WO2022124263A1 - チップ抵抗器 - Google Patents

チップ抵抗器 Download PDF

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Publication number
WO2022124263A1
WO2022124263A1 PCT/JP2021/044708 JP2021044708W WO2022124263A1 WO 2022124263 A1 WO2022124263 A1 WO 2022124263A1 JP 2021044708 W JP2021044708 W JP 2021044708W WO 2022124263 A1 WO2022124263 A1 WO 2022124263A1
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WIPO (PCT)
Prior art keywords
protective film
silicone rubber
resistor
less
rubber particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/044708
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English (en)
French (fr)
Japanese (ja)
Inventor
孝志 大林
純子 小野崎
浩克 伊藤
恭佑 磯野
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Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Intellectual Property Management Co Ltd
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Publication date
Application filed by Panasonic Intellectual Property Management Co Ltd filed Critical Panasonic Intellectual Property Management Co Ltd
Priority to CN202180077378.XA priority Critical patent/CN116508117A/zh
Priority to US18/255,989 priority patent/US20240161948A1/en
Priority to JP2022568265A priority patent/JP7653672B2/ja
Publication of WO2022124263A1 publication Critical patent/WO2022124263A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • C09D163/04—Epoxynovolacs
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/65—Additives macromolecular
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/66—Additives characterised by particle size
    • C09D7/69—Particle size larger than 1000 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Definitions

  • the present disclosure generally relates to a chip resistor, and more particularly to a chip resistor having a resistor and a protective film.
  • Patent Document 1 describes a resin composition containing (A) a naphthylene ether type epoxy resin, (B) an amine-based curing agent, and (C) an inorganic filler containing at least (c1) talc. Further, Patent Document 1 describes that the content of the component (c1) is 15 to 40 parts by mass with respect to 100 parts by mass in total of the component (A), the component (B) and the component (C). There is. Further, Patent Document 1 describes a coating agent for a protective film of a chip resistor containing the resin composition, a protective film of a chip resistor which is a cured product of the resin composition, and a chip resistor including the protective film. Have been described.
  • the base film on which the protective film is formed and the protective film are less likely to peel off, and that moisture is less likely to enter between the protective film and the base film.
  • the chip resistor according to one aspect of the present disclosure includes a resistor and a protective film that covers the resistor.
  • the protective film is a cured product of a coating agent containing a polyfunctional epoxy resin, a curing agent, an inorganic filler, and silicone rubber particles.
  • the coating agent contains silica as the inorganic filler in the range of 60% by weight or more and 90% by weight or less, and the silicone rubber particles in the range of 1% by weight or more and 15% by weight or less.
  • FIG. 1 is a cross-sectional view showing a chip resistor according to the present embodiment.
  • FIG. 2 is an explanatory diagram showing a protective film of the chip resistor according to the present embodiment.
  • 3A to 3C are explanatory views showing a manufacturing process of a chip resistor according to the present embodiment.
  • 4A to 4H are explanatory views showing a manufacturing process of the chip resistor according to the present embodiment.
  • the protective film provided on the chip resistor is required to have high heat resistance, and even if the heat cycle is stricter than before at -55 ° C / 175 ° C, cracks and chips do not occur. Heat resistance is required.
  • a resin composition containing a polyfunctional epoxy resin such as a novolak type epoxy resin is used.
  • the protective film which is a cured product of the resin composition containing the polyfunctional epoxy resin, has higher heat resistance.
  • a protective film has a large curing shrinkage and is inferior in adhesion to the substrate. For this reason, peeling of the protective film and the substrate may occur, and moisture may enter between the protective film and the substrate (interface) in a moisture resistance load test or the like. If moisture enters between the protective film and the substrate, the resistance value of the chip resistor may change.
  • the protective film covering the resistor is formed of a cured product of a coating agent containing a polyfunctional epoxy resin, a curing agent, an inorganic filler, and silicone rubber particles.
  • the coating agent contains silica as an inorganic filler in the range of 60% by weight or more and 90% by weight or less. Further, the coating agent contains silicone rubber particles in the range of 1% by weight or more and 15% by weight or less.
  • the protective film of such a chip resistor contains a cured product of a polyfunctional epoxy resin, it has high heat resistance.
  • the stress generated by the curing shrinkage of the polyfunctional epoxy resin is relaxed by the silica and the silicone rubber particles, the adhesion to the base on which the protective film is formed is less likely to decrease, and the protective film and the base are less likely to peel off.
