CN213301112U

CN213301112U - Micro-displacement mechanism with non-hermite coupling angle detection and correction device

Info

Publication number: CN213301112U
Application number: CN202022656108.XU
Authority: CN
Inventors: 黄海阳; 赵瑛璇; 仇超; 盛振; 甘甫烷
Original assignee: Shanghai Institute of Microsystem and Information Technology of CAS
Current assignee: Shanghai Institute of Microsystem and Information Technology of CAS
Priority date: 2020-11-17
Filing date: 2020-11-17
Publication date: 2021-05-28
Anticipated expiration: 2030-11-17

Abstract

The utility model relates to a micro-displacement mechanism with a non-Hermite coupling angle detection and correction device, wherein a substrate is fixed on the upper surface of a rigid bottom plate, an insulating layer is fixedly arranged on the substrate, two groups of identical silicon conductor groups are arranged on the insulating layer, each silicon conductor group comprises a plurality of silicon conductors which are parallel to each other and have the same shape and size, and the distances between the adjacent silicon conductors are equal; the silicon lead is vertical to the front surface and the back surface of the rigid bottom plate; a scattering light source is arranged on the lower surface of the rigid upper plate; when laser emitted by the scattering light source irradiates the silicon lead group, a near-field coupling effect occurs between the silicon lead and the substrate, and one silicon lead in the silicon lead group is completely inhibited. The utility model discloses can synchronous detection and correct the flexible hinge mechanism of parallelogram mechanism rigidity upper plate and follow the displacement error that x axle direction produced and the parasitic corner error of rigidity upper plate around the y axle under the effect of F power.

Description

Micro-displacement mechanism with non-hermite coupling angle detection and correction device

Technical Field

The utility model relates to a receive photon device and micro displacement measurement technical field a little, especially relate to a micro displacement mechanism with device is corrected in detection of non-hermitian coupling angle.

Background

The parallelogram flexible hinge mechanism is one kind of micro displacement mechanism with wide use. Due to the manufacturing error, deviation of the displacement acting force direction and the acting point position and the like which are difficult to avoid, parasitic displacement errors are easy to generate in the parallelogram flexible hinge mechanism. A typical parallelogram flexure hinge mechanism is shown in fig. 1: in the figure, 01 is a rigid upper plate, 02 is a flexible hinge, 03 is a rigid vertical plate, and 04 is a rigid bottom plate; the rigid upper plate 01, the rigid bottom plate 04, the 2 rigid vertical plates 03 and the 4 flexible hinges form a parallelogram flexible hinge mechanism, wherein the rigid upper plate 01 and the rigid bottom plate 04 are congruent and parallel to each other, the left rigid vertical plate 03 and the right rigid vertical plate 03 are congruent and parallel to each other, and the 4 flexible hinges are congruent. A fixed rectangular coordinate system o-x-y-z is established by taking the geometric center of the rigid upper plate 01 as an origin, wherein the x axis is vertical to the left and right surfaces of the rigid upper plate 01, the y axis is vertical to the upper and lower surfaces of the rigid upper plate 01, and the z axis is vertical to the front and back surfaces of the rigid upper plate 01. When an external force F acts on the midpoint of the right side surface of the rigid upper plate 01 along the x axis, the rigid upper plate 01 displaces relative to the rigid lower plate 04 along the x axis and the y axis, wherein the displacement generated in the y axis is far smaller than that generated in the x axis, and is generally ignored.

Theoretically, the parallelogram flexible hinge mechanism only generates displacement along the x-axis direction under the action of force F, and in the actual manufacturing and using processes, parasitic displacement errors (tiny rotation along each coordinate axis and tiny movement along the y-axis and the z-axis) are easily generated by the parallelogram flexible hinge mechanism due to manufacturing errors, deviation of the direction of displacement acting force and the position of the acting point and the like which are difficult to avoid. In practical application, the requirement on the displacement accuracy of the rigid upper plate 01 of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the force F is high, and in addition, due to the fact that the torsional rigidity of the rigid upper plate 01 around the y-axis is small, the control requirement on the parasitic rotation angle error (tiny rotation around the y-axis) of the rigid upper plate 01 around the y-axis is often also met.

