WO2022104906A1

WO2022104906A1 - Micro-displacement mechanism with non-hermitian coupling angle detection and correction device

Info

Publication number: WO2022104906A1
Application number: PCT/CN2020/133054
Authority: WO
Inventors: 黄海阳; 赵瑛璇; 仇超; 盛振; 甘甫烷
Original assignee: 中国科学院上海微系统与信息技术研究所
Priority date: 2020-11-17
Filing date: 2020-12-01
Publication date: 2022-05-27
Also published as: CN112240748B; CN112240748A

Abstract

The present invention relates to a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device. A substrate is fixed on the upper surface of a rigid bottom plate, an insulating layer is fixed on the substrate, two identical silicon wire groups are arranged on the insulating layer, the silicon wire groups comprise a plurality of silicon wires that are parallel to each other and have the same shape and size, and the distances between adjacent silicon wires are equal; the silicon wires are perpendicular to the front and rear sides of the rigid bottom plate; a scattering light source is arranged on the lower surface of a rigid top plate; when a laser emitted by the scattering light source is irradiated on the silicon wire groups, a near-field coupling effect occurs between the silicon wires and the substrate, and one silicon wire in the silicon wire groups is completely inhibited. The present invention can simultaneously detect and correct the displacement error of the rigid top plate of a parallelogram flexible hinge mechanism along the x-axis direction under the action of F force and the parasitic rotation angle error of the rigid top plate around the y-axis.

Description

A micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device

technical field

The invention relates to the technical field of micro-nano photonic devices and micro-displacement measurement, in particular to a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device.

Background technique

The parallelogram flexible hinge mechanism is a very widely used micro-displacement mechanism. Due to unavoidable manufacturing errors, deviations in the direction of the displacement force and the position of the action point, etc., the parallelogram flexible hinge mechanism is prone to parasitic displacement errors. A typical parallelogram flexible hinge mechanism is shown in Figure 1: in the figure 01 is a rigid upper plate, 02 is a flexible hinge, 03 is a rigid vertical plate, and 04 is a rigid bottom plate; rigid upper plate 01,

rigid bottom plate

04, 2 rigid plates The vertical plate 03 and the four flexible hinges form a parallelogram flexible hinge mechanism, wherein the rigid upper plate 01 and the rigid bottom plate 04 are congruent and parallel to each other, the left and right two rigid vertical plates 03 are congruent and parallel to each other, and the four flexible hinges are all congruent and parallel to each other. Wait. A fixed rectangular coordinate system o-x-y-z is established with the geometric center of the rigid upper plate 01 as the origin, where the x-axis is perpendicular to the left and right surfaces of the rigid upper plate 01, the y-axis is perpendicular to the upper and lower surfaces of the rigid upper plate 01, and the z-axis is perpendicular to the rigid upper plate 01. front and back. Fix the rigid bottom plate 04 (fixedly connected to the frame), when the external force F acts on the midpoint of the right side of the rigid upper plate 01 along the x-axis, the rigid upper plate 01 is displaced relative to the rigid bottom plate 04 along the x-axis direction and the y-axis direction , where the displacement in the y-axis direction is much smaller than the displacement in the x-axis direction, which is generally ignored.

Theoretically, the parallelogram flexible hinge mechanism only produces displacement along the x-axis direction under the action of the F force. In the actual manufacturing and use process, due to unavoidable manufacturing errors, deviations in the direction of the displacement force and the position of the action point, etc., The parallelogram flexible hinge mechanism is prone to parasitic displacement errors (small rotations along each coordinate axis and small movements along the y-axis and z-axis). In practical applications, the displacement accuracy of the rigid upper plate 01 of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the F force is very high. Besides, the torsional stiffness of the rigid upper plate 01 around the y-axis is small. , there are often control requirements for the parasitic angle error of the rigid upper board 01 around the y-axis (minor rotation around the y-axis).

SUMMARY OF THE INVENTION

The invention provides a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, which can simultaneously detect and correct the displacement error and rigidity of the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of F force. Parasitic corner error of the plate around the y-axis.