  • the silica is preferably particles having an average particle diameter in the range of 1 ⁇ m or more and 10 ⁇ m or less. Further, the silicone rubber particles preferably have an average particle diameter in the range of 2 ⁇ m or more and 15 ⁇ m or less, and have a rubber hardness of 10 or more and 35 or less by a durometer.
  • the polyfunctional epoxy resin preferably contains a tetrafunctional hydroxyphenyl type epoxy resin.
  • the protective film has higher flexibility than the case where it contains other polyfunctional epoxy resins, and the protective film is less likely to be cracked or chipped in the thermal cycle test.
  • FIG. 1 shows a chip resistor 10 according to the present embodiment.
  • the chip resistor 10 is a chip resistor for surface mounting (SMT) mounted on the surface (mounting surface) of a printed circuit board using, for example, a surface mounter (mounter). Further, the chip resistor 10 is, for example, a thick film chip resistor.
  • the chip resistor 10 includes a resistor 2 and a protective film 5. Further, the chip resistor 10 further includes an insulating substrate 1, a pair of front surface electrodes 3, a base protective film 4, a pair of end face electrodes 6, a pair of plating layers 7, and a pair of back surface electrodes 8. ing.
  • the insulating substrate 1 is, for example, an alumina substrate containing 96% to 99% of Al 2 O 3 (alumina).
  • the shape of the insulating substrate 1 in a plan view is, for example, a rectangular shape such as a rectangle.
  • the resistor 2 has an electrical resistance, is a thick film, and is provided on one surface (upper surface of FIG. 1) of the insulating substrate 1.
  • the resistor 2 is, for example, a resistor 2 composed of RuO 2 , AgPd, CuNi, etc., which is located substantially in the center of the insulating substrate 1 in a plan view, and the shape in a plan view is, for example, a rectangle such as a rectangle. The shape.
  • Each of the pair of surface electrodes 3 is made of, for example, an Ag-based cermet thick film electrode.
  • the pair of surface electrodes 3 are electrically connected to the resistor 2 at both ends in the longitudinal direction (left-right direction in FIG. 1) of the resistor 2.
  • One end of each surface electrode 3 is located below the resistor 2, and the other end is located at the right or left end of the insulating substrate 1.
  • the base protective film (pre-coated glass) 4 is a film for protecting the resistor 2.
  • the base protective film 4 is a film that serves as a base for the protective film 5. That is, the protective film 5 is formed above the underlying protective film 4, and the underlying protective film 4 is provided between the protective film 5 and the resistor 2.
  • the base protective film 4 is formed of an inorganic material, for example, a glass material such as crystal glass or quartz glass, or an inorganic material containing Al 2 O 3 (alumina).
  • the base protective film 4 is located on the upper surface of the resistor 2. Further, the base protective film 4 covers a part of the pair of surface electrodes 3 at both ends in the longitudinal direction (left-right direction in FIG. 1).
  • the substrate protective film 4 covers the boundary between the resistor 2 and the pair of surface electrodes 3 when viewed from the film thickness direction of the resistor 2 (thickness direction of the insulating substrate 1), and the resistor 2 to the pair of surface electrodes. It covers at least a part of 3 continuously.
  • the base protective film 4 may be a metal oxide other than alumina or a metal nitride.
  • the protective film 5 is a film for protecting the resistor 2.
  • the protective film 5 is formed of a cured product of a coating agent containing an epoxy resin.
  • the protective film 5 covers the entire surface of the underlying protective film 4 and a part of the pair of surface electrodes 3. That is, the protective film 5 covers the boundary between the base protective film 4 and the pair of surface electrodes 3 when viewed from the film thickness direction of the resistor 2, and is continuous from the base protective film 4 to at least a part of the pair of surface electrodes 3. Covers the target. Therefore, the protective film 5 covers the resistor 2.
  • the shape of the protective film 5 in a plan view is, for example, a rectangular shape such as a rectangle.
  • the portions located between both ends of the base protective film 4 in the longitudinal direction (left-right direction in FIG. 1) and the plating layer 7 are directly covered with the protective film 5.
  • FIG. 2 is an explanatory diagram of the protective film 5.
  • the protective film 5 has a resin portion 50, silica particles 51, and silicone rubber particles 52.
