the first main surface 301 of the second sealing member 30. It is formed by diffusion bonding with the wiring bonding pattern 382.
- the second side surface wiring 172 is connected to the end of the fourth inter-layer wiring 120 on the + Z'direction side, and the second side wiring 172 is connected to the end of the fourth inter-layer wiring 120 on the ⁇ Z'direction side. 8 side wiring 372 is connected.
- the metal film 28 is connected to the ground (ground connection, a part of the external electrode terminal 32) via the fifth side wiring 273, the seal path 115, the first internal wiring 173, the seal path 116, and the ninth side wiring 373 in this order. It's being used.
- the metal film 28 is connected to the ground (ground connection, part of the external electrode terminal 32) via the sixth side wiring 274, the seal path 115, the second internal wiring 174, the seal path 116, and the tenth side wiring 374 in this order. Is used).
- the electrical conduction path between the first and second excitation electrodes 111 and 112 and the external electrode terminals 32 and 32 is not electrically connected to the annular seal paths 115 and 116. ing.
- the first excitation electrode 111 is placed on the first main surface of the first sealing member 20 via the through electrode of the second through hole 212 inside the annular seal paths 115 and 116. It is electrically connected to the first terminal 22 of 201.
- the first terminal 22 is arranged so as to straddle the inside and the outside of the annular seal paths 115 and 116 in a plan view.
- the first terminal 22 is second sealed via the side wiring 271, 171 and 371 formed on the package side surface of the crystal oscillator 100. It is electrically connected to the external electrode terminal 32 of the second main surface 302 of the member 30.
- the electrical conduction path between the first excitation electrode 111 and the external electrode terminal 32 is not electrically connected to the annular seal paths 115 and 116.
- the second excitation electrode 112 is first sealed via the through electrode of the first through hole 162 and the through electrode of the third through hole 213. It is electrically connected to the second terminal 23 of the first main surface 201 of the member 20.
- the second terminal 23 is arranged so as to straddle the inside and the outside of the annular seal paths 115 and 116 in a plan view.
- the second terminal 23 is second sealed via the side wiring 272,172,372 formed on the package side surface of the crystal oscillator 100. It is electrically connected to the external electrode terminal 32 of the second main surface 302 of the member 30.
- the electrical conduction path between the second excitation electrode 112 and the external electrode terminal 32 is not electrically connected to the annular seal paths 115 and 116.
- the crystal oscillator 100 in the above-mentioned various bonding patterns, a plurality of layers are laminated on a quartz plate, and a Ti (titanium) layer and an Au (gold) layer are formed by vapor deposition or sputtering from the lowest layer side thereof. It is preferable that it is. Further, if the other wirings and electrodes formed on the crystal oscillator 100 have the same configuration as the bonding pattern, the bonding patterns, wirings and electrodes can be patterned at the same time, which is preferable.
- a metal film 28 as a grounding electrode is provided on the first main surface (main surface on the side not facing the internal space) 201 of the first sealing member 20.
- the metal film 28 faces the second main surface (internal space) of the second sealing member 30 via the first internal wiring 173 formed on the inner wall surface 105 of the outer frame portion 12 of the crystal diaphragm 10. It is electrically connected to the external electrode terminal 32 formed on the main surface) 302 on the non-side side. Further, the metal film 28 was formed on the second main surface 302 of the second sealing member 30 via the second internal wiring 174 formed on the inner wall surface 106 of the outer frame portion 12 of the crystal diaphragm 10.
- the crystal diaphragm 10 is manufactured in the state of a wafer, but the wafer of the crystal diaphragm 10 has an electrode configuration such as a first internal wiring 173 and a second internal wiring 174.
- the base electrode film for example, Ti film
- the first internal wiring 173 and the second internal wiring 174 is formed thinner than the electrode configurations of the first and second sealing members 20 and 30.
- the electrodes provided on the side surfaces of the package have a high risk of disconnection due to solder erosion, and there is a possibility that the ground connection cannot be stably performed.
- solder erosion is provided by providing the first internal wiring 173 (second internal wiring 174) for ground connection on the inner wall surface 105 (106) of the outer frame portion 12 of the crystal diaphragm 10. It is possible to prevent disconnection due to the above, and stable ground connection can be made via the first internal wiring 173 (second internal wiring 174).
- the annular seal paths 115 and 116 are electrically connected to the first internal wiring 173 (second internal wiring 174).
- the vibrating portion 11 of the crystal diaphragm 10 can be surrounded by the annular seal paths 115 and 116 connected to the ground, so that the electromagnetic wave shielding effect can be enhanced.
- the first internal wiring 173 (second internal wiring 174) is formed in a planar shape so as to extend along the inner wall surface 105 (106) of the outer frame portion 12 of the crystal diaphragm 10. ..
- the electromagnetic wave shielding effect can be enhanced by the first internal wiring 173 (second internal wiring 174) formed in a plane on the inner wall surface 105 (106) of the outer frame portion 12.
- the first and second internal wirings 173 and 174 are provided on the pair of inner wall surfaces 105 and 106 facing each other in the plan view of the outer frame portion 12 of the crystal diaphragm 10.
- the vibrating portion 11 is sandwiched by the pair of first and second internal wirings 173 and 174 formed in a plane shape, so that the electromagnetic wave from the side of the vibrating portion 11 can be effectively shielded.
- the width of the first and second internal wirings 173 and 174 is larger than the width of the first and second excitation electrodes 111 and 112. Is also larger, so the electromagnetic wave shielding effect can be further enhanced.
- the metal film 28 formed on the first main surface 201 on the side not facing the internal space of the first sealing member 20 is formed in the ⁇ X direction of the first sealing member 20. It is electrically connected to the fifth side surface wiring 273 formed on the side surface 203, and the external electrode terminal 32 of the second sealing member 30 is attached to the side surface 303 on the ⁇ X direction side of the second sealing member 30. It is electrically connected to the formed ninth side surface wiring 373. Further, the metal film 28 of the first sealing member 20 is electrically connected to the sixth side surface wiring 274 formed on the side surface 204 on the + X direction side of the first sealing member 20, and the second sealing member 20 is connected.