SUMMERY OF THE UTILITY MODEL

The utility model provides a little displacement mechanism with device is corrected in detection of non-hermite coupling angle can synchronous detection with correct the flexible hinge of parallelogram and construct the rigid upper plate and follow the displacement error that x axle direction produced and the parasitic corner error of rigid upper plate around the y axle under the F strength of force.

The utility model provides a technical scheme that its technical problem adopted is: the micro-displacement mechanism comprises a rigid upper plate, a rigid bottom plate and two rigid vertical plates, wherein the rigid upper plate, the rigid bottom plate and the two rigid vertical plates form a parallelogram structure through four flexible hinges, a substrate is fixed on the upper surface of the rigid bottom plate, an insulating layer is fixedly arranged on the substrate, two groups of identical silicon lead groups are arranged on the insulating layer, each silicon lead group comprises a plurality of silicon leads which are parallel to each other and have the same shape and size, and the distances between the adjacent silicon leads are equal; the silicon lead is vertical to the front surface and the back surface of the rigid bottom plate; a scattering light source is arranged on the lower surface of the rigid upper plate; when laser emitted by the scattering light source irradiates the silicon lead group, a near-field coupling effect occurs between the silicon lead and the substrate, and one silicon lead in the silicon lead group is completely inhibited.

And the distance between adjacent silicon wires in the silicon wire group is one fifth of the wavelength of the laser.

The thickness of the insulating layer is 15-20 nm.

The insulating layer is a transparent alumina isolation layer.

The substrate is a cuboid silver matrix.

And the processor reads the potential of each silicon wire according to the lead-out wires, judges the position variation information of the silicon wire corresponding to the minimum value of the potential difference in the wire group according to the potential value of the silicon wire, and performs displacement compensation on the driver for pushing the rigid upper plate according to the position variation information.

Advantageous effects

Since the technical scheme is used, compared with the prior art, the utility model, have following advantage and positive effect: the utility model discloses can synchronous detection and correct the flexible hinge mechanism of parallelogram mechanism rigidity upper plate and follow the displacement error that x axle direction produced and the parasitic corner error of rigidity upper plate around the y axle under the effect of F power.

Drawings

FIG. 1 is a schematic structural diagram of a micro-displacement mechanism in the prior art;

fig. 2 is a front view of an embodiment of the present invention;

fig. 3 is a top view of an embodiment of the present invention;

FIG. 4 is a cross-sectional view taken along line A-A of FIG. 2;

FIG. 5 is a schematic diagram of the detection principle of the non-Hermite coupling specific frequency laser according to the embodiment of the present invention;

fig. 6 is a schematic diagram of the principle of detecting the position of the point light source in the embodiment of the present invention.

Detailed Description

The present invention will be further described with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, it should be understood that various changes and modifications of the present invention may be made by those skilled in the art after reading the teachings of the present invention, and these equivalents also fall within the scope of the appended claims.

The embodiment of the utility model relates to a little displacement mechanism with not hermite coupling angle detection corrects device, as shown in fig. 2-4, 11a, 11b, 11c and 11d are the flexible hinge that the structure is identical, 12a and 12b are the rigid riser that the structure is identical, 13 is the rigid bottom plate, 14 is right side driver support, 15 is the rigid upper plate, 15a is the lower surface of rigid upper plate, 15b is the right side of rigid upper plate, 16 is the miniature scattered light source who fixes on rigid upper plate

lower surface

15a, 17a and 17b are the identical piezoceramics driver of x direction, 18a and 18b are the identical piezoceramics driver lock nut, be used for locking piezoceramics driver 17a of x direction and 17b respectively; 19a, 19b, 19c and 19d are threaded holes, uniformly distributed on the rigid upper plate 15 and used for connecting outwards; 20a, 20b, 20c and 20d are threaded holes, which are uniformly distributed on the rigid base plate 13 for external connection. 23a and 23b are two identical groups of parallel wires formed by pairs of silicon wires, wherein each silicon wire has the same shape and size, and the distances between adjacent silicon wires are equal, and the silicon wires are perpendicular to the front and back surfaces of the rigid bottom plate 13. A transparent alumina spacer (insulating layer) 24 having a certain thickness, and a silicon wire group is fixed on the insulating layer 24. 25 is a silver substrate, and an insulating layer 24 is fixed on the silver substrate 25. When the laser light emitted by the scattering light source 16 irradiates the silicon wire group 23a and the silicon wire group 23b, a near field coupling effect occurs between the silicon wire and the silver substrate 25, and one of the silicon wires in the silicon wire group 23a and the silicon wire group 23b is completely suppressed.