  • the resin portion 50 is a cured product of the resin, and a plurality of silica particles 51 and a plurality of silicone rubber particles 52 are dispersed in the film-shaped resin portion 50. Since the protective film 5 contains a plurality of silica particles 51 and a plurality of silicone rubber particles 52, the stress generated in the protective film 5 due to heat or the like is relaxed as compared with the case where the resin layer 50 is formed alone. Can be done.
  • the protective film 5 contains a plurality of silica particles 51, the difference in linear expansion coefficient from the adjacent inorganic underlying protective film 4 is smaller than when the resin layer 50 is formed alone. Therefore, the thermal expansion and contraction of the protective film 5 easily follows the thermal expansion and contraction of the underlying protective film 4, and even if the protective film 5 and the underlying protective film 4 are adhered or adhered to each other, stress is less likely to occur in the protective film 5. Further, since the protective film 5 contains a plurality of silica particles 51, the stress generated in the protective film 5 is more likely to be absorbed by the elastic deformation of the plurality of silicone rubber particles 52 as compared with the case where the resin layer 50 is formed alone. Become. Therefore, the stress generated in the protective film 5 can be relaxed.
  • Each of the pair of end face electrodes 6 is made of, for example, Ag.
  • the pair of end face electrodes 6 are located at both ends of the insulating substrate 1 in the longitudinal direction (left-right direction in FIG. 1).
  • the pair of end face electrodes 6 are electrically connected to the pair of surface electrodes 3.
  • Each of the pair of plating layers 7 includes a Ni plating layer 71 and a Sn plating layer 72, as shown in FIG.
  • Each of the pair of plating layers 7 is connected to a part of the corresponding surface electrode 3 of the pair of surface electrodes 3 and is in contact with the protective film 5. Further, each of the pair of plating layers 7 covers the corresponding end face electrode 6 of the pair of end face electrodes 6.
  • Each of the pair of back surface electrodes 8 is made of, for example, an Ag-based cermet thick film electrode.
  • the pair of back surface electrodes 8 are located at both ends of the back surface (lower surface of FIG. 1) of the insulating substrate 1 in the longitudinal direction (left-right direction of FIG. 1).
  • the pair of back surface electrodes 8 has a one-to-one correspondence with the pair of front surface electrodes 3.
  • the pair of back surface electrodes 8 may be omitted.
  • the thickness of the resistor 2 is preferably in the range of 5 ⁇ m or more and 15 ⁇ m or less, and the thickness of the substrate protective film 4 is preferably in the range of 4 ⁇ m or more and 20 ⁇ m or less.
  • the thickness of the protective film 5 is preferably in the range of 20 ⁇ m or more and 40 ⁇ m or less.
  • a sheet-shaped insulating substrate 111 is used as shown in FIG. 3A.
  • the sheet-shaped insulating substrate 111 is formed in a substantially rectangular shape in a plan view, and is formed of the same material as the insulating substrate 1 and having the same thickness.
  • the sheet-shaped insulating substrate 111 is formed larger than the insulating substrate 1 and has a size that allows a plurality of insulating substrates 1 to be taken.
  • a plurality of chip regions 12 having the same size as the insulating substrate 1 are formed on the sheet-shaped insulating substrate 111.
  • Each chip region 12 corresponds to one insulating substrate 1. That is, one chip resistor 10 is manufactured by forming the resistor 2 and the protective film 5 in each chip region 12.
  • the plurality of chip regions 12 are provided on the sheet-shaped insulating substrate 111 side by side in the vertical direction and the horizontal direction.
  • the sheet-shaped insulating substrate 111 is divided into strip-shaped insulating substrates 11 in which a plurality of chip regions 12 are connected in the vertical direction, as shown in FIG. 3B, after the protective film 5 is formed.
  • the strip-shaped insulating substrate 11 is divided in the lateral direction after the end face electrode 6 is formed as described later, and the insulating substrate 1 having one chip region 12 is formed as shown in FIG. 3C.
  • backside electrodes (not shown in FIGS. 3A to 4C and FIGS. 4A to 4H) are formed on the back surface of each chip region 12 of the sheet-shaped insulating substrate 111.
  • the surface electrode 3 is formed on the surface of each chip region 12 of the sheet-shaped insulating substrate 111 (see FIG. 4A).
  • a conductive paste of Ag-based cermet can be used for the front electrode 3 and the back electrode.