- the external electrode terminal 32 of 30 is electrically connected to the tenth side surface wiring 374 formed on the side surface 304 on the + X direction side of the second sealing member 30. According to this configuration, it is not necessary to provide a through hole for making an electrical connection on the outer peripheral side of the seal paths 115 and 116 of the first and second sealing members 20 and 30, so that the crystal oscillator does not need to be provided. It can easily cope with the miniaturization of 100. Further, since the metal film 28 is formed on the first main surface 201 on the side of the first sealing member 20 that does not face the internal space, it does not interfere with the formation of the wiring formed in the internal space. There is no risk of short-circuiting with the first and second excitation electrodes 111, 112 and the like. Further, since the metal film 28 is formed on the package surface relatively distant from the first and second excitation electrodes 111 and 112, the shielding effect of electromagnetic waves can be further enhanced.
- a first side surface wiring 171 electrically connected to the first excitation electrode 111 is provided on the side surface 103 on the ⁇ X direction side of the crystal diaphragm 10.
- a first internal wiring 173 is arranged between the first side surface wiring 171 and the first excitation electrode 111.
- the first side surface wiring 171 and the first excitation electrode 111 are superimposed in a side view, but by arranging the first internal wiring 173 connected to the ground between the first side surface wiring 171 and the first excitation electrode 111. , It is possible to suppress the parasitic capacitance generated due to the superposition of the first side surface wiring 171 and the first excitation electrode 111.
- a second side surface wiring 172 electrically connected to the second excitation electrode 112 is provided on the side surface 104 on the + X direction side of the crystal diaphragm 10, and the second side surface wiring is provided.
- a second internal wiring 174 is arranged between the 172 and the second excitation electrode 112.
- the second side surface wiring 172 and the second excitation electrode 112 are superimposed in a side view, but by arranging the second internal wiring 174 connected to the ground between the second side surface wiring 172 and the second excitation electrode 112. , The parasitic capacitance generated due to the superposition between the second side surface wiring 172 and the second excitation electrode 112 can be suppressed.
- the first excitation electrode 111 does not face the internal space of the first sealing member 20 via the through electrode of the second through hole 212 provided in the first sealing member 20. It is electrically connected to the first terminal 22 formed on the first main surface 201 on the side.
- the second excitation electrode 112 is first sealed via the through electrode of the first through hole 162 provided in the quartz diaphragm 10 and the through electrode of the third through hole 213 provided in the first sealing member 20. It is electrically connected to the second terminal 23 on which the stop member 20 is formed.
- the first terminal 22 is the second main surface 302 on the side not facing the internal space of the second sealing member 30 via the side wirings 271, 171, 371 formed on the side surface of the package of the crystal oscillator 100.
- the second terminal 23 is an external electrode terminal (second) formed on the second main surface 302 of the second sealing member 30 via the side wiring 272, 172, 372 formed on the package side surface of the crystal oscillator 100. 2 External electrode terminal) It is electrically connected to 32.
- the first and first terminals 22 and 23 formed on the first main surface 201 on the side not facing the internal space of the first sealing member 20 are passed through. Since the two excitation electrodes 111 and 112 and the external electrode terminals 32 and 32 are electrically connected, the electrical conduction path from the first and second excitation electrodes 111 and 112 to the external electrode terminals 32 and 32 is lengthened. It is possible to suppress erosion of the first and second excitation electrodes 111 and 112 due to solder. Further, it is possible to suppress an increase in conduction resistance due to solder erosion of the side wiring 271,171,371 and the side wiring 272,172,372, and the occurrence of disconnection or the like.
- first and second terminals 22 and 23 and the external electrode terminals 32 and 32 are electrically connected without using through holes, the crystal diaphragm 10, the first and second sealing members 20 are connected. It is not necessary to form through holes in the outer peripheral edges of each of the parts and 30s, and the size of the crystal unit 100 can be easily reduced.
- the side wiring 271,171,371 and the side wiring 272,172,372 are formed without forming a recess (castration) on the side surface of the package. This eliminates the need to form recesses on the side surfaces of the crystal diaphragm 10, the first and second sealing members 20 and 30, and can easily cope with the miniaturization of the crystal oscillator 100.
- the first side surface wiring 171 formed on the crystal diaphragm 10 is formed on at least the second sealing member 30. It is arranged so as to be offset from the seventh side surface wiring 371 in a plan view. As shown in FIG. 8, the first side surface wiring 171 of the crystal diaphragm 10 is flat with respect to both the third side surface wiring 271 of the first sealing member 20 and the seventh side surface wiring 371 of the second sealing member 30. Visually, they are arranged so as to be offset in the ⁇ Z'direction side.
- the first side surface wiring 171 of the crystal diaphragm 10 is connected to the third side surface wiring 271 of the first sealing member 20 via the first inter-layer wiring 117, and the first side surface wiring 171 is between the second layers. It is connected to the seventh side surface wiring 371 of the second sealing member 30 via the wiring 118.
- the second side surface wiring 172 formed on the crystal diaphragm 10 is formed on at least the second sealing member 30.
- the 8 side wirings 372 are arranged so as to be offset from each other in a plan view.
- the second side surface wiring 172 of the crystal diaphragm 10 is flat with respect to both the fourth side surface wiring 272 of the first sealing member 20 and the eighth side surface wiring 372 of the second sealing member 30. Visually, they are arranged so as to be offset in the + Z'direction side.
- the second side surface wiring 172 of the crystal diaphragm 10 is connected to the fourth side surface wiring 272 of the first sealing member 20 via the third inter-stacking wiring 119, and the second side surface wiring 172 is connected to the fourth laminating. It is connected to the eighth side surface wiring 372 of the second sealing member 30 via the wiring 120.
- the side wirings 171 and 172 of the crystal diaphragm 10 and the side wirings 271,272,371,372 of the first and second sealing members 20 and 30 are used. Is not particularly limited as long as it is not superimposed in the side view.
- the side wiring 171 and 172 of the crystal diaphragm 10 is between the side wirings 171 and 172 of the crystal diaphragm 10 and the side wirings 371 and 372 of the second sealing member 30.
- the width of the side wirings 171 and 172 of the crystal diaphragm 10 in the Z'axis direction is a gap of approximately the same length.
- the crystal diaphragm 10, the first and second sealing members 20, 30 are AT-cut crystal plates, respectively, and the side wiring 271,171,371 and the side wiring 272,172,372 are AT-cut. It is formed along the Z'axis direction of the quartz plate (on the X-axis end face). As a result, stable side wiring 271,171,371 and side wiring 272,172,372 that are less likely to be disconnected can be easily formed. This point will be described below.