The technical solution adopted by the present invention to solve the technical problem is to provide a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, comprising a rigid upper plate, a rigid bottom plate and two rigid vertical plates, the rigid upper plate , A rigid bottom plate and two rigid vertical plates form a parallelogram structure through four flexible hinges, a substrate is fixed on the upper surface of the rigid bottom plate, an insulating layer is fixed on the substrate, and an insulating layer is arranged on the insulating layer. Two sets of identical silicon wire groups, the silicon wire groups include a number of silicon wires that are parallel to each other and have the same shape and size, and the distances between adjacent silicon wires are equal; the silicon wires are perpendicular to the front of the rigid bottom plate. The lower surface of the rigid upper plate is provided with a scattering light source; when the laser light emitted by the scattering light source is irradiated on the silicon wire group, a near-field coupling effect occurs between the silicon wire and the substrate, and causes the silicon wire group to have a near-field coupling effect. of a silicon wire is completely inhibited.

The distance between adjacent silicon wires in the silicon wire group is one-fifth of the wavelength of the laser light.

The thickness of the insulating layer is 15-20 nm.

The insulating layer is a transparent aluminum oxide isolation layer.

The substrate is a silver matrix in the shape of a rectangular parallelepiped.

The two ends of each silicon wire group are connected to the processor through the lead-out wire, and the processor reads the potential of each silicon wire according to the lead-out wire, and determines the corresponding minimum potential difference in the wire group according to the potential value of the silicon wire. position variation information of the silicon wire, and perform displacement compensation for the driver that pushes the rigid upper board according to the position variation information.

beneficial effect

Compared with the prior art, the present invention has the following advantages and positive effects due to the adoption of the above-mentioned technical solution: the present invention can simultaneously detect and correct the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of F force The resulting displacement error and parasitic angle error around the y-axis of the rigid upper plate.

Description of drawings

Fig. 1 is the structural representation of the micro-displacement mechanism in the prior art;

2 is a front view of an embodiment of the present invention;

Figure 3 is a top view of an embodiment of the present invention;

Fig. 4 is a sectional view along line A-A in Fig. 2;

5 is a schematic diagram of the principle of laser detection based on non-Hermitian coupling specific frequency in an embodiment of the present invention;

FIG. 6 is a schematic diagram of the principle of detecting the position of a point light source in an embodiment of the present invention.

Detailed ways

The present invention will be further described below in conjunction with specific embodiments. It should be understood that these examples are only used to illustrate the present invention and not to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope defined by the appended claims of the present application.

Embodiments of the present invention relate to a micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, as shown in Figures 2-4, 11a, 11b, 11c and 11d are flexible hinges with the same structure, 12a and 12b are Rigid risers with the same structure, 13 is the rigid bottom plate, 14 is the right driver support, 15 is the rigid upper plate, 15a is the lower surface of the rigid upper plate, 15b is the right side of the rigid upper plate, 16 is the fixed The miniature scattering light source on the lower surface 15a of the rigid upper plate, 17a and 17b are the exact same x-direction piezoelectric ceramic actuators, 18a and 18b are the exact same piezoelectric ceramic actuator locking nuts, used for locking the x-direction piezoelectric ceramics respectively

Ceramic drivers

17a and 17b; 19a, 19b, 19c and 19d are threaded holes, which are evenly distributed on the rigid upper plate 15 for external connection; 20a, 20b, 20c and 20d are threaded holes, which are evenly distributed on the rigid bottom plate 13, Used for outgoing joins. 23a and 23b are two identical sets of mutually parallel wires composed of several pairs of silicon wires, wherein each silicon wire has the same shape and size, and the distance between adjacent silicon wires is equal, and the silicon wires are perpendicular to the The front and rear of the rigid bottom plate 13 . 24 is a transparent aluminum oxide isolation layer (insulating layer) with a certain thickness, and the silicon wire group is fixed on the insulating layer 24 . 25 is a silver substrate, and the insulating layer 24 is fixed on the silver substrate 25 . When the laser light emitted by the scattering light source 16 irradiates the silicon wire group 23a and the silicon wire group 23b, a near-field coupling effect occurs between the silicon wire and the silver substrate 25, and causes the silicon wire group 23a and the silicon wire group 23b to have a near-field coupling effect. of a silicon wire is completely inhibited.