  • the front surface electrode 3 and the back surface electrode are formed by, for example, printing (applying) a conductive paste on both ends of the front surface and the back surface of the chip region 12 in the longitudinal direction by screen printing and then sintering the paste.
  • the front electrode 3 and the back electrode are formed by forming a metal film on both ends of the front surface and the back surface of the chip region 12 in the longitudinal direction by sputtering, and then removing unnecessary portions of the film by photolithography and etching. May be good.
  • a resistor 2 is formed on the surface of each chip region 12 of the sheet-shaped insulating substrate 111 (see FIG. 4B).
  • the resistor 2 is formed, for example, by printing (applying) a resistor paste containing RuO 2 on the surface of the chip region 12 by screen printing and then firing the paste.
  • a base protective film 4 that covers the surface of the resistor 2 is formed (see FIG. 4C).
  • the base protective film 4 is formed by, for example, printing (coating) a glass coating agent on each chip region 12 by screen printing and then firing the coating agent.
  • trimming is performed (see FIG. 4D). Trimming is performed to adjust the resistance value of the chip resistor 10. Trimming is performed by removing a part of the resistor 2 and the base protective film 4 of each chip region 12 to form the trimming portion 20.
  • a protective film 5 that covers the surface of the underlying protective film 4 is formed (see FIG. 4E).
  • the protective film 5 is formed by printing (applying) a coating agent described later on the chip region 12 by screen printing and then curing the protective film 5 by heating or the like.
  • a display portion is formed on the surface of the protective film 5.
  • the character "102" is formed as a display unit.
  • the display unit shows the resistance value, product number, type, etc. of the chip resistor 10.
  • the display portion is formed, for example, by printing ink on the surface of the protective film 5 with a stamp or the like and then curing the ink with heat, ultraviolet rays, or the like.
  • the sheet-shaped insulating substrate 111 is divided into elongated strips (primary division) to form the strip-shaped insulating substrate 11 as shown in FIG. 3B.
  • the divided position of the sheet-shaped insulating substrate 111 is shown by a alternate long and short dash line in FIG. 3A.
  • the sheet-shaped insulating substrate 111 is divided at the positions of both ends in the longitudinal direction of the chip region 12. As a result, the plurality of chip regions 12 are lined up along the longitudinal direction of the strip-shaped insulating substrate 11. Further, the surface electrodes 3 formed in each chip region 12 are arranged along the longitudinal direction of the strip-shaped insulating substrate 11.
  • the end face electrode 6 is formed in each chip region 12 (see FIG. 4F).
  • the end face electrode 6 is formed at the end portion of the strip-shaped insulating substrate 11 in the longitudinal direction.
  • the end face electrode 6 is formed by, for example, printing (applying) a conductive paste or the like and curing it. Further, the end face electrode 6 may be formed by, for example, sputtering.
  • the strip-shaped insulating substrate 11 is divided into individual pieces in each chip region 12 (secondary division) to form the insulating substrate 1 as shown in FIG. 3C.
  • the Ni plating layer 71 and the Sn plating layer 72 constituting the plating layer 7 are sequentially formed (see FIGS. 4G and 4H). In this way, the chip resistor 10 is formed.
  • the chip resistor 10 is shipped after being inspected for completion and taping.
  • Coating agent The coating agent according to the present embodiment is used to form the protective film 5.
  • the coating agent contains a polyfunctional epoxy resin, a curing agent, an inorganic filler, and silicone rubber particles.
  • the polyfunctional epoxy resin is cured by a curing agent to form the resin portion 50 of the protective film 5.
  • the polyfunctional epoxy resin is an epoxy resin having a plurality of epoxy groups in one molecule.
  • the polyfunctional epoxy resin has a higher crosslink density due to curing than the monofunctional epoxy resin. Therefore, as compared with the case of using a monofunctional epoxy resin, the glass transition point of the resin portion 50 of the protective film 5 becomes higher, and the heat resistance of the protective film 5 can be improved.
  • the structural formula (1) is a tetrafunctional hydroxyphenyl type epoxy resin.
  • the structural formula (2) is a cresol novolac type epoxy resin.
  • the structural formula (3) is a dicyclopentadiene type epoxy resin.
  • the structural formula (4) is an arylene type epoxy resin.
  • the structural formula (5) is a naphthalene diol type epoxy resin.
  • the structural formula (6) is a triphenol methane type epoxy resin. Note that n is an arbitrary integer.