The rigid upper plate 15 is a rectangular hexahedron, and a fixed three-dimensional rectangular coordinate system o-x-y-z is set with the geometric center o of the lower surface 15a of the rigid upper plate 15 as an origin (i.e., the three-dimensional rectangular coordinate system o-x-y-z is stationary with respect to the rigid bottom plate 13). The right driver support 14 and the rigid bottom plate 13 form a rigid integral structure; the x-direction

piezoceramic drivers

17a and 17b are mounted in the right-hand driver mount 14, and the driving force of the

piezoceramic drivers

17a and 17b acts on the rigid upper plate right-hand side 15b, with the direction and position of the acting force of the two conforming to the following characteristics: the direction of the force is along the negative direction of the x axis, the distance between the action points of the force is B and is symmetrical to the original point, and the y axis coordinate values of the two action points of the force are the same;

piezoceramic actuators

17a and 17b each independently drive the rigid upper plate 15 in the negative x-axis direction.

Each wire in the wire group of the present embodiment has a cross section of 60 × 100nm, and the distance between two wires in each wire group is 145 nm. The conductive lines are made of silicon material, which is buried in a silver substrate. The light source wavelength range is 700 nm and 750 nm. On an SOI chip, a conventional processing method is adopted, electron beam lithography is firstly used for etching silicon nanowires, then an ALD process is used for depositing an aluminum oxide isolation layer (15-20nm), and then electron beam evaporation is used for depositing a silver substrate. Complete suppression is achieved when the light source wavelength is 727nm and the angle of incidence is 50 deg..

In operation, there is often an error between the theoretical value and the actual value of the movement of the rigid upper plate 15 driven by the piezoelectric ceramic driver. The piezoelectric

ceramic drivers

17a and 17b are arranged to synchronously drive the rigid upper plate 15 to generate displacement along the negative direction of the x axis, and the position variation of the sensitive lead in the lead group 23a is delta under the irradiation of the micro scattering light source 19_aThe position variation of the sensitive wire of the wire group 23b is delta_bThe actual displacement of the center of the rigid upper plate 15 along the negative x-axis direction can be known

Parasitic rotation angle error of the rigid upper plate 15 around the y-axis

According to the information of the position variation of the sensitive wires in the wire group 23a and the wire group 23b, the

piezoceramic drivers

17a and 17b are controlled to generate appropriate compensation displacement, so that the displacement error generated in the negative direction of the x axis and the parasitic rotation angle error around the y axis at the center of the rigid upper plate 15 can be eliminated or reduced.

The detection principle of the embodiment is realized based on the non-hermitian coupling specific frequency laser detection principle. In fig. 5, 1 and 2 are conductive lines made of a silicon material parallel to each other, L1 is a parallel beam of laser light spatially directed perpendicularly to the conductive lines 1 and 2, L2 is a projection line of L1 projected onto the plane of the conductive lines 1 and 2, θ is an incident angle (an acute angle sandwiched between the parallel beam of laser light L1 and a normal line of the plane of the conductive lines 1 and 2), 7 is a transparent alumina isolation layer (insulating layer) having a certain thickness, and 8 is a silver substrate. The lead 1 and the lead 2 are fixedly connected on a transparent alumina isolation layer 7, and the transparent alumina isolation layer 7 is fixedly connected with a silver substrate 8. 3 and 4 are lead-out wires fixedly connected with two ends of the wire 1 and the wire 2, 5 and 6 are potentiometers, and the potential difference between two ends of the wire 1 and the wire 2 can be respectively measured through the lead-out wires 3 and 4.