The rigid upper plate 15 is a rectangular hexahedron, and a fixed three-dimensional rectangular coordinate system o-x-y-z is set with the geometric center o of the lower surface 15a of the rigid upper plate 15 as the origin (that is, the three-dimensional rectangular coordinate system o-x-y-z is stationary relative to the rigid bottom plate 13). The right driver support 14 and the rigid bottom plate 13 are a rigid integral structure; the x-direction piezoelectric

ceramic drivers

17a and 17b are installed in the right driver support 14, and the driving force of the piezoelectric

ceramic drivers

17a and 17b acts on the rigid upper plate On the right side 15b, the direction of the acting force and the position of the acting point of the two meet the following characteristics: the direction of the force is along the negative direction of the x-axis, the distance between the acting points of the force is B and is symmetrical with the origin, and the acting points of the two forces are The y-axis coordinate values are the same; both the piezoelectric

ceramic drivers

17a and 17b can independently drive the rigid upper plate 15 to move along the negative x-axis direction.

The cross section of each wire in the wire group in this embodiment is 60*100 nm, and the distance between the two wires in each wire group is 145 nm. The wires are made of silicon material, which is buried in a silver substrate. The light source wavelength range is 700-750nm. Using conventional processing methods, on the SOI wafer, first use electron beam lithography to etch silicon nanowires, then use ALD process to deposit an aluminum oxide isolation layer (15-20nm), and then use electron beam evaporation to deposit silver lining end. When the wavelength of the light source is 727 nm and the incident angle is 50°, complete suppression is achieved.

During operation, there is often an error between the theoretical value and the actual value that the piezoelectric ceramic driver drives the rigid upper plate 15 to move. It is assumed that the piezoelectric

ceramic drivers

17a and 17b synchronously drive the rigid upper plate 15 to produce displacement along the negative direction of the x-axis. At this time, under the irradiation of the micro-scattering light source 19, the position variation of the sensitive wires in the wire group 23a is _Δa , and the wire group 23b is sensitive to If the position variation of the lead wire is Δ _b , it can be known that the actual displacement of the center of the rigid upper plate 15 along the negative direction of the x-axis

Parasitic corner error of rigid upper plate 15 around the y-axis

According to the position variation information of the sensitive wires in the wire group 23a and the wire group 23b, the piezoelectric

ceramic actuators

17a and 17b are controlled to generate an appropriate compensation displacement, which can eliminate or reduce the displacement error generated by the center of the rigid upper plate 15 along the negative direction of the x-axis and Parasitic corner error around the y-axis.

The detection principle of this embodiment is realized based on the non-Hermitian coupling specific frequency laser detection principle. In Figure 5, 1 and 2 are parallel wires made of silicon material, L1 is a laser parallel beam that is vertically shot to wire 1 and wire 2 in space, and L2 is the projection of L1 onto the plane where wire 1 and wire 2 are located. Line, θ is the incident angle (the acute angle between the laser parallel beam L1 and the normal line of the plane where the wire 1 and wire 2 are located), 7 is the transparent aluminum oxide isolation layer (insulating layer) with a certain thickness, 8 is the silver lining end. The wire 1 and the wire 2 are fixed on the transparent aluminum oxide isolation layer 7 , and the transparent aluminum oxide isolation layer 7 is fixedly connected with the silver substrate 8 . 3 and 4 are lead wires fixedly connected to both ends of lead 1 and lead 2, 5 and 6 are potentiometers, and the potential difference at both ends of lead 1 and lead 2 can be measured through lead lead 3 and lead lead 4 respectively.