  • the tetrafunctional hydroxyphenyl type epoxy resin represented by the structural formula (1) is preferable.
  • the hydroxyphenyl type epoxy resin a cured product having higher flexibility can be obtained as compared with other polyfunctional epoxy resins. Therefore, in the thermal cycle test, cracks and chips are less likely to occur in the protective film.
  • the curing agent is a curing agent for a polyfunctional epoxy resin. That is, the polyfunctional epoxy resin is cured by the curing agent to form the resin portion 50.
  • the curing agent at least one of an imidazole-based curing agent, a phenol novolac type curing agent and a dicyandiamide curing agent can be used.
  • the imidazole-based curing agent those represented by the following structural formula (7) can be used.
  • the phenol novolac type curing agent those represented by the following structural formula (8) can be used.
  • the dicyandiamide curing agent those represented by the following structural formula (9) can be used. Note that n is an arbitrary integer.
  • the inorganic filler is used to reduce the coefficient of linear expansion of the protective film 5. That is, the protective film 5 containing the inorganic filler has a smaller coefficient of linear expansion than the cured resin product not containing the inorganic filler. Therefore, the protective film 5 in the present embodiment can approach the linear expansion coefficient of the underlying protective film 4 formed of glass or the like, and reduce the difference in the linear expansion coefficient between the protective film 5 and the underlying protective film 4. Can be done. Therefore, the difference in dimensional change due to thermal expansion and contraction between the protective film 5 and the underlying protective film 4 becomes small, the protective film 5 is less likely to crack, and the protective film 5 and the underlying protective film 4 are less likely to be peeled off.
  • the inorganic filler preferably contains silica. Since the protective film 5 contains silica, the coefficient of linear expansion tends to decrease. Silica is contained in the protective film 5 as particles.
  • the average particle size of the silica particles is preferably in the range of 1 ⁇ m or more and 10 ⁇ m or less. If the average particle size of the silica particles is larger than this range, the film thickness of the protective film 5 must be increased, and cracks and peeling are likely to occur. If the average particle size of the silica particles is smaller than this range, the viscosity of the coating agent tends to increase, and the printability of the coating agent when forming the protective film 5 may decrease. It is more preferable that the average particle size of the silica particles is in the range of 1 ⁇ m or more and 5 ⁇ m or less.
  • Silica may be used by mixing a plurality of types of particles having different average particle diameters. Further, as the average particle diameter of the silica particles, the median diameter (D50) obtained from the particle size distribution measured by the light scattering method can be adopted.
  • (D) Silicone rubber particles The silicone rubber particles are elastically deformed in the protective film 5 to absorb the stress applied to the protective film 5. Therefore, the protective film 5 containing the silicone rubber particles is superior in stress relaxation property as compared with the cured resin product containing no silicone rubber particles. Therefore, even if stress is generated in the protective film 5 and the underlying protective film 4 due to dimensional changes due to thermal expansion and contraction, the protective film 5 is less likely to crack, and the protective film 5 and the underlying protective film 4 are less likely to be peeled off.
  • silicone rubber particles examples include silicone rubber particles having a structure in which linear dimethylpolysiloxane is crosslinked. Further, in order to improve the dispersibility of the silicone rubber particles in the resin, the surface of the silicone rubber particles may be coated with a silicone resin.
  • the average particle size of the silicone rubber particles is preferably in the range of 2 ⁇ m or more and 15 ⁇ m or less. If the average particle size of the silicone rubber particles is larger than this range, the film thickness of the protective film 5 must be increased, and cracks and peeling are likely to occur. If the average particle size of the silicone rubber particles is smaller than this range, the viscosity of the coating agent tends to increase, and the printability of the coating agent when forming the protective film 5 may deteriorate. It is more preferable that the average particle size of the silicone rubber particles is in the range of 3 ⁇ m or more and 8 ⁇ m or less. The average particle size of the silicone rubber particles is also measured in the same manner as for the silica particles.
  • the silicone rubber particles preferably have a rubber hardness of 10 or more and 35 or less according to the durometer A. If the rubber hardness of the silicone rubber particles is larger than this range, the effect of stress reduction by the silicone rubber particles is reduced, and if the rubber hardness of the silicone rubber particles is smaller than this range, the silicone rubber particles tend to aggregate and are contained in the coating agent. The dispersibility in is low.