- the crystal diaphragm 10, the first and second sealing members 20 and 30 are manufactured in the state of a wafer, but the crystal diaphragm 10, the first and second sealing members 20 and The outer shape of each of the 30 is formed by wet etching.
- protrusions or the like protruding in the Z'axis direction may occur on the Z'axis end surface of the crystal vibrating plate 10 or the like, and side wiring is provided on the Z'axis end surface.
- the film thickness of the side wiring becomes small in the protrusion portion and the shadow of the protrusion is generated at the time of exposure, which makes it difficult to pattern the side wiring.
- the side wiring 271,171 (on the X-axis end face) along the Z'axis direction of the crystal diaphragm 10, the first and second sealing members 20, 30 formed by the AT-cut quartz plate. , 371 and side wiring 272,172,372, it is possible to easily form stable side wiring 271,171,371 and side wiring 272,172,372 in which disconnection is unlikely to occur.
- the electrode configurations of the first side surface wiring 171 and the second side surface wiring 172 are common to the electrode configurations of the first and second excitation electrodes 111 and 112 of the vibrating unit 11. Therefore, the base electrode film (for example, Ti film) of the first side surface wiring 171 and the second side surface wiring 172 is formed thinner than the electrode configurations of the first and second sealing members 20 and 30.
- the electrode configuration of the quartz diaphragm 10 includes a Ti film and an Au film
- the electrode configurations of the first and second sealing members 20 and 30 include a Ti film, a NiTi film, and an Au film. It has become.
- the Ti film having the electrode structure of the quartz diaphragm 10 is thinner than the Ti film having the electrode structure of the first and second sealing members 20 and 30.
- the side wirings 371 and 372 are configured to be conductive by a conductive metal other than Au, they have an erosion resistant structure against solder.
- An external electrode terminal 32 electrically connected to an external circuit board via solder is formed on the second main surface 302 on the side of the crystal oscillator 100 that does not face the internal space of the second sealing member 30. ing.
- the external electrode terminal 32 is electrically connected to the first excitation electrode 111 via the side wirings 371, 171, 271 formed on the side surface of the package of the crystal oscillator 100. Further, the external electrode terminal 32 is electrically connected to the second excitation electrode 112 via the side wiring 372, 172, 272 formed on the side surface of the package of the crystal oscillator 100.
- the 7th and 8th side surface wirings 371 and 372 of the 2nd sealing member 30 are provided with an corrosion resistant structure against solder.
- FIG. 10 shows only the erosion-resistant structure provided on the seventh side surface wiring 371 of the side surface 303 on the ⁇ X direction side of the second sealing member 30, but the + X direction side of the second sealing member 30.
- the eighth side wiring 372 of the side surface 304 is also provided with a similar corrosion resistant structure.
- the seventh side surface wiring 371 is formed on the side surface 303 on the ⁇ X direction side of the second sealing member 30.
- External electrode terminal 32 formed on the second main surface 302 of the second sealing member 30 by the seventh side surface wiring 371, and wiring between the second layers formed on the first main surface 301 of the second sealing member 30. It is electrically connected to 118.
- the seventh side surface wiring 371 includes a first metal film 371a made of a first conductive metal formed by vapor deposition or sputtering on the side surface 303 on the ⁇ X direction side of the second sealing member 30, and the first metal film 371a thereof. It is configured to have a second metal film 371b made of a second conductive metal formed by vapor deposition or sputtering on the metal film 371a.
- the external electrode terminal 32 is formed on a second main surface 302 of the second sealing member 30 by a first metal film 32a made of a first conductive metal formed by vapor deposition or sputtering, and the first metal film 32a.
- the second inter-lamination wiring 118 is the inter-lamination wiring joint pattern 381 provided on the first main surface 301 of the second sealing member 30 and the inter-lamination wiring provided on the second main surface 202 of the crystal diaphragm 10. It is formed by joining with the joining pattern 183. Since the removal of the Au film is performed on the second sealing member 30 in the state of the wafer before the formation of the second inter-layer wiring 118 (before joining), the formation of the second inter-layer wiring 118 is shown in FIG. Only the front (before joining) joining pattern 381 for inter-layer wiring is shown.
- the bonding pattern 381 for inter-lamination wiring includes a first metal film 381a made of a first conductive metal formed by vapor deposition or sputtering on a first main surface 301 of the second sealing member 30, and the first metal film 381a thereof.
- the metal film 381a is configured to have an Au film 381c made of Au (gold) formed by vapor deposition or sputtering.
- the first conductive metal is used as the first conductive metal and NiTi (nickel / titanium) is used as the second conductive metal.
- the above-mentioned first and second conductive metals are examples, and conductive metals other than the above may be used.
- the multilayer structure of the seventh side surface wiring 371, the external electrode terminal 32, and the bonding pattern 381 for inter-layer wiring described above is an example, and the number of layers of each electrode is not particularly limited.
- the bonding pattern 381 for inter-layer wiring may have a three-layer structure having a second metal film like the external electrode terminal 32, or the external electrode terminal 32 may be the same as the bonding pattern 381 for inter-layer wiring.
- a two-layer structure having no second metal film may be used.
- the first metal film 381a of the bonding pattern 381 for inter-layer wiring, the first metal film 371a of the seventh side surface wiring 371, and the first metal film 32a of the external electrode terminal 32 are integrally formed. Further, the second metal film 371b of the seventh side surface wiring 371 and the second metal film 32b of the external electrode terminal 32 are integrally formed.
- the seventh side surface wiring 371 is configured such that the bonding pattern 381 for wiring between layers and the external electrode terminal 32 are conducted by a conductive metal other than Au. In this case, the seventh side surface wiring 371 can be formed by removing the Au film formed on the side surface 303 on the ⁇ X direction side of the second sealing member 30.
- an Au film is previously formed on the side surface 303 of the second sealing member 30 on the ⁇ X direction side, and this Au film is used as the Au film 381c of the bonding pattern 381 for inter-layer wiring and the Au of the external electrode terminal 32. It is integrally formed with the film 32c. Then, by removing the Au film on the side surface 303 on the ⁇ X direction side of the second sealing member 30 by, for example, metal etching, the seventh side surface wiring 371 containing no Au film is formed. In this way, the seventh side surface wiring 371 from which the Au film has been removed is formed on the side surface 303 on the ⁇ X direction side of the second sealing member 30. The removal of the Au film is performed on the second sealing member 30 in the state of the wafer, and is performed before the second sealing member 30 is bonded to the crystal diaphragm 10.
- the entire Au film on the side surface 303 on the ⁇ X direction side of the second sealing member 30 may be removed, or the side surface 303 on the ⁇ X direction side of the second sealing member 30 may be removed. A part of the Au film may be removed.
- the 7th side surface wiring 371 is configured to be conductive by a conductive metal other than Au, so that it is resistant to soldering. It is erosive.
- solder when the crystal oscillator 100 is mounted on an external circuit board, solder is generally used, and the solder is interposed between the external electrode terminal 32 of the second sealing member 30 and the external circuit board. Will be done.
- the solder contains Sn (tin)
- the 7th side surface wiring 371 has an Au film
- the solder may wet and spread in the 7th side surface wiring 371 along the Au film. Therefore, due to the erosion action of the solder, Au constituting the Au film is aggregated, and there is a concern that problems such as an increase in conduction resistance and disconnection may occur.
- this Au film may become an erosion path of the solder.
- the Au film that can be a solder erosion path is removed, and the second sealing member 30 is formed by the first metal film 371a formed of a conductive metal other than Au.
- the bonding pattern 381 for inter-layer wiring of the first main surface 301 and the external electrode terminal 32 of the second main surface 302 are made conductive. Since the surface of the first metal film 371a is not covered with the Au film, the surface of the first metal film 371a is oxidized and does not get wet with the solder.
- the erosion-resistant structure provided in the seventh side surface wiring 371 can block the erosion path of the solder in the seventh side surface wiring 371, so that the solder in the conduction path to the first excitation electrode 111 spreads wet. Can be suppressed, and erosion of the first excitation electrode 111 due to solder can be suppressed. Further, it is possible to suppress an increase in conduction resistance due to solder erosion of the seventh side surface wiring 371 and the occurrence of disconnection or the like.
- the erosion-resistant structure provided in the eighth side surface wiring 372 can block the erosion path of the solder in the eighth side surface wiring 372, so that the solder wet spread of the conduction path to the second excitation electrode 112 can be prevented. It can be suppressed, and erosion of the second excitation electrode 112 due to solder can be suppressed. Further, it is possible to suppress an increase in conduction resistance due to solder erosion of the eighth side surface wiring 372 and the occurrence of disconnection or the like.
- the metal film on the surface of the 7th and 8th side surface wirings 371 and 372 is formed of a metal having low wettability of solder (NiTi in this case).
- the metal film on the surface of the 7th and 8th side surface wirings 371 and 372 is formed by a film containing at least Ti, and the film containing Ti having low solder wettability is exposed.
- the solder erosion path in the 7th and 8th side surface wirings 371 and 372 can be blocked, so that the solder from spreading in the conduction path to the 1st and 2nd excitation electrodes 111 and 112 can be suppressed.
- the tenth side surface wiring 374 may be directly connected to the external electrode terminal 32, and the ninth side surface wiring 373 may be electrically connected to the external electrode terminal 32 via the metal film 28.
- the ninth side surface wiring 373 is electrically connected to the metal film 28 via the seal path 116, the first internal wiring 173, the seal path 115, and the fifth side surface wiring 273, and further, the sixth side surface wiring.
- first and second internal wirings 173 and 174 may be provided.
- the first and second internal wirings 173 and 174 connected to the ground are formed on the inner wall surfaces 105 and 106 of the outer frame portion 12 of the crystal diaphragm 10, but the outer surface (for example, the side surface) of the crystal diaphragm 10 is formed.
- a side wiring connected to the ground may be provided in 103, 104).
- the first and second internal wirings 173 and 174 are formed on the inner wall surface 105 on the ⁇ X direction side and the inner wall surface 106 on the + X direction side of the outer frame portion 12 of the crystal diaphragm 10.
- Internal wiring may be formed on the inner wall surface on the ⁇ Z ′ direction side and the inner wall surface on the + Z ′ direction side of the outer frame portion 12 of 10.
- the four inner wall surfaces of the outer frame portion 12 of the crystal diaphragm 10 inner wall surface 105 on the ⁇ X direction side, inner wall surface 106 on the + X direction side, inner wall surface on the ⁇ Z ′ direction side, and inner wall surface on the + Z ′ direction side).
- Internal wiring may be formed on all of the wall surface).
- the grounding electrode is provided on the first main surface 201 on the side not facing the internal space of the first sealing member 20, but the present invention is not limited to this, and the internal space of the first sealing member 20 is not limited to this.
- a grounding electrode may be formed on the second main surface 202 on the facing side.
- the number of external electrode terminals 32 on the second main surface 302 of the second sealing member 30 is set to 4, but the number is not limited to this, and the number of external electrode terminals 32 can be set to, for example, 2. It may be one, six, eight, or the like. Further, the case where the present invention is applied to the crystal oscillator 100 has been described, but the present invention is not limited to this, and the present invention may be applied to, for example, a crystal oscillator.
- the first sealing member 20 and the second sealing member 30 are formed of a quartz plate, but the present invention is not limited to this, and the first sealing member 20 and the second sealing member 30 may be formed.
- it may be formed of glass or resin.
- the side wirings 171 and 172 of the crystal diaphragm 10 are Z'with respect to both the side wirings 271,272 of the first sealing member 20 and the side wirings 371 and 372 of the second sealing member 30.
- the side wirings 171, 172 of the crystal diaphragm 10 were not shifted in the Z'axial direction with respect to the side wirings 271,272 of the first sealing member 20, and the second sealing was performed. Only the side wirings 371 and 372 of the member 30 may be arranged so as to be offset in the Z'axis direction.
- the side wirings 271,272 of the first sealing member 20 and the side wirings 371 and 372 of the second sealing member 30 are arranged at substantially the same positions in the side view, but the first sealing member 20
- the side wirings 271,272 and the side wirings 371 and 372 of the second sealing member 30 may be arranged so as to be offset from each other in a side view.