When the laser irradiates a single silicon wire, the silicon wire is illuminated, and a potential difference is generated across the silicon wire. In Fig. 5, for a light beam L1 of a specific wavelength (eg, the wavelength range of the light source is 700-750 nm), if the distance between the wire 1 and the wire 2 and the thickness of the aluminum oxide isolation layer 7 are appropriate (eg, between the wire 1 and the wire 2) When the distance is one-fifth of the wavelength of light, and the thickness of the aluminum oxide isolation layer 7 is 15-20 nm), the two

parallel wires

1 and 2 and the silver substrate 8 in this case form a resonator together. Under the irradiation of the light beam L1, a near-field coupling effect will occur between the wire 1, the wire 2 and the silver substrate 8. At this time, the brightness of the wire 1 and the wire 2 and the potential difference between the two ends will change. According to the coupled mode theory, the potential difference between the two ends of wire 1 and wire 2 is related to the incident angle θ. In particular, by carefully designing the parameters, it can be achieved that at a certain incident angle θ ₀ , the resonator amplitude is completely suppressed, that is, the resonator is close to the light source. The potential difference between the two ends of the wire 1 tends to zero, while the potential difference between the two ends of the wire 2 which is far from the light source does not change significantly. The laser incident angle θ ₀ at this position is called the coupling incident angle. In order to improve the detection sensitivity, it can be judged whether the light incident angle is the coupling incident angle θ ₀ according to the ratio of the potential difference between the two ends of the wire 1 and the wire 2: then when the light incident angle is the coupling incident angle θ ₀ , the two ends of the wire 1 and the wire 2 The potential difference ratio reaches an extreme value. According to this principle, the value of θ ₀ can be accurately measured.

Based on the above principles, a point light source position detection principle is shown in Figure 6. In the figure, 1a is a wire group consisting of several pairs of silicon wires that are parallel to each other. The distance between each adjacent pair of silicon wires is certain, and 7a has a certain Thick transparent aluminum oxide isolation layer (insulation layer), 8a is a silver substrate, the size of the wire group 1a, the insulating layer 7 and the silver substrate 8a are appropriately set so that each pair of silicon wires in the wire group 1a conforms to the above-mentioned non-Hermitian coupling. The conditions for the phenomenon to occur; S is a scattered light source that can emit light of a specific frequency, θ ₀ is the coupling incident angle, and the wire A irradiated by the incident angle is the coupling incident angle θ ₀ appears dark, and the potential difference between its two ends is close to zero (called this Wire A is the sensitive wire), so the position in the wire group can be easily detected. The Cartesian coordinate system oxy is set as shown in Figure 6, where the x-axis is parallel to the upper surface of the wire group. Obviously, in the Cartesian coordinate system oxy, if point S moves Δ along the x-axis direction, then point A also moves synchronously along the x-axis direction Δ. It can be seen that, based on this principle, the micro-displacement mechanism of this embodiment can simultaneously detect and correct the displacement error of the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the F force and the displacement error of the rigid upper plate around the y-axis. parasitic corner error.

Claims

A micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device, comprising a rigid upper plate, a rigid bottom plate and two rigid upright plates, the rigid upper plate, the rigid bottom plate and the two rigid upright plates passing through four flexible hinges A parallelogram structure is formed, characterized in that a substrate is fixed on the upper surface of the rigid bottom plate, an insulating layer is fixed on the substrate, and two sets of identical silicon wire groups are arranged on the insulating layer. The silicon wire group includes a number of silicon wires that are parallel to each other and have the same shape and size, and the distance between adjacent silicon wires is equal; the silicon wires are perpendicular to the front and rear of the rigid bottom plate; the lower surface of the rigid upper plate A scattering light source is provided; when the laser light emitted by the scattering light source irradiates the silicon wire group, a near-field coupling effect occurs between the silicon wire and the substrate, and a silicon wire in the silicon wire group is completely suppressed.
The micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device according to claim 1, wherein the distance between adjacent silicon wires in the silicon wire group is five times the wavelength of the laser light one.
The micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device according to claim 1, wherein the thickness of the insulating layer is 15-20 nm.
The micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device according to claim 1, wherein the insulating layer is a transparent aluminum oxide insulating layer.
The micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device according to claim 1, wherein the substrate is a silver matrix in the shape of a rectangular parallelepiped.
The micro-displacement mechanism with a non-Hermitian coupling angle detection and correction device according to claim 1, wherein the two ends of each silicon wire group are connected to the processor through lead-out wires, and the processor according to the lead-out The wire reads the potential of each silicon wire, and judges the position variation information of the silicon wire corresponding to the minimum potential difference in the wire group according to the potential value of the silicon wire, and pushes the rigid upper board according to the position variation information. The drive performs displacement compensation.