  • the rubber hardness of the silicone rubber particles is more preferably in the range of 10 or more and 20 or less. In the case of silicone rubber particles coated with silicone resin, the rubber hardness is preferably 10 or more and 30 or less. Further, although some rubber particles use acrylic rubber or the like, there are no acrylic rubber particles having a rubber hardness of 35 or less, and it is preferable to use silicone rubber particles from the viewpoint of rubber hardness.
  • the coating agent may contain a pigment such as carbon and a solvent for adjusting the viscosity, if necessary.
  • the coating agent contains silica as an inorganic filler in the range of 60% by weight or more and 90% by weight or less with respect to the solid content (the balance obtained by removing the solvent from the coating agent) in the coating agent.
  • Silicone rubber particles are contained in the range of 1% by weight or more and 15% by weight or less. Since the protective film 5 which is a cured product of the coating agent is formed of the solid content of the coating agent, it contains silica in the range of 60% by weight or more and 90% by weight or less in the same manner as described above, and is a silicone rubber particle. Is contained in the range of 1% by weight or more and 15% by weight or less.
  • the blending amount of silica is less than 60% by weight, the effect of stress relaxation on the protective film 5 may be reduced, and if it exceeds 90% by weight, the viscosity of the coating agent may become too high and the printability may be impaired.
  • the blending amount of silica is more preferably in the range of 60% by weight or more and 75% by weight or less with respect to the solid content in the coating agent.
  • the blending amount of the silicone rubber particles is less than 1% by weight, the effect of stress reduction by the silicone rubber particles is small, and if it exceeds 15% by weight, the silicone rubber particles tend to aggregate and the dispersibility in the coating agent is low. As a result, the printability of the coating agent may deteriorate. From the viewpoint of stress relaxation and printability, the blending amount of the silicone rubber particles is more preferably in the range of 2% by weight or more and 8% by weight or less with respect to the solid content in the coating agent.
  • the blending amount of the components other than silica and the silicone rubber particles can be appropriately set in consideration of the properties of the protective film 5 and the ease of preparation.
  • Examples 1 to 3, Comparative Examples 1 and 2 The chip resistors shown in FIG. 1 were made according to the steps shown in FIGS. 3A to 3C and 4A to 4H.
  • As the coating agent those having the formulations shown in Table 1 were used.
  • the insulating substrate was an alumina substrate having a linear expansion coefficient of 7 ppm and an elastic modulus of 360 GPa.
  • the base protective film is a crystal glass having a linear expansion coefficient of 7 ppm and an elastic modulus of 59 GPa, and is formed of a glass material composed of 20% silicon dioxide, 30% lead oxide, and the balance of a solvent or the like.
  • the linear expansion coefficient ( ⁇ 2) of the protective film 5 in Example 1 was 40 ppm, the linear expansion coefficient ( ⁇ 1) was 10 ppm, and the elastic modulus was 18 GPa.
  • silica particles those having an average particle diameter of 3 ⁇ m were used.
  • silicone rubber particles those having an average particle diameter of 3 ⁇ m and a rubber hardness of 15 were used.
  • the chip resistors of Examples 1 to 3 and Comparative Examples 1 and 2 were subjected to a thermal cycle test and a moisture resistance load test.
  • the thermal cycle test the atmospheric temperature around the chip resistor was repeatedly changed for 1000 cycles between a low temperature of ⁇ 55 ° C. and a high temperature of 175 ° C., and then the properties of the protective film 5 were observed.
  • the moisture-resistant load test the atmosphere around the chip resistor was maintained at 60 ° C. and 95% for 1000 hours while applying a voltage of 100 V to the chip resistor, and the change in resistance value during that period was measured.
  • the chip resistor (10) includes a resistor (2) and a protective film (5) that covers the resistor (2).
  • the protective film (5) is a cured product of a coating agent containing a polyfunctional epoxy resin, a curing agent, an inorganic filler, and silicone rubber particles (52).
  • the coating agent contains silica as the inorganic filler in the range of 60% by weight or more and 90% by weight or less, and the silicone rubber particles in the range of 1% by weight or more and 15% by weight or less.
  • the performance of stress relaxation of the protective film (5) is improved by silica and the silicone rubber particles (52), peeling between the protective film (5) and the substrate is unlikely to occur, and the protective film (5) and the substrate are not easily separated.