When laser irradiates a single silicon wire, the silicon wire is illuminated, and a potential difference is generated at two ends of the silicon wire. In fig. 5, for a light beam L1 with a specific wavelength (e.g., the light source wavelength range 700 and 750nm), if the distance between the conducting wire 1 and the conducting wire 2 and the thickness of the alumina isolation layer 7 are proper (e.g., the distance between the conducting wire 1 and the conducting wire 2 is one fifth of the light wavelength, and the thickness of the alumina isolation layer 7 is 15-20nm), the two conducting wires 1 and 2 in parallel and the silver substrate 8 together form a resonator, and under the irradiation of the light beam L1, the near field coupling effect occurs between the conducting wire 1, the conducting wire 2 and the silver substrate 8, and then the brightness of the conducting wire 1 and the conducting wire 2 and the potential difference between the two ends are changed. According to the coupled mode theory, the potential difference between the two ends of the conducting wire 1 and the conducting wire 2 is related to the incident angle theta, and particularly, a certain incident angle theta can be realized through elaborately designing parameters₀The amplitude of the resonator is completely inhibited, namely the potential difference between two ends of the conducting wire 1 which is closer to the light source tends to zero, while the potential difference between two ends of the conducting wire 2 which is farther from the light source does not change obviously, and the laser incidence angle theta at the position is adjusted₀Referred to as the coupling angle of incidence. In order to improve the detection sensitivity, whether the light incident angle is the coupling incident angle theta can be judged according to the ratio of the potential difference between the two ends of the conducting wire 1 and the conducting wire 2₀: when the light incident angle is the coupling incident angle theta₀When the voltage difference between the two ends of the conducting wire 1 and the conducting wire 2 reaches an extreme value. According to this principle, theta can be accurately measured₀The value of (c).

Based on the above principle, a principle of detecting the position of a point light source is shown in fig. 6, in which 1a is a parallel wire group composed of a plurality of pairs of silicon wires, the distance between each adjacent pair of silicon wires is constant, 7a is a transparent alumina isolation layer (insulation layer) having a certain thickness, 8a is a silver substrate, and the wire group 1a, the insulation layer 7 and the silver substrate are properly arranged8a, so that each pair of silicon wires in the wire group 1a meets the condition for the non-hermite coupling phenomenon; s is a diffuse light source capable of emitting light of a specific frequency, [ theta ]₀For the coupling incident angle, the coupling incident angle is₀The illuminated wire a appears dark and has a potential difference close to zero across it (this wire a is called the sensitive wire), so that the position in the wire set is easily detected. A rectangular coordinate system oxy is set as shown in fig. 6, in which the x-axis is parallel to the upper surface of the lead group, and it is obvious that in the rectangular coordinate system oxy, if the S point moves by Δ in the x-axis direction, the a point also moves by Δ in synchronization in the x-axis direction. Based on the principle, the micro-displacement mechanism of the embodiment can synchronously detect and correct displacement errors of the rigid upper plate of the parallelogram flexible hinge mechanism along the x-axis direction under the action of the force F and parasitic rotation angle errors of the rigid upper plate around the y-axis.

Claims

1. A micro-displacement mechanism with a non-Hermite coupling angle detection and correction device comprises a rigid upper plate, a rigid bottom plate and two rigid vertical plates, wherein the rigid upper plate, the rigid bottom plate and the two rigid vertical plates form a parallelogram structure through four flexible hinges; the silicon lead is vertical to the front surface and the back surface of the rigid bottom plate; a scattering light source is arranged on the lower surface of the rigid upper plate; when laser emitted by the scattering light source irradiates the silicon lead group, a near-field coupling effect occurs between the silicon lead and the substrate, and one silicon lead in the silicon lead group is completely inhibited.

2. The micro-displacement mechanism with a non-hermite coupling angle detection and correction device of claim 1, wherein the distance between adjacent silicon wires in the silicon wire set is one fifth of the wavelength of the laser light.

3. The micro-displacement mechanism with non-hermite coupling angle detection correction device of claim 1, wherein the thickness of the insulation layer is 15-20 nm.

4. The micro-displacement mechanism with a non-hermite coupling angle detection and correction device of claim 1, wherein the insulating layer is a transparent alumina isolation layer.

5. The micro-displacement mechanism with a non-hermite coupling angle detection and correction device of claim 1, wherein the substrate is a cuboid shaped silver matrix.

6. The micro-displacement mechanism with the non-hermite coupling angle detection and correction device as claimed in claim 1, wherein both ends of each silicon wire group are connected to a processor through lead-out wires, the processor reads the potential of each silicon wire according to the lead-out wires, determines the position variation information of the silicon wire corresponding to the minimum potential difference value in the wire group according to the potential value of the silicon wire, and performs displacement compensation on the driver for pushing the rigid upper plate according to the position variation information.