JP2022125097A - 圧電振動デバイス - Google Patents
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- 238000007789 sealing Methods 0.000 claims abstract description 160
- 239000013078 crystal Substances 0.000 claims abstract description 95
- 239000002184 metal Substances 0.000 claims abstract description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 229910000679 solder Inorganic materials 0.000 claims abstract description 53
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 230000005284 excitation Effects 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 230000003628 erosive effect Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 7
- 238000003892 spreading Methods 0.000 abstract description 13
- 238000009736 wetting Methods 0.000 abstract description 12
- 238000005260 corrosion Methods 0.000 abstract description 10
- 230000035515 penetration Effects 0.000 abstract description 8
- 239000010931 gold Substances 0.000 description 78
- 230000000149 penetrating effect Effects 0.000 description 22
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 238000007740 vapor deposition Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
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- H—ELECTRICITY
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- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
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- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15173—Fan-out arrangement of the internal vias in a single layer of the multilayer substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
Abstract
Description
11 振動部
20 第1封止部材
30 第2封止部材
32 外部電極端子
33 第6スルーホール(貫通孔)
100 水晶発振器(圧電振動デバイス)
110 外部回路基板
111 第1励振電極
112 第2励振電極
120 半田
301 第1主面(一主面)
302 第2主面(他主面)
331 貫通電極
Claims (9)
- 基板の一主面に第1励振電極が形成され、前記基板の他主面に前記第1励振電極と対になる第2励振電極が形成された圧電振動板と、
前記圧電振動板の前記第1励振電極を覆う第1封止部材と、
前記圧電振動板の前記第2励振電極を覆う第2封止部材と、が設けられ、
前記第1封止部材と前記圧電振動板とが接合され、かつ前記第2封止部材と前記圧電振動板とが接合されることによって、前記第1励振電極と前記第2励振電極とを含む前記圧電振動板の振動部を気密封止した内部空間が設けられた圧電振動デバイスにおいて、
前記第2封止部材の他主面には、半田を介して外部回路基板に電気的に接続される外部電極端子が形成され、
前記第2封止部材には、貫通孔が形成され、当該貫通孔の内壁面には、一主面に形成された電極と、他主面に形成された前記外部電極端子とを導通するための貫通電極が形成され、当該貫通電極には、前記半田に対する耐侵食構造が設けられ、
前記貫通電極は、Au以外の導電性金属によって、前記一主面の前記電極と、前記他主面の前記外部電極端子とが導通される構成になっており、
前記第1封止部材と前記圧電振動板との間、および前記圧電振動板と前記第2封止部材との間には、前記内部空間を気密封止する環状のシールパスが形成されており、
前記貫通孔は、前記環状のシールパスよりも平面視で外周側に設けられていることを特徴とする圧電振動デバイス。 - 請求項1に記載の圧電振動デバイスにおいて、
前記第1封止部材には、第1封止部材用貫通孔が形成され、当該第1封止部材用貫通孔の内壁面には、前記圧電振動板に面しない側の一主面に形成された電極と、他主面に形成された電極とを導通するための貫通電極が形成され、
前記圧電振動板には、圧電振動板用貫通孔が形成され、当該圧電振動板用貫通孔の内壁面には、一主面に形成された電極と、他主面に形成された電極とを導通するための貫通電極が形成され、
前記第2封止部材の貫通電極は、前記圧電振動板の貫通電極、前記第1封止部材の貫通電極、および前記第1封止部材の前記一主面に形成された前記電極を介して、平面視で前記環状のシールパスの内方に位置する部材に電気的に接続されていることを特徴とする圧電振動デバイス。 - 請求項1または2に記載の圧電振動デバイスにおいて、
前記第2封止部材の貫通電極は、前記貫通孔の内壁面に形成された前記導電性金属からなる金属膜、および当該金属膜の内壁面に形成されたAu膜のうち、前記Au膜の一部または全部が除去されることによって形成されていることを特徴とする圧電振動デバイス。 - 請求項3に記載の圧電振動デバイスにおいて、
前記第2封止部材の貫通電極の前記外部電極端子側の部分に形成された前記Au膜が少なくとも除去されていることを特徴とする圧電振動デバイス。 - 請求項4に記載の圧電振動デバイスにおいて、
前記Au膜は、前記第2封止部材の貫通電極の前記外部電極端子側の端部から当該貫通電極の深さ方向の中央位置までの部分が少なくとも除去されていることを特徴とする圧電振動デバイス。 - 請求項4または5に記載の圧電振動デバイスにおいて、
前記外部電極端子は、前記第2封止部材の貫通電極の前記金属膜に接続される外部金属膜および当該外部金属膜上に形成された外部Au膜を有しており、当該外部Au膜のうち、前記貫通孔の前記外部電極端子側の周縁部に形成された外部Au膜が除去される構成になっていることを特徴とする圧電振動デバイス。 - 請求項1~6のいずれか1つに記載の圧電振動デバイスにおいて、
前記第1封止部材用貫通孔が、樹脂によって塞がれていることを特徴とする圧電振動デバイス。 - 請求項7に記載の圧電振動デバイスにおいて、
前記第1封止部材が、ATカット水晶振動板であり、
前記第1封止部材用貫通孔が、平面視で、Z’軸方向に延びる長孔形状に形成されており、
前記樹脂が、平面視で、Z’軸方向に延びる略長円形状、またはZ’軸方向を長軸方向とする略楕円状に形成されていることを特徴とする圧電振動デバイス。 - 請求項7または8に記載の圧電振動デバイスにおいて、
前記樹脂が、前記第1封止部材の一主面および他主面から突出しない状態で前記第1封止部材用貫通孔内に収容されていることを特徴とする圧電振動デバイス。
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JP2018244559 | 2018-12-27 | ||
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JP2020563180A JP7188454B2 (ja) | 2018-12-27 | 2019-12-19 | 圧電振動デバイス |
PCT/JP2019/049915 WO2020137830A1 (ja) | 2018-12-27 | 2019-12-19 | 圧電振動デバイス |
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JP3841304B2 (ja) * | 2004-02-17 | 2006-11-01 | セイコーエプソン株式会社 | 圧電発振器、及びその製造方法 |
JP2007318350A (ja) * | 2006-05-24 | 2007-12-06 | Epson Toyocom Corp | 圧電振動片及びその製造方法 |
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JP2013093797A (ja) * | 2011-10-27 | 2013-05-16 | Daishinku Corp | 水晶振動デバイス |
JP2013098209A (ja) * | 2011-10-28 | 2013-05-20 | Seiko Epson Corp | 回路基板、電子デバイス、電子機器、及び回路基板の製造方法 |
JP2013162295A (ja) * | 2012-02-03 | 2013-08-19 | Seiko Epson Corp | ベース基板、電子デバイス、ベース基板の製造方法、及び電子デバイスの製造方法 |
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WO2017209296A1 (ja) * | 2016-06-03 | 2017-12-07 | 大日本印刷株式会社 | 貫通電極基板及びその製造方法、並びに実装基板 |
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CN113228256A (zh) | 2021-08-06 |
US20220077841A1 (en) | 2022-03-10 |
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