  • the second aspect is the chip resistor (10) according to the first aspect, and the silica is particles (51) having an average particle diameter in the range of 1 ⁇ m or more and 10 ⁇ m or less. Further, the silicone rubber particles (52) have an average particle diameter in the range of 2 ⁇ m or more and 15 ⁇ m or less, and a rubber hardness by a durometer in the range of 10 or more and 35 or less.
  • the stress relaxation performance of the protective film (5) is further improved by the silica particles (51) and the silicone rubber particles (52), and the protective film (5) and the base are less likely to be separated from each other. There is an advantage that it is difficult for water to enter between (5) and the substrate.
  • the third aspect is the chip resistor (10) according to the first or second aspect, and the polyfunctional epoxy resin contains a tetrafunctional hydroxyphenyl type epoxy resin.
  • the flexibility of the protective film (5) is improved, the stress relaxation performance of the protective film (5) is further improved, the peeling between the protective film (5) and the substrate is less likely to occur, and the protective film (5) There is an advantage that it is difficult for water to enter between 5) and the substrate.
  • Chip resistor 2 Resistor 5 Protective film 51 Silica particles 52 Silicone rubber particles

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Details Of Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
PCT/JP2021/044708 2020-12-07 2021-12-06 チップ抵抗器 Ceased WO2022124263A1 (ja)

Priority Applications (3)

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CN202180077378.XA CN116508117A (zh) 2020-12-07 2021-12-06 片式电阻器
US18/255,989 US20240161948A1 (en) 2020-12-07 2021-12-06 Chip resistor
JP2022568265A JP7653672B2 (ja) 2020-12-07 2021-12-06 チップ抵抗器

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JPH083451A (ja) * 1994-06-16 1996-01-09 Tatsumori:Kk シリカとシリコーンゴムを含む組成物及びその製造法
JP2009091424A (ja) * 2007-10-05 2009-04-30 Namics Corp 保護膜層用封止剤
JP2011089072A (ja) * 2009-10-26 2011-05-06 Namics Corp チップ抵抗器または圧電発音体の保護膜用樹脂組成物
JP2019077810A (ja) * 2017-10-25 2019-05-23 ペルノックス株式会社 絶縁組成物、チップ抵抗器、表示体の製造方法、及びチップ抵抗器の製造方法

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JPS62270617A (ja) * 1986-05-20 1987-11-25 Mitsui Toatsu Chem Inc 半導体封止用樹脂組成物
JPS62273222A (ja) * 1986-05-21 1987-11-27 Mitsui Toatsu Chem Inc 半導体封止用樹脂組成物
JPH082885B2 (ja) * 1987-09-14 1996-01-17 東都化成株式会社 新規エポキシ化合物
JPH0697324A (ja) * 1992-09-11 1994-04-08 Mitsui Toatsu Chem Inc 樹脂封止型半導体装置
JPH06295801A (ja) * 1993-02-10 1994-10-21 Rohm Co Ltd チップ抵抗器及びその製造方法
JPH10144508A (ja) * 1996-11-07 1998-05-29 Rohm Co Ltd チップ抵抗器におけるレーザトリミング方法
JPH10189832A (ja) * 1996-12-20 1998-07-21 Nitto Denko Corp エポキシ樹脂組成物およびそれを用いた半導体装置
JPH10289802A (ja) * 1997-04-16 1998-10-27 Matsushita Electric Ind Co Ltd 抵抗器
US6740411B2 (en) * 2001-02-21 2004-05-25 Ngk Spark Plug Co. Ltd. Embedding resin, wiring substrate using same and process for producing wiring substrate using same
JP2004010877A (ja) * 2002-06-12 2004-01-15 Nippon Kayaku Co Ltd 結晶性エポキシ樹脂、及びその製法
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Publication number Priority date Publication date Assignee Title
JPH083451A (ja) * 1994-06-16 1996-01-09 Tatsumori:Kk シリカとシリコーンゴムを含む組成物及びその製造法
JP2009091424A (ja) * 2007-10-05 2009-04-30 Namics Corp 保護膜層用封止剤
JP2011089072A (ja) * 2009-10-26 2011-05-06 Namics Corp チップ抵抗器または圧電発音体の保護膜用樹脂組成物
JP2019077810A (ja) * 2017-10-25 2019-05-23 ペルノックス株式会社 絶縁組成物、チップ抵抗器、表示体の製造方法、及びチップ抵抗器の製造方法

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CN116508117A (zh) 2023-07-28
US20240161948A1 (en) 2024-05-16

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