- the side wiring 171 and 172 of the crystal vibrating plate 10, the side wiring 271,272 of the first sealing member 20, and the side wiring 371 and 372 of the second sealing member 30 are packaged in the crystal oscillator 100.
- the 371 and 372 may be formed on the Z'axial side surface (Z'axis end surface) of the package of the crystal oscillator 100.
- the side wirings 171 and 172 of the crystal diaphragm 10, the side wirings 271,272 of the first sealing member 20, and the side wirings 371 and 372 of the second sealing member 30 are connected to the crystal oscillator 100.
- the package By forming the package on the side surface in the X-axis direction (X-axis end face), it is possible to easily form stable side surface wiring in which disconnection is unlikely to occur.
- the first and second side surface wirings 171 and 172 formed on the crystal diaphragm 10 are formed on the second main surface 302 on the side not facing the internal space of the second sealing member 30. Although they are arranged at positions where they overlap with the external electrode terminals 32 and 32 in the vertical direction in the side view (see FIGS. 8 and 9), for example, as in the first modification shown in FIGS. 11 and 12. , The second side surface wirings 171a and 172a may be arranged at positions where they do not overlap with the external electrode terminals 32 and 32 in the vertical direction in the side view.
- the first side surface wiring 171a formed on the side surface 103 on the ⁇ X direction side of the crystal diaphragm 10 is in the ⁇ Z ′ direction with respect to the first side surface wiring 171 in FIG. It is arranged so as to be offset to the side. Then, in the side view, the first side surface wiring 171a is arranged in the space between the two external electrode terminals 32, 32. The first side surface wiring 171a is arranged at a position where the external electrode terminals 32 and 32 do not overlap with each other in the vertical direction in the side view.
- the second side surface wiring 172a formed on the side surface 104 on the + X direction side of the crystal diaphragm 10 is arranged so as to be offset to the + Z'direction side from the second side surface wiring 172 in FIG. ing. Then, in the side view, the second side surface wiring 172a is arranged in the space between the two external electrode terminals 32, 32. The second side surface wiring 172a is arranged at a position where the external electrode terminals 32 and 32 do not overlap with each other in the vertical direction in the side view.
- the first and second side surface wirings 171a and 172a formed on the crystal diaphragm 10 are viewed from the side with respect to the external electrode terminals 32 and 32 formed on the second sealing member 30.
- the vertical direction By not superimposing in the vertical direction, it is possible to prevent the solder protruding from the external electrode terminals 32 and 32 from coming into contact with and adhering to the first and second side surface wirings 171a and 172a.
- the above-mentioned erosion-resistant structure is an example and can be changed in various ways.
- Au at the end of the external electrode terminal 32 of the 2nd sealing member 30 in addition to removing part or all of the Au film from the 7th and 8th side wirings 371 and 372 of the 2nd sealing member 30, Au at the end of the external electrode terminal 32 of the 2nd sealing member 30.
- a part of the film 32c may be removed, or a part of the Au film 381c at the end of the interlamination wiring bonding pattern 381 of the second sealing member 30 may be removed.
- the present invention is not limited to this, and with the Au film of the 7th and 8th side surface wirings 371 and 372 of the 2nd sealing member 30 left, a metal having a low wettability of solder other than Au (for example,) on the Au film.
- a corrosion resistant structure may be formed by forming a metal film made of Ti). The surface of the Au film of the 7th and 8th side wirings 371 and 372 of the 2nd sealing member 30 is covered with a metal film made of a metal other than Au.
- the solder from wetting and spreading along the Au film of the 7th and 8th side wirings 371 and 372 of the 2nd sealing member 30, and problems such as an increase in conduction resistance and disconnection occur. Can be suppressed.
- the Au film of the 7th and 8th side surface wirings 371 and 372 of the 2nd sealing member 30 is removed as in the above embodiment to remove the solder. It is preferable to block the erosion route of the solder.
- Au of the external electrode terminal 32 of the 2nd sealing member 30 A part of the film 32c may be removed, or a part of the Au film 381c of the bonding pattern 381 for wiring between layers of the second sealing member 30 may be removed.
- the above-mentioned erosion-resistant structure is preferably provided at least on the 7th and 8th side surface wirings 371 and 372 of the 2nd sealing member 30, but the 7th and 8th side surface wirings 371 of the 2nd sealing member 30 are provided. , 372, and the third and fourth side surface wirings 271,272 of the first sealing member 20 can be provided with the same corrosion-resistant structure.
- the 3rd and 4th side surface wirings 271,272 of the 1st sealing member 20 also block the solder erosion path. Can be and is preferred.
- the metal film 28 as a grounding electrode is provided on the first main surface (main surface on the side not facing the internal space) 201 of the first sealing member 20, and the metal film 28 is formed on the metal film 28.
- the crystal oscillator 100 according to the second modification also has the same effect as that of the above embodiment.
- the crystal oscillator 100 according to the second modification will be described, but the differences from the above embodiment will be mainly described.
- the crystal oscillator 100 includes a crystal diaphragm (piezoelectric diaphragm) 10, a first sealing member 20, and a second sealing member 30.
- the crystal diaphragm 10 and the first sealing member 20 are joined to each other, and the crystal diaphragm 10 and the second sealing member 30 are joined to form a package having a substantially rectangular sandwich structure. It is composed. That is, in the crystal oscillator 100, the internal space (cavity) of the package is formed by joining the first sealing member 20 and the second sealing member 30 to both main surfaces of the crystal diaphragm 10.
- the vibrating portion 11 (see FIGS. 15 and 16) is hermetically sealed in this internal space.
- an AT-cut quartz plate is used as in the above embodiment.
- a metal film is provided on the first main surface 201 (main surface on the side not facing the internal space) of the first sealing member 20 unlike the above embodiment.
- the side surface of the first sealing member 20 is not provided with side wiring.
- the first sealing member 20 is not provided with a through hole.
- a metal film 29 for shielding (for ground connection) is formed on the second main surface 202 (main surface on the side facing the internal space) of the first sealing member 20.
- the metal film 29 is integrally formed with the annular sealing member-side first joining pattern 24 for joining to the quartz diaphragm 10.
- a circular connection joint pattern 261 and an oval connection joint pattern 262 are formed on the second main surface 202 of the first sealing member 20.
- the metal film 29 and the first joining pattern 24 on the sealing member side are provided in substantially the entire region except the region where the connecting joining patterns 261,262 are provided. ing.
- the crystal diaphragm 10 has a vibrating portion 11 formed in a substantially rectangular shape, an outer frame portion 12 surrounding the outer periphery of the vibrating portion 11, and a vibrating portion, as in the above embodiment. It has a holding portion 13 for holding the vibrating portion 11 by connecting the 11 and the outer frame portion 12. A cutout portion 10a formed by cutting out the crystal diaphragm 10 is provided between the vibrating portion 11 and the outer frame portion 12. In the present embodiment, the crystal diaphragm 10 is provided with only one holding portion 13 for connecting the vibrating portion 11 and the outer frame portion 12, so that the cutout portion 10a surrounds the outer circumference of the vibrating portion 11. It is formed continuously.
- first excitation electrode 111 is provided on the first main surface 101 side of the vibrating portion 11, and the second excitation electrode 112 is provided on the second main surface 102 side of the vibrating portion 11.
- Extract wiring (first extraction wiring 113, second extraction wiring 114) for connecting these excitation electrodes to the external electrode terminals is connected to the first excitation electrode 111 and the second excitation electrode 112.
- the first lead-out wiring 113 is drawn out from the first excitation electrode 111 and is connected to the oval connection connection pattern 12a formed on the outer frame portion 12 via the holding portion 13.
- the second lead-out wiring 114 is drawn out from the second excitation electrode 112 and is connected to the connection joint pattern 13a formed in the holding portion 13.
- the first main surface 101 of the crystal vibrating plate 10 is formed with the first joining pattern 121 on the diaphragm side, and the second joining pattern 122 on the diaphragm side of the second main surface 102 of the crystal vibrating plate 10 is formed.
- the diaphragm-side first joint pattern 121 and the diaphragm-side second joint pattern 122 are provided on the outer frame portion 12, and are formed in an annular shape in a plan view.
- a circular connection pattern 12b is formed on the first main surface 101.
- the connecting joint patterns 12a and 12b are provided on the inner peripheral side of the first joining pattern 121 on the diaphragm side.
- An oval connection joint pattern 12c and a circular connection connection pattern 12d are formed on the second main surface 102.
- connection bonding pattern 12c is not connected to the connection bonding pattern 13a drawn from the second excitation electrode 112, and is provided at a predetermined distance from the connection bonding pattern 13a.
- the side surface of the crystal diaphragm 10 is not provided with side wiring.
- the crystal diaphragm 10 is formed with one first through hole 162 penetrating between the first main surface 101 and the second main surface 102.
- the first through hole 162 is an outer frame portion 12, and is provided on the inner peripheral side of the first joining pattern 121 on the diaphragm side and the second joining pattern 122 on the diaphragm side.
- the connection pattern 12a described above is formed on the first main surface 101 side
- the connection pattern 12c described above is formed on the second main surface 102 side.
- through electrodes for conducting conduction of the electrodes formed on the first main surface 101 and the second main surface 102 are formed along the inner wall surface of the first through hole 162. ..
- two internal wirings are formed on the inner wall surface of the outer frame portion 12 of the crystal diaphragm 10 as in the above embodiment.
- the first internal wiring 173 is formed on the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12 of the crystal diaphragm 10.
- the second internal wiring 174 is formed on the inner wall surface 106 on the + X direction side of the outer frame portion 12 of the crystal diaphragm 10.
- the first internal wiring 173 is provided in the central portion of the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12 with a predetermined width.
- the first internal wiring 173 is provided along the Z'axis direction.
- the first internal wiring 173 is connected to the diaphragm-side first joining pattern 121 provided on the first main surface 101 of the crystal diaphragm 10.
- the first internal wiring 173 is connected to the diaphragm-side second joint pattern 122 provided on the second main surface 102 of the crystal diaphragm 10.
- the first internal wiring 173 may be provided in the entire area of the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12.
- the first internal wiring 173 may be continuously provided on the inner wall surface 105 on the ⁇ X direction side of the outer frame portion 12 and the inner wall surface in the Z axis direction. In this case, the first internal wiring 173 may be continuously provided on only one of the inner wall surface on the + Z direction side or the inner wall surface on the ⁇ Z direction side of the outer frame portion 12, or the outer frame portion 12 may be provided continuously in the + Z direction. It may be continuously provided on both the inner wall surface on the side and the inner wall surface on the ⁇ Z direction side.
- the second internal wiring 174 is provided in the central portion of the inner wall surface 106 on the + X direction side of the outer frame portion 12 with a predetermined width.
- the second internal wiring 174 is provided along the Z'axis direction.
- the second internal wiring 174 is connected to the diaphragm-side first joining pattern 121 provided on the first main surface 101 of the crystal diaphragm 10.
- the second internal wiring 174 is connected to the diaphragm-side second joint pattern 122 provided on the second main surface 102 of the crystal diaphragm 10.
- the first internal wiring 173 and the second internal wiring 174 are arranged so as to face each other with the vibrating portion 11 interposed therebetween.
- the second internal wiring 174 may be provided in the entire area of the inner wall surface 106 on the + X direction side of the outer frame portion 12. Further, the second internal wiring 174 may be continuously provided on the inner wall surface 106 on the + X direction side of the outer frame portion 12 and the inner wall surface in the Z axis direction. In this case, the second internal wiring 174 may be continuously provided only on one of the inner wall surface on the + Z direction side or the inner wall surface on the ⁇ Z direction side of the outer frame portion 12, or the outer frame portion 12 may be provided continuously in the + Z direction. It may be continuously provided on both the inner wall surface on the side and the inner wall surface on the ⁇ Z direction side.
- the first internal wiring 173 and the second internal wiring 174 are integrally provided. You may. Further, the first internal wiring 173 and the second internal wiring 174 may be provided over the entire circumference of the inner wall surface of the outer frame portion 12.
- a second joining pattern 31 on the sealing member side for joining to the quartz diaphragm 10 is formed on the first main surface 301 of the second sealing member 30.
- the second joining pattern 31 on the sealing member side is formed in an annular shape in a plan view.
- the first main surface 301 is formed with an oval connection pattern 32a, a circular connection pattern 32b, and a connection pattern 32c integrally provided with the connection pattern 32b. ..
- the connection pattern 32c extends along the Z'axis direction.
- the connecting joint patterns 32a to 32c are provided on the inner peripheral side of the second joining pattern 31 on the sealing member side.
- the second main surface 302 of the second sealing member 30 is provided with four external electrode terminals 32 that are electrically connected to an external circuit board provided outside the crystal oscillator 100.
- the external electrode terminals 32 are located at the four corners (corners) of the second main surface 302 of the second sealing member 30.
- the external electrode terminals 32 are provided along the internal space of the package of the crystal oscillator 100 in a plan view, and are formed in a substantially L shape.
- the external electrode terminal 32 is provided at a position overlapping the outer frame portion 12 of the quartz diaphragm 10 described above in a plan view.
- the side surface of the second sealing member 30 is not provided with side wiring.
- the second sealing member 30 is formed with four second to fifth through holes 362 to 365 penetrating between the first main surface 301 and the second main surface 302.
- the second and third through holes 362 and 363 are provided on the inner peripheral side of the second joining pattern 31 on the sealing member side.
- a connection pattern 32a is formed around the second through hole 362 on the first main surface 301 side, and an external electrode terminal 32 is formed on the second main surface 302 side.
- a connection pattern 32b is formed on the first main surface 301 side and an external electrode terminal 32 is formed on the second main surface 302 side around the third through hole 363.
- a second bonding pattern 31 on the sealing member side is formed on the first main surface 301 side, and an external electrode terminal 32 is formed on the second main surface 302 side.
- through electrodes for conducting conduction of the electrodes formed on the first main surface 301 and the second main surface 302 are provided in the second to fifth through holes 362 to 365. It is formed along the inner wall surface of.
- the crystal vibrating plate 10 and the first sealing member 20 have a first joining pattern on the diaphragm side. 121 and the first joining pattern 24 on the sealing member side are overlapped and diffusion-bonded, and the crystal diaphragm 10 and the second sealing member 30 are joined together with the second joining pattern 122 on the diaphragm side and the second joining on the sealing member side.
- the patterns 31 are diffusively joined in a superposed state to produce a package having a sandwich structure shown in FIG. As a result, the internal space of the package, that is, the accommodation space of the vibrating portion 11 is hermetically sealed.
- the sealing portions (seal paths) 115 and 116 that airtightly seal the vibrating portion 11 of the quartz diaphragm 10 are formed in an annular shape in a plan view.
- the seal path 115 is formed by diffusion bonding (Au-Au bonding) of the diaphragm-side first bonding pattern 121 and the sealing member-side first bonding pattern 24 described above.
- the outer edge shape of the seal path 115 is formed in a substantially rectangular shape, and the outer peripheral edge of the seal path 115 is arranged close to the outer peripheral edge of the package.
- the seal path 116 is formed by diffusion bonding (Au-Au bonding) of the diaphragm-side second bonding pattern 122 and the sealing member-side second bonding pattern 31 described above.
- the outer edge shape of the seal path 116 is formed in a substantially rectangular shape, and the outer peripheral edge of the seal path 116 is arranged close to the outer peripheral edge of the package.
- connection patterns for connection are also diffusion-bonded in a superposed state. Then, by joining the connection patterns to each other, the crystal oscillator 100 can obtain electrical conduction between the first excitation electrode 111, the second excitation electrode 112, and the external electrode terminal 32. Specifically, the first excitation electrode 111 is connected to the external electrode terminal 32 via the first lead wiring 113, the first through hole 162, and the second through hole 362 in this order. The second excitation electrode 112 is connected to the external electrode terminal 32 via the second lead-out wiring 114, the connection pattern 32c, and the third through hole 363 in this order.
- the metal film 29 is provided integrally with the seal path 115, and the metal film 29 has the first and second internal wirings 173 and 174, the seal path 116, and the fourth and fifth through holes 364 and 365. It is connected to the ground (ground connection, using a part of the external electrode terminal 32) via the order.
- the electrical conduction path between the first and second excitation electrodes 111 and 112 and the external electrode terminals 32 and 32 is not electrically connected to the annular seal paths 115 and 116. It has become. Further, unlike the above embodiment, the electrical conduction path between the first and second excitation electrodes 111 and 112 and the external electrode terminals 32 and 32 is configured without using the side wiring. ing. Further, unlike the above embodiment, the electrical conduction path between the first and second excitation electrodes 111 and 112 and the external electrode terminals 32 and 32 is the first main surface of the first sealing member 20. The main surface on the side not facing the internal space) 201 does not pass through.
- a metal film 29 as a grounding electrode is provided on the second main surface (main surface on the side facing the internal space) 202 of the first sealing member 20.
- the metal film 29 is the second main surface of the second sealing member 30 via the first and second internal wirings 173 and 174 formed on the inner wall surfaces 105 and 106 of the outer frame portion 12 of the crystal diaphragm 10. (Main surface on the side not facing the internal space) It is electrically connected to the external electrode terminal 32 formed in 302.
- the metal film 29 as a grounding electrode is provided on the second main surface 202 of the first sealing member 20, and the inner wall surfaces 105 and 106 of the outer frame portion 12 of the crystal diaphragm 10 are connected to the ground. Since the internal wirings 173 and 174 are provided, it is less likely to be affected by the external environment, and the ground connection can be stably performed.
- first and second internal wirings 173 and 174 are provided along the Z'axis direction, the anisotropy of the AT-cut quartz plate is caused when the quartz diaphragm 10 is processed by wet etching. Therefore, it is possible to prevent the first and second internal wirings 173 and 174 from being disconnected.
- Crystal diaphragm (piezoelectric diaphragm) 10a Cutout part 11 Vibration part 12 Outer frame part 13 Holding part 20 First sealing member 28 Metal film (earth electrode) 30 Second sealing member 32 External electrode terminal 100 Crystal oscillator (piezoelectric vibration device) 105, 106 Inner wall surface 111 1st excitation electrode 112 2nd excitation electrode 173 1st internal wiring 174 2nd internal wiring 201 1st main surface (main surface on the side not facing the internal space) 202 Second main surface (main surface on the side facing the internal space) 302 Second main surface (main surface on the side not facing the internal space)
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Vibration Prevention Devices (AREA)
Abstract
Description
10a 切り抜き部
11 振動部
12 外枠部
13 保持部
20 第1封止部材
28 金属膜(アース用電極)
30 第2封止部材
32 外部電極端子
100 水晶振動子(圧電振動デバイス)
105,106 内壁面
111 第1励振電極
112 第2励振電極
173 第1内部配線
174 第2内部配線
201 第1主面(内部空間に面していない側の主面)
202 第2主面(内部空間に面している側の主面)
302 第2主面(内部空間に面していない側の主面)
Claims (9)
- 基板の一主面に第1励振電極が形成され、前記基板の他主面に前記第1励振電極と対になる第2励振電極が形成された圧電振動板と、
前記圧電振動板の前記第1励振電極を覆う第1封止部材と、
前記圧電振動板の前記第2励振電極を覆う第2封止部材と、が設けられ、
前記第1封止部材と前記圧電振動板とが接合され、かつ前記第2封止部材と前記圧電振動板とが接合されることによって、前記第1励振電極と前記第2励振電極とを含む前記圧電振動板の振動部が気密封止された内部空間が設けられた圧電振動デバイスにおいて、
前記圧電振動板は、前記振動部と、当該振動部の外周を取り囲む外枠部と、前記振動部と前記外枠部とを連結する保持部とを備え、前記振動部と前記外枠部との間には、当該圧電振動板を切り抜いて形成された切り抜き部が設けられた構成になっており、
前記第1封止部材の主面に形成されたアース用電極が、前記圧電振動板の前記外枠部の内壁面に形成された内部配線を経由して、前記第2封止部材の前記内部空間に面していない側の主面に形成された外部電極端子に電気的に接続されていることを特徴とする圧電振動デバイス。 - 請求項1に記載の圧電振動デバイスにおいて、
前記第1封止部材と前記圧電振動板との間、および前記第2封止部材と前記圧電振動板との間には、前記圧電振動板の振動部を気密封止する環状の封止部がそれぞれ設けられ、
前記各封止部が、前記内部配線に電気的に接続されていることを特徴とする圧電振動デバイス。 - 請求項1または2に記載の圧電振動デバイスにおいて、
前記内部配線が、前記外枠部の前記内壁面に沿って延びるように形成されていることを特徴とする圧電振動デバイス。 - 請求項3に記載の圧電振動デバイスにおいて、
前記内部配線が、前記外枠部の平面視で対向する一対の内壁面にそれぞれ設けられていることを特徴とする圧電振動デバイス。 - 請求項3または4に記載の圧電振動デバイスにおいて、
前記内部配線が延びる方向において、前記内部配線の幅が、前記第1、第2励振電極の幅よりも大きくなっていることを特徴とする圧電振動デバイス。 - 請求項1~5のいずれか1つに記載の圧電振動デバイスにおいて、
前記アース用電極が、前記第1封止部材の前記内部空間に面していない側の主面に形成されており、前記アース用電極が、前記第1封止部材の外側面に形成された外部配線に電気的に接続されており、
前記第2封止部材の前記外部電極端子が、前記第2封止部材の外側面に形成された外部配線に電気的に接続されていることを特徴とする圧電振動デバイス。 - 請求項1~6のいずれか1つに記載の圧電振動デバイスにおいて、
前記圧電振動板の外側面には、前記第1、第2励振電極のうち一方の励振電極に電気的に接続される外部配線が設けられており、当該外部配線と前記一方の励振電極との間に、前記内部配線が配置されていることを特徴とする圧電振動デバイス。 - 請求項1~5のいずれか1つに記載の圧電振動デバイスにおいて、
前記アース用電極が、前記第1封止部材の前記内部空間に面している側の主面に形成されており、前記アース用電極が、前記圧電振動板の前記外枠部の内壁面に形成された前記内部配線に電気的に接続されていることを特徴とする圧電振動デバイス。 - 請求項1~8のいずれか1つに記載の圧電振動デバイスにおいて、
前記圧電振動板が、ATカット水晶板であって、
前記内部配線が、ATカットのZ´軸方向に沿って設けられていることを特徴とする圧電振動デバイス。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP21906575.2A EP4266359A1 (en) | 2020-12-16 | 2021-12-13 | Piezoelectric vibration device |
US18/265,690 US20240039505A1 (en) | 2020-12-16 | 2021-12-13 | Piezoelectric resonator device |
JP2022569986A JPWO2022131213A1 (ja) | 2020-12-16 | 2021-12-13 | |
CN202180084573.5A CN116648781A (zh) | 2020-12-16 | 2021-12-13 | 压电振动器件 |
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JP2010093674A (ja) * | 2008-10-10 | 2010-04-22 | Epson Toyocom Corp | 圧電デバイス及び圧電基板の製造方法 |
JP2010109528A (ja) * | 2008-10-29 | 2010-05-13 | Epson Toyocom Corp | 圧電振動片、および圧電デバイス |
JP2010252051A (ja) | 2009-04-15 | 2010-11-04 | Seiko Epson Corp | 圧電デバイス及びその製造方法 |
JP2018133789A (ja) * | 2017-02-17 | 2018-08-23 | リバーエレテック株式会社 | ウェハレベルパッケージの製造方法 |
JP2020088589A (ja) * | 2018-11-26 | 2020-06-04 | 株式会社大真空 | 圧電振動デバイス |
JP2020162069A (ja) * | 2019-03-28 | 2020-10-01 | 株式会社大真空 | 水晶ウエハ |
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JP2010093674A (ja) * | 2008-10-10 | 2010-04-22 | Epson Toyocom Corp | 圧電デバイス及び圧電基板の製造方法 |
JP2010109528A (ja) * | 2008-10-29 | 2010-05-13 | Epson Toyocom Corp | 圧電振動片、および圧電デバイス |
JP2010252051A (ja) | 2009-04-15 | 2010-11-04 | Seiko Epson Corp | 圧電デバイス及びその製造方法 |
JP2018133789A (ja) * | 2017-02-17 | 2018-08-23 | リバーエレテック株式会社 | ウェハレベルパッケージの製造方法 |
JP2020088589A (ja) * | 2018-11-26 | 2020-06-04 | 株式会社大真空 | 圧電振動デバイス |
JP2020162069A (ja) * | 2019-03-28 | 2020-10-01 | 株式会社大真空 | 水晶ウエハ